Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (359226) > Сторінка 1565 з 5988
| Фото | Назва | Виробник | Інформація |
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MCP6567AT-E/UN | Microchip Technology |
 Description: IC COMP DUAL 1.8V OD 10MSOPPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MCP6567AT-E/MF | Microchip Technology |
Description: IC COMP DUAL 1.8V OD 10DFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MCP6567A-E/MF | Microchip Technology |
Description: IC COMP DUAL 1.8V OD 10DFN Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CDLL4473/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 17.6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TC51N2202ECBTR | Microchip Technology |
Description: IC SUPERVISOR 1 CHANNEL SOT23A-3 |
на замовлення 3041 шт: термін постачання 21-31 дні (днів) |
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1N914UR-1/TR | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO213AA Packaging: Tape & Reel (TR) Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MNS1N5822US | Microchip Technology |
Description: DIODE SCHOTTKY 40V 3A B SQMELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 125°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Qualification: MIL-PRF-19500/620 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| JAN1N2844B | Microchip Technology |
Description: ZENER DIODE Tolerance: ±5% Packaging: Bulk Package / Case: TO-204AD Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 160 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: TO-204AD (TO-3) Grade: Military Part Status: Active Power - Max: 10 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 121.6 V Qualification: MIL-PRF-19500/114 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MX553NBF155M520-TR | Microchip Technology |
Description: XTAL OSC XO 155.5200MHZ LVPECL Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 2.375V ~ 3.63V Current - Supply (Max): 120mA Height - Seated (Max): 0.055" (1.40mm) Frequency: 155.52 MHz Base Resonator: Crystal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| MX553NBF155M520 | Microchip Technology |
Description: XTAL OSC XO 155.5200MHZ LVPECL Packaging: Tube Package / Case: 6-SMD, No Lead Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm) Mounting Type: Surface Mount Output: LVPECL Function: Enable/Disable Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±50ppm Voltage - Supply: 2.375V ~ 3.63V Current - Supply (Max): 120mA Height - Seated (Max): 0.055" (1.40mm) Frequency: 155.52 MHz Base Resonator: Crystal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANKCBL2N3440 | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANSM2N3440L | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANSD2N3440L | Microchip Technology |
Description: RH POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
.jpg "MXLSMCJ36A") |
MXLSMCJ36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MXLSMCJ36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MASMCJ36Ae3 | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
.jpg "MXSMCJ36A") |
MXSMCJ36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MASMCJ36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.8A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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LND150N3-G-P014 | Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
на замовлення 1924 шт: термін постачання 21-31 дні (днів) |
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LND150N3-G-P014 | Microchip Technology |
Description: MOSFET N-CH 500V 30MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 30mA (Tj) Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V Power Dissipation (Max): 740mW (Ta) Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANS1N6621 | Microchip Technology |
Description: DIODE GEN PURP 400V 2A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6627US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6623US | Microchip Technology |
Description: DIODE GEN PURP 880V 1A D5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6623US/TR | Microchip Technology |
Description: RECTIFIER UFR,FRR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N6623/TR | Microchip Technology |
Description: RECTIFIER UFR,FRR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N6622US/TR | Microchip Technology |
Description: DIODE GEN PURP 660V 2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 660 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N6627US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANS1N6621/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 2A A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N6620U | Microchip Technology | Description: DIODE GEN PURP 200V 1.2A A-MELF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6628US | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JAN1N6623US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTXV1N6621US/TR | Microchip Technology |
Description: DIODE GEN PURP 440V 1.2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 1.2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 440 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 440 V Qualification: MIL-PRF-19500/585 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N6620US/TR | Microchip Technology |
Description: DIODE GEN PURP 220V 2A D-5A Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| 1N6620E3/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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JANTX1N6627U/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N6628US/TR | Microchip Technology |
Description: DIODE GEN PURP 660V 1.75A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 10V, 1MHz Current - Average Rectified (Io): 1.75A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C Grade: Military Voltage - DC Reverse (Vr) (Max): 660 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 660 V Qualification: MIL-PRF-19500/590 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N6627US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N6620/TR | Microchip Technology |
Description: DIODE GEN PURP 220V 2A AXIAL Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 10V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 220 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Current - Reverse Leakage @ Vr: 500 nA @ 220 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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JANTX1N6623US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ70A | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO214AB |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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MSMLJ54A | Microchip Technology |
Description: TVS DIODE 54VWM 87.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 34.4A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ64CAe3 | Microchip Technology |
Description: TVS DIODE 64VWM 103VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ43CA | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ5.0CAe3 | Microchip Technology |
Description: TVS DIODE 5VWM 9.2VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ43Ae3 | Microchip Technology |
Description: TVS DIODE 43VWM 69.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 43.2A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ28CAe3 | Microchip Technology |
Description: TVS DIODE 28VWM 45.4VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ7.5A | Microchip Technology |
Description: TVS DIODE 7.5VWM 12.9VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 232.6A Voltage - Reverse Standoff (Typ): 7.5V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 12.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ7.0Ae3 | Microchip Technology |
Description: TVS DIODE 7VWM 12VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 250A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ7.0CAe3 | Microchip Technology |
Description: TVS DIODE 7VWM 12VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ70Ae3 | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.6A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ6.5CAE3 | Microchip Technology |
Description: TVS DIODE 6.5VWM 11.2VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ64Ae3 | Microchip Technology |
Description: TVS DIODE 64VWM 103VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 29.2A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ64CA | Microchip Technology |
Description: TVS DIODE 64VWM 103VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ6.5CA | Microchip Technology |
Description: TVS DIODE 6.5VWM 11.2VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ70CA | Microchip Technology |
Description: TVS DIODE 70VWM 113VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ22Ae3 | Microchip Technology |
Description: TVS DIODE 22VWM 35.5VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 84.4A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ26A | Microchip Technology |
Description: TVS DIODE 26VWM 42.1VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71.2A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ60CA | Microchip Technology |
Description: TVS DIODE 60VWM 96.8VC DO214AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ58CAE3 | Microchip Technology |
Description: TVS DIODE 58VWM 93.6VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 32A Voltage - Reverse Standoff (Typ): 58V Supplier Device Package: DO-214AB Bidirectional Channels: 1 Voltage - Breakdown (Min): 64.4V Voltage - Clamping (Max) @ Ipp: 93.6V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MSMLJ45A | Microchip Technology |
Description: TVS DIODE 45VWM 72.7VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 41.2A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
товару немає в наявності |
В кошику од. на суму грн. |
| CDLL4473/TR |
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 17.6 V
Description: VOLTAGE REGULATOR
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 17.6 V
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В кошику
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| TC51N2202ECBTR |
|
Виробник: Microchip Technology
Description: IC SUPERVISOR 1 CHANNEL SOT23A-3
Description: IC SUPERVISOR 1 CHANNEL SOT23A-3
на замовлення 3041 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 129.60 грн |
| 25+ | 103.84 грн |
| 100+ | 95.09 грн |
| 1N914UR-1/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Description: DIODE GEN PURP 75V 200MA DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
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| MNS1N5822US |
|
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: MIL-PRF-19500/620
Description: DIODE SCHOTTKY 40V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: MIL-PRF-19500/620
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В кошику
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| JAN1N2844B |
Виробник: Microchip Technology
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-204AD (TO-3)
Grade: Military
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 121.6 V
Qualification: MIL-PRF-19500/114
Description: ZENER DIODE
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-204AD
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-204AD (TO-3)
Grade: Military
Part Status: Active
Power - Max: 10 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 121.6 V
Qualification: MIL-PRF-19500/114
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В кошику
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| MX553NBF155M520-TR |
|
Виробник: Microchip Technology
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
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| MX553NBF155M520 |
|
Виробник: Microchip Technology
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tube
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
Description: XTAL OSC XO 155.5200MHZ LVPECL
Packaging: Tube
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Mounting Type: Surface Mount
Output: LVPECL
Function: Enable/Disable
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.375V ~ 3.63V
Current - Supply (Max): 120mA
Height - Seated (Max): 0.055" (1.40mm)
Frequency: 155.52 MHz
Base Resonator: Crystal
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В кошику
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| JANKCBL2N3440 |
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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| JANSM2N3440L |
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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| JANSD2N3440L |
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
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В кошику
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| MXLSMCJ36A |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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В кошику
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| MXLSMCJ36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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В кошику
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| MASMCJ36Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| MXSMCJ36A |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Description: TVS DIODE 36VWM 58.1VC DO214AB
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| MASMCJ36A |
|
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
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| LND150N3-G-P014 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
на замовлення 1924 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.30 грн |
| 25+ | 37.55 грн |
| LND150N3-G-P014 |
|
Виробник: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| JANS1N6621 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6627US/TR |
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6623US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 880V 1A D5A
Description: DIODE GEN PURP 880V 1A D5A
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6623US/TR |
|
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6623/TR |
|
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6622US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Description: DIODE GEN PURP 660V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6627US/TR |
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
товару немає в наявності
В кошику
од. на суму грн.
| JANS1N6621/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Description: DIODE GEN PURP 400V 2A A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6620U |
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1.2A A-MELF
Description: DIODE GEN PURP 200V 1.2A A-MELF
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6628US |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
товару немає в наявності
В кошику
од. на суму грн.
| JAN1N6623US/TR |
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV1N6621US/TR |
|
Виробник: Microchip Technology
Description: DIODE GEN PURP 440V 1.2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
Description: DIODE GEN PURP 440V 1.2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 1.2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Qualification: MIL-PRF-19500/585
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6620US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A D-5A
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
товару немає в наявності
В кошику
од. на суму грн.
| 1N6620E3/TR |
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6627U/TR |
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6628US/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
Description: DIODE GEN PURP 660V 1.75A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Average Rectified (Io): 1.75A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 660 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 660 V
Qualification: MIL-PRF-19500/590
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6627US/TR |
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6620/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Description: DIODE GEN PURP 220V 2A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
товару немає в наявності
В кошику
од. на суму грн.
| JANTX1N6623US/TR |
Виробник: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
товару немає в наявності
В кошику
од. на суму грн.
| MSMLJ70A |
|
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Description: TVS DIODE 70VWM 113VC DO214AB
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 363.04 грн |
| MSMLJ54A |
|
Виробник: Microchip Technology
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 34.4A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MSMLJ64CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MSMLJ43CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
Description: TVS DIODE 43VWM 69.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MSMLJ5.0CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 5VWM 9.2VC DO214AB
Description: TVS DIODE 5VWM 9.2VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MSMLJ43Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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В кошику
од. на суму грн.
| MSMLJ28CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 28VWM 45.4VC DO214AB
Description: TVS DIODE 28VWM 45.4VC DO214AB
товару немає в наявності
В кошику
од. на суму грн.
| MSMLJ7.5A |
|
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232.6A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 7.5VWM 12.9VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 232.6A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MSMLJ7.0Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товару немає в наявності
В кошику
од. на суму грн.
| MSMLJ7.0CAe3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 7VWM 12VC DO214AB
Description: TVS DIODE 7VWM 12VC DO214AB
товару немає в наявності
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| MSMLJ70Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.6A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.6A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MSMLJ6.5CAE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
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| MSMLJ64Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.2A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 29.2A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MSMLJ64CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Description: TVS DIODE 64VWM 103VC DO214AB
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| MSMLJ6.5CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
Description: TVS DIODE 6.5VWM 11.2VC DO214AB
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| MSMLJ70CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Description: TVS DIODE 70VWM 113VC DO214AB
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| MSMLJ22Ae3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84.4A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MSMLJ26A |
|
Виробник: Microchip Technology
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71.2A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MSMLJ60CA |
|
Виробник: Microchip Technology
Description: TVS DIODE 60VWM 96.8VC DO214AB
Description: TVS DIODE 60VWM 96.8VC DO214AB
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| MSMLJ58CAE3 |
|
Виробник: Microchip Technology
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 58VWM 93.6VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 58V
Supplier Device Package: DO-214AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.4V
Voltage - Clamping (Max) @ Ipp: 93.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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| MSMLJ45A |
|
Виробник: Microchip Technology
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 41.2A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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