Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (293580) > Сторінка 4821 з 4893

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APT5010JVR APT5010JVR MICROCHIP TECHNOLOGY APT5010JVR_C.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of package: tube
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
1+3224.44 грн
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APT30M19JVFR APT30M19JVFR MICROCHIP TECHNOLOGY APT30M19JVFR.pdf Category: Transistor modules
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 19mΩ
Pulsed drain current: 520A
Power dissipation: 700W
Technology: POWER MOS V®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of package: tube
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+2028.16 грн
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MCP1402T-E/OT MCP1402T-E/OT MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOT23-5; 500mA; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Output current: 0.5A
Pulse fall time: 15ns
Kind of integrated circuit: MOSFET gate driver
Operating voltage: 4.5...18V
Impulse rise time: 19ns
на замовлення 633 шт:
термін постачання 14-30 дні (днів)
8+55.99 грн
9+48.69 грн
Мінімальне замовлення: 8 шт
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MCP1407-E/SN MCP1407-E/SN MICROCHIP TECHNOLOGY _Driver_SG.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: non-inverting
Pulse fall time: 20ns
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MCP14E3-E/SN MCP14E3-E/SN MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 15ns
Manufacturer standard package: 100pcs.
Kind of output: inverting
Pulse fall time: 18ns
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MCP1401T-E/OT MCP1401T-E/OT MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOT23-5; 500mA; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOT23-5
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 4.5...18V
Impulse rise time: 19ns
Manufacturer standard package: 3000pcs.
Pulse fall time: 15ns
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MCP1406-E/P MCP1406-E/P MICROCHIP TECHNOLOGY _Driver_SG.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Manufacturer standard package: 60pcs.
Output current: 6A
Kind of output: inverting
Pulse fall time: 20ns
Kind of integrated circuit: MOSFET gate driver
Operating voltage: 4.5...18V
Impulse rise time: 20ns
на замовлення 274 шт:
термін постачання 14-30 дні (днів)
5+102.21 грн
60+93.26 грн
Мінімальне замовлення: 5 шт
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MCP14E10-E/SN MCP14E10-E/SN MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: non-inverting
Pulse fall time: 25ns
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MCP14H2103T-E/SN MCP14H2103T-E/SN MICROCHIP TECHNOLOGY Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 70ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14E11-E/SN MCP14E11-E/SN MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: complementary
Pulse fall time: 20ns
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MCP1406-E/SN MCP1406-E/SN MICROCHIP TECHNOLOGY _Driver_SG.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: inverting
Pulse fall time: 20ns
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MCP1405-E/SN MCP1405-E/SN MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Case: SO8
Mounting: SMD
Kind of package: tube
Manufacturer standard package: 100pcs.
Output current: 4.5A
Type of integrated circuit: driver
Kind of output: complementary
Operating temperature: -40...125°C
Pulse fall time: 18ns
Kind of integrated circuit: MOSFET gate driver
Number of channels: 2
Operating voltage: 4.5...18V
Impulse rise time: 15ns
на замовлення 191 шт:
термін постачання 14-30 дні (днів)
3+181.31 грн
100+165.06 грн
Мінімальне замовлення: 3 шт
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MCP14A0602-E/SN MCP14A0602-E/SN MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 10ns
Manufacturer standard package: 100pcs.
Kind of output: non-inverting
Pulse fall time: 10ns
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MCP14A0302-E/SN MCP14A0302-E/SN MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: non-inverting
Pulse fall time: 18ns
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MCP1403-E/P MCP1403-E/P MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Number of channels: 2
Mounting: THT
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Manufacturer standard package: 60pcs.
Output current: 4.5A
Kind of output: inverting
Pulse fall time: 18ns
Kind of integrated circuit: MOSFET gate driver
Operating voltage: 4.5...18V
Impulse rise time: 15ns
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
2+245.30 грн
Мінімальне замовлення: 2 шт
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MCP14H2104T-E/SN MCP14H2104T-E/SN MICROCHIP TECHNOLOGY Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 70ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14E8-E/SN MCP14E8-E/SN MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 2A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: complementary
Pulse fall time: 25ns
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MCP14E10-E/P MCP14E10-E/P MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 60pcs.
Kind of output: non-inverting
Pulse fall time: 25ns
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MCP14H2304T-E/SN MCP14H2304T-E/SN MICROCHIP TECHNOLOGY Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 70ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14LH21064T-E/SL MCP14LH21064T-E/SL MICROCHIP TECHNOLOGY Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC14; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 100ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14LH21814T-E/SL MCP14LH21814T-E/SL MICROCHIP TECHNOLOGY Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -2.3÷1.9A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 40ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 20ns
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MCP14LH21904T-E/SL MCP14LH21904T-E/SL MICROCHIP TECHNOLOGY MCP14H2103-MCP14H2104-Half-Bridge-Gate-Driver-DS60001906.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC14; -4.5÷4.5A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 25ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 20ns
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MCP14LH2190T-E/SN MCP14LH2190T-E/SN MICROCHIP TECHNOLOGY MCP14H2103-MCP14H2104-Half-Bridge-Gate-Driver-DS60001906.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -4.5÷4.5A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 25ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 20ns
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MCP14LH2101T-E/SN MCP14LH2101T-E/SN MICROCHIP TECHNOLOGY Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 70ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14E6-E/P MCP14E6-E/P MICROCHIP TECHNOLOGY _Driver_SG.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 2A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 60pcs.
Kind of output: inverting
Pulse fall time: 20ns
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MCP8062136T-E/SO MICROCHIP TECHNOLOGY MCP8062136-3-Phase-Half-Bridge-Gate-Driver-DS20007073.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC28; -350÷200mA; Ch: 6; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC28
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 90ns
Manufacturer standard package: 1500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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SMBJ5.0AE3/TR13 SMBJ5.0AE3/TR13 MICROCHIP TECHNOLOGY SA3-37.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
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MSMBJ5.0AE3 MSMBJ5.0AE3 MICROCHIP TECHNOLOGY 10560-msmb-datasheet Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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MASMBJ5.0A MASMBJ5.0A MICROCHIP TECHNOLOGY 10560-msmb-datasheet Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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MASMBJ5.0Ae3 MASMBJ5.0Ae3 MICROCHIP TECHNOLOGY 10560-msmb-datasheet Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 200 шт
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MSMBJ5.0A MSMBJ5.0A MICROCHIP TECHNOLOGY MSMBJ_Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 658 шт
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MSMBJ5.0A/TR MSMBJ5.0A/TR MICROCHIP TECHNOLOGY 10560-msmb-datasheet Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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MSMBJ5.0AE3/TR MSMBJ5.0AE3/TR MICROCHIP TECHNOLOGY 10560-msmb-datasheet Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 575 шт
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SMBJ24AE3/TR13 SMBJ24AE3/TR13 MICROCHIP TECHNOLOGY SA3-37.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
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MASMBJ24A MASMBJ24A MICROCHIP TECHNOLOGY 10560-msmb-datasheet Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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MASMBJ24AE3 MASMBJ24AE3 MICROCHIP TECHNOLOGY RF01000+%283%29.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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MSMBJ24A MSMBJ24A MICROCHIP TECHNOLOGY MSMBJ_Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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MSMBJ24A/TR MSMBJ24A/TR MICROCHIP TECHNOLOGY 10560-msmb-datasheet Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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MSMBJ24Ae3 MSMBJ24Ae3 MICROCHIP TECHNOLOGY RF01000+%283%29.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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MSMBJ24AE3/TR MSMBJ24AE3/TR MICROCHIP TECHNOLOGY RF01000+%283%29.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 800 шт
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R3780 MICROCHIP TECHNOLOGY Category: Stud mounting universal diodes
Description: Diode: rectifying; DO203AB,DO5; 1.15V
Case: DO5; DO203AB
Max. forward voltage: 1.15V
Type of diode: rectifying
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S3780 MICROCHIP TECHNOLOGY Category: Stud mounting universal diodes
Description: Diode: rectifying; DO203AB,DO5; 1.15V; 25uA
Case: DO5; DO203AB
Max. forward voltage: 1.15V
Leakage current: 25µA
Type of diode: rectifying
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 Мінімальне замовлення: 100 шт
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MIC4680-3.3YM MIC4680-3.3YM MICROCHIP TECHNOLOGY _LDO_SG.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4÷34VDC; Uout: 3.3VDC; 1.3A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4...34V DC
Output voltage: 3.3V DC
Case: SO8
Mounting: SMD
Topology: buck; buck-boost
Number of channels: 1
Kind of package: tube
Operating temperature: -40...125°C
Integrated circuit features: shutdown mode control input
Duty cycle factor: 0...97%
Frequency: 200kHz
Tolerance: ±3%
Manufacturer standard package: 95pcs.
Output current: 1.3A
на замовлення 371 шт:
термін постачання 14-30 дні (днів)
3+197.31 грн
6+170.01 грн
10+162.58 грн
16+160.93 грн
25+155.15 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MCP1257-E/MF MCP1257-E/MF MICROCHIP TECHNOLOGY 21989B.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; DFN10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: DFN10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Efficiency: 84.5%
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 120pcs.
Output current: 0.1A
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MCP1258-E/MF MCP1258-E/MF MICROCHIP TECHNOLOGY filehandler.aspx?ddocname=en026253 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; DFN10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: DFN10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 120pcs.
Output current: 0.1A
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MCP1259-E/MF MCP1259-E/MF MICROCHIP TECHNOLOGY 21989B.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; DFN10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: DFN10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 120pcs.
Output current: 0.1A
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MCP1258-E/UN MCP1258-E/UN MICROCHIP TECHNOLOGY 21989B.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; MSOP10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: MSOP10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 100pcs.
Output current: 0.1A
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 Мінімальне замовлення: 200 шт
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MCP1259-E/UN MCP1259-E/UN MICROCHIP TECHNOLOGY 21989B.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; MSOP10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: MSOP10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Efficiency: 84.5%
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 100pcs.
Output current: 0.1A
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 Мінімальне замовлення: 300 шт
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USB3320C-EZKUSB3320C-EZK
USB3320C-EZKUSB3320C-EZK
 USB3320C-EZK MICROCHIP TECHNOLOGY 00001792E.pdf Category: USB interfaces - integrated circuits
Description: IC: USB interface; ULPI,USB 2.0 HS OTG; transceiver; Hi-Speed
Type of integrated circuit: USB interface
Interface: ULPI; USB 2.0 HS OTG
Kind of integrated circuit: transceiver
USB speed: Hi-Speed
Data transfer rate: 0.48Gbps
Supply voltage: 1.8...3.3V DC
Case: VQFN32
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
Kind of package: in-tray
Manufacturer standard package: 490pcs.
на замовлення 255 шт:
термін постачання 14-30 дні (днів)
4+140.42 грн
20+128.74 грн
25+121.32 грн
Мінімальне замовлення: 4 шт
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MXSMCJ24Ae3 MXSMCJ24Ae3 MICROCHIP TECHNOLOGY msmcg_j-mxlsmcg_j.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+578.59 грн
3+422.54 грн
В кошику  од. на суму  грн.
SMCJ24AE3/TR13 SMCJ24AE3/TR13 MICROCHIP TECHNOLOGY Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
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MSMCJ24AE3/TR MSMCJ24AE3/TR MICROCHIP TECHNOLOGY Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 400 шт
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MASMCJ24A MASMCJ24A MICROCHIP TECHNOLOGY 10561-msmc-datasheet Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; DO214AB,SMC; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 200 шт
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MASMCJ24Ae3 MASMCJ24Ae3 MICROCHIP TECHNOLOGY 10561-msmc-datasheet Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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MSMCJ24A MSMCJ24A MICROCHIP TECHNOLOGY MSMCJ_Series.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 600 шт
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MSMCJ24AE3 MSMCJ24AE3 MICROCHIP TECHNOLOGY 10561-msmc-datasheet Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 400 шт
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MXSMCJ24A/TR MXSMCJ24A/TR MICROCHIP TECHNOLOGY 10561-msmc-datasheet Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 100 шт
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MXSMCJ24AE3/TR MXSMCJ24AE3/TR MICROCHIP TECHNOLOGY 10561-msmc-datasheet Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 100 шт
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MASMBJ48CA MASMBJ48CA MICROCHIP TECHNOLOGY 10560-msmb-datasheet Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3V; 7.7A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 200 шт
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MASMBJ48CAe3 MASMBJ48CAe3 MICROCHIP TECHNOLOGY 10560-msmb-datasheet Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3V; 7.7A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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 Мінімальне замовлення: 200 шт
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APT5010JVR APT5010JVR_C.pdf
APT5010JVR
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 44A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.1Ω
Pulsed drain current: 176A
Power dissipation: 450W
Technology: POWER MOS 5®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of package: tube
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3224.44 грн
В кошику  од. на суму  грн.
APT30M19JVFR APT30M19JVFR.pdf
APT30M19JVFR
Виробник: MICROCHIP TECHNOLOGY
Category: Transistor modules
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
Case: ISOTOP
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 19mΩ
Pulsed drain current: 520A
Power dissipation: 700W
Technology: POWER MOS V®
Kind of channel: enhancement
Gate-source voltage: ±30V
Mechanical mounting: screw
Kind of package: tube
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2028.16 грн
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MCP1402T-E/OT _Driver_SG.pdf
MCP1402T-E/OT
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOT23-5; 500mA; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOT23-5
Operating temperature: -40...125°C
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Output current: 0.5A
Pulse fall time: 15ns
Kind of integrated circuit: MOSFET gate driver
Operating voltage: 4.5...18V
Impulse rise time: 19ns
на замовлення 633 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+55.99 грн
9+48.69 грн
Мінімальне замовлення: 8 шт
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MCP1407-E/SN description _Driver_SG.pdf
MCP1407-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: non-inverting
Pulse fall time: 20ns
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MCP14E3-E/SN _Driver_SG.pdf
MCP14E3-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 15ns
Manufacturer standard package: 100pcs.
Kind of output: inverting
Pulse fall time: 18ns
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MCP1401T-E/OT _Driver_SG.pdf
MCP1401T-E/OT
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOT23-5; 500mA; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOT23-5
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 4.5...18V
Impulse rise time: 19ns
Manufacturer standard package: 3000pcs.
Pulse fall time: 15ns
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MCP1406-E/P description _Driver_SG.pdf
MCP1406-E/P
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Number of channels: 1
Mounting: THT
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Manufacturer standard package: 60pcs.
Output current: 6A
Kind of output: inverting
Pulse fall time: 20ns
Kind of integrated circuit: MOSFET gate driver
Operating voltage: 4.5...18V
Impulse rise time: 20ns
на замовлення 274 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+102.21 грн
60+93.26 грн
Мінімальне замовлення: 5 шт
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MCP14E10-E/SN _Driver_SG.pdf
MCP14E10-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: non-inverting
Pulse fall time: 25ns
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MCP14H2103T-E/SN
MCP14H2103T-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 70ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14E11-E/SN _Driver_SG.pdf
MCP14E11-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: complementary
Pulse fall time: 20ns
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MCP1406-E/SN description _Driver_SG.pdf
MCP1406-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: inverting
Pulse fall time: 20ns
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MCP1405-E/SN _Driver_SG.pdf
MCP1405-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Case: SO8
Mounting: SMD
Kind of package: tube
Manufacturer standard package: 100pcs.
Output current: 4.5A
Type of integrated circuit: driver
Kind of output: complementary
Operating temperature: -40...125°C
Pulse fall time: 18ns
Kind of integrated circuit: MOSFET gate driver
Number of channels: 2
Operating voltage: 4.5...18V
Impulse rise time: 15ns
на замовлення 191 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+181.31 грн
100+165.06 грн
Мінімальне замовлення: 3 шт
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MCP14A0602-E/SN _Driver_SG.pdf
MCP14A0602-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 10ns
Manufacturer standard package: 100pcs.
Kind of output: non-inverting
Pulse fall time: 10ns
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MCP14A0302-E/SN _Driver_SG.pdf
MCP14A0302-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: non-inverting
Pulse fall time: 18ns
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MCP1403-E/P _Driver_SG.pdf
MCP1403-E/P
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Number of channels: 2
Mounting: THT
Case: DIP8
Operating temperature: -40...125°C
Kind of package: tube
Manufacturer standard package: 60pcs.
Output current: 4.5A
Kind of output: inverting
Pulse fall time: 18ns
Kind of integrated circuit: MOSFET gate driver
Operating voltage: 4.5...18V
Impulse rise time: 15ns
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+245.30 грн
Мінімальне замовлення: 2 шт
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MCP14H2104T-E/SN
MCP14H2104T-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 70ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14E8-E/SN _Driver_SG.pdf
MCP14E8-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 2A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 100pcs.
Kind of output: complementary
Pulse fall time: 25ns
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MCP14E10-E/P _Driver_SG.pdf
MCP14E10-E/P
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 3A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 60pcs.
Kind of output: non-inverting
Pulse fall time: 25ns
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MCP14H2304T-E/SN
MCP14H2304T-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 70ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14LH21064T-E/SL
MCP14LH21064T-E/SL
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC14; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 100ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14LH21814T-E/SL
MCP14LH21814T-E/SL
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -2.3÷1.9A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 40ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 20ns
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MCP14LH21904T-E/SL MCP14H2103-MCP14H2104-Half-Bridge-Gate-Driver-DS60001906.pdf
MCP14LH21904T-E/SL
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC14; -4.5÷4.5A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 25ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 20ns
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MCP14LH2190T-E/SN MCP14H2103-MCP14H2104-Half-Bridge-Gate-Driver-DS60001906.pdf
MCP14LH2190T-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -4.5÷4.5A; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 25ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 20ns
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MCP14LH2101T-E/SN
MCP14LH2101T-E/SN
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC8; -600÷290mA; Ch: 2; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 70ns
Manufacturer standard package: 2500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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MCP14E6-E/P _Driver_SG.pdf
MCP14E6-E/P
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; 2A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: 2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Operating voltage: 4.5...18V
Impulse rise time: 20ns
Manufacturer standard package: 60pcs.
Kind of output: inverting
Pulse fall time: 20ns
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MCP8062136T-E/SO MCP8062136-3-Phase-Half-Bridge-Gate-Driver-DS20007073.pdf
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SOIC28; -350÷200mA; Ch: 6; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SOIC28
Output current: -0.35...0.2A
Number of channels: 6
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating voltage: 10...20V
Impulse rise time: 90ns
Manufacturer standard package: 1500pcs.
Kind of output: complementary
Pulse fall time: 35ns
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SMBJ5.0AE3/TR13 SA3-37.pdf
SMBJ5.0AE3/TR13
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 3000 шт
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MSMBJ5.0AE3 10560-msmb-datasheet
MSMBJ5.0AE3
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 667 шт
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MASMBJ5.0A 10560-msmb-datasheet
MASMBJ5.0A
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 200 шт
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MASMBJ5.0Ae3 10560-msmb-datasheet
MASMBJ5.0Ae3
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 200 шт
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MSMBJ5.0A MSMBJ_Series.pdf
MSMBJ5.0A
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 658 шт
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MSMBJ5.0A/TR 10560-msmb-datasheet
MSMBJ5.0A/TR
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 568 шт
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MSMBJ5.0AE3/TR 10560-msmb-datasheet
MSMBJ5.0AE3/TR
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4V; 65.2A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 575 шт
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SMBJ24AE3/TR13 SA3-37.pdf
SMBJ24AE3/TR13
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 3000 шт
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MASMBJ24A 10560-msmb-datasheet
MASMBJ24A
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 200 шт
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MASMBJ24AE3 RF01000+%283%29.pdf
MASMBJ24AE3
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 200 шт
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MSMBJ24A MSMBJ_Series.pdf
MSMBJ24A
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
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Мінімальне замовлення: 900 шт
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MSMBJ24A/TR 10560-msmb-datasheet
MSMBJ24A/TR
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
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MSMBJ24Ae3 RF01000+%283%29.pdf
MSMBJ24Ae3
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
MSMBJ24AE3/TR RF01000+%283%29.pdf
MSMBJ24AE3/TR
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7V; 15.4A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 800 шт
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R3780
Виробник: MICROCHIP TECHNOLOGY
Category: Stud mounting universal diodes
Description: Diode: rectifying; DO203AB,DO5; 1.15V
Case: DO5; DO203AB
Max. forward voltage: 1.15V
Type of diode: rectifying
товару немає в наявності
Мінімальне замовлення: 100 шт
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S3780
Виробник: MICROCHIP TECHNOLOGY
Category: Stud mounting universal diodes
Description: Diode: rectifying; DO203AB,DO5; 1.15V; 25uA
Case: DO5; DO203AB
Max. forward voltage: 1.15V
Leakage current: 25µA
Type of diode: rectifying
товару немає в наявності
Мінімальне замовлення: 100 шт
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MIC4680-3.3YM _LDO_SG.pdf
MIC4680-3.3YM
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4÷34VDC; Uout: 3.3VDC; 1.3A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4...34V DC
Output voltage: 3.3V DC
Case: SO8
Mounting: SMD
Topology: buck; buck-boost
Number of channels: 1
Kind of package: tube
Operating temperature: -40...125°C
Integrated circuit features: shutdown mode control input
Duty cycle factor: 0...97%
Frequency: 200kHz
Tolerance: ±3%
Manufacturer standard package: 95pcs.
Output current: 1.3A
на замовлення 371 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+197.31 грн
6+170.01 грн
10+162.58 грн
16+160.93 грн
25+155.15 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MCP1257-E/MF 21989B.pdf
MCP1257-E/MF
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; DFN10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: DFN10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Efficiency: 84.5%
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 120pcs.
Output current: 0.1A
товару немає в наявності
Мінімальне замовлення: 240 шт
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MCP1258-E/MF filehandler.aspx?ddocname=en026253
MCP1258-E/MF
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; DFN10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: DFN10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 120pcs.
Output current: 0.1A
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
MCP1259-E/MF 21989B.pdf
MCP1259-E/MF
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; DFN10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: DFN10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 120pcs.
Output current: 0.1A
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
MCP1258-E/UN 21989B.pdf
MCP1258-E/UN
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; MSOP10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: MSOP10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 100pcs.
Output current: 0.1A
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
MCP1259-E/UN 21989B.pdf
MCP1259-E/UN
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 1.8÷3.6V; Uout: 3.3V; 100mA; MSOP10; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 1.8...3.6V
Output voltage: 3.3V
Case: MSOP10
Mounting: SMD
Topology: boost; buck
Kind of package: tube
Operating temperature: -40...125°C
Efficiency: 84.5%
Application: automotive industry
Frequency: 650kHz
Operating voltage: 3.6V
Supply voltage: 1.8...3.6V
Manufacturer standard package: 100pcs.
Output current: 0.1A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
USB3320C-EZK 00001792E.pdf
USB3320C-EZKUSB3320C-EZK
USB3320C-EZKUSB3320C-EZK
Виробник: MICROCHIP TECHNOLOGY
Category: USB interfaces - integrated circuits
Description: IC: USB interface; ULPI,USB 2.0 HS OTG; transceiver; Hi-Speed
Type of integrated circuit: USB interface
Interface: ULPI; USB 2.0 HS OTG
Kind of integrated circuit: transceiver
USB speed: Hi-Speed
Data transfer rate: 0.48Gbps
Supply voltage: 1.8...3.3V DC
Case: VQFN32
Mounting: SMD
Operating temperature: -40...85°C
Number of ports: 1
Kind of package: in-tray
Manufacturer standard package: 490pcs.
на замовлення 255 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+140.42 грн
20+128.74 грн
25+121.32 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
MXSMCJ24Ae3 msmcg_j-mxlsmcg_j.pdf
MXSMCJ24Ae3
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 15.4A; unidirectional; ±5%; DO214AB
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB
Mounting: SMD
Leakage current: 1µA
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+578.59 грн
3+422.54 грн
В кошику  од. на суму  грн.
SMCJ24AE3/TR13
SMCJ24AE3/TR13
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Manufacturer standard package: 3000pcs.
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
MSMCJ24AE3/TR
MSMCJ24AE3/TR
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
MASMCJ24A 10561-msmc-datasheet
MASMCJ24A
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; DO214AB,SMC; Ch: 1; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
MASMCJ24Ae3 10561-msmc-datasheet
MASMCJ24Ae3
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
MSMCJ24A MSMCJ_Series.pdf
MSMCJ24A
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 600 шт
В кошику  од. на суму  грн.
MSMCJ24AE3 10561-msmc-datasheet
MSMCJ24AE3
Виробник: MICROCHIP TECHNOLOGY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
MXSMCJ24A/TR 10561-msmc-datasheet
MXSMCJ24A/TR
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
MXSMCJ24AE3/TR 10561-msmc-datasheet
MXSMCJ24AE3/TR
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7V; 38.6A; bidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
MASMBJ48CA 10560-msmb-datasheet
MASMBJ48CA
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3V; 7.7A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
MASMBJ48CAe3 10560-msmb-datasheet
MASMBJ48CAe3
Виробник: MICROCHIP TECHNOLOGY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3V; 7.7A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Operating temperature: -65...150°C
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.