Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (354146) > Сторінка 1526 з 5903
Фото | Назва | Виробник | Інформація |
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FBP-AVR-DB-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY BASIC Packaging: Electronic Delivery For Use With/Related Products: AVR DB Type: License Applications: Safety, Automotive Edition: Basic Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FBP-PIC16F176X-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY BASIC Packaging: Electronic Delivery For Use With/Related Products: PIC16F176x Type: License Applications: Safety, Automotive Edition: Basic Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FBP-PIC18-Q83-Q84-ISO26262 | Microchip Technology | Description: ISO26262 FUNC SAFETY BASIC |
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FBP-PIC16F153XX-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY BASIC Packaging: Electronic Delivery For Use With/Related Products: PIC16F153xx Type: License Applications: Safety, Automotive Edition: Basic Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FSP-PIC16F153XX-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY STARTER Packaging: Electronic Delivery For Use With/Related Products: PIC16F153xx Type: License Applications: Safety, Automotive Edition: Starter Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FBP-AVR-DD-ISO26262 | Microchip Technology | Description: ISO26262 FUNC SAFETY BASIC |
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FSP-AVR-DA-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY STARTER Packaging: Electronic Delivery For Use With/Related Products: AVR DA Type: License Applications: Safety, Automotive Edition: Starter Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FBP-PIC18-K40-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY BASIC Packaging: Electronic Delivery For Use With/Related Products: PIC18-K40 Type: License Applications: Safety, Automotive Edition: Basic Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FBP-PIC18-K83-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY BASIC Packaging: Electronic Delivery For Use With/Related Products: PIC18-K83 Type: License Applications: Safety, Automotive Edition: Basic Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FBP-MEGAAVR-0-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY BASIC Packaging: Electronic Delivery For Use With/Related Products: megaAVR-0 Type: License Applications: Safety, Automotive Edition: Basic Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FBP-PIC18-K80-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY BASIC Packaging: Electronic Delivery For Use With/Related Products: PIC18-K80 Type: License Applications: Safety, Automotive Edition: Basic Media Delivery Type: Electronically Delivered Part Status: Active |
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FBP-AVR-DA-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY BASIC Packaging: Electronic Delivery For Use With/Related Products: AVR DA Type: License Applications: Safety, Automotive Edition: Basic Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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FFP-AVR-DA-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY FULL Packaging: Electronic Delivery For Use With/Related Products: AVR DA Type: License Applications: Safety, Automotive Edition: Full Media Delivery Type: Electronically Delivered Part Status: Active |
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FSP-PIC18-Q84-ISO26262 | Microchip Technology |
Description: ISO26262 FUNC SAFETY STARTER Packaging: Electronic Delivery For Use With/Related Products: PIC18-Q83/Q84 Type: License Applications: Safety, Automotive Edition: Starter Media Delivery Type: Electronically Delivered Part Status: Active |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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1N5956BE3 | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1.19 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 152 V |
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DSC1001BI2-013.0810T | Microchip Technology |
Description: MEMS OSC XO 13.0810MHZ LVCMOS Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 6.3mA Height - Seated (Max): 0.035" (0.90mm) Part Status: Active Frequency: 13.081 MHz Base Resonator: MEMS |
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DSC1001BI2-013.0810 | Microchip Technology |
Description: MEMS OSC XO 13.0810MHZ CMOS SMD Packaging: Tube Package / Case: 4-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 6.3mA Height - Seated (Max): 0.035" (0.90mm) Part Status: Active Frequency: 13.081 MHz Base Resonator: MEMS |
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1N5918B/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
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1N5918UR-1 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±20% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
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MX1N5918BUR-1 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±5% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 4 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 2 V |
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MMA052AA | Microchip Technology | Description: MMIC, DC-22GHZ, 0.5W AMPLIFIER D |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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1N5811US/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
на замовлення 126 шт: термін постачання 21-31 дні (днів) |
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1N5811US/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 3A B SQ-MELF Packaging: Cut Tape (CT) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
на замовлення 248 шт: термін постачання 21-31 дні (днів) |
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JANTXV1N5811US/TR | Microchip Technology |
Description: DIODE GEN PURP 150V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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MNS1N5811US/TR | Microchip Technology |
Description: DIODE GP 150V 3A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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JANS1N5811URS | Microchip Technology |
Description: DIODE GEN PURP 150V 6A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
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JANS1N5811 | Microchip Technology |
Description: DIODE GEN PURP 150V 6A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
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1N5811USE3 | Microchip Technology |
Description: DIODE GEN PURP 150V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
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JANS1N5811US | Microchip Technology |
Description: DIODE GEN PURP 150V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A |
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1N5811A/TR | Microchip Technology |
Description: DIODE GP REV 150V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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1N5811AUS/TR | Microchip Technology |
Description: DIODE GP 150V 3A SQ-MELF B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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1N5811URS | Microchip Technology |
Description: DIODE GP 150V 3A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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MNS1N5811US | Microchip Technology |
Description: DIODE GP 150V 3A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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1N5811U4 | Microchip Technology |
Description: DIODE GEN PURP 150V 6A U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 525 µs Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: U4 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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JANTX1N5811URS/TR | Microchip Technology |
Description: DIODE GP 150V 3A SQ-MELF B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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JAN1N5811URS/TR | Microchip Technology |
Description: DIODE GP 150V 3A SQ-MELF B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
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1N5820/TR | Microchip Technology |
Description: DIODE SCHOTTKY 20V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
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1N5820USE3 | Microchip Technology |
Description: DIODE SCHOTTKY 20V 3A SQ-MELF B Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
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JAN1N5816R | Microchip Technology |
Description: DIODE GEN PURP 150V 20A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 300pF @ 10V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Qualification: MIL-PRF-19500/478 |
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JANTXV1N5816 | Microchip Technology |
Description: DIODE GEN PURP 150V 20A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 10V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Qualification: MIL-PRF-19500/478 |
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JANS1N5816R | Microchip Technology |
Description: DIODE GEN PURP 150V 20A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 300pF @ 10V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Qualification: MIL-PRF-19500/478 |
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JANTX1N5816R | Microchip Technology |
Description: DIODE GEN PURP 150V 20A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 300pF @ 10V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Qualification: MIL-PRF-19500/478 |
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1N5816E3 | Microchip Technology |
Description: DIODE GEN PURP 150V 20A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 10V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
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JANTXV1N5816R | Microchip Technology |
Description: DIODE GEN PURP 150V 20A DO203AA Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 300pF @ 10V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V Qualification: MIL-PRF-19500/478 |
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MIC2287C-24YML-TR | Microchip Technology |
Description: IC LED DRVR RGLTR PWM 750MA 8MLF Packaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 105°C (TJ) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 8-MLF® (2x2) Dimming: Analog, PWM Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 10V |
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MIC2287C-24YML-TR | Microchip Technology |
Description: IC LED DRVR RGLTR PWM 750MA 8MLF Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad, 8-MLF® Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 1.2MHz Type: DC DC Regulator Operating Temperature: -40°C ~ 105°C (TJ) Applications: Backlight Current - Output / Channel: 750mA (Switch) Internal Switch(s): Yes Topology: Step-Up (Boost) Supplier Device Package: 8-MLF® (2x2) Dimming: Analog, PWM Voltage - Supply (Min): 2.5V Voltage - Supply (Max): 10V |
на замовлення 2567 шт: термін постачання 21-31 дні (днів) |
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JANTX1N4114CUR-1 | Microchip Technology | Description: DIODE ZENER 20V 500MW DO213AA |
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M1.5KE36A/TR | Microchip Technology |
Description: TVS 36V 5% 1500W UNI Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 30A Voltage - Reverse Standoff (Typ): 30.8V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 34.2V Voltage - Clamping (Max) @ Ipp: 49.9V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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JANTXV1N4125-1 | Microchip Technology | Description: DIODE ZENER 47V 500MW DO35 |
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AAP803A1 | Microchip Technology | Description: CONDENSER MICROPHONE PRE-AMP |
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VXM8-1015-28M6363000 | Microchip Technology | Description: CUSTOM SURFACE MOUNT XTAL |
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DSA6111JL2B-027.0000V05 | Microchip Technology | Description: MEMS OSCILLATOR SMD |
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DSC6311JA1BB-027.0000T | Microchip Technology | Description: SPREAD SPECTRUM MEMS OSC +-0.5% |
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DSA6331JL1CB-027.0000TVAO | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-105C |
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DSA6101JL3B-027.0000BV02 | Microchip Technology | Description: OSC MEMS AUTO -40C-105C SMD |
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DSC6001HE3B-027.1200T | Microchip Technology | Description: MEMS OSC SMD |
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DSC6151HI2B-027.0000T | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
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DSC6331JI2CB-027.0000T | Microchip Technology | Description: MEMS CMOS OSC SMD |
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DSC6102MI2B-027.0000T | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
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DSA6311JA1AB-027.0000TVAO | Microchip Technology | Description: MEMS OSC AUTO -40C-125C |
товар відсутній |
FBP-AVR-DB-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: AVR DB
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: AVR DB
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 79671.5 грн |
FBP-PIC16F176X-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC16F176x
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC16F176x
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 79671.5 грн |
FBP-PIC18-Q83-Q84-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Description: ISO26262 FUNC SAFETY BASIC
товар відсутній
FBP-PIC16F153XX-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC16F153xx
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC16F153xx
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 74524.42 грн |
FSP-PIC16F153XX-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: PIC16F153xx
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: PIC16F153xx
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 148974.55 грн |
FBP-AVR-DD-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Description: ISO26262 FUNC SAFETY BASIC
товар відсутній
FSP-AVR-DA-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 159263.24 грн |
FBP-PIC18-K40-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K40
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K40
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 79671.5 грн |
FBP-PIC18-K83-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K83
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K83
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 79671.5 грн |
FBP-MEGAAVR-0-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: megaAVR-0
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: megaAVR-0
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 74524.42 грн |
FBP-PIC18-K80-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K80
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-K80
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
товар відсутній
FBP-AVR-DA-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY BASIC
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Basic
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 79671.5 грн |
FFP-AVR-DA-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY FULL
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Full
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY FULL
Packaging: Electronic Delivery
For Use With/Related Products: AVR DA
Type: License
Applications: Safety, Automotive
Edition: Full
Media Delivery Type: Electronically Delivered
Part Status: Active
товар відсутній
FSP-PIC18-Q84-ISO26262 |
Виробник: Microchip Technology
Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-Q83/Q84
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
Description: ISO26262 FUNC SAFETY STARTER
Packaging: Electronic Delivery
For Use With/Related Products: PIC18-Q83/Q84
Type: License
Applications: Safety, Automotive
Edition: Starter
Media Delivery Type: Electronically Delivered
Part Status: Active
на замовлення 15 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 148974.55 грн |
1N5956BE3 |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.19 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.19 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
товар відсутній
DSC1001BI2-013.0810T |
Виробник: Microchip Technology
Description: MEMS OSC XO 13.0810MHZ LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 13.081 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 13.0810MHZ LVCMOS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 13.081 MHz
Base Resonator: MEMS
товар відсутній
DSC1001BI2-013.0810 |
Виробник: Microchip Technology
Description: MEMS OSC XO 13.0810MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 13.081 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 13.0810MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 6.3mA
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Active
Frequency: 13.081 MHz
Base Resonator: MEMS
товар відсутній
1N5918B/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товар відсутній
1N5918UR-1 |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±20%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товар відсутній
MX1N5918BUR-1 |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
товар відсутній
MMA052AA |
Виробник: Microchip Technology
Description: MMIC, DC-22GHZ, 0.5W AMPLIFIER D
Description: MMIC, DC-22GHZ, 0.5W AMPLIFIER D
на замовлення 5 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 13541.29 грн |
1N5811US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 126 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
126+ | 479.02 грн |
1N5811US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 248 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 515.26 грн |
JANTXV1N5811US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
MNS1N5811US/TR |
Виробник: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
JANS1N5811URS |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Description: DIODE GEN PURP 150V 6A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
товар відсутній
JANS1N5811 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Description: DIODE GEN PURP 150V 6A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
товар відсутній
1N5811USE3 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
товар відсутній
JANS1N5811US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
товар відсутній
1N5811A/TR |
Виробник: Microchip Technology
Description: DIODE GP REV 150V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GP REV 150V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
1N5811AUS/TR |
Виробник: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
1N5811URS |
Виробник: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
MNS1N5811US |
Виробник: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
1N5811U4 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 6A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 525 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: U4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 6A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 525 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: U4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 925 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
JANTX1N5811URS/TR |
Виробник: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
JAN1N5811URS/TR |
Виробник: Microchip Technology
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GP 150V 3A SQ-MELF B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
товар відсутній
1N5820/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky, Reverse Polarity
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
товар відсутній
1N5820USE3 |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 20V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A SQ-MELF B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
товар відсутній
JAN1N5816R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
товар відсутній
JANTXV1N5816 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
товар відсутній
JANS1N5816R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
товар відсутній
JANTX1N5816R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
товар відсутній
1N5816E3 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
товар відсутній
JANTXV1N5816R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
Description: DIODE GEN PURP 150V 20A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 300pF @ 10V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Qualification: MIL-PRF-19500/478
товар відсутній
MIC2287C-24YML-TR |
Виробник: Microchip Technology
Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-MLF® (2x2)
Dimming: Analog, PWM
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 10V
Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-MLF® (2x2)
Dimming: Analog, PWM
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 10V
товар відсутній
MIC2287C-24YML-TR |
Виробник: Microchip Technology
Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-MLF® (2x2)
Dimming: Analog, PWM
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 10V
Description: IC LED DRVR RGLTR PWM 750MA 8MLF
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad, 8-MLF®
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.2MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 105°C (TJ)
Applications: Backlight
Current - Output / Channel: 750mA (Switch)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 8-MLF® (2x2)
Dimming: Analog, PWM
Voltage - Supply (Min): 2.5V
Voltage - Supply (Max): 10V
на замовлення 2567 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 70.37 грн |
25+ | 55.6 грн |
100+ | 50.74 грн |
JANTX1N4114CUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 20V 500MW DO213AA
Description: DIODE ZENER 20V 500MW DO213AA
товар відсутній
M1.5KE36A/TR |
Виробник: Microchip Technology
Description: TVS 36V 5% 1500W UNI
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS 36V 5% 1500W UNI
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 30.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 34.2V
Voltage - Clamping (Max) @ Ipp: 49.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
JANTXV1N4125-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 47V 500MW DO35
Description: DIODE ZENER 47V 500MW DO35
товар відсутній
VXM8-1015-28M6363000 |
Виробник: Microchip Technology
Description: CUSTOM SURFACE MOUNT XTAL
Description: CUSTOM SURFACE MOUNT XTAL
товар відсутній
DSA6111JL2B-027.0000V05 |
Виробник: Microchip Technology
Description: MEMS OSCILLATOR SMD
Description: MEMS OSCILLATOR SMD
товар відсутній
DSC6311JA1BB-027.0000T |
Виробник: Microchip Technology
Description: SPREAD SPECTRUM MEMS OSC +-0.5%
Description: SPREAD SPECTRUM MEMS OSC +-0.5%
товар відсутній
DSA6331JL1CB-027.0000TVAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-105C
Description: MEMS OSC AUTO LOWPWR -40C-105C
товар відсутній
DSA6101JL3B-027.0000BV02 |
Виробник: Microchip Technology
Description: OSC MEMS AUTO -40C-105C SMD
Description: OSC MEMS AUTO -40C-105C SMD
товар відсутній
DSC6151HI2B-027.0000T |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
DSC6102MI2B-027.0000T |
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
товар відсутній
DSA6311JA1AB-027.0000TVAO |
Виробник: Microchip Technology
Description: MEMS OSC AUTO -40C-125C
Description: MEMS OSC AUTO -40C-125C
товар відсутній