Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (27438) > Сторінка 207 з 458
Фото | Назва | Виробник | Інформація |
Доступність |
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BC846B/DG/B4VL | Nexperia USA Inc. |
Description: TRANS NPN 65V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 250 mW |
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BC846B/DG/B3,215 | Nexperia USA Inc. |
Description: TRANS NPN 65V 0.1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 250 mW |
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BZT52-B15X | Nexperia USA Inc. | Description: DIODE ZENER 15V 590MW SOD123 |
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BZT52-B39X | Nexperia USA Inc. |
Description: DIODE ZENER 39V 590MW SOD123 Packaging: Cut Tape (CT) Tolerance: ±2.05% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Voltage - Zener (Nom) (Vz): 39 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: SOD-123 Part Status: Active Power - Max: 590 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V |
на замовлення 6555 шт: термін постачання 21-31 дні (днів) |
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NHUMB9F | Nexperia USA Inc. |
Description: TRANS PREBIAS 2PNP 80V 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 350mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Grade: Automotive Qualification: AEC-Q101 |
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PDZ10BGW,115 | Nexperia USA Inc. | Description: NOW NEXPERIA PDZ10BGW - ZENER DI |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
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PDZ10BGW115 | Nexperia USA Inc. | Description: NOW NEXPERIA PDZ10BGW - ZENER DI |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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PEMH14,115 | Nexperia USA Inc. | Description: TRANS PREBIAS 2NPN 50V SOT666 |
на замовлення 160000 шт: термін постачання 21-31 дні (днів) |
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PUMF11,115 | Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V, 40V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V Frequency - Transition: 100MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: 6-TSSOP Part Status: Active |
на замовлення 145000 шт: термін постачання 21-31 дні (днів) |
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PTVS64VP1UP,115 | Nexperia USA Inc. |
Description: TVS DIODE 64VWM 103VC SOD128 Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Applications: Automotive Current - Peak Pulse (10/1000µs): 5.8A Voltage - Reverse Standoff (Typ): 64V Supplier Device Package: SOD-128/CFP5 Unidirectional Channels: 1 Voltage - Breakdown (Min): 71.1V Voltage - Clamping (Max) @ Ipp: 103V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 36 шт: термін постачання 21-31 дні (днів) |
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PSMN3R8-100BS,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V |
на замовлення 16646 шт: термін постачання 21-31 дні (днів) |
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PMN40SNAX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V Power Dissipation (Max): 1.8W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PBSS302NDH,125 | Nexperia USA Inc. |
Description: PBSS302NDH - 4A, 40V, NPN Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V Frequency - Transition: 150MHz Supplier Device Package: 6-TSOP Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 360 mW |
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PBSS302ND,125 | Nexperia USA Inc. |
Description: NOW NEXPERIA PBSS302ND - SMALL S Packaging: Bulk Part Status: Active |
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BZX84-B3V0,215 | Nexperia USA Inc. |
Description: DIODE ZENER 3V 250MW TO236AB Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 3 V Impedance (Max) (Zzt): 95 Ohms Supplier Device Package: TO-236AB Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 10 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8823 шт: термін постачання 21-31 дні (днів) |
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PMPB85ENEAX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 3A DFN2020MD-6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V |
на замовлення 35261 шт: термін постачання 21-31 дні (днів) |
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PMPB25ENEX | Nexperia USA Inc. |
Description: MOSFET DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BUK6D120-40EX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Power Dissipation (Max): 2W (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BUK6D120-40EX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V Power Dissipation (Max): 2W (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 35478 шт: термін постачання 21-31 дні (днів) |
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BUK6D72-30EX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4A/11A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BUK6D72-30EX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 4A/11A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 11509 шт: термін постачання 21-31 дні (днів) |
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BUK6D38-30EX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 5.5A/17A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BUK6D38-30EX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 5.5A/17A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5220 шт: термін постачання 21-31 дні (днів) |
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BUK6D385-100EX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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BUK6D385-100EX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 27990 шт: термін постачання 21-31 дні (днів) |
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BUK6D77-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 3.4A/10.6A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.6A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 3.4A, 10V Power Dissipation (Max): 2W (Ta), 18.8W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 23565 шт: термін постачання 21-31 дні (днів) |
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BUK6D22-30EX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.2A/22A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BUK6D22-30EX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.2A/22A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5659 шт: термін постачання 21-31 дні (днів) |
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NHDTC144EUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
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NHDTC144EUF | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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NHDTC144ETR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NHDTC144ETR | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 250 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3670 шт: термін постачання 21-31 дні (днів) |
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NHDTC144EUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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NHDTC144EUX | Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 80V SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 235 mW Frequency - Transition: 170 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 26887 шт: термін постачання 21-31 дні (днів) |
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PESD5V0S1UA/ZLX | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 9.8VC SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 480pF @ 1MHz Current - Peak Pulse (10/1000µs): 47A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOD-323 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.2V Voltage - Clamping (Max) @ Ipp: 9.8V Power - Peak Pulse: 890W Power Line Protection: No Part Status: Obsolete |
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TDZ4V7J,115 | Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 500MW SOD323F Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOD-323F Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14501 шт: термін постачання 21-31 дні (днів) |
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NHUMD13X | Nexperia USA Inc. | Description: NHUMD13/SOT363/SC-88 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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74HC4052PW | Nexperia USA Inc. |
Description: DIFFERENTIAL MULTIPLEXER, 1 FUNC Packaging: Bulk Part Status: Active |
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BC817-40QCZ | Nexperia USA Inc. |
Description: TRANS NPN 45V 0.5A DFN1412D-3 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: DFN1412D-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 380 mW |
на замовлення 9788 шт: термін постачання 21-31 дні (днів) |
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BZX79-C8V2,113 | Nexperia USA Inc. |
Description: DIODE ZENER 8.2V 400MW ALF2 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: ALF2 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V |
на замовлення 8868 шт: термін постачання 21-31 дні (днів) |
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74LVT573PW,118 | Nexperia USA Inc. |
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 32mA, 64mA Delay Time - Propagation: 2.7ns Supplier Device Package: 20-TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74LVC8T245PW | Nexperia USA Inc. |
Description: IC TRANSLATION TXRX 5.5V 24TSSOP Packaging: Bulk Package / Case: 24-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Translation Transceiver Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 24-TSSOP Part Status: Active |
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BUK9Y25-80E,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 37A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2914 шт: термін постачання 21-31 дні (днів) |
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74AHCT1G14GW | Nexperia USA Inc. |
Description: INVERTER, AHCT/VHCT/VT SERIES, 1 Packaging: Bulk Part Status: Active |
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74HCT3G14DP,125 | Nexperia USA Inc. |
Description: IC INVERT SCHMITT 3CH 3IN 8TSSOP Packaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 3 Supplier Device Package: 8-TSSOP Input Logic Level - High: 1.9V ~ 2.1V Input Logic Level - Low: 0.5V ~ 0.6V Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 1 µA |
на замовлення 7854 шт: термін постачання 21-31 дні (днів) |
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74LV08APWJ | Nexperia USA Inc. |
Description: IC GATE AND 4CH 2-INP 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 12mA, 12mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 3.8V Input Logic Level - Low: 0.1V ~ 0.55V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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74LV08APWJ | Nexperia USA Inc. |
Description: IC GATE AND 4CH 2-INP 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 12mA, 12mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 3.8V Input Logic Level - Low: 0.1V ~ 0.55V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
на замовлення 13549 шт: термін постачання 21-31 дні (днів) |
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74LV00BQ,115 | Nexperia USA Inc. |
Description: IC GATE NAND 4CH 2-INP 14DHVQFN Packaging: Tape & Reel (TR) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1V ~ 5.5V Current - Output High, Low: 12mA, 12mA Number of Inputs: 2 Supplier Device Package: 14-DHVQFN (2.5x3) Input Logic Level - High: 0.9V ~ 2V Input Logic Level - Low: 0.3V ~ 0.8V Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 40 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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74LV00BQ,115 | Nexperia USA Inc. |
Description: IC GATE NAND 4CH 2-INP 14DHVQFN Packaging: Cut Tape (CT) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1V ~ 5.5V Current - Output High, Low: 12mA, 12mA Number of Inputs: 2 Supplier Device Package: 14-DHVQFN (2.5x3) Input Logic Level - High: 0.9V ~ 2V Input Logic Level - Low: 0.3V ~ 0.8V Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 40 µA |
на замовлення 4075 шт: термін постачання 21-31 дні (днів) |
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74LV00D,118 | Nexperia USA Inc. | Description: IC GATE NAND 4CH 2-INP 14SO |
на замовлення 5927 шт: термін постачання 21-31 дні (днів) |
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PHPT61002NYCLHX | Nexperia USA Inc. |
Description: TRANS NPN 100V 2A LFPAK56 PWRSO8 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V Frequency - Transition: 140MHz Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 25 W |
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BUK9Y2R8-40HX | Nexperia USA Inc. | Description: BUK9Y2R8-40H/SOT669/LFPAK |
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BUK9Y2R4-40HX | Nexperia USA Inc. |
Description: BUK9Y2R4-40H/SOT669/LFPAK Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Vgs (Max): +16V, -10V |
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BUK9Y1R9-40HX | Nexperia USA Inc. | Description: BUK9Y1R9-40H/SOT669/LFPAK |
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BUK6Y25-40PX | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 38A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V Power Dissipation (Max): 66W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V Qualification: AEC-Q101 |
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BUK6Y25-40PX | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 38A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V Power Dissipation (Max): 66W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V Qualification: AEC-Q101 |
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BUK6Y20-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 41A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V Power Dissipation (Max): 66W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V Qualification: AEC-Q101 |
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BUK6Y20-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 41A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V Power Dissipation (Max): 66W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V Qualification: AEC-Q101 |
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BUK6Y12-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 67A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 106W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 15 V |
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BUK6Y12-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 67A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 106W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 15 V |
товар відсутній |
BC846B/DG/B4VL |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Description: TRANS NPN 65V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
товар відсутній
BC846B/DG/B3,215 |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 65V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
Description: TRANS NPN 65V 0.1A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 250 mW
товар відсутній
BZT52-B39X |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 39V 590MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2.05%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
Description: DIODE ZENER 39V 590MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2.05%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 590 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 27.3 V
на замовлення 6555 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 15.64 грн |
27+ | 10.41 грн |
100+ | 5.08 грн |
500+ | 3.98 грн |
1000+ | 2.76 грн |
NHUMB9F |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 80V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 2PNP 80V 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
PDZ10BGW,115 |
Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PDZ10BGW - ZENER DI
Description: NOW NEXPERIA PDZ10BGW - ZENER DI
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 1.37 грн |
PDZ10BGW115 |
Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PDZ10BGW - ZENER DI
Description: NOW NEXPERIA PDZ10BGW - ZENER DI
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
15000+ | 1.37 грн |
PEMH14,115 |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN 50V SOT666
Description: TRANS PREBIAS 2NPN 50V SOT666
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4699+ | 4.11 грн |
PUMF11,115 |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: TRANS PREBIAS 1NPN 1PNP 6TSSOP
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V, 40V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V / 120 @ 1mA, 6V
Frequency - Transition: 100MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 145000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10452+ | 2 грн |
PTVS64VP1UP,115 |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 64VWM 103VC SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 64VWM 103VC SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 5.8A
Voltage - Reverse Standoff (Typ): 64V
Supplier Device Package: SOD-128/CFP5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 71.1V
Voltage - Clamping (Max) @ Ipp: 103V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 36 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.97 грн |
10+ | 29.09 грн |
PSMN3R8-100BS,118 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
на замовлення 16646 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 238.15 грн |
10+ | 192.5 грн |
100+ | 155.75 грн |
PMN40SNAX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 4.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.7A, 10V
Power Dissipation (Max): 1.8W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.84 грн |
PBSS302NDH,125 |
Виробник: Nexperia USA Inc.
Description: PBSS302NDH - 4A, 40V, NPN
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 360 mW
Description: PBSS302NDH - 4A, 40V, NPN
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 360 mW
товар відсутній
PBSS302ND,125 |
Виробник: Nexperia USA Inc.
Description: NOW NEXPERIA PBSS302ND - SMALL S
Packaging: Bulk
Part Status: Active
Description: NOW NEXPERIA PBSS302ND - SMALL S
Packaging: Bulk
Part Status: Active
товар відсутній
BZX84-B3V0,215 |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 3V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 3V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8823 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
23+ | 12.8 грн |
31+ | 9.1 грн |
100+ | 4.92 грн |
500+ | 3.62 грн |
1000+ | 2.52 грн |
PMPB85ENEAX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
на замовлення 35261 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.7 грн |
11+ | 25.6 грн |
100+ | 17.42 грн |
500+ | 12.26 грн |
1000+ | 9.19 грн |
PMPB25ENEX |
Виробник: Nexperia USA Inc.
Description: MOSFET DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
Description: MOSFET DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.2A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.97 грн |
BUK6D120-40EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.19 грн |
6000+ | 6.64 грн |
9000+ | 5.97 грн |
30000+ | 5.52 грн |
BUK6D120-40EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 35478 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.01 грн |
14+ | 19.92 грн |
100+ | 11.95 грн |
500+ | 10.38 грн |
1000+ | 7.06 грн |
BUK6D72-30EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.71 грн |
BUK6D72-30EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 4A/11A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11509 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 28.44 грн |
13+ | 21.36 грн |
100+ | 12.82 грн |
500+ | 11.13 грн |
1000+ | 7.57 грн |
BUK6D38-30EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 8.93 грн |
BUK6D38-30EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 32.7 грн |
12+ | 24.78 грн |
100+ | 14.84 грн |
500+ | 12.9 грн |
1000+ | 8.77 грн |
BUK6D385-100EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.05 грн |
6000+ | 8.35 грн |
9000+ | 7.52 грн |
BUK6D385-100EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 1.4A/3.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 27990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.41 грн |
11+ | 25.06 грн |
100+ | 15.03 грн |
500+ | 13.06 грн |
1000+ | 8.88 грн |
BUK6D77-60EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3.4A/10.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3.4A/10.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 3.4A, 10V
Power Dissipation (Max): 2W (Ta), 18.8W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 23565 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 33.41 грн |
11+ | 25.06 грн |
100+ | 15.03 грн |
500+ | 13.06 грн |
1000+ | 8.88 грн |
BUK6D22-30EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.05 грн |
BUK6D22-30EX |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 7.2A/22A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5659 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.01 грн |
13+ | 22.11 грн |
100+ | 15.36 грн |
500+ | 11.26 грн |
1000+ | 9.15 грн |
NHDTC144EUF |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
NHDTC144EUF |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
19+ | 15.64 грн |
NHDTC144ETR |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.34 грн |
NHDTC144ETR |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 250 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3670 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 13.51 грн |
30+ | 9.24 грн |
100+ | 4.5 грн |
500+ | 3.52 грн |
1000+ | 2.44 грн |
NHDTC144EUX |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 2.72 грн |
6000+ | 2.43 грн |
9000+ | 2.02 грн |
NHDTC144EUX |
Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 80V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 235 mW
Frequency - Transition: 170 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 26887 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
18+ | 16.35 грн |
26+ | 10.68 грн |
100+ | 5.22 грн |
500+ | 4.08 грн |
1000+ | 2.84 грн |
PESD5V0S1UA/ZLX |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 9.8VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 480pF @ 1MHz
Current - Peak Pulse (10/1000µs): 47A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 890W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 5VWM 9.8VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 480pF @ 1MHz
Current - Peak Pulse (10/1000µs): 47A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power - Peak Pulse: 890W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
TDZ4V7J,115 |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 4.7V 500MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14501 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
13+ | 22.04 грн |
19+ | 14.58 грн |
100+ | 7.14 грн |
500+ | 5.59 грн |
1000+ | 3.88 грн |
NHUMD13X |
Виробник: Nexperia USA Inc.
Description: NHUMD13/SOT363/SC-88
Description: NHUMD13/SOT363/SC-88
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 4.64 грн |
74HC4052PW |
Виробник: Nexperia USA Inc.
Description: DIFFERENTIAL MULTIPLEXER, 1 FUNC
Packaging: Bulk
Part Status: Active
Description: DIFFERENTIAL MULTIPLEXER, 1 FUNC
Packaging: Bulk
Part Status: Active
товар відсутній
BC817-40QCZ |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 380 mW
Description: TRANS NPN 45V 0.5A DFN1412D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1412D-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 380 mW
на замовлення 9788 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
16+ | 18.48 грн |
23+ | 11.98 грн |
100+ | 5.84 грн |
500+ | 4.57 грн |
1000+ | 3.18 грн |
2000+ | 2.75 грн |
BZX79-C8V2,113 |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 8.2V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Description: DIODE ZENER 8.2V 400MW ALF2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
на замовлення 8868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
27+ | 10.66 грн |
40+ | 6.98 грн |
100+ | 3.79 грн |
500+ | 2.79 грн |
1000+ | 1.94 грн |
2000+ | 1.61 грн |
5000+ | 1.49 грн |
74LVT573PW,118 |
Виробник: Nexperia USA Inc.
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 2.7ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 2.7ns
Supplier Device Package: 20-TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 15.58 грн |
74LVC8T245PW |
Виробник: Nexperia USA Inc.
Description: IC TRANSLATION TXRX 5.5V 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 24-TSSOP
Part Status: Active
Description: IC TRANSLATION TXRX 5.5V 24TSSOP
Packaging: Bulk
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 24-TSSOP
Part Status: Active
товар відсутній
BUK9Y25-80E,115 |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 37A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2914 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 59.72 грн |
10+ | 46.96 грн |
100+ | 36.52 грн |
500+ | 29.05 грн |
74AHCT1G14GW |
Виробник: Nexperia USA Inc.
Description: INVERTER, AHCT/VHCT/VT SERIES, 1
Packaging: Bulk
Part Status: Active
Description: INVERTER, AHCT/VHCT/VT SERIES, 1
Packaging: Bulk
Part Status: Active
товар відсутній
74HCT3G14DP,125 |
Виробник: Nexperia USA Inc.
Description: IC INVERT SCHMITT 3CH 3IN 8TSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 3CH 3IN 8TSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Supplier Device Package: 8-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 4.5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
на замовлення 7854 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 36.97 грн |
10+ | 30.33 грн |
25+ | 28.29 грн |
100+ | 21.25 грн |
250+ | 19.73 грн |
500+ | 16.7 грн |
1000+ | 12.69 грн |
74LV08APWJ |
Виробник: Nexperia USA Inc.
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 3.8V
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 3.8V
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2500+ | 9.68 грн |
5000+ | 8.72 грн |
12500+ | 8.12 грн |
74LV08APWJ |
Виробник: Nexperia USA Inc.
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 3.8V
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 3.8V
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
на замовлення 13549 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 27.73 грн |
13+ | 22.59 грн |
25+ | 21.03 грн |
100+ | 15.8 грн |
250+ | 14.67 грн |
500+ | 12.42 грн |
1000+ | 9.44 грн |
74LV00BQ,115 |
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 9.22 грн |
74LV00BQ,115 |
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
Description: IC GATE NAND 4CH 2-INP 14DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1V ~ 5.5V
Current - Output High, Low: 12mA, 12mA
Number of Inputs: 2
Supplier Device Package: 14-DHVQFN (2.5x3)
Input Logic Level - High: 0.9V ~ 2V
Input Logic Level - Low: 0.3V ~ 0.8V
Max Propagation Delay @ V, Max CL: 6.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 40 µA
на замовлення 4075 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
9+ | 31.99 грн |
11+ | 25.26 грн |
25+ | 23.14 грн |
100+ | 16.16 грн |
250+ | 14.65 грн |
500+ | 12.12 грн |
1000+ | 8.94 грн |
74LV00D,118 |
Виробник: Nexperia USA Inc.
Description: IC GATE NAND 4CH 2-INP 14SO
Description: IC GATE NAND 4CH 2-INP 14SO
на замовлення 5927 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 35.55 грн |
10+ | 28 грн |
25+ | 25.63 грн |
100+ | 17.89 грн |
250+ | 16.21 грн |
500+ | 13.42 грн |
1000+ | 9.9 грн |
PHPT61002NYCLHX |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 100V 2A LFPAK56 PWRSO8
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
Frequency - Transition: 140MHz
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 25 W
Description: TRANS NPN 100V 2A LFPAK56 PWRSO8
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 10V
Frequency - Transition: 140MHz
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 25 W
товар відсутній
BUK9Y2R4-40HX |
Виробник: Nexperia USA Inc.
Description: BUK9Y2R4-40H/SOT669/LFPAK
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Vgs (Max): +16V, -10V
Description: BUK9Y2R4-40H/SOT669/LFPAK
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Vgs (Max): +16V, -10V
товар відсутній
BUK6Y25-40PX |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 40V 38A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 38A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
BUK6Y25-40PX |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 40V 38A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 38A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
BUK6Y20-30PX |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 41A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 41A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Qualification: AEC-Q101
товар відсутній
BUK6Y20-30PX |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 41A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 41A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.6A, 10V
Power Dissipation (Max): 66W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1408 pF @ 15 V
Qualification: AEC-Q101
товар відсутній
BUK6Y12-30PX |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 67A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 106W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 15 V
Description: MOSFET P-CH 30V 67A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 106W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 15 V
товар відсутній
BUK6Y12-30PX |
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 67A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 106W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 15 V
Description: MOSFET P-CH 30V 67A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 106W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 15 V
товар відсутній