Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (359366) > Сторінка 1530 з 5990
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| JAN1N6049A | Microchip Technology | Description: TVS DIODE 22VWM 37.5VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANTXV1N6040A/TR | Microchip Technology |
 Description: TVS DIODE 9VWM 15.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANTXV1N6043A | Microchip Technology | Description: TVS DIODE 12VWM 21.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JAN1N6042A | Microchip Technology | Description: TVS DIODE 11VWM 18.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTXV1N6048A | Microchip Technology | Description: TVS DIODE 20VWM 33.2VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTX1N6049A | Microchip Technology | Description: TVS DIODE 22VWM 37.5VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTXV1N6040A | Microchip Technology | Description: TVS DIODE 9VWM 15.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANTXV1N6046A | Microchip Technology | Description: TVS DIODE 17VWM 27.7VC DO13 |
товару немає в наявності |
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1N6048A/TR | Microchip Technology |
Description: TVS DIODE 20VWM 33.2VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 45A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-13 Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 33.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
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1N6049A/TR | Microchip Technology |
Description: TVS DIODE 22VWM 37.5VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 40A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-13 Bidirectional Channels: 1 Voltage - Breakdown (Min): 25.7V Voltage - Clamping (Max) @ Ipp: 37.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N6047A/TR | Microchip Technology |
Description: TVS DIODE 18VWM 30.6VC DO13 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N6040A/TR | Microchip Technology |
Description: TVS DIODE 9VWM 15.6VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 96A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-13 Bidirectional Channels: 1 Voltage - Breakdown (Min): 10.5V Voltage - Clamping (Max) @ Ipp: 15.6V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N6041A/TR | Microchip Technology |
Description: TVS DIODE 10VWM 16.7VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 90A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 16.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
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1N6044A/TR | Microchip Technology |
Description: TVS DIODE 13VWM 22.5VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 67A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-13 Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.2V Voltage - Clamping (Max) @ Ipp: 22.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
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| GC2530-30 | Microchip Technology | Description: SI SRD HERMETIC PILL |
товару немає в наявності |
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MAPLAD15KP10Ae3 | Microchip Technology |
Description: TVS DIODE 10VWM 17VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 882A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
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MPLAD7.5KP36A/TR | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC MINIPLAD Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 129A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
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MPLAD7.5KP36A/TR | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC MINIPLAD Packaging: Cut Tape (CT) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 129A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Mini-PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 7500W (7.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
на замовлення 200 шт: термін постачання 21-31 дні (днів) |
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MXLPLAD15KP36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 258A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
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MXL15KP36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 59.7VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 251A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 59.7V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
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MA15KP36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 59.7VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 251A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 59.7V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
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MX15KP36A | Microchip Technology |
Description: TVS DIODE 36VWM 59.7VC CASE 5A |
товару немає в наявності |
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MX15KP36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 59.7VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 251A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 59.7V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXLPLAD15KP36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 258A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| CDLL4959 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Part Status: Active |
товару немає в наявності |
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| JANS2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANSF2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JAN2N4449UA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN2N4449UB | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UB Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 400 mW Grade: Military Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N4449UA | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N4449U | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: U Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 600 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANSP2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANSL2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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2N4449UA/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN2N4449UA | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UA Grade: Military Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN2N4449UB/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: UB Grade: Military Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 400 mW Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N4449U/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: U Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 600 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JANSR2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANSD2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JANSM2N4449 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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PIC16LF18877-E/ML | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 44QFN Packaging: Tube Package / Case: 44-VQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-QFN (8x8) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF18877-E/P | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 40DIP Packaging: Tube Package / Case: 40-DIP (0.600", 15.24mm) Mounting Type: Through Hole Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 40-PDIP Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF18877-E/PT | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 44TQFP Packaging: Tray Package / Case: 44-TQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF18877-I/P | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 40DIP Packaging: Tube Package / Case: 40-DIP (0.600", 15.24mm) Mounting Type: Through Hole Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 40-PDIP Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF18877T-I/PT | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 44TQFP Packaging: Tape & Reel (TR) Package / Case: 44-TQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 44-TQFP (10x10) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PIC16LF18877T-I/ML | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 44QFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PIC16LF18877T-I/PTRA3 | Microchip Technology | Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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PIC16LF18877T-I/MV | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 40UQFN Packaging: Tape & Reel (TR) Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 40-UQFN (5x5) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PIC16LF18877T-I/PTC01 | Microchip Technology |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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PIC16LF18877-E/MV | Microchip Technology |
Description: IC MCU 8BIT 56KB FLASH 40UQFN Packaging: Tube Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 56KB (32K x 14) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 256 x 8 Core Processor: PIC Data Converters: A/D 35x10b; D/A 1x5b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 40-UQFN (5x5) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SY75602BTWL-TR | Microchip Technology |
Description: IC CLK BUFFER 1:2 250MHZ 8VDFN Packaging: Tape & Reel (TR) Package / Case: 8-VFDFN Number of Circuits: 1 Mounting Type: Surface Mount, Wettable Flank Output: HCSL Type: Clock Buffer Input: HCSL Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V Ratio - Input:Output: 1:2 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-VDFN (1.6x1.4) Frequency - Max: 250 MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SY75602BTWL-TR | Microchip Technology |
Description: IC CLK BUFFER 1:2 250MHZ 8VDFN Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Number of Circuits: 1 Mounting Type: Surface Mount, Wettable Flank Output: HCSL Type: Clock Buffer Input: HCSL Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V Ratio - Input:Output: 1:2 Differential - Input:Output: Yes/Yes Supplier Device Package: 8-VDFN (1.6x1.4) Frequency - Max: 250 MHz |
на замовлення 1269 шт: термін постачання 21-31 дні (днів) |
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.jpg "MXSMLJ6.0A") |
MXSMLJ6.0A | Microchip Technology |
Description: TVS DIODE 6VWM 10.3VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| APT5020BNFR | Microchip Technology |
Description: MOSFET N-CH 500V 28A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| APT5020BN | Microchip Technology |
Description: MOSFET N-CH 500V 28A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| JAN2N2369AU | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: 6-CLCC Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Supplier Device Package: 6-LCC Part Status: Active Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
 |
1N4734AGE3 | Microchip Technology |
Description: DIODE ZENER 5.6V 1W DO204AL Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N4734AGE3/TR | Microchip Technology |
Description: DIODE ZENER 5.6V 1W DO204AL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
 |
1N4734AUR-1/TR | Microchip Technology |
Description: DIODE ZENER 5.6V 1W DO213AB Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N4734AUR-1 | Microchip Technology |
Description: DIODE ZENER 5.6V 1W DO213AB Tolerance: ±5% Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. |
| JAN1N6049A |
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 37.5VC DO13
Description: TVS DIODE 22VWM 37.5VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6040A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Description: TVS DIODE 9VWM 15.6VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6043A |
Виробник: Microchip Technology
Description: TVS DIODE 12VWM 21.2VC DO13
Description: TVS DIODE 12VWM 21.2VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6042A |
Виробник: Microchip Technology
Description: TVS DIODE 11VWM 18.2VC DO13
Description: TVS DIODE 11VWM 18.2VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6048A |
Виробник: Microchip Technology
Description: TVS DIODE 20VWM 33.2VC DO13
Description: TVS DIODE 20VWM 33.2VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6049A |
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 37.5VC DO13
Description: TVS DIODE 22VWM 37.5VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6040A |
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Description: TVS DIODE 9VWM 15.6VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6046A |
Виробник: Microchip Technology
Description: TVS DIODE 17VWM 27.7VC DO13
Description: TVS DIODE 17VWM 27.7VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| 1N6048A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 20VWM 33.2VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 20VWM 33.2VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 45A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N6049A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 37.5VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 22VWM 37.5VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N6047A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 18VWM 30.6VC DO13
Description: TVS DIODE 18VWM 30.6VC DO13
товару немає в наявності
В кошику
од. на суму грн.
| 1N6040A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 9VWM 15.6VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 9VWM 15.6VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 96A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N6041A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 16.7VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10VWM 16.7VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 90A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 16.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 1N6044A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 22.5VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 13VWM 22.5VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| GC2530-30 |
Виробник: Microchip Technology
Description: SI SRD HERMETIC PILL
Description: SI SRD HERMETIC PILL
товару немає в наявності
В кошику
од. на суму грн.
| MAPLAD15KP10Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 10VWM 17VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 882A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10VWM 17VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 882A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD7.5KP36A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MPLAD7.5KP36A/TR |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC MINIPLAD
Packaging: Cut Tape (CT)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 129A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Mini-PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 7500W (7.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
на замовлення 200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 441.37 грн |
| MXLPLAD15KP36A |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 258A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 58.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 258A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MXL15KP36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| MA15KP36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 59.7VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 59.7VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MX15KP36A |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Description: TVS DIODE 36VWM 59.7VC CASE 5A
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| MX15KP36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 59.7VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 59.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
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| MXLPLAD15KP36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 258A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 36VWM 58.1VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 258A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Part Status: Active
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| JANS2N4449 |
Виробник: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| JANSF2N4449 |
Виробник: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| JAN2N4449UA/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| JAN2N4449UB |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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| 2N4449UA |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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| 2N4449U |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: U
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: U
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
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| JANSP2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| JANSL2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| 2N4449UA/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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| JAN2N4449UA |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/317
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UA
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/317
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| JAN2N4449UB/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/317
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: UB
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/317
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| 2N4449U/TR |
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: U
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: U
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 600 mW
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| JANSR2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| JANSD2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| JANSM2N4449 |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
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| PIC16LF18877-E/ML |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 44QFN
Packaging: Tube
Package / Case: 44-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 44QFN
Packaging: Tube
Package / Case: 44-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-QFN (8x8)
Number of I/O: 36
DigiKey Programmable: Not Verified
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| PIC16LF18877-E/P |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 36
DigiKey Programmable: Not Verified
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| PIC16LF18877-E/PT |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 44TQFP
Packaging: Tray
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
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| PIC16LF18877-I/P |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-PDIP
Number of I/O: 36
DigiKey Programmable: Not Verified
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| PIC16LF18877T-I/PT |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 44TQFP
Packaging: Tape & Reel (TR)
Package / Case: 44-TQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 44-TQFP (10x10)
Number of I/O: 36
DigiKey Programmable: Not Verified
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| PIC16LF18877T-I/ML |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 44QFN
Description: IC MCU 8BIT 56KB FLASH 44QFN
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| PIC16LF18877T-I/PTRA3 |
Виробник: Microchip Technology
Description: IC
Description: IC
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| PIC16LF18877T-I/MV |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 40UQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-UQFN (5x5)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 40UQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-UQFN (5x5)
Number of I/O: 36
DigiKey Programmable: Not Verified
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| PIC16LF18877T-I/PTC01 |
|
Виробник: Microchip Technology
Description: IC
Description: IC
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| PIC16LF18877-E/MV |
|
Виробник: Microchip Technology
Description: IC MCU 8BIT 56KB FLASH 40UQFN
Packaging: Tube
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-UQFN (5x5)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 56KB FLASH 40UQFN
Packaging: Tube
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 56KB (32K x 14)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 35x10b; D/A 1x5b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 40-UQFN (5x5)
Number of I/O: 36
DigiKey Programmable: Not Verified
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| SY75602BTWL-TR |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:2 250MHZ 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN
Number of Circuits: 1
Mounting Type: Surface Mount, Wettable Flank
Output: HCSL
Type: Clock Buffer
Input: HCSL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-VDFN (1.6x1.4)
Frequency - Max: 250 MHz
Description: IC CLK BUFFER 1:2 250MHZ 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN
Number of Circuits: 1
Mounting Type: Surface Mount, Wettable Flank
Output: HCSL
Type: Clock Buffer
Input: HCSL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-VDFN (1.6x1.4)
Frequency - Max: 250 MHz
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| SY75602BTWL-TR |
Виробник: Microchip Technology
Description: IC CLK BUFFER 1:2 250MHZ 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN
Number of Circuits: 1
Mounting Type: Surface Mount, Wettable Flank
Output: HCSL
Type: Clock Buffer
Input: HCSL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-VDFN (1.6x1.4)
Frequency - Max: 250 MHz
Description: IC CLK BUFFER 1:2 250MHZ 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN
Number of Circuits: 1
Mounting Type: Surface Mount, Wettable Flank
Output: HCSL
Type: Clock Buffer
Input: HCSL
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.62V ~ 1.98V, 2.25V ~ 2.75V, 2.97V ~ 3.63V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 8-VDFN (1.6x1.4)
Frequency - Max: 250 MHz
на замовлення 1269 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.17 грн |
| 25+ | 110.34 грн |
| 100+ | 106.23 грн |
| MXSMLJ6.0A |
|
Виробник: Microchip Technology
Description: TVS DIODE 6VWM 10.3VC DO214AB
Description: TVS DIODE 6VWM 10.3VC DO214AB
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| APT5020BNFR |
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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| APT5020BN |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: MOSFET N-CH 500V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 14A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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| JAN2N2369AU |
Виробник: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-CLCC
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: 6-LCC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: 6-CLCC
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Supplier Device Package: 6-LCC
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 500 mW
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| 1N4734AGE3 |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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| 1N4734AGE3/TR |
|
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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| 1N4734AUR-1/TR |
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 1W DO213AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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| 1N4734AUR-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 5.6V 1W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 1W DO213AB
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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