| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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XS3A1T3157GSH | NEXPERIA |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; SPDT-Z; XSON6 Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Output configuration: SPDT-Z Case: XSON6 Supply voltage: 1.4...4.3V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C |
на замовлення 4436 шт: термін постачання 14-30 дні (днів) |
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PDTC143EU,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
на замовлення 7059 шт: термін постачання 14-30 дні (днів) |
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| PDTC143ET-QR | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PDTC143ET,235 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 30 Mounting: SMD Kind of package: 11 inch reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PDTC143EU-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PMBT3904MB,315 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 590mW Case: DFN1006B-3; SOT883B Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PMBT3904,235 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 30...300 Mounting: SMD Kind of package: 11 inch reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PMBT3904M,315 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 590mW; DFN1006-3,SOT883 Type of transistor: NPN Polarisation: bipolar Power dissipation: 590mW Case: DFN1006-3; SOT883 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Collector current: 0.2A Collector-emitter voltage: 40V Current gain: 100...300 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PMBT3904RAZ | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 480mW; DFN1412-6,SOT1268-1 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.48W Case: DFN1412-6; SOT1268-1 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BAT754C,215 | NEXPERIA |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Max. forward impulse current: 0.6A Kind of package: reel; tape |
на замовлення 6 шт: термін постачання 14-30 дні (днів) |
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74HC541PW,118 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Technology: CMOS Mounting: SMD Case: TSSOP20 Family: HC Kind of package: reel; tape Kind of output: 3-state Number of channels: 8 |
на замовлення 3934 шт: термін постачання 14-30 дні (днів) |
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HEF40106BT,653 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 3÷15VDC; reel,tape; HEF4000B Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...15V DC Kind of package: reel; tape Kind of input: with Schmitt trigger Family: HEF4000B |
на замовлення 4160 шт: термін постачання 14-30 дні (днів) |
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HEF40106BTT,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 6; CMOS; SMD; TTSOP14; 4.5÷15.5VDC Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: TTSOP14 Supply voltage: 4.5...15.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV99-QR | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Leakage current: 50µA Power dissipation: 0.25W Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BUK7V4R2-40HX | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 69.5A; Idm: 393A; 85W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Gate charge: 37nC On-state resistance: 8.8mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 85W Pulsed drain current: 393A Drain current: 69.5A Application: automotive industry Kind of channel: enhancement Type of transistor: N-MOSFET x2 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PSMN4R2-40VSHX | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 69.5A; 85W Mounting: SMD Case: LFPAK56D; SOT1205 Kind of package: reel; tape Gate charge: 37nC On-state resistance: 8.8mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 85W Pulsed drain current: 393A Drain current: 69.5A Technology: NextPowerS3 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCP56T-QF | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 1A; 1.8W; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.8W Case: SC73; SOT223 Current gain: 63...250 Mounting: SMD Kind of package: reel; tape Frequency: 155MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZX384-C15,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOD323 Max. load current: 0.25A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0S1UA,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 6.8V; unidirectional; SOD323 Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.8V Semiconductor structure: unidirectional Case: SOD323 Mounting: SMD Leakage current: 4µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0L5UY,115 | NEXPERIA |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6; Ch: 5 Type of diode: TVS array Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.4...7.2V Max. forward impulse current: 2.5A Semiconductor structure: common anode; fivefold; unidirectional Case: SC88; SOT363; TSSOP6 Mounting: SMD Leakage current: 25nA Peak pulse power dissipation: 25W Number of channels: 5 Application: automotive industry |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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PESD5V0L2BT,215 | NEXPERIA |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.6V; 13A; 350W; bidirectional,double; SOT23 Type of diode: TVS array Version: ESD Max. off-state voltage: 5V Breakdown voltage: 7.6V Max. forward impulse current: 13A Semiconductor structure: bidirectional; double Case: SOT23 Mounting: SMD Leakage current: 1µA Peak pulse power dissipation: 0.35kW Number of channels: 2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0L5UV,115 | NEXPERIA |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.8V; 2.5A; 25W; SOT666; Ch: 3; ESD Type of diode: TVS array Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.8V Max. forward impulse current: 2.5A Semiconductor structure: common anode; fivefold; unidirectional Case: SOT666 Mounting: SMD Leakage current: 25nA Peak pulse power dissipation: 25W Number of channels: 3 Application: universal |
на замовлення 129 шт: термін постачання 14-30 дні (днів) |
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PESD5V0S1BA,115 | NEXPERIA |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 130W; 7.5V; 12A; bidirectional; SOD323 Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 7.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Peak pulse power dissipation: 130W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0U2BT,215 | NEXPERIA |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 5.5÷9.5V; bidirectional; SOT23 Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Semiconductor structure: bidirectional Case: SOT23 Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0U1UA,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 6.8V; 1.3A; unidirectional; SOD323; 2.6pF Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.8V Max. forward impulse current: 1.3A Semiconductor structure: unidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Capacitance: 2.6pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0L1UA,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 6.8V; 3.5A; unidirectional; SOD323; 30pF Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.8V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Case: SOD323 Mounting: SMD Leakage current: 0.1µA Capacitance: 30pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0S1BB,115 | NEXPERIA |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 130W; 7.5V; 12A; bidirectional; SOD523 Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 7.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SOD523 Mounting: SMD Leakage current: 0.1µA Peak pulse power dissipation: 130W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0S2BT,215 | NEXPERIA |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.5V; 12A; 130W; bidirectional,double; SOT23 Type of diode: TVS array Version: ESD Max. off-state voltage: 5V Breakdown voltage: 7.5V Max. forward impulse current: 12A Semiconductor structure: bidirectional; double Case: SOT23 Mounting: SMD Leakage current: 0.1µA Peak pulse power dissipation: 130W Number of channels: 2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0U1BA,115 | NEXPERIA |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 5.5÷9.5V; bidirectional; SC76,SOD323 Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Semiconductor structure: bidirectional Case: SC76; SOD323 Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0S1BL,315 | NEXPERIA |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 130W; 5.5÷9.5V; bidirectional; DFN1006-2,SOD882 Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 5.5...9.5V Semiconductor structure: bidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Peak pulse power dissipation: 130W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0C1BSFYL | NEXPERIA |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 10V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 10V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0S2UAT,215 | NEXPERIA |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 260W; 6.4÷7.2V; 15A; unidirectional; SOT23 Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.4...7.2V Max. forward impulse current: 15A Semiconductor structure: unidirectional Case: SOT23 Mounting: SMD Leakage current: 1µA Peak pulse power dissipation: 260W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0S2UQ,115 | NEXPERIA |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.8V; 15A; 150W; SOT663; Ch: 2; ESD Type of diode: TVS array Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.8V Max. forward impulse current: 15A Semiconductor structure: common anode; double; unidirectional Case: SOT663 Mounting: SMD Leakage current: 0.3µA Peak pulse power dissipation: 0.15kW Number of channels: 2 Application: universal |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PESD5V0L1UL,315 | NEXPERIA |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 42W; 6.4÷7.2V; 3.5A; unidirectional Type of diode: TVS Version: ESD Max. off-state voltage: 5V Breakdown voltage: 6.4...7.2V Max. forward impulse current: 3.5A Semiconductor structure: unidirectional Case: DFN1006-2; SOD882 Mounting: SMD Leakage current: 0.1µA Peak pulse power dissipation: 42W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PDTC143TT,215 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 200 Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 47kΩ |
на замовлення 107 шт: термін постачання 14-30 дні (днів) |
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PDTC143XU,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 50 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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PDTC143TU,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 200 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ |
на замовлення 71 шт: термін постачання 14-30 дні (днів) |
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74HC688D,653 | NEXPERIA |
Category: ComparatorsDescription: IC: digital; 8bit,comparator; CMOS; SMD; SO20-W; HC; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: 8bit; comparator Mounting: SMD Case: SO20-W Family: HC Kind of package: reel; tape Operating temperature: -40...125°C Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 1149 шт: термін постачання 14-30 дні (днів) |
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PMBT2907,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 300 Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BAV20,113 | NEXPERIA |
Category: THT universal diodesDescription: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: reel Max. forward impulse current: 9A Case: SOD27 Max. forward voltage: 1.25V Reverse recovery time: 50ns Power dissipation: 0.4W Leakage current: 0.1mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74HC20PW,112 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; tube; HC Type of integrated circuit: digital Case: TSSOP14 Number of channels: dual; 2 Mounting: SMD Kind of package: tube Family: HC Kind of gate: NAND Number of inputs: 4 Technology: CMOS |
на замовлення 173 шт: термін постачання 14-30 дні (днів) |
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74HCT08PW,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Family: HCT Delay time: 36ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 74HCT08BQ,115 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Family: HCT Delay time: 36ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74HCU04D,653 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape Type of integrated circuit: digital Technology: CMOS Number of channels: hex; 6 Kind of gate: NOT Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Supply voltage: 2...6V DC Family: HCU Case: SO14 |
на замовлення 2890 шт: термін постачання 14-30 дні (днів) |
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| 74HCU04BQ,115 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; DHVQFN14; HCU Type of integrated circuit: digital Technology: CMOS Number of channels: 6 Kind of integrated circuit: hex; inverter Kind of gate: NOT Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of inputs: 1 Supply voltage: 2...6V DC Family: HCU Case: DHVQFN14 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PESD2V0Y1BSFYL | NEXPERIA |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 3.3V; bidirectional; DSN0603-2,SOD962-2 Type of diode: TVS Version: ESD Max. off-state voltage: 2V Breakdown voltage: 3.3V Semiconductor structure: bidirectional Case: DSN0603-2; SOD962-2 Mounting: SMD Leakage current: 50nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
74HC238D,653 | NEXPERIA |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: SO16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Quiescent current: 160µA |
на замовлення 4781 шт: термін постачання 14-30 дні (днів) |
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74HC238PW,118 | NEXPERIA |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 3 to 8 line,decoder,demultiplexer; IN: 3; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Technology: CMOS Mounting: SMD Case: TSSOP16 Operating temperature: -40...125°C Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 3 |
на замовлення 387 шт: термін постачання 14-30 дні (днів) |
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| 74HC238BQ,115 | NEXPERIA |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; CMOS Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer Number of inputs: 6 Mounting: SMD Case: DHVQFN16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Technology: CMOS Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74LVC1T45GM-Q100X | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 1bit,bidirectional,transceiver,translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: 1bit; bidirectional; transceiver; translator Mounting: SMD Case: XSON6 Number of channels: 1 Kind of package: reel; tape Kind of output: 3-state Operating temperature: -40...125°C Supply voltage: 1.2...5.5V DC Family: LVC Technology: CMOS |
на замовлення 3065 шт: термін постачання 14-30 дні (днів) |
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74LVC1T45GW-Q100H | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 1bit,bidirectional,transceiver,translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: 1bit; bidirectional; transceiver; translator Mounting: SMD Case: TSSOP6 Number of channels: 1 Kind of package: reel; tape Kind of output: 3-state Operating temperature: -40...125°C Supply voltage: 1.2...5.5V DC Family: LVC Technology: CMOS |
на замовлення 974 шт: термін постачання 14-30 дні (днів) |
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| 74LVC1T45GM,115 | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 1bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 1bit; 3-state; transceiver; translator Mounting: SMD Case: XSON6 Number of channels: 1 Kind of package: reel; tape Kind of output: 3-state Operating temperature: -40...125°C Supply voltage: 1.2...5.5V DC Family: LVC Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC1T45GM,132 | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 1bit,bidirectional,transceiver,translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: 1bit; bidirectional; transceiver; translator Mounting: SMD Case: XSON6 Number of channels: 1 Kind of package: reel; tape Kind of output: 3-state Operating temperature: -40...125°C Supply voltage: 1.2...5.5V DC Family: LVC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC1T45GN,132 | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 1bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 1bit; 3-state; transceiver; translator Mounting: SMD Case: XSON6 Number of channels: 1 Kind of package: reel; tape Kind of output: 3-state Operating temperature: -40...125°C Supply voltage: 1.2...5.5V DC Family: LVC Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LVC1T45GS,132 | NEXPERIA |
Category: Level translatorsDescription: IC: digital; 1bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 1bit; 3-state; transceiver; translator Mounting: SMD Case: XSON6 Number of channels: 1 Kind of package: reel; tape Kind of output: 3-state Operating temperature: -40...125°C Supply voltage: 1.2...5.5V DC Family: LVC Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
74HCT574D,653 | NEXPERIA |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS,TTL; SMD; SO20; HCT; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS; TTL Mounting: SMD Case: SO20 Operating temperature: -40...125°C Family: HCT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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PMV65XPEAR | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -120mA Case: SOT23; TO236AB On-state resistance: 114mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PMV65XPER | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -12A Case: SOT23; TO236AB On-state resistance: 114mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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PMV65XP,215 | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 135mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 833mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PMV65XPVL | NEXPERIA |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -16A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| XS3A1T3157GSH |
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Виробник: NEXPERIA
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPDT-Z; XSON6
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Output configuration: SPDT-Z
Case: XSON6
Supply voltage: 1.4...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; SPDT-Z; XSON6
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Output configuration: SPDT-Z
Case: XSON6
Supply voltage: 1.4...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
на замовлення 4436 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.21 грн |
| 33+ | 12.79 грн |
| 38+ | 11.36 грн |
| 100+ | 10.77 грн |
| 250+ | 9.93 грн |
| 500+ | 9.51 грн |
| 1000+ | 8.58 грн |
| PDTC143EU,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
на замовлення 7059 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.25 грн |
| 152+ | 2.78 грн |
| 177+ | 2.39 грн |
| 198+ | 2.13 грн |
| 250+ | 1.79 грн |
| 500+ | 1.61 грн |
| 1000+ | 1.49 грн |
| 3000+ | 1.42 грн |
| 6000+ | 1.28 грн |
| PDTC143ET-QR |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
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В кошику
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| PDTC143ET,235 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30
Mounting: SMD
Kind of package: 11 inch reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30
Mounting: SMD
Kind of package: 11 inch reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
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В кошику
од. на суму грн.
| PDTC143EU-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
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В кошику
од. на суму грн.
| PMBT3904MB,315 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 590mW
Case: DFN1006B-3; SOT883B
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 590mW; DFN1006B-3,SOT883B
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 590mW
Case: DFN1006B-3; SOT883B
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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од. на суму грн.
| PMBT3904,235 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 300MHz
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| PMBT3904M,315 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 590mW; DFN1006-3,SOT883
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 590mW
Case: DFN1006-3; SOT883
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Collector current: 0.2A
Collector-emitter voltage: 40V
Current gain: 100...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 590mW; DFN1006-3,SOT883
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 590mW
Case: DFN1006-3; SOT883
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Collector current: 0.2A
Collector-emitter voltage: 40V
Current gain: 100...300
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| PMBT3904RAZ |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 480mW; DFN1412-6,SOT1268-1
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.48W
Case: DFN1412-6; SOT1268-1
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 480mW; DFN1412-6,SOT1268-1
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.48W
Case: DFN1412-6; SOT1268-1
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| BAT754C,215 |
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Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.6V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 6 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 69.82 грн |
| 74HC541PW,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Family: HC
Kind of package: reel; tape
Kind of output: 3-state
Number of channels: 8
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Family: HC
Kind of package: reel; tape
Kind of output: 3-state
Number of channels: 8
на замовлення 3934 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.74 грн |
| 24+ | 17.92 грн |
| 100+ | 16.07 грн |
| 500+ | 14.89 грн |
| 1000+ | 14.22 грн |
| 2500+ | 13.04 грн |
| HEF40106BT,653 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 3÷15VDC; reel,tape; HEF4000B
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...15V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 3÷15VDC; reel,tape; HEF4000B
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...15V DC
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: HEF4000B
на замовлення 4160 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.24 грн |
| 15+ | 28.60 грн |
| 100+ | 23.81 грн |
| 500+ | 19.09 грн |
| 1000+ | 14.30 грн |
| 2500+ | 12.87 грн |
| HEF40106BTT,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 6; CMOS; SMD; TTSOP14; 4.5÷15.5VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: TTSOP14
Supply voltage: 4.5...15.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 6; CMOS; SMD; TTSOP14; 4.5÷15.5VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: TTSOP14
Supply voltage: 4.5...15.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
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| BAV99-QR |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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| BUK7V4R2-40HX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 69.5A; Idm: 393A; 85W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Gate charge: 37nC
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 85W
Pulsed drain current: 393A
Drain current: 69.5A
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 69.5A; Idm: 393A; 85W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Gate charge: 37nC
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 85W
Pulsed drain current: 393A
Drain current: 69.5A
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Polarisation: unipolar
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| PSMN4R2-40VSHX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 69.5A; 85W
Mounting: SMD
Case: LFPAK56D; SOT1205
Kind of package: reel; tape
Gate charge: 37nC
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 85W
Pulsed drain current: 393A
Drain current: 69.5A
Technology: NextPowerS3
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 69.5A; 85W
Mounting: SMD
Case: LFPAK56D; SOT1205
Kind of package: reel; tape
Gate charge: 37nC
On-state resistance: 8.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 85W
Pulsed drain current: 393A
Drain current: 69.5A
Technology: NextPowerS3
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Polarisation: unipolar
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| BCP56T-QF |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.8W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.8W
Case: SC73; SOT223
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.8W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.8W
Case: SC73; SOT223
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Application: automotive industry
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| BZX384-C15,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOD323; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOD323
Max. load current: 0.25A
Semiconductor structure: single diode
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| PESD5V0S1UA,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; unidirectional; SOD323
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 4µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; unidirectional; SOD323
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 4µA
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| PESD5V0L5UY,115 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6; Ch: 5
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Peak pulse power dissipation: 25W
Number of channels: 5
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.2V; 2.5A; 25W; SC88,SOT363,TSSOP6; Ch: 5
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Leakage current: 25nA
Peak pulse power dissipation: 25W
Number of channels: 5
Application: automotive industry
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.93 грн |
| 32+ | 13.21 грн |
| 39+ | 11.02 грн |
| 100+ | 9.51 грн |
| 250+ | 8.75 грн |
| 500+ | 8.33 грн |
| 1000+ | 7.49 грн |
| 3000+ | 7.23 грн |
| PESD5V0L2BT,215 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.6V; 13A; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 7.6V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.35kW
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.6V; 13A; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 7.6V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 0.35kW
Number of channels: 2
Application: automotive industry
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| PESD5V0L5UV,115 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; SOT666; Ch: 3; ESD
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SOT666
Mounting: SMD
Leakage current: 25nA
Peak pulse power dissipation: 25W
Number of channels: 3
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; SOT666; Ch: 3; ESD
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 2.5A
Semiconductor structure: common anode; fivefold; unidirectional
Case: SOT666
Mounting: SMD
Leakage current: 25nA
Peak pulse power dissipation: 25W
Number of channels: 3
Application: universal
на замовлення 129 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.21 грн |
| 37+ | 11.61 грн |
| 45+ | 9.51 грн |
| 100+ | 8.83 грн |
| PESD5V0S1BA,115 |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 130W; 7.5V; 12A; bidirectional; SOD323
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 130W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 130W; 7.5V; 12A; bidirectional; SOD323
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 130W
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| PESD5V0U2BT,215 |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷9.5V; bidirectional; SOT23
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷9.5V; bidirectional; SOT23
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
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| PESD5V0U1UA,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; 1.3A; unidirectional; SOD323; 2.6pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Capacitance: 2.6pF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; 1.3A; unidirectional; SOD323; 2.6pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Capacitance: 2.6pF
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| PESD5V0L1UA,115 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; 3.5A; unidirectional; SOD323; 30pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Capacitance: 30pF
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8V; 3.5A; unidirectional; SOD323; 30pF
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.1µA
Capacitance: 30pF
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| PESD5V0S1BB,115 |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 130W; 7.5V; 12A; bidirectional; SOD523
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 130W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 130W; 7.5V; 12A; bidirectional; SOD523
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 130W
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| PESD5V0S2BT,215 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; 12A; 130W; bidirectional,double; SOT23
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 130W
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5V; 12A; 130W; bidirectional,double; SOT23
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional; double
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 130W
Number of channels: 2
Application: automotive industry
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| PESD5V0U1BA,115 |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷9.5V; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 0.1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷9.5V; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 0.1µA
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| PESD5V0S1BL,315 |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 130W; 5.5÷9.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 130W
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 130W; 5.5÷9.5V; bidirectional; DFN1006-2,SOD882
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 5.5...9.5V
Semiconductor structure: bidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 130W
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| PESD5V0C1BSFYL |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 10V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 10V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
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| PESD5V0S2UAT,215 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 260W; 6.4÷7.2V; 15A; unidirectional; SOT23
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 260W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 260W; 6.4÷7.2V; 15A; unidirectional; SOT23
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 260W
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| PESD5V0S2UQ,115 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 15A; 150W; SOT663; Ch: 2; ESD
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: common anode; double; unidirectional
Case: SOT663
Mounting: SMD
Leakage current: 0.3µA
Peak pulse power dissipation: 0.15kW
Number of channels: 2
Application: universal
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 15A; 150W; SOT663; Ch: 2; ESD
Type of diode: TVS array
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Max. forward impulse current: 15A
Semiconductor structure: common anode; double; unidirectional
Case: SOT663
Mounting: SMD
Leakage current: 0.3µA
Peak pulse power dissipation: 0.15kW
Number of channels: 2
Application: universal
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| PESD5V0L1UL,315 |
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Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 42W; 6.4÷7.2V; 3.5A; unidirectional
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 42W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 42W; 6.4÷7.2V; 3.5A; unidirectional
Type of diode: TVS
Version: ESD
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.2V
Max. forward impulse current: 3.5A
Semiconductor structure: unidirectional
Case: DFN1006-2; SOD882
Mounting: SMD
Leakage current: 0.1µA
Peak pulse power dissipation: 42W
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| PDTC143TT,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
на замовлення 107 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.34 грн |
| 85+ | 4.96 грн |
| 107+ | 4.21 грн |
| PDTC143XU,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
на замовлення 500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.96 грн |
| 65+ | 6.56 грн |
| 106+ | 4.00 грн |
| 159+ | 2.65 грн |
| 250+ | 1.99 грн |
| 500+ | 1.79 грн |
| PDTC143TU,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
на замовлення 71 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.68 грн |
| 53+ | 7.99 грн |
| 71+ | 5.89 грн |
| 74HC688D,653 |
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Виробник: NEXPERIA
Category: Comparators
Description: IC: digital; 8bit,comparator; CMOS; SMD; SO20-W; HC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; comparator
Mounting: SMD
Case: SO20-W
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Technology: CMOS
Category: Comparators
Description: IC: digital; 8bit,comparator; CMOS; SMD; SO20-W; HC; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; comparator
Mounting: SMD
Case: SO20-W
Family: HC
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 1149 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.39 грн |
| 15+ | 29.78 грн |
| 25+ | 26.83 грн |
| 50+ | 25.07 грн |
| 100+ | 23.72 грн |
| PMBT2907,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 300
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 200MHz
Application: automotive industry
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| BAV20,113 |
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Виробник: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel
Max. forward impulse current: 9A
Case: SOD27
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.4W
Leakage current: 0.1mA
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel
Max. forward impulse current: 9A
Case: SOD27
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.4W
Leakage current: 0.1mA
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| 74HC20PW,112 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; tube; HC
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: dual; 2
Mounting: SMD
Kind of package: tube
Family: HC
Kind of gate: NAND
Number of inputs: 4
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 2; IN: 4; CMOS; SMD; TSSOP14; tube; HC
Type of integrated circuit: digital
Case: TSSOP14
Number of channels: dual; 2
Mounting: SMD
Kind of package: tube
Family: HC
Kind of gate: NAND
Number of inputs: 4
Technology: CMOS
на замовлення 173 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.78 грн |
| 42+ | 10.09 грн |
| 46+ | 9.34 грн |
| 96+ | 8.92 грн |
| 74HCT08PW,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HCT
Delay time: 36ns
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HCT
Delay time: 36ns
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| 74HCT08BQ,115 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HCT
Delay time: 36ns
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HCT
Delay time: 36ns
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| 74HCU04D,653 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Technology: CMOS
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Family: HCU
Case: SO14
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Technology: CMOS
Number of channels: hex; 6
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Family: HCU
Case: SO14
на замовлення 2890 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.74 грн |
| 25+ | 17.24 грн |
| 100+ | 14.47 грн |
| 500+ | 13.04 грн |
| 1000+ | 12.03 грн |
| 2500+ | 11.44 грн |
| 74HCU04BQ,115 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; DHVQFN14; HCU
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 6
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 1
Supply voltage: 2...6V DC
Family: HCU
Case: DHVQFN14
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; DHVQFN14; HCU
Type of integrated circuit: digital
Technology: CMOS
Number of channels: 6
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 1
Supply voltage: 2...6V DC
Family: HCU
Case: DHVQFN14
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| PESD2V0Y1BSFYL |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 3.3V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 2V
Breakdown voltage: 3.3V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 3.3V; bidirectional; DSN0603-2,SOD962-2
Type of diode: TVS
Version: ESD
Max. off-state voltage: 2V
Breakdown voltage: 3.3V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
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| 74HC238D,653 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 160µA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 160µA
на замовлення 4781 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.84 грн |
| 29+ | 14.72 грн |
| 100+ | 13.29 грн |
| 500+ | 12.70 грн |
| 1000+ | 11.44 грн |
| 2500+ | 11.02 грн |
| 74HC238PW,118 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 3
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; IN: 3; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 3
на замовлення 387 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.42 грн |
| 18+ | 24.06 грн |
| 25+ | 20.69 грн |
| 74HC238BQ,115 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of inputs: 6
Mounting: SMD
Case: DHVQFN16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder,demultiplexer; Ch: 1; IN: 6; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder; demultiplexer
Number of inputs: 6
Mounting: SMD
Case: DHVQFN16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
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| 74LVC1T45GM-Q100X |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS
на замовлення 3065 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.93 грн |
| 28+ | 15.23 грн |
| 29+ | 14.64 грн |
| 100+ | 13.63 грн |
| 250+ | 12.95 грн |
| 500+ | 11.69 грн |
| 1000+ | 11.02 грн |
| 74LVC1T45GW-Q100H |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Mounting: SMD
Case: TSSOP6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Mounting: SMD
Case: TSSOP6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS
на замовлення 974 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.36 грн |
| 22+ | 20.02 грн |
| 25+ | 16.82 грн |
| 100+ | 15.14 грн |
| 250+ | 13.96 грн |
| 500+ | 13.29 грн |
| 74LVC1T45GM,115 |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 1bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; 3-state; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS; TTL
Category: Level translators
Description: IC: digital; 1bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; 3-state; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS; TTL
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| 74LVC1T45GM,132 |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Category: Level translators
Description: IC: digital; 1bit,bidirectional,transceiver,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; bidirectional; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
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| 74LVC1T45GN,132 |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 1bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; 3-state; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS; TTL
Category: Level translators
Description: IC: digital; 1bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; 3-state; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS; TTL
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| 74LVC1T45GS,132 |
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Виробник: NEXPERIA
Category: Level translators
Description: IC: digital; 1bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; 3-state; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS; TTL
Category: Level translators
Description: IC: digital; 1bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 1bit; 3-state; transceiver; translator
Mounting: SMD
Case: XSON6
Number of channels: 1
Kind of package: reel; tape
Kind of output: 3-state
Operating temperature: -40...125°C
Supply voltage: 1.2...5.5V DC
Family: LVC
Technology: CMOS; TTL
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| 74HCT574D,653 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS,TTL; SMD; SO20; HCT; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS,TTL; SMD; SO20; HCT; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
на замовлення 23 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.80 грн |
| 18+ | 23.55 грн |
| 20+ | 21.20 грн |
| PMV65XPEAR |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -120mA; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -120mA
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| PMV65XPER |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -12A
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; Idm: -12A; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -12A
Case: SOT23; TO236AB
On-state resistance: 114mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 36 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.89 грн |
| 23+ | 18.84 грн |
| PMV65XP,215 |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 833mW
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.8A; 833mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 833mW
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| PMV65XPVL |
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Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -1.8A; Idm: -16A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.8A
Pulsed drain current: -16A
Case: SOT23; TO236AB
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.























