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BZX84-A2V7-QR NEXPERIA BZX84-Q_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.7V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±1%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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BAV20,113 NEXPERIA BAV20.pdf Category: THT universal diodes
Description: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel
Max. forward impulse current: 9A
Case: SOD27
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.4W
Leakage current: 0.1mA
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I74F04D602 NEXPERIA Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 939 шт:
термін постачання 21-30 дні (днів)
100+62.72 грн
500+50.58 грн
Мінімальне замовлення: 100
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BUK9616-75B,118 BUK9616-75B,118 NEXPERIA BUK9616-75B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W
Application: automotive industry
Power dissipation: 157W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 270A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 75V
Drain current: 47A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
на замовлення 796 шт:
термін постачання 21-30 дні (днів)
4+104.81 грн
5+88.13 грн
14+67.44 грн
37+63.61 грн
Мінімальне замовлення: 4
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BZX84-C11,215 BZX84-C11,215 NEXPERIA BZX84_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 11V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
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74LVC1G79GW,125 74LVC1G79GW,125 NEXPERIA 74LVC1G79.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; TSSOP5
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Trigger: positive-edge-triggered
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74LVC1G79GM,115 NEXPERIA 74LVC1G79GM,115.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; XSON6
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Trigger: positive-edge-triggered
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74LVC1G79GM,132 NEXPERIA 74LVC1G79GM,132.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; XSON6
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Trigger: positive-edge-triggered
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74LVC1G79GS,132 NEXPERIA 74LVC1G79.pdf Category: Gates, inverters
Description: IC: digital; inverter; CMOS; SMD; XSON6; Mini Logic; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
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BAT160S-QX NEXPERIA BAT160S-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT223; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT223
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: double series
Application: automotive industry
Kind of package: reel; tape
Max. forward voltage: 0.65V
Max. forward impulse current: 10A
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PSMN1R1-30PL,127 PSMN1R1-30PL,127 NEXPERIA PSMN1R1-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Case: SOT78; TO220AB
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 338W
Polarisation: unipolar
Kind of package: tube
Gate charge: 243nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1609A
Mounting: THT
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
2+323.51 грн
5+224.54 грн
12+212.27 грн
Мінімальне замовлення: 2
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PMEG150G20ELRX PMEG150G20ELRX NEXPERIA PMEG150G20ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 14ns
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)
22+19.23 грн
32+12.34 грн
93+9.93 грн
255+9.39 грн
Мінімальне замовлення: 22
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PMEG120G10ELRX PMEG120G10ELRX NEXPERIA PMEG120G10ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 12ns
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PMEG150G10ELRX PMEG150G10ELRX NEXPERIA PMEG150G10ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
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PMEG120G20ELRX PMEG120G20ELRX NEXPERIA PMEG120G20ELR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 2A; 11ns; SOD123W; Ufmax: 0.77V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 11ns
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PZU5.6B2L,315 PZU5.6B2L,315 NEXPERIA PZUXBL_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; DFN1006-2,SOD882; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: DFN1006-2; SOD882
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 7910 шт:
термін постачання 21-30 дні (днів)
34+12.38 грн
48+8.12 грн
70+5.50 грн
100+4.65 грн
297+3.01 грн
816+2.85 грн
5000+2.74 грн
Мінімальне замовлення: 34
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NUP1301,215 NUP1301,215 NEXPERIA NUP1301.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Max. off-state voltage: 80V
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 4A
Peak pulse power dissipation: 220W
на замовлення 897 шт:
термін постачання 21-30 дні (днів)
36+11.55 грн
52+7.45 грн
75+6.74 грн
100+6.27 грн
243+3.69 грн
669+3.49 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
74LVC1G14GM,115 NEXPERIA 74LVC1G14GM,115.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
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74LVC1G14GN,132 NEXPERIA 74LVC1G14GN,132.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 1; IN: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Kind of integrated circuit: inverter; Schmitt trigger
Number of inputs: 1
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74LVC1G14GS,132 NEXPERIA 74LVC1G14GS,132.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
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74LVC1G14GX4-Q100Z NEXPERIA 74LVC1G14_Q100.pdf Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; CMOS; SMD; X2SON4; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Kind of integrated circuit: inverter
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74LVC1G14GX4Z NEXPERIA 74LVC1G14GX4Z.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; X2SON4; 1.65÷5.5VDC; 4uA; 14ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Delay time: 14ns
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74LVC161PW,112 74LVC161PW,112 NEXPERIA 74LVC161.pdf Category: Counters/dividers
Description: IC: digital; 4bit,asynchronous,binary counter,synchronous; SMD
Type of integrated circuit: digital
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 1.2...3.6V DC
Integrated circuit features: 5V tolerant on inputs/outputs
Technology: CMOS; TTL
Kind of integrated circuit: 4bit; asynchronous; binary counter; synchronous
Family: LVC
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
3+137.82 грн
Мінімальне замовлення: 3
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74LVC161BQ,115 NEXPERIA 74LVC161BQ,115.pdf Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Integrated circuit features: 5V tolerant on inputs/outputs
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74LVC161D,118 74LVC161D,118 NEXPERIA 74LVC161D,118.pdf Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Integrated circuit features: 5V tolerant on inputs/outputs
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74LVC161PW,118 NEXPERIA 74LVC161PW,118.pdf Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Integrated circuit features: 5V tolerant on inputs/outputs
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74LVC163BQ,115 NEXPERIA 74LVC163BQ,115.pdf Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
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74LVC163D,118 74LVC163D,118 NEXPERIA 74LVC163D,118.pdf Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
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74LVC163PW,118 NEXPERIA 74LVC163PW,118.pdf Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
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MMBZ9V1AL,215
+1
 		MMBZ9V1AL,215 NEXPERIA MMBZxAL_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 9.1V; 40W; unidirectional,double,common anode
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 9.1V
Leakage current: 0.1µA
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
18+23.11 грн
27+14.56 грн
34+11.42 грн
100+5.69 грн
150+4.74 грн
293+3.07 грн
500+2.85 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BUK7M33-60EX BUK7M33-60EX NEXPERIA BUK7M33-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.9nC
Kind of channel: enhancement
Pulsed drain current: 98A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 74mΩ
Type of transistor: N-MOSFET
на замовлення 6644 шт:
термін постачання 21-30 дні (днів)
8+56.94 грн
10+40.23 грн
38+24.06 грн
103+22.76 грн
500+21.92 грн
Мінімальне замовлення: 8
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BUK7M6R3-40EX BUK7M6R3-40EX NEXPERIA BUK7M6R3-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Application: automotive industry
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.1nC
Kind of channel: enhancement
Pulsed drain current: 319A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 56.4A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
на замовлення 1497 шт:
термін постачання 21-30 дні (днів)
6+73.45 грн
10+53.26 грн
23+39.77 грн
62+37.63 грн
200+36.17 грн
Мінімальне замовлення: 6
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BUK765R0-100E,118 BUK765R0-100E,118 NEXPERIA BUK765R0-100E.118-DTE.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 180nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
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BUK763R8-80E,118 BUK763R8-80E,118 NEXPERIA BUK763R8-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 169nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 778A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
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BUK7K52-60EX NEXPERIA BUK7K52-60E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 71A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 12.6A
On-state resistance: 101mΩ
Type of transistor: N-MOSFET x2
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BUK7K134-100EX NEXPERIA BUK7K134-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 39A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 6.9A
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
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BUK7Y7R0-40HX BUK7Y7R0-40HX NEXPERIA BUK7Y7R0-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 272A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 13.6mΩ
Type of transistor: N-MOSFET
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)
7+62.72 грн
8+52.26 грн
22+41.28 грн
60+39.04 грн
500+38.62 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BUK7K15-80EX NEXPERIA BUK7K15-80E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35.1nC
Kind of channel: enhancement
Pulsed drain current: 92A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
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BUK7K18-40EX NEXPERIA BUK7K18-40E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 22A; Idm: 127A; 38W
Application: automotive industry
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 127A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 22A
On-state resistance: 37.4mΩ
Type of transistor: N-MOSFET x2
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BUK7K23-80EX NEXPERIA BUK7K23-80E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET x2
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BUK7K32-100EX NEXPERIA BUK7K32-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 116A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 20.4A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET x2
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BUK7K35-60EX NEXPERIA BUK7K35-60E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 17A; Idm: 95A; 38W
Application: automotive industry
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 95A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 67mΩ
Type of transistor: N-MOSFET x2
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BUK7K45-100EX NEXPERIA BUK7K45-100E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.9nC
Kind of channel: enhancement
Pulsed drain current: 84A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET x2
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BUK7D25-40EX NEXPERIA BUK7D25-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 76A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
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BUK7J1R4-40HX NEXPERIA BUK7J1R4-40H.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Application: automotive industry
Power dissipation: 395W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 103nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 600A
Mounting: SMD
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 40V
Drain current: 190A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
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BUK7Y08-40B,115 NEXPERIA BUK7Y08-40B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Application: automotive industry
Power dissipation: 105W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 332A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 58.85A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
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BUK7880-55A/CUX NEXPERIA BUK7880-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Application: automotive industry
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 5A
On-state resistance: 148mΩ
Type of transistor: N-MOSFET
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BUK7D36-60EX NEXPERIA BUK7D36-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
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BUK7K8R7-40EX NEXPERIA BUK7K8R7-40E.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22.5A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET x2
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BUK753R1-40E,127 NEXPERIA BUK753R1-40E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Case: SOT78; TO220AB
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
Kind of package: tube
Gate charge: 79nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 798A
Mounting: THT
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BUK764R4-60E,118 NEXPERIA BUK764R4-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 82nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 620A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
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BUK766R0-60E,118 NEXPERIA BUK766R0-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 473A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
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BUK7E3R5-60E,127 NEXPERIA BUK7E3R5-60E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
Kind of package: tube
Gate charge: 114nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 785A
Mounting: THT
Case: I2PAK; SOT226
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
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PESD3V6Z1BCSFYL PESD3V6Z1BCSFYL NEXPERIA PESD3V6Z1BCSF.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Version: ESD
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BCP56-10,135 BCP56-10,135 NEXPERIA BCP56-10.115.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 63...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Pulsed collector current: 2A
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74AHCT164D,118 74AHCT164D,118 NEXPERIA 74AHCT164D,118.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...125°C
Case: SO14
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Family: AHCT
Mounting: SMD
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74LVC1G00GM,115 NEXPERIA 74LVC1G00GM,115.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
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74LVC1G00GM,132 NEXPERIA 74LVC1G00GM,132.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
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74LVC1G00GN,132 NEXPERIA 74LVC1G00GN,132.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
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74LVC1G00GS,132 NEXPERIA 74LVC1G00GS,132.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
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BZX84-A2V7-QR BZX84-Q_SER.pdf
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 2.7V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±1%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Application: automotive industry
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BAV20,113 BAV20.pdf
Виробник: NEXPERIA
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 250mA; reel; Ifsm: 9A; SOD27; Ir: 100uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: reel
Max. forward impulse current: 9A
Case: SOD27
Max. forward voltage: 1.25V
Reverse recovery time: 50ns
Power dissipation: 0.4W
Leakage current: 0.1mA
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I74F04D602
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 939 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+62.72 грн
500+50.58 грн
Мінімальне замовлення: 100
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BUK9616-75B,118 BUK9616-75B.pdf
BUK9616-75B,118
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W
Application: automotive industry
Power dissipation: 157W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 270A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 75V
Drain current: 47A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
на замовлення 796 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+104.81 грн
5+88.13 грн
14+67.44 грн
37+63.61 грн
Мінімальне замовлення: 4
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BZX84-C11,215 BZX84_SER.pdf
BZX84-C11,215
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 11V; SMD; reel,tape; SOT23; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Max. load current: 0.2A
Max. forward voltage: 0.9V
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74LVC1G79GW,125 74LVC1G79.pdf
74LVC1G79GW,125
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; TSSOP5
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Trigger: positive-edge-triggered
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74LVC1G79GM,115 74LVC1G79GM,115.pdf
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; XSON6
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Trigger: positive-edge-triggered
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74LVC1G79GM,132 74LVC1G79GM,132.pdf
Виробник: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS,TTL; Mini Logic; SMD; XSON6
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Trigger: positive-edge-triggered
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74LVC1G79GS,132 74LVC1G79.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter; CMOS; SMD; XSON6; Mini Logic; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: inverter
Technology: CMOS
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
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BAT160S-QX BAT160S-Q.pdf
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT223; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT223
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: double series
Application: automotive industry
Kind of package: reel; tape
Max. forward voltage: 0.65V
Max. forward impulse current: 10A
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PSMN1R1-30PL,127 PSMN1R1-30PL.pdf
PSMN1R1-30PL,127
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Case: SOT78; TO220AB
Drain-source voltage: 30V
Drain current: 120A
On-state resistance: 1.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 338W
Polarisation: unipolar
Kind of package: tube
Gate charge: 243nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1609A
Mounting: THT
на замовлення 38 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+323.51 грн
5+224.54 грн
12+212.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PMEG150G20ELRX PMEG150G20ELR.pdf
PMEG150G20ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 2A; 14ns; SOD123W; Ufmax: 0.78V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 14ns
на замовлення 1268 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+19.23 грн
32+12.34 грн
93+9.93 грн
255+9.39 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
PMEG120G10ELRX PMEG120G10ELR.pdf
PMEG120G10ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 1A; 12ns; SOD123W; Ufmax: 0.77V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 12ns
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PMEG150G10ELRX PMEG150G10ELR.pdf
PMEG150G10ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SOD123W; Ufmax: 0.78V
Max. forward impulse current: 50A
Leakage current: 30nA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 150V
Max. forward voltage: 0.78V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
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PMEG120G20ELRX PMEG120G20ELR.pdf
PMEG120G20ELRX
Виробник: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 120V; 2A; 11ns; SOD123W; Ufmax: 0.77V
Max. forward impulse current: 70A
Leakage current: 30nA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: silicon germanium diode (SiGe)
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 120V
Max. forward voltage: 0.77V
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 11ns
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PZU5.6B2L,315 PZUXBL_SER.pdf
PZU5.6B2L,315
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; reel,tape; DFN1006-2,SOD882; Ir: 1uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1.1V
Case: DFN1006-2; SOD882
Max. load current: 0.2A
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 7910 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
34+12.38 грн
48+8.12 грн
70+5.50 грн
100+4.65 грн
297+3.01 грн
816+2.85 грн
5000+2.74 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
NUP1301,215 NUP1301.pdf
NUP1301,215
Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 220W; 4A; unidirectional; SOT23
Type of diode: TVS
Max. off-state voltage: 80V
Semiconductor structure: unidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.1µA
Max. forward impulse current: 4A
Peak pulse power dissipation: 220W
на замовлення 897 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.55 грн
52+7.45 грн
75+6.74 грн
100+6.27 грн
243+3.69 грн
669+3.49 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
74LVC1G14GM,115 74LVC1G14GM,115.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
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74LVC1G14GN,132 74LVC1G14GN,132.pdf
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; inverter,Schmitt trigger; NOT; Ch: 1; IN: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Kind of integrated circuit: inverter; Schmitt trigger
Number of inputs: 1
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74LVC1G14GS,132 74LVC1G14GS,132.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; XSON6; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Delay time: 14ns
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74LVC1G14GX4-Q100Z 74LVC1G14_Q100.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; inverter; NOT; Ch: 1; CMOS; SMD; X2SON4; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Kind of integrated circuit: inverter
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74LVC1G14GX4Z 74LVC1G14GX4Z.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; X2SON4; 1.65÷5.5VDC; 4uA; 14ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: X2SON4
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Quiescent current: 4µA
Kind of input: with Schmitt trigger
Family: LVC
Delay time: 14ns
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74LVC161PW,112 74LVC161.pdf
74LVC161PW,112
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 4bit,asynchronous,binary counter,synchronous; SMD
Type of integrated circuit: digital
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 1.2...3.6V DC
Integrated circuit features: 5V tolerant on inputs/outputs
Technology: CMOS; TTL
Kind of integrated circuit: 4bit; asynchronous; binary counter; synchronous
Family: LVC
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+137.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
74LVC161BQ,115 74LVC161BQ,115.pdf
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Integrated circuit features: 5V tolerant on inputs/outputs
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74LVC161D,118 74LVC161D,118.pdf
74LVC161D,118
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Integrated circuit features: 5V tolerant on inputs/outputs
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74LVC161PW,118 74LVC161PW,118.pdf
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
Integrated circuit features: 5V tolerant on inputs/outputs
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74LVC163BQ,115 74LVC163BQ,115.pdf
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
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74LVC163D,118 74LVC163D,118.pdf
74LVC163D,118
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
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74LVC163PW,118 74LVC163PW,118.pdf
Виробник: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 4bit,binary counter,synchronous; CMOS,TTL; SMD; LVC
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; binary counter; synchronous
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...125°C
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MMBZ9V1AL,215 MMBZxAL_SER.pdf
MMBZ9V1AL,215
+1
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 9.1V; 40W; unidirectional,double,common anode
Case: SOT23
Max. off-state voltage: 6V
Semiconductor structure: common anode; double; unidirectional
Breakdown voltage: 9.1V
Leakage current: 0.1µA
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Mounting: SMD
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.11 грн
27+14.56 грн
34+11.42 грн
100+5.69 грн
150+4.74 грн
293+3.07 грн
500+2.85 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BUK7M33-60EX BUK7M33-60E.pdf
BUK7M33-60EX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
Application: automotive industry
Power dissipation: 44W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.9nC
Kind of channel: enhancement
Pulsed drain current: 98A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 74mΩ
Type of transistor: N-MOSFET
на замовлення 6644 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.94 грн
10+40.23 грн
38+24.06 грн
103+22.76 грн
500+21.92 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BUK7M6R3-40EX BUK7M6R3-40E.pdf
BUK7M6R3-40EX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
Application: automotive industry
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 28.1nC
Kind of channel: enhancement
Pulsed drain current: 319A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 56.4A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
на замовлення 1497 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+73.45 грн
10+53.26 грн
23+39.77 грн
62+37.63 грн
200+36.17 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BUK765R0-100E,118 BUK765R0-100E.118-DTE.PDF
BUK765R0-100E,118
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 115A; 349W; D2PAK,SOT404
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 180nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 100V
Drain current: 115A
On-state resistance: 13.5mΩ
Type of transistor: N-MOSFET
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BUK763R8-80E,118 BUK763R8-80E.pdf
BUK763R8-80E,118
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
Application: automotive industry
Power dissipation: 349W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 169nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 778A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 9.2mΩ
Type of transistor: N-MOSFET
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BUK7K52-60EX BUK7K52-60E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 71A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 12.6A
On-state resistance: 101mΩ
Type of transistor: N-MOSFET x2
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BUK7K134-100EX BUK7K134-100E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.9A; Idm: 39A; 32W
Application: automotive industry
Power dissipation: 32W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 39A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 6.9A
On-state resistance: 335mΩ
Type of transistor: N-MOSFET x2
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BUK7Y7R0-40HX BUK7Y7R0-40H.pdf
BUK7Y7R0-40HX
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 272A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 13.6mΩ
Type of transistor: N-MOSFET
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+62.72 грн
8+52.26 грн
22+41.28 грн
60+39.04 грн
500+38.62 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BUK7K15-80EX BUK7K15-80E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 16A; Idm: 92A; 68W
Application: automotive industry
Power dissipation: 68W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35.1nC
Kind of channel: enhancement
Pulsed drain current: 92A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 80V
Drain current: 16A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET x2
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BUK7K18-40EX BUK7K18-40E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 22A; Idm: 127A; 38W
Application: automotive industry
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 127A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 22A
On-state resistance: 37.4mΩ
Type of transistor: N-MOSFET x2
товару немає в наявності
В кошику  од. на суму  грн.
BUK7K23-80EX BUK7K23-80E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 12A; Idm: 68A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 68A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 80V
Drain current: 12A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET x2
товару немає в наявності
В кошику  од. на суму  грн.
BUK7K32-100EX BUK7K32-100E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 20.4A; Idm: 116A; 64W
Application: automotive industry
Power dissipation: 64W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 116A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 100V
Drain current: 20.4A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET x2
товару немає в наявності
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BUK7K35-60EX BUK7K35-60E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 17A; Idm: 95A; 38W
Application: automotive industry
Power dissipation: 38W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 95A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 60V
Drain current: 17A
On-state resistance: 67mΩ
Type of transistor: N-MOSFET x2
товару немає в наявності
В кошику  од. на суму  грн.
BUK7K45-100EX BUK7K45-100E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 84A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25.9nC
Kind of channel: enhancement
Pulsed drain current: 84A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET x2
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BUK7D25-40EX BUK7D25-40E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 13nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 76A
Mounting: SMD
Case: DFN2020MD-6; SOT1220
Drain-source voltage: 40V
Drain current: 12A
On-state resistance: 46mΩ
Type of transistor: N-MOSFET
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BUK7J1R4-40HX BUK7J1R4-40H.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 190A; Idm: 600A; 395W
Application: automotive industry
Power dissipation: 395W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 103nC
Technology: Trench
Kind of channel: enhancement
Pulsed drain current: 600A
Mounting: SMD
Case: LFPAK56E; PowerSO8; SOT1023
Drain-source voltage: 40V
Drain current: 190A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
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BUK7Y08-40B,115 BUK7Y08-40B.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W
Application: automotive industry
Power dissipation: 105W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36.3nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 332A
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: 40V
Drain current: 58.85A
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
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BUK7880-55A/CUX BUK7880-55A.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
Application: automotive industry
Power dissipation: 8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Mounting: SMD
Case: SC73; SOT223
Drain-source voltage: 55V
Drain current: 5A
On-state resistance: 148mΩ
Type of transistor: N-MOSFET
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BUK7D36-60EX BUK7D36-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 56A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 60V
Drain current: 8.9A
On-state resistance: 76mΩ
Type of transistor: N-MOSFET
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BUK7K8R7-40EX BUK7K8R7-40E.pdf
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 22.5A
Mounting: SMD
Case: LFPAK56D; SOT1205
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET x2
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BUK753R1-40E,127 BUK753R1-40E.pdf
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Case: SOT78; TO220AB
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 5.9mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
Kind of package: tube
Gate charge: 79nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 798A
Mounting: THT
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BUK764R4-60E,118 BUK764R4-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 620A; 234W
Application: automotive industry
Power dissipation: 234W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 82nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 620A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
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BUK766R0-60E,118 BUK766R0-60E.pdf
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 473A; 182W
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 473A
Mounting: SMD
Case: D2PAK; SOT404
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 13mΩ
Type of transistor: N-MOSFET
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BUK7E3R5-60E,127 BUK7E3R5-60E.pdf
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 785A; 293W
Application: automotive industry
Power dissipation: 293W
Polarisation: unipolar
Kind of package: tube
Gate charge: 114nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 785A
Mounting: THT
Case: I2PAK; SOT226
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
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PESD3V6Z1BCSFYL PESD3V6Z1BCSF.pdf
PESD3V6Z1BCSFYL
Виробник: NEXPERIA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 6.8V; bidirectional; DSN0603-2,SOD962-2; ESD
Type of diode: TVS
Max. off-state voltage: 3.6V
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DSN0603-2; SOD962-2
Mounting: SMD
Leakage current: 50nA
Version: ESD
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BCP56-10,135 BCP56-10.115.pdf
BCP56-10,135
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 63...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Pulsed collector current: 2A
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74AHCT164D,118 74AHCT164D,118.pdf
74AHCT164D,118
Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,serial input,parallel out
Operating temperature: -40...125°C
Case: SO14
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: 8bit; parallel out; serial input; shift register
Family: AHCT
Mounting: SMD
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74LVC1G00GM,115 74LVC1G00GM,115.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
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74LVC1G00GM,132 74LVC1G00GM,132.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
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74LVC1G00GN,132 74LVC1G00GN,132.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
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74LVC1G00GS,132 74LVC1G00GS,132.pdf
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Manufacturer series: Mini Logic
Delay time: 10.5ns
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