Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NTBLS002N08MC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 530µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMYS1D6N04CLTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NVMYS1D6N04CLTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMYS1D6N04CLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMYS1D6N04CLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc) Vgs(th) (Max) @ Id: 3V @ 210µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17875 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMYS4D6N04CLTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMYS4D6N04CLTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NTMYS4D6N04CLTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NTMYS4D6N04CLTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 40µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
1N6285ARL4G | onsemi |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SNSR05F40NXT5G | onsemi |
Description: 0402 FC SCHOTTKY DIODES Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NSR05201MX4T5G | onsemi |
Description: 01005_TRENCH_SCHOTTKY_20V Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NSR05201MX4T5G | onsemi |
Description: 01005_TRENCH_SCHOTTKY_20V Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
KA7815AETU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 15V PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NCV68061SNAIT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: N+1 ORing Controller Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3V ~ 32V Applications: General Purpose Internal Switch(s): No FET Type: N-Channel Delay Time - OFF: 200 ns Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP Current - Supply: 215 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NCV68061SNAIT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: N+1 ORing Controller Operating Temperature: -40°C ~ 150°C Voltage - Supply: 3V ~ 32V Applications: General Purpose Internal Switch(s): No FET Type: N-Channel Delay Time - OFF: 200 ns Ratio - Input:Output: 1:1 Supplier Device Package: 6-TSOP Current - Supply: 215 µA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5416 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NL27WZ125USG-F22190 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NL27WZ125USG-F22190 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NLV27WZ125USG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NLV27WZ125USG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: US8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1043 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NC7SZ11P6X-L22347 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-70-6 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NC7SZ11P6X-L22347 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 3 Supplier Device Package: SC-70-6 Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 14104 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
MAX4544EUT-T10 | onsemi |
Description: MAX45LVOLTAGSINGSUPPDUSPANALSWIT Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
NRVBS360BNT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NRVBS360BNT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A Current - Reverse Leakage @ Vr: 30 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 864 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMFWD016N06CT1G | onsemi |
Description: MOSFET 2N-CH 60V 9A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 36W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NLV74VHC50DTR2G | onsemi |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 14-TSSOP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NLV74VHC50DTR2G | onsemi |
Description: IC BUF NON-INVERT 5.5V 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 14-TSSOP Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
P6SMB6.8AT3 | onsemi |
![]() Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
DFB20100 | onsemi |
![]() Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 763 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
NV24C32MUW3VTBG | onsemi |
Description: IC EEPROM 32KBIT I2C 8UDFN Packaging: Bulk Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-UDFN (2x3) Write Cycle Time - Word, Page: 5ms Memory Interface: I²C Access Time: 900 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
на замовлення 38405 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
![]() |
FJP2145TU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V Frequency - Transition: 15MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 800 V Power - Max: 120 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
74LVX14SJ | onsemi |
![]() Packaging: Tube Features: Schmitt Trigger Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 2.2V Input Logic Level - Low: 0.9V Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
MOC217R2VM | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.07V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
MOC217R2VM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.07V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
SC2901DR2G | onsemi |
Description: IC OPAMP 14SOIC Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Current - Supply: 800µA Current - Input Bias: 25 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDS6679AZ-G | onsemi |
Description: FDS6P-CHANNPOWERTRENMOSFET Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
NST4617MX2T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 112MHz Supplier Device Package: 3-X2DFN (1x0.6) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 166 mW |
на замовлення 104000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NST4617MX2T5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 112MHz Supplier Device Package: 3-X2DFN (1x0.6) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 166 mW |
на замовлення 104000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
1N4737ARL | onsemi |
Description: 1N47ZENDIOD7.551W Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
1N4737ATA | onsemi |
Description: 1N47ZENDIOD7.551W Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
FGA20S140P | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Gate Charge: 203.5 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1400 V Current - Collector Pulsed (Icm): 60 A Power - Max: 272 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
FQP9N25C | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NVMFS5C430NLWFAFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NVMFS5C430NLWFAFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 1497 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMFS5C430NWFET1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMFS5C430NWFET1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMFS5C430NLWFET1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NVMFS5C430NLWFET1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NVMFS5C430NWFAFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
NVMFS5C430NWFAFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1480 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NTMFS5C430NLT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NTMFS5C430NLT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NTMFS5C430NT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NTMFS5C430NT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
NVMFS5C430NLWFAFT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
N93C66BT3ETAG | onsemi |
![]() Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 4 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Memory Interface: Microwire Memory Organization: 256 x 16, 512 x 8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
N93C66BT3ETAG | onsemi |
![]() Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 4 MHz Memory Format: EEPROM Supplier Device Package: 8-TDFN (2x3) Memory Interface: Microwire Memory Organization: 256 x 16, 512 x 8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 20690 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
SN74LS684DW | onsemi |
![]() Packaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Output: Active Low Type: Magnitude Comparator Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.85V ~ 5.25V Current - Output High, Low: 400µA, 24mA Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 30ns @ 5V, 45pF Output Function: A=B, A>B Number of Bits: 8 |
на замовлення 8352 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
MC10EP142FAR2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 32-LQFP Output Type: Standard Mounting Type: Surface Mount Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Supplier Device Package: 32-LQFP (7x7) Number of Bits per Element: 9 |
товару немає в наявності |
В кошику од. на суму грн. |
NTBLS002N08MC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
Description: MOSFET N-CH 80V 28A/238A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 238A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 530µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 40 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 650.41 грн |
10+ | 423.00 грн |
25+ | 370.02 грн |
100+ | 291.01 грн |
250+ | 263.40 грн |
500+ | 261.48 грн |
NVMYS1D6N04CLTWG |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NVMYS1D6N04CLTWG |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 100 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 185.95 грн |
10+ | 115.11 грн |
100+ | 78.73 грн |
NVMYS1D6N04CLT1G |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 55.10 грн |
NVMYS1D6N04CLT1G |
![]() |
Виробник: onsemi
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6 40V LL AIZU SINGLE NCH LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 107.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 210µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4301 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17875 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 187.55 грн |
10+ | 115.88 грн |
100+ | 79.26 грн |
500+ | 59.68 грн |
1000+ | 54.96 грн |
NVMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 33.00 грн |
NVMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 79.69 грн |
10+ | 62.86 грн |
100+ | 48.89 грн |
500+ | 38.89 грн |
1000+ | 31.68 грн |
NTMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
NTMYS4D6N04CLTWG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 40V 21A/78A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
KA7815AETU |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
товару немає в наявності
В кошику
од. на суму грн.
NCV68061SNAIT1G |
![]() |
Виробник: onsemi
Description: IDEAL DIODE NMOS DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Current - Supply: 215 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IDEAL DIODE NMOS DRIVER
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Current - Supply: 215 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 28.11 грн |
NCV68061SNAIT1G |
![]() |
Виробник: onsemi
Description: IDEAL DIODE NMOS DRIVER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Current - Supply: 215 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IDEAL DIODE NMOS DRIVER
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: N+1 ORing Controller
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 3V ~ 32V
Applications: General Purpose
Internal Switch(s): No
FET Type: N-Channel
Delay Time - OFF: 200 ns
Ratio - Input:Output: 1:1
Supplier Device Package: 6-TSOP
Current - Supply: 215 µA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5416 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 115.11 грн |
10+ | 67.90 грн |
25+ | 56.83 грн |
100+ | 41.54 грн |
250+ | 35.73 грн |
500+ | 32.16 грн |
1000+ | 28.70 грн |
NL27WZ125USG-F22190 |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
товару немає в наявності
В кошику
од. на суму грн.
NL27WZ125USG-F22190 |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
товару немає в наявності
В кошику
од. на суму грн.
NLV27WZ125USG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
NLV27WZ125USG |
![]() |
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUFFER NON-INVERT 5.5V US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1043 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 66.81 грн |
10+ | 56.66 грн |
25+ | 53.24 грн |
100+ | 37.87 грн |
250+ | 32.23 грн |
500+ | 30.62 грн |
1000+ | 22.99 грн |
NC7SZ11P6X-L22347 |
![]() |
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.14 грн |
6000+ | 6.49 грн |
NC7SZ11P6X-L22347 |
![]() |
Виробник: onsemi
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 1CH 3-INP SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-70-6
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 14104 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.20 грн |
14+ | 23.33 грн |
25+ | 21.02 грн |
100+ | 10.76 грн |
250+ | 10.40 грн |
500+ | 9.32 грн |
1000+ | 7.05 грн |
NRVBS360BNT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 4A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 4A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NRVBS360BNT3G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 4A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 4A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 864 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 78.08 грн |
10+ | 61.16 грн |
100+ | 47.57 грн |
500+ | 37.84 грн |
NVMFWD016N06CT1G |
Виробник: onsemi
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 225.39 грн |
10+ | 140.84 грн |
100+ | 97.68 грн |
500+ | 77.64 грн |
NLV74VHC50DTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 14.80 грн |
NLV74VHC50DTR2G |
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 44.27 грн |
10+ | 36.90 грн |
25+ | 34.42 грн |
100+ | 23.98 грн |
250+ | 20.30 грн |
500+ | 19.38 грн |
1000+ | 14.07 грн |
DFB20100 |
![]() |
Виробник: onsemi
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: BRIDGE RECT 1PHASE 1KV 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 763 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 283.34 грн |
15+ | 166.60 грн |
105+ | 123.97 грн |
510+ | 97.97 грн |
NV24C32MUW3VTBG |
Виробник: onsemi
Description: IC EEPROM 32KBIT I2C 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I²C
Access Time: 900 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
на замовлення 38405 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
550+ | 44.27 грн |
FJP2145TU |
![]() |
Виробник: onsemi
Description: TRANS NPN 800V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 120 W
Description: TRANS NPN 800V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 120 W
товару немає в наявності
В кошику
од. на суму грн.
74LVX14SJ |
![]() |
Виробник: onsemi
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Packaging: Tube
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V
Input Logic Level - Low: 0.9V
Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERT SCHMITT 6CH 1INP 14SOP
Packaging: Tube
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V
Input Logic Level - Low: 0.9V
Max Propagation Delay @ V, Max CL: 14.1ns @ 3.3V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
товару немає в наявності
В кошику
од. на суму грн.
MOC217R2VM |
![]() |
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 17.94 грн |
5000+ | 16.66 грн |
12500+ | 16.41 грн |
MOC217R2VM |
![]() |
Виробник: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.07V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.15 грн |
10+ | 35.81 грн |
100+ | 23.45 грн |
1000+ | 17.37 грн |
SC2901DR2G |
Виробник: onsemi
Description: IC OPAMP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Current - Supply: 800µA
Current - Input Bias: 25 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Description: IC OPAMP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Current - Supply: 800µA
Current - Input Bias: 25 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
товару немає в наявності
В кошику
од. на суму грн.
NST4617MX2T5G |
![]() |
Виробник: onsemi
Description: SS SOT883 GP XSTR 120V
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
Description: SS SOT883 GP XSTR 120V
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 4.26 грн |
16000+ | 3.54 грн |
24000+ | 3.48 грн |
56000+ | 2.70 грн |
NST4617MX2T5G |
![]() |
Виробник: onsemi
Description: SS SOT883 GP XSTR 120V
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
Description: SS SOT883 GP XSTR 120V
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 112MHz
Supplier Device Package: 3-X2DFN (1x0.6)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 166 mW
на замовлення 104000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 24.95 грн |
19+ | 16.67 грн |
100+ | 8.42 грн |
500+ | 6.44 грн |
1000+ | 4.78 грн |
2000+ | 4.02 грн |
FGA20S140P |
![]() |
Виробник: onsemi
Description: IGBT TRENCH/FS 1400V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 203.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 272 W
Description: IGBT TRENCH/FS 1400V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 203.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1400 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 272 W
товару немає в наявності
В кошику
од. на суму грн.
FQP9N25C |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Description: MOSFET N-CH 250V 8.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.4A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
NVMFS5C430NLWFAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NVMFS5C430NLWFAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1497 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 164.21 грн |
10+ | 115.81 грн |
100+ | 89.31 грн |
500+ | 79.29 грн |
NVMFS5C430NWFET1G |
![]() |
Виробник: onsemi
Description: T6-40V N 1.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
Description: T6-40V N 1.7 MOHMS SL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 81.84 грн |
NVMFS5C430NWFET1G |
![]() |
Виробник: onsemi
Description: T6-40V N 1.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 1.7 MOHMS SL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 249.54 грн |
10+ | 156.81 грн |
100+ | 109.05 грн |
500+ | 83.19 грн |
NVMFS5C430NLWFET1G |
![]() |
Виробник: onsemi
Description: T6-40V N 1.4 MOHMS LL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 1.4 MOHMS LL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NVMFS5C430NLWFET1G |
![]() |
Виробник: onsemi
Description: T6-40V N 1.4 MOHMS LL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6-40V N 1.4 MOHMS LL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NVMFS5C430NWFAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
NVMFS5C430NWFAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1480 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 241.49 грн |
10+ | 155.88 грн |
100+ | 111.26 грн |
500+ | 87.49 грн |
NTMFS5C430NLT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Description: MOSFET N-CH 40V 200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 115.59 грн |
NTMFS5C430NLT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Description: MOSFET N-CH 40V 200A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 332.45 грн |
10+ | 210.99 грн |
100+ | 148.96 грн |
500+ | 114.96 грн |
1000+ | 106.99 грн |
2000+ | 104.46 грн |
NTMFS5C430NT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 132.93 грн |
NTMFS5C430NT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 40V 35A/185A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 284.15 грн |
NVMFS5C430NLWFAFT3G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
N93C66BT3ETAG |
![]() |
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Memory Interface: Microwire
Memory Organization: 256 x 16, 512 x 8
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Memory Interface: Microwire
Memory Organization: 256 x 16, 512 x 8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.00 грн |
6000+ | 17.84 грн |
9000+ | 17.58 грн |
15000+ | 16.20 грн |
N93C66BT3ETAG |
![]() |
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Memory Interface: Microwire
Memory Organization: 256 x 16, 512 x 8
Grade: Automotive
Qualification: AEC-Q100
Description: IC EEPROM 4KBIT MICROWIRE 8TDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 4 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TDFN (2x3)
Memory Interface: Microwire
Memory Organization: 256 x 16, 512 x 8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 20690 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 50.71 грн |
10+ | 45.97 грн |
25+ | 44.71 грн |
50+ | 41.06 грн |
100+ | 40.15 грн |
250+ | 38.94 грн |
500+ | 37.41 грн |
1000+ | 36.51 грн |
SN74LS684DW |
![]() |
Виробник: onsemi
Description: IC COMPARATOR MAG 8BIT 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Output: Active Low
Type: Magnitude Comparator
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.85V ~ 5.25V
Current - Output High, Low: 400µA, 24mA
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 30ns @ 5V, 45pF
Output Function: A=B, A>B
Number of Bits: 8
Description: IC COMPARATOR MAG 8BIT 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Output: Active Low
Type: Magnitude Comparator
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.85V ~ 5.25V
Current - Output High, Low: 400µA, 24mA
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 30ns @ 5V, 45pF
Output Function: A=B, A>B
Number of Bits: 8
на замовлення 8352 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
63+ | 363.28 грн |
MC10EP142FAR2 |
![]() |
Виробник: onsemi
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Standard
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
Description: IC SHIFT REGISTR 9BIT ECL 32LQFP
Packaging: Tape & Reel (TR)
Package / Case: 32-LQFP
Output Type: Standard
Mounting Type: Surface Mount
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Supplier Device Package: 32-LQFP (7x7)
Number of Bits per Element: 9
товару немає в наявності
В кошику
од. на суму грн.