Продукція > tsm
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| TSM60NC165CI C0G | Taiwan Semiconductor | LDO Voltage Regulators 600V, 24A, Single N-Channel Power MOSFET | товару немає в наявності | Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC196CF C0G | Taiwan Semiconductor | MOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs | товару немає в наявності | Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC196CI C0G | Taiwan Semiconductor Corporation | Description: 600V, 20A, SINGLE N-CHANNEL POWE Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: ITO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V | на замовлення 3766 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC196CIT C0G | Taiwan Semiconductor | MOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs | товару немає в наявності | Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC196CM2 RNG | Taiwan Semiconductor Corporation | Description: 600V, 28A, SINGLE N-CHANNEL POWE Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263AB (D2PAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 152W (Tc) | на замовлення 2397 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC196CM2 RNG | Taiwan Semiconductor Corporation | Description: 600V, 28A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263AB (D2PAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 152W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC1R5CH C5G | Taiwan Semiconductor Corporation | Description: 600V, 3A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube | на замовлення 14990 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC1R5CP ROG | Taiwan Semiconductor Corporation | Description: 600V, 3A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 55W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) | на замовлення 10355 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC1R5CP ROG | Taiwan Semiconductor Corporation | Description: 600V, 3A, SINGLE N-CHANNEL POWER Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 55W (Tc) | на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC1R5CP ROG | Taiwan Semiconductor | MOSFET 600V, 3A, Single N-Channel Power MOSFET | на замовлення 4995 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC390CH C5G | Taiwan Semiconductor | MOSFETs 600V, 11A, Single N-Channel Power MOSFET | на замовлення 3689 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC390CH C5G | Taiwan Semiconductor Corporation | Description: 600V, 11A, SINGLE N-CHANNEL POWE Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V | на замовлення 12981 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC390CI C0G | Taiwan Semiconductor Corporation | Description: 600V, 11A, SINGLE N-CHANNEL POWE Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: ITO-220 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 78W (Tc) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC390CI C0G | Taiwan Semiconductor | MOSFETs 600V, 11A, Single N-Channel Power MOSFET | на замовлення 3990 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC390CP ROG | Taiwan Semiconductor Corporation | Description: 600V, 11A, SINGLE N-CHANNEL POWE Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC390CP ROG | Taiwan Semiconductor | MOSFETs 600V, 11A, Single N-Channel Power MOSFET | на замовлення 4775 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC390CP ROG | Taiwan Semiconductor Corporation | Description: 600V, 11A, SINGLE N-CHANNEL POWE Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC620CH C5G | Taiwan Semiconductor Corporation | Description: 600V, 7A, SINGLE N-CHANNEL POWER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 501 pF @ 300 V | на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC620CI C0G | Taiwan Semiconductor | MOSFET 600V, 7A, Single N-Channel Power MOSFET | на замовлення 4000 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC620CI C0G | Taiwan Semiconductor Corporation | Description: 600V, 7A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ITO-220 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube | на замовлення 3990 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC620CP ROG | Taiwan Semiconductor Corporation | Description: 600V, 7A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC620CP ROG | Taiwan Semiconductor | MOSFETs 600V, 7A, Single N-Channel Power MOSFET | на замовлення 7500 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC620CP ROG | Taiwan Semiconductor Corporation | Description: 600V, 7A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC980CH C5G | Taiwan Semiconductor | MOSFET 600V, 4A, Single N-Channel Power MOSFET | на замовлення 3750 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NC980CH C5G | Taiwan Semiconductor Corporation | Description: 600V, 4A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA | на замовлення 13114 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC980CP ROG | Taiwan Semiconductor Corporation | Description: 600V, 4A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC980CP ROG | Taiwan Semiconductor Corporation | Description: 600V, 4A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 57W (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NC980CP ROG | Taiwan Semiconductor | MOSFETs 600V, 4A, Single N-Channel Power MOSFET | на замовлення 4477 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE048PW C0G | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 6V @ 4.6mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V | на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE048PW C0G | Taiwan Semiconductor | MOSFETs 600V, 61A, Single N-Channel High Voltage MOSFETs | на замовлення 300 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE069CIT C0G | Taiwan Semiconductor | Trans MOSFET N-CH 600V 24A 3-Pin(3+Tab) ITO-220TL | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE069CIT C0G | Taiwan Semiconductor | MOSFETs 600V, 24A, Single N-Channel High Voltage MOSFETs | товару немає в наявності | Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE069CIT C0G | TAIWAN SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 89W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 69mΩ Mounting: THT Gate charge: 89nC Kind of package: tube Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE069CIT C0G | Taiwan Semiconductor | Trans MOSFET N-CH 600V 24A 3-Pin(3+Tab) ITO-220TL | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE069CIT C0G | Taiwan Semiconductor | Trans MOSFET N-CH 600V 24A 3-Pin(3+Tab) ITO-220TL | товару немає в наявності | Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE069CIT C0G | Taiwan Semiconductor Corporation | Description: 600V, 24A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 6V @ 3.5mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE069PW C0G | Taiwan Semiconductor | Trans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-247 | на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE069PW C0G | Taiwan Semiconductor Corporation | Description: 600V, 51A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 6V @ 3.5mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V | на замовлення 295 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE069PW C0G | Taiwan Semiconductor | MOSFETs 600V, 51A, Single N-Channel High Voltage MOSFETs | на замовлення 300 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE069PW C0G | TAIWAN SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Power dissipation: 417W Case: TO247 Gate-source voltage: ±30V On-state resistance: 69mΩ Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE069PW C0G | Taiwan Semiconductor | Trans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-247 | на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE084CIT C0G | Taiwan Semiconductor Corporation | Description: 600V, 21A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 7A, 12V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.9mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 300 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE084CIT C0G | TAIWAN SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 83W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 84mΩ Mounting: THT Gate charge: 69nC Kind of package: tube Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE084PW C0G | Taiwan Semiconductor Corporation | Description: 600V, 42A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 14A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.9mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 300 V | на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE110CE RVG | Taiwan Semiconductor | MOSFETs 600V, 27A, Single N-Channel High Voltage MOSFETs, PDFN88 | товару немає в наявності | Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE110CE RVG | Taiwan Semiconductor Corporation | Description: 600V, 27A, SINGLE N-CHANNEL HIGH Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 6V @ 2.5mA Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Tape & Reel (TR) | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE110CE RVG | Taiwan Semiconductor Corporation | Description: 600V, 27A, SINGLE N-CHANNEL HIGH Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 6V @ 2.5mA Power Dissipation (Max): 178W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) | на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE110CIT C0G | Taiwan Semiconductor Corporation | Description: 600V, 17A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 5.6A, 12V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.5mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 300 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE110CIT C0G | Taiwan Semiconductor | MOSFET 600V, 17A, Single N-Channel High Voltage MOSFETs | товару немає в наявності | Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE110TL RAG | Taiwan Semiconductor Corporation | Description: 600V, 30A, SINGLE N-CHANNEL HIGH Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 12V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.5mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 300 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE110TL RAG | Taiwan Semiconductor Corporation | Description: 600V, 30A, SINGLE N-CHANNEL HIGH Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 12V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 6V @ 2.5mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 300 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE145CIT C0G | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 4.8A, 12V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 6V @ 2mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 300 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE180CE RVG | Taiwan Semiconductor Corporation | Description: 600V, 20A, SINGLE N-CHANNEL HIGH Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 6V @ 1.8mA Power Dissipation (Max): 169W (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE180CE RVG | Taiwan Semiconductor | MOSFETs 600V, 20A, Single N-Channel High Voltage MOSFETs, PDFN88 | товару немає в наявності | Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE180CE RVG | Taiwan Semiconductor Corporation | Description: 600V, 20A, SINGLE N-CHANNEL HIGH Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 6V @ 1.8mA Power Dissipation (Max): 169W (Tc) Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Tape & Reel (TR) | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE180CIT C0G | TAIWAN SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 63W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 63W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE180CIT C0G | Taiwan Semiconductor Corporation | Description: 600V, 13A, SINGLE N-CHANNEL HIGH Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.8mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE180CIT C0G | Taiwan Semiconductor | MOSFETs 600V, 13A, Single N-Channel High Voltage MOSFETs | на замовлення 1988 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE200CIT C0G | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 4A, 12V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.65mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 300 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE200CIT C0G | Taiwan Semiconductor | MOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs | на замовлення 1984 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE285CE RVG | Taiwan Semiconductor Corporation | Description: 600V, 16A, SINGLE N-CHANNEL HIGH Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 6V @ 1.4mA Power Dissipation (Max): 164W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V | товару немає в наявності | Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE285CE RVG | Taiwan Semiconductor | MOSFETs 600V, 16A, Single N-Channel High Voltage MOSFETs, PDFN88 | товару немає в наявності | Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE285CE RVG | Taiwan Semiconductor Corporation | Description: 600V, 16A, SINGLE N-CHANNEL HIGH Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 6V @ 1.4mA Power Dissipation (Max): 164W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE285CH C5G | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V | на замовлення 3726 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE285CH C5G | Taiwan Semiconductor | MOSFETs 600V, 15A, Single N-Channel High Voltage MOSFETs | товару немає в наявності | Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE285CIT C0G | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 3.2A, 12V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 300 V | на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE285CIT C0G | TAIWAN SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.5A; 56W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.5A Power dissipation: 56W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.285Ω Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE285CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V | на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
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| TSM60NE285CP ROG | Taiwan Semiconductor | MOSFETs 600V, 15A, Single N-Channel High Voltage MOSFETs | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM60NE285CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET Vgs(th) (Max) @ Id: 6V @ 1.4mA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: TO-252 (DPAK) | на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| TSM6502CR | Taiwan Semiconductor Corporation | Description: MOSFET N/P-CH 60V 24A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM6502CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N/P-CH 60V 24A 8PDFN Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 40W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | на замовлення 7038 шт: термін постачання 21-31 дні (днів) |
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| TSM6502CR RLG | Taiwan Semiconductor | Trans MOSFET N/P-CH 60V 5.4A/4A 8-Pin PDFN EP T/R | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM6502CR RLG | Taiwan Semiconductor | MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET | на замовлення 5006 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM6502CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N/P-CH 60V 24A 8PDFN Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 40W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| TSM6502CR RLG | Taiwan Semiconductor | Trans MOSFET N/P-CH 60V 5.4A/4A 8-Pin PDFN EP T/R | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650N15CR | Taiwan Semiconductor Corporation | Description: 150V, 24A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 2.6W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650N15CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 150V 24A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM650N15CR RLG | Taiwan Semiconductor | MOSFET 150V, 24A, Single N-Channel Power MOSFET | на замовлення 4990 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM650N15CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 150V 24A 8PDFN Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 150 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM650N15CS | Taiwan Semiconductor Corporation | Description: 150V, 9A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650N15CS RLG | Taiwan Semiconductor | MOSFET 150V, 9A, Single N-Channel Power MOSFET | товару немає в наявності | Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650N15CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM650N15CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM650P02CX | Taiwan Semiconductor Corporation | Description: -20V, -4.1A, SINGLE P-CHANNEL PO Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 0.8V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V | товару немає в наявності | Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650P02CX RFG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 4.1A 3-Pin SOT-23 T/R | на замовлення 17 шт: термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM650P02CX RFG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 20V 4.1A SOT23 Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V | на замовлення 70024 шт: термін постачання 21-31 дні (днів) |
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| TSM650P02CX RFG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 20V 4.1A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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| TSM650P02CX RFG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 4.1A 3-Pin SOT-23 T/R | товару немає в наявності | Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650P02CX RFG | Taiwan Semiconductor | MOSFET -20V, -4.1A, Single P-Channel Power MOSFET | на замовлення 15113 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM650P03CX | Taiwan Semiconductor Co., Ltd. | Transistor P-Channel MOSFET; 30V; 12V; 100mOhm; 4,1A; 1,56W; -55°C ~ 150°C; TSM650P03CX RFG TSM650P03CX TTSM650p03cx кількість в упаковці: 100 шт | на замовлення 200 шт: термін постачання 28-31 дні (днів) |
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| TSM650P03CX | Taiwan Semiconductor | Trans MOSFET P-CH 30V 4.1A 3-Pin SOT-23 T/R | товару немає в наявності | Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650P03CX | Taiwan Semiconductor | MOSFETs -30V, -4.1A, Single P-Channel MOSFETs | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| TSM650P03CX | Taiwan Semiconductor Corporation | Description: -30V, -4.1A, SINGLE P-CHANNEL PO Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V | товару немає в наявності | Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650P03CX RFG | Taiwan Semiconductor | Trans MOSFET P-CH 30V 4.1A 3-Pin SOT-23 T/R | товару немає в наявності | Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650P03CX RFG | Taiwan Semiconductor | MOSFETs -30V, -4.1A, Single P-Channel Power MOSFET | на замовлення 4170 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
| TSM650P03CX RFG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 30V 4.1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V | на замовлення 60630 шт: термін постачання 21-31 дні (днів) |
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| TSM650P03CX RFG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 30V 4.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V | на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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| TSM650P03CX RFG | Taiwan Semiconductor | Trans MOSFET P-CH 30V 4.1A 3-Pin SOT-23 T/R | товару немає в наявності | Мінімальне замовлення: 12000 шт В кошику од. на суму грн. | ||||||||||||||||
| TSM650P03CX RFG-ML | MOSLEADER | Description: P-Channel -30V -4.1A SOT-23 Packaging: Tape & Reel (TR) | на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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