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BCP54,115 BCP54,115 NEXPERIA BCP54_BCX54_BC54PA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.35W
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BCP54-16,115 BCP54-16,115 NEXPERIA BCP54_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.35W
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BCP54-16,135 BCP54-16,135 NEXPERIA BCP54_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.35W
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BCP54-16TF BCP54-16TF NEXPERIA BCP54T_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.8W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Power dissipation: 1.8W
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BCP54-QX NEXPERIA BCP54-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
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BCP54-16-QX NEXPERIA BCP54-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Power dissipation: 1.35W
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HEF4030BT,653 HEF4030BT,653 NEXPERIA HEF4030BT.pdf Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷15VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...15V DC
Kind of package: reel; tape
Family: HEF4000B
Quiescent current: 30µA
Operating temperature: -40...125°C
на замовлення 1378 шт:
термін постачання 14-30 дні (днів)
11+43.27 грн
14+31.98 грн
100+24.02 грн
Мінімальне замовлення: 11
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74AHC132D,118 74AHC132D,118 NEXPERIA 74AHC132D,118.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHC
Delay time: 19.5ns
на замовлення 1562 шт:
термін постачання 14-30 дні (днів)
25+18.03 грн
30+14.06 грн
34+12.39 грн
40+10.63 грн
100+9.46 грн
Мінімальне замовлення: 25
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74AHC132BQ,115 NEXPERIA 74AHC132BQ,115.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Delay time: 19.5ns
Quiescent current: 40µA
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Case: DHVQFN14
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74AHC132PW,118 74AHC132PW,118 NEXPERIA 74AHC132PW,118.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Delay time: 19.5ns
Quiescent current: 40µA
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Case: TSSOP14
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PBSS4630PA,115 NEXPERIA PBSS4630PA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 6A; DFN2020-3,SOT1061
Case: DFN2020-3; SOT1061
Collector current: 6A
Collector-emitter voltage: 30V
Current gain: 180...450
Frequency: 115MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
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PMEG2010ER,115 PMEG2010ER,115 NEXPERIA PMEG2010ER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.34V
Max. load current: 7A
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
на замовлення 1978 шт:
термін постачання 14-30 дні (днів)
36+12.62 грн
41+10.30 грн
44+9.63 грн
100+7.45 грн
250+6.70 грн
500+6.28 грн
1000+5.94 грн
Мінімальне замовлення: 36
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PMEG2010EH,115 PMEG2010EH,115 NEXPERIA PMEG2010EH.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 80pF
Max. forward impulse current: 9A
Max. load current: 7A
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PMEG2010EJ,115 PMEG2010EJ,115 NEXPERIA PMEG2010EJ.pdf PMEG2010EH_EJ_ET.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 78 шт:
термін постачання 14-30 дні (днів)
36+12.62 грн
43+9.88 грн
48+8.87 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
74AHC08PW,118 74AHC08PW,118 NEXPERIA 74AHC08PW,118.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: TSSOP14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 15.5ns
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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74AHC08BQ,115 NEXPERIA 74AHC08BQ,115.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: DHVQFN14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 15.5ns
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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74AHC08D,118 74AHC08D,118 NEXPERIA 74AHC08D,118.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: SO14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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74VHC08BQ,115 NEXPERIA 74VHC08BQ,115.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: DHVQFN14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
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74VHC08D,118 NEXPERIA 74VHC08D,118.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: SO14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
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74VHC08PW,118 NEXPERIA 74VHC_VHCT08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Family: VHC
Technology: CMOS
Case: TSSOP14
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74HC151PW,118 74HC151PW,118 NEXPERIA 74HC151PW,118.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer; Ch: 8; IN: 8; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; multiplexer
Number of inputs: 8
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Technology: CMOS
Number of channels: 8
Kind of package: reel; tape
на замовлення 1920 шт:
термін постачання 14-30 дні (днів)
18+25.24 грн
27+15.99 грн
30+14.40 грн
100+12.64 грн
250+12.05 грн
500+11.64 грн
Мінімальне замовлення: 18
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74HC05D,118 74HC05D,118 NEXPERIA 74HC05D,118.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
Technology: CMOS
Kind of output: open drain
Delay time: 135ns
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PSMN057-200P,127 PSMN057-200P,127 NEXPERIA PSMN057-200P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 548 шт:
термін постачання 14-30 дні (днів)
3+174.95 грн
10+172.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN057-200B,118 NEXPERIA PSMN057-200B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 27.5A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 250W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhancement
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MJD44H11J NEXPERIA MJD44H11.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK; TO252
Current gain: 40...60
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
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BUK7Y8R7-60EX BUK7Y8R7-60EX NEXPERIA BUK7Y8R7-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 46nC
On-state resistance: 19.5mΩ
Power dissipation: 147W
Drain current: 61A
Drain-source voltage: 60V
Pulsed drain current: 347A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
3+167.67 грн
10+125.56 грн
25+98.77 грн
Мінімальне замовлення: 3
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BUK7Y7R0-40HX BUK7Y7R0-40HX NEXPERIA BUK7Y7R0-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 26nC
On-state resistance: 13.6mΩ
Power dissipation: 64W
Gate-source voltage: ±20V
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 272A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
на замовлення 1362 шт:
термін постачання 14-30 дні (днів)
7+72.12 грн
10+53.57 грн
25+47.71 грн
100+40.18 грн
250+35.99 грн
500+33.48 грн
1000+31.81 грн
Мінімальне замовлення: 7
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BUK7M6R3-40EX BUK7M6R3-40EX NEXPERIA BUK7M6R3-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.1nC
On-state resistance: 12.5mΩ
Drain current: 56.4A
Power dissipation: 79W
Pulsed drain current: 319A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK33; SOT1210
на замовлення 1491 шт:
термін постачання 14-30 дні (днів)
6+82.03 грн
10+57.76 грн
25+51.90 грн
100+47.71 грн
250+46.04 грн
500+41.02 грн
1000+40.18 грн
Мінімальне замовлення: 6
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BUK7M33-60EX BUK7M33-60EX NEXPERIA BUK7M33-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 98A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK78150-55A/CUX BUK78150-55A/CUX NEXPERIA BUK78150-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 278mΩ
Drain current: 3.8A
Power dissipation: 8W
Pulsed drain current: 22A
Drain-source voltage: 55V
Application: automotive industry
Case: SC73; SOT223
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BUK7Y72-80EX BUK7Y72-80EX NEXPERIA BUK7Y72-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.8nC
On-state resistance: 181mΩ
Drain current: 11A
Power dissipation: 45W
Pulsed drain current: 63A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK763R8-80E,118 BUK763R8-80E,118 NEXPERIA BUK763R8-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 169nC
On-state resistance: 9.2mΩ
Drain current: 120A
Power dissipation: 349W
Gate-source voltage: ±20V
Pulsed drain current: 778A
Drain-source voltage: 80V
Application: automotive industry
Case: D2PAK; SOT404
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BUK7K6R2-40EX NEXPERIA BUK7K6R2-40E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 308A; 68W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 32.3nC
On-state resistance: 5.8mΩ
Drain current: 40A
Power dissipation: 68W
Gate-source voltage: ±20V
Pulsed drain current: 308A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56D; SOT1205
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BUK768R1-100E,118 NEXPERIA BUK768R1-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 108nC
On-state resistance: 21.9mΩ
Drain current: 78A
Power dissipation: 263W
Gate-source voltage: ±20V
Pulsed drain current: 439A
Drain-source voltage: 100V
Application: automotive industry
Case: D2PAK; SOT404
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BUK7K8R7-40EX NEXPERIA BUK7K8R7-40E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21.8nC
On-state resistance: 8.5mΩ
Drain current: 30A
Power dissipation: 53W
Gate-source voltage: ±20V
Pulsed drain current: 22.5A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56D; SOT1205
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BUK7K52-60EX NEXPERIA BUK7K52-60E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.2nC
On-state resistance: 101mΩ
Drain current: 12.6A
Power dissipation: 32W
Gate-source voltage: ±20V
Pulsed drain current: 71A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7880-55A/CUX NEXPERIA BUK7880-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 148mΩ
Drain current: 5A
Power dissipation: 8W
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 55V
Application: automotive industry
Case: SC73; SOT223
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BUK7K15-80EX NEXPERIA BUK7K15-80E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 35.1nC
On-state resistance: 38mΩ
Drain current: 16A
Power dissipation: 68W
Pulsed drain current: 92A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56D; SOT1205
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BUK7K18-40EX NEXPERIA BUK7K18-40E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 22A; Idm: 127A; 38W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11.8nC
On-state resistance: 37.4mΩ
Drain current: 22A
Power dissipation: 38W
Gate-source voltage: ±20V
Pulsed drain current: 127A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7K32-100EX NEXPERIA BUK7K32-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 76mΩ
Drain current: 20.4A
Power dissipation: 64W
Gate-source voltage: ±20V
Pulsed drain current: 116A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7D36-60EX NEXPERIA BUK7D36-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 76mΩ
Drain current: 8.9A
Power dissipation: 15W
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 60V
Application: automotive industry
Case: DFN6; SOT1220
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BUK7613-60E,118 NEXPERIA BUK7613-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.9nC
On-state resistance: 28.2mΩ
Drain current: 41A
Power dissipation: 96W
Gate-source voltage: ±20V
Pulsed drain current: 234A
Drain-source voltage: 60V
Application: automotive industry
Case: D2PAK; SOT404
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BUK7D25-40EX NEXPERIA BUK7D25-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: Trench
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 46mΩ
Drain current: 12A
Power dissipation: 15W
Pulsed drain current: 76A
Drain-source voltage: 40V
Application: automotive industry
Case: DFN2020MD-6; SOT1220
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BUK7M27-80EX NEXPERIA BUK7M27-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 68mΩ
Drain current: 21.3A
Power dissipation: 62W
Gate-source voltage: ±20V
Pulsed drain current: 121A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7M42-60EX NEXPERIA BUK7M42-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 94mΩ
Drain current: 14A
Power dissipation: 36W
Gate-source voltage: ±20V
Pulsed drain current: 78A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7Y3R5-40E,115 NEXPERIA BUK7Y3R5-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 49.4nC
On-state resistance: 3.5mΩ
Drain current: 100A
Power dissipation: 167W
Gate-source voltage: ±20V
Pulsed drain current: 622A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y9R9-80EX NEXPERIA BUK7Y9R9-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 51.6nC
On-state resistance: 24.9mΩ
Drain current: 63A
Power dissipation: 195W
Gate-source voltage: ±20V
Pulsed drain current: 354A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y41-80EX NEXPERIA BUK7Y41-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.4nC
On-state resistance: 103mΩ
Drain current: 18A
Power dissipation: 64W
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y53-100B,115 NEXPERIA BUK7Y53-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 22nC
On-state resistance: 138mΩ
Drain current: 17.6A
Power dissipation: 85W
Gate-source voltage: ±20V
Pulsed drain current: 99A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y65-100EX NEXPERIA BUK7Y65-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.8nC
On-state resistance: 0.18Ω
Drain current: 13.4A
Power dissipation: 64W
Pulsed drain current: 76A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK753R1-40E,127 NEXPERIA BUK753R1-40E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 5.9mΩ
Drain current: 100A
Power dissipation: 234W
Gate-source voltage: ±20V
Pulsed drain current: 798A
Drain-source voltage: 40V
Application: automotive industry
Case: SOT78; TO220AB
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BUK766R0-60E,118 NEXPERIA BUK766R0-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 62nC
On-state resistance: 13mΩ
Drain current: 75A
Power dissipation: 182W
Gate-source voltage: ±20V
Pulsed drain current: 473A
Drain-source voltage: 60V
Application: automotive industry
Case: D2PAK; SOT404
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BUK7Y102-100B,115 NEXPERIA BUK7Y102-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.2nC
On-state resistance: 265mΩ
Drain current: 10.6A
Power dissipation: 60W
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y13-40B,115 NEXPERIA BUK7Y13-40B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; Idm: 234A; 85W
Type of transistor: N-MOSFET
Power dissipation: 85W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Application: automotive industry
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 234A
Drain-source voltage: 40V
Drain current: 58A
On-state resistance: 13mΩ
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BUK7Y15-100EX NEXPERIA BUK7Y15-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 54.5nC
On-state resistance: 41.5mΩ
Drain current: 48A
Power dissipation: 195W
Gate-source voltage: ±20V
Pulsed drain current: 274A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y15-60EX NEXPERIA BUK7Y15-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 94W
Type of transistor: N-MOSFET
Power dissipation: 94W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Gate charge: 25.4nC
Kind of package: reel; tape
Application: automotive industry
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 212A
Drain-source voltage: 60V
Drain current: 53A
On-state resistance: 15mΩ
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BUK7Y153-100EX NEXPERIA BUK7Y153-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.4nC
On-state resistance: 424mΩ
Drain current: 6.7A
Power dissipation: 37.3W
Gate-source voltage: ±20V
Pulsed drain current: 37.5A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y7R2-60EX NEXPERIA BUK7Y7R2-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 407A; 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.8nC
On-state resistance: 16.1mΩ
Drain current: 72A
Power dissipation: 167W
Gate-source voltage: ±20V
Pulsed drain current: 407A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BZV55-B3V6,115 BZV55-B3V6,115 NEXPERIA BZV55_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD80C
Kind of package: reel; tape
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
на замовлення 390 шт:
термін постачання 14-30 дні (днів)
50+9.01 грн
63+6.70 грн
71+5.94 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZV55-C8V2,115 BZV55-C8V2,115 NEXPERIA BZV55-C10.115.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
на замовлення 7375 шт:
термін постачання 14-30 дні (днів)
63+7.21 грн
80+5.27 грн
120+3.52 грн
Мінімальне замовлення: 63
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BCP54,115 BCP54_BCX54_BC54PA.pdf
BCP54,115
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.35W
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BCP54-16,115 BCP54_SER.pdf
BCP54-16,115
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.35W
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BCP54-16,135 BCP54_SER.pdf
BCP54-16,135
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.35W
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BCP54-16TF BCP54T_SER.pdf
BCP54-16TF
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.8W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Power dissipation: 1.8W
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BCP54-QX BCP54-Q_SER.pdf
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
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BCP54-16-QX BCP54-Q_SER.pdf
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Power dissipation: 1.35W
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HEF4030BT,653 HEF4030BT.pdf
HEF4030BT,653
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷15VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...15V DC
Kind of package: reel; tape
Family: HEF4000B
Quiescent current: 30µA
Operating temperature: -40...125°C
на замовлення 1378 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
11+43.27 грн
14+31.98 грн
100+24.02 грн
Мінімальне замовлення: 11
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74AHC132D,118 74AHC132D,118.pdf
74AHC132D,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHC
Delay time: 19.5ns
на замовлення 1562 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
25+18.03 грн
30+14.06 грн
34+12.39 грн
40+10.63 грн
100+9.46 грн
Мінімальне замовлення: 25
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74AHC132BQ,115 74AHC132BQ,115.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Delay time: 19.5ns
Quiescent current: 40µA
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Case: DHVQFN14
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74AHC132PW,118 74AHC132PW,118.pdf
74AHC132PW,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Technology: CMOS
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...125°C
Delay time: 19.5ns
Quiescent current: 40µA
Number of inputs: 2
Family: AHC
Supply voltage: 2...5.5V DC
Case: TSSOP14
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PBSS4630PA,115 PBSS4630PA.pdf
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 6A; DFN2020-3,SOT1061
Case: DFN2020-3; SOT1061
Collector current: 6A
Collector-emitter voltage: 30V
Current gain: 180...450
Frequency: 115MHz
Polarisation: bipolar
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
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PMEG2010ER,115 PMEG2010ER.pdf
PMEG2010ER,115
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.34V
Max. load current: 7A
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
на замовлення 1978 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.62 грн
41+10.30 грн
44+9.63 грн
100+7.45 грн
250+6.70 грн
500+6.28 грн
1000+5.94 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
PMEG2010EH,115 PMEG2010EH.pdf
PMEG2010EH,115
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 80pF
Max. forward impulse current: 9A
Max. load current: 7A
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PMEG2010EJ,115 PMEG2010EJ.pdf PMEG2010EH_EJ_ET.pdf
PMEG2010EJ,115
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.5V
Kind of package: reel; tape
на замовлення 78 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.62 грн
43+9.88 грн
48+8.87 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
74AHC08PW,118 74AHC08PW,118.pdf
74AHC08PW,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: TSSOP14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 15.5ns
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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74AHC08BQ,115 74AHC08BQ,115.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: DHVQFN14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Delay time: 15.5ns
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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74AHC08D,118 74AHC08D,118.pdf
74AHC08D,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: SO14
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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74VHC08BQ,115 74VHC08BQ,115.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: DHVQFN14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
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74VHC08D,118 74VHC08D,118.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: SO14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
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74VHC08PW,118 74VHC_VHCT08.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 4
Number of inputs: 2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Family: VHC
Technology: CMOS
Case: TSSOP14
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74HC151PW,118 74HC151PW,118.pdf
74HC151PW,118
Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer; Ch: 8; IN: 8; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; multiplexer
Number of inputs: 8
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Technology: CMOS
Number of channels: 8
Kind of package: reel; tape
на замовлення 1920 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.24 грн
27+15.99 грн
30+14.40 грн
100+12.64 грн
250+12.05 грн
500+11.64 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
74HC05D,118 74HC05D,118.pdf
74HC05D,118
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
Technology: CMOS
Kind of output: open drain
Delay time: 135ns
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PSMN057-200P,127 PSMN057-200P.pdf
PSMN057-200P,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 548 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+174.95 грн
10+172.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PSMN057-200B,118 PSMN057-200B.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 27.5A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 27.5A
Pulsed drain current: 156A
Power dissipation: 250W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: reel; tape
Kind of channel: enhancement
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MJD44H11J MJD44H11.pdf
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK; TO252
Current gain: 40...60
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
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BUK7Y8R7-60EX BUK7Y8R7-60E.pdf
BUK7Y8R7-60EX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 46nC
On-state resistance: 19.5mΩ
Power dissipation: 147W
Drain current: 61A
Drain-source voltage: 60V
Pulsed drain current: 347A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+167.67 грн
10+125.56 грн
25+98.77 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BUK7Y7R0-40HX BUK7Y7R0-40H.pdf
BUK7Y7R0-40HX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 26nC
On-state resistance: 13.6mΩ
Power dissipation: 64W
Gate-source voltage: ±20V
Drain current: 48A
Drain-source voltage: 40V
Pulsed drain current: 272A
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
на замовлення 1362 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+72.12 грн
10+53.57 грн
25+47.71 грн
100+40.18 грн
250+35.99 грн
500+33.48 грн
1000+31.81 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BUK7M6R3-40EX BUK7M6R3-40E.pdf
BUK7M6R3-40EX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 28.1nC
On-state resistance: 12.5mΩ
Drain current: 56.4A
Power dissipation: 79W
Pulsed drain current: 319A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK33; SOT1210
на замовлення 1491 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+82.03 грн
10+57.76 грн
25+51.90 грн
100+47.71 грн
250+46.04 грн
500+41.02 грн
1000+40.18 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK7M33-60EX BUK7M33-60E.pdf
BUK7M33-60EX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 98A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 74mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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BUK78150-55A/CUX BUK78150-55A.pdf
BUK78150-55A/CUX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 278mΩ
Drain current: 3.8A
Power dissipation: 8W
Pulsed drain current: 22A
Drain-source voltage: 55V
Application: automotive industry
Case: SC73; SOT223
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BUK7Y72-80EX BUK7Y72-80E.pdf
BUK7Y72-80EX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 11A; Idm: 63A; 45W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.8nC
On-state resistance: 181mΩ
Drain current: 11A
Power dissipation: 45W
Pulsed drain current: 63A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK763R8-80E,118 BUK763R8-80E.pdf
BUK763R8-80E,118
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 169nC
On-state resistance: 9.2mΩ
Drain current: 120A
Power dissipation: 349W
Gate-source voltage: ±20V
Pulsed drain current: 778A
Drain-source voltage: 80V
Application: automotive industry
Case: D2PAK; SOT404
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BUK7K6R2-40EX BUK7K6R2-40E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 308A; 68W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 32.3nC
On-state resistance: 5.8mΩ
Drain current: 40A
Power dissipation: 68W
Gate-source voltage: ±20V
Pulsed drain current: 308A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56D; SOT1205
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BUK768R1-100E,118 BUK768R1-100E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; Idm: 439A; 263W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 108nC
On-state resistance: 21.9mΩ
Drain current: 78A
Power dissipation: 263W
Gate-source voltage: ±20V
Pulsed drain current: 439A
Drain-source voltage: 100V
Application: automotive industry
Case: D2PAK; SOT404
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BUK7K8R7-40EX BUK7K8R7-40E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21.8nC
On-state resistance: 8.5mΩ
Drain current: 30A
Power dissipation: 53W
Gate-source voltage: ±20V
Pulsed drain current: 22.5A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56D; SOT1205
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BUK7K52-60EX BUK7K52-60E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.2nC
On-state resistance: 101mΩ
Drain current: 12.6A
Power dissipation: 32W
Gate-source voltage: ±20V
Pulsed drain current: 71A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7880-55A/CUX BUK7880-55A.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 148mΩ
Drain current: 5A
Power dissipation: 8W
Gate-source voltage: ±20V
Pulsed drain current: 30A
Drain-source voltage: 55V
Application: automotive industry
Case: SC73; SOT223
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BUK7K15-80EX BUK7K15-80E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 35.1nC
On-state resistance: 38mΩ
Drain current: 16A
Power dissipation: 68W
Pulsed drain current: 92A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56D; SOT1205
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BUK7K18-40EX BUK7K18-40E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 22A; Idm: 127A; 38W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11.8nC
On-state resistance: 37.4mΩ
Drain current: 22A
Power dissipation: 38W
Gate-source voltage: ±20V
Pulsed drain current: 127A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7K32-100EX BUK7K32-100E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 34nC
On-state resistance: 76mΩ
Drain current: 20.4A
Power dissipation: 64W
Gate-source voltage: ±20V
Pulsed drain current: 116A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7D36-60EX BUK7D36-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 14nC
On-state resistance: 76mΩ
Drain current: 8.9A
Power dissipation: 15W
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 60V
Application: automotive industry
Case: DFN6; SOT1220
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BUK7613-60E,118 BUK7613-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 22.9nC
On-state resistance: 28.2mΩ
Drain current: 41A
Power dissipation: 96W
Gate-source voltage: ±20V
Pulsed drain current: 234A
Drain-source voltage: 60V
Application: automotive industry
Case: D2PAK; SOT404
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BUK7D25-40EX BUK7D25-40E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: Trench
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 46mΩ
Drain current: 12A
Power dissipation: 15W
Pulsed drain current: 76A
Drain-source voltage: 40V
Application: automotive industry
Case: DFN2020MD-6; SOT1220
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BUK7M27-80EX BUK7M27-80E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 68mΩ
Drain current: 21.3A
Power dissipation: 62W
Gate-source voltage: ±20V
Pulsed drain current: 121A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7M42-60EX BUK7M42-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 78A; 36W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 94mΩ
Drain current: 14A
Power dissipation: 36W
Gate-source voltage: ±20V
Pulsed drain current: 78A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK33; SOT1210
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BUK7Y3R5-40E,115 BUK7Y3R5-40E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 49.4nC
On-state resistance: 3.5mΩ
Drain current: 100A
Power dissipation: 167W
Gate-source voltage: ±20V
Pulsed drain current: 622A
Drain-source voltage: 40V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y9R9-80EX BUK7Y9R9-80E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 51.6nC
On-state resistance: 24.9mΩ
Drain current: 63A
Power dissipation: 195W
Gate-source voltage: ±20V
Pulsed drain current: 354A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y41-80EX BUK7Y41-80E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 18A; Idm: 100A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.4nC
On-state resistance: 103mΩ
Drain current: 18A
Power dissipation: 64W
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 80V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y53-100B,115 BUK7Y53-100B.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 22nC
On-state resistance: 138mΩ
Drain current: 17.6A
Power dissipation: 85W
Gate-source voltage: ±20V
Pulsed drain current: 99A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y65-100EX BUK7Y65-100E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13.4A; Idm: 76A; 64W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.8nC
On-state resistance: 0.18Ω
Drain current: 13.4A
Power dissipation: 64W
Pulsed drain current: 76A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK753R1-40E,127 BUK753R1-40E.pdf
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 79nC
On-state resistance: 5.9mΩ
Drain current: 100A
Power dissipation: 234W
Gate-source voltage: ±20V
Pulsed drain current: 798A
Drain-source voltage: 40V
Application: automotive industry
Case: SOT78; TO220AB
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BUK766R0-60E,118 BUK766R0-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 62nC
On-state resistance: 13mΩ
Drain current: 75A
Power dissipation: 182W
Gate-source voltage: ±20V
Pulsed drain current: 473A
Drain-source voltage: 60V
Application: automotive industry
Case: D2PAK; SOT404
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BUK7Y102-100B,115 BUK7Y102-100B.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.6A; Idm: 60A; 60W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.2nC
On-state resistance: 265mΩ
Drain current: 10.6A
Power dissipation: 60W
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y13-40B,115 BUK7Y13-40B.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58A; Idm: 234A; 85W
Type of transistor: N-MOSFET
Power dissipation: 85W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Application: automotive industry
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 234A
Drain-source voltage: 40V
Drain current: 58A
On-state resistance: 13mΩ
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BUK7Y15-100EX BUK7Y15-100E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; Idm: 274A; 195W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 54.5nC
On-state resistance: 41.5mΩ
Drain current: 48A
Power dissipation: 195W
Gate-source voltage: ±20V
Pulsed drain current: 274A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y15-60EX BUK7Y15-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 94W
Type of transistor: N-MOSFET
Power dissipation: 94W
Case: LFPAK56; PowerSO8; SOT669
Mounting: SMD
Gate charge: 25.4nC
Kind of package: reel; tape
Application: automotive industry
Kind of channel: enhancement
Polarisation: unipolar
Pulsed drain current: 212A
Drain-source voltage: 60V
Drain current: 53A
On-state resistance: 15mΩ
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BUK7Y153-100EX BUK7Y153-100E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9.4nC
On-state resistance: 424mΩ
Drain current: 6.7A
Power dissipation: 37.3W
Gate-source voltage: ±20V
Pulsed drain current: 37.5A
Drain-source voltage: 100V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BUK7Y7R2-60EX BUK7Y7R2-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 407A; 167W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 50.8nC
On-state resistance: 16.1mΩ
Drain current: 72A
Power dissipation: 167W
Gate-source voltage: ±20V
Pulsed drain current: 407A
Drain-source voltage: 60V
Application: automotive industry
Case: LFPAK56; PowerSO8; SOT669
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BZV55-B3V6,115 BZV55_SER.pdf
BZV55-B3V6,115
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD80C
Kind of package: reel; tape
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
на замовлення 390 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.01 грн
63+6.70 грн
71+5.94 грн
Мінімальне замовлення: 50
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BZV55-C8V2,115 BZV55-C10.115.pdf
BZV55-C8V2,115
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
на замовлення 7375 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.21 грн
80+5.27 грн
120+3.52 грн
Мінімальне замовлення: 63
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