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MIC2212-MMBMLTR Microchip Technology MCRLS03454-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 2.8V/2.8V 10MLF
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad, 10-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 10-MLF® (3x3)
Voltage - Output (Min/Fixed): 2.8V, 2.8V
Control Features: Enable, Power On Reset
Part Status: Active
PSRR: 60dB ~ 40dB (1KHz ~ 20kHz)
Voltage Dropout (Max): 0.25V @ 150mA, 0.42V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 758 шт:
термін постачання 21-31 дні (днів)
758+42.78 грн
Мінімальне замовлення: 758
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JAN1N6470 JAN1N6470 Microchip Technology 11064-sd49a-datasheet Description: TVS DIODE 6VWM 11VC AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 775A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/552
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+1577.84 грн
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JAN1N6146A JAN1N6146A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 11.4VWM 21VC C AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.4A
Voltage - Reverse Standoff (Typ): 11.4V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+1294.62 грн
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AT93C56A-10TU-2.7-T AT93C56A-10TU-2.7-T Microchip Technology doc3378.pdf Description: IC EEPROM 2KBIT SPI 2MHZ 8TSSOP
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AT93C56A-10TU-1.8-T AT93C56A-10TU-1.8-T Microchip Technology doc3378.pdf Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 10ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
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JANTX1N6116/TR JANTX1N6116/TR Microchip Technology Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
1+1476.02 грн
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JANTX1N6116/TR JANTX1N6116/TR Microchip Technology Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
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AT93C56B-XPD-T AT93C56B-XPD-T Microchip Technology filehandler.aspx?ddocname=en589813 Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
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MCP48CVB04T-E/ML MCP48CVB04T-E/ML Microchip Technology MCP48CxBx4_8_2021.pdf Description: IC DAC 8BIT V-OUT 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 8
Data Interface: SPI
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.1, ±0.1
Differential Output: No
DigiKey Programmable: Not Verified
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MCP48CVB18T-E/ML MCP48CVB18T-E/ML Microchip Technology MCP48CxBx4_8_2021.pdf Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: SPI
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 8
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
DigiKey Programmable: Not Verified
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+729.03 грн
Мінімальне замовлення: 3300
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MCP48CVB28T-E/ML MCP48CVB28T-E/ML Microchip Technology MCP48CxBx4_8_2021.pdf Description: QCTAL CHANNEL, 12-BIT, VOLATILE,
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
3300+754.26 грн
Мінімальне замовлення: 3300
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MCP47CVB14-E/ML MCP47CVB14-E/ML Microchip Technology MCP47CXBX4_8-Data-Sheet-20006537B.pdf Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: I2C
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
1+475.75 грн
25+381.14 грн
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MCP47CMB14-E/ML MCP47CMB14-E/ML Microchip Technology MCP47CXBXX-Data-Sheet-DS20006089B.pdf Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: I2C
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
DigiKey Programmable: Not Verified
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+547.62 грн
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MMA040PP5 MMA040PP5 Microchip Technology MMA040PP5.pdf Description: IC RF AMP GPS 0HZ-27GHZ 32QFN
Packaging: Tray
Package / Case: 32-TFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 0Hz ~ 27GHz
RF Type: General Purpose
Voltage - Supply: 8V
Gain: 15.5dB
Current - Supply: 60mA
Noise Figure: 2dB
P1dB: 16dBm
Test Frequency: 6GHz ~ 12GHz
Supplier Device Package: 32-QFN (5x5)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+9176.12 грн
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MXSMLG85CA Microchip Technology 10563-msml-datasheet Description: TVS DIODE 85VWM 137VC SMLG
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MPS2R10-606/TR MPS2R10-606/TR Microchip Technology 135441-mps2r10-606-datasheet Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Tape & Reel (TR)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
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MPS2R10-606/TR MPS2R10-606/TR Microchip Technology 135441-mps2r10-606-datasheet Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Cut Tape (CT)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
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MSMCJLCE40Ae3 MSMCJLCE40Ae3 Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLG150A MSMLG150A Microchip Technology msmlg5_j5_series_datasheet_revd.pdf Description: TVS DIODE 150VWM 243VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLG100CA MSMLG100CA Microchip Technology msmlg5_j5_series_datasheet_revd.pdf Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLG120CAe3 MSMLG120CAe3 Microchip Technology msmlg5_j5_series_datasheet_revd.pdf Description: TVS DIODE 120VWM 193VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMLG12CA MSMLG12CA Microchip Technology msmlg5_j5_series_datasheet_revd.pdf Description: TVS DIODE 12VWM 19.9VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 150.6A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMLG13CA MSMLG13CA Microchip Technology msmlg5_j5_series_datasheet_revd.pdf Description: TVS DIODE 13VWM 21.5VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.4A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMCJLCE45A MSMCJLCE45A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 45VWM 72.7VC DO214AB
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MSMCJLCE90A MSMCJLCE90A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MSMLG100Ae3 MSMLG100Ae3 Microchip Technology msmlg5_j5_series_datasheet_revd.pdf Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCJ10CA MXLSMCJ10CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 10VWM 17VC DO214AB
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MSMCJ10CA/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 10VWM 17VC SMCJ
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MASMCJ10CAE3/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 10VWM 17VC SMCJ
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MASMCJ10CA MASMCJ10CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 10VWM 17VC DO214AB
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MXSMCJ10CAe3 MXSMCJ10CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 10VWM 17VC DO214AB
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MSMCJ10CAE3/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 10VWM 17VC SMCJ
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MXLSMCJ10CAe3 MXLSMCJ10CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 10VWM 17VC DO214AB
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MXSMCJ10CA MXSMCJ10CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 10VWM 17VC DO214AB
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JANS1N4494C JANS1N4494C Microchip Technology Description: DIODE ZENER 160V 1.5W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Qualification: MIL-PRF-19500/406
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JANTXV1N4494C JANTXV1N4494C Microchip Technology Description: DIODE ZENER 160V 1.5W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Qualification: MIL-PRF-19500/406
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JANSP2N3440L JANSP2N3440L Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANKCBM2N3440 JANKCBM2N3440 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSD2N3440 JANSD2N3440 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSP2N3440 JANSP2N3440 Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSR2N3440L JANSR2N3440L Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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ATWINC3400-MR210UA143-T ATWINC3400-MR210UA143-T Microchip Technology IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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ATWINC3400-MR210UA143-T ATWINC3400-MR210UA143-T Microchip Technology IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 331 шт:
термін постачання 21-31 дні (днів)
1+491.15 грн
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ATWINC3400-MR210UA143 ATWINC3400-MR210UA143 Microchip Technology IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+735.87 грн
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Jantxv2N6308 Microchip Technology 6123-2n6306-pdf Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
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Jantx2N6308 Microchip Technology 6123-2n6306-pdf Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
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JAN2N6301 JAN2N6301 Microchip Technology Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Grade: Military
Qualification: MIL-PRF-19500/539
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JANTXV2N6306 Microchip Technology 6123-2n6306-pdf Description: TRANS NPN 250V 8A TO204AA
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JAN2N6306 Microchip Technology 6123-2n6306-pdf Description: TRANS NPN 250V 8A TO204AA
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JANTX2N6306 Microchip Technology 6123-2n6306-pdf Description: TRANS NPN 250V 8A TO204AA
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JANTX2N6300 JANTX2N6300 Microchip Technology Description: TRANS NPN DARL 60V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Qualification: MIL-PRF-19500/539
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2N6301E3 2N6301E3 Microchip Technology Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
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2N6301P Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
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2N6306 2N6306 Microchip Technology 6123-2n6306-datasheet Description: NPN TRANSISTOR
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2N6308T1 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
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JANTX2N6301P Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
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JANTXV2N6301P Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
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2N6303 Microchip Technology Description: POWER BJT
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2N6300 2N6300 Microchip Technology 77283-lds-0171-datasheet Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
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JAN2N6301P Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
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MIC2212-MMBMLTR MCRLS03454-1.pdf?t.download=true&u=5oefqw
Виробник: Microchip Technology
Description: IC REG LINEAR 2.8V/2.8V 10MLF
Packaging: Bulk
Package / Case: 10-VFDFN Exposed Pad, 10-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: 10-MLF® (3x3)
Voltage - Output (Min/Fixed): 2.8V, 2.8V
Control Features: Enable, Power On Reset
Part Status: Active
PSRR: 60dB ~ 40dB (1KHz ~ 20kHz)
Voltage Dropout (Max): 0.25V @ 150mA, 0.42V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 758 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
758+42.78 грн
Мінімальне замовлення: 758
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JAN1N6470 11064-sd49a-datasheet
JAN1N6470
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 11VC AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 775A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/552
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1577.84 грн
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JAN1N6146A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JAN1N6146A
Виробник: Microchip Technology
Description: TVS DIODE 11.4VWM 21VC C AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.4A
Voltage - Reverse Standoff (Typ): 11.4V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1294.62 грн
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AT93C56A-10TU-2.7-T doc3378.pdf
AT93C56A-10TU-2.7-T
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT SPI 2MHZ 8TSSOP
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AT93C56A-10TU-1.8-T doc3378.pdf
AT93C56A-10TU-1.8-T
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 10ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
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JANTX1N6116/TR
JANTX1N6116/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1476.02 грн
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JANTX1N6116/TR
JANTX1N6116/TR
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Cut Tape (CT)
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.4A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
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AT93C56B-XPD-T filehandler.aspx?ddocname=en589813
AT93C56B-XPD-T
Виробник: Microchip Technology
Description: IC EEPROM 2KBIT 3-WIRE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: 3-Wire Serial
Memory Organization: 256 x 8, 128 x 16
DigiKey Programmable: Not Verified
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MCP48CVB04T-E/ML MCP48CxBx4_8_2021.pdf
MCP48CVB04T-E/ML
Виробник: Microchip Technology
Description: IC DAC 8BIT V-OUT 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 8
Data Interface: SPI
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.1, ±0.1
Differential Output: No
DigiKey Programmable: Not Verified
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MCP48CVB18T-E/ML MCP48CxBx4_8_2021.pdf
MCP48CVB18T-E/ML
Виробник: Microchip Technology
Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: SPI
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 8
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
DigiKey Programmable: Not Verified
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+729.03 грн
Мінімальне замовлення: 3300
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MCP48CVB28T-E/ML MCP48CxBx4_8_2021.pdf
MCP48CVB28T-E/ML
Виробник: Microchip Technology
Description: QCTAL CHANNEL, 12-BIT, VOLATILE,
на замовлення 3300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3300+754.26 грн
Мінімальне замовлення: 3300
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MCP47CVB14-E/ML MCP47CXBX4_8-Data-Sheet-20006537B.pdf
MCP47CVB14-E/ML
Виробник: Microchip Technology
Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: I2C
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+475.75 грн
25+381.14 грн
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MCP47CMB14-E/ML MCP47CXBXX-Data-Sheet-DS20006089B.pdf
MCP47CMB14-E/ML
Виробник: Microchip Technology
Description: IC DAC 10BIT V-OUT 20QFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Output Type: Voltage - Buffered
Mounting Type: Surface Mount
Number of Bits: 10
Data Interface: I2C
Reference Type: External, Internal, Supply
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 1.8V ~ 5.5V
Voltage - Supply, Digital: 1.8V ~ 5.5V
Settling Time: 16µs (Typ)
Supplier Device Package: 20-QFN (4x4)
Architecture: R-2R
Number of D/A Converters: 4
INL/DNL (LSB): ±0.25, ±0.25
Differential Output: No
DigiKey Programmable: Not Verified
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+547.62 грн
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MMA040PP5 MMA040PP5.pdf
MMA040PP5
Виробник: Microchip Technology
Description: IC RF AMP GPS 0HZ-27GHZ 32QFN
Packaging: Tray
Package / Case: 32-TFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 0Hz ~ 27GHz
RF Type: General Purpose
Voltage - Supply: 8V
Gain: 15.5dB
Current - Supply: 60mA
Noise Figure: 2dB
P1dB: 16dBm
Test Frequency: 6GHz ~ 12GHz
Supplier Device Package: 32-QFN (5x5)
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9176.12 грн
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MXSMLG85CA 10563-msml-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 85VWM 137VC SMLG
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MPS2R10-606/TR 135441-mps2r10-606-datasheet
MPS2R10-606/TR
Виробник: Microchip Technology
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Tape & Reel (TR)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
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MPS2R10-606/TR 135441-mps2r10-606-datasheet
MPS2R10-606/TR
Виробник: Microchip Technology
Description: DIODE SI PIN NON HERMETIC MMSM
Packaging: Cut Tape (CT)
Diode Type: PIN - 1 Pair Common Anode
Operating Temperature: -65°C ~ 125°C
Voltage - Peak Reverse (Max): 150V
Current - Max: 200 mA
Power Dissipation (Max): 1 W
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MSMCJLCE40Ae3 10562-msmclce-datasheet
MSMCJLCE40Ae3
Виробник: Microchip Technology
Description: TVS DIODE 40VWM 64.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLG150A msmlg5_j5_series_datasheet_revd.pdf
MSMLG150A
Виробник: Microchip Technology
Description: TVS DIODE 150VWM 243VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.4A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLG100CA msmlg5_j5_series_datasheet_revd.pdf
MSMLG100CA
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMLG120CAe3 msmlg5_j5_series_datasheet_revd.pdf
MSMLG120CAe3
Виробник: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 15.6A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMLG12CA msmlg5_j5_series_datasheet_revd.pdf
MSMLG12CA
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 19.9VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 150.6A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMLG13CA msmlg5_j5_series_datasheet_revd.pdf
MSMLG13CA
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139.4A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-215AB (SMLG)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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MSMCJLCE45A 10562-msmclce-datasheet
MSMCJLCE45A
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
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MSMCJLCE90A 10562-msmclce-datasheet
MSMCJLCE90A
Виробник: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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MSMLG100Ae3 msmlg5_j5_series_datasheet_revd.pdf
MSMLG100Ae3
Виробник: Microchip Technology
Description: TVS DIODE 100VWM 162VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLSMCJ10CA 10561-msmc-datasheet
MXLSMCJ10CA
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
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MSMCJ10CA/TR 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
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MASMCJ10CAE3/TR 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
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MASMCJ10CA 10561-msmc-datasheet
MASMCJ10CA
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
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MXSMCJ10CAe3 10561-msmc-datasheet
MXSMCJ10CAe3
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
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MSMCJ10CAE3/TR 10561-msmc-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC SMCJ
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MXLSMCJ10CAe3 10561-msmc-datasheet
MXLSMCJ10CAe3
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
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MXSMCJ10CA 10561-msmc-datasheet
MXSMCJ10CA
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC DO214AB
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JANS1N4494C
JANS1N4494C
Виробник: Microchip Technology
Description: DIODE ZENER 160V 1.5W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Qualification: MIL-PRF-19500/406
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JANTXV1N4494C
JANTXV1N4494C
Виробник: Microchip Technology
Description: DIODE ZENER 160V 1.5W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 250 nA @ 128 V
Qualification: MIL-PRF-19500/406
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JANSP2N3440L
JANSP2N3440L
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANKCBM2N3440
JANKCBM2N3440
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSD2N3440
JANSD2N3440
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSP2N3440
JANSP2N3440
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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JANSR2N3440L
JANSR2N3440L
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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ATWINC3400-MR210UA143-T IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf
ATWINC3400-MR210UA143-T
Виробник: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tape & Reel (TR)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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ATWINC3400-MR210UA143-T IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf
ATWINC3400-MR210UA143-T
Виробник: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 331 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+491.15 грн
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ATWINC3400-MR210UA143 IEEE-802.11-bgn-Network-Controller-with-Integrated-Bluetooth-Low-Energy-Module-Data-Sheet-70005350D.pdf
ATWINC3400-MR210UA143
Виробник: Microchip Technology
Description: RF TXRX MOD BT WIFIU.FL SMD
Packaging: Tray
Package / Case: 36-SMD Module
Sensitivity: -95dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 420kB RAM
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: 18.3dBm
Data Rate: 400kbps
Protocol: 802.11b/g/n, Bluetooth v5.0
Current - Receiving: 23.7mA
Current - Transmitting: 24mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 16-QAM, 64-QAM, BPSK, CCK, DBPSK, DQPSK, DSSS, OFDM, QPSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+735.87 грн
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Jantxv2N6308 6123-2n6306-pdf
Виробник: Microchip Technology
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
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Jantx2N6308 6123-2n6306-pdf
Виробник: Microchip Technology
Description: TRANS NPN 350V 8A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
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JAN2N6301
JAN2N6301
Виробник: Microchip Technology
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
Grade: Military
Qualification: MIL-PRF-19500/539
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JANTXV2N6306 6123-2n6306-pdf
Виробник: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
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JAN2N6306 6123-2n6306-pdf
Виробник: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
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JANTX2N6306 6123-2n6306-pdf
Виробник: Microchip Technology
Description: TRANS NPN 250V 8A TO204AA
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JANTX2N6300
JANTX2N6300
Виробник: Microchip Technology
Description: TRANS NPN DARL 60V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Qualification: MIL-PRF-19500/539
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2N6301E3
2N6301E3
Виробник: Microchip Technology
Description: TRANS NPN DARL 80V 500UA TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 500 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
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2N6301P
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
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2N6306 6123-2n6306-datasheet
2N6306
Виробник: Microchip Technology
Description: NPN TRANSISTOR
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2N6308T1
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 5V @ 2.67A, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 3A, 5V
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 125 W
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JANTX2N6301P
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
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JANTXV2N6301P
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
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2N6303
Виробник: Microchip Technology
Description: POWER BJT
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2N6300 77283-lds-0171-datasheet
2N6300
Виробник: Microchip Technology
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
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JAN2N6301P
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 75 W
товару немає в наявності
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