НазваВиробникІнформаціяДоступністьЦіна без ПДВ
G4S01S01012.0GoreRF Cable Assemblies 18GHz 12"Lng EndA SMA EndB SMA
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G4S01S01024.0GoreRF Cable Assemblies 18GHz 24"Lng EndA SMA EndB SMA
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G4S01S01036.0GoreRF Cable Assemblies 18GHz 36"Lng EndA SMA EndB SMA
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G4S01S01048.0GoreRF Cable Assemblies 18GHz 48"Lng EndA SMA EndB SMA
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G4S01S01060.0GoreRF Cable Assemblies 18GHz 60"Lng EndA SMA EndB SMA
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G4S06508ATGlobal Power Technology-GPTDescription: DIODE SIC 650V 24.5A TO220AC
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G4S06508ATGlobal Power Technology-GPTDescription: DIODE SIC 650V 24.5A TO220AC
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G4S06508CTGlobal Power Technology-GPTDescription: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508CTGlobal Power Technology Co. LtdDescription: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508CTGlobal Power Technology-GPTDescription: DIODE SIL CARBIDE 650V 24A TO252
Packaging: Tape & Box (TB)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 24A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508DTGlobal Power Technology-GPTDescription: DIODE SIL CARBIDE 650V 24A TO263
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G4S06508DTGlobal Power Technology-GPTDescription: DIODE SIL CARBIDE 650V 24A TO263
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G4S06508HTGlobal Power Technology-GPTDescription: DIODE SIL CARB 650V 18.5A TO220F
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G4S06508HTGlobal Power Technology-GPTDescription: DIODE SIL CARB 650V 18.5A TO220F
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G4S06508JTGlobal Power Technology-GPTDescription: DIODE SIC 650V 23.5A TO220ISO
Packaging: Cut Tape (CT)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 23.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508JTGlobal Power Technology Co. LtdDescription: DIODE SIC 650V 23.5A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 23.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508JTGlobal Power Technology-GPTDescription: DIODE SIC 650V 23.5A TO220ISO
Packaging: Tape & Box (TB)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 395pF @ 0V, 1MHz
Current - Average Rectified (Io): 23.5A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06508QTGlobal Power Technology-GPTDescription: DIODE SIL CARBIDE 650V 34A 4DFN
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G4S06508QTGlobal Power Technology-GPTDescription: DIODE SIL CARBIDE 650V 34A 4DFN
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G4S06510JTGlobal Power Technology-GPTDescription: DIODE SIC 650V 31.2A TO220ISO
Packaging: Cut Tape (CT)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.2A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06510JTGlobal Power Technology Co. LtdDescription: DIODE SIC 650V 31.2A TO220ISO
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.2A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
товар відсутній
G4S06510JTGlobal Power Technology-GPTDescription: DIODE SIC 650V 31.2A TO220ISO
Packaging: Tape & Box (TB)
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 550pF @ 0V, 1MHz
Current - Average Rectified (Io): 31.2A
Supplier Device Package: TO-220ISO
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
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G4S06510QTGlobal Power Technology Co. LtdDescription: SIC SCHOTTKY DIODE 650V 10A DFN8
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G4S06510QTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 10A DFN8
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G4S06510QTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 10A DFN8
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G4S06515HTGlobal Power Technology Co. LtdDescription: DIODE SIL CARB 650V 23.8A TO220F
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G4S06515HTGlobal Power Technology-GPTDescription: DIODE SIL CARB 650V 23.8A TO220F
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G4S06515HTGlobal Power Technology-GPTDescription: DIODE SIL CARB 650V 23.8A TO220F
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G4S06515PTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 15A 2-PI
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G4S06515PTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 15A 2-PI
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G4S06515QTGlobal Power Technology Co. LtdDescription: SIC SCHOTTKY DIODE 650V 15A DFN8
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G4S06515QTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 15A DFN8
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G4S06515QTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 15A DFN8
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G4S06520BTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 20A 3-PI
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G4S06520BTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 20A 3-PI
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G4S06520BTGlobal Power Technology Co. LtdDescription: SIC SCHOTTKY DIODE 650V 20A 3-PI
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G4S06540PTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 40A 2-PI
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G4S06540PTGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 650V 40A 2-PI
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G4S06540PTGlobal Power Technology Co. LtdDescription: SIC SCHOTTKY DIODE 650V 40A 2-PI
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G4S12020BMGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 1200V 20A 3-P
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G4S12020BMGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 1200V 20A 3-P
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G4S12020DGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 1200V 20A 2-P
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G4S12020DGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 1200V 20A 2-P
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G4S12020DGlobal Power Technology Co. LtdDescription: SIC SCHOTTKY DIODE 1200V 20A 2-P
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G4S12040BMGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 1200V 40A 3-P
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 64.5A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
товар відсутній
G4S12040BMGlobal Power Technology-GPTDescription: SIC SCHOTTKY DIODE 1200V 40A 3-P
Packaging: Tape & Box (TB)
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 64.5A (DC)
Supplier Device Package: TO-247AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 20 A
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
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G4S6508ZGlobal Power Technology-GPTDescription: DIODE SIL CARB 650V 30.5A 8DFN
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G4S6508ZGlobal Power Technology-GPTDescription: DIODE SIL CARB 650V 30.5A 8DFN
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G4SATB100K
на замовлення 600 шт:
термін постачання 14-28 дні (днів)
G4SATB102M
на замовлення 1500 шт:
термін постачання 14-28 дні (днів)