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JANTX1N5536C-1/TR JANTX1N5536C-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTX1N5536D-1 JANTX1N5536D-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 16V 500MW DO204AH
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
Qualification: MIL-PRF-19500/437
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JANTX1N5536D-1/TR JANTX1N5536D-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTXV1N5536C-1 JANTXV1N5536C-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 16V 500MW DO35
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JANTXV1N5536C-1/TR JANTXV1N5536C-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTXV1N5536D-1 JANTXV1N5536D-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 16V 500MW DO35
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JANTXV1N5536D-1/TR JANTXV1N5536D-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JAN1N5536CUR-1 JAN1N5536CUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 16V 500MW DO213AA
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JAN1N5536CUR-1/TR JAN1N5536CUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTX1N5536CUR-1 JANTX1N5536CUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 16V 500MW DO213AA
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JANTX1N5536CUR-1/TR JANTX1N5536CUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JAN1N5536DUR-1 JAN1N5536DUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 16V 500MW DO213AA
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JAN1N5536DUR-1/TR JAN1N5536DUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTX1N5536DUR-1 JANTX1N5536DUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 16V 500MW DO213AA
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JANTX1N5536DUR-1/TR JANTX1N5536DUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTXV1N5536CUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 16V 500MW DO213AA
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
Qualification: MIL-PRF-19500/437
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JANTXV1N5536CUR-1/TR JANTXV1N5536CUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANTXV1N5536DUR-1 JANTXV1N5536DUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 16V 500MW DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
Qualification: MIL-PRF-19500/437
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JANTXV1N5536DUR-1/TR JANTXV1N5536DUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JANKCA1N5536B JANKCA1N5536B Microchip Technology Description: VOLTAGE REGULATOR
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1N5534B/TR 1N5534B/TR Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 101 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
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1N5533B/TR 1N5533B/TR Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
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1N5535B/TR 1N5535B/TR Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 102 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
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1N5539B/TR 1N5539B/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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1N5538B/TR 1N5538B/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
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1N5530BUR-1/TR 1N5530BUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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1N5535BUR-1/TR 1N5535BUR-1/TR Microchip Technology 8860-lds-0037-pdf.pdf Description: DIODE ZENER 15V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
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1N5538BUR-1/TR 1N5538BUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
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JAN1N5533B-1/TR JAN1N5533B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
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JAN1N5537B-1/TR JAN1N5537B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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JAN1N5535B-1/TR JAN1N5535B-1/TR Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Qualification: MIL-PRF-19500/437
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JAN1N5530B-1/TR JAN1N5530B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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JAN1N5538B-1/TR JAN1N5538B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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JAN1N5534B-1/TR JAN1N5534B-1/TR Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Qualification: MIL-PRF-19500/437
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JAN1N5539B-1/TR JAN1N5539B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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JAN1N5531B-1/TR JAN1N5531B-1/TR Microchip Technology 123956-lds-0037-1-datasheet Description: VOLTAGE REGULATOR
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2N2906AUB/TR 2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2906AUB/TR JAN2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTXV2N2906AUB/TR JANTXV2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTX2N2906AUB/TR JANTX2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANHCB2N2906A JANHCB2N2906A Microchip Technology 14809-military-qualified-die-chip Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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2N2906AUA/TR 2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2906AUA/TR JAN2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTX2N2906AUA/TR JANTX2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTXV2N2906AUA/TR JANTXV2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANKCB2N2906A JANKCB2N2906A Microchip Technology Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSR2N2906A JANSR2N2906A Microchip Technology Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSR2N2906AL JANSR2N2906AL Microchip Technology Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSR2N2906AUB/TR JANSR2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANSM2N2906AUB/TR JANSM2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANSL2N2906AUB/TR JANSL2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANSP2N2906AUB/TR JANSP2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANSD2N2906AUB/TR JANSD2N2906AUB/TR Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANSP2N2906AUA/TR JANSP2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANSM2N2906AUA/TR JANSM2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANSD2N2906AUA/TR JANSD2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANSL2N2906AUA/TR JANSL2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANSR2N2906AUA/TR JANSR2N2906AUA/TR Microchip Technology Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
В кошику  од. на суму  грн.
JANS2N2906AUBC/TR Microchip Technology Description: TRANS PNP 60V 0.6A UBC
Packaging: Tape & Reel (TR)
Package / Case: 3-CLCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товару немає в наявності
В кошику  од. на суму  грн.
JANSR2N2906AUB JANSR2N2906AUB Microchip Technology Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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В кошику  од. на суму  грн.
JANTX1N5536C-1/TR
JANTX1N5536C-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
JANTX1N5536D-1 1N5518B_1N5546B-1.pdf
JANTX1N5536D-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO204AH
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTX1N5536D-1/TR
JANTX1N5536D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
JANTXV1N5536C-1 123956-lds-0037-1-datasheet
JANTXV1N5536C-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
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В кошику  од. на суму  грн.
JANTXV1N5536C-1/TR
JANTXV1N5536C-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
JANTXV1N5536D-1 123956-lds-0037-1-datasheet
JANTXV1N5536D-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
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В кошику  од. на суму  грн.
JANTXV1N5536D-1/TR
JANTXV1N5536D-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
JAN1N5536CUR-1 8860-lds-0037-datasheet
JAN1N5536CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
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В кошику  од. на суму  грн.
JAN1N5536CUR-1/TR
JAN1N5536CUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N5536CUR-1 8860-lds-0037-datasheet
JANTX1N5536CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
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В кошику  од. на суму  грн.
JANTX1N5536CUR-1/TR
JANTX1N5536CUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
JAN1N5536DUR-1 8860-lds-0037-datasheet
JAN1N5536DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
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В кошику  од. на суму  грн.
JAN1N5536DUR-1/TR
JAN1N5536DUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
JANTX1N5536DUR-1 8860-lds-0037-datasheet
JANTX1N5536DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
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В кошику  од. на суму  грн.
JANTX1N5536DUR-1/TR
JANTX1N5536DUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товару немає в наявності
В кошику  од. на суму  грн.
JANTXV1N5536CUR-1 8860-lds-0037-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTXV1N5536CUR-1/TR
JANTXV1N5536CUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товару немає в наявності
В кошику  од. на суму  грн.
JANTXV1N5536DUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTXV1N5536DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AA
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 14.4 V
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTXV1N5536DUR-1/TR
JANTXV1N5536DUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
JANKCA1N5536B
JANKCA1N5536B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товару немає в наявності
В кошику  од. на суму  грн.
1N5534B/TR 1N5518B_1N5546B-1.pdf
1N5534B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 101 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5533B/TR 123956-lds-0037-1-datasheet
1N5533B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
товару немає в наявності
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1N5535B/TR 1N5518B_1N5546B-1.pdf
1N5535B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 102 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
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1N5539B/TR 123956-lds-0037-1-datasheet
1N5539B/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
1N5538B/TR 123956-lds-0037-1-datasheet
1N5538B/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
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1N5530BUR-1/TR
1N5530BUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
1N5535BUR-1/TR 8860-lds-0037-pdf.pdf
1N5535BUR-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
товару немає в наявності
В кошику  од. на суму  грн.
1N5538BUR-1/TR
1N5538BUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
JAN1N5533B-1/TR 123956-lds-0037-1-datasheet
JAN1N5533B-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JAN1N5537B-1/TR 123956-lds-0037-1-datasheet
JAN1N5537B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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В кошику  од. на суму  грн.
JAN1N5535B-1/TR 1N5518B_1N5546B-1.pdf
JAN1N5535B-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Qualification: MIL-PRF-19500/437
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JAN1N5530B-1/TR 123956-lds-0037-1-datasheet
JAN1N5530B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N5538B-1/TR 123956-lds-0037-1-datasheet
JAN1N5538B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N5534B-1/TR 1N5518B_1N5546B-1.pdf
JAN1N5534B-1/TR
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Qualification: MIL-PRF-19500/437
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JAN1N5539B-1/TR 123956-lds-0037-1-datasheet
JAN1N5539B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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JAN1N5531B-1/TR 123956-lds-0037-1-datasheet
JAN1N5531B-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
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2N2906AUB/TR
2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2906AUB/TR
JAN2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTXV2N2906AUB/TR
JANTXV2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTX2N2906AUB/TR
JANTX2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANHCB2N2906A 14809-military-qualified-die-chip
JANHCB2N2906A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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2N2906AUA/TR
2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JAN2N2906AUA/TR
JAN2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTX2N2906AUA/TR
JANTX2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTXV2N2906AUA/TR
JANTXV2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANKCB2N2906A
JANKCB2N2906A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Tape & Reel (TR)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSR2N2906A
JANSR2N2906A
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSR2N2906AL
JANSR2N2906AL
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSR2N2906AUB/TR
JANSR2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSM2N2906AUB/TR
JANSM2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSL2N2906AUB/TR
JANSL2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSP2N2906AUB/TR
JANSP2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSD2N2906AUB/TR
JANSD2N2906AUB/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSP2N2906AUA/TR
JANSP2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSM2N2906AUA/TR
JANSM2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSD2N2906AUA/TR
JANSD2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSL2N2906AUA/TR
JANSL2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANSR2N2906AUA/TR
JANSR2N2906AUA/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANS2N2906AUBC/TR
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UBC
Packaging: Tape & Reel (TR)
Package / Case: 3-CLCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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JANSR2N2906AUB
JANSR2N2906AUB
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
товару немає в наявності
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