Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (336356) > Сторінка 1611 з 5606
Фото | Назва | Виробник | Інформація |
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VCC6-LCD-125M000000 | Microchip Technology | Description: DIFFERENTIAL XO +3.3 VDC +/-5% L |
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IS1870SF-102 | Microchip Technology |
Description: BLUETOOTH BLE IC 6X6MM I-TEMP Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Sensitivity: -90dBm Mounting Type: Surface Mount Frequency: 2.402GHz ~ 2.48GHz Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM Type: TxRx + MCU Operating Temperature: -20°C ~ 70°C (TA) Voltage - Supply: 1.9V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v5.0 Current - Receiving: 13mA Data Rate (Max): 921.6kbps Current - Transmitting: 13mA Supplier Device Package: 48-QFN (6x6) GPIO: 31 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
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IS1870SF-102 | Microchip Technology |
Description: BLUETOOTH BLE IC 6X6MM I-TEMP Packaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Sensitivity: -90dBm Mounting Type: Surface Mount Frequency: 2.402GHz ~ 2.48GHz Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM Type: TxRx + MCU Operating Temperature: -20°C ~ 70°C (TA) Voltage - Supply: 1.9V ~ 3.6V Power - Output: 0dBm Protocol: Bluetooth v5.0 Current - Receiving: 13mA Data Rate (Max): 921.6kbps Current - Transmitting: 13mA Supplier Device Package: 48-QFN (6x6) GPIO: 31 RF Family/Standard: Bluetooth Serial Interfaces: ADC, I²C, PWM, SPI, UART Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 4980 шт: термін постачання 21-31 дні (днів) |
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BM71BLE01FC2-0B05BA | Microchip Technology | Description: RX TXRX MOD BLUETOOTH 17MOD |
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JANSR2N7591U3 | Microchip Technology | Description: RH MOSFET _ U3 |
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MRH25N12U3 | Microchip Technology |
Description: RH MOSFET _ U3 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: U3 (SMD-0.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V |
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JANSR2N7593U3 | Microchip Technology |
Description: RH MOSFET _ U3 Packaging: Tray Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: U3 (SMD-0.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V |
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JANTXV1N6843CCU3/TR | Microchip Technology | Description: DIODE SCHOTTKY 100V 15A U3 |
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JANTX1N6842U3 | Microchip Technology | Description: DIODE SCHOTTKY 60V 10A U3 |
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1N6842 | Microchip Technology | Description: DIODE SCHOTTKY 60V 10A U3 |
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1N6842U3 | Microchip Technology | Description: DIODE SCHOTTKY 60V 10A U3 |
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JANSF2N5154U3 | Microchip Technology |
Description: TRANS NPN 80V 2A U3 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: U3 (SMD-0.5) Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
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JANTXV1N6841U3 | Microchip Technology | Description: DIODE SCHOTTKY 35V 10A U3 |
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JAN1N6842U3 | Microchip Technology | Description: DIODE SCHOTTKY 60V 10A U3 |
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JANTX1N6843U3 | Microchip Technology | Description: DIODE SCHOTTKY 100V 10A U3 |
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MNS1N6844U3 | Microchip Technology | Description: DIODE SCHOTTKY 100V 20A U3 |
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JAN2N5661U3 | Microchip Technology | Description: TRANS NPN 300V 2A U3 |
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JANTX2N5152U3 | Microchip Technology | Description: TRANS NPN 80V 0.001A U3 |
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MCP16413-I/UN | Microchip Technology |
Description: IC LOW PWR BOOST CONVERTER Packaging: Tube Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 600mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 500kHz Voltage - Input (Max): 5.25V Topology: Boost Supplier Device Package: 10-MSOP Synchronous Rectifier: Yes Voltage - Output (Max): 5.25V Voltage - Input (Min): 0.82V Voltage - Output (Min/Fixed): 1.8V Part Status: Active |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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JANSL2N2906AUA | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSF2N2906AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANSD2N2906AUBC | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSM2N2906AUBC | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSD2N2906A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANSP2N2906A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANSF2N2906A | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANSF2N2906AUBC/TR | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSF2N2906AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANSD2N2906AUA | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSM2N2906AUBC/TR | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSF2N2906AUA | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSP2N2906AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANSL2N2906AUBC | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANKCBM2N2906A | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANKCBL2N2906A | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSR2N2906AUBC/TR | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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JANSP2N2906AUA | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
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MXSMBJ110A | Microchip Technology |
Description: TVS DIODE 110VWM 177VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.4A Voltage - Reverse Standoff (Typ): 110V Supplier Device Package: SMBJ (DO-214AA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 122V Voltage - Clamping (Max) @ Ipp: 177V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MA5KP7.5CA | Microchip Technology | Description: TVS DIODE 7.5VWM 12.9VC DO204AR |
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MIC5206-2.5YM5-TR | Microchip Technology |
Description: IC REG LINEAR 2.5V 150MA SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 16V Number of Regulators: 1 Supplier Device Package: SOT-23-5 Voltage - Output (Min/Fixed): 2.5V Control Features: Enable, Error Flag Part Status: Active Voltage Dropout (Max): 0.35V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 2.5 mA |
на замовлення 5870 шт: термін постачання 21-31 дні (днів) |
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JAN1N4125C-1 | Microchip Technology |
Description: DIODE ZENER 47V DO35 Tolerance: ±2% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AH (DO-35) Grade: Military Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V Qualification: MIL-PRF-19500/435 |
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DSC6023HI2A-00A7T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00A7T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00A4T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00A4T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6021CI2A-00A0T | Microchip Technology |
Description: MEMS OSC XO 1.71V-3.63V 4SMD Packaging: Tape & Reel (TR) Package / Case: 4-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Height: 0.035" (0.90mm) Current - Supply (Max): 1.3mA (Typ) Frequency - Output 1: 19.44MHz, 25MHz Base Resonator: MEMS |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00A5T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00A5T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00ABT | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00ABT | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6021CI2A-00A2T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
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DSC6021CI2A-00A2T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 85 шт: термін постачання 21-31 дні (днів) |
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DSC6021CI2A-00A3T | Microchip Technology |
Description: MEMS OSC XO 1.71V-3.63V 4SMD Packaging: Tape & Reel (TR) Package / Case: 4-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Height: 0.035" (0.90mm) Current - Supply (Max): 1.3mA (Typ) Frequency - Output 1: 6.1298MHz, 6.1679MHz Base Resonator: MEMS |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00A9T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00A9T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00ADT | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6021CI2A-009WT | Microchip Technology |
Description: MEMS OSC XO 1.71V-3.63V 4SMD Packaging: Tape & Reel (TR) Package / Case: 4-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Height: 0.035" (0.90mm) Current - Supply (Max): 1.3mA (Typ) Frequency - Output 1: 25MHz, 27MHz Base Resonator: MEMS |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00A6T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00A6T | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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DSC6023HI2A-00AAT | Microchip Technology | Description: MEMS OSC XO 1.71V-3.63V 4SMD |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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VCC6-LCD-125M000000 |
Виробник: Microchip Technology
Description: DIFFERENTIAL XO +3.3 VDC +/-5% L
Description: DIFFERENTIAL XO +3.3 VDC +/-5% L
товар відсутній
IS1870SF-102 |
Виробник: Microchip Technology
Description: BLUETOOTH BLE IC 6X6MM I-TEMP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 13mA
Supplier Device Package: 48-QFN (6x6)
GPIO: 31
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: BLUETOOTH BLE IC 6X6MM I-TEMP
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 13mA
Supplier Device Package: 48-QFN (6x6)
GPIO: 31
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
товар відсутній
IS1870SF-102 |
Виробник: Microchip Technology
Description: BLUETOOTH BLE IC 6X6MM I-TEMP
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 13mA
Supplier Device Package: 48-QFN (6x6)
GPIO: 31
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
Description: BLUETOOTH BLE IC 6X6MM I-TEMP
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 256kB Flash, 32kB ROM, 24kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C (TA)
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 0dBm
Protocol: Bluetooth v5.0
Current - Receiving: 13mA
Data Rate (Max): 921.6kbps
Current - Transmitting: 13mA
Supplier Device Package: 48-QFN (6x6)
GPIO: 31
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I²C, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
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2+ | 199.05 грн |
BM71BLE01FC2-0B05BA |
Виробник: Microchip Technology
Description: RX TXRX MOD BLUETOOTH 17MOD
Description: RX TXRX MOD BLUETOOTH 17MOD
товар відсутній
MRH25N12U3 |
Виробник: Microchip Technology
Description: RH MOSFET _ U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: U3 (SMD-0.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
Description: RH MOSFET _ U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.5A, 12V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: U3 (SMD-0.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
товар відсутній
JANSR2N7593U3 |
Виробник: Microchip Technology
Description: RH MOSFET _ U3
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: U3 (SMD-0.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Description: RH MOSFET _ U3
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: U3 (SMD-0.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
товар відсутній
JANTXV1N6843CCU3/TR |
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 100V 15A U3
Description: DIODE SCHOTTKY 100V 15A U3
товар відсутній
JANSF2N5154U3 |
Виробник: Microchip Technology
Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 2A U3
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: U3 (SMD-0.5)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товар відсутній
MCP16413-I/UN |
Виробник: Microchip Technology
Description: IC LOW PWR BOOST CONVERTER
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 600mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 5.25V
Topology: Boost
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.25V
Voltage - Input (Min): 0.82V
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
Description: IC LOW PWR BOOST CONVERTER
Packaging: Tube
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 600mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 5.25V
Topology: Boost
Supplier Device Package: 10-MSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.25V
Voltage - Input (Min): 0.82V
Voltage - Output (Min/Fixed): 1.8V
Part Status: Active
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 96.68 грн |
25+ | 77.36 грн |
JANSF2N2906AL |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
JANSD2N2906A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
JANSP2N2906A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
JANSF2N2906A |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
JANSF2N2906AUB |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
JANSP2N2906AL |
Виробник: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
товар відсутній
MXSMBJ110A |
Виробник: Microchip Technology
Description: TVS DIODE 110VWM 177VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 110VWM 177VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.4A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
товар відсутній
MA5KP7.5CA |
Виробник: Microchip Technology
Description: TVS DIODE 7.5VWM 12.9VC DO204AR
Description: TVS DIODE 7.5VWM 12.9VC DO204AR
товар відсутній
MIC5206-2.5YM5-TR |
Виробник: Microchip Technology
Description: IC REG LINEAR 2.5V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Part Status: Active
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2.5 mA
Description: IC REG LINEAR 2.5V 150MA SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable, Error Flag
Part Status: Active
Voltage Dropout (Max): 0.35V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 2.5 mA
на замовлення 5870 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 68.96 грн |
25+ | 55.72 грн |
100+ | 50.1 грн |
JAN1N4125C-1 |
Виробник: Microchip Technology
Description: DIODE ZENER 47V DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
Qualification: MIL-PRF-19500/435
Description: DIODE ZENER 47V DO35
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
Qualification: MIL-PRF-19500/435
товар відсутній
DSC6023HI2A-00A7T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 63.45 грн |
DSC6023HI2A-00A7T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.6 грн |
25+ | 67.36 грн |
100+ | 61.11 грн |
DSC6023HI2A-00A4T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 63.45 грн |
DSC6023HI2A-00A4T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.6 грн |
25+ | 67.36 грн |
100+ | 61.11 грн |
DSC6021CI2A-00A0T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.90mm)
Current - Supply (Max): 1.3mA (Typ)
Frequency - Output 1: 19.44MHz, 25MHz
Base Resonator: MEMS
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.90mm)
Current - Supply (Max): 1.3mA (Typ)
Frequency - Output 1: 19.44MHz, 25MHz
Base Resonator: MEMS
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 43.53 грн |
DSC6023HI2A-00A5T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 63.45 грн |
DSC6023HI2A-00A5T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.6 грн |
25+ | 67.36 грн |
100+ | 61.11 грн |
DSC6023HI2A-00ABT |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 63.45 грн |
DSC6023HI2A-00ABT |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.6 грн |
25+ | 67.36 грн |
100+ | 61.11 грн |
DSC6021CI2A-00A2T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
товар відсутній
DSC6021CI2A-00A2T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 85 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 63.27 грн |
25+ | 50.69 грн |
DSC6021CI2A-00A3T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.90mm)
Current - Supply (Max): 1.3mA (Typ)
Frequency - Output 1: 6.1298MHz, 6.1679MHz
Base Resonator: MEMS
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.90mm)
Current - Supply (Max): 1.3mA (Typ)
Frequency - Output 1: 6.1298MHz, 6.1679MHz
Base Resonator: MEMS
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 43.53 грн |
DSC6023HI2A-00A9T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 63.45 грн |
DSC6023HI2A-00A9T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.6 грн |
25+ | 67.36 грн |
100+ | 61.11 грн |
DSC6023HI2A-00ADT |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.6 грн |
25+ | 67.36 грн |
100+ | 61.11 грн |
DSC6021CI2A-009WT |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.90mm)
Current - Supply (Max): 1.3mA (Typ)
Frequency - Output 1: 25MHz, 27MHz
Base Resonator: MEMS
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Height: 0.035" (0.90mm)
Current - Supply (Max): 1.3mA (Typ)
Frequency - Output 1: 25MHz, 27MHz
Base Resonator: MEMS
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 43.53 грн |
DSC6023HI2A-00A6T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 63.45 грн |
DSC6023HI2A-00A6T |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 84.6 грн |
25+ | 67.36 грн |
100+ | 61.11 грн |
DSC6023HI2A-00AAT |
Виробник: Microchip Technology
Description: MEMS OSC XO 1.71V-3.63V 4SMD
Description: MEMS OSC XO 1.71V-3.63V 4SMD
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1000+ | 63.45 грн |