| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TIP110 | onsemi |
 Description: TRANS NPN DARL 60V 2A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVD6416ANT4G-VF01 | onsemi |
Description: MOSFET N-CH 100V 17A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FDC013P20L | onsemi |
Description: MOSFET P-CH 20V TSOT23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDC013P20L | onsemi |
Description: MOSFET P-CH 20V TSOT23-6 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTMFS5C404NLT3G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C404NLT3G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C404NLTT3G | onsemi |
Description: MOSFET N-CH 40V 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C404NLTT3G | onsemi |
Description: MOSFET N-CH 40V 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C404NLTT1G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C404NLTT1G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT24C64WGE | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
на замовлення 1376 шт: термін постачання 21-31 дні (днів) |
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CAT24C64YGI | onsemi |
Description: IC EEPROM 64KBIT I2C 1MHZ 8MSOP Packaging: Bulk Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 400 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT3606HV4-T2 | onsemi |
Description: IC LED DRVR WHITE BCKLGT 16-TQFN Packaging: Tape & Reel (TR) Package / Case: 16-WQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 6 Frequency: 800kHz ~ 1.3MHz Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 30mA Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (4x4) Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT3606HV4-T2 | onsemi |
Description: IC LED DRVR WHITE BCKLGT 16-TQFN Packaging: Cut Tape (CT) Package / Case: 16-WQFN Exposed Pad Mounting Type: Surface Mount Number of Outputs: 6 Frequency: 800kHz ~ 1.3MHz Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 30mA Topology: Switched Capacitor (Charge Pump) Supplier Device Package: 16-TQFN (4x4) Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C404NLWFET1G | onsemi |
Description: T6-40V N 0.67 MOHMS LL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C404NLWFET1G | onsemi |
Description: T6-40V N 0.67 MOHMS LL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C404NWFET1G | onsemi |
Description: T6-40V N 0.7 MOHMS SL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1731000 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C404NAFT1G | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C404NAFT1G | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C404NWFT1G-M | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C404NWFT3G-K | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C404NWFT1G-K | onsemi |
Description: MOSFET N-CH 40V 53A/378A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LV8402GP-H | onsemi |
Description: IC MOTOR DRIVER 2.8V-5.5V 24VCT Packaging: Tube Package / Case: 24-WFQFN Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.4A Interface: Parallel Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 2.8V ~ 5.5V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 1.5V ~ 15V Supplier Device Package: 24-VCT (3.5x3.5) Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LV8402V-MPB-E | onsemi |
Description: IC MOTOR DRIVER 2.8V-5.5V 16SSOP Packaging: Tube Package / Case: 16-LSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.4A Interface: Parallel Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 2.8V ~ 5.5V Applications: General Purpose Technology: Bi-CMOS Voltage - Load: 1.5V ~ 15V Supplier Device Package: 16-SSOP Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CAT25C128V-1.8-26604T3 | onsemi |
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.8V ~ 6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 80 ns Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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CAT25C128V-1.8-26604 | onsemi |
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.8V ~ 6V Technology: EEPROM Clock Frequency: 5 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Access Time: 80 ns Memory Organization: 16K x 8 DigiKey Programmable: Not Verified |
на замовлення 11423 шт: термін постачання 21-31 дні (днів) |
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SBRV660VCTT4G | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBRV660VCTT4G | onsemi |
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SBR660CTT4G | onsemi |
Description: DIODE SCHOTTKY 60V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM350TG | onsemi |
Description: IC REG LINEAR POS ADJ 3A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Adjustable Mounting Type: Through Hole Current - Output: 3A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 10 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Max): 33V Voltage - Output (Min/Fixed): 1.2V PSRR: 65dB ~ 80dB (120Hz) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4005GP | onsemi |
Description: DIODE STANDARD 600V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDS9431A-F085CT | onsemi |
Description: P-CHANNEL 2.5V SPECIFIED MOSFET, Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR1335CSSC11SMKA0-CR | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SO Packaging: Tray Package / Case: 63-WFBGA, CSPBGA Type: CMOS Voltage - Supply: 1.8V, 2.8V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: 63-ODCSP (6.29x5.69) Frames per Second: 30 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| AR1335HSSC11SMAA0-DPBR | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SO Packaging: Tray Package / Case: 48-LCC Type: CMOS Voltage - Supply: 1.8V, 2.8V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: 48-CLCC (10x10) Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AR1335CSSC11SMKA0-CP1 | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SO Packaging: Bulk Package / Case: 63-WFBGA, CSPBGA Type: CMOS Voltage - Supply: 1.8V, 2.8V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: 63-ODCSP (6.29x5.69) Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AR1335CSSC11SMKA0-CP1 | onsemi |
Description: IMAGE SENSOR 13MP 1/3 CIS SO Packaging: Tray Package / Case: 63-WFBGA, CSPBGA Type: CMOS Voltage - Supply: 1.8V, 2.8V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: 63-ODCSP (6.29x5.69) Frames per Second: 30 |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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| AR1335CSSC32SMD20-HW | onsemi |
Description: IC IMAGE SENSOR 13 MP Packaging: Tray Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AR1335PDSC32SMD10 | onsemi |
Description: IC IMAGE SENSOR 13 MP Packaging: Tray Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AR1335PDSC32SMD20 | onsemi |
Description: IMAGE SENSOR Packaging: Tray Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: Die Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AR1335CSSM11SMKA0-CP1 | onsemi |
Description: 13MP 1/3 CIS SO Packaging: Tray Package / Case: 63-WFBGA, CSPBGA Type: CMOS Voltage - Supply: 1.2V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: 63-ODCSP (6.29x5.69) Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| AR1335CSSM32SMD20 | onsemi |
Description: AR1335CSSM32SMD20 Packaging: Bulk Package / Case: Die Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 1.1µm x 1.1µm Active Pixel Array: 4208H x 3120V Supplier Device Package: Die Frames per Second: 30 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74ACT245SC_NL | onsemi |
Description: IC TXRX NON-INVERT 5.5V 20SOIC Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBV3401LT3G | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 200 mW |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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MMBV3401LT1 | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MMBV3401LT1 | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 200 mW |
на замовлення 44388 шт: термін постачання 21-31 дні (днів) |
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MMBV3401LT1G | onsemi |
Description: RF DIODE PIN 35V 200MW SOT-23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - Single Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 1pF @ 20V, 1MHz Resistance @ If, F: 700mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 200 mW |
на замовлення 399871 шт: термін постачання 21-31 дні (днів) |
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MMBV3401LT3 | onsemi |
Description: DIODE PIN SWITCHING 35V SOT-23 Packaging: Bulk |
на замовлення 580000 шт: термін постачання 21-31 дні (днів) |
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NCP1360BABCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 80kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Supplier Device Package: 6-TSOP Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Voltage - Start Up: 18 V Power (Watts): 20 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP1360BABCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 80kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Supplier Device Package: 6-TSOP Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Voltage - Start Up: 18 V Power (Watts): 20 W |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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NCP1360BACCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 110kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Supplier Device Package: 6-TSOP Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Voltage - Start Up: 18 V Power (Watts): 20 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NCP1360BACCYSNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 110kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V Supplier Device Package: 6-TSOP Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit Voltage - Start Up: 18 V Power (Watts): 20 W |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| S29GL512S11TFB020 | onsemi |
Description: S29GL5512-MB(MBYTE3.0GLFLAMEMORY Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| S29GL512T11DHV013 | onsemi |
Description: S29GL5512-MB(MBYTE3.0GLECLIPFLAM Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| S29GL512T10DHI013 | onsemi |
Description: S29GL5512-MB(MBYTE3.0GLECLIPFLAM Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP152MX280120TCG | onsemi |
Description: IC REG LINEAR 1.2V/2.8V 6XDFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 6-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.2V, 2.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): -, 0.26V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NCP152MX280120TCG | onsemi |
Description: IC REG LINEAR 1.2V/2.8V 6XDFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 6-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.2V, 2.8V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): -, 0.26V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA |
на замовлення 34990 шт: термін постачання 21-31 дні (днів) |
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NCP1523BFCT2G | onsemi |
Description: IC REG BUCK ADJ 600MA 8FLIPCHIP Packaging: Tape & Reel (TR) Package / Case: 8-WFBGA, FCBGA Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 600mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 3MHz Voltage - Input (Max): 5.2V Topology: Buck Supplier Device Package: 8-FlipChip (2.05x1.05) Synchronous Rectifier: Yes Voltage - Output (Max): 3.3V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.9V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP1523FCT2G | onsemi |
Description: IC REG BUCK ADJ 600MA 8FLIPCHIP Packaging: Tape & Reel (TR) Package / Case: 8-WFBGA, FCBGA Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 600mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 3MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 8-FlipChip (2.05x1.05) Synchronous Rectifier: Yes Voltage - Output (Max): 2.3V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.9V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP1523FCT2G | onsemi |
Description: IC REG BUCK ADJ 600MA 8FLIPCHIP Packaging: Cut Tape (CT) Package / Case: 8-WFBGA, FCBGA Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 600mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 3MHz Voltage - Input (Max): 5.5V Topology: Buck Supplier Device Package: 8-FlipChip (2.05x1.05) Synchronous Rectifier: Yes Voltage - Output (Max): 2.3V Voltage - Input (Min): 2.7V Voltage - Output (Min/Fixed): 0.9V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP152MX330180TCG | onsemi |
Description: IC REG LINEAR 1.8V/3.3V 6XDFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 150mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 6-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.8V, 3.3V Control Features: Enable PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.4V @ 150mA, 0.22V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA |
товару немає в наявності |
В кошику од. на суму грн. |
| TIP110 |
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Виробник: onsemi
Description: TRANS NPN DARL 60V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS NPN DARL 60V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
товару немає в наявності
В кошику
од. на суму грн.
| NVD6416ANT4G-VF01 |
Виробник: onsemi
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS5C404NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS5C404NLT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS5C404NLTT3G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
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| NTMFS5C404NLTT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
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| NTMFS5C404NLTT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
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| NTMFS5C404NLTT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Description: MOSFET N-CH 40V 52A/370A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
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| CAT24C64WGE |
|
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 1376 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 781+ | 26.89 грн |
| CAT24C64YGI |
|
Виробник: onsemi
Description: IC EEPROM 64KBIT I2C 1MHZ 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT I2C 1MHZ 8MSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 400 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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| CAT3606HV4-T2 |
|
Виробник: onsemi
Description: IC LED DRVR WHITE BCKLGT 16-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.3MHz
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR WHITE BCKLGT 16-TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.3MHz
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
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| CAT3606HV4-T2 |
|
Виробник: onsemi
Description: IC LED DRVR WHITE BCKLGT 16-TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.3MHz
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR WHITE BCKLGT 16-TQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 6
Frequency: 800kHz ~ 1.3MHz
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (4x4)
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
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| NVMFS5C404NLWFET1G |
|
Виробник: onsemi
Description: T6-40V N 0.67 MOHMS LL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 0.67 MOHMS LL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| NVMFS5C404NLWFET1G |
|
Виробник: onsemi
Description: T6-40V N 0.67 MOHMS LL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 0.67 MOHMS LL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
Rds On (Max) @ Id, Vgs: 0.67mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| NVMFS5C404NWFET1G |
|
Виробник: onsemi
Description: T6-40V N 0.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 0.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.70mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1731000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 412.14 грн |
| 10+ | 332.77 грн |
| 100+ | 269.18 грн |
| 500+ | 224.55 грн |
| NVMFS5C404NAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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| NVMFS5C404NAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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| NVMFS5C404NWFT1G-M |
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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| NVMFS5C404NWFT3G-K |
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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| NVMFS5C404NWFT1G-K |
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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| LV8402GP-H |
Виробник: onsemi
Description: IC MOTOR DRIVER 2.8V-5.5V 24VCT
Packaging: Tube
Package / Case: 24-WFQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 5.5V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 1.5V ~ 15V
Supplier Device Package: 24-VCT (3.5x3.5)
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 2.8V-5.5V 24VCT
Packaging: Tube
Package / Case: 24-WFQFN
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 5.5V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 1.5V ~ 15V
Supplier Device Package: 24-VCT (3.5x3.5)
Motor Type - AC, DC: Brushed DC
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| LV8402V-MPB-E |
Виробник: onsemi
Description: IC MOTOR DRIVER 2.8V-5.5V 16SSOP
Packaging: Tube
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 5.5V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 1.5V ~ 15V
Supplier Device Package: 16-SSOP
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 2.8V-5.5V 16SSOP
Packaging: Tube
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 5.5V
Applications: General Purpose
Technology: Bi-CMOS
Voltage - Load: 1.5V ~ 15V
Supplier Device Package: 16-SSOP
Motor Type - AC, DC: Brushed DC
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| CAT25C128V-1.8-26604T3 |
|
Виробник: onsemi
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 80 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 80 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 11.22 грн |
| CAT25C128V-1.8-26604 |
|
Виробник: onsemi
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 80 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 128KBIT SPI 5MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.8V ~ 6V
Technology: EEPROM
Clock Frequency: 5 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 80 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
на замовлення 11423 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 11.04 грн |
| SBRV660VCTT4G |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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| SBRV660VCTT4G |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE ARRAY SCHOTTKY 60V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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| SBR660CTT4G |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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| LM350TG |
|
Виробник: onsemi
Description: IC REG LINEAR POS ADJ 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 33V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB ~ 80dB (120Hz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR POS ADJ 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Max): 33V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 65dB ~ 80dB (120Hz)
Protection Features: Over Current, Over Temperature
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| 1N4005GP |
|
Виробник: onsemi
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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| FDS9431A-F085CT |
|
Виробник: onsemi
Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
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| AR1335CSSC11SMKA0-CR |
|
Виробник: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 912.82 грн |
| AR1335HSSC11SMAA0-DPBR |
Виробник: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 48-CLCC (10x10)
Frames per Second: 30
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 48-CLCC (10x10)
Frames per Second: 30
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| AR1335CSSC11SMKA0-CP1 |
|
Виробник: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
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| AR1335CSSC11SMKA0-CP1 |
|
Виробник: onsemi
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
Description: IMAGE SENSOR 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 1145.45 грн |
| AR1335CSSC32SMD20-HW |
Виробник: onsemi
Description: IC IMAGE SENSOR 13 MP
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Frames per Second: 30
Description: IC IMAGE SENSOR 13 MP
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Frames per Second: 30
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| AR1335PDSC32SMD10 |
Виробник: onsemi
Description: IC IMAGE SENSOR 13 MP
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Frames per Second: 30
Description: IC IMAGE SENSOR 13 MP
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Frames per Second: 30
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| AR1335PDSC32SMD20 |
Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: Die
Frames per Second: 30
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: Die
Frames per Second: 30
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| AR1335CSSM11SMKA0-CP1 |
Виробник: onsemi
Description: 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.2V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
Description: 13MP 1/3 CIS SO
Packaging: Tray
Package / Case: 63-WFBGA, CSPBGA
Type: CMOS
Voltage - Supply: 1.2V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: 63-ODCSP (6.29x5.69)
Frames per Second: 30
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| AR1335CSSM32SMD20 |
Виробник: onsemi
Description: AR1335CSSM32SMD20
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: Die
Frames per Second: 30
Description: AR1335CSSM32SMD20
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.1µm x 1.1µm
Active Pixel Array: 4208H x 3120V
Supplier Device Package: Die
Frames per Second: 30
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| 74ACT245SC_NL |
|
Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
Description: IC TXRX NON-INVERT 5.5V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOIC
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| MMBV3401LT3G |
|
Виробник: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2427+ | 8.91 грн |
| MMBV3401LT1 |
|
Виробник: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
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| MMBV3401LT1 |
|
Виробник: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
на замовлення 44388 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2427+ | 8.91 грн |
| MMBV3401LT1G |
|
Виробник: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
на замовлення 399871 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1150+ | 19.31 грн |
| MMBV3401LT3 |
|
на замовлення 580000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2427+ | 8.91 грн |
| NCP1360BABCYSNT1G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
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| NCP1360BABCYSNT1G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 80kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.71 грн |
| 10+ | 43.41 грн |
| 25+ | 40.74 грн |
| 100+ | 28.98 грн |
| 250+ | 24.66 грн |
| 500+ | 23.43 грн |
| 1000+ | 17.59 грн |
| NCP1360BACCYSNT1G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 110kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 110kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 18.42 грн |
| NCP1360BACCYSNT1G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 110kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 110kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 28V
Supplier Device Package: 6-TSOP
Fault Protection: Current Limiting, Over Power, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Power (Watts): 20 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.71 грн |
| 10+ | 43.41 грн |
| 25+ | 40.74 грн |
| 100+ | 28.98 грн |
| 250+ | 24.66 грн |
| 500+ | 23.43 грн |
| 1000+ | 17.59 грн |
| NCP152MX280120TCG |
|
Виробник: onsemi
Description: IC REG LINEAR 1.2V/2.8V 6XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 1.2V/2.8V 6XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 18.35 грн |
| 10000+ | 16.99 грн |
| 25000+ | 16.82 грн |
| NCP152MX280120TCG |
|
Виробник: onsemi
Description: IC REG LINEAR 1.2V/2.8V 6XDFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 1.2V/2.8V 6XDFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.2V, 2.8V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
на замовлення 34990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 53.13 грн |
| 10+ | 44.88 грн |
| 25+ | 42.14 грн |
| 100+ | 29.98 грн |
| 250+ | 25.51 грн |
| 500+ | 24.24 грн |
| 1000+ | 18.19 грн |
| 2500+ | 16.94 грн |
| NCP1523BFCT2G |
Виробник: onsemi
Description: IC REG BUCK ADJ 600MA 8FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.2V
Topology: Buck
Supplier Device Package: 8-FlipChip (2.05x1.05)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Description: IC REG BUCK ADJ 600MA 8FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.2V
Topology: Buck
Supplier Device Package: 8-FlipChip (2.05x1.05)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.3V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
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| NCP1523FCT2G |
Виробник: onsemi
Description: IC REG BUCK ADJ 600MA 8FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-FlipChip (2.05x1.05)
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.3V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Description: IC REG BUCK ADJ 600MA 8FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-FlipChip (2.05x1.05)
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.3V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
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| NCP1523FCT2G |
Виробник: onsemi
Description: IC REG BUCK ADJ 600MA 8FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 8-WFBGA, FCBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-FlipChip (2.05x1.05)
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.3V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Description: IC REG BUCK ADJ 600MA 8FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 8-WFBGA, FCBGA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 600mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-FlipChip (2.05x1.05)
Synchronous Rectifier: Yes
Voltage - Output (Max): 2.3V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
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| NCP152MX330180TCG |
|
Виробник: onsemi
Description: IC REG LINEAR 1.8V/3.3V 6XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.4V @ 150mA, 0.22V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Description: IC REG LINEAR 1.8V/3.3V 6XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Control Features: Enable
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.4V @ 150mA, 0.22V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
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