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dsPIC33EP128GS806T-I/PT dsPIC33EP128GS806T-I/PT Microchip Technology dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf Description: IC MCU 16BIT 128KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 70 MIPs
Program Memory Size: 128KB (43K x 24)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 22x12b; D/A 2x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1805 шт:
термін постачання 21-31 дні (днів)
1+563.86 грн
25+497.44 грн
100+450.80 грн
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dsPIC33EP64GS805T-I/PT dsPIC33EP64GS805T-I/PT Microchip Technology dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 70 MIPs
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 17x12b; D/A 1x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 33
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1600+430.75 грн
Мінімальне замовлення: 1600
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dsPIC33EP64GS805T-I/PT dsPIC33EP64GS805T-I/PT Microchip Technology dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 70 MIPs
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 17x12b; D/A 1x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 33
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+518.52 грн
25+456.57 грн
100+414.80 грн
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EV21H18A EV21H18A Microchip Technology SAMA7G54-EK-User%27s-Guide-DS50003273.pdf Description: SAMA7G54 EVALUATION KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MPU
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-A7
Utilized IC / Part: SAMA7G54
Platform: SAMA7G54 Eval Kit
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+28056.05 грн
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JANSD2N2218A JANSD2N2218A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSM2N2218AL JANSM2N2218AL Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSP2N2218 JANSP2N2218 Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSH2N2218A JANSH2N2218A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSL2N2218A JANSL2N2218A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSD2N2218 JANSD2N2218 Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSH2N2218AL JANSH2N2218AL Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSM2N2218 JANSM2N2218 Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSM2N2218A JANSM2N2218A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSL2N2218AL JANSL2N2218AL Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANS2N2218 JANS2N2218 Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANSP2N2218A JANSP2N2218A Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSD2N2218AL JANSD2N2218AL Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSP2N2218AL JANSP2N2218AL Microchip Technology Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANS2N2218A JANS2N2218A Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANS2N2218AL JANS2N2218AL Microchip Technology Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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1N5532B/TR 1N5532B/TR Microchip Technology 123956-lds-0037-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
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1N5532D 1N5532D Microchip Technology 123956-lds-0037-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
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FBP-AVR-DA-IEC61508 FBP-AVR-DA-IEC61508 Microchip Technology Description: IEC61508 FUNC SAFETY BASIC
Packaging: Electronic Delivery
Type: License
Applications: Safety, Industrial
Utilized IC / Part: AVR DA
Edition: Basic
Media Delivery Type: Electronically Delivered
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+72013.05 грн
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JANS1N6124A Microchip Technology Description: TVS DIODE 42.6VWM 77VC B SQ-MELF
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JANS1N6127 Microchip Technology Description: TVS DIODE 56VWM 103.1VC SQ-MELF
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AT90S4414-8JI AT90S4414-8JI Microchip Technology AT90S4414.pdf Description: IC MCU 8BIT 4KB FLASH 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 4KB (2K x 16)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of I/O: 32
DigiKey Programmable: Not Verified
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MIC61300-10YML-TR MIC61300-10YML-TR Microchip Technology mic61300.pdf Description: IC REG LINEAR 1V 3A 10MLF
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad, 10-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 3.6V
Number of Regulators: 1
Supplier Device Package: 10-MLF® (3x3)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.35V @ 3A
Protection Features: Over Current, Over Temperature
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1N5306E3 1N5306E3 Microchip Technology 150_Mx5283%20thru%205314%2C%20Ct5283%20thru%20Ct5314.pdf Description: DIODE CUR REG 100V 2.42MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.42mA
Voltage - Limiting (Max): 1.95V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+1328.03 грн
100+1187.50 грн
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JANKCA1N5303 JANKCA1N5303 Microchip Technology Description: DIODE GEN PURP 100V 1.76A DO7
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JANKCA1N5308 JANKCA1N5308 Microchip Technology Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
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JANHCA1N5304 JANHCA1N5304 Microchip Technology 14809-military-qualified-die-chip Description: DIODE CUR REG 100V 1.98MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.98mA
Voltage - Limiting (Max): 1.75V
Qualification: MIL-PRF-19500/463
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JANKCA1N5304 JANKCA1N5304 Microchip Technology Description: DIODE CUR REG 100V 1.98MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.98mA
Voltage - Limiting (Max): 1.75V
Qualification: MIL-PRF-19500/463
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JANKCA1N5301 JANKCA1N5301 Microchip Technology Description: DIODE GEN PURP 100V 1.54A DO7
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JANHCA1N5302 JANHCA1N5302 Microchip Technology 14809-military-qualified-die-chip Description: DIODE GEN PURP 100V 1.65A DO7
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JANKCA1N5302 JANKCA1N5302 Microchip Technology Description: DIODE GEN PURP 100V 1.65A DO7
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JANKCA1N5307 JANKCA1N5307 Microchip Technology Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
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JANHCA1N5301 JANHCA1N5301 Microchip Technology 14809-military-qualified-die-chip Description: DIODE GEN PURP 100V 1.54A DO7
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JANKCA1N5300 JANKCA1N5300 Microchip Technology Description: CURRENT REGULATOR
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JANHCA1N5300 JANHCA1N5300 Microchip Technology 14809-military-qualified-die-chip Description: DIODE GEN PURP 100V 1.43A DO7
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JANHCA1N5307 JANHCA1N5307 Microchip Technology 14809-military-qualified-die-chip Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
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JANHCA1N5308 JANHCA1N5308 Microchip Technology 14809-military-qualified-die-chip Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
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JANKCA1N5309 JANKCA1N5309 Microchip Technology Description: DIODE CUR REG 100V 3.3MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.3mA
Voltage - Limiting (Max): 2.25V
Grade: Military
Qualification: MIL-PRF-19500/463
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JANHCA1N5303 JANHCA1N5303 Microchip Technology 14809-military-qualified-die-chip Description: DIODE GEN PURP 100V 1.76A DO7
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JANHCA1N5309 JANHCA1N5309 Microchip Technology 14809-military-qualified-die-chip Description: DIODE CUR REG 100V 3.3MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.3mA
Voltage - Limiting (Max): 2.25V
Grade: Military
Qualification: MIL-PRF-19500/463
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JAN1N5308-1/TR JAN1N5308-1/TR Microchip Technology Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
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1N5306E3/TR 1N5306E3/TR Microchip Technology Description: DIODE CUR REG 100V 2.42MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Obsolete
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.42mA
Voltage - Limiting (Max): 1.95V
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1N5306E3/TR 1N5306E3/TR Microchip Technology Description: DIODE CUR REG 100V 2.42MA 500MW
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Obsolete
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.42mA
Voltage - Limiting (Max): 1.95V
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JANTXV1N5301UR-1/TR JANTXV1N5301UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 1.54MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.54mA
Voltage - Limiting (Max): 1.55V
Grade: Military
Qualification: MIL-PRF-19500/463
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JAN1N5301UR-1/TR JAN1N5301UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 1.54MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.54mA
Voltage - Limiting (Max): 1.55V
Grade: Military
Qualification: MIL-PRF-19500/463
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JAN1N5300-1/TR JAN1N5300-1/TR Microchip Technology Description: CURRENT REGULATOR
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JANTX1N5307-1/TR JANTX1N5307-1/TR Microchip Technology Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
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JANTX1N5304UR-1/TR JANTX1N5304UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 1.98MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.98mA
Voltage - Limiting (Max): 1.75V
Grade: Military
Qualification: MIL-PRF-19500/463
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1N5309-1E3/TR 1N5309-1E3/TR Microchip Technology Description: DIODE CUR REG 100V 3.3MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.3mA
Voltage - Limiting (Max): 2.25V
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1N5309-1 1N5309-1 Microchip Technology Description: DIODE CUR REG 100V 3.3MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.3mA
Voltage - Limiting (Max): 2.25V
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JANTXV1N5308UR-1/TR JANTXV1N5308UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
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1N5301UR-1 1N5301UR-1 Microchip Technology 5849-1n5283ur-1n5314ur-datasheet Description: DIODE CUR REG 100V 1.54MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.54mA
Voltage - Limiting (Max): 1.55V
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JANS1N5303UR-1 JANS1N5303UR-1 Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
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JAN1N5302UR-1/TR JAN1N5302UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: CURRENT REGULATOR
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1N5300UR-1/TR 1N5300UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: CURRENT REGULATOR
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JANTXV1N5303UR-1/TR JANTXV1N5303UR-1/TR Microchip Technology 123508-lds-0160-pdf Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
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dsPIC33EP128GS806T-I/PT dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf
dsPIC33EP128GS806T-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 128KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 70 MIPs
Program Memory Size: 128KB (43K x 24)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 22x12b; D/A 2x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1805 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+563.86 грн
25+497.44 грн
100+450.80 грн
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dsPIC33EP64GS805T-I/PT dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf
dsPIC33EP64GS805T-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 70 MIPs
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 17x12b; D/A 1x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 33
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1600+430.75 грн
Мінімальне замовлення: 1600
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dsPIC33EP64GS805T-I/PT dsPIC33EPXXXGS70X-80X-Family-Data-Sheet-DS70005258C.pdf
dsPIC33EP64GS805T-I/PT
Виробник: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 48TQFP
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP
Mounting Type: Surface Mount
Speed: 70 MIPs
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 17x12b; D/A 1x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Part Status: Active
Number of I/O: 33
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+518.52 грн
25+456.57 грн
100+414.80 грн
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EV21H18A SAMA7G54-EK-User%27s-Guide-DS50003273.pdf
EV21H18A
Виробник: Microchip Technology
Description: SAMA7G54 EVALUATION KIT
Packaging: Bulk
Mounting Type: Fixed
Type: MPU
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-A7
Utilized IC / Part: SAMA7G54
Platform: SAMA7G54 Eval Kit
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+28056.05 грн
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JANSD2N2218A
JANSD2N2218A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSM2N2218AL
JANSM2N2218AL
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSP2N2218
JANSP2N2218
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSH2N2218A
JANSH2N2218A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSL2N2218A
JANSL2N2218A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSD2N2218
JANSD2N2218
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSH2N2218AL
JANSH2N2218AL
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
товару немає в наявності
В кошику  од. на суму  грн.
JANSM2N2218
JANSM2N2218
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSM2N2218A
JANSM2N2218A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSL2N2218AL
JANSL2N2218AL
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANS2N2218
JANS2N2218
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANSP2N2218A
JANSP2N2218A
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSD2N2218AL
JANSD2N2218AL
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANSP2N2218AL
JANSP2N2218AL
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
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JANS2N2218A
JANS2N2218A
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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JANS2N2218AL
JANS2N2218AL
Виробник: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
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1N5532B/TR 123956-lds-0037-1.pdf
1N5532B/TR
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
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1N5532D 123956-lds-0037-1.pdf
1N5532D
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
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FBP-AVR-DA-IEC61508
FBP-AVR-DA-IEC61508
Виробник: Microchip Technology
Description: IEC61508 FUNC SAFETY BASIC
Packaging: Electronic Delivery
Type: License
Applications: Safety, Industrial
Utilized IC / Part: AVR DA
Edition: Basic
Media Delivery Type: Electronically Delivered
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+72013.05 грн
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JANS1N6124A
Виробник: Microchip Technology
Description: TVS DIODE 42.6VWM 77VC B SQ-MELF
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JANS1N6127
Виробник: Microchip Technology
Description: TVS DIODE 56VWM 103.1VC SQ-MELF
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AT90S4414-8JI AT90S4414.pdf
AT90S4414-8JI
Виробник: Microchip Technology
Description: IC MCU 8BIT 4KB FLASH 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 4KB (2K x 16)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: AVR
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: 44-PLCC (16.6x16.6)
Number of I/O: 32
DigiKey Programmable: Not Verified
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MIC61300-10YML-TR mic61300.pdf
MIC61300-10YML-TR
Виробник: Microchip Technology
Description: IC REG LINEAR 1V 3A 10MLF
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad, 10-MLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 3.6V
Number of Regulators: 1
Supplier Device Package: 10-MLF® (3x3)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.35V @ 3A
Protection Features: Over Current, Over Temperature
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1N5306E3 150_Mx5283%20thru%205314%2C%20Ct5283%20thru%20Ct5314.pdf
1N5306E3
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.42MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.42mA
Voltage - Limiting (Max): 1.95V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1328.03 грн
100+1187.50 грн
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JANKCA1N5303
JANKCA1N5303
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1.76A DO7
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JANKCA1N5308
JANKCA1N5308
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
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JANHCA1N5304 14809-military-qualified-die-chip
JANHCA1N5304
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.98MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.98mA
Voltage - Limiting (Max): 1.75V
Qualification: MIL-PRF-19500/463
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JANKCA1N5304
JANKCA1N5304
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.98MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.98mA
Voltage - Limiting (Max): 1.75V
Qualification: MIL-PRF-19500/463
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JANKCA1N5301
JANKCA1N5301
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1.54A DO7
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JANHCA1N5302 14809-military-qualified-die-chip
JANHCA1N5302
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1.65A DO7
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JANKCA1N5302
JANKCA1N5302
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1.65A DO7
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JANKCA1N5307
JANKCA1N5307
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
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JANHCA1N5301 14809-military-qualified-die-chip
JANHCA1N5301
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1.54A DO7
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JANKCA1N5300
JANKCA1N5300
Виробник: Microchip Technology
Description: CURRENT REGULATOR
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JANHCA1N5300 14809-military-qualified-die-chip
JANHCA1N5300
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1.43A DO7
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JANHCA1N5307 14809-military-qualified-die-chip
JANHCA1N5307
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
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JANHCA1N5308 14809-military-qualified-die-chip
JANHCA1N5308
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
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JANKCA1N5309
JANKCA1N5309
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 3.3MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.3mA
Voltage - Limiting (Max): 2.25V
Grade: Military
Qualification: MIL-PRF-19500/463
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JANHCA1N5303 14809-military-qualified-die-chip
JANHCA1N5303
Виробник: Microchip Technology
Description: DIODE GEN PURP 100V 1.76A DO7
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JANHCA1N5309 14809-military-qualified-die-chip
JANHCA1N5309
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 3.3MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.3mA
Voltage - Limiting (Max): 2.25V
Grade: Military
Qualification: MIL-PRF-19500/463
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JAN1N5308-1/TR
JAN1N5308-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
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1N5306E3/TR
1N5306E3/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.42MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Obsolete
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.42mA
Voltage - Limiting (Max): 1.95V
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1N5306E3/TR
1N5306E3/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.42MA 500MW
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Obsolete
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.42mA
Voltage - Limiting (Max): 1.95V
товару немає в наявності
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JANTXV1N5301UR-1/TR 123508-lds-0160-pdf
JANTXV1N5301UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.54MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.54mA
Voltage - Limiting (Max): 1.55V
Grade: Military
Qualification: MIL-PRF-19500/463
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JAN1N5301UR-1/TR 123508-lds-0160-pdf
JAN1N5301UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.54MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.54mA
Voltage - Limiting (Max): 1.55V
Grade: Military
Qualification: MIL-PRF-19500/463
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JAN1N5300-1/TR
JAN1N5300-1/TR
Виробник: Microchip Technology
Description: CURRENT REGULATOR
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JANTX1N5307-1/TR
JANTX1N5307-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.64MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.64mA
Voltage - Limiting (Max): 2V
Grade: Military
Qualification: MIL-PRF-19500/463
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JANTX1N5304UR-1/TR 123508-lds-0160-pdf
JANTX1N5304UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.98MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.98mA
Voltage - Limiting (Max): 1.75V
Grade: Military
Qualification: MIL-PRF-19500/463
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1N5309-1E3/TR
1N5309-1E3/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 3.3MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.3mA
Voltage - Limiting (Max): 2.25V
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1N5309-1
1N5309-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 3.3MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 3.3mA
Voltage - Limiting (Max): 2.25V
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JANTXV1N5308UR-1/TR 123508-lds-0160-pdf
JANTXV1N5308UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
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1N5301UR-1 5849-1n5283ur-1n5314ur-datasheet
1N5301UR-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.54MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.54mA
Voltage - Limiting (Max): 1.55V
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JANS1N5303UR-1 123508-lds-0160-pdf
JANS1N5303UR-1
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
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JAN1N5302UR-1/TR 123508-lds-0160-pdf
JAN1N5302UR-1/TR
Виробник: Microchip Technology
Description: CURRENT REGULATOR
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1N5300UR-1/TR 123508-lds-0160-pdf
1N5300UR-1/TR
Виробник: Microchip Technology
Description: CURRENT REGULATOR
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JANTXV1N5303UR-1/TR 123508-lds-0160-pdf
JANTXV1N5303UR-1/TR
Виробник: Microchip Technology
Description: DIODE CUR REG 100V 1.76MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 1.76mA
Voltage - Limiting (Max): 1.65V
Qualification: MIL-PRF-19500/463
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