Продукція > IPP
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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| IPP80N06S208AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 58A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S208AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||
| IPP80N06S208AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S209AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 125µA Supplier Device Package: PG-TO220-3-1 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S209AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
| IPP80N06S209AKSA2 | Infineon | на замовлення 500 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | |||||||||||
| IPP80N06S209AKSA2 | INFINEON | Description: INFINEON - IPP80N06S209AKSA2 - Leistungs-MOSFET, n-Kanal, 55 V, 80 A, 0.0076 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55 Dauer-Drainstrom Id: 80 Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 190 Gate-Source-Schwellenspannung, max.: 3 Verlustleistung: 190 Bauform - Transistor: TO-220 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: OptiMOS Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0076 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0076 SVHC: No SVHC (08-Jul-2021) | на замовлення 443 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S209AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
| IPP80N06S209AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 125µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S209AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | на замовлення 196 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S209AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 98 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2H5AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 230µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2H5AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Qualification: AEC-Q101 | на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S2H5AKSA2 | Infineon Technologies | MOSFET N-CHANNEL_55/60V | на замовлення 500 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2H5AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L-05 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L-05 | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L-06 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 180µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L-07 | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L-07 | INF | 09+ DO-41 | на замовлення 2000 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L-07 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 150µA Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L-H5 | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L05AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Qualification: AEC-Q101 | на замовлення 25938 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S2L05AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L06AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Qualification: AEC-Q101 | на замовлення 19000 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S2L06AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L06AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Qualification: AEC-Q101 | на замовлення 18500 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S2L06AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 2V @ 150µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies | MOSFETs MOSFET_)40V 60V) | на замовлення 11 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 2V @ 150µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S2L09AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 125µA | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L09AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 1000 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L09AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V Qualification: AEC-Q101 | на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S2L09AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L11AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 93µA Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L11AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2V @ 93µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V Qualification: AEC-Q101 | на замовлення 19422 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S2L11AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2V @ 93µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2L11AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 479 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2LH5AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2LH5AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Qualification: AEC-Q101 | на замовлення 37835 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S2LH5AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 466 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N06S2LH5AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S3-05 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S3-07 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7768 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 80µA | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S3L-05 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2.2V @ 115µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S3L-06 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2.2V @ 80µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S3L-08 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2.2V @ 55µA Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4-05 | Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4-07 | Infineon | на замовлення 114500 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | |||||||||||
| IPP80N06S405AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S405AKSA1 | Infineon Technologies | MOSFET N-CHANNEL_55/60V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S405AKSA2 | Infineon Technologies | Description: MOSFET N-CHANNEL_55/60V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S405AKSA2 | Infineon Technologies | MOSFET MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S405AKSA2 | Infineon Technologies | Description: MOSFET N-CHANNEL_55/60V Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Qualification: AEC-Q101 | на замовлення 18500 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S407AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 40µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S407AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 40µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S407AKSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
| IPP80N06S407AKSA2 | Infineon Technologies | MOSFET MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4L-05 | Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4L-07 | Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 | на замовлення 1391 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4L05AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Qualification: AEC-Q101 | на замовлення 11500 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S4L05AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4L05AKSA2 | Infineon Technologies | MOSFET MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4L05AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 40A, 4.5V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4L07AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 40µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4L07AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 40µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V Qualification: AEC-Q101 | на замовлення 3692 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S4L07AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 40µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V Qualification: AEC-Q101 | на замовлення 19000 шт: термін постачання 21-31 дні (днів) |
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| IPP80N06S4L07AKSA2 | Infineon Technologies | MOSFET MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N06S4L07AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 40µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N07S405AKSA1 | Infineon Technologies | Description: MOSFET N-CH TO220-3 Packaging: Tube Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Grade: Automotive Part Status: Active Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N07S405AKSA1 | Infineon Technologies | MOSFET N-CHANNEL 75/80V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N08S2-07 | Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N08S207AKSA1 | Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||
| IPP80N08S207AKSA1 | Infineon Technologies | Description: MOSFET N-CH 75V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||
| IPP80N08S207AKSA1 | Infineon Technologies | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||
| IPP80N08S207AKSA1 | Infineon Technologies | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||
| IPP80N08S2L-07 | Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS | на замовлення 474 шт: термін постачання 385-394 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N08S2L07AKSA1 | INFINEON | Description: INFINEON - IPP80N08S2L07AKSA1 - Leistungs-MOSFET, n-Kanal, 75 V, 80 A, 0.0051 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 75 Dauer-Drainstrom Id: 80 Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 300 Gate-Source-Schwellenspannung, max.: 1.6 Verlustleistung: 300 Bauform - Transistor: TO-220 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: OptiMOS Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0051 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0051 SVHC: No SVHC (08-Jul-2021) | на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| IPP80N08S2L07AKSA1 | Infineon Technologies | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
| IPP80N08S2L07AKSA1 | Infineon Technologies | MOSFET N-Ch 75V 80A TO220-3 OptiMOS | на замовлення 26 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80N08S2L07AKSA1 | Infineon Technologies | Description: MOSFET N-CH 75V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Qualification: AEC-Q101 | на замовлення 91 шт: термін постачання 21-31 дні (днів) |
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| IPP80N08S2L07AKSA1 | Infineon Technologies | Trans MOSFET N-CH 75V 80A Automotive 3-Pin(3+Tab) TO-220AB Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
| IPP80N08S2L07AKSA1 | Infineon Technologies | Description: MOSFET N-CH 75V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80N08S406AKSA1 | Infineon Technologies | Description: MOSFET N-CH 80V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
| IPP80N08S406AKSA1 | INFINEON | Description: INFINEON - IPP80N08S406AKSA1 - Leistungs-MOSFET, n-Kanal, 80 V, 80 A, 0.005 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pins Produktpalette: OptiMOS-T2 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.005ohm SVHC: No SVHC (27-Jun-2018) | на замовлення 1330 шт: термін постачання 21-31 дні (днів) |
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| IPP80N08S406AKSA1 | Infineon Technologies | Description: MOSFET N-CH 80V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 | на замовлення 92306 шт: термін постачання 21-31 дні (днів) |
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| IPP80N08S406AKSA1 | Infineon Technologies | MOSFET N-CHANNEL 75/80V | на замовлення 287 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80P03P4-05 | Infineon Technologies | MOSFET P-Ch -30V -80A TO220-3 | на замовлення 470 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80P03P405AKSA1 | Infineon Technologies | Description: MOSFET P-CH 30V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 4V @ 253µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80P03P4L-04 | Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | на замовлення 7000 шт: термін постачання 386-395 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80P03P4L-07 | Infineon Technologies | MOSFET P-Ch -30V -80A TO220-3 OptiMOS-P2 | на замовлення 1317 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80P03P4L04AKSA1 | Infineon Technologies | MOSFET P-Ch -30V 80A TO220-3 OptiMOS-P2 | на замовлення 1000 шт: термін постачання 386-395 дні (днів) | В кошику од. на суму грн. | ||||||||||
| IPP80P03P4L04AKSA1 | INFINEON | Description: INFINEON - IPP80P03P4L04AKSA1 - Leistungs-MOSFET, p-Kanal, 30 V, 80 A, 0.0037 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 80 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 137 Bauform - Transistor: TO-220 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.0037 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 1.5 SVHC: No SVHC (27-Jun-2018) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80P03P4L04AKSA1 | Infineon Technologies | Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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| IPP80P03P4L04AKSA1 | Infineon Technologies | Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||
| IPP80P03P4L04AKSA1 | Infineon Technologies | Description: MOSFET P-CH 30V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 2V @ 253µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||
| IPP80P03P4L04AKSA2 | Infineon | Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-220 IPP80P03P4L04AKSA2 IPP80P03P4L04 TIPP80p03p4l04 кількість в упаковці: 10 шт | на замовлення 50 шт: термін постачання 28-31 дні (днів) |
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| IPP80P03P4L04AKSA2 | Infineon Technologies | Description: MOSFET P-CH 30V 80A TO220-3 Drain to Source Voltage (Vdss): 30 V Vgs (Max): +5V, -16V Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 253µA Power Dissipation (Max): 137W (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V | на замовлення 451 шт: термін постачання 21-31 дні (днів) |
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