| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PSMN1R0-30YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 272W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.15mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 70nC |
на замовлення 251 шт: термін постачання 14-30 дні (днів) |
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PSMN4R0-30YLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 95A Pulsed drain current: 378A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: SMD Gate charge: 9.1nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1668 шт: термін постачання 14-30 дні (днів) |
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PSMN7R5-60YLX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 61A Pulsed drain current: 346A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 19.7mΩ Mounting: SMD Gate charge: 60.6nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 1206 шт: термін постачання 14-30 дні (днів) |
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PSMN013-30MLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 157A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1559 шт: термін постачання 14-30 дні (днів) |
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PSMN1R7-60BS,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 137nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 369 шт: термін постачання 14-30 дні (днів) |
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PSMN8R5-60YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 76A Pulsed drain current: 303A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1340 шт: термін постачання 14-30 дні (днів) |
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PSMN3R5-30YL,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 447A Power dissipation: 74W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.37mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1057 шт: термін постачання 14-30 дні (днів) |
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PSMN017-60YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 44A Power dissipation: 74W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 36.1mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1043 шт: термін постачання 14-30 дні (днів) |
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PSMN015-60BS,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 201A Power dissipation: 86W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 20.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 603 шт: термін постачання 14-30 дні (днів) |
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PSMN013-60YLX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 53A Pulsed drain current: 212A Power dissipation: 95W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 12.1mΩ Mounting: SMD Gate charge: 33.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 53 шт: термін постачання 14-30 дні (днів) |
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PSMN0R9-25YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 272W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.125mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1037 шт: термін постачання 14-30 дні (днів) |
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PSMN013-30YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 26W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1733 шт: термін постачання 14-30 дні (днів) |
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PSMN0R9-30YLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 284A Pulsed drain current: 1.8kA Power dissipation: 291W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 1.44mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 1331 шт: термін постачання 14-30 дні (днів) |
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PSMN030-60YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 29A Pulsed drain current: 116A Power dissipation: 56W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 49.6mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1471 шт: термін постачання 14-30 дні (днів) |
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PSMN1R2-25YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Pulsed drain current: 1133A Power dissipation: 179W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1391 шт: термін постачання 14-30 дні (днів) |
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PSMN2R2-30YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W Type of transistor: N-MOSFET Mounting: SMD Drain current: 100A Drain-source voltage: 30V Gate charge: 55nC On-state resistance: 4.6mΩ Power dissipation: 141W Gate-source voltage: ±20V Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Case: LFPAK56; PowerSO8; SOT669 |
на замовлення 22 шт: термін постачання 14-30 дні (днів) |
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PSMN038-100YLX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21.3A Pulsed drain current: 120A Power dissipation: 94.9W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 103.5mΩ Mounting: SMD Gate charge: 39.2nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 589 шт: термін постачання 14-30 дні (днів) |
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PSMN4R6-60BS,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 565A Power dissipation: 211W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 70.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 691 шт: термін постачання 14-30 дні (днів) |
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PSMN2R0-30YLE,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 1015A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1317 шт: термін постачання 14-30 дні (днів) |
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PSMN3R0-60PS,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 824A Power dissipation: 306W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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PSMN3R9-60PSQ | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Pulsed drain current: 705A Power dissipation: 263W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.94mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement |
на замовлення 66 шт: термін постачання 14-30 дні (днів) |
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PSMN2R0-30PL,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 117nC |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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PSMN7R0-30YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 245A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1390 шт: термін постачання 14-30 дні (днів) |
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PSMN012-100YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 35.8mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1369 шт: термін постачання 14-30 дні (днів) |
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PSMN017-30PL,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Pulsed drain current: 152A Power dissipation: 45W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 5.1nC Kind of package: tube Kind of channel: enhancement |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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PSMN8R0-40PS,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 309A Power dissipation: 86W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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PSMN1R1-30PL,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Pulsed drain current: 1609A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: THT Gate charge: 243nC Kind of package: tube Kind of channel: enhancement |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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PSMN7R0-60YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 63A Power dissipation: 117W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 14.7mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1422 шт: термін постачання 14-30 дні (днів) |
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PSMN009-100P,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 65A Pulsed drain current: 400A Power dissipation: 230W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 23.8mΩ Mounting: THT Gate charge: 156nC Kind of package: tube Kind of channel: enhancement |
на замовлення 781 шт: термін постачання 14-30 дні (днів) |
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| PSMN1R8-80SSFJ | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 222nC On-state resistance: 4.1mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Power dissipation: 341W Drain current: 205A Pulsed drain current: 1158A Case: LFPAK88; SOT1235 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| PSMN1R2-25YLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A Mounting: SMD Technology: NextPowerS3 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 60.3nC On-state resistance: 2.87mΩ Gate-source voltage: ±20V Drain-source voltage: 25V Power dissipation: 172W Drain current: 205A Pulsed drain current: 1163A Case: LFPAK56; PowerSO8; SOT669 Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74LV4060PW,112 | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C Family: LV Technology: TTL Type of integrated circuit: digital Mounting: SMD Kind of package: tube Case: TSSOP16 Operating temperature: -40...125°C Supply voltage: 1...5.5V DC Kind of integrated circuit: 14bit; binary counter |
на замовлення 232 шт: термін постачання 14-30 дні (днів) |
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74LV4060DB,112 | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C Family: LV Technology: TTL Type of integrated circuit: digital Mounting: SMD Kind of package: tube Case: SSOP16 Operating temperature: -40...125°C Supply voltage: 1...5.5V DC Kind of integrated circuit: 14bit; binary counter |
на замовлення 141 шт: термін постачання 14-30 дні (днів) |
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| HEF4541BT-Q100J | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 16-stage,binary counter; SO14; -40÷85°C; 3÷15VDC Type of integrated circuit: digital Case: SO14 Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 3...15V DC Kind of integrated circuit: 16-stage; binary counter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| HEF4541BT,118 | NEXPERIA |
Category: Counters/dividersDescription: IC: digital; 16-stage,binary counter; CMOS; SMD; SO14; HEF4000B Type of integrated circuit: digital Family: HEF4000B Technology: CMOS Case: SO14 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3...15V DC Kind of integrated circuit: 16-stage; binary counter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PUMH17,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N4531,113 | NEXPERIA |
Category: THT universal diodesDescription: Diode: switching; THT; 75V; 200mA; reel; Ifsm: 1A; DO34; Ufmax: 1V Type of diode: switching Power dissipation: 0.5W Kind of package: reel Case: DO34 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 75V Features of semiconductor devices: fast switching Reverse recovery time: 4ns Load current: 0.2A Max. load current: 0.45A Max. forward impulse current: 1A Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4531,133 | NEXPERIA |
Category: THT universal diodesDescription: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW Type of diode: switching Power dissipation: 0.5W Kind of package: Ammo Pack Case: DO34 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 75V Features of semiconductor devices: fast switching Reverse recovery time: 4ns Load current: 0.2A Max. load current: 0.45A Max. forward impulse current: 1A Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 1N4531,143 | NEXPERIA |
Category: THT universal diodesDescription: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW Type of diode: switching Power dissipation: 0.5W Kind of package: Ammo Pack Case: DO34 Mounting: THT Semiconductor structure: single diode Max. off-state voltage: 75V Features of semiconductor devices: fast switching Reverse recovery time: 4ns Load current: 0.2A Max. load current: 0.45A Max. forward impulse current: 1A Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PEMH11,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PEMH11,315 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SOT666 Current gain: 80 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PUMH13,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 19599 шт: термін постачання 14-30 дні (днів) |
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PUMH10,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ Polarisation: bipolar Kind of transistor: BRT Mounting: SMD Type of transistor: NPN x2 Kind of package: reel; tape Case: SC88; SOT363; TSSOP6 Collector current: 0.1A Power dissipation: 0.3W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 230MHz |
на замовлення 4994 шт: термін постачання 14-30 дні (днів) |
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PUMH1,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
на замовлення 19318 шт: термін постачання 14-30 дні (днів) |
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PUMH15,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
на замовлення 460 шт: термін постачання 14-30 дні (днів) |
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PUMH18,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ |
на замовлення 615 шт: термін постачання 14-30 дні (днів) |
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PUMH19,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 22kΩ |
на замовлення 5533 шт: термін постачання 14-30 дні (днів) |
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PUMH10-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ Current gain: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PUMH1-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| PUMH10,125 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
PUMH10Z | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PUMH15-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 4.7kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PUMH16,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Mounting: SMD Kind of package: reel; tape Frequency: 230MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PMST5551,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.3A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 250 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
на замовлення 2502 шт: термін постачання 14-30 дні (днів) |
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BZX84-C68,215 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 68V; SMD; reel,tape; SOT23; Ifmax: 200mA Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Case: SOT23 Type of diode: Zener Max. load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 0.9V Tolerance: ±5% Zener voltage: 68V |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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BAS16H,115 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
74HCT4046AD,118 | NEXPERIA |
Category: Other logic integrated circuitsDescription: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16 Type of integrated circuit: digital Case: SO16 Mounting: SMD Operating temperature: -40...125°C Supply voltage: 4.5...5.5V DC Technology: CMOS; TTL Family: HCT Kind of package: reel; tape Kind of integrated circuit: phase-locked loop |
на замовлення 409 шт: термін постачання 14-30 дні (днів) |
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BCW72,215 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 100MHz |
на замовлення 2455 шт: термін постачання 14-30 дні (днів) |
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| 74LV04BQ,115 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; TTL; SMD; VFQFN14; 1÷5.5VDC; -40÷125°C; LV Type of integrated circuit: digital Number of channels: hex; 6 Technology: TTL Mounting: SMD Case: VFQFN14 Operating temperature: -40...125°C Family: LV Kind of package: reel; tape Supply voltage: 1...5.5V DC Kind of gate: NOT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
74LV04D,118 | NEXPERIA |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; TTL; SMD; SO14; 1÷5.5VDC; -40÷125°C; LV Type of integrated circuit: digital Number of channels: hex; 6 Technology: TTL Mounting: SMD Case: SO14 Operating temperature: -40...125°C Family: LV Kind of package: reel; tape Supply voltage: 1...5.5V DC Kind of gate: NOT |
товару немає в наявності |
В кошику од. на суму грн. |
| PSMN1R0-30YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 70nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 70nC
на замовлення 251 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 146.94 грн |
| 10+ | 113.84 грн |
| 25+ | 102.96 грн |
| 100+ | 95.43 грн |
| 250+ | 91.24 грн |
| PSMN4R0-30YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 95A; Idm: 378A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 95A
Pulsed drain current: 378A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1668 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.96 грн |
| 15+ | 29.21 грн |
| 25+ | 26.28 грн |
| 100+ | 24.36 грн |
| 250+ | 23.27 грн |
| 500+ | 21.51 грн |
| PSMN7R5-60YLX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 346A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1206 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 89.24 грн |
| 10+ | 70.31 грн |
| 25+ | 62.78 грн |
| 100+ | 58.59 грн |
| 250+ | 55.25 грн |
| 500+ | 50.22 грн |
| 1000+ | 49.39 грн |
| PSMN013-30MLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1559 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.44 грн |
| 22+ | 19.92 грн |
| 25+ | 18.42 грн |
| 100+ | 17.66 грн |
| 250+ | 16.32 грн |
| 500+ | 15.65 грн |
| 1000+ | 14.06 грн |
| 1500+ | 13.90 грн |
| PSMN1R7-60BS,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 306W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 137nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 369 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 263.22 грн |
| 5+ | 210.10 грн |
| 10+ | 193.36 грн |
| 25+ | 186.67 грн |
| 50+ | 174.95 грн |
| 100+ | 164.90 грн |
| PSMN8R5-60YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Pulsed drain current: 303A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1340 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.23 грн |
| 10+ | 66.97 грн |
| 25+ | 61.94 грн |
| 100+ | 58.59 грн |
| 250+ | 52.74 грн |
| 500+ | 50.22 грн |
| PSMN3R5-30YL,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 447A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 447A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1057 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 147.84 грн |
| 10+ | 108.82 грн |
| 25+ | 82.03 грн |
| 100+ | 73.66 грн |
| 250+ | 68.64 грн |
| 500+ | 65.29 грн |
| 1000+ | 58.59 грн |
| PSMN017-60YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1043 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.30 грн |
| 10+ | 48.21 грн |
| 25+ | 39.17 грн |
| 100+ | 34.91 грн |
| 250+ | 32.31 грн |
| 500+ | 30.89 грн |
| 1000+ | 27.79 грн |
| PSMN015-60BS,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 603 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 109.98 грн |
| 10+ | 80.36 грн |
| 25+ | 70.31 грн |
| 100+ | 64.45 грн |
| 250+ | 61.94 грн |
| 500+ | 55.25 грн |
| PSMN013-60YLX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 53 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.89 грн |
| 11+ | 38.50 грн |
| 25+ | 34.32 грн |
| PSMN0R9-25YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1037 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.54 грн |
| 10+ | 125.56 грн |
| 25+ | 105.47 грн |
| 100+ | 95.43 грн |
| 250+ | 87.89 грн |
| 500+ | 83.71 грн |
| 1000+ | 75.34 грн |
| PSMN013-30YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1733 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.17 грн |
| 12+ | 35.32 грн |
| 25+ | 32.06 грн |
| 100+ | 23.19 грн |
| 250+ | 20.93 грн |
| 500+ | 19.34 грн |
| 1000+ | 18.50 грн |
| 1500+ | 16.57 грн |
| PSMN0R9-30YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1331 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.06 грн |
| 10+ | 147.32 грн |
| 25+ | 141.46 грн |
| 100+ | 137.28 грн |
| 250+ | 132.26 грн |
| 500+ | 128.91 грн |
| PSMN030-60YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1471 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.27 грн |
| 14+ | 30.22 грн |
| 25+ | 27.20 грн |
| 100+ | 25.11 грн |
| 250+ | 24.02 грн |
| 500+ | 21.60 грн |
| 1000+ | 21.26 грн |
| PSMN1R2-25YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1391 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.93 грн |
| 10+ | 61.11 грн |
| 25+ | 52.74 грн |
| 100+ | 50.22 грн |
| 250+ | 46.04 грн |
| 500+ | 44.36 грн |
| 1000+ | 40.18 грн |
| PSMN2R2-30YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 100A
Drain-source voltage: 30V
Gate charge: 55nC
On-state resistance: 4.6mΩ
Power dissipation: 141W
Gate-source voltage: ±20V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Mounting: SMD
Drain current: 100A
Drain-source voltage: 30V
Gate charge: 55nC
On-state resistance: 4.6mΩ
Power dissipation: 141W
Gate-source voltage: ±20V
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
на замовлення 22 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 138.82 грн |
| 10+ | 102.96 грн |
| PSMN038-100YLX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 589 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.90 грн |
| 10+ | 44.95 грн |
| 25+ | 40.68 грн |
| 100+ | 37.67 грн |
| 250+ | 35.91 грн |
| 500+ | 32.23 грн |
| PSMN4R6-60BS,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 691 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 183.90 грн |
| 10+ | 128.07 грн |
| 25+ | 115.51 грн |
| 100+ | 107.14 грн |
| 250+ | 102.12 грн |
| 500+ | 92.08 грн |
| PSMN2R0-30YLE,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1317 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 104.57 грн |
| 10+ | 87.89 грн |
| 25+ | 81.20 грн |
| 100+ | 77.01 грн |
| 250+ | 70.31 грн |
| 500+ | 68.64 грн |
| PSMN3R0-60PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 274.94 грн |
| 3+ | 236.05 грн |
| 10+ | 235.21 грн |
| PSMN3R9-60PSQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 175.78 грн |
| 10+ | 167.41 грн |
| PSMN2R0-30PL,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 117nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 117nC
на замовлення 42 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.16 грн |
| 10+ | 132.26 грн |
| PSMN7R0-30YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1390 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.99 грн |
| 11+ | 38.09 грн |
| 25+ | 34.24 грн |
| 100+ | 31.72 грн |
| 250+ | 30.30 грн |
| 500+ | 27.20 грн |
| 1000+ | 26.79 грн |
| PSMN012-100YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1369 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 142.43 грн |
| 10+ | 97.94 грн |
| 25+ | 82.03 грн |
| 100+ | 73.66 грн |
| 250+ | 68.64 грн |
| 500+ | 65.29 грн |
| 1000+ | 58.59 грн |
| PSMN017-30PL,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 13 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 72.82 грн |
| PSMN8R0-40PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 309A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 67 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.71 грн |
| 10+ | 58.59 грн |
| PSMN1R1-30PL,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 32 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 327.23 грн |
| 3+ | 274.56 грн |
| 10+ | 267.86 грн |
| PSMN7R0-60YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1422 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 137.92 грн |
| 10+ | 95.43 грн |
| 25+ | 86.22 грн |
| 100+ | 80.36 грн |
| 250+ | 77.01 грн |
| 500+ | 68.64 грн |
| 1000+ | 65.29 грн |
| PSMN009-100P,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 781 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 184.15 грн |
| 10+ | 175.78 грн |
| PSMN1R8-80SSFJ |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Drain current: 205A
Pulsed drain current: 1158A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 222nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Power dissipation: 341W
Drain current: 205A
Pulsed drain current: 1158A
Case: LFPAK88; SOT1235
Kind of channel: enhancement
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| PSMN1R2-25YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Mounting: SMD
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Drain current: 205A
Pulsed drain current: 1163A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Mounting: SMD
Technology: NextPowerS3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 60.3nC
On-state resistance: 2.87mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 172W
Drain current: 205A
Pulsed drain current: 1163A
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
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| 74LV4060PW,112 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: TSSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: TSSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
на замовлення 232 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.96 грн |
| 14+ | 30.64 грн |
| 25+ | 28.38 грн |
| 96+ | 27.04 грн |
| 192+ | 24.44 грн |
| 74LV4060DB,112 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: SSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Family: LV
Technology: TTL
Type of integrated circuit: digital
Mounting: SMD
Kind of package: tube
Case: SSOP16
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of integrated circuit: 14bit; binary counter
на замовлення 141 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.69 грн |
| 9+ | 47.71 грн |
| HEF4541BT-Q100J |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; SO14; -40÷85°C; 3÷15VDC
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; SO14; -40÷85°C; 3÷15VDC
Type of integrated circuit: digital
Case: SO14
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
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| HEF4541BT,118 |
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Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; CMOS; SMD; SO14; HEF4000B
Type of integrated circuit: digital
Family: HEF4000B
Technology: CMOS
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
Category: Counters/dividers
Description: IC: digital; 16-stage,binary counter; CMOS; SMD; SO14; HEF4000B
Type of integrated circuit: digital
Family: HEF4000B
Technology: CMOS
Case: SO14
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of integrated circuit: 16-stage; binary counter
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| PUMH17,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
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| 1N4531,113 |
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Виробник: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; reel; Ifsm: 1A; DO34; Ufmax: 1V
Type of diode: switching
Power dissipation: 0.5W
Kind of package: reel
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; reel; Ifsm: 1A; DO34; Ufmax: 1V
Type of diode: switching
Power dissipation: 0.5W
Kind of package: reel
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
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| 1N4531,133 |
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Виробник: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
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| 1N4531,143 |
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Виробник: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 200mA; Ammo Pack; Ifsm: 1A; DO34; 500mW
Type of diode: switching
Power dissipation: 0.5W
Kind of package: Ammo Pack
Case: DO34
Mounting: THT
Semiconductor structure: single diode
Max. off-state voltage: 75V
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Load current: 0.2A
Max. load current: 0.45A
Max. forward impulse current: 1A
Max. forward voltage: 1V
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| PEMH11,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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| PEMH11,315 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT666
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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| PUMH13,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 19599 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.21 грн |
| 80+ | 5.27 грн |
| 93+ | 4.52 грн |
| 119+ | 3.53 грн |
| 250+ | 2.65 грн |
| 500+ | 2.36 грн |
| 1000+ | 2.21 грн |
| 3000+ | 2.06 грн |
| 6000+ | 1.93 грн |
| PUMH10,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 230MHz
на замовлення 4994 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.21 грн |
| 75+ | 5.61 грн |
| 104+ | 4.05 грн |
| 124+ | 3.38 грн |
| 250+ | 2.56 грн |
| 500+ | 2.30 грн |
| 1000+ | 2.17 грн |
| 3000+ | 2.03 грн |
| PUMH1,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 19318 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.01 грн |
| 72+ | 5.86 грн |
| 107+ | 3.92 грн |
| 119+ | 3.53 грн |
| 250+ | 2.65 грн |
| 500+ | 2.36 грн |
| 1000+ | 2.21 грн |
| 3000+ | 2.06 грн |
| 15000+ | 1.93 грн |
| PUMH15,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
на замовлення 460 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.82 грн |
| 76+ | 5.52 грн |
| 127+ | 3.31 грн |
| 161+ | 2.60 грн |
| 250+ | 2.34 грн |
| PUMH18,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
на замовлення 615 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.82 грн |
| 60+ | 7.03 грн |
| 102+ | 4.12 грн |
| 119+ | 3.53 грн |
| 250+ | 2.65 грн |
| 500+ | 2.36 грн |
| PUMH19,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
на замовлення 5533 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.51 грн |
| 122+ | 3.43 грн |
| 163+ | 2.58 грн |
| 179+ | 2.34 грн |
| 250+ | 2.17 грн |
| 500+ | 2.07 грн |
| 1000+ | 1.86 грн |
| 3000+ | 1.82 грн |
| PUMH10-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 100
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Current gain: 100
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| PUMH1-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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| PUMH10,125 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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| PUMH10Z |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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| PUMH15-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 4.7kΩ
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| PUMH16,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
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| PMST5551,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
на замовлення 2502 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.82 грн |
| 49+ | 8.62 грн |
| 56+ | 7.60 грн |
| 100+ | 6.41 грн |
| 250+ | 4.79 грн |
| 500+ | 4.34 грн |
| 1000+ | 3.98 грн |
| BZX84-C68,215 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 68V; SMD; reel,tape; SOT23; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Zener voltage: 68V
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 68V; SMD; reel,tape; SOT23; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 0.9V
Tolerance: ±5%
Zener voltage: 68V
на замовлення 5 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.15 грн |
| BAS16H,115 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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| 74HCT4046AD,118 |
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Виробник: NEXPERIA
Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Family: HCT
Kind of package: reel; tape
Kind of integrated circuit: phase-locked loop
Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 4.5...5.5V DC
Technology: CMOS; TTL
Family: HCT
Kind of package: reel; tape
Kind of integrated circuit: phase-locked loop
на замовлення 409 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 82.93 грн |
| 10+ | 58.59 грн |
| 100+ | 51.90 грн |
| BCW72,215 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
на замовлення 2455 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.32 грн |
| 37+ | 11.55 грн |
| 43+ | 9.96 грн |
| 74LV04BQ,115 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; VFQFN14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: VFQFN14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; VFQFN14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: VFQFN14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
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| 74LV04D,118 |
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Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; SO14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; TTL; SMD; SO14; 1÷5.5VDC; -40÷125°C; LV
Type of integrated circuit: digital
Number of channels: hex; 6
Technology: TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LV
Kind of package: reel; tape
Supply voltage: 1...5.5V DC
Kind of gate: NOT
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