Продукція > IPP
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|
| IPP80N04S306AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO220-3 Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Grade: Automotive Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 52µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V | на замовлення 500 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N04S306AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 52µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N04S306AKSA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPP80N04S306AKSA1 - IPP80N04 20V-40V N-CHANNEL AUTOMOTIVE M tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | на замовлення 500 шт: термін постачання 21-31 дні (днів) | Мінімальне замовлення: 477 шт В кошику од. на суму грн. | ||||||
| IPP80N04S3H4AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO220-3 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N04S4-03 | Infineon Technologies | MOSFETs N-Ch 40V 80A TO220-3 OptiMOS-T2 | на замовлення 380 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N04S4-04 Код товару: 202358
Додати до обраних
Обраний товар
| Транзистори > Польові N-канальні | товару немає в наявності
| В кошику од. на суму грн. | |||||||
| IPP80N04S4-04 | Infineon Technologies | MOSFETs N-Ch 40V 80A TO220-3 OptiMOS-T2 | на замовлення 334 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N04S403AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO220-3-1 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N04S403AKSA1 | Infineon | на замовлення 500 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | |||||||
| IPP80N04S404AKSA1 | Infineon Technologies | Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N04S404AKSA1 | Infineon Technologies | MOSFETs N-Ch 40V 80A TO220-3 OptiMOS-T2 | на замовлення 1 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N04S404AKSA1 | INFINEON | Description: INFINEON - IPP80N04S404AKSA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 0.0043 ohm, TO220-3-1, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO220-3-1 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS-T2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0043ohm SVHC: No SVHC (23-Jan-2024) | на замовлення 500 шт: термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N04S404AKSA1 | Infineon Technologies | Trans MOSFET N-CH 40V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N04S404AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N04S4L-04 | Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | на замовлення 757 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N04S4L04AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 80A TO220-3-1 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 80A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N04S4L04AKSA1 | INFINEON | Description: INFINEON - IPP80N04S4L04AKSA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 0.0037 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS-T2 Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0037ohm SVHC: No SVHC (23-Jan-2024) | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2-05 | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2-07AKSA4 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 180µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2-09 | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2-09 | INF | 09+ | на замовлення 318 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S2-09 | Infineon Technologies | Description: IPP80N06 - 55V-60V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 125µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2-H5 | Infineon Technologies | Description: IPP80N06 - 55V-60V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S205AKSA1 | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S205AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S207AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S207AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Qualification: AEC-Q101 | на замовлення 9500 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S207AKSA4 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Qualification: AEC-Q101 | на замовлення 37026 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S207AKSA4 | Infineon Technologies | MOSFETs MOSFET_)40V 60V) | на замовлення 84 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S207AKSA4 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N06S207AKSA4 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S208 | Infineon | на замовлення 10000 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | |||||||
| IPP80N06S208AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 58A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: PG-TO220-3-1 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S208AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||
| IPP80N06S208AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||
| IPP80N06S208AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 215W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 58A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S208AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||
| IPP80N06S208AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | на замовлення 9 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S208AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||
| IPP80N06S209AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 125µA Supplier Device Package: PG-TO220-3-1 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S209AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N06S209AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 98 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S209AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 125µA Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S209AKSA2 | Infineon | на замовлення 500 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | |||||||
| IPP80N06S209AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | на замовлення 196 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S209AKSA2 | INFINEON | Description: INFINEON - IPP80N06S209AKSA2 - Leistungs-MOSFET, n-Kanal, 55 V, 80 A, 0.0076 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55 Dauer-Drainstrom Id: 80 Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 190 Gate-Source-Schwellenspannung, max.: 3 Verlustleistung: 190 Bauform - Transistor: TO-220 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: OptiMOS Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0076 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0076 SVHC: No SVHC (08-Jul-2021) | на замовлення 443 шт: термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S209AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N06S2H5AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 230µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2H5AKSA2 | Infineon Technologies | MOSFET N-CHANNEL_55/60V | на замовлення 500 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S2H5AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Qualification: AEC-Q101 | на замовлення 500 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S2H5AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L-05 | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L-05 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L-06 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 180µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L-07 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 150µA Power Dissipation (Max): 210W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L-07 | INF | 09+ DO-41 | на замовлення 2000 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S2L-07 | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L-H5 | Infineon Technologies | MOSFET N-Ch 55V 80A TO220-3 OptiMOS | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L05AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Qualification: AEC-Q101 | на замовлення 25938 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S2L05AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L06AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Qualification: AEC-Q101 | на замовлення 19000 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S2L06AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N06S2L06AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L06AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 69A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Qualification: AEC-Q101 | на замовлення 18500 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies | Trans MOSFET N-CH 55V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 2V @ 150µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||
| IPP80N06S2L07AKSA2 | Infineon Technologies | MOSFETs MOSFET_)40V 60V) | на замовлення 11 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S2L09AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Power Dissipation (Max): 190W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 125µA | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L09AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 1000 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S2L09AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V Qualification: AEC-Q101 | на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S2L09AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 52A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 2V @ 125µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2620 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L11AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 93µA Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L11AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2V @ 93µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2L11AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 479 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S2L11AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2V @ 93µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V Qualification: AEC-Q101 | на замовлення 19422 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S2LH5AKSA1 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2LH5AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S2LH5AKSA2 | Infineon Technologies | MOSFET MOSFET_)40V 60V) | на замовлення 466 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S2LH5AKSA2 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V Qualification: AEC-Q101 | на замовлення 37835 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S3-05 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 63A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S3-07 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Power Dissipation (Max): 135W (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 7768 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 80µA | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S3L-05 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 13060 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 273 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2.2V @ 115µA Power Dissipation (Max): 165W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 69A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S3L-06 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 9417 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2.2V @ 80µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 56A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S3L-08 | Infineon Technologies | Description: MOSFET N-CH 55V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 6475 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2.2V @ 55µA Power Dissipation (Max): 105W (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 43A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S4-05 | Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S4-07 | Infineon | на замовлення 114500 шт: термін постачання 14-28 дні (днів) | В кошику од. на суму грн. | |||||||
| IPP80N06S405AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S405AKSA1 | Infineon Technologies | MOSFET N-CHANNEL_55/60V | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S405AKSA2 | Infineon Technologies | Description: MOSFET N-CHANNEL_55/60V Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Qualification: AEC-Q101 | на замовлення 18500 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S405AKSA2 | Infineon Technologies | Description: MOSFET N-CHANNEL_55/60V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S405AKSA2 | Infineon Technologies | MOSFET MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S407AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Discontinued at Digi-Key Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 40µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S407AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 4V @ 40µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S407AKSA2 | Infineon Technologies | MOSFET MOSFET | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S407AKSA2 | Infineon Technologies | Trans MOSFET N-CH 60V 80A Automotive 3-Pin(3+Tab) TO-220 Tube | товару немає в наявності | Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||
| IPP80N06S4L-05 | Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 OptiMOS-T2 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S4L-07 | Infineon Technologies | MOSFETs N-Ch 60V 80A TO220-3 OptiMOS-T2 | на замовлення 952 шт: термін постачання 21-30 дні (днів) | В кошику од. на суму грн. | ||||||
| IPP80N06S4L05AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||
| IPP80N06S4L05AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Qualification: AEC-Q101 | на замовлення 11500 шт: термін постачання 21-31 дні (днів) |
| ||||||
| IPP80N06S4L05AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 80A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 40A, 4.5V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. |