Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (343038) > Сторінка 5709 з 5718
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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APT5024BFLLG | MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
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APT5024BLLG | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
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APT5024BVRG | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
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APT5024SLLG | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 265W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 43nC Kind of package: tube Kind of channel: enhancement |
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APT5024SVRG | MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 22A Pulsed drain current: 88A Power dissipation: 280W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 0.21µC Kind of package: tube Kind of channel: enhancement |
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MCP14A0302-E/MS | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 1; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 3A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 15ns Pulse fall time: 13ns Kind of package: tube Kind of output: non-inverting |
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MCP14A0454-E/SN | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: non-inverting |
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MCP14A0153-E/MS | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 1.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 18.5ns Pulse fall time: 17ns Kind of package: tube |
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MCP14A0301-E/MS | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 1; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 3A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 15ns Pulse fall time: 13ns Kind of package: tube Kind of output: inverting |
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| MCP14A0303T-E/MNYVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; TDFN8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: TDFN8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Kind of package: reel; tape Kind of output: inverting Application: automotive industry |
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| MCP14A0303T-E/MSVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Kind of package: reel; tape Kind of output: inverting Application: automotive industry |
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| MCP14A0303T-E/SNVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Kind of package: reel; tape Kind of output: inverting Application: automotive industry |
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| MCP14A0304T-E/MNYVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; TDFN8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: TDFN8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Kind of package: reel; tape Kind of output: non-inverting Application: automotive industry |
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| MCP14A0304T-E/MSVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Kind of package: reel; tape Kind of output: non-inverting Application: automotive industry |
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| MCP14A0304T-E/SNVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Kind of package: reel; tape Kind of output: non-inverting Application: automotive industry |
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| MCP14A0305T-E/MNYVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; TDFN8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: TDFN8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Kind of package: reel; tape Kind of output: complementary Application: automotive industry |
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| MCP14A0305T-E/MSVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Kind of package: reel; tape Kind of output: complementary Application: automotive industry |
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| MCP14A0305T-E/SNVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 3A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Kind of package: reel; tape Kind of output: complementary Application: automotive industry |
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MCP14A0451-E/MS | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 1; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 4.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 9.5ns Pulse fall time: 9ns Kind of package: tube Kind of output: inverting |
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MCP14A0451-E/SN | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 1; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 4.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 9.5ns Pulse fall time: 9ns Kind of package: tube Kind of output: inverting |
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MCP14A0452-E/SN | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 1; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 4.5A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 9.5ns Pulse fall time: 9ns Kind of package: tube Kind of output: non-inverting |
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| MCP14A0453-E/MNY | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: TDFN8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: inverting |
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MCP14A0453-E/MS | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: inverting |
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MCP14A0453-E/SN | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: inverting |
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| MCP14A0453T-E/MNYVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: TDFN8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: inverting |
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| MCP14A0453T-E/MSVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: inverting |
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| MCP14A0453T-E/SNVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: inverting |
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| MCP14A0454-E/MNY | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: TDFN8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: non-inverting |
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MCP14A0454-E/MS | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: non-inverting |
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| MCP14A0454T-E/MNYVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: TDFN8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: non-inverting |
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| MCP14A0454T-E/MSVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: non-inverting |
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| MCP14A0454T-E/SNVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: non-inverting |
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| MCP14A0455-E/MNY | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: TDFN8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: complementary |
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MCP14A0455-E/MS | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: tube Kind of output: complementary |
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| MCP14A0455T-E/MNYVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: TDFN8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: complementary |
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| MCP14A0455T-E/MSVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: complementary |
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| MCP14A0455T-E/SNVAO | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 4.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 12ns Pulse fall time: 12ns Kind of package: reel; tape Kind of output: complementary |
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MCP14A0602-E/MS | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; MSOP8; 6A; Ch: 1; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: MSOP8 Output current: 6A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 10ns Pulse fall time: 10ns Kind of package: tube Kind of output: non-inverting |
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MCP14A0602T-E/SN | MICROCHIP TECHNOLOGY |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; 6A; Ch: 1; 4.5÷18V Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: 6A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Operating voltage: 4.5...18V Impulse rise time: 10ns Pulse fall time: 10ns Kind of package: reel; tape Kind of output: non-inverting |
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SST39LF020-55-4C-NHE | MICROCHIP TECHNOLOGY |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 8MbFLASH; 1024x8bit; 55ns; PLCC32; parallel; tube Kind of interface: parallel Case: PLCC32 Kind of package: tube Mounting: SMD Memory organisation: 1024x8bit Operating temperature: 0...70°C Access time: 55ns Operating voltage: 3...3.6V Memory: 8Mb FLASH Kind of memory: NOR Type of integrated circuit: FLASH memory |
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SST39SF010A-70-4I-NHE-T | MICROCHIP TECHNOLOGY |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 1MbFLASH; 128kx8bit; 70ns; PLCC32; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Mb FLASH Memory organisation: 128kx8bit Operating voltage: 4.5...5.5V Access time: 70ns Case: PLCC32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
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SST39SF020A-70-4I-NHE | MICROCHIP TECHNOLOGY |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2MbFLASH; 256kx8bit; 70ns; PLCC32; parallel; tube Kind of interface: parallel Case: PLCC32 Kind of package: tube Mounting: SMD Memory organisation: 256kx8bit Operating temperature: -40...85°C Access time: 70ns Operating voltage: 4.5...5.5V Memory: 2Mb FLASH Kind of memory: NOR Type of integrated circuit: FLASH memory |
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SST39SF020A-70-4I-NHE-T | MICROCHIP TECHNOLOGY |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 2MbFLASH; 256kx8bit; 70ns; PLCC32; parallel Kind of interface: parallel Case: PLCC32 Kind of package: reel; tape Mounting: SMD Memory organisation: 256kx8bit Operating temperature: -40...85°C Access time: 70ns Operating voltage: 4.5...5.5V Memory: 2Mb FLASH Kind of memory: NOR Type of integrated circuit: FLASH memory |
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MCP1602-250I/MF | MICROCHIP TECHNOLOGY |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 2.5VDC; 0.5A; DFN8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 2.7...5.5V DC Output voltage: 2.5V DC Output current: 0.5A Case: DFN8 Mounting: SMD Frequency: 1.6...2.4MHz Topology: buck Number of channels: 1 Operating temperature: -40...85°C Kind of package: tube Integrated circuit features: PG output; shutdown mode control input Efficiency: 90% |
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| MSC010SDA070S | MICROCHIP TECHNOLOGY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D3PAK,TO268; SiC; SMD; 700V; 10A; tube Type of diode: Schottky rectifying Case: D3PAK; TO268 Technology: SiC Mounting: SMD Max. off-state voltage: 700V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.8V Leakage current: 0.2mA Max. forward impulse current: 58A Kind of package: tube Power dissipation: 36W |
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| MIC2211-GJYML-TR | MICROCHIP TECHNOLOGY |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,2.5V; 0.15÷0.3A Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.42V Output voltage: 1.8V; 2.5V Output current: 0.15...0.3A Case: MLF10 Mounting: SMD Manufacturer series: MIC2211 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 2 Input voltage: 2.25...5.5V |
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| APT65GP60JDQ2 | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube Collector current: 60A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 250A Kind of package: tube Max. off-state voltage: 0.6kV Technology: POWER MOS 7®; PT Type of semiconductor module: IGBT Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor |
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| APT60GA60JD60 | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube Collector current: 60A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 178A Kind of package: tube Max. off-state voltage: 0.6kV Technology: POWER MOS 8®; PT Application: for UPS Type of semiconductor module: IGBT Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor |
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| APT65GP60J | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube Collector current: 60A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 250A Kind of package: tube Max. off-state voltage: 0.6kV Technology: POWER MOS 7®; PT Type of semiconductor module: IGBT Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor |
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APT20GN60BG | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 24A Power dissipation: 136W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 19ns Turn-off time: 290ns Technology: Field Stop |
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| MCP112-195I/TO | MICROCHIP TECHNOLOGY |
Category: Reference voltage sources - circuits Description: IC: supervisor circuit; push-pull; Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR); voltage detector Kind of RESET output: push-pull Active logical level: low Supply voltage: 1...5.5V DC Case: TO92 Operating temperature: -40...85°C Mounting: THT Threshold on-voltage: 1.9V Kind of package: bulk Quiescent current: 1µA |
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MCP4362-103E/ST | MICROCHIP TECHNOLOGY |
Category: Digital potentiometers Description: IC: rheostat; 10kΩ; SPI; 8bit; TSSOP14; SMD; Ch: 4; 2.7÷5.5V; tube Kind of package: tube Case: TSSOP14 Interface: SPI Kind of memory: non-volatile Type of integrated circuit: rheostat Mounting: SMD Operating temperature: -40...125°C Max DNL: ±0.5LSB Max INL: ±1LSB Number of channels: 4 Supply voltage: 2.7...5.5V Converter resolution: 8bit Number of positions: 256 Resistance: 10kΩ |
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MCP1602-120I/MS | MICROCHIP TECHNOLOGY |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 1.2VDC; 0.5A; MSOP8 Kind of package: tube Kind of integrated circuit: DC/DC converter Case: MSOP8 Integrated circuit features: PG output; shutdown mode control input Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -40...85°C Output current: 0.5A Number of channels: 1 Output voltage: 1.2V DC Input voltage: 2.7...5.5V DC Efficiency: 90% Frequency: 1.6...2.4MHz Topology: buck |
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MCP4562-103E/MS | MICROCHIP TECHNOLOGY |
 Category: Digital potentiometersDescription: IC: rheostat; 10kΩ; I2C; 8bit; MSOP8; SMD; Ch: 1; 2.7÷5.5V; tube Kind of package: tube Case: MSOP8 Interface: I2C Kind of memory: non-volatile Type of integrated circuit: rheostat Mounting: SMD Operating temperature: -40...125°C Max DNL: ±0.5LSB Max INL: ±1LSB Number of channels: 1 Supply voltage: 2.7...5.5V Converter resolution: 8bit Number of positions: 256 Resistance: 10kΩ |
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MCP4342-103E/ST | MICROCHIP TECHNOLOGY |
Category: Digital potentiometers Description: IC: rheostat; 10kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 2.7÷5.5V; tube Kind of package: tube Case: TSSOP14 Interface: SPI Kind of memory: non-volatile Type of integrated circuit: rheostat Mounting: SMD Operating temperature: -40...125°C Max DNL: ±0.375LSB Max INL: ±0.8LSB Number of channels: 4 Supply voltage: 2.7...5.5V Converter resolution: 7bit Number of positions: 128 Resistance: 10kΩ |
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MCP1602-150I/MS | MICROCHIP TECHNOLOGY |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 1.5VDC; 0.5A; MSOP8 Kind of package: tube Kind of integrated circuit: DC/DC converter Case: MSOP8 Integrated circuit features: PG output; shutdown mode control input Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -40...85°C Output current: 0.5A Number of channels: 1 Output voltage: 1.5V DC Input voltage: 2.7...5.5V DC Efficiency: 90% Frequency: 1.6...2.4MHz Topology: buck |
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MCP1602-180I/MS | MICROCHIP TECHNOLOGY |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 1.8VDC; 0.5A; MSOP8 Kind of package: tube Kind of integrated circuit: DC/DC converter Case: MSOP8 Integrated circuit features: PG output; shutdown mode control input Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -40...85°C Output current: 0.5A Number of channels: 1 Output voltage: 1.8V DC Input voltage: 2.7...5.5V DC Efficiency: 90% Frequency: 1.6...2.4MHz Topology: buck |
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MCP4332-103E/ST | MICROCHIP TECHNOLOGY |
Category: Digital potentiometers Description: IC: rheostat; 10kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 1.8÷5.5V; tube Kind of package: tube Case: TSSOP14 Interface: SPI Kind of memory: volatile Type of integrated circuit: rheostat Mounting: SMD Operating temperature: -40...125°C Max DNL: ±0.375LSB Max INL: ±0.8LSB Number of channels: 4 Supply voltage: 1.8...5.5V Converter resolution: 7bit Number of positions: 128 Resistance: 10kΩ |
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MCP4332-104E/ST | MICROCHIP TECHNOLOGY |
Category: Digital potentiometers Description: IC: rheostat; 100kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 1.8÷5.5V; tube Kind of package: tube Case: TSSOP14 Interface: SPI Kind of memory: volatile Type of integrated circuit: rheostat Mounting: SMD Operating temperature: -40...125°C Max DNL: ±0.375LSB Max INL: ±0.8LSB Number of channels: 4 Supply voltage: 1.8...5.5V Converter resolution: 7bit Number of positions: 128 Resistance: 100kΩ |
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MCP4342-104E/ST | MICROCHIP TECHNOLOGY |
Category: Digital potentiometers Description: IC: rheostat; 100kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 2.7÷5.5V; tube Kind of package: tube Case: TSSOP14 Interface: SPI Kind of memory: non-volatile Type of integrated circuit: rheostat Mounting: SMD Operating temperature: -40...125°C Max DNL: ±0.375LSB Max INL: ±0.8LSB Number of channels: 4 Supply voltage: 2.7...5.5V Converter resolution: 7bit Number of positions: 128 Resistance: 100kΩ |
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| APT5024BFLLG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
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| APT5024BLLG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
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| APT5024BVRG |
Виробник: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
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| APT5024SLLG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 265W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
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| APT5024SVRG |
Виробник: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 280W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
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| MCP14A0302-E/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 15ns
Pulse fall time: 13ns
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 15ns
Pulse fall time: 13ns
Kind of package: tube
Kind of output: non-inverting
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| MCP14A0454-E/SN |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: non-inverting
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| MCP14A0153-E/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 1.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 18.5ns
Pulse fall time: 17ns
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 1.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 18.5ns
Pulse fall time: 17ns
Kind of package: tube
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| MCP14A0301-E/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 15ns
Pulse fall time: 13ns
Kind of package: tube
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 15ns
Pulse fall time: 13ns
Kind of package: tube
Kind of output: inverting
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| MCP14A0303T-E/MNYVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: inverting
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: inverting
Application: automotive industry
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| MCP14A0303T-E/MSVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: inverting
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: inverting
Application: automotive industry
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| MCP14A0303T-E/SNVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: inverting
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: inverting
Application: automotive industry
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| MCP14A0304T-E/MNYVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: non-inverting
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: non-inverting
Application: automotive industry
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| MCP14A0304T-E/MSVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: non-inverting
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: non-inverting
Application: automotive industry
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| MCP14A0304T-E/SNVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: non-inverting
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: non-inverting
Application: automotive industry
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| MCP14A0305T-E/MNYVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: complementary
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: complementary
Application: automotive industry
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| MCP14A0305T-E/MSVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: complementary
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: complementary
Application: automotive industry
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| MCP14A0305T-E/SNVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: complementary
Application: automotive industry
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 3A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 3A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Kind of package: reel; tape
Kind of output: complementary
Application: automotive industry
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| MCP14A0451-E/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 9.5ns
Pulse fall time: 9ns
Kind of package: tube
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 9.5ns
Pulse fall time: 9ns
Kind of package: tube
Kind of output: inverting
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| MCP14A0451-E/SN |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 9.5ns
Pulse fall time: 9ns
Kind of package: tube
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 9.5ns
Pulse fall time: 9ns
Kind of package: tube
Kind of output: inverting
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| MCP14A0452-E/SN |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 9.5ns
Pulse fall time: 9ns
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 9.5ns
Pulse fall time: 9ns
Kind of package: tube
Kind of output: non-inverting
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| MCP14A0453-E/MNY |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
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| MCP14A0453-E/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
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| MCP14A0453-E/SN |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: inverting
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| MCP14A0453T-E/MNYVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
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| MCP14A0453T-E/MSVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
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| MCP14A0453T-E/SNVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: inverting
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| MCP14A0454-E/MNY |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: non-inverting
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| MCP14A0454-E/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: non-inverting
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| MCP14A0454T-E/MNYVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: non-inverting
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| MCP14A0454T-E/MSVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: non-inverting
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| MCP14A0454T-E/SNVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: non-inverting
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| MCP14A0455-E/MNY |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: complementary
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: complementary
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| MCP14A0455-E/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: complementary
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: tube
Kind of output: complementary
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| MCP14A0455T-E/MNYVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: complementary
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; TDFN8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: TDFN8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: complementary
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| MCP14A0455T-E/MSVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: complementary
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: complementary
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| MCP14A0455T-E/SNVAO |
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: complementary
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 4.5A; Ch: 2; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 12ns
Pulse fall time: 12ns
Kind of package: reel; tape
Kind of output: complementary
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| MCP14A0602-E/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 10ns
Pulse fall time: 10ns
Kind of package: tube
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; MSOP8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: MSOP8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 10ns
Pulse fall time: 10ns
Kind of package: tube
Kind of output: non-inverting
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| MCP14A0602T-E/SN |
|
Виробник: MICROCHIP TECHNOLOGY
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 10ns
Pulse fall time: 10ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; 6A; Ch: 1; 4.5÷18V
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: 6A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Operating voltage: 4.5...18V
Impulse rise time: 10ns
Pulse fall time: 10ns
Kind of package: reel; tape
Kind of output: non-inverting
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| SST39LF020-55-4C-NHE |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; 1024x8bit; 55ns; PLCC32; parallel; tube
Kind of interface: parallel
Case: PLCC32
Kind of package: tube
Mounting: SMD
Memory organisation: 1024x8bit
Operating temperature: 0...70°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; 1024x8bit; 55ns; PLCC32; parallel; tube
Kind of interface: parallel
Case: PLCC32
Kind of package: tube
Mounting: SMD
Memory organisation: 1024x8bit
Operating temperature: 0...70°C
Access time: 55ns
Operating voltage: 3...3.6V
Memory: 8Mb FLASH
Kind of memory: NOR
Type of integrated circuit: FLASH memory
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| SST39SF010A-70-4I-NHE-T |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1MbFLASH; 128kx8bit; 70ns; PLCC32; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Mb FLASH
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Access time: 70ns
Case: PLCC32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1MbFLASH; 128kx8bit; 70ns; PLCC32; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Mb FLASH
Memory organisation: 128kx8bit
Operating voltage: 4.5...5.5V
Access time: 70ns
Case: PLCC32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| SST39SF020A-70-4I-NHE |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2MbFLASH; 256kx8bit; 70ns; PLCC32; parallel; tube
Kind of interface: parallel
Case: PLCC32
Kind of package: tube
Mounting: SMD
Memory organisation: 256kx8bit
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 4.5...5.5V
Memory: 2Mb FLASH
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2MbFLASH; 256kx8bit; 70ns; PLCC32; parallel; tube
Kind of interface: parallel
Case: PLCC32
Kind of package: tube
Mounting: SMD
Memory organisation: 256kx8bit
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 4.5...5.5V
Memory: 2Mb FLASH
Kind of memory: NOR
Type of integrated circuit: FLASH memory
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| SST39SF020A-70-4I-NHE-T |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2MbFLASH; 256kx8bit; 70ns; PLCC32; parallel
Kind of interface: parallel
Case: PLCC32
Kind of package: reel; tape
Mounting: SMD
Memory organisation: 256kx8bit
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 4.5...5.5V
Memory: 2Mb FLASH
Kind of memory: NOR
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2MbFLASH; 256kx8bit; 70ns; PLCC32; parallel
Kind of interface: parallel
Case: PLCC32
Kind of package: reel; tape
Mounting: SMD
Memory organisation: 256kx8bit
Operating temperature: -40...85°C
Access time: 70ns
Operating voltage: 4.5...5.5V
Memory: 2Mb FLASH
Kind of memory: NOR
Type of integrated circuit: FLASH memory
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| MCP1602-250I/MF |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 2.5VDC; 0.5A; DFN8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 2.5V DC
Output current: 0.5A
Case: DFN8
Mounting: SMD
Frequency: 1.6...2.4MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Integrated circuit features: PG output; shutdown mode control input
Efficiency: 90%
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 2.5VDC; 0.5A; DFN8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 2.7...5.5V DC
Output voltage: 2.5V DC
Output current: 0.5A
Case: DFN8
Mounting: SMD
Frequency: 1.6...2.4MHz
Topology: buck
Number of channels: 1
Operating temperature: -40...85°C
Kind of package: tube
Integrated circuit features: PG output; shutdown mode control input
Efficiency: 90%
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| MSC010SDA070S |
|
Виробник: MICROCHIP TECHNOLOGY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D3PAK,TO268; SiC; SMD; 700V; 10A; tube
Type of diode: Schottky rectifying
Case: D3PAK; TO268
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Leakage current: 0.2mA
Max. forward impulse current: 58A
Kind of package: tube
Power dissipation: 36W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D3PAK,TO268; SiC; SMD; 700V; 10A; tube
Type of diode: Schottky rectifying
Case: D3PAK; TO268
Technology: SiC
Mounting: SMD
Max. off-state voltage: 700V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Leakage current: 0.2mA
Max. forward impulse current: 58A
Kind of package: tube
Power dissipation: 36W
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| MIC2211-GJYML-TR |
|
Виробник: MICROCHIP TECHNOLOGY
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,2.5V; 0.15÷0.3A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 1.8V; 2.5V
Output current: 0.15...0.3A
Case: MLF10
Mounting: SMD
Manufacturer series: MIC2211
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 2
Input voltage: 2.25...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V,2.5V; 0.15÷0.3A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 1.8V; 2.5V
Output current: 0.15...0.3A
Case: MLF10
Mounting: SMD
Manufacturer series: MIC2211
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 2
Input voltage: 2.25...5.5V
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| APT65GP60JDQ2 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Kind of package: tube
Max. off-state voltage: 0.6kV
Technology: POWER MOS 7®; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Kind of package: tube
Max. off-state voltage: 0.6kV
Technology: POWER MOS 7®; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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| APT60GA60JD60 |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 178A
Kind of package: tube
Max. off-state voltage: 0.6kV
Technology: POWER MOS 8®; PT
Application: for UPS
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 178A
Kind of package: tube
Max. off-state voltage: 0.6kV
Technology: POWER MOS 8®; PT
Application: for UPS
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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| APT65GP60J |
|
Виробник: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Kind of package: tube
Max. off-state voltage: 0.6kV
Technology: POWER MOS 7®; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 60A; SOT227B; tube
Collector current: 60A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Kind of package: tube
Max. off-state voltage: 0.6kV
Technology: POWER MOS 7®; PT
Type of semiconductor module: IGBT
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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| APT20GN60BG |
|
Виробник: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Technology: Field Stop
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 24A; 136W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 24A
Power dissipation: 136W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Turn-on time: 19ns
Turn-off time: 290ns
Technology: Field Stop
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| MCP112-195I/TO |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Reference voltage sources - circuits
Description: IC: supervisor circuit; push-pull; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: THT
Threshold on-voltage: 1.9V
Kind of package: bulk
Quiescent current: 1µA
Category: Reference voltage sources - circuits
Description: IC: supervisor circuit; push-pull; Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR); voltage detector
Kind of RESET output: push-pull
Active logical level: low
Supply voltage: 1...5.5V DC
Case: TO92
Operating temperature: -40...85°C
Mounting: THT
Threshold on-voltage: 1.9V
Kind of package: bulk
Quiescent current: 1µA
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| MCP4362-103E/ST |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Digital potentiometers
Description: IC: rheostat; 10kΩ; SPI; 8bit; TSSOP14; SMD; Ch: 4; 2.7÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: non-volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.5LSB
Max INL: ±1LSB
Number of channels: 4
Supply voltage: 2.7...5.5V
Converter resolution: 8bit
Number of positions: 256
Resistance: 10kΩ
Category: Digital potentiometers
Description: IC: rheostat; 10kΩ; SPI; 8bit; TSSOP14; SMD; Ch: 4; 2.7÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: non-volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.5LSB
Max INL: ±1LSB
Number of channels: 4
Supply voltage: 2.7...5.5V
Converter resolution: 8bit
Number of positions: 256
Resistance: 10kΩ
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| MCP1602-120I/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 1.2VDC; 0.5A; MSOP8
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Case: MSOP8
Integrated circuit features: PG output; shutdown mode control input
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.5A
Number of channels: 1
Output voltage: 1.2V DC
Input voltage: 2.7...5.5V DC
Efficiency: 90%
Frequency: 1.6...2.4MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 1.2VDC; 0.5A; MSOP8
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Case: MSOP8
Integrated circuit features: PG output; shutdown mode control input
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.5A
Number of channels: 1
Output voltage: 1.2V DC
Input voltage: 2.7...5.5V DC
Efficiency: 90%
Frequency: 1.6...2.4MHz
Topology: buck
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| MCP4562-103E/MS | |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Digital potentiometers
Description: IC: rheostat; 10kΩ; I2C; 8bit; MSOP8; SMD; Ch: 1; 2.7÷5.5V; tube
Kind of package: tube
Case: MSOP8
Interface: I2C
Kind of memory: non-volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.5LSB
Max INL: ±1LSB
Number of channels: 1
Supply voltage: 2.7...5.5V
Converter resolution: 8bit
Number of positions: 256
Resistance: 10kΩ
Category: Digital potentiometers
Description: IC: rheostat; 10kΩ; I2C; 8bit; MSOP8; SMD; Ch: 1; 2.7÷5.5V; tube
Kind of package: tube
Case: MSOP8
Interface: I2C
Kind of memory: non-volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.5LSB
Max INL: ±1LSB
Number of channels: 1
Supply voltage: 2.7...5.5V
Converter resolution: 8bit
Number of positions: 256
Resistance: 10kΩ
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| MCP4342-103E/ST |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Digital potentiometers
Description: IC: rheostat; 10kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 2.7÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: non-volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.375LSB
Max INL: ±0.8LSB
Number of channels: 4
Supply voltage: 2.7...5.5V
Converter resolution: 7bit
Number of positions: 128
Resistance: 10kΩ
Category: Digital potentiometers
Description: IC: rheostat; 10kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 2.7÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: non-volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.375LSB
Max INL: ±0.8LSB
Number of channels: 4
Supply voltage: 2.7...5.5V
Converter resolution: 7bit
Number of positions: 128
Resistance: 10kΩ
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| MCP1602-150I/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 1.5VDC; 0.5A; MSOP8
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Case: MSOP8
Integrated circuit features: PG output; shutdown mode control input
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.5A
Number of channels: 1
Output voltage: 1.5V DC
Input voltage: 2.7...5.5V DC
Efficiency: 90%
Frequency: 1.6...2.4MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 1.5VDC; 0.5A; MSOP8
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Case: MSOP8
Integrated circuit features: PG output; shutdown mode control input
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.5A
Number of channels: 1
Output voltage: 1.5V DC
Input voltage: 2.7...5.5V DC
Efficiency: 90%
Frequency: 1.6...2.4MHz
Topology: buck
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| MCP1602-180I/MS |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 1.8VDC; 0.5A; MSOP8
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Case: MSOP8
Integrated circuit features: PG output; shutdown mode control input
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.5A
Number of channels: 1
Output voltage: 1.8V DC
Input voltage: 2.7...5.5V DC
Efficiency: 90%
Frequency: 1.6...2.4MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 2.7÷5.5VDC; Uout: 1.8VDC; 0.5A; MSOP8
Kind of package: tube
Kind of integrated circuit: DC/DC converter
Case: MSOP8
Integrated circuit features: PG output; shutdown mode control input
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -40...85°C
Output current: 0.5A
Number of channels: 1
Output voltage: 1.8V DC
Input voltage: 2.7...5.5V DC
Efficiency: 90%
Frequency: 1.6...2.4MHz
Topology: buck
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| MCP4332-103E/ST |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Digital potentiometers
Description: IC: rheostat; 10kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 1.8÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.375LSB
Max INL: ±0.8LSB
Number of channels: 4
Supply voltage: 1.8...5.5V
Converter resolution: 7bit
Number of positions: 128
Resistance: 10kΩ
Category: Digital potentiometers
Description: IC: rheostat; 10kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 1.8÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.375LSB
Max INL: ±0.8LSB
Number of channels: 4
Supply voltage: 1.8...5.5V
Converter resolution: 7bit
Number of positions: 128
Resistance: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| MCP4332-104E/ST |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Digital potentiometers
Description: IC: rheostat; 100kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 1.8÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.375LSB
Max INL: ±0.8LSB
Number of channels: 4
Supply voltage: 1.8...5.5V
Converter resolution: 7bit
Number of positions: 128
Resistance: 100kΩ
Category: Digital potentiometers
Description: IC: rheostat; 100kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 1.8÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.375LSB
Max INL: ±0.8LSB
Number of channels: 4
Supply voltage: 1.8...5.5V
Converter resolution: 7bit
Number of positions: 128
Resistance: 100kΩ
товару немає в наявності
В кошику
од. на суму грн.
| MCP4342-104E/ST |
|
Виробник: MICROCHIP TECHNOLOGY
Category: Digital potentiometers
Description: IC: rheostat; 100kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 2.7÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: non-volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.375LSB
Max INL: ±0.8LSB
Number of channels: 4
Supply voltage: 2.7...5.5V
Converter resolution: 7bit
Number of positions: 128
Resistance: 100kΩ
Category: Digital potentiometers
Description: IC: rheostat; 100kΩ; SPI; 7bit; TSSOP14; SMD; Ch: 4; 2.7÷5.5V; tube
Kind of package: tube
Case: TSSOP14
Interface: SPI
Kind of memory: non-volatile
Type of integrated circuit: rheostat
Mounting: SMD
Operating temperature: -40...125°C
Max DNL: ±0.375LSB
Max INL: ±0.8LSB
Number of channels: 4
Supply voltage: 2.7...5.5V
Converter resolution: 7bit
Number of positions: 128
Resistance: 100kΩ
товару немає в наявності
В кошику
од. на суму грн.