Продукція > NEXPERIA USA INC. > Всі товари виробника NEXPERIA USA INC. (31225) > Сторінка 92 з 521
| Фото | Назва | Виробник | Інформація |
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PSMN0R9-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PSMN1R1-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PSMN1R2-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN1R2-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PSMN1R0-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V |
на замовлення 19500 шт: термін постачання 21-31 дні (днів) |
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PSMN2R2-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN2R2-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V Power Dissipation (Max): 141W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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PSMN1R0-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V |
на замовлення 19787 шт: термін постачання 21-31 дні (днів) |
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PSMN1R1-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V |
на замовлення 3351 шт: термін постачання 21-31 дні (днів) |
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PSMN1R2-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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PSMN0R9-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V |
на замовлення 3160 шт: термін постачання 21-31 дні (днів) |
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PSMN1R2-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V Power Dissipation (Max): 215W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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PSMN2R2-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V |
на замовлення 4373 шт: термін постачання 21-31 дні (днів) |
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PSMN2R2-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V Power Dissipation (Max): 141W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V |
на замовлення 12551 шт: термін постачання 21-31 дні (днів) |
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PSMN4R0-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 84A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMN2R6-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMN2R9-25YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 25V 100A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMN4R5-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 84A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PSMN2R6-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V |
на замовлення 1398 шт: термін постачання 21-31 дні (днів) |
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PSMN4R5-30YLC,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 84A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 1.95V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V |
на замовлення 692 шт: термін постачання 21-31 дні (днів) |
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BZX84-A5V1,215 | Nexperia USA Inc. |
Description: DIODE ZENER 5.1V 250MW TO236ABPackaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: TO-236AB Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
на замовлення 54237 шт: термін постачання 21-31 дні (днів) |
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PESD3V3L5UF,115 | Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM 12V 6XSONPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TA) Applications: General Purpose Capacitance @ Frequency: 22pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 6-XSON, SOT886 (1.45x1) Unidirectional Channels: 5 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 25W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZA856AVL,115 | Nexperia USA Inc. |
Description: TVS DIODE 5.6VWM 5TSSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 17pF @ 1MHz Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: 5-TSSOP Unidirectional Channels: 4 Power - Peak Pulse: 6W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2550 шт: термін постачання 21-31 дні (днів) |
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BCM857BS,135 | Nexperia USA Inc. |
Description: TRANS 2PNP 45V 100MA 6-TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Matched Pair Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 175MHz Supplier Device Package: 6-TSSOP Part Status: Active |
на замовлення 76704 шт: термін постачання 21-31 дні (днів) |
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PMEG4030ER,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 3A SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 250pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-123W Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PTVS15VS1UR,115 | Nexperia USA Inc. |
Description: TVS DIODE 15VWM 24.4VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 16.4A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4105 шт: термін постачання 21-31 дні (днів) |
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BZX84-A4V7,215 | Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 250MW TO236ABPackaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: TO-236AB Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 2 V |
на замовлення 6525 шт: термін постачання 21-31 дні (днів) |
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PMEG3050EP,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTK 30V 5A SOD128/CFP5Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 800pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 360 mV @ 5 A Current - Reverse Leakage @ Vr: 8 mA @ 30 V |
на замовлення 18631 шт: термін постачання 21-31 дні (днів) |
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PMEG2005EL,315 | Nexperia USA Inc. |
Description: DIODE SCHOTTK 20V 500MA DFN10062Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 30pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1139 шт: термін постачання 21-31 дні (днів) |
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PTVS18VS1UR,115 | Nexperia USA Inc. |
Description: TVS DIODE 18VWM 29.2VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 13.7A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 220200 шт: термін постачання 21-31 дні (днів) |
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BZV90-C5V1,115 | Nexperia USA Inc. |
Description: DIODE ZENER 5.1V 1.5W SOT223Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SOT-223 Part Status: Active Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1165 шт: термін постачання 21-31 дні (днів) |
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PESD5V0L4UW,115 | Nexperia USA Inc. |
Description: TVS DIODE 5VWM 13VC SOT665Packaging: Cut Tape (CT) Package / Case: SOT-665 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TA) Applications: General Purpose Capacitance @ Frequency: 16pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SOT-665 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.46V Voltage - Clamping (Max) @ Ipp: 13V Power - Peak Pulse: 30W Power Line Protection: No Part Status: Active |
на замовлення 1925 шт: термін постачання 21-31 дні (днів) |
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PMEG3030EP,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTK 30V 3A SOD128/CFP5Packaging: Cut Tape (CT) Package / Case: SOD-128 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 470pF @ 1V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 360 mV @ 3 A Current - Reverse Leakage @ Vr: 5 mA @ 30 V |
на замовлення 20638 шт: термін постачання 21-31 дні (днів) |
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PTVS12VS1UR,115 | Nexperia USA Inc. |
Description: TVS DIODE 12VWM 19.9VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 20.1A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5457 шт: термін постачання 21-31 дні (днів) |
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PMP4501Y,115 | Nexperia USA Inc. |
Description: TRANS 2NPN 45V 100MA 6-TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Matched Pair Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3637 шт: термін постачання 21-31 дні (днів) |
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PMBTA45,215 | Nexperia USA Inc. |
Description: TRANS NPN 500V 0.15A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 90mV @ 6mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V Frequency - Transition: 35MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 300 mW Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PTVS6V0S1UR,115 | Nexperia USA Inc. |
Description: TVS DIODE 6VWM 10.3VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 38.8A Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.67V Voltage - Clamping (Max) @ Ipp: 10.3V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4455 шт: термін постачання 21-31 дні (днів) |
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PMD3001D,115 | Nexperia USA Inc. |
Description: IC MOSFET DRIVER 6TSOPPackaging: Cut Tape (CT) Voltage - Rated: 40V Package / Case: SC-74, SOT-457 Current Rating (Amps): 1A Mounting Type: Surface Mount Transistor Type: NPN, PNP (Emitter Coupled) Applications: MOSFET Driver Supplier Device Package: 6-TSOP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 167771 шт: термін постачання 21-31 дні (днів) |
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PBSS5520X,135 | Nexperia USA Inc. |
Description: TRANS PNP 20V 5A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 500mA, 5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.6 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 696 шт: термін постачання 21-31 дні (днів) |
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PBSS5350X,135 | Nexperia USA Inc. |
Description: TRANS PNP 50V 3A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.6 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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1PS70SB82,115 | Nexperia USA Inc. |
Description: DIODE SCHOTTKY 15V 30MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 1pF @ 0V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOT-323 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 mA Current - Reverse Leakage @ Vr: 200 nA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 13687 шт: термін постачання 21-31 дні (днів) |
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1PS76SB17,115 | Nexperia USA Inc. |
Description: RF DIODE SCHOTTKY 4V SOD-323Packaging: Cut Tape (CT) Package / Case: SC-76, SOD-323 Diode Type: Schottky - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.65pF @ 0.5V, 1MHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: SOD-323 Part Status: Active Current - Max: 30 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 313462 шт: термін постачання 21-31 дні (днів) |
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PBSS4140U,115 | Nexperia USA Inc. |
Description: TRANS NPN 40V 1A SOT-323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 350 mW Grade: Automotive Qualification: AEC-Q100 |
на замовлення 8084 шт: термін постачання 21-31 дні (днів) |
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BZX84-A5V6,215 | Nexperia USA Inc. |
Description: DIODE ZENER 5.6V 250MW TO236ABPackaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: TO-236AB Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PMP4201Y,115 | Nexperia USA Inc. |
Description: TRANS 2NPN 45V 100MA 6-TSSOPPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Matched Pair Operating Temperature: 150°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 8506 шт: термін постачання 21-31 дні (днів) |
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PBHV8115T,215 | Nexperia USA Inc. |
Description: TRANS NPN 150V 1A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Frequency - Transition: 30MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 300 mW |
на замовлення 179 шт: термін постачання 21-31 дні (днів) |
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PBSS5540X,135 | Nexperia USA Inc. |
Description: TRANS PNP 40V 4A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 60MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.6 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1638 шт: термін постачання 21-31 дні (днів) |
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PHT6NQ10T,135 | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 3A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-223 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V |
на замовлення 12204 шт: термін постачання 21-31 дні (днів) |
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PESD3V3S1UL,315 | Nexperia USA Inc. |
Description: TVS DIODE 3.3VWM 20VC DFN1006-2Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TA) Capacitance @ Frequency: 207pF @ 1MHz Current - Peak Pulse (10/1000µs): 15A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.2V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 150W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX884-C4V7,315 | Nexperia USA Inc. |
Description: DIODE ZENER 4.7V 250MW DFN1006-2Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 2 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 9250 шт: термін постачання 21-31 дні (днів) |
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BZX884-B8V2,315 | Nexperia USA Inc. |
Description: DIODE ZENER 8.2V 250MW DFN1006-2Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SOD-882 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DFN1006-2 Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 30127 шт: термін постачання 21-31 дні (днів) |
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PBSS4350X,135 | Nexperia USA Inc. |
Description: TRANS NPN 50V 3A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.6 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3584 шт: термін постачання 21-31 дні (днів) |
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PMBTA44,215 | Nexperia USA Inc. |
Description: TRANS NPN 400V 0.3A TO-236ABPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Frequency - Transition: 20MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PTVS10VS1UR,115 | Nexperia USA Inc. |
Description: TVS DIODE 10VWM 17VC SOD123WPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TA) Current - Peak Pulse (10/1000µs): 23.5A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 400W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 28237 шт: термін постачання 21-31 дні (днів) |
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BZX84-A6V2,215 | Nexperia USA Inc. |
Description: DIODE ZENER 6.2V 250MW TO236ABPackaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: TO-236AB Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 3 µA @ 4 V |
на замовлення 3477 шт: термін постачання 21-31 дні (днів) |
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BZX84-A10,215 | Nexperia USA Inc. |
Description: DIODE ZENER 10V 250MW TO236ABPackaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: TO-236AB Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V |
на замовлення 3989 шт: термін постачання 21-31 дні (днів) |
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BZX84-A15,215 | Nexperia USA Inc. |
Description: DIODE ZENER 15V 250MW TO236ABPackaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: TO-236AB Part Status: Active Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PBSS4250X,135 | Nexperia USA Inc. |
Description: TRANS NPN 50V 2A SOT-89Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-89 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 7724 шт: термін постачання 21-31 дні (днів) |
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BCV62A,215 | Nexperia USA Inc. |
Description: TRANS PNP 30V 100MA DUAL SOT143BPackaging: Cut Tape (CT) Voltage - Rated: 30V Package / Case: TO-253-4, TO-253AA Current Rating (Amps): 100mA Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Current Mirror Applications: Current Mirror Supplier Device Package: SOT-143B Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PBSS8110Z,135 | Nexperia USA Inc. |
Description: TRANS NPN 100V 1A SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V Frequency - Transition: 100MHz Supplier Device Package: SOT-223 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.4 W Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3985 шт: термін постачання 21-31 дні (днів) |
|
| PSMN0R9-25YLC,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 50.83 грн |
| 3000+ | 45.59 грн |
| PSMN1R1-25YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 51.90 грн |
| 3000+ | 46.56 грн |
| PSMN1R2-25YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 29.47 грн |
| PSMN1R2-30YLC,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 37.46 грн |
| 3000+ | 33.44 грн |
| PSMN1R0-30YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
на замовлення 19500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 62.73 грн |
| 3000+ | 57.31 грн |
| PSMN2R2-25YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 27.27 грн |
| PSMN2R2-30YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 27.84 грн |
| 3000+ | 24.72 грн |
| 4500+ | 23.65 грн |
| 7500+ | 21.07 грн |
| 10500+ | 20.64 грн |
| PSMN1R0-30YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
на замовлення 19787 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 196.34 грн |
| 10+ | 122.27 грн |
| 100+ | 84.43 грн |
| 500+ | 65.83 грн |
| PSMN1R1-25YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
на замовлення 3351 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.08 грн |
| 10+ | 103.43 грн |
| 100+ | 70.74 грн |
| 500+ | 53.27 грн |
| PSMN1R2-25YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 103.18 грн |
| 10+ | 62.58 грн |
| 100+ | 41.69 грн |
| 500+ | 30.72 грн |
| PSMN0R9-25YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
на замовлення 3160 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 164.00 грн |
| 10+ | 101.43 грн |
| 100+ | 69.36 грн |
| 500+ | 52.19 грн |
| PSMN1R2-30YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 126.28 грн |
| 10+ | 77.26 грн |
| 100+ | 52.11 грн |
| 500+ | 38.77 грн |
| PSMN2R2-25YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
на замовлення 4373 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 95.48 грн |
| 10+ | 58.28 грн |
| 100+ | 38.72 грн |
| 500+ | 28.47 грн |
| PSMN2R2-30YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
на замовлення 12551 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 97.79 грн |
| 10+ | 59.46 грн |
| 100+ | 39.52 грн |
| 500+ | 29.06 грн |
| PSMN4R0-25YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Description: MOSFET N-CH 25V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
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| PSMN2R6-30YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
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| PSMN2R9-25YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 25A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2083 pF @ 12 V
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| PSMN4R5-30YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
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од. на суму грн.
| PSMN2R6-30YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
на замовлення 1398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 27.80 грн |
| 100+ | 27.33 грн |
| PSMN4R5-30YLC,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
на замовлення 692 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.73 грн |
| 10+ | 69.55 грн |
| 50+ | 51.86 грн |
| 100+ | 43.28 грн |
| BZX84-A5V1,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
на замовлення 54237 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 16.94 грн |
| 23+ | 13.35 грн |
| 100+ | 10.17 грн |
| 500+ | 8.06 грн |
| PESD3V3L5UF,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 12V 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TVS DIODE 3.3VWM 12V 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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| BZA856AVL,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 5.6VWM 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: 5-TSSOP
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TVS DIODE 5.6VWM 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: 5-TSSOP
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.72 грн |
| 19+ | 16.24 грн |
| 100+ | 10.21 грн |
| 500+ | 7.15 грн |
| 1000+ | 6.36 грн |
| BCM857BS,135 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS 2PNP 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Description: TRANS 2PNP 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
на замовлення 76704 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.57 грн |
| 16+ | 18.83 грн |
| 100+ | 11.92 грн |
| 500+ | 8.38 грн |
| 1000+ | 7.47 грн |
| 2000+ | 6.71 грн |
| 5000+ | 5.79 грн |
| PMEG4030ER,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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од. на суму грн.
| PTVS15VS1UR,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 15VWM 24.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15VWM 24.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 16.4A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4105 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.72 грн |
| 17+ | 18.09 грн |
| 100+ | 12.24 грн |
| 500+ | 8.47 грн |
| 1000+ | 6.93 грн |
| BZX84-A4V7,215 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Description: DIODE ZENER 4.7V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
на замовлення 6525 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.42 грн |
| 15+ | 20.69 грн |
| 100+ | 14.07 грн |
| 500+ | 9.82 грн |
| 1000+ | 8.76 грн |
| PMEG3050EP,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 30V 5A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 5 A
Current - Reverse Leakage @ Vr: 8 mA @ 30 V
Description: DIODE SCHOTTK 30V 5A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 800pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 5 A
Current - Reverse Leakage @ Vr: 8 mA @ 30 V
на замовлення 18631 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.13 грн |
| 10+ | 31.88 грн |
| 100+ | 20.60 грн |
| 500+ | 14.77 грн |
| 1000+ | 13.29 грн |
| PMEG2005EL,315 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 20V 500MA DFN10062
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTK 20V 500MA DFN10062
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1139 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.10 грн |
| 22+ | 13.72 грн |
| 50+ | 9.85 грн |
| 100+ | 8.04 грн |
| PTVS18VS1UR,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 220200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.42 грн |
| 15+ | 20.98 грн |
| 100+ | 13.37 грн |
| 500+ | 9.44 грн |
| 1000+ | 8.43 грн |
| BZV90-C5V1,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.1V 1.5W SOT223
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-223
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 5.1V 1.5W SOT223
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOT-223
Part Status: Active
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1165 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.35 грн |
| 10+ | 31.66 грн |
| 100+ | 21.74 грн |
| 500+ | 15.66 грн |
| PESD5V0L4UW,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 5VWM 13VC SOT665
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-665
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 13VC SOT665
Packaging: Cut Tape (CT)
Package / Case: SOT-665
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-665
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 30W
Power Line Protection: No
Part Status: Active
на замовлення 1925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.79 грн |
| 25+ | 12.16 грн |
| 100+ | 7.59 грн |
| 500+ | 5.26 грн |
| 1000+ | 4.66 грн |
| PMEG3030EP,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTK 30V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Description: DIODE SCHOTTK 30V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 470pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 360 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
на замовлення 20638 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.89 грн |
| 12+ | 26.32 грн |
| 100+ | 16.86 грн |
| 500+ | 12.01 грн |
| 1000+ | 10.78 грн |
| PTVS12VS1UR,115 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 12VWM 19.9VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5457 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.72 грн |
| 18+ | 17.28 грн |
| 100+ | 12.56 грн |
| 500+ | 7.93 грн |
| 1000+ | 7.26 грн |
| PMP4501Y,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3637 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.51 грн |
| 11+ | 28.62 грн |
| 50+ | 20.81 грн |
| 100+ | 17.14 грн |
| PMBTA45,215 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 500V 0.15A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 90mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Frequency - Transition: 35MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 500V 0.15A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 90mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 10V
Frequency - Transition: 35MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| PTVS6V0S1UR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 6VWM 10.3VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 6VWM 10.3VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4455 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.42 грн |
| 15+ | 21.06 грн |
| 100+ | 13.41 грн |
| 500+ | 9.47 грн |
| 1000+ | 8.46 грн |
| PMD3001D,115 |
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Виробник: Nexperia USA Inc.
Description: IC MOSFET DRIVER 6TSOP
Packaging: Cut Tape (CT)
Voltage - Rated: 40V
Package / Case: SC-74, SOT-457
Current Rating (Amps): 1A
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Applications: MOSFET Driver
Supplier Device Package: 6-TSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC MOSFET DRIVER 6TSOP
Packaging: Cut Tape (CT)
Voltage - Rated: 40V
Package / Case: SC-74, SOT-457
Current Rating (Amps): 1A
Mounting Type: Surface Mount
Transistor Type: NPN, PNP (Emitter Coupled)
Applications: MOSFET Driver
Supplier Device Package: 6-TSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 167771 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 16.94 грн |
| 27+ | 11.27 грн |
| 30+ | 9.99 грн |
| 100+ | 8.03 грн |
| 250+ | 7.39 грн |
| 500+ | 7.01 грн |
| 1000+ | 6.58 грн |
| PBSS5520X,135 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 20V 5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 20V 5A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 696 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.20 грн |
| 11+ | 27.21 грн |
| 100+ | 17.46 грн |
| 500+ | 12.44 грн |
| PBSS5350X,135 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 390mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 1PS70SB82,115 |
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Виробник: Nexperia USA Inc.
Description: DIODE SCHOTTKY 15V 30MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 mA
Current - Reverse Leakage @ Vr: 200 nA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 15V 30MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 mA
Current - Reverse Leakage @ Vr: 200 nA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13687 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.34 грн |
| 15+ | 20.83 грн |
| 100+ | 16.51 грн |
| 500+ | 11.70 грн |
| 1000+ | 10.47 грн |
| 1PS76SB17,115 |
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Виробник: Nexperia USA Inc.
Description: RF DIODE SCHOTTKY 4V SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.65pF @ 0.5V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOD-323
Part Status: Active
Current - Max: 30 mA
Grade: Automotive
Qualification: AEC-Q100
Description: RF DIODE SCHOTTKY 4V SOD-323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.65pF @ 0.5V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: SOD-323
Part Status: Active
Current - Max: 30 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 313462 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.73 грн |
| 14+ | 22.24 грн |
| 100+ | 14.12 грн |
| 500+ | 9.95 грн |
| 1000+ | 8.88 грн |
| PBSS4140U,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 40V 1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 40V 1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8084 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.64 грн |
| 21+ | 14.46 грн |
| 100+ | 9.09 грн |
| 500+ | 6.34 грн |
| 1000+ | 5.63 грн |
| BZX84-A5V6,215 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 5.6V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
товару немає в наявності
В кошику
од. на суму грн.
| PMP4201Y,115 |
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Виробник: Nexperia USA Inc.
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS 2NPN 45V 100MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual) Matched Pair
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 8506 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.35 грн |
| 12+ | 25.06 грн |
| 100+ | 16.04 грн |
| 500+ | 11.38 грн |
| 1000+ | 10.20 грн |
| PBHV8115T,215 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 150V 1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 300 mW
Description: TRANS NPN 150V 1A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 300 mW
на замовлення 179 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.12 грн |
| 12+ | 25.65 грн |
| 100+ | 16.33 грн |
| PBSS5540X,135 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 40V 4A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 40V 4A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 375mV @ 500mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1638 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 46.97 грн |
| 11+ | 28.03 грн |
| 100+ | 18.01 грн |
| 500+ | 12.85 грн |
| 1000+ | 11.54 грн |
| PHT6NQ10T,135 |
![]() |
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V
Description: MOSFET N-CH 100V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 1.8W (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 633 pF @ 25 V
на замовлення 12204 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.43 грн |
| 10+ | 34.70 грн |
| 100+ | 23.85 грн |
| 500+ | 22.36 грн |
| PESD3V3S1UL,315 |
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Виробник: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 20VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 207pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 20VC DFN1006-2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Frequency: 207pF @ 1MHz
Current - Peak Pulse (10/1000µs): 15A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.2V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BZX884-C4V7,315 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 4.7V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 4.7V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 9250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.78 грн |
| 41+ | 7.27 грн |
| 100+ | 4.86 грн |
| 500+ | 3.47 грн |
| 1000+ | 3.10 грн |
| 2000+ | 2.78 грн |
| 5000+ | 2.39 грн |
| BZX884-B8V2,315 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 8.2V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q100
Description: DIODE ZENER 8.2V 250MW DFN1006-2
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DFN1006-2
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 30127 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.09 грн |
| 35+ | 8.53 грн |
| 100+ | 3.98 грн |
| 500+ | 3.44 грн |
| 1000+ | 3.14 грн |
| 2000+ | 3.04 грн |
| 5000+ | 2.89 грн |
| PBSS4350X,135 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 50V 3A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3584 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.11 грн |
| 16+ | 19.65 грн |
| 100+ | 12.49 грн |
| 500+ | 8.80 грн |
| 1000+ | 7.85 грн |
| 2000+ | 7.06 грн |
| PMBTA44,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: TRANS NPN 400V 0.3A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 250 mW
Description: TRANS NPN 400V 0.3A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Frequency - Transition: 20MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 250 mW
товару немає в наявності
В кошику
од. на суму грн.
| PTVS10VS1UR,115 |
![]() |
Виробник: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 10VWM 17VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 28237 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 35.42 грн |
| 15+ | 20.98 грн |
| 100+ | 13.37 грн |
| 500+ | 9.44 грн |
| 1000+ | 8.43 грн |
| BZX84-A6V2,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 6.2V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
Description: DIODE ZENER 6.2V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
на замовлення 3477 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 53.13 грн |
| 10+ | 31.51 грн |
| 50+ | 22.94 грн |
| 100+ | 18.92 грн |
| BZX84-A10,215 |
![]() |
Виробник: Nexperia USA Inc.
Description: DIODE ZENER 10V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Description: DIODE ZENER 10V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 3989 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.72 грн |
| 16+ | 18.61 грн |
| 100+ | 11.69 грн |
| 500+ | 9.43 грн |
| 1000+ | 8.01 грн |
| BZX84-A15,215 |
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Виробник: Nexperia USA Inc.
Description: DIODE ZENER 15V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Description: DIODE ZENER 15V 250MW TO236AB
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: TO-236AB
Part Status: Active
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PBSS4250X,135 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 50V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 50V 2A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7724 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.96 грн |
| 14+ | 21.58 грн |
| 50+ | 15.60 грн |
| 100+ | 12.81 грн |
| BCV62A,215 |
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Виробник: Nexperia USA Inc.
Description: TRANS PNP 30V 100MA DUAL SOT143B
Packaging: Cut Tape (CT)
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Current Mirror
Applications: Current Mirror
Supplier Device Package: SOT-143B
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS PNP 30V 100MA DUAL SOT143B
Packaging: Cut Tape (CT)
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Current Mirror
Applications: Current Mirror
Supplier Device Package: SOT-143B
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| PBSS8110Z,135 |
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Виробник: Nexperia USA Inc.
Description: TRANS NPN 100V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
Grade: Automotive
Qualification: AEC-Q100
Description: TRANS NPN 100V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 250mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3985 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.27 грн |
| 13+ | 23.36 грн |
| 100+ | 14.94 грн |
| 500+ | 10.59 грн |
| 1000+ | 9.48 грн |
| 2000+ | 8.55 грн |















