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MIC5327-1.8YMT-TR MIC5327-1.8YMT-TR Microchip Technology mic5327.pdf Description: IC REG LINEAR 1.8V 300MA 4TMLF
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad, 4-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-TMLF® (1.2x1.6)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB ~ 50dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
товар відсутній
MSMBJ5364BE3 Microchip Technology Description: VOLTAGE REGULATOR
товар відсутній
MSMBG5364B Microchip Technology Description: VOLTAGE REGULATOR
товар відсутній
MSMBG5364BE3 Microchip Technology Description: VOLTAGE REGULATOR
товар відсутній
MSMBJ5364BE3/TR Microchip Technology Description: VOLTAGE REGULATOR
товар відсутній
MSMBJ5364B Microchip Technology Description: VOLTAGE REGULATOR
товар відсутній
MSMBJ5364B/TR Microchip Technology Description: VOLTAGE REGULATOR
товар відсутній
CD5364B Microchip Technology 8375-cd5333b-cd5379b-datasheet Description: VOLTAGE REGULATOR
товар відсутній
JANS2N5151L JANS2N5151L Microchip Technology Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
JANSF2N5151L JANSF2N5151L Microchip Technology Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
JANTX2N5151L Microchip Technology 8945-lds-0132-datasheet Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
JANTXV2N5151L Microchip Technology 8945-lds-0132-datasheet Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
JAN2N5151L Microchip Technology 8945-lds-0132-datasheet Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
товар відсутній
JANSM2N5151L JANSM2N5151L Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
JANSP2N5151L JANSP2N5151L Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
JANSR2N5151L JANSR2N5151L Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
JANSL2N5151L JANSL2N5151L Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
JANSD2N5151L JANSD2N5151L Microchip Technology Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
2N5151L 2N5151L Microchip Technology 8945-lds-0132-datasheet Description: TRANS PNP 80V 2A TO5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
DSC2311KE2-R0090T Microchip Technology Description: MEMS CLOCK GEN DUAL OUTPUT
товар відсутній
DSC2311KI1-R0051T DSC2311KI1-R0051T Microchip Technology 20005611A.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL1-R0054 DSC2311KL1-R0054 Microchip Technology DSC2311KL1-R0054.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI2-R0057T DSC2311KI2-R0057T Microchip Technology DSC2311KI2-R0057.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI1-R0040 Microchip Technology Description: MEMS CLOCK GEN DUAL OUTPUT
товар відсутній
DSC2311KI1-R0053T DSC2311KI1-R0053T Microchip Technology DSC2311KI1-R0053.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KM1-R0002 DSC2311KM1-R0002 Microchip Technology DSC2311KM1-R0002.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KI1-R0054 DSC2311KI1-R0054 Microchip Technology DSC2311KI1-R0054.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL1-R0054T DSC2311KL1-R0054T Microchip Technology DSC2311KL1-R0054.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI2-R0055T DSC2311KI2-R0055T Microchip Technology DSC2311KI2-R0055.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI1-R0040T Microchip Technology Description: MEMS CLOCK GEN DUAL OUTPUT
товар відсутній
DSC2311KE2-R0016T DSC2311KE2-R0016T Microchip Technology DSC2311KE2-R0016.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KI2-R0016 DSC2311KI2-R0016 Microchip Technology DSC2311KI2-R0016.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL2-R0091T Microchip Technology Description: MEMS CLOCK GEN DUAL OUTPUT
товар відсутній
DSC2311KL2-R0048T DSC2311KL2-R0048T Microchip Technology DSC2311KL2-R0048.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KM2-R0050 DSC2311KM2-R0050 Microchip Technology DSC2311KM2-R0050.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL1-R0002T DSC2311KL1-R0002T Microchip Technology DSC2311KL1-R0002.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KE1-R0047 DSC2311KE1-R0047 Microchip Technology DSC2311KE1-R0047.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI2-R0008T DSC2311KI2-R0008T Microchip Technology DSC2311KI2-R0008.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KL2-R0048 DSC2311KL2-R0048 Microchip Technology DSC2311KL2-R0048.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KM2-R0002 DSC2311KM2-R0002 Microchip Technology 20005611A.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL2-R0002T DSC2311KL2-R0002T Microchip Technology DSC2311KL2-R0002.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KI1-R0054T DSC2311KI1-R0054T Microchip Technology DSC2311KI1-R0054.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI1-R0059T DSC2311KI1-R0059T Microchip Technology DSC2311KI1-R0059.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
MSMCJ30A/TR MSMCJ30A/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
DSC6001JI1B-460K800 DSC6001JI1B-460K800 Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULP LVCMOS -40C-85C 50P
товар відсутній
DSC6001JI1B-460K800T DSC6001JI1B-460K800T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULP LVCMOS -40C-85C 50P
товар відсутній
1N4759AP/TR8 1N4759AP/TR8 Microchip Technology 10911-sa5-33-datasheet Description: DIODE ZENER 62V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товар відсутній
1N4759AG/TR 1N4759AG/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товар відсутній
1N4759A 1N4759A Microchip Technology pdf.php?pn=1N4759A 1N4728A-1N4764A%20N0183%20REV.C.pdf Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товар відсутній
1N4759UR-1 1N4759UR-1 Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товар відсутній
AX500-PQ208I Microchip Technology index.php?option=com_docman&task=doc_download&gid=130669 Description: IC FPGA 115 I/O 208QFP
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
AX500-1PQ208I Microchip Technology index.php?option=com_docman&task=doc_download&gid=130669 Description: IC FPGA 115 I/O 208QFP
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
MNS1N5819UR-1 MNS1N5819UR-1 Microchip Technology Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
товар відсутній
MNS1N5819UR-1/TR MNS1N5819UR-1/TR Microchip Technology Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
товар відсутній
1N5913B/TR 1N5913B/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
1N5913BUR-1/TR 1N5913BUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
MSCSM120TAM31T3AG Microchip Technology MSCSM120TAM31T3AG-SiC-MOSFET-module-DS00004640.pdf Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
товар відсутній
MSCSM70HM19T3AG Microchip Technology MSCSM70HM19T3AG-SiC-MOSFET-module-DS00004607.pdf Description: SIC 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+13365 грн
MSCSM120AM08T3AG Microchip Technology MSCSM120AM08T3AG-SiC-MOSFET-module-DS00004574.pdf Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
товар відсутній
MSCSM120AM02T6LIAG Microchip Technology MSCSM120AM02T6LIAG-SiC-MOSFET-module-DS00004562.pdf Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
товар відсутній
MIC5327-1.8YMT-TR mic5327.pdf
MIC5327-1.8YMT-TR
Виробник: Microchip Technology
Description: IC REG LINEAR 1.8V 300MA 4TMLF
Packaging: Cut Tape (CT)
Package / Case: 4-UFDFN Exposed Pad, 4-TMLF®
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-TMLF® (1.2x1.6)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 60dB ~ 50dB (1kHz ~ 20kHz)
Voltage Dropout (Max): 0.3V @ 300mA
Protection Features: Over Current, Over Temperature
товар відсутній
MSMBJ5364BE3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товар відсутній
MSMBG5364B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товар відсутній
MSMBG5364BE3
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товар відсутній
MSMBJ5364BE3/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товар відсутній
MSMBJ5364B
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товар відсутній
MSMBJ5364B/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товар відсутній
CD5364B 8375-cd5333b-cd5379b-datasheet
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
товар відсутній
JANS2N5151L
JANS2N5151L
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
JANSF2N5151L
JANSF2N5151L
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
JANTX2N5151L 8945-lds-0132-datasheet
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
JANTXV2N5151L 8945-lds-0132-datasheet
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
JAN2N5151L 8945-lds-0132-datasheet
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
товар відсутній
JANSM2N5151L
JANSM2N5151L
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
JANSP2N5151L
JANSP2N5151L
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
JANSR2N5151L
JANSR2N5151L
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
JANSL2N5151L
JANSL2N5151L
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
JANSD2N5151L
JANSD2N5151L
Виробник: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
2N5151L 8945-lds-0132-datasheet
2N5151L
Виробник: Microchip Technology
Description: TRANS PNP 80V 2A TO5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/545
товар відсутній
DSC2311KE2-R0090T
Виробник: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
товар відсутній
DSC2311KI1-R0051T 20005611A.pdf
DSC2311KI1-R0051T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL1-R0054 DSC2311KL1-R0054.pdf
DSC2311KL1-R0054
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI2-R0057T DSC2311KI2-R0057.pdf
DSC2311KI2-R0057T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI1-R0040
Виробник: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
товар відсутній
DSC2311KI1-R0053T DSC2311KI1-R0053.pdf
DSC2311KI1-R0053T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KM1-R0002 DSC2311KM1-R0002.pdf
DSC2311KM1-R0002
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KI1-R0054 DSC2311KI1-R0054.pdf
DSC2311KI1-R0054
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL1-R0054T DSC2311KL1-R0054.pdf
DSC2311KL1-R0054T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI2-R0055T DSC2311KI2-R0055.pdf
DSC2311KI2-R0055T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI1-R0040T
Виробник: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
товар відсутній
DSC2311KE2-R0016T DSC2311KE2-R0016.pdf
DSC2311KE2-R0016T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KI2-R0016 DSC2311KI2-R0016.pdf
DSC2311KI2-R0016
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL2-R0091T
Виробник: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
товар відсутній
DSC2311KL2-R0048T DSC2311KL2-R0048.pdf
DSC2311KL2-R0048T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KM2-R0050 DSC2311KM2-R0050.pdf
DSC2311KM2-R0050
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL1-R0002T DSC2311KL1-R0002.pdf
DSC2311KL1-R0002T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KE1-R0047 DSC2311KE1-R0047.pdf
DSC2311KE1-R0047
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI2-R0008T DSC2311KI2-R0008.pdf
DSC2311KI2-R0008T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KL2-R0048 DSC2311KL2-R0048.pdf
DSC2311KL2-R0048
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KM2-R0002 20005611A.pdf
DSC2311KM2-R0002
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KL2-R0002T DSC2311KL2-R0002.pdf
DSC2311KL2-R0002T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
DSC2311KI1-R0054T DSC2311KI1-R0054.pdf
DSC2311KI1-R0054T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
товар відсутній
DSC2311KI1-R0059T DSC2311KI1-R0059.pdf
DSC2311KI1-R0059T
Виробник: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
товар відсутній
MSMCJ30A/TR 10561-msmc-datasheet
MSMCJ30A/TR
Виробник: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
DSC6001JI1B-460K800 DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001JI1B-460K800
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
товар відсутній
DSC6001JI1B-460K800T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001JI1B-460K800T
Виробник: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
товар відсутній
1N4759AP/TR8 10911-sa5-33-datasheet
1N4759AP/TR8
Виробник: Microchip Technology
Description: DIODE ZENER 62V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товар відсутній
1N4759AG/TR
1N4759AG/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товар відсутній
1N4759A pdf.php?pn=1N4759A 1N4728A-1N4764A%20N0183%20REV.C.pdf
1N4759A
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товар відсутній
1N4759UR-1
1N4759UR-1
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
товар відсутній
AX500-PQ208I index.php?option=com_docman&task=doc_download&gid=130669
Виробник: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
на замовлення 33 шт:
термін постачання 21-31 дні (днів)
AX500-1PQ208I index.php?option=com_docman&task=doc_download&gid=130669
Виробник: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
MNS1N5819UR-1
MNS1N5819UR-1
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
товар відсутній
MNS1N5819UR-1/TR
MNS1N5819UR-1/TR
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
товар відсутній
1N5913B/TR
1N5913B/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
1N5913BUR-1/TR
1N5913BUR-1/TR
Виробник: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
товар відсутній
MSCSM120TAM31T3AG MSCSM120TAM31T3AG-SiC-MOSFET-module-DS00004640.pdf
Виробник: Microchip Technology
Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
товар відсутній
MSCSM70HM19T3AG MSCSM70HM19T3AG-SiC-MOSFET-module-DS00004607.pdf
Виробник: Microchip Technology
Description: SIC 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+13365 грн
MSCSM120AM08T3AG MSCSM120AM08T3AG-SiC-MOSFET-module-DS00004574.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
товар відсутній
MSCSM120AM02T6LIAG MSCSM120AM02T6LIAG-SiC-MOSFET-module-DS00004562.pdf
Виробник: Microchip Technology
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
товар відсутній
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