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ATSAM4LC4BA-AUR ATSAM4LC4BA-AUR Microchip Technology Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 43
DigiKey Programmable: Not Verified
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MPLAD36KP160AE3 MPLAD36KP160AE3 Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160AE3/TR MPLAD36KP160AE3/TR Microchip Technology microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CAE3 MPLAD36KP160CAE3 Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CA/TR MPLAD36KP160CA/TR Microchip Technology microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CAE3/TR MPLAD36KP160CAE3/TR Microchip Technology microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160A MAPLAD36KP160A Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160AE3 MAPLAD36KP160AE3 Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160CA MAPLAD36KP160CA Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160CAE3 MAPLAD36KP160CAE3 Microchip Technology MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE51A MP6KE51A Microchip Technology rf01007_rb.pdf Description: TVS DIODE 43.6VWM 70.1VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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2N3634UB/TR 2N3634UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
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JAN2N3634UB/TR JAN2N3634UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3634UB/TR JANTXV2N3634UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3634UB JANTXV2N3634UB Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTX2N3634UB/TR JANTX2N3634UB/TR Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSF2N3634UB JANSF2N3634UB Microchip Technology 2N3634-2N3637UB-LDS-0156-MIL-PRF-19500-357.pdf Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500
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JANSF2N3634UB/TR Microchip Technology Description: 140V RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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JANSR2N3634UB JANSR2N3634UB Microchip Technology Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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MIC4468CWM TR MIC4468CWM TR Microchip Technology MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
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SMBJ5929BE3/TR13 SMBJ5929BE3/TR13 Microchip Technology 10867-sa3-41-datasheet Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
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SMBJ5929BE3/TR13 SMBJ5929BE3/TR13 Microchip Technology 10867-sa3-41-datasheet Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
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1N5276BE3 1N5276BE3 Microchip Technology 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 150V 500MW DO204AH
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 114 V
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MSMCGLCE64Ae3 MSMCGLCE64Ae3 Microchip Technology rf01002.pdf Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMCGLCE70A Microchip Technology 10562-msmclce-datasheet Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMCJ120A MSMCJ120A Microchip Technology rf01001_rev_b_final-pd-000307351.pdf Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMCJ13A MSMCJ13A Microchip Technology rf01001_rev_b_final-pd-000307351.pdf Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 69.7A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSCDC100A120D1PAG MSCDC100A120D1PAG Microchip Technology 1244371-mscdc100a120d1pag-datasheet Description: DIODE MODULE SIC 1200V 100A D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+12239.98 грн
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MSCDC100A70D1PAG MSCDC100A70D1PAG Microchip Technology 1244354-mscdc100a70d1pag-datasheet Description: DIODE MODULE SIC 700V 100A D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 700 V
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JANTX1N4955 JANTX1N4955 Microchip Technology 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 7.5V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1.5 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V
Qualification: MIL-PRF-19500/356
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
1+507.43 грн
100+453.78 грн
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JANTX1N4954 JANTX1N4954 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 6.8V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
Qualification: MIL-PRF-19500/356
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JANTX1N4958 JANTX1N4958 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 10V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Qualification: MIL-PRF-19500/356
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JANTX1N4954US JANTX1N4954US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 6.8V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
Qualification: MIL-PRF-19500/356
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MSMLG75Ae3 MSMLG75Ae3 Microchip Technology 10563-msml-datasheet Description: TVS DIODE 75VWM 121VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JAN1N3022D-1 JAN1N3022D-1 Microchip Technology 125225-lds-0285-datasheet Description: DIODE ZENER 12V 1W DO204AL
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTXV1N3022C-1 JANTXV1N3022C-1 Microchip Technology 125225-lds-0285-datasheet Description: DIODE ZENER 12V 1W DO204AL
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JAN1N3022CUR-1 JAN1N3022CUR-1 Microchip Technology 1N3016BUR-1-1N3045BUR-1.pdf Description: DIODE ZENER 12V 1W DO213AB
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTX1N3022CUR-1 JANTX1N3022CUR-1 Microchip Technology 5787-1n3016bur-datasheet Description: DIODE ZENER 12V 1W DO213AB
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTXV1N3022D-1 JANTXV1N3022D-1 Microchip Technology 125225-lds-0285-datasheet Description: DIODE ZENER 12V 1W DO204AL
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTXV1N3022CUR-1 JANTXV1N3022CUR-1 Microchip Technology 5787-1n3016bur-datasheet Description: DIODE ZENER 12V 1W DO213AB
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTXV1N3022DUR-1 JANTXV1N3022DUR-1 Microchip Technology 5787-1n3016bur-datasheet Description: DIODE ZENER 12V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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MIC37302BR MIC37302BR Microchip Technology MIC37300-01-02-03-3.0A-Low-Voltage-microCap-LDO-Regulator-DS20006169A.pdf Description: IC REG LINEAR POS ADJ 3A 5-SPAK
Packaging: Tube
Package / Case: SPak-5 (5 leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SPAK
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity
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MIC37302BR TR MIC37302BR TR Microchip Technology MIC37300-01-02-03-3.0A-Low-Voltage-microCap-LDO-Regulator-DS20006169A.pdf Description: IC REG LINEAR POS ADJ 3A 5-SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-5 (5 leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SPAK
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity
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ATTINY416-MN ATTINY416-MN Microchip Technology ATtiny212-214-412-414-416-DataSheet-DS40002287A.pdf Description: 20MHZ, 4KB, VQFN20, IND 105C, TR
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-VQFN (3x3)
Number of I/O: 18
на замовлення 1435 шт:
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ATTINY416-MF ATTINY416-MF Microchip Technology ATtiny212-214-412-414-416-DataSheet-DS40002287A.pdf Description: 20MHZ, 4KB, VQFN20, EXT 125C, TR
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-VQFN (3x3)
Number of I/O: 18
на замовлення 1466 шт:
термін постачання 21-31 дні (днів)
6+60.04 грн
25+53.60 грн
100+48.33 грн
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ATMEGA8-16PI ATMEGA8-16PI Microchip Technology ATmega8%28L%29%20Complete.pdf Description: IC MCU 8BIT 8KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 6x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 23
DigiKey Programmable: Not Verified
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MCP16414-I/MN MCP16414-I/MN Microchip Technology MCP1641X_Analog_Spotlight_Digi-Key.pdf Description: IC REG BOOST ADJ 600MA 10TDFN
Packaging: Tube
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 600mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 5.25V
Topology: Boost
Supplier Device Package: 10-TDFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.25V
Voltage - Input (Min): 0.82V
Voltage - Output (Min/Fixed): 1.8V
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MCP16413-I/MN MCP16413-I/MN Microchip Technology MCP1641X_Analog_Spotlight_Digi-Key.pdf Description: IC REG BOOST ADJ 600MA 10TDFN
Packaging: Tube
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 600mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 5.25V
Topology: Boost
Supplier Device Package: 10-TDFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.25V
Voltage - Input (Min): 0.82V
Voltage - Output (Min/Fixed): 1.8V
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1N5821 1N5821 Microchip Technology 131997-lds-0303.pdf Description: DIODE SCHOTTKY 30V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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DSC1204CI2-100M0000 DSC1204CI2-100M0000 Microchip Technology Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.5V ~ 3.3V
Current - Supply (Max): 40mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
2+225.34 грн
25+180.44 грн
100+174.37 грн
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DSC1204CI2-100M0000T DSC1204CI2-100M0000T Microchip Technology DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011.pdf Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 40mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
1+392.29 грн
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50+362.89 грн
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MSCDR-EFUSE-003 Microchip Technology Auxiliary-E-Fuse-User-Guide-DS50003368.pdf Description: 400V30A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 3 шт:
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1+29587.16 грн
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MSCDR-EFUSE-001 Microchip Technology Auxiliary-E-Fuse-User-Guide-DS50003368.pdf Description: 400V10A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 3 шт:
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MSCDR-EFUSE-002 Microchip Technology Auxiliary-E-Fuse-User-Guide-DS50003368.pdf Description: 400V20A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 3 шт:
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MSCDR-EFUSE-005 Microchip Technology Auxiliary-E-Fuse-User-Guide-DS50003368.pdf Description: 800V20A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+31055.17 грн
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MSCDR-EFUSE-004 Microchip Technology Auxiliary-E-Fuse-User-Guide-DS50003368.pdf Description: 800V10A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
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MSCDR-EFUSE-006 MSCDR-EFUSE-006 Microchip Technology Auxiliary-E-Fuse-User-Guide-DS50003368.pdf Description: 800V30A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+31055.17 грн
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MIC5209-3.3BU MIC5209-3.3BU Microchip Technology 20005720A.pdf Description: IC REG LINEAR 3.3V 500MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
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MIC5209-3.3BU TR MIC5209-3.3BU TR Microchip Technology 20005720A.pdf Description: IC REG LINEAR 3.3V 500MA TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
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PAC1954T-E/4MXVAO PAC1954T-E/4MXVAO Microchip Technology PAC195X-Family-Data-Sheet-DS20006539.pdf Description: IC CURRENT MONITOR 1% 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Current Monitor
Voltage - Input: 2.7V ~ 5.5V
Current - Output: 100mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 16-VQFN (3x3)
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ATSAM4LC4BA-AUR Atmel-42023-ARM-Microcontroller-ATSAM4L-Low-Power-LCD_Datasheet-Summary.pdf
ATSAM4LC4BA-AUR
Виробник: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Cut Tape (CT)
Package / Case: 64-TQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 7x12b; D/A 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.68V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 43
DigiKey Programmable: Not Verified
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MPLAD36KP160AE3 MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MPLAD36KP160AE3
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160AE3/TR microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf
MPLAD36KP160AE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CAE3 MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MPLAD36KP160CAE3
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CA/TR microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf
MPLAD36KP160CA/TR
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MPLAD36KP160CAE3/TR microsemi_rf01216_transient_voltage_suppressor_datasheet_revb.pdf
MPLAD36KP160CAE3/TR
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160A MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MAPLAD36KP160A
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160AE3 MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MAPLAD36KP160AE3
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160CA MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MAPLAD36KP160CA
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD36KP160CAE3 MPLAD36KP14A%20-%20MPLAD36KP400CA.pdf
MAPLAD36KP160CAE3
Виробник: Microchip Technology
Description: TVS DIODE 160VWM 259VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178V
Voltage - Clamping (Max) @ Ipp: 259V
Power - Peak Pulse: 36000W (36kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP6KE51A rf01007_rb.pdf
MP6KE51A
Виробник: Microchip Technology
Description: TVS DIODE 43.6VWM 70.1VC T18
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: T-18
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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2N3634UB/TR
2N3634UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
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JAN2N3634UB/TR
JAN2N3634UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3634UB/TR
JANTXV2N3634UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTXV2N3634UB
JANTXV2N3634UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANTX2N3634UB/TR
JANTX2N3634UB/TR
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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JANSF2N3634UB 2N3634-2N3637UB-LDS-0156-MIL-PRF-19500-357.pdf
JANSF2N3634UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500
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JANSF2N3634UB/TR
Виробник: Microchip Technology
Description: 140V RH SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
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JANSR2N3634UB
JANSR2N3634UB
Виробник: Microchip Technology
Description: TRANS PNP 140V 1A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/357
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MIC4468CWM TR MIC4467-68-69-Quad-1.2A-Peak-Low-Side-MOSFET-Drivers-DS20006614A.pdf
MIC4468CWM TR
Виробник: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 14ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 4
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
DigiKey Programmable: Not Verified
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SMBJ5929BE3/TR13 10867-sa3-41-datasheet
SMBJ5929BE3/TR13
Виробник: Microchip Technology
Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
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SMBJ5929BE3/TR13 10867-sa3-41-datasheet
SMBJ5929BE3/TR13
Виробник: Microchip Technology
Description: DIODE ZENER 15V 2W DO214AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 2 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
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1N5276BE3 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5276BE3
Виробник: Microchip Technology
Description: DIODE ZENER 150V 500MW DO204AH
Tolerance: ±5%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 150 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 114 V
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MSMCGLCE64Ae3 rf01002.pdf
MSMCGLCE64Ae3
Виробник: Microchip Technology
Description: TVS DIODE 64VWM 103VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 14.6A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMCGLCE70A 10562-msmclce-datasheet
Виробник: Microchip Technology
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 13.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMCJ120A rf01001_rev_b_final-pd-000307351.pdf
MSMCJ120A
Виробник: Microchip Technology
Description: TVS DIODE 120VWM 193VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMCJ13A rf01001_rev_b_final-pd-000307351.pdf
MSMCJ13A
Виробник: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 69.7A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSCDC100A120D1PAG 1244371-mscdc100a120d1pag-datasheet
MSCDC100A120D1PAG
Виробник: Microchip Technology
Description: DIODE MODULE SIC 1200V 100A D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12239.98 грн
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MSCDC100A70D1PAG 1244354-mscdc100a70d1pag-datasheet
MSCDC100A70D1PAG
Виробник: Microchip Technology
Description: DIODE MODULE SIC 700V 100A D1P
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: D1P
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 400 µA @ 700 V
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JANTX1N4955 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
JANTX1N4955
Виробник: Microchip Technology
Description: DIODE ZENER 7.5V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 1.5 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 5.7 V
Qualification: MIL-PRF-19500/356
на замовлення 103 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+507.43 грн
100+453.78 грн
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JANTX1N4954 10913-sa5-37-datasheet
JANTX1N4954
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
Qualification: MIL-PRF-19500/356
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JANTX1N4958 10913-sa5-37-datasheet
JANTX1N4958
Виробник: Microchip Technology
Description: DIODE ZENER 10V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 2 Ohms
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 25 µA @ 7.6 V
Qualification: MIL-PRF-19500/356
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JANTX1N4954US 11059-sd44a-datasheet
JANTX1N4954US
Виробник: Microchip Technology
Description: DIODE ZENER 6.8V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 5.2 V
Qualification: MIL-PRF-19500/356
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MSMLG75Ae3 10563-msml-datasheet
MSMLG75Ae3
Виробник: Microchip Technology
Description: TVS DIODE 75VWM 121VC DO215AB
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24.8A
Voltage - Reverse Standoff (Typ): 75V
Supplier Device Package: DO-215AB (SMLG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 83.3V
Voltage - Clamping (Max) @ Ipp: 121V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JAN1N3022D-1 125225-lds-0285-datasheet
JAN1N3022D-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO204AL
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTXV1N3022C-1 125225-lds-0285-datasheet
JANTXV1N3022C-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO204AL
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JAN1N3022CUR-1 1N3016BUR-1-1N3045BUR-1.pdf
JAN1N3022CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO213AB
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTX1N3022CUR-1 5787-1n3016bur-datasheet
JANTX1N3022CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO213AB
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTXV1N3022D-1 125225-lds-0285-datasheet
JANTXV1N3022D-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO204AL
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTXV1N3022CUR-1 5787-1n3016bur-datasheet
JANTXV1N3022CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO213AB
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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JANTXV1N3022DUR-1 5787-1n3016bur-datasheet
JANTXV1N3022DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 1W DO213AB
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Grade: Military
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Qualification: MIL-PRF-19500/115
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MIC37302BR MIC37300-01-02-03-3.0A-Low-Voltage-microCap-LDO-Regulator-DS20006169A.pdf
MIC37302BR
Виробник: Microchip Technology
Description: IC REG LINEAR POS ADJ 3A 5-SPAK
Packaging: Tube
Package / Case: SPak-5 (5 leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SPAK
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity
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MIC37302BR TR MIC37300-01-02-03-3.0A-Low-Voltage-microCap-LDO-Regulator-DS20006169A.pdf
MIC37302BR TR
Виробник: Microchip Technology
Description: IC REG LINEAR POS ADJ 3A 5-SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-5 (5 leads + Tab)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SPAK
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1.24V
Control Features: Enable
Protection Features: Over Current, Over Temperature, Reverse Polarity
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ATTINY416-MN ATtiny212-214-412-414-416-DataSheet-DS40002287A.pdf
ATTINY416-MN
Виробник: Microchip Technology
Description: 20MHZ, 4KB, VQFN20, IND 105C, TR
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-VQFN (3x3)
Number of I/O: 18
на замовлення 1435 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.21 грн
25+52.11 грн
100+46.81 грн
Мінімальне замовлення: 6
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ATTINY416-MF ATtiny212-214-412-414-416-DataSheet-DS40002287A.pdf
ATTINY416-MF
Виробник: Microchip Technology
Description: 20MHZ, 4KB, VQFN20, EXT 125C, TR
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 12x10b; D/A 1x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, WDT
Supplier Device Package: 20-VQFN (3x3)
Number of I/O: 18
на замовлення 1466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.04 грн
25+53.60 грн
100+48.33 грн
Мінімальне замовлення: 6
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ATMEGA8-16PI ATmega8%28L%29%20Complete.pdf
ATMEGA8-16PI
Виробник: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 28DIP
Packaging: Tube
Package / Case: 28-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Speed: 16MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 512 x 8
Core Processor: AVR
Data Converters: A/D 6x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 28-PDIP
Number of I/O: 23
DigiKey Programmable: Not Verified
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MCP16414-I/MN MCP1641X_Analog_Spotlight_Digi-Key.pdf
MCP16414-I/MN
Виробник: Microchip Technology
Description: IC REG BOOST ADJ 600MA 10TDFN
Packaging: Tube
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 600mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 5.25V
Topology: Boost
Supplier Device Package: 10-TDFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.25V
Voltage - Input (Min): 0.82V
Voltage - Output (Min/Fixed): 1.8V
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MCP16413-I/MN MCP1641X_Analog_Spotlight_Digi-Key.pdf
MCP16413-I/MN
Виробник: Microchip Technology
Description: IC REG BOOST ADJ 600MA 10TDFN
Packaging: Tube
Package / Case: 10-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 600mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 5.25V
Topology: Boost
Supplier Device Package: 10-TDFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.25V
Voltage - Input (Min): 0.82V
Voltage - Output (Min/Fixed): 1.8V
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1N5821 131997-lds-0303.pdf
1N5821
Виробник: Microchip Technology
Description: DIODE SCHOTTKY 30V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
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DSC1204CI2-100M0000
DSC1204CI2-100M0000
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.5V ~ 3.3V
Current - Supply (Max): 40mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
на замовлення 204 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+225.34 грн
25+180.44 грн
100+174.37 грн
Мінімальне замовлення: 2
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DSC1204CI2-100M0000T DSC12x2-3-4-High-Performance-Differential-MEMS-Oscillators-DS20006011.pdf
DSC1204CI2-100M0000T
Виробник: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Packaging: Strip
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: HCSL
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 40mA (Typ)
Supplier Device Package: 6-VDFN (3.2x2.5)
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+392.29 грн
10+368.97 грн
50+362.89 грн
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MSCDR-EFUSE-003 Auxiliary-E-Fuse-User-Guide-DS50003368.pdf
Виробник: Microchip Technology
Description: 400V30A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+29587.16 грн
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MSCDR-EFUSE-001 Auxiliary-E-Fuse-User-Guide-DS50003368.pdf
Виробник: Microchip Technology
Description: 400V10A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+29587.16 грн
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MSCDR-EFUSE-002 Auxiliary-E-Fuse-User-Guide-DS50003368.pdf
Виробник: Microchip Technology
Description: 400V20A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+29587.16 грн
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MSCDR-EFUSE-005 Auxiliary-E-Fuse-User-Guide-DS50003368.pdf
Виробник: Microchip Technology
Description: 800V20A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+31055.17 грн
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MSCDR-EFUSE-004 Auxiliary-E-Fuse-User-Guide-DS50003368.pdf
Виробник: Microchip Technology
Description: 800V10A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+31055.17 грн
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MSCDR-EFUSE-006 Auxiliary-E-Fuse-User-Guide-DS50003368.pdf
MSCDR-EFUSE-006
Виробник: Microchip Technology
Description: 800V30A SIC E-FUSE DEMONSTRATOR
Packaging: Box
Function: Electronic Fuses (eFuse)
Type: Circuit Protection
Contents: Board(s)
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+31055.17 грн
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MIC5209-3.3BU 20005720A.pdf
MIC5209-3.3BU
Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 500MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
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MIC5209-3.3BU TR 20005720A.pdf
MIC5209-3.3BU TR
Виробник: Microchip Technology
Description: IC REG LINEAR 3.3V 500MA TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 170 µA
Voltage - Input (Max): 16V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 75dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
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PAC1954T-E/4MXVAO PAC195X-Family-Data-Sheet-DS20006539.pdf
PAC1954T-E/4MXVAO
Виробник: Microchip Technology
Description: IC CURRENT MONITOR 1% 16VQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount, Wettable Flank
Function: Current Monitor
Voltage - Input: 2.7V ~ 5.5V
Current - Output: 100mA
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 16-VQFN (3x3)
товару немає в наявності
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