| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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74HC259PW,118 | NEXPERIA |
Category: LatchesDescription: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP16; -40÷125°C; HC Type of integrated circuit: digital Kind of integrated circuit: D latch Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP16 Operating temperature: -40...125°C Family: HC Kind of package: reel; tape Technology: CMOS Trigger: level-triggered Quiescent current: 160µA Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74HC259BQ,115 | NEXPERIA |
Category: LatchesDescription: IC: digital; 8bit,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; DHVQFN16 Type of integrated circuit: digital Kind of integrated circuit: 8bit; latch Supply voltage: 2...6V DC Mounting: SMD Case: DHVQFN16 Operating temperature: -40...125°C Family: HC Kind of package: reel; tape Technology: CMOS Number of inputs: 6 Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| 74HC259BZX | NEXPERIA |
Category: LatchesDescription: IC: digital; 8bit,latch; 4.5÷5.5VDC; DHXQFN16; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: 8bit; latch Supply voltage: 4.5...5.5V DC Case: DHXQFN16 Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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74HCT251D,653 | NEXPERIA |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer; Ch: 8; IN: 8; CMOS,TTL; SMD; SO16; HCT Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 8 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: SO16 Family: HCT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Kind of output: 3-state |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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74HC377D,653 | NEXPERIA |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20; HC; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
на замовлення 553 шт: термін постачання 14-30 дні (днів) |
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PBSS4420D,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 4A; SC74,SOT457,TSOP6 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 4A Case: SC74; SOT457; TSOP6 Current gain: 100...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74AHC164BQ,115 | NEXPERIA |
Category: Shift registersDescription: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Mounting: SMD Case: DHVQFN14 Family: AHC Operating temperature: -40...125°C Supply voltage: 2...5.5V DC Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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74AHC164PW,118 | NEXPERIA |
Category: Shift registersDescription: IC: digital; 8bit,shift register,serial input,parallel out Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel out; serial input; shift register Mounting: SMD Case: TSSOP14 Family: AHC Operating temperature: -40...125°C Supply voltage: 2...5.5V DC Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
| 74AUP2G125GXX | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,line driver; Ch: 2; CMOS; SMD; X2SON8; -40÷125°C Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -40...125°C Technology: CMOS Kind of package: reel; tape Case: X2SON8 Family: AUP Kind of integrated circuit: buffer; line driver Number of channels: 2 Mounting: SMD Supply voltage: 0.8...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
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BZX84-A13,215 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.25W; 13V; SMD; SOT23; reel,tape; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 13V Mounting: SMD Tolerance: ±1% Max. forward voltage: 0.9V Case: SOT23 Kind of package: reel; tape Max. load current: 0.2A Semiconductor structure: single diode |
на замовлення 547 шт: термін постачання 14-30 дні (днів) |
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BZV85-C9V1,133 | NEXPERIA |
Category: THT Zener diodesDescription: Diode: Zener; 1/1.3W; 9.1V; DO41; single diode; 500mA; Ufmax: 1V Type of diode: Zener Power dissipation: 1/1.3W Zener voltage: 9.1V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Max. load current: 0.5A Max. forward voltage: 1V Kind of package: Ammo Pack |
на замовлення 2820 шт: термін постачання 14-30 дні (днів) |
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BZT52H-C9V1,115 | NEXPERIA |
Category: SMD Zener diodesDescription: Diode: Zener; 0.375/0.83W; 9.1V; SMD; SOD123F; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.375/0.83W Zener voltage: 9.1V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.9V Max. load current: 0.25A |
на замовлення 140 шт: термін постачання 14-30 дні (днів) |
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BZV85-C9V1,113 | NEXPERIA |
Category: THT Zener diodesDescription: Diode: Zener; 1/1.3W; 9.1V; DO41; single diode; 500mA; Ufmax: 1V Type of diode: Zener Power dissipation: 1/1.3W Zener voltage: 9.1V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Max. load current: 0.5A Max. forward voltage: 1V Kind of package: reel; tape |
на замовлення 5344 шт: термін постачання 14-30 дні (днів) |
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| BUK9K89-100E,115 | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.9A Pulsed drain current: 50A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 245mΩ Mounting: SMD Gate charge: 16.8nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BUK9K8R7-40EX | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 211A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.9mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS56,215 | NEXPERIA |
Category: SMD universal diodesDescription: Diode: switching; SMD; 60V; 200mA; 6ns; SOT143B; Ufmax: 1V; Ifsm: 9A Mounting: SMD Case: SOT143B Type of diode: switching Reverse recovery time: 6ns Max. forward impulse current: 9A Max. forward voltage: 1V Features of semiconductor devices: fast switching Max. off-state voltage: 60V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: double independent |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTA144EU,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 80 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 180MHz |
на замовлення 1027 шт: термін постачання 14-30 дні (днів) |
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PDTA144ET,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 80 Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTA144WT,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 60 Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTA144WU,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Current gain: 60 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTA144TT,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 47kΩ Current gain: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTA144TU,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTA144VT,215 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 47kΩ Base-emitter resistor: 10kΩ Current gain: 40 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PDTA144VU,115 | NEXPERIA |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 10kΩ Current gain: 40 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BSP122,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 0.55A; 1.5W; SC73,SOT223 Power dissipation: 1.5W Polarisation: unipolar Drain current: 0.55A Kind of channel: enhancement Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±2V Kind of package: reel; tape Case: SC73; SOT223 On-state resistance: 2.5Ω Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSP126,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.375A Power dissipation: 1.5W Case: SC73; SOT223 Gate-source voltage: ±20V On-state resistance: 7.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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BSP19,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223 Collector-emitter voltage: 400V Power dissipation: 1.2W Polarisation: bipolar Type of transistor: NPN Current gain: 40 Kind of package: reel; tape Case: SC73; SOT223 Frequency: 70MHz Collector current: 0.1A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX54-16,115 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.35W Case: SC62; SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Current gain: 100...250 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX54-16,135 | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.35W Case: SC62; SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Current gain: 100...250 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCX54-16-QX | NEXPERIA |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.35W Case: SC62; SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Application: automotive industry Current gain: 100...250 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 74ALVCH16501DGGY | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; 18bit,3-state,bus transceiver; CMOS,TTL; SMD; ALVCH Type of integrated circuit: digital Kind of integrated circuit: 3-state; 18bit; bus transceiver Technology: CMOS; TTL Mounting: SMD Case: TSSOP56 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.2...3.6V DC Family: ALVCH |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
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PESD24VS2UT,215 | NEXPERIA |
Category: Protection diodes - arraysDescription: Diode: TVS array; 26.5÷27.5V; 3A; 160W; ESD; SOT23; Ch: 2 Type of diode: TVS array Version: ESD Peak pulse power dissipation: 0.16kW Max. off-state voltage: 24V Breakdown voltage: 26.5...27.5V Max. forward impulse current: 3A Semiconductor structure: common anode; double; unidirectional Case: SOT23 Mounting: SMD Leakage current: 1µA Number of channels: 2 Application: automotive industry |
на замовлення 43782 шт: термін постачання 14-30 дні (днів) |
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PESD3V3L1BAZ | NEXPERIA |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323 Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.5kW Max. off-state voltage: 3.3V Breakdown voltage: 5.8...6.9V Max. forward impulse current: 18A Semiconductor structure: bidirectional Case: SC76; SOD323 Mounting: SMD Leakage current: 2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC125D,118 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Kind of output: 3-state Family: VHC Supply voltage: 2...5.5V DC Number of inputs: 2 Kind of package: reel; tape Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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74VHC125PW,118 | NEXPERIA |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver Number of channels: 4 Technology: CMOS Mounting: SMD Case: TSSOP14 Kind of output: 3-state Family: VHC Supply voltage: 2...5.5V DC Number of inputs: 2 Kind of package: reel; tape Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN5R5-60YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 74A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 8.3mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1130 шт: термін постачання 14-30 дні (днів) |
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PSMN4R1-60YLX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 593A |
на замовлення 1048 шт: термін постачання 14-30 дні (днів) |
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PSMN013-40VLDX | NEXPERIA |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Power dissipation: 46W Case: LFPAK56D; SOT1205 Gate-source voltage: ±20V On-state resistance: 32.8mΩ Mounting: SMD Gate charge: 19.4nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 169A Technology: NextPowerS3 |
на замовлення 1460 шт: термін постачання 14-30 дні (днів) |
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PSMN1R0-30YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 272W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 179 шт: термін постачання 14-30 дні (днів) |
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PSMN7R5-60YLX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 61A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 19.7mΩ Mounting: SMD Gate charge: 60.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 346A Features of semiconductor devices: logic level |
на замовлення 1172 шт: термін постачання 14-30 дні (днів) |
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PSMN013-30MLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Power dissipation: 38W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 157A |
на замовлення 1489 шт: термін постачання 14-30 дні (днів) |
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PSMN8R5-60YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 76A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 303A |
на замовлення 1288 шт: термін постачання 14-30 дні (днів) |
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PSMN3R5-30YL,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 74W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.37mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 447A |
на замовлення 1055 шт: термін постачання 14-30 дні (днів) |
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PSMN017-60YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W Mounting: SMD Power dissipation: 74W Gate charge: 20nC Polarisation: unipolar Drain current: 44A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 36.1mΩ |
на замовлення 325 шт: термін постачання 14-30 дні (днів) |
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PSMN015-60BS,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 86W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 20.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 201A |
на замовлення 567 шт: термін постачання 14-30 дні (днів) |
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PSMN013-60YLX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 53A Power dissipation: 95W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 12.1mΩ Mounting: SMD Gate charge: 33.2nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 212A |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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PSMN0R9-25YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 272W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.125mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1028 шт: термін постачання 14-30 дні (днів) |
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PSMN013-30YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 26W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1683 шт: термін постачання 14-30 дні (днів) |
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PSMN0R9-30YLDX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 284A Power dissipation: 291W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 1.44mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.8kA Features of semiconductor devices: logic level |
на замовлення 1325 шт: термін постачання 14-30 дні (днів) |
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PSMN030-60YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 29A Power dissipation: 56W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 49.6mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 116A |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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PSMN1R2-25YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 179W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.35mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1133A |
на замовлення 1391 шт: термін постачання 14-30 дні (днів) |
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PSMN038-100YLX | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21.3A Power dissipation: 94.9W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 103.5mΩ Mounting: SMD Gate charge: 39.2nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 120A Features of semiconductor devices: logic level |
на замовлення 589 шт: термін постачання 14-30 дні (днів) |
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PSMN4R6-60BS,118 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 211W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 70.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 565A |
на замовлення 689 шт: термін постачання 14-30 дні (днів) |
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PSMN2R0-30YLE,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1015A |
на замовлення 1304 шт: термін постачання 14-30 дні (днів) |
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PSMN3R0-60PS,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 306W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 824A |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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PSMN3R9-60PSQ | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Power dissipation: 263W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.94mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 705A |
на замовлення 64 шт: термін постачання 14-30 дні (днів) |
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PSMN2R0-30PL,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 34 шт: термін постачання 14-30 дні (днів) |
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PSMN7R0-30YLC,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Power dissipation: 48W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 245A |
на замовлення 1390 шт: термін постачання 14-30 дні (днів) |
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PSMN012-100YS,115 | NEXPERIA |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 130W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 35.8mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1370 шт: термін постачання 14-30 дні (днів) |
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PSMN017-30PL,127 | NEXPERIA |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 45W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 5.1nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 152A |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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| 74HC259PW,118 |
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Виробник: NEXPERIA
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP16; -40÷125°C; HC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Trigger: level-triggered
Quiescent current: 160µA
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷6VDC; SMD; TSSOP16; -40÷125°C; HC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Trigger: level-triggered
Quiescent current: 160µA
Number of channels: 8
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од. на суму грн.
| 74HC259BQ,115 |
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Виробник: NEXPERIA
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; DHVQFN16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch
Supply voltage: 2...6V DC
Mounting: SMD
Case: DHVQFN16
Operating temperature: -40...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Number of inputs: 6
Number of channels: 1
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; CMOS; 2÷6VDC; SMD; DHVQFN16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch
Supply voltage: 2...6V DC
Mounting: SMD
Case: DHVQFN16
Operating temperature: -40...125°C
Family: HC
Kind of package: reel; tape
Technology: CMOS
Number of inputs: 6
Number of channels: 1
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74HC259BZX |
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Виробник: NEXPERIA
Category: Latches
Description: IC: digital; 8bit,latch; 4.5÷5.5VDC; DHXQFN16; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch
Supply voltage: 4.5...5.5V DC
Case: DHXQFN16
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Latches
Description: IC: digital; 8bit,latch; 4.5÷5.5VDC; DHXQFN16; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; latch
Supply voltage: 4.5...5.5V DC
Case: DHXQFN16
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74HCT251D,653 |
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Виробник: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 8; IN: 8; CMOS,TTL; SMD; SO16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 8
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 8; IN: 8; CMOS,TTL; SMD; SO16; HCT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 8
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Kind of output: 3-state
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.55 грн |
| 19+ | 22.86 грн |
| 25+ | 20.96 грн |
| 100+ | 18.32 грн |
| 250+ | 16.67 грн |
| 500+ | 16.42 грн |
| 74HC377D,653 |
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Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20; HC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
на замовлення 553 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.21 грн |
| 10+ | 45.72 грн |
| 25+ | 40.93 грн |
| 100+ | 34.33 грн |
| 500+ | 30.87 грн |
| PBSS4420D,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; SC74,SOT457,TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Case: SC74; SOT457; TSOP6
Current gain: 100...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 4A; SC74,SOT457,TSOP6
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 4A
Case: SC74; SOT457; TSOP6
Current gain: 100...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| 74AHC164BQ,115 |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: DHVQFN14
Family: AHC
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: DHVQFN14
Family: AHC
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 74AHC164PW,118 |
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Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: TSSOP14
Family: AHC
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Mounting: SMD
Case: TSSOP14
Family: AHC
Operating temperature: -40...125°C
Supply voltage: 2...5.5V DC
Technology: CMOS
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 74AUP2G125GXX |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,line driver; Ch: 2; CMOS; SMD; X2SON8; -40÷125°C
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Kind of package: reel; tape
Case: X2SON8
Family: AUP
Kind of integrated circuit: buffer; line driver
Number of channels: 2
Mounting: SMD
Supply voltage: 0.8...3.6V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,line driver; Ch: 2; CMOS; SMD; X2SON8; -40÷125°C
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...125°C
Technology: CMOS
Kind of package: reel; tape
Case: X2SON8
Family: AUP
Kind of integrated circuit: buffer; line driver
Number of channels: 2
Mounting: SMD
Supply voltage: 0.8...3.6V DC
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BZX84-A13,215 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; SOT23; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±1%
Max. forward voltage: 0.9V
Case: SOT23
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; SOT23; reel,tape; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±1%
Max. forward voltage: 0.9V
Case: SOT23
Kind of package: reel; tape
Max. load current: 0.2A
Semiconductor structure: single diode
на замовлення 547 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.88 грн |
| 16+ | 26.41 грн |
| 18+ | 23.60 грн |
| BZV85-C9V1,133 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 9.1V; DO41; single diode; 500mA; Ufmax: 1V
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 9.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 9.1V; DO41; single diode; 500mA; Ufmax: 1V
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 9.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Kind of package: Ammo Pack
на замовлення 2820 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 6.13 грн |
| 130+ | 3.24 грн |
| 250+ | 2.92 грн |
| BZT52H-C9V1,115 |
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Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 9.1V; SMD; SOD123F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.9V
Max. load current: 0.25A
Category: SMD Zener diodes
Description: Diode: Zener; 0.375/0.83W; 9.1V; SMD; SOD123F; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.375/0.83W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.9V
Max. load current: 0.25A
на замовлення 140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.22 грн |
| 84+ | 4.95 грн |
| 100+ | 4.13 грн |
| BZV85-C9V1,113 |
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Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 9.1V; DO41; single diode; 500mA; Ufmax: 1V
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 9.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 9.1V; DO41; single diode; 500mA; Ufmax: 1V
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 9.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Kind of package: reel; tape
на замовлення 5344 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.22 грн |
| 40+ | 10.40 грн |
| 48+ | 8.75 грн |
| BUK9K89-100E,115 |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.9A
Pulsed drain current: 50A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.9A; Idm: 50A; 38W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.9A
Pulsed drain current: 50A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 16.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| BUK9K8R7-40EX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 211A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 211A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 211A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 18.9mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| BAS56,215 |
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Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 60V; 200mA; 6ns; SOT143B; Ufmax: 1V; Ifsm: 9A
Mounting: SMD
Case: SOT143B
Type of diode: switching
Reverse recovery time: 6ns
Max. forward impulse current: 9A
Max. forward voltage: 1V
Features of semiconductor devices: fast switching
Max. off-state voltage: 60V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: double independent
Category: SMD universal diodes
Description: Diode: switching; SMD; 60V; 200mA; 6ns; SOT143B; Ufmax: 1V; Ifsm: 9A
Mounting: SMD
Case: SOT143B
Type of diode: switching
Reverse recovery time: 6ns
Max. forward impulse current: 9A
Max. forward voltage: 1V
Features of semiconductor devices: fast switching
Max. off-state voltage: 60V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: double independent
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| PDTA144EU,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 80
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 180MHz
на замовлення 1027 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.22 грн |
| 93+ | 4.46 грн |
| 107+ | 3.86 грн |
| 136+ | 3.05 грн |
| 250+ | 2.62 грн |
| 500+ | 1.96 грн |
| 1000+ | 1.82 грн |
| PDTA144ET,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 80
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 180MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 80
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 180MHz
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| PDTA144WT,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 60
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 60
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
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| PDTA144WU,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 60
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 60
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| PDTA144TT,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Current gain: 100
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Current gain: 100
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| PDTA144TU,115 |
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 100
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 100
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| PDTA144VT,215 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Current gain: 40
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Current gain: 40
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| PDTA144VU,115 |
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Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Current gain: 40
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 10kΩ
Current gain: 40
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Мінімальне замовлення: 3000 шт
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| BSP122,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.55A; 1.5W; SC73,SOT223
Power dissipation: 1.5W
Polarisation: unipolar
Drain current: 0.55A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±2V
Kind of package: reel; tape
Case: SC73; SOT223
On-state resistance: 2.5Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.55A; 1.5W; SC73,SOT223
Power dissipation: 1.5W
Polarisation: unipolar
Drain current: 0.55A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±2V
Kind of package: reel; tape
Case: SC73; SOT223
On-state resistance: 2.5Ω
Mounting: SMD
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| BSP126,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.375A
Power dissipation: 1.5W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.375A; 1.5W; SC73,SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.375A
Power dissipation: 1.5W
Case: SC73; SOT223
Gate-source voltage: ±20V
On-state resistance: 7.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.22 грн |
| 12+ | 35.40 грн |
| BSP19,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223
Collector-emitter voltage: 400V
Power dissipation: 1.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40
Kind of package: reel; tape
Case: SC73; SOT223
Frequency: 70MHz
Collector current: 0.1A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.1A; 1.2W; SC73,SOT223
Collector-emitter voltage: 400V
Power dissipation: 1.2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40
Kind of package: reel; tape
Case: SC73; SOT223
Frequency: 70MHz
Collector current: 0.1A
Mounting: SMD
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| BCX54-16,115 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 100...250
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 100...250
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| BCX54-16,135 |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 100...250
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 100...250
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| BCX54-16-QX |
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Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Current gain: 100...250
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Current gain: 100...250
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| 74ALVCH16501DGGY |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,3-state,bus transceiver; CMOS,TTL; SMD; ALVCH
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 18bit; bus transceiver
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Family: ALVCH
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,3-state,bus transceiver; CMOS,TTL; SMD; ALVCH
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 18bit; bus transceiver
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Family: ALVCH
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Мінімальне замовлення: 2000 шт
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| PESD24VS2UT,215 |
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Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.5÷27.5V; 3A; 160W; ESD; SOT23; Ch: 2
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Breakdown voltage: 26.5...27.5V
Max. forward impulse current: 3A
Semiconductor structure: common anode; double; unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.5÷27.5V; 3A; 160W; ESD; SOT23; Ch: 2
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Breakdown voltage: 26.5...27.5V
Max. forward impulse current: 3A
Semiconductor structure: common anode; double; unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Number of channels: 2
Application: automotive industry
на замовлення 43782 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.33 грн |
| 18+ | 23.52 грн |
| 100+ | 14.61 грн |
| 500+ | 10.15 грн |
| 1000+ | 7.59 грн |
| 3000+ | 6.85 грн |
| 15000+ | 6.35 грн |
| PESD3V3L1BAZ |
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Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 500W; 5.8÷6.9V; 18A; bidirectional; SC76,SOD323
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.5kW
Max. off-state voltage: 3.3V
Breakdown voltage: 5.8...6.9V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Case: SC76; SOD323
Mounting: SMD
Leakage current: 2µA
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| 74VHC125D,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Number of inputs: 2
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Number of inputs: 2
Kind of package: reel; tape
Operating temperature: -40...125°C
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Мінімальне замовлення: 2500 шт
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| 74VHC125PW,118 |
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Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Number of inputs: 2
Kind of package: reel; tape
Operating temperature: -40...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Kind of output: 3-state
Family: VHC
Supply voltage: 2...5.5V DC
Number of inputs: 2
Kind of package: reel; tape
Operating temperature: -40...125°C
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| PSMN5R5-60YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 74A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 74A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1130 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.98 грн |
| 10+ | 111.41 грн |
| 100+ | 99.86 грн |
| PSMN4R1-60YLX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 593A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 593A
на замовлення 1048 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.10 грн |
| 10+ | 85.83 грн |
| 25+ | 76.75 грн |
| 100+ | 70.97 грн |
| 250+ | 68.50 грн |
| 500+ | 61.07 грн |
| 1000+ | 60.25 грн |
| PSMN013-40VLDX |
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Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 169A
Technology: NextPowerS3
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
Gate-source voltage: ±20V
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 169A
Technology: NextPowerS3
на замовлення 1460 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.10 грн |
| 10+ | 60.25 грн |
| 25+ | 50.34 грн |
| 100+ | 45.39 грн |
| 250+ | 42.09 грн |
| 500+ | 39.61 грн |
| 1000+ | 36.31 грн |
| PSMN1R0-30YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 179 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 144.87 грн |
| 10+ | 112.24 грн |
| 25+ | 101.51 грн |
| 100+ | 94.08 грн |
| PSMN7R5-60YLX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 346A
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 346A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 19.7mΩ
Mounting: SMD
Gate charge: 60.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 346A
Features of semiconductor devices: logic level
на замовлення 1172 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 87.99 грн |
| 10+ | 69.32 грн |
| 25+ | 61.90 грн |
| 100+ | 57.77 грн |
| 250+ | 54.47 грн |
| 500+ | 49.52 грн |
| 1000+ | 48.69 грн |
| PSMN013-30MLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 157A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Power dissipation: 38W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 157A
на замовлення 1489 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.11 грн |
| 22+ | 19.64 грн |
| 25+ | 18.16 грн |
| 100+ | 17.41 грн |
| 250+ | 16.09 грн |
| 500+ | 15.43 грн |
| 1000+ | 13.86 грн |
| PSMN8R5-60YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 303A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 76A; Idm: 303A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 76A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 303A
на замовлення 1288 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.10 грн |
| 10+ | 66.02 грн |
| 25+ | 61.07 грн |
| 100+ | 57.77 грн |
| 250+ | 51.99 грн |
| 500+ | 49.52 грн |
| PSMN3R5-30YL,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 447A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 447A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.37mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 447A
на замовлення 1055 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 145.76 грн |
| 10+ | 107.29 грн |
| 25+ | 80.88 грн |
| 100+ | 72.62 грн |
| 250+ | 67.67 грн |
| 500+ | 64.37 грн |
| 1000+ | 57.77 грн |
| PSMN017-60YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Mounting: SMD
Power dissipation: 74W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Mounting: SMD
Power dissipation: 74W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36.1mΩ
на замовлення 325 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.44 грн |
| 10+ | 47.54 грн |
| 25+ | 38.62 грн |
| 100+ | 34.41 грн |
| 250+ | 31.86 грн |
| PSMN015-60BS,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 201A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 201A
на замовлення 567 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 108.43 грн |
| 10+ | 79.23 грн |
| 25+ | 69.32 грн |
| 100+ | 63.55 грн |
| 250+ | 61.07 грн |
| 500+ | 54.47 грн |
| PSMN013-60YLX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 212A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 212A
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.42 грн |
| PSMN0R9-25YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1028 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.42 грн |
| 10+ | 123.79 грн |
| 25+ | 103.99 грн |
| 100+ | 94.08 грн |
| 250+ | 86.65 грн |
| 500+ | 82.53 грн |
| 1000+ | 74.28 грн |
| PSMN013-30YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1683 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.55 грн |
| 12+ | 34.83 грн |
| 25+ | 31.61 грн |
| 100+ | 22.86 грн |
| 250+ | 20.63 грн |
| 500+ | 19.06 грн |
| 1000+ | 18.24 грн |
| 1500+ | 16.34 грн |
| PSMN0R9-30YLDX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8kA
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.8kA
Features of semiconductor devices: logic level
на замовлення 1325 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 161.76 грн |
| 10+ | 145.25 грн |
| 25+ | 139.47 грн |
| 100+ | 135.35 грн |
| 250+ | 130.39 грн |
| 500+ | 127.09 грн |
| PSMN030-60YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 116A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 116A
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.66 грн |
| 14+ | 29.79 грн |
| 25+ | 26.82 грн |
| PSMN1R2-25YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1133A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1133A
на замовлення 1391 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 81.77 грн |
| 10+ | 60.25 грн |
| 25+ | 51.99 грн |
| 100+ | 49.52 грн |
| 250+ | 45.39 грн |
| 500+ | 43.74 грн |
| 1000+ | 39.61 грн |
| PSMN038-100YLX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 120A
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 120A
Features of semiconductor devices: logic level
на замовлення 589 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 63.99 грн |
| 10+ | 44.32 грн |
| 25+ | 40.11 грн |
| 100+ | 37.14 грн |
| 250+ | 35.40 грн |
| 500+ | 31.77 грн |
| PSMN4R6-60BS,118 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 565A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 565A
на замовлення 689 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 181.31 грн |
| 10+ | 126.27 грн |
| 25+ | 113.89 грн |
| 100+ | 105.64 грн |
| 250+ | 100.68 грн |
| 500+ | 90.78 грн |
| PSMN2R0-30YLE,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1015A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1015A
на замовлення 1304 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 103.10 грн |
| 10+ | 86.65 грн |
| 25+ | 80.05 грн |
| 100+ | 75.93 грн |
| 250+ | 69.32 грн |
| 500+ | 67.67 грн |
| PSMN3R0-60PS,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 824A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 824A
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 271.07 грн |
| 3+ | 232.73 грн |
| 10+ | 224.48 грн |
| PSMN3R9-60PSQ |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 705A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 705A
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 173.31 грн |
| 10+ | 160.93 грн |
| PSMN2R0-30PL,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 34 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 146.07 грн |
| 10+ | 130.39 грн |
| PSMN7R0-30YLC,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 245A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 245A
на замовлення 1390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.10 грн |
| 12+ | 36.23 грн |
| 50+ | 29.79 грн |
| 100+ | 27.15 грн |
| 250+ | 26.41 грн |
| PSMN012-100YS,115 |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1370 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 140.42 грн |
| 10+ | 96.56 грн |
| 25+ | 80.88 грн |
| 100+ | 72.62 грн |
| 250+ | 67.67 грн |
| 500+ | 64.37 грн |
| 1000+ | 57.77 грн |
| PSMN017-30PL,127 |
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Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.80 грн |






































