Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (332352) > Сторінка 1613 з 5540
Фото | Назва | Виробник | Інформація |
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ATSAM4CMP32CB-AUTR | Microchip Technology | Description: TQFP, GREEN, IND, CRYPTO, MRLB, |
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JAN1N4249 | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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1N4249 | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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JAN1N4249/TR | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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1N4249US | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A MELF-1 Packaging: Bulk Package / Case: SQ-MELF Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: MELF-1 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
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JANTXV1N4249/TR | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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1N4249/TR | Microchip Technology |
Description: DIODE GEN PURP 1KV 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
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EMC1412-1-ACZL-TR | Microchip Technology |
Description: SENSOR DIGITAL -40C-125C 8TSSOP Features: One-Shot, Output Switch, Programmable Limit, Standby Mode Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 11 b Supplier Device Package: 8-TSSOP Test Condition: -5°C ~ 100°C (-40°C ~ 125°C) Accuracy - Highest (Lowest): ±1°C (±2°C) Sensing Temperature - Local: -40°C ~ 125°C Sensing Temperature - Remote: -64°C ~ 191°C |
на замовлення 9171 шт: термін постачання 21-31 дні (днів) |
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1N4500E3/TR | Microchip Technology | Description: DIODE GP REV 80V 300MA DO35 |
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1N4531UR-1 | Microchip Technology | Description: DIODE GEN PURP 75V 125MA DO213AA |
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1N4500E3 | Microchip Technology | Description: DIODE GEN PURP 80V 300MA DO35 |
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1N4529R | Microchip Technology |
Description: DIODE GEN PURP 1KV 40A DO5 Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 40A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
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1N4596R | Microchip Technology | Description: DIODE GP REV 1.4KV 150A DO205AA |
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1N4593R | Microchip Technology | Description: DIODE GP REV 800V 150A DO205AA |
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1N4590 | Microchip Technology | Description: DIODE GEN PURP 400V 150A DO205AA |
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1N4593 | Microchip Technology | Description: DIODE GEN PURP 800V 150A DO205AA |
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1N4591 | Microchip Technology | Description: DIODE GEN PURP 500V 150A DO205AA |
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1N459/TR | Microchip Technology |
Description: DIODE GP REV 200V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 (DO-204AH) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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1N4595R | Microchip Technology | Description: DIODE GP REV 1.2KV 150A DO205AA |
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1N4592R | Microchip Technology | Description: DIODE GP REV 600V 150A DO205AA |
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1N459 | Microchip Technology | Description: DIODE GEN PURP 200V 150MA DO35 |
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1N4592TS | Microchip Technology | Description: DIODE GEN PURP 600V 150A DO205AA |
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1N4591R | Microchip Technology | Description: DIODE GP REV 500V 150A DO205AA |
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1N4596 | Microchip Technology | Description: DIODE GP 1.4KV 150A DO205AA |
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1N4590R | Microchip Technology | Description: DIODE GP REV 400V 150A DO205AA |
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1N4595 | Microchip Technology | Description: DIODE GP 1.2KV 150A DO205AA |
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1N459AUR | Microchip Technology |
Description: DIODE GP 200V 150MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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1N459A/TR | Microchip Technology |
Description: DIODE GP REV 200V 150MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard, Reverse Polarity Current - Average Rectified (Io): 150mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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1N4592 | Microchip Technology | Description: DIODE GEN PURP 600V 150A DO205AA |
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2N2608 | Microchip Technology | Description: JFET |
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MQ2N2608UB | Microchip Technology | Description: JFET |
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MQ2N2608UB/TR | Microchip Technology | Description: JFET |
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2N2608UB/TR | Microchip Technology | Description: JFET |
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2N2608UB | Microchip Technology | Description: JFET |
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MSMBJ36A | Microchip Technology |
Description: TVS DIODE 36VWM 58.1VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10.3A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Part Status: Active Qualification: MIL-PRF-19500 |
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JANTX1N6164A | Microchip Technology | Description: TVS DIODE 62.2VWM 112.8VC AXIAL |
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JANTX1N6165A | Microchip Technology |
Description: TVS DIODE 69.2VWM 125.1VC AXIAL Packaging: Bulk Package / Case: G, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12A Voltage - Reverse Standoff (Typ): 69.2V Supplier Device Package: C, Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 86.5V Voltage - Clamping (Max) @ Ipp: 125.1V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
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JANSR2N2906AUBC | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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T0780-6CP | Microchip Technology |
Description: IC RCVR MIX 800-1000MHZ 16SSO Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Frequency: 800MHz ~ 1GHz Voltage - Supply: 4.75V ~ 5.25V Gain: 10dB Current - Supply: 180mA Noise Figure: 19dB Number of Mixers: 1 Supplier Device Package: 16-SSOP |
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JANTXV1N6050A | Microchip Technology |
Description: TVS DIODE 25VWM 41.4VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500/507 |
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JANTX1N6050A/TR | Microchip Technology |
Description: BI-DIRECTIONAL TVS Packaging: Tape & Reel (TR) Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500/507 |
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JAN1N6050A/TR | Microchip Technology |
Description: TVS DIODE 25VWM 41.4VC DO13 Packaging: Tape & Reel (TR) Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500/507 |
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JANTXV1N6050A/TR | Microchip Technology |
Description: BI-DIRECTIONAL TVS Packaging: Tape & Reel (TR) Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500/507 |
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JAN1N6050A | Microchip Technology |
Description: TVS DIODE 25VWM 41.4VC DO13 Packaging: Bulk Package / Case: DO-202AA, DO-13, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 36A Voltage - Reverse Standoff (Typ): 25V Supplier Device Package: DO-13 (DO-202AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Military Qualification: MIL-PRF-19500/507 |
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VCC1-1580-50M0000000 | Microchip Technology | Description: VCC1-1580-50M0000000 |
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MSMCGLCE64A | Microchip Technology | Description: TVS DIODE 64VWM 103VC SMCG |
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2N6030 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP Supplier Device Package: TO-204AD (TO-3) Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 200 W |
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1N6030B/TR | Microchip Technology | Description: VOLTAGE REGULATOR |
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1N6030UR-1 | Microchip Technology | Description: DIODE ZENER |
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1N6030UR | Microchip Technology | Description: DIODE ZENER |
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USB7016T-I/KDX | Microchip Technology |
Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC, Packaging: Tape & Reel (TR) Package / Case: 100-VFQFN Exposed Pad Function: Hub Controller Interface: GPIO, I2C, SPI, USB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V Protocol: USB Standards: USB 2.0, USB 3.2 Supplier Device Package: 100-VQFN (12x12) Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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USB7016T/KDX | Microchip Technology |
Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC, Packaging: Tape & Reel (TR) Package / Case: 100-VFQFN Exposed Pad Function: Hub Controller Interface: GPIO, I2C, SPI, USB Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V Protocol: USB Standards: USB 2.0, USB 3.2 Supplier Device Package: 100-VQFN (12x12) Grade: Automotive Part Status: Active DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
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PM4390-FEI | Microchip Technology | Description: IC TELECOM INTERFACE |
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PM4390B-FGI | Microchip Technology | Description: IC TELECOM INTERFACE 8 CHAN |
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JANTX1N5651A/TR | Microchip Technology | Description: UNI-DIRECTIONAL TVS |
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JANTXV1N5651A/TR | Microchip Technology | Description: TVS DIODE 47.8VWM 77VC DO13 |
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JANTX1N5651A | Microchip Technology | Description: TVS DIODE 47.8VWM 77VC DO13 |
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JAN1N5651A | Microchip Technology | Description: TVS DIODE 47.8VWM 77VC DO13 |
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JAN1N5651A/TR | Microchip Technology | Description: UNI-DIRECTIONAL TVS |
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1N5651 | Microchip Technology | Description: TVS DIODE 45.4VWM 80.5VC DO13 |
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ATSAM4CMP32CB-AUTR |
Виробник: Microchip Technology
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
Description: TQFP, GREEN, IND, CRYPTO, MRLB,
товар відсутній
JAN1N4249 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
1N4249 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
JAN1N4249/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товар відсутній
1N4249US |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A MELF-1
Packaging: Bulk
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF-1
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A MELF-1
Packaging: Bulk
Package / Case: SQ-MELF
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: MELF-1
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
товар відсутній
JANTXV1N4249/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товар відсутній
1N4249/TR |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE GEN PURP 1KV 1A
Packaging: Tape & Reel (TR)
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
товар відсутній
EMC1412-1-ACZL-TR |
Виробник: Microchip Technology
Description: SENSOR DIGITAL -40C-125C 8TSSOP
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 11 b
Supplier Device Package: 8-TSSOP
Test Condition: -5°C ~ 100°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±2°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
Description: SENSOR DIGITAL -40C-125C 8TSSOP
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 11 b
Supplier Device Package: 8-TSSOP
Test Condition: -5°C ~ 100°C (-40°C ~ 125°C)
Accuracy - Highest (Lowest): ±1°C (±2°C)
Sensing Temperature - Local: -40°C ~ 125°C
Sensing Temperature - Remote: -64°C ~ 191°C
на замовлення 9171 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 62.79 грн |
25+ | 50.16 грн |
100+ | 48.96 грн |
1N4531UR-1 |
Виробник: Microchip Technology
Description: DIODE GEN PURP 75V 125MA DO213AA
Description: DIODE GEN PURP 75V 125MA DO213AA
товар відсутній
1N4529R |
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE GEN PURP 1KV 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товар відсутній
1N459/TR |
Виробник: Microchip Technology
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
1N4592TS |
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 150A DO205AA
Description: DIODE GEN PURP 600V 150A DO205AA
товар відсутній
1N459AUR |
Виробник: Microchip Technology
Description: DIODE GP 200V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GP 200V 150MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
1N459A/TR |
Виробник: Microchip Technology
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GP REV 200V 150MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
MSMBJ36A |
Виробник: Microchip Technology
Description: TVS DIODE 36VWM 58.1VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
Description: TVS DIODE 36VWM 58.1VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500
товар відсутній
JANTX1N6164A |
Виробник: Microchip Technology
Description: TVS DIODE 62.2VWM 112.8VC AXIAL
Description: TVS DIODE 62.2VWM 112.8VC AXIAL
товар відсутній
JANTX1N6165A |
Виробник: Microchip Technology
Description: TVS DIODE 69.2VWM 125.1VC AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 69.2V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 69.2VWM 125.1VC AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 69.2V
Supplier Device Package: C, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
товар відсутній
T0780-6CP |
Виробник: Microchip Technology
Description: IC RCVR MIX 800-1000MHZ 16SSO
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz ~ 1GHz
Voltage - Supply: 4.75V ~ 5.25V
Gain: 10dB
Current - Supply: 180mA
Noise Figure: 19dB
Number of Mixers: 1
Supplier Device Package: 16-SSOP
Description: IC RCVR MIX 800-1000MHZ 16SSO
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz ~ 1GHz
Voltage - Supply: 4.75V ~ 5.25V
Gain: 10dB
Current - Supply: 180mA
Noise Figure: 19dB
Number of Mixers: 1
Supplier Device Package: 16-SSOP
товар відсутній
JANTXV1N6050A |
Виробник: Microchip Technology
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
товар відсутній
JANTX1N6050A/TR |
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
товар відсутній
JAN1N6050A/TR |
Виробник: Microchip Technology
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
товар відсутній
JANTXV1N6050A/TR |
Виробник: Microchip Technology
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
Description: BI-DIRECTIONAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
товар відсутній
JAN1N6050A |
Виробник: Microchip Technology
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
Description: TVS DIODE 25VWM 41.4VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/507
товар відсутній
VCC1-1580-50M0000000 |
Виробник: Microchip Technology
Description: VCC1-1580-50M0000000
Description: VCC1-1580-50M0000000
товар відсутній
2N6030 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-204AD (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
товар відсутній
USB7016T-I/KDX |
Виробник: Microchip Technology
Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC,
Packaging: Tape & Reel (TR)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC,
Packaging: Tape & Reel (TR)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 582.27 грн |
USB7016T/KDX |
Виробник: Microchip Technology
Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC,
Packaging: Tape & Reel (TR)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: USB3.1 GEN1 HUB WITHOUT PD, 1CC,
Packaging: Tape & Reel (TR)
Package / Case: 100-VFQFN Exposed Pad
Function: Hub Controller
Interface: GPIO, I2C, SPI, USB
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.08V ~ 1.32V, 3V ~ 3.6V
Protocol: USB
Standards: USB 2.0, USB 3.2
Supplier Device Package: 100-VQFN (12x12)
Grade: Automotive
Part Status: Active
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товар відсутній
JANTXV1N5651A/TR |
Виробник: Microchip Technology
Description: TVS DIODE 47.8VWM 77VC DO13
Description: TVS DIODE 47.8VWM 77VC DO13
товар відсутній