Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (338308) > Сторінка 1472 з 5639
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PIC32MZ2064DAA288T-I/4J | Microchip Technology |
 Description: IC MCU 32BIT 2MB FLASH 288LFBGAPackaging: Tape & Reel (TR) Package / Case: 288-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: MIPS32® microAptiv™ Data Converters: A/D 45x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT Supplier Device Package: 288-LFBGA (15x15) Number of I/O: 120 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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PIC32MZ2064DAA288T-I/4J | Microchip Technology |
Description: IC MCU 32BIT 2MB FLASH 288LFBGA Packaging: Cut Tape (CT) Package / Case: 288-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: MIPS32® microAptiv™ Data Converters: A/D 45x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT Supplier Device Package: 288-LFBGA (15x15) Number of I/O: 120 DigiKey Programmable: Not Verified |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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PIC32MZ2025DAL176-V/2J | Microchip Technology |
Description: IC MCU 32BIT 2MB FLASH 176LQFP Packaging: Tray Package / Case: 176-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: MIPS32® microAptiv™ Data Converters: A/D 45x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT Supplier Device Package: 176-LQFP (20x20) Part Status: Active Number of I/O: 120 DigiKey Programmable: Not Verified |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
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PIC32MZ2064DAA169-I/HF | Microchip Technology |
Description: IC MCU 32BIT 2MB FLASH 169LFBGA |
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PIC32MZ2064DAB169-I/HF | Microchip Technology |
Description: IC MCU 32BIT 2MB FLASH 169LFBGA Packaging: Tray Package / Case: 169-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2MB (2M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: MIPS32® microAptiv™ Data Converters: A/D 45x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT Supplier Device Package: 169-LFBGA (11x11) Part Status: Active Number of I/O: 120 DigiKey Programmable: Not Verified |
на замовлення 154 шт: термін постачання 21-31 дні (днів) |
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JANTX1N5553US/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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JAN1N5553US/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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JAN1N5553/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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JANS1N5553US | Microchip Technology |
Description: DIODE GEN PURP 800V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
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JANTXV1N5553/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 5A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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JANTX1N5553/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 5A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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JANS1N5553/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 5A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A |
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JANTXV1N5553US/TR | Microchip Technology |
Description: DIODE GEN PURP 800V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A |
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JANS1N5553 | Microchip Technology |
Description: DIODE GEN PURP 800V 5A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A |
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JANTXV1N5553US | Microchip Technology |
Description: DIODE GEN PURP 800V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A |
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1N5553US/TR | Microchip Technology |
Description: STD RECTIFIER Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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1N5553/TR | Microchip Technology |
Description: STD RECTIFIER Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
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MSMBG100CA | Microchip Technology |
Description: TVS DIODE 100VWM 162VC SMBG |
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MASMBG100CAe3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC SMBG |
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MXLSMBG100A | Microchip Technology |
Description: TVS DIODE 100VWM 162VC SMBG |
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MASMBG100CA | Microchip Technology |
Description: TVS DIODE 100VWM 162VC SMBG |
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MSMBG100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC SMBG |
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MXLSMBG100Ae3 | Microchip Technology |
Description: TVS DIODE 100VWM 162VC SMBG |
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| PD-9512GC/AC-AU | Microchip Technology |
Description: 12-PORT BT 60W NMS AU CORD Packaging: Bulk Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Voltage - Output: 55V Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 60W Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt Current - Output: 1.1 A Number of Ports: 12 |
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MA15KP28CA | Microchip Technology |
Description: TVS DIODE 28VWM 47.5VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 316A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-204AR Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 47.5V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
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MXSMBG28A | Microchip Technology |
Description: TVS DIODE 28VWM 45.4VC SMBG |
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MXRT100KP58Ae3 | Microchip Technology |
Description: TVS DIODE 58VWM 114VC CASE 5A |
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MXSMBG100A | Microchip Technology |
Description: TVS DIODE 100VWM 162VC SMBG |
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CD978B | Microchip Technology |
Description: VOLTAGE REGULATOR |
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PIC32MZ1024EFK100-E/PF | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 100TQFP Packaging: Tray Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 180MHz Program Memory Size: 1MB (1M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C Oscillator Type: Internal Program Memory Type: FLASH Core Processor: MIPS32® M-Class Data Converters: A/D 40x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-TQFP (14x14) Grade: Automotive Number of I/O: 78 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 177 шт: термін постачання 21-31 дні (днів) |
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JAN1N5188/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 400 V |
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JAN1N5187/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 3A AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
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JANTX1N5187/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 3A AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
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JANTXV1N5186/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
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1N5189/TR | Microchip Technology |
Description: DIODE GEN PURP 500V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 500 V |
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1N5188/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 400 V |
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JANTX1N5186/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
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JANTXV1N5187/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
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JAN1N5186/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
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JAN1N5189/TR | Microchip Technology |
Description: DIODE GEN PURP 500V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 500 V |
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1N5186/TR | Microchip Technology |
Description: DIODE GEN PURP 100V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 100 V |
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JANTX1N5188/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 400 V |
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1N5187/TR | Microchip Technology |
Description: DIODE GEN PURP 200V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 200 V |
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1N5188US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 400 V |
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1N5183E3 | Microchip Technology |
Description: DIODE GP 7.5KV 100MA S AXIAL Packaging: Bulk Package / Case: S, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 100mA Supplier Device Package: S, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 7500 V Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA |
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1N4896/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -25°C ~ 100°C Voltage - Zener (Nom) (Vz): 12.8 V Impedance (Max) (Zzt): 400 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
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1N4896A/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Zener (Nom) (Vz): 12.8 V Impedance (Max) (Zzt): 400 Ohms Supplier Device Package: DO-7 Power - Max: 400 mW |
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1N4901/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED |
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1N4901A/TR | Microchip Technology |
Description: DIODE ZENER TEMP COMPENSATED |
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.jpg "MXLSMCJ40CAe3") |
MXLSMCJ40CAe3 | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 23.2A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
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.jpg "MASMCJ40CAe3") |
MASMCJ40CAe3 | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 23.2A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MASMCJ40CA | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 23.2A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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MXLSMCJ40CA | Microchip Technology |
Description: TVS DIODE 40VWM 64.5VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 23.2A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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| VXA4-300-58M9824000 | Microchip Technology | Description: VXA4-300-58M9824000 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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2304800-R | Microchip Technology |
Description: ACK-I-SLIMSASX8-2OCULINKX4-0.8M Packaging: Bulk For Use With/Related Products: SmartRAID 3200 RAID Adapters Accessory Type: Cable Part Status: Active |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ATXMEGA32C4-CUR | Microchip Technology |
Description: IC MCU 8/16BIT 32KB FLSH 49VFBGA Packaging: Tape & Reel (TR) Package / Case: 49-VFBGA Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (16K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 16x12b Core Size: 8/16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V Connectivity: I2C, IrDA, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 49-VFBGA (5x5) Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
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ATXMEGA32C4-CUR | Microchip Technology |
Description: IC MCU 8/16BIT 32KB FLSH 49VFBGA Packaging: Cut Tape (CT) Package / Case: 49-VFBGA Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (16K x 16) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 1K x 8 Core Processor: AVR Data Converters: A/D 16x12b Core Size: 8/16-Bit Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V Connectivity: I2C, IrDA, SPI, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 49-VFBGA (5x5) Part Status: Active Number of I/O: 34 DigiKey Programmable: Not Verified |
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MIC5252-2.85BM5TR | Microchip Technology |
Description: IC REG LINEAR LO NOISE MICROCAP Packaging: Bulk Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 2.85V Control Features: Enable Part Status: Active PSRR: 63dB ~ 48dB (10Hz ~ 10kHz) Voltage Dropout (Max): 0.25V @ 150mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 200 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MIC5252-3.0BM5TR | Microchip Technology |
Description: IC REG LINEAR LO NOISE MICROCAP Packaging: Bulk Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 63dB ~ 48dB (10Hz ~ 10kHz) Voltage Dropout (Max): 0.25V @ 150mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 200 µA |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
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MXSMCJLCE150Ae3 | Microchip Technology |
Description: TVS DIODE 150VWM 243VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 150V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 167V Voltage - Clamping (Max) @ Ipp: 243V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товар відсутній |
| PIC32MZ2064DAA288T-I/4J |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 1162.88 грн |
| PIC32MZ2064DAA288T-I/4J |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Cut Tape (CT)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 288LFBGA
Packaging: Cut Tape (CT)
Package / Case: 288-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 288-LFBGA (15x15)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1401.17 грн |
| 25+ | 1237.05 грн |
| 100+ | 1119.81 грн |
| PIC32MZ2025DAL176-V/2J |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 1.9V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 176-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 120 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1369.81 грн |
| 25+ | 1210.17 грн |
| 100+ | 1094.56 грн |
| PIC32MZ2064DAA169-I/HF |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
товар відсутній
| PIC32MZ2064DAB169-I/HF |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 169LFBGA
Packaging: Tray
Package / Case: 169-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 45x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, IrDA, LINbus, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I²S, POR, PWM, WDT
Supplier Device Package: 169-LFBGA (11x11)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 154 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1482.41 грн |
| 25+ | 1307.22 грн |
| 100+ | 1210.64 грн |
| JANTX1N5553US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
| JAN1N5553US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
| JAN1N5553/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
| JANS1N5553US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
товар відсутній
| JANTXV1N5553/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
| JANTX1N5553/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
| JANS1N5553/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
товар відсутній
| JANTXV1N5553US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
товар відсутній
| JANS1N5553 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Description: DIODE GEN PURP 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
товар відсутній
| JANTXV1N5553US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
товар відсутній
| 1N5553US/TR |
|
Виробник: Microchip Technology
Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
| 1N5553/TR |
|
Виробник: Microchip Technology
Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: STD RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
товар відсутній
| MASMBG100CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
Description: TVS DIODE 100VWM 162VC SMBG
товар відсутній
| MXLSMBG100Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC SMBG
Description: TVS DIODE 100VWM 162VC SMBG
товар відсутній
| PD-9512GC/AC-AU |
|
Виробник: Microchip Technology
Description: 12-PORT BT 60W NMS AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Current - Output: 1.1 A
Number of Ports: 12
Description: 12-PORT BT 60W NMS AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Current - Output: 1.1 A
Number of Ports: 12
товар відсутній
| MA15KP28CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 47.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 316A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 28VWM 47.5VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 316A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-204AR
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MXRT100KP58Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 114VC CASE 5A
Description: TVS DIODE 58VWM 114VC CASE 5A
товар відсутній
| PIC32MZ1024EFK100-E/PF |
|
Виробник: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® M-Class
Data Converters: A/D 40x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.1V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, PMP, SPI, SQI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 78
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 177 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 971.41 грн |
| 25+ | 857.44 грн |
| 100+ | 776.33 грн |
| JAN1N5188/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
товар відсутній
| JAN1N5187/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
| JANTX1N5187/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
| JANTXV1N5186/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
| 1N5189/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Description: DIODE GEN PURP 500V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
товар відсутній
| 1N5188/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
товар відсутній
| JANTX1N5186/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
| JANTXV1N5187/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
| JAN1N5186/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
| JAN1N5189/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Description: DIODE GEN PURP 500V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
товар відсутній
| 1N5186/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Description: DIODE GEN PURP 100V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
| JANTX1N5188/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
товар відсутній
| 1N5187/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Description: DIODE GEN PURP 200V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
| 1N5188US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
товар відсутній
| 1N5183E3 |
|
Виробник: Microchip Technology
Description: DIODE GP 7.5KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Description: DIODE GP 7.5KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
товар відсутній
| 1N4896/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
товар відсутній
| 1N4896A/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
Description: DIODE ZENER TEMP COMPENSATED
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Zener (Nom) (Vz): 12.8 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: DO-7
Power - Max: 400 mW
товар відсутній
| MXLSMCJ40CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
| MASMCJ40CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MASMCJ40CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| MXLSMCJ40CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
| VXA4-300-58M9824000 |
Виробник: Microchip Technology
Description: VXA4-300-58M9824000
Description: VXA4-300-58M9824000
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| 2304800-R |
|
Виробник: Microchip Technology
Description: ACK-I-SLIMSASX8-2OCULINKX4-0.8M
Packaging: Bulk
For Use With/Related Products: SmartRAID 3200 RAID Adapters
Accessory Type: Cable
Part Status: Active
Description: ACK-I-SLIMSASX8-2OCULINKX4-0.8M
Packaging: Bulk
For Use With/Related Products: SmartRAID 3200 RAID Adapters
Accessory Type: Cable
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5182.75 грн |
| ATXMEGA32C4-CUR |
|
Виробник: Microchip Technology
Description: IC MCU 8/16BIT 32KB FLSH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 49-VFBGA (5x5)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 8/16BIT 32KB FLSH 49VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 49-VFBGA (5x5)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
товар відсутній
| ATXMEGA32C4-CUR |
|
Виробник: Microchip Technology
Description: IC MCU 8/16BIT 32KB FLSH 49VFBGA
Packaging: Cut Tape (CT)
Package / Case: 49-VFBGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 49-VFBGA (5x5)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 8/16BIT 32KB FLSH 49VFBGA
Packaging: Cut Tape (CT)
Package / Case: 49-VFBGA
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (16K x 16)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: AVR
Data Converters: A/D 16x12b
Core Size: 8/16-Bit
Voltage - Supply (Vcc/Vdd): 1.6V ~ 3.6V
Connectivity: I2C, IrDA, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 49-VFBGA (5x5)
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
товар відсутній
| MIC5252-2.85BM5TR |
|
Виробник: Microchip Technology
Description: IC REG LINEAR LO NOISE MICROCAP
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
Part Status: Active
PSRR: 63dB ~ 48dB (10Hz ~ 10kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
Description: IC REG LINEAR LO NOISE MICROCAP
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.85V
Control Features: Enable
Part Status: Active
PSRR: 63dB ~ 48dB (10Hz ~ 10kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1664+ | 11.7 грн |
| MIC5252-3.0BM5TR |
|
Виробник: Microchip Technology
Description: IC REG LINEAR LO NOISE MICROCAP
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 63dB ~ 48dB (10Hz ~ 10kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
Description: IC REG LINEAR LO NOISE MICROCAP
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 63dB ~ 48dB (10Hz ~ 10kHz)
Voltage Dropout (Max): 0.25V @ 150mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 200 µA
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1700+ | 11.7 грн |
| MXSMCJLCE150Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 243VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 150VWM 243VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній