Продукція > MICRO COMMERCIAL CO > Всі товари виробника MICRO COMMERCIAL CO (6237) > Сторінка 53 з 104
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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| BZT52C6V2LP-TP | Micro Commercial Co |
 Description: DIODE ZENER 6.2V 100MW SOD882 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2A02-TP | Micro Commercial Co |
Description: DIODE GEN PURP 100V 2A DO15 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC123JM-TP | Micro Commercial Co |
Description: NPNDIGITALTRANSISTORSSOT-723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DTC123JM-TP | Micro Commercial Co |
Description: NPNDIGITALTRANSISTORSSOT-723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC123JCA-TP | Micro Commercial Co |
Description: NPNDIGITALTRANSISTORSSOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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DTC123JCA-TP | Micro Commercial Co |
Description: NPNDIGITALTRANSISTORSSOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BZT52B28S-TP | Micro Commercial Co | Description: DIODE ZENER 28V 200MW SOD323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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ER304-TP | Micro Commercial Co |
Description: DIODE GEN PURP 400V 3A DO201AD Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 35pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ER304-AP | Micro Commercial Co |
Description: DIODE GEN PURP 400V 3A DO201AD Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Capacitance @ Vr, F: 35pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF35-AP | Micro Commercial Co |
Description: DIODE GPP HE 3A DO-201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UFM17PL-TP | Micro Commercial Co |
Description: DIODE GEN PURP 1KV 1A SOD123FL Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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UFM17PL-TP | Micro Commercial Co |
Description: DIODE GEN PURP 1KV 1A SOD123FL Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 20pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) |
на замовлення 5132 шт: термін постачання 21-31 дні (днів) |
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R4000GPS-TP | Micro Commercial Co |
Description: DIODE GEN PURP 4KV 200MA DO41 Current - Reverse Leakage @ Vr: 5 µA @ 4000 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 4000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 200mA Technology: Standard Reverse Recovery Time (trr): 1.2 µs Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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R4000GPS-TP | Micro Commercial Co |
Description: DIODE GEN PURP 4KV 200MA DO41 Technology: Standard Reverse Recovery Time (trr): 1.2 µs Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 4000 V Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 mA Voltage - DC Reverse (Vr) (Max): 4000 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 200mA |
на замовлення 1438 шт: термін постачання 21-31 дні (днів) |
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MCQ07NP03A-TP | Micro Commercial Co |
Description: DUAL N+P-CHANNEL MOSFET,SOP-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 15V, 1497pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, 23mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.22nC @ 10V, 28.5nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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MCQ07NP03A-TP | Micro Commercial Co |
Description: DUAL N+P-CHANNEL MOSFET,SOP-8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 15V, 1497pF @ 15V Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, 23mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.22nC @ 10V, 28.5nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 1598 шт: термін постачання 21-31 дні (днів) |
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MCQD12N03A-TP | Micro Commercial Co |
Description: DUAL N-CHANNEL MOSFET,SOP-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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MCQD12N03A-TP | Micro Commercial Co |
Description: DUAL N-CHANNEL MOSFET,SOP-8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 1609 шт: термін постачання 21-31 дні (днів) |
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MCQD08N03A-TP | Micro Commercial Co |
Description: MOSFET 2N-CH 30V 8.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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MCQD08N03A-TP | Micro Commercial Co |
Description: MOSFET 2N-CH 30V 8.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8.5A Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 3674 шт: термін постачання 21-31 дні (днів) |
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S2MHE3-LTP | Micro Commercial Co |
Description: DIODE GEN PURP 1KV 2A DO214AA Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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S2MHE3-LTP | Micro Commercial Co |
Description: DIODE GEN PURP 1KV 2A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 2026 шт: термін постачання 21-31 дні (днів) |
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SL24PL-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 40V 2A SOD123FL Current - Reverse Leakage @ Vr: 500 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-123FL Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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ESD1051P4-TP | Micro Commercial Co |
Description: ESD,10V,DFN2020-3L Voltage - Breakdown (Min): 10.5V Unidirectional Channels: 1 Supplier Device Package: DFN2020-3L Voltage - Reverse Standoff (Typ): 10V (Max) Current - Peak Pulse (10/1000µs): 205A (8/20µs) Capacitance @ Frequency: 2150pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 4500W (4.5kW) Voltage - Clamping (Max) @ Ipp: 21V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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ESD1051P4-TP | Micro Commercial Co |
Description: ESD,10V,DFN2020-3L Part Status: Active Power Line Protection: No Power - Peak Pulse: 4500W (4.5kW) Voltage - Clamping (Max) @ Ipp: 21V Voltage - Breakdown (Min): 10.5V Unidirectional Channels: 1 Supplier Device Package: DFN2020-3L Voltage - Reverse Standoff (Typ): 10V (Max) Current - Peak Pulse (10/1000µs): 205A (8/20µs) Capacitance @ Frequency: 2150pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DFLZ8V2-TP | Micro Commercial Co |
Description: DIODE ZENER 8.2V 1W SOD123FL |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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DFLZ8V2-TP | Micro Commercial Co |
Description: DIODE ZENER 8.2V 1W SOD123FL |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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MBR8U60-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 60V 8A TO277 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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MBR8U60-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 60V 8A TO277 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
на замовлення 13995 шт: термін постачання 21-31 дні (днів) |
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MBR5U60SHE3-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 60V 5A TO277 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 150 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277 Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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MBR5U60SHE3-TP | Micro Commercial Co |
Description: DIODE SCHOTTKY 60V 5A TO277 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 150 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277 Current - Average Rectified (Io): 5A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCB70N10YB-TP | Micro Commercial Co |
Description: MOSFET N-CH D2-PAK Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tj) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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MCB70N10YB-TP | Micro Commercial Co |
Description: MOSFET N-CH D2-PAK Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tj) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 541 шт: термін постачання 21-31 дні (днів) |
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ESDBV5V0D5-TP | Micro Commercial Co |
Description: TVS DIODE 5VWM 13VC SOD523 Part Status: Active Power Line Protection: No Power - Peak Pulse: 52W Voltage - Clamping (Max) @ Ipp: 13V Voltage - Breakdown (Min): 5.6V Bidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 4A (8/20µs) Capacitance @ Frequency: 3pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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ESDBV5V0D5-TP | Micro Commercial Co |
Description: TVS DIODE 5VWM 13VC SOD523 Part Status: Active Power Line Protection: No Power - Peak Pulse: 52W Voltage - Clamping (Max) @ Ipp: 13V Voltage - Breakdown (Min): 5.6V Bidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 4A (8/20µs) Capacitance @ Frequency: 3pF @ 1MHz Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) Applications: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 3643 шт: термін постачання 21-31 дні (днів) |
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ESDH5V0D5-TP | Micro Commercial Co |
Description: TVS DIODE 5VWM 14VC SOD523 Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Tape & Reel (TR) Power Line Protection: No Power - Peak Pulse: 300W Voltage - Clamping (Max) @ Ipp: 14V Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 22A (8/20µs) Capacitance @ Frequency: 160pF @ 1MHz Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) |
на замовлення 136000 шт: термін постачання 21-31 дні (днів) |
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ESDH5V0D5-TP | Micro Commercial Co |
Description: TVS DIODE 5VWM 14VC SOD523 Applications: General Purpose Operating Temperature: -55°C ~ 125°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Packaging: Cut Tape (CT) Power Line Protection: No Power - Peak Pulse: 300W Voltage - Clamping (Max) @ Ipp: 14V Voltage - Breakdown (Min): 6V Unidirectional Channels: 1 Supplier Device Package: SOD-523 Voltage - Reverse Standoff (Typ): 5V (Max) Current - Peak Pulse (10/1000µs): 22A (8/20µs) Capacitance @ Frequency: 160pF @ 1MHz |
на замовлення 138482 шт: термін постачання 21-31 дні (днів) |
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MCB180N10Y-TP | Micro Commercial Co |
Description: MOSFET N-CH D2-PAK Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 357W (Tj) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 180A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
 |
SMCJ7.5A-TP | Micro Commercial Co |
Description: TVS DIODE 7.5VWM 12.9VC DO214AB Power Line Protection: No Power - Peak Pulse: 1500W (1.5kW) Voltage - Clamping (Max) @ Ipp: 12.9V Voltage - Breakdown (Min): 8.3V Unidirectional Channels: 1 Supplier Device Package: DO-214AB (SMC) Voltage - Reverse Standoff (Typ): 7.5V Current - Peak Pulse (10/1000µs): 116.3A Applications: General Purpose Operating Temperature: -55°C ~ 175°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| MURB1010CT-TP | Micro Commercial Co | Description: DIODE FAST REC 10A D2-PAK |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
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UG1JPL-TP | Micro Commercial Co |
Description: ULTRAFAST RECTIFIERS 600V 1A SOD |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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UG1JPL-TP | Micro Commercial Co |
Description: ULTRAFAST RECTIFIERS 600V 1A SOD |
на замовлення 12569 шт: термін постачання 21-31 дні (днів) |
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KTA1504-GR-TP | Micro Commercial Co |
Description: TRANS PNP 50V 0.15A SOT-23 Part Status: Obsolete Supplier Device Package: SOT-23 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KTA1504-Y-TP | Micro Commercial Co |
Description: TRANS PNP 50V 0.15A SOT-23 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Obsolete Supplier Device Package: SOT-23 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KTA1504-O-TP | Micro Commercial Co |
Description: TRANS PNP 50V 0.15A SOT-23 Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Obsolete Supplier Device Package: SOT-23 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MURSD860A-TP | Micro Commercial Co |
Description: DIODE GEN PURP 600V 8A DPAK Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DPAK Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 35pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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MURSD860A-TP | Micro Commercial Co |
Description: DIODE GEN PURP 600V 8A DPAK Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DPAK Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 35pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active |
на замовлення 4356 шт: термін постачання 21-31 дні (днів) |
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MURS820FA-BP | Micro Commercial Co |
Description: DIODE GEN PURP 200V 8A ITO220AC Mounting Type: Through Hole Package / Case: TO-220-2 Isolated Tab Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: ITO-220AC Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 65pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
на замовлення 581 шт: термін постачання 21-31 дні (днів) |
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MURS820A-BP | Micro Commercial Co |
Description: DIODE GEN PURP 200V 8A TO220AC Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 65pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF53G-TP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 5A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF53G-AP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 5A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF53-AP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 5A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SF53-TP | Micro Commercial Co |
Description: DIODE GEN PURP 150V 5A DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| KSD1616A-G-AP | Micro Commercial Co |
Description: TRANS NPN 120V 1A TO92 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ER1A-TP | Micro Commercial Co |
Description: DIODE 1A 50V HSMB DO-214AA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT52B4V3HE3-TP | Micro Commercial Co |
Description: 500MW ZENER SOD-123 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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BZT52B4V3HE3-TP | Micro Commercial Co |
Description: 500MW ZENER SOD-123 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| BZT52B4V3-TP | Micro Commercial Co |
Description: DIODE ZENER 4.3V 410MW SOD123 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||
| BZT52B4V3S-TP | Micro Commercial Co | Description: DIODE ZENER 4.3V 200MW SOD323 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX84B5V1HE3-TP | Micro Commercial Co |
Description: DIODE ZENER 5.1V 350MW SOT23 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOT-23 Grade: Automotive Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| BZT52C6V2LP-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 6.2V 100MW SOD882
Description: DIODE ZENER 6.2V 100MW SOD882
товару немає в наявності
В кошику
од. на суму грн.
| 2A02-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 100V 2A DO15
Description: DIODE GEN PURP 100V 2A DO15
товару немає в наявності
В кошику
од. на суму грн.
| DTC123JM-TP |
|
Виробник: Micro Commercial Co
Description: NPNDIGITALTRANSISTORSSOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Description: NPNDIGITALTRANSISTORSSOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| DTC123JM-TP |
|
Виробник: Micro Commercial Co
Description: NPNDIGITALTRANSISTORSSOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Description: NPNDIGITALTRANSISTORSSOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
товару немає в наявності
В кошику
од. на суму грн.
| DTC123JCA-TP |
|
Виробник: Micro Commercial Co
Description: NPNDIGITALTRANSISTORSSOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: NPNDIGITALTRANSISTORSSOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTC123JCA-TP |
|
Виробник: Micro Commercial Co
Description: NPNDIGITALTRANSISTORSSOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Description: NPNDIGITALTRANSISTORSSOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
товару немає в наявності
В кошику
од. на суму грн.
| BZT52B28S-TP |
Виробник: Micro Commercial Co
Description: DIODE ZENER 28V 200MW SOD323
Description: DIODE ZENER 28V 200MW SOD323
товару немає в наявності
В кошику
од. на суму грн.
| ER304-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 400V 3A DO201AD
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| ER304-AP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 400V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Description: DIODE GEN PURP 400V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
товару немає в наявності
В кошику
од. на суму грн.
| SF35-AP |
|
Виробник: Micro Commercial Co
Description: DIODE GPP HE 3A DO-201AD
Description: DIODE GPP HE 3A DO-201AD
товару немає в наявності
В кошику
од. на суму грн.
| UFM17PL-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A SOD123FL
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 1KV 1A SOD123FL
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 7.17 грн |
| UFM17PL-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A SOD123FL
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 1A SOD123FL
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
на замовлення 5132 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.14 грн |
| 14+ | 22.12 грн |
| 100+ | 11.19 грн |
| 500+ | 9.30 грн |
| 1000+ | 7.24 грн |
| R4000GPS-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 4KV 200MA DO41
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 4KV 200MA DO41
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| R4000GPS-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 4KV 200MA DO41
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 200mA
Description: DIODE GEN PURP 4KV 200MA DO41
Technology: Standard
Reverse Recovery Time (trr): 1.2 µs
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 500 mA
Voltage - DC Reverse (Vr) (Max): 4000 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 200mA
на замовлення 1438 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.49 грн |
| 11+ | 28.00 грн |
| 100+ | 19.48 грн |
| 500+ | 14.27 грн |
| 1000+ | 11.60 грн |
| MCQ07NP03A-TP |
|
Виробник: Micro Commercial Co
Description: DUAL N+P-CHANNEL MOSFET,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 15V, 1497pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, 23mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.22nC @ 10V, 28.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: DUAL N+P-CHANNEL MOSFET,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 15V, 1497pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, 23mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.22nC @ 10V, 28.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MCQ07NP03A-TP |
|
Виробник: Micro Commercial Co
Description: DUAL N+P-CHANNEL MOSFET,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 15V, 1497pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, 23mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.22nC @ 10V, 28.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: DUAL N+P-CHANNEL MOSFET,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 526pF @ 15V, 1497pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V, 23mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.22nC @ 10V, 28.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 1598 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.25 грн |
| 10+ | 37.89 грн |
| 100+ | 26.32 грн |
| 500+ | 19.29 грн |
| 1000+ | 15.68 грн |
| MCQD12N03A-TP |
|
Виробник: Micro Commercial Co
Description: DUAL N-CHANNEL MOSFET,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: DUAL N-CHANNEL MOSFET,SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MCQD12N03A-TP |
|
Виробник: Micro Commercial Co
Description: DUAL N-CHANNEL MOSFET,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: DUAL N-CHANNEL MOSFET,SOP-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 1609 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 44.68 грн |
| 10+ | 36.91 грн |
| 100+ | 25.65 грн |
| 500+ | 18.79 грн |
| 1000+ | 15.28 грн |
| MCQD08N03A-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET 2N-CH 30V 8.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 8.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MCQD08N03A-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET 2N-CH 30V 8.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 8.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 3674 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.14 грн |
| 13+ | 23.78 грн |
| 100+ | 14.27 грн |
| 500+ | 12.40 грн |
| 1000+ | 8.43 грн |
| 2000+ | 7.76 грн |
| S2MHE3-LTP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| S2MHE3-LTP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 2026 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 25.87 грн |
| 20+ | 15.40 грн |
| 100+ | 9.66 грн |
| 500+ | 6.72 грн |
| 1000+ | 5.97 грн |
| SL24PL-TP |
|
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 2A SOD123FL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 2A SOD123FL
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123FL
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ESD1051P4-TP |
|
Виробник: Micro Commercial Co
Description: ESD,10V,DFN2020-3L
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DFN2020-3L
Voltage - Reverse Standoff (Typ): 10V (Max)
Current - Peak Pulse (10/1000µs): 205A (8/20µs)
Capacitance @ Frequency: 2150pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 4500W (4.5kW)
Voltage - Clamping (Max) @ Ipp: 21V
Description: ESD,10V,DFN2020-3L
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DFN2020-3L
Voltage - Reverse Standoff (Typ): 10V (Max)
Current - Peak Pulse (10/1000µs): 205A (8/20µs)
Capacitance @ Frequency: 2150pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 4500W (4.5kW)
Voltage - Clamping (Max) @ Ipp: 21V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.69 грн |
| ESD1051P4-TP |
|
Виробник: Micro Commercial Co
Description: ESD,10V,DFN2020-3L
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 4500W (4.5kW)
Voltage - Clamping (Max) @ Ipp: 21V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DFN2020-3L
Voltage - Reverse Standoff (Typ): 10V (Max)
Current - Peak Pulse (10/1000µs): 205A (8/20µs)
Capacitance @ Frequency: 2150pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: ESD,10V,DFN2020-3L
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 4500W (4.5kW)
Voltage - Clamping (Max) @ Ipp: 21V
Voltage - Breakdown (Min): 10.5V
Unidirectional Channels: 1
Supplier Device Package: DFN2020-3L
Voltage - Reverse Standoff (Typ): 10V (Max)
Current - Peak Pulse (10/1000µs): 205A (8/20µs)
Capacitance @ Frequency: 2150pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.25 грн |
| 11+ | 27.78 грн |
| 100+ | 17.77 грн |
| 500+ | 12.63 грн |
| 1000+ | 11.32 грн |
| DFLZ8V2-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 8.2V 1W SOD123FL
Description: DIODE ZENER 8.2V 1W SOD123FL
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| DFLZ8V2-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 8.2V 1W SOD123FL
Description: DIODE ZENER 8.2V 1W SOD123FL
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 11+ | 28.23 грн |
| 100+ | 17.60 грн |
| 500+ | 11.31 грн |
| 1000+ | 8.70 грн |
| MBR8U60-TP |
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 60V 8A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE SCHOTTKY 60V 8A TO277
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 19.60 грн |
| 8000+ | 17.48 грн |
| MBR8U60-TP |
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 60V 8A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE SCHOTTKY 60V 8A TO277
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 13995 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.52 грн |
| 10+ | 49.06 грн |
| 100+ | 32.14 грн |
| 500+ | 23.33 грн |
| 1000+ | 21.12 грн |
| 2000+ | 19.27 грн |
| MBR5U60SHE3-TP |
|
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 60V 5A TO277
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 5A TO277
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| MBR5U60SHE3-TP |
|
Виробник: Micro Commercial Co
Description: DIODE SCHOTTKY 60V 5A TO277
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 5A TO277
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| MCB70N10YB-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH D2-PAK
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tj)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH D2-PAK
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tj)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MCB70N10YB-TP |
|
Виробник: Micro Commercial Co
Description: MOSFET N-CH D2-PAK
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tj)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH D2-PAK
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tj)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 541 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.84 грн |
| 10+ | 94.27 грн |
| 100+ | 63.86 грн |
| ESDBV5V0D5-TP |
|
Виробник: Micro Commercial Co
Description: TVS DIODE 5VWM 13VC SOD523
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 52W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5VWM 13VC SOD523
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 52W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| ESDBV5V0D5-TP |
|
Виробник: Micro Commercial Co
Description: TVS DIODE 5VWM 13VC SOD523
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 52W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Description: TVS DIODE 5VWM 13VC SOD523
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 52W
Voltage - Clamping (Max) @ Ipp: 13V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Capacitance @ Frequency: 3pF @ 1MHz
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 3643 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.92 грн |
| 13+ | 23.70 грн |
| 100+ | 14.77 грн |
| 500+ | 9.48 грн |
| 1000+ | 7.30 грн |
| 2000+ | 6.57 грн |
| ESDH5V0D5-TP |
|
Виробник: Micro Commercial Co
Description: TVS DIODE 5VWM 14VC SOD523
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Capacitance @ Frequency: 160pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Description: TVS DIODE 5VWM 14VC SOD523
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Capacitance @ Frequency: 160pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
на замовлення 136000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 3.14 грн |
| 16000+ | 2.50 грн |
| 24000+ | 2.46 грн |
| 56000+ | 2.07 грн |
| ESDH5V0D5-TP |
|
Виробник: Micro Commercial Co
Description: TVS DIODE 5VWM 14VC SOD523
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Capacitance @ Frequency: 160pF @ 1MHz
Description: TVS DIODE 5VWM 14VC SOD523
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 14V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 1
Supplier Device Package: SOD-523
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 22A (8/20µs)
Capacitance @ Frequency: 160pF @ 1MHz
на замовлення 138482 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.38 грн |
| 23+ | 13.28 грн |
| 100+ | 6.48 грн |
| 500+ | 5.07 грн |
| 1000+ | 3.52 грн |
| 2000+ | 3.06 грн |
| MCB180N10Y-TP |
Виробник: Micro Commercial Co
Description: MOSFET N-CH D2-PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH D2-PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 357W (Tj)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| SMCJ7.5A-TP |
|
Виробник: Micro Commercial Co
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 116.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 12.9V
Voltage - Breakdown (Min): 8.3V
Unidirectional Channels: 1
Supplier Device Package: DO-214AB (SMC)
Voltage - Reverse Standoff (Typ): 7.5V
Current - Peak Pulse (10/1000µs): 116.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.14 грн |
| 12+ | 26.57 грн |
| 100+ | 18.48 грн |
| 500+ | 13.54 грн |
| 1000+ | 11.01 грн |
| MURB1010CT-TP |
Виробник: Micro Commercial Co
Description: DIODE FAST REC 10A D2-PAK
Description: DIODE FAST REC 10A D2-PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| UG1JPL-TP |
|
Виробник: Micro Commercial Co
Description: ULTRAFAST RECTIFIERS 600V 1A SOD
Description: ULTRAFAST RECTIFIERS 600V 1A SOD
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 5.63 грн |
| 5000+ | 4.88 грн |
| 12500+ | 4.34 грн |
| UG1JPL-TP |
|
Виробник: Micro Commercial Co
Description: ULTRAFAST RECTIFIERS 600V 1A SOD
Description: ULTRAFAST RECTIFIERS 600V 1A SOD
на замовлення 12569 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 14+ | 21.66 грн |
| 100+ | 12.28 грн |
| 500+ | 7.63 грн |
| 1000+ | 5.85 грн |
| KTA1504-GR-TP |
|
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A SOT-23
Part Status: Obsolete
Supplier Device Package: SOT-23
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Description: TRANS PNP 50V 0.15A SOT-23
Part Status: Obsolete
Supplier Device Package: SOT-23
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
товару немає в наявності
В кошику
од. на суму грн.
| KTA1504-Y-TP |
|
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A SOT-23
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Obsolete
Supplier Device Package: SOT-23
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 50V 0.15A SOT-23
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Obsolete
Supplier Device Package: SOT-23
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| KTA1504-O-TP |
|
Виробник: Micro Commercial Co
Description: TRANS PNP 50V 0.15A SOT-23
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Obsolete
Supplier Device Package: SOT-23
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 50V 0.15A SOT-23
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Obsolete
Supplier Device Package: SOT-23
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| MURSD860A-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 8A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 8A DPAK
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 20.70 грн |
| MURSD860A-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 600V 8A DPAK
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Description: DIODE GEN PURP 600V 8A DPAK
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
на замовлення 4356 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 43.85 грн |
| 100+ | 30.30 грн |
| 500+ | 22.67 грн |
| 1000+ | 20.78 грн |
| MURS820FA-BP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 8A ITO220AC
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 200V 8A ITO220AC
Mounting Type: Through Hole
Package / Case: TO-220-2 Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: ITO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
на замовлення 581 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.11 грн |
| 50+ | 33.10 грн |
| 100+ | 26.24 грн |
| 500+ | 20.87 грн |
| MURS820A-BP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 8A TO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Description: DIODE GEN PURP 200V 8A TO220AC
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
товару немає в наявності
В кошику
од. на суму грн.
| SF53G-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 150V 5A DO201AD
Description: DIODE GEN PURP 150V 5A DO201AD
товару немає в наявності
В кошику
од. на суму грн.
| SF53G-AP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 150V 5A DO201AD
Description: DIODE GEN PURP 150V 5A DO201AD
товару немає в наявності
В кошику
од. на суму грн.
| SF53-AP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 150V 5A DO201AD
Description: DIODE GEN PURP 150V 5A DO201AD
товару немає в наявності
В кошику
од. на суму грн.
| SF53-TP |
|
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 150V 5A DO201AD
Description: DIODE GEN PURP 150V 5A DO201AD
товару немає в наявності
В кошику
од. на суму грн.
| KSD1616A-G-AP |
|
Виробник: Micro Commercial Co
Description: TRANS NPN 120V 1A TO92
Description: TRANS NPN 120V 1A TO92
товару немає в наявності
В кошику
од. на суму грн.
| ER1A-TP |
|
Виробник: Micro Commercial Co
Description: DIODE 1A 50V HSMB DO-214AA
Description: DIODE 1A 50V HSMB DO-214AA
товару немає в наявності
В кошику
од. на суму грн.
| BZT52B4V3HE3-TP |
|
Виробник: Micro Commercial Co
Description: 500MW ZENER SOD-123
Description: 500MW ZENER SOD-123
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZT52B4V3HE3-TP |
|
Виробник: Micro Commercial Co
Description: 500MW ZENER SOD-123
Description: 500MW ZENER SOD-123
товару немає в наявності
В кошику
од. на суму грн.
| BZT52B4V3-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 4.3V 410MW SOD123
Description: DIODE ZENER 4.3V 410MW SOD123
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BZT52B4V3S-TP |
Виробник: Micro Commercial Co
Description: DIODE ZENER 4.3V 200MW SOD323
Description: DIODE ZENER 4.3V 200MW SOD323
товару немає в наявності
В кошику
од. на суму грн.
| BZX84B5V1HE3-TP |
|
Виробник: Micro Commercial Co
Description: DIODE ZENER 5.1V 350MW SOT23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
Description: DIODE ZENER 5.1V 350MW SOT23
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.