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DSK10C-ET1 DSK10C-ET1 onsemi DSK10.pdf Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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DSK10E-AT1 DSK10E-AT1 onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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DSK10E-BT DSK10E-BT onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
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DSK10E-BT DSK10E-BT onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 3339333 шт:
термін постачання 21-31 дні (днів)
3806+6.81 грн
Мінімальне замовлення: 3806
В кошику  од. на суму  грн.
DSK10E-ET1 DSK10E-ET1 onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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DSK10E-ET1 DSK10E-ET1 onsemi DSK10.pdf Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
3806+6.81 грн
Мінімальне замовлення: 3806
В кошику  од. на суму  грн.
NLV74VHC244DTR2G NLV74VHC244DTR2G onsemi mc74vhc244-d.pdf Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+25.82 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NLV74VHC244DTR2G NLV74VHC244DTR2G onsemi mc74vhc244-d.pdf Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
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NCV4949CPDR2G NCV4949CPDR2G onsemi ncv4949c-d.pdf Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+180.54 грн
10+108.25 грн
25+91.32 грн
100+67.66 грн
250+58.81 грн
500+53.36 грн
1000+47.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NCV4949PDG NCV4949PDG onsemi l4949-d.pdf Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
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NCV4949DWR2G NCV4949DWR2G onsemi l4949-d.pdf Description: IC REG LINEAR 5V 100MA 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
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NCV4949ADR2G NCV4949ADR2G onsemi ncv4949a-d.pdf Description: IC REG LINEAR 5V 100MA 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset Output
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
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TIP29C TIP29C onsemi TIP29%2C30%20A%2CB%2CC_Rev13.pdf Description: TRANS NPN 100V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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1N4454 1N4454 onsemi 1n4454-d.pdf Description: DIODE STANDARD 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 49246 шт:
термін постачання 21-31 дні (днів)
45+7.66 грн
112+2.95 грн
129+2.56 грн
500+1.73 грн
1000+1.39 грн
2000+1.32 грн
5000+0.92 грн
10000+0.70 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
MM74HCT374N MM74HCT374N onsemi mm74hct373-d.pdf Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Number of Bits per Element: 8
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NCP1681BAD2R2G NCP1681BAD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+195.91 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NCP1681BAD2R2G NCP1681BAD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 4456 шт:
термін постачання 21-31 дні (днів)
1+503.29 грн
10+319.99 грн
25+277.08 грн
100+214.52 грн
250+192.18 грн
500+178.43 грн
1000+174.14 грн
В кошику  од. на суму  грн.
NCP1681ABD2R2G NCP1681ABD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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NCP1681ABD2R2G NCP1681ABD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 2269 шт:
термін постачання 21-31 дні (днів)
2+234.19 грн
10+142.69 грн
25+121.07 грн
100+90.65 грн
250+79.36 грн
500+72.42 грн
1000+65.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NCP1681AAD2R2G NCP1681AAD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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NCP1681AAD2R2G NCP1681AAD2R2G onsemi ncp1681-d.pdf Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 1875 шт:
термін постачання 21-31 дні (днів)
2+223.97 грн
10+136.29 грн
25+115.50 грн
100+86.33 грн
250+75.48 грн
500+68.82 грн
1000+62.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMC013P030Z onsemi fdmc013p030z-d.pdf Description: P-CHANNEL POWERTRENCH MOSFET -30
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
194+132.00 грн
Мінімальне замовлення: 194
В кошику  од. на суму  грн.
NVMFWS016N10MCLT1G NVMFWS016N10MCLT1G onsemi nvmfs016n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
на замовлення 7475 шт:
термін постачання 21-31 дні (днів)
3+125.19 грн
10+76.59 грн
100+51.29 грн
500+37.95 грн
Мінімальне замовлення: 3
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NVMFWS2D3P04M8LT1G NVMFWS2D3P04M8LT1G onsemi nvmfs2d3p04m8l-d.pdf Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4172 шт:
термін постачання 21-31 дні (днів)
2+326.16 грн
10+207.15 грн
100+146.53 грн
500+126.60 грн
Мінімальне замовлення: 2
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NVMFWS025P04M8LT1G NVMFWS025P04M8LT1G onsemi nvmfs025p04m8l-d.pdf Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1434 шт:
термін постачання 21-31 дні (днів)
6+67.28 грн
10+52.89 грн
100+41.16 грн
500+32.74 грн
Мінімальне замовлення: 6
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NVMFWS027N10MCLT1G NVMFWS027N10MCLT1G onsemi nvmfs027n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
на замовлення 7020 шт:
термін постачання 21-31 дні (днів)
4+97.08 грн
10+60.11 грн
100+42.96 грн
500+32.04 грн
Мінімальне замовлення: 4
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NVMFS003P03P8ZT1G NVMFS003P03P8ZT1G onsemi nvmfs003p03p8z-d.pdf Description: PFET SO8FL -30V 3MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
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NVMFS003P03P8ZT1G NVMFS003P03P8ZT1G onsemi nvmfs003p03p8z-d.pdf Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)
2+187.35 грн
10+150.32 грн
100+119.63 грн
500+95.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NVMFD5C466NT1G NVMFD5C466NT1G onsemi nvmfd5c466n-d.pdf Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C466NT1G NVMFD5C466NT1G onsemi nvmfd5c466n-d.pdf Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1181 шт:
термін постачання 21-31 дні (днів)
3+135.40 грн
10+101.93 грн
100+73.62 грн
500+60.25 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NVMFS6H818NLWFT1G NVMFS6H818NLWFT1G onsemi nvmfs6h818nl-d.pdf Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+391.74 грн
10+257.74 грн
100+188.26 грн
500+147.44 грн
В кошику  од. на суму  грн.
NVMFS5C406NT1G onsemi nvmfs5c406n-d.pdf Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
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NVMFS5C406NT1G onsemi nvmfs5c406n-d.pdf Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
1+392.59 грн
10+317.28 грн
100+256.69 грн
В кошику  од. на суму  грн.
NVMFS5C468NT1G onsemi nvmfs5c468n-d.pdf Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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NVMFS5C468NT1G onsemi nvmfs5c468n-d.pdf Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
на замовлення 554 шт:
термін постачання 21-31 дні (днів)
4+109.86 грн
10+86.35 грн
100+67.17 грн
500+53.43 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FQPF18N50V2 FQPF18N50V2 onsemi FQP_PF18N50V2.pdf Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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BD237STU BD237STU onsemi BD237-D.pdf Description: TRANS NPN 80V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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BD441STU BD441STU onsemi Description: TRANS NPN 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
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FJP13007H1TU FJP13007H1TU onsemi fjp13007-d.pdf Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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FJP3307DH2TU FJP3307DH2TU onsemi fjp3307d-d.pdf Description: TRANS NPN 400V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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FJP3307DTU FJP3307DTU onsemi fjp3307d-d.pdf Description: TRANS NPN 400V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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NCV8161AMX250TBG NCV8161AMX250TBG onsemi ncv8161-d.pdf Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5000+18.76 грн
10000+16.95 грн
15000+16.39 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NCV8161AMX250TBG NCV8161AMX250TBG onsemi ncv8161-d.pdf Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
5+82.61 грн
10+47.24 грн
25+39.23 грн
100+28.58 грн
250+24.65 грн
500+22.27 грн
1000+19.97 грн
2500+17.92 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2N3704 2N3704 onsemi 2N3704.pdf Description: TRANS NPN 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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FDS6375 FDS6375 onsemi fds6375-d.pdf Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+29.37 грн
5000+26.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDS6375 FDS6375 onsemi fds6375-d.pdf Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
на замовлення 16667 шт:
термін постачання 21-31 дні (днів)
4+93.68 грн
10+60.85 грн
100+42.36 грн
500+31.92 грн
1000+29.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NC7S14P5 NC7S14P5 onsemi nc7s14-d.pdf description Description: IC INVERT SCHMITT 1CH 1IN SC70-5
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NVMFD5C470NLT1G NVMFD5C470NLT1G onsemi nvmfd5c470nl-d.pdf Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
1500+51.31 грн
3000+48.48 грн
4500+47.54 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFD5C470NLT1G NVMFD5C470NLT1G onsemi nvmfd5c470nl-d.pdf Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)
3+126.04 грн
10+88.48 грн
100+68.25 грн
500+55.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NVMFD5C470NLWFT1G NVMFD5C470NLWFT1G onsemi nvmfd5c470nl-d.pdf Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C470NLWFT1G NVMFD5C470NLWFT1G onsemi nvmfd5c470nl-d.pdf Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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FGAF40N60UFTU FGAF40N60UFTU onsemi fgaf40n60uf-d.pdf Description: IGBT 600V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
2+324.46 грн
30+173.01 грн
120+142.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDD6296 FDD6296 onsemi FAIR-S-A0002365557-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 15A/50A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
на замовлення 24388 шт:
термін постачання 21-31 дні (днів)
644+40.03 грн
Мінімальне замовлення: 644
В кошику  од. на суму  грн.
MURF1620CT MURF1620CT onsemi murf1620ct-d.pdf Description: DIODE ARRAY GP 200V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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NV24C08DTVLT3G NV24C08DTVLT3G onsemi nv24c08lv-d.pdf Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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NV24C08DTVLT3G NV24C08DTVLT3G onsemi nv24c08lv-d.pdf Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2813 шт:
термін постачання 21-31 дні (днів)
12+29.81 грн
13+27.31 грн
25+26.67 грн
50+24.50 грн
100+23.97 грн
250+23.27 грн
500+22.37 грн
1000+21.84 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NLV74VHC32DTR2G NLV74VHC32DTR2G onsemi Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+18.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NLV74VHC32DTR2G NLV74VHC32DTR2G onsemi Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
5+79.20 грн
10+46.33 грн
25+38.44 грн
100+27.64 грн
250+23.50 грн
500+20.95 грн
1000+18.50 грн
Мінімальне замовлення: 5
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FDZ1827NZ-P onsemi Description: FDZ18COMMONDRAN-CPOWERTRENMOSFET
Packaging: Tape & Reel (TR)
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ECH8657-TL-H ECH8657-TL-H onsemi ech8657-d.pdf Description: MOSFET 2N-CH 35V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 4801 шт:
термін постачання 21-31 дні (днів)
5+74.94 грн
10+45.35 грн
100+29.60 грн
500+21.43 грн
1000+19.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DSK10C-ET1 DSK10.pdf
DSK10C-ET1
Виробник: onsemi
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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DSK10E-AT1 DSK10.pdf
DSK10E-AT1
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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DSK10E-BT DSK10.pdf
DSK10E-BT
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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DSK10E-BT DSK10.pdf
DSK10E-BT
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 3339333 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3806+6.81 грн
Мінімальне замовлення: 3806
В кошику  од. на суму  грн.
DSK10E-ET1 DSK10.pdf
DSK10E-ET1
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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DSK10E-ET1 DSK10.pdf
DSK10E-ET1
Виробник: onsemi
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: R-1, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3806+6.81 грн
Мінімальне замовлення: 3806
В кошику  од. на суму  грн.
NLV74VHC244DTR2G mc74vhc244-d.pdf
NLV74VHC244DTR2G
Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.82 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NLV74VHC244DTR2G mc74vhc244-d.pdf
NLV74VHC244DTR2G
Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
NCV4949CPDR2G ncv4949c-d.pdf
NCV4949CPDR2G
Виробник: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+180.54 грн
10+108.25 грн
25+91.32 грн
100+67.66 грн
250+58.81 грн
500+53.36 грн
1000+47.99 грн
Мінімальне замовлення: 2
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NCV4949PDG l4949-d.pdf
NCV4949PDG
Виробник: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC-EP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
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NCV4949DWR2G l4949-d.pdf
NCV4949DWR2G
Виробник: onsemi
Description: IC REG LINEAR 5V 100MA 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 20-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
Qualification: AEC-Q100
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NCV4949ADR2G ncv4949a-d.pdf
NCV4949ADR2G
Виробник: onsemi
Description: IC REG LINEAR 5V 100MA 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 260 µA
Voltage - Input (Max): 28V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 5V
Control Features: Reset Output
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Temperature, Short Circuit
Current - Supply (Max): 5 mA
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TIP29C TIP29%2C30%20A%2CB%2CC_Rev13.pdf
TIP29C
Виробник: onsemi
Description: TRANS NPN 100V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 125mA, 1A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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1N4454 1n4454-d.pdf
1N4454
Виробник: onsemi
Description: DIODE STANDARD 50V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 49246 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
45+7.66 грн
112+2.95 грн
129+2.56 грн
500+1.73 грн
1000+1.39 грн
2000+1.32 грн
5000+0.92 грн
10000+0.70 грн
Мінімальне замовлення: 45
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MM74HCT374N mm74hct373-d.pdf
MM74HCT374N
Виробник: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State, Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.2mA, 7.2mA
Trigger Type: Positive Edge
Clock Frequency: 30 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 46ns @ 5V, 150pF
Number of Bits per Element: 8
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NCP1681BAD2R2G ncp1681-d.pdf
NCP1681BAD2R2G
Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+195.91 грн
Мінімальне замовлення: 2500
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NCP1681BAD2R2G ncp1681-d.pdf
NCP1681BAD2R2G
Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 4456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+503.29 грн
10+319.99 грн
25+277.08 грн
100+214.52 грн
250+192.18 грн
500+178.43 грн
1000+174.14 грн
В кошику  од. на суму  грн.
NCP1681ABD2R2G ncp1681-d.pdf
NCP1681ABD2R2G
Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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NCP1681ABD2R2G ncp1681-d.pdf
NCP1681ABD2R2G
Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 95kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 2269 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.19 грн
10+142.69 грн
25+121.07 грн
100+90.65 грн
250+79.36 грн
500+72.42 грн
1000+65.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NCP1681AAD2R2G ncp1681-d.pdf
NCP1681AAD2R2G
Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Tape & Reel (TR)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
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NCP1681AAD2R2G ncp1681-d.pdf
NCP1681AAD2R2G
Виробник: onsemi
Description: TOTEM POLE CONTINUOUS CONDUCTION
Packaging: Cut Tape (CT)
Package / Case: 20-LSOP (0.154", 3.90mm Width), 18 Leads
Mounting Type: Surface Mount
Voltage - Supply: 30V
Frequency - Switching: 65kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 20-SOIC
на замовлення 1875 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+223.97 грн
10+136.29 грн
25+115.50 грн
100+86.33 грн
250+75.48 грн
500+68.82 грн
1000+62.20 грн
Мінімальне замовлення: 2
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FDMC013P030Z fdmc013p030z-d.pdf
Виробник: onsemi
Description: P-CHANNEL POWERTRENCH MOSFET -30
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5785 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
194+132.00 грн
Мінімальне замовлення: 194
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NVMFWS016N10MCLT1G nvmfs016n10mcl-d.pdf
NVMFWS016N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
на замовлення 7475 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.19 грн
10+76.59 грн
100+51.29 грн
500+37.95 грн
Мінімальне замовлення: 3
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NVMFWS2D3P04M8LT1G nvmfs2d3p04m8l-d.pdf
NVMFWS2D3P04M8LT1G
Виробник: onsemi
Description: MV8 P INITIAL PROGRAM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 222A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 205W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 2.7mA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5985 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4172 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+326.16 грн
10+207.15 грн
100+146.53 грн
500+126.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NVMFWS025P04M8LT1G nvmfs025p04m8l-d.pdf
NVMFWS025P04M8LT1G
Виробник: onsemi
Description: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1434 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+67.28 грн
10+52.89 грн
100+41.16 грн
500+32.74 грн
Мінімальне замовлення: 6
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NVMFWS027N10MCLT1G nvmfs027n10mcl-d.pdf
NVMFWS027N10MCLT1G
Виробник: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
на замовлення 7020 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.08 грн
10+60.11 грн
100+42.96 грн
500+32.04 грн
Мінімальне замовлення: 4
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NVMFS003P03P8ZT1G nvmfs003p03p8z-d.pdf
NVMFS003P03P8ZT1G
Виробник: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
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NVMFS003P03P8ZT1G nvmfs003p03p8z-d.pdf
NVMFS003P03P8ZT1G
Виробник: onsemi
Description: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
на замовлення 1476 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.35 грн
10+150.32 грн
100+119.63 грн
500+95.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NVMFD5C466NT1G nvmfd5c466n-d.pdf
NVMFD5C466NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C466NT1G nvmfd5c466n-d.pdf
NVMFD5C466NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1181 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+135.40 грн
10+101.93 грн
100+73.62 грн
500+60.25 грн
Мінімальне замовлення: 3
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NVMFS6H818NLWFT1G nvmfs6h818nl-d.pdf
NVMFS6H818NLWFT1G
Виробник: onsemi
Description: MOSFET N-CH 80V 22A/135A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
Vgs(th) (Max) @ Id: 2V @ 190µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+391.74 грн
10+257.74 грн
100+188.26 грн
500+147.44 грн
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NVMFS5C406NT1G nvmfs5c406n-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
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NVMFS5C406NT1G nvmfs5c406n-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
на замовлення 190 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+392.59 грн
10+317.28 грн
100+256.69 грн
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NVMFS5C468NT1G nvmfs5c468n-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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NVMFS5C468NT1G nvmfs5c468n-d.pdf
Виробник: onsemi
Description: MOSFET N-CH 40V 12A/35A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
на замовлення 554 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+109.86 грн
10+86.35 грн
100+67.17 грн
500+53.43 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FQPF18N50V2 FQP_PF18N50V2.pdf
FQPF18N50V2
Виробник: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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BD237STU BD237-D.pdf
BD237STU
Виробник: onsemi
Description: TRANS NPN 80V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
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BD441STU
BD441STU
Виробник: onsemi
Description: TRANS NPN 80V 4A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
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FJP13007H1TU fjp13007-d.pdf
FJP13007H1TU
Виробник: onsemi
Description: TRANS NPN 400V 8A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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FJP3307DH2TU fjp3307d-d.pdf
FJP3307DH2TU
Виробник: onsemi
Description: TRANS NPN 400V 8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 26 @ 2A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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FJP3307DTU fjp3307d-d.pdf
FJP3307DTU
Виробник: onsemi
Description: TRANS NPN 400V 8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
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NCV8161AMX250TBG ncv8161-d.pdf
NCV8161AMX250TBG
Виробник: onsemi
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+18.76 грн
10000+16.95 грн
15000+16.39 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NCV8161AMX250TBG ncv8161-d.pdf
NCV8161AMX250TBG
Виробник: onsemi
Description: IC REG LINEAR 2.5V 450MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+82.61 грн
10+47.24 грн
25+39.23 грн
100+28.58 грн
250+24.65 грн
500+22.27 грн
1000+19.97 грн
2500+17.92 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
2N3704 2N3704.pdf
2N3704
Виробник: onsemi
Description: TRANS NPN 30V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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FDS6375 fds6375-d.pdf
FDS6375
Виробник: onsemi
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+29.37 грн
5000+26.68 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
FDS6375 fds6375-d.pdf
FDS6375
Виробник: onsemi
Description: MOSFET P-CH 20V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2694 pF @ 10 V
на замовлення 16667 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.68 грн
10+60.85 грн
100+42.36 грн
500+31.92 грн
1000+29.35 грн
Мінімальне замовлення: 4
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NC7S14P5 description nc7s14-d.pdf
NC7S14P5
Виробник: onsemi
Description: IC INVERT SCHMITT 1CH 1IN SC70-5
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NVMFD5C470NLT1G nvmfd5c470nl-d.pdf
NVMFD5C470NLT1G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+51.31 грн
3000+48.48 грн
4500+47.54 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFD5C470NLT1G nvmfd5c470nl-d.pdf
NVMFD5C470NLT1G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.04 грн
10+88.48 грн
100+68.25 грн
500+55.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NVMFD5C470NLWFT1G nvmfd5c470nl-d.pdf
NVMFD5C470NLWFT1G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFD5C470NLWFT1G nvmfd5c470nl-d.pdf
NVMFD5C470NLWFT1G
Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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FGAF40N60UFTU fgaf40n60uf-d.pdf
FGAF40N60UFTU
Виробник: onsemi
Description: IGBT 600V 40A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 470µJ (on), 130µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 77 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 100 W
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+324.46 грн
30+173.01 грн
120+142.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDD6296 FAIR-S-A0002365557-1.pdf?t.download=true&u=5oefqw
FDD6296
Виробник: onsemi
Description: MOSFET N-CH 30V 15A/50A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 15 V
на замовлення 24388 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
644+40.03 грн
Мінімальне замовлення: 644
В кошику  од. на суму  грн.
MURF1620CT murf1620ct-d.pdf
MURF1620CT
Виробник: onsemi
Description: DIODE ARRAY GP 200V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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NV24C08DTVLT3G nv24c08lv-d.pdf
NV24C08DTVLT3G
Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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NV24C08DTVLT3G nv24c08lv-d.pdf
NV24C08DTVLT3G
Виробник: onsemi
Description: IC EEPROM 8KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2813 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.81 грн
13+27.31 грн
25+26.67 грн
50+24.50 грн
100+23.97 грн
250+23.27 грн
500+22.37 грн
1000+21.84 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
NLV74VHC32DTR2G
NLV74VHC32DTR2G
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+18.27 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NLV74VHC32DTR2G
NLV74VHC32DTR2G
Виробник: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 4.4V
Input Logic Level - Low: 0.1V ~ 0.36V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+79.20 грн
10+46.33 грн
25+38.44 грн
100+27.64 грн
250+23.50 грн
500+20.95 грн
1000+18.50 грн
Мінімальне замовлення: 5
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FDZ1827NZ-P
Виробник: onsemi
Description: FDZ18COMMONDRAN-CPOWERTRENMOSFET
Packaging: Tape & Reel (TR)
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ECH8657-TL-H ech8657-d.pdf
ECH8657-TL-H
Виробник: onsemi
Description: MOSFET 2N-CH 35V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 35V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 4801 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.94 грн
10+45.35 грн
100+29.60 грн
500+21.43 грн
1000+19.39 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
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