Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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74VHC245MTCX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74VHC245MTCX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP |
на замовлення 3868 шт: термін постачання 21-31 дні (днів) |
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KSH44H11TF | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSH44H11TF | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KA78L08AZBU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5.5 mA Voltage - Input (Max): 30V Number of Regulators: 1 Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 8V PSRR: 70dB (120Hz) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KA7818ETU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 18V PSRR: 69dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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6N135M | onsemi |
![]() Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 7% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-DIP Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 230ns, 450ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
на замовлення 9574 шт: термін постачання 21-31 дні (днів) |
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NCV8154MW300300TBG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA, 300mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 3V, 3V Control Features: Enable Grade: Automotive PSRR: 75dB (1kHz) Voltage Dropout (Max): -, - Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA Qualification: AEC-Q100 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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NCV8154MW300300TBG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA, 300mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 10-DFN (3x3) Voltage - Output (Min/Fixed): 3V, 3V Control Features: Enable Grade: Automotive PSRR: 75dB (1kHz) Voltage Dropout (Max): -, - Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA Qualification: AEC-Q100 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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LM324AMX | onsemi |
![]() ![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 1.5mA Gain Bandwidth Product: 1 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 1.5 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LM324AMX | onsemi |
![]() ![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: 0°C ~ 70°C Current - Supply: 1.5mA Gain Bandwidth Product: 1 MHz Current - Input Bias: 40 nA Voltage - Input Offset: 1.5 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N6715 | onsemi |
Description: TRANS NPN 40V 2A TO92-3 Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Frequency - Transition: 500MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
2N6725 | onsemi |
Description: TRANS NPN DARL 50V 1A TO237 Packaging: Bulk Package / Case: TO-237AA Mounting Type: Through Hole Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V Supplier Device Package: TO-237 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2N6727 | onsemi |
Description: TRANS PNP 40V 2A TO237 Packaging: Bulk Package / Case: TO-237AA Mounting Type: Through Hole Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V Frequency - Transition: 500MHz Supplier Device Package: TO-237 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2N6714 | onsemi |
Description: TRANS NPN 30V 2A TO237 Packaging: Bulk Package / Case: TO-237AA Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-237 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2N6726 | onsemi |
Description: TRANS PNP 30V 2A TO237 Packaging: Bulk Package / Case: TO-237AA Mounting Type: Through Hole Transistor Type: PNP Supplier Device Package: TO-237 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
2N6724 | onsemi |
Description: TRANS NPN DARL 40V 1A TO237 Packaging: Bulk Package / Case: TO-237AA Mounting Type: Through Hole Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V Supplier Device Package: TO-237 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDN340P | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDN340P | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V |
на замовлення 15487 шт: термін постачання 21-31 дні (днів) |
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2N4125BU | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N4125TFR | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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KSC945CGTA | onsemi |
![]() Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N7002VA | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N7002VA | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563F |
на замовлення 1482 шт: термін постачання 21-31 дні (днів) |
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FOD3120SV | onsemi |
![]() Packaging: Tube Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: IEC, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 795 шт: термін постачання 21-31 дні (днів) |
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FOD3120S | onsemi |
![]() Packaging: Tube Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 126 шт: термін постачання 21-31 дні (днів) |
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FOD3120TSR2 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFS4936NCT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V Power Dissipation (Max): 920mW (Ta), 43W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3044 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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HCPL0452 | onsemi |
![]() Packaging: Box Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 450ns, 300ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS6H824NWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1483500 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H824NWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Power Dissipation (Max): 3.8W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1483765 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H801NWFT3G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS6H801NWFT3G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFS5C442NLWFAFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C442NLWFAFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5265 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C450NWFAFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 65µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C450NWFAFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 65µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C670NWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
CAT28C17AK20 | onsemi |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 10ms Access Time: 200 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 520 шт: термін постачання 21-31 дні (днів) |
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CAT28C17AW20 | onsemi |
![]() Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: EEPROM Memory Format: EEPROM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 10ms Access Time: 200 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 135 шт: термін постачання 21-31 дні (днів) |
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MM74HC573SJ | onsemi |
![]() Packaging: Tube Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Independent Circuits: 1 Current - Output High, Low: 7.8mA, 7.8mA Delay Time - Propagation: 15ns Supplier Device Package: 20-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74VHC4040M | onsemi |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -40°C ~ 85°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 16-SOIC Voltage - Supply: 2 V ~ 5.5 V Count Rate: 210 MHz Number of Bits per Element: 12 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SMA8.0AT3G | onsemi |
![]() Packaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1035pF @ 1MHz Current - Peak Pulse (10/1000µs): 29.4A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.89V Voltage - Clamping (Max) @ Ipp: 13.6V Power - Peak Pulse: 400W Power Line Protection: No |
на замовлення 3375 шт: термін постачання 21-31 дні (днів) |
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FGPF4565 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.88V @ 15V, 30A Supplier Device Package: TO-220F-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 11.2ns/40.8ns Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 40.3 nC Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 170 A Power - Max: 30 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBT35200MT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSOP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 625 mW |
на замовлення 144000 шт: термін постачання 21-31 дні (днів) |
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MBT35200MT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V Frequency - Transition: 100MHz Supplier Device Package: 6-TSOP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 625 mW |
на замовлення 146906 шт: термін постачання 21-31 дні (днів) |
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NOIV1SN2000-QDC | onsemi |
Description: IC IMAGE SENSOR Packaging: Tray Package / Case: 52-LCC Type: CMOS Operating Temperature: 0°C ~ 70°C (TJ) Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V Pixel Size: 4.8µm x 4.8µm Active Pixel Array: 1920H x 1080V Supplier Device Package: 52-PLCC Frames per Second: 23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NSV60101DMR6T2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: SC-74 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NLVLVX8053DTR2G | onsemi |
Description: IC SWITCH SPDT X 3 25OHM Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 85°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 120MHz Voltage - Supply, Single (V+): 2.5V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 8Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 3 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLVLVX8053DTR2G | onsemi |
Description: IC SWITCH SPDT X 3 25OHM Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 85°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 120MHz Voltage - Supply, Single (V+): 2.5V ~ 6V Crosstalk: -60dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 8Ohm Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 100nA Grade: Automotive Number of Circuits: 3 Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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NVMD4N03R2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NVMD4N03R2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV4254CPDAJR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-SOIC-EP Voltage - Output (Max): 40V Voltage - Output (Min/Fixed): 1V Control Features: Enable PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Current Limit Current - Supply (Max): 2 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NCV4254CPDAJR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 70mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 80 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: 8-SOIC-EP Voltage - Output (Max): 40V Voltage - Output (Min/Fixed): 1V Control Features: Enable PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.4V @ 70mA Protection Features: Current Limit Current - Supply (Max): 2 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NLV14069UBDR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 8.8mA, 8.8mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 4V ~ 12.5V Input Logic Level - Low: 1V ~ 2.5V Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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NLV14069UBDR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 8.8mA, 8.8mA Number of Inputs: 1 Supplier Device Package: 14-SOIC Input Logic Level - High: 4V ~ 12.5V Input Logic Level - Low: 1V ~ 2.5V Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
на замовлення 19997 шт: термін постачання 21-31 дні (днів) |
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MC74AC04DTR2G-Q | onsemi |
Description: IC INVERTER 6CH 6-INP 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 6 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SL74AC04DTR2G | onsemi |
Description: SL74AC04DTR2G Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMBTA14 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBTA14 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 350 mW |
товару немає в наявності |
В кошику од. на суму грн. |
74VHC245MTCX |
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Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 23.96 грн |
74VHC245MTCX |
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Виробник: onsemi
Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Description: IC TXRX NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
на замовлення 3868 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 52.01 грн |
10+ | 35.58 грн |
25+ | 31.96 грн |
100+ | 26.30 грн |
250+ | 24.53 грн |
500+ | 23.46 грн |
1000+ | 22.81 грн |
KSH44H11TF |
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Виробник: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
товару немає в наявності
В кошику
од. на суму грн.
KSH44H11TF |
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Виробник: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
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KA78L08AZBU |
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Виробник: onsemi
Description: IC REG LINEAR 8V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 8V
PSRR: 70dB (120Hz)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 8V 100MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5.5 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 8V
PSRR: 70dB (120Hz)
Protection Features: Over Temperature, Short Circuit
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KA7818ETU |
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Виробник: onsemi
Description: IC REG LINEAR 18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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6N135M |
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Виробник: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 230ns, 450ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 230ns, 450ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
на замовлення 9574 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 138.17 грн |
50+ | 67.45 грн |
100+ | 61.77 грн |
500+ | 48.99 грн |
1000+ | 46.24 грн |
2000+ | 43.98 грн |
5000+ | 40.92 грн |
NCV8154MW300300TBG |
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Виробник: onsemi
Description: IC REG LINEAR 3/3V 300MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 3V, 3V
Control Features: Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, -
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3/3V 300MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 3V, 3V
Control Features: Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, -
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 24.61 грн |
6000+ | 21.88 грн |
9000+ | 20.96 грн |
15000+ | 19.32 грн |
NCV8154MW300300TBG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 3/3V 300MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 3V, 3V
Control Features: Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, -
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
Description: IC REG LINEAR 3/3V 300MA 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 10-DFN (3x3)
Voltage - Output (Min/Fixed): 3V, 3V
Control Features: Enable
Grade: Automotive
PSRR: 75dB (1kHz)
Voltage Dropout (Max): -, -
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Qualification: AEC-Q100
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 102.46 грн |
10+ | 60.62 грн |
25+ | 50.59 грн |
100+ | 36.81 грн |
250+ | 31.57 грн |
500+ | 28.35 грн |
1000+ | 25.23 грн |
LM324AMX | ![]() |
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Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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LM324AMX | ![]() |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 40 nA
Voltage - Input Offset: 1.5 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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2N6715 |
Виробник: onsemi
Description: TRANS NPN 40V 2A TO92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS NPN 40V 2A TO92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N6725 |
Виробник: onsemi
Description: TRANS NPN DARL 50V 1A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN DARL 50V 1A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
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2N6727 |
Виробник: onsemi
Description: TRANS PNP 40V 2A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS PNP 40V 2A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Frequency - Transition: 500MHz
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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2N6714 |
Виробник: onsemi
Description: TRANS NPN 30V 2A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS NPN 30V 2A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
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2N6726 |
Виробник: onsemi
Description: TRANS PNP 30V 2A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Description: TRANS PNP 30V 2A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
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2N6724 |
Виробник: onsemi
Description: TRANS NPN DARL 40V 1A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Description: TRANS NPN DARL 40V 1A TO237
Packaging: Bulk
Package / Case: TO-237AA
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Supplier Device Package: TO-237
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
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FDN340P |
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Виробник: onsemi
Description: MOSFET P-CH 20V 2A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
Description: MOSFET P-CH 20V 2A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 8.95 грн |
6000+ | 8.04 грн |
9000+ | 7.31 грн |
15000+ | 6.73 грн |
FDN340P |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
Description: MOSFET P-CH 20V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 10 V
на замовлення 15487 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 38.81 грн |
13+ | 24.14 грн |
100+ | 16.15 грн |
500+ | 11.51 грн |
1000+ | 10.12 грн |
2N4125BU |
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Виробник: onsemi
Description: TRANS PNP 30V 0.2A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.2A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N4125TFR |
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Виробник: onsemi
Description: TRANS PNP 30V 0.2A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Description: TRANS PNP 30V 0.2A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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KSC945CGTA |
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Виробник: onsemi
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
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2N7002VA |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
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2N7002VA |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
на замовлення 1482 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 86.94 грн |
10+ | 52.70 грн |
100+ | 34.65 грн |
500+ | 25.26 грн |
1000+ | 22.92 грн |
FOD3120SV |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 795 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 151.37 грн |
50+ | 74.48 грн |
100+ | 68.34 грн |
500+ | 54.46 грн |
FOD3120S |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 126 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 151.37 грн |
50+ | 74.48 грн |
100+ | 68.34 грн |
FOD3120TSR2 |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
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NTMFS4936NCT1G |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11.6A/79A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 920mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3044 pF @ 15 V
Description: MOSFET N-CH 30V 11.6A/79A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 30A, 10V
Power Dissipation (Max): 920mW (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3044 pF @ 15 V
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HCPL0452 |
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Виробник: onsemi
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Box
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: OPTOCOUPLER SGL TRANS OUT 8-SOIC
Packaging: Box
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 450ns, 300ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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NVMFS6H824NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1483500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 54.70 грн |
3000+ | 49.72 грн |
NVMFS6H824NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 19A/103A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1483765 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 176.98 грн |
10+ | 109.28 грн |
100+ | 74.68 грн |
500+ | 56.18 грн |
NVMFS6H801NWFT3G |
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Виробник: onsemi
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Description: TRENCH 8 80V NFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
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NVMFS6H801NWFT3G |
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Виробник: onsemi
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Description: TRENCH 8 80V NFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
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NVMFS5C442NLWFAFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 29A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 29A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 69.37 грн |
3000+ | 65.57 грн |
NVMFS5C442NLWFAFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 29A/130A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 29A/130A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5265 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 215.80 грн |
10+ | 134.85 грн |
100+ | 93.25 грн |
500+ | 70.80 грн |
NVMFS5C450NWFAFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 24A/102A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 24A/102A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 70.72 грн |
3000+ | 67.05 грн |
NVMFS5C450NWFAFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 40V 24A/102A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 24A/102A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 16500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 219.68 грн |
10+ | 137.24 грн |
100+ | 94.93 грн |
500+ | 72.14 грн |
NVMFS5C670NWFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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CAT28C17AK20 |
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Виробник: onsemi
Description: IC EEPROM 16KBIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 10ms
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 520 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
77+ | 293.42 грн |
CAT28C17AW20 |
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Виробник: onsemi
Description: IC EEPROM 16KBIT 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT 28SOIC
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Access Time: 200 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 135 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
77+ | 293.42 грн |
MM74HC573SJ |
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Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 15ns
Supplier Device Package: 20-SOP
Description: IC D-TYPE TRANSP SGL 8:8 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 7.8mA, 7.8mA
Delay Time - Propagation: 15ns
Supplier Device Package: 20-SOP
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74VHC4040M |
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Виробник: onsemi
Description: IC BINARY COUNTER 12-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 12
Description: IC BINARY COUNTER 12-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 12
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1SMA8.0AT3G |
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Виробник: onsemi
Description: TVS DIODE 8VWM 13.6VC SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1035pF @ 1MHz
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 8VWM 13.6VC SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1035pF @ 1MHz
Current - Peak Pulse (10/1000µs): 29.4A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.89V
Voltage - Clamping (Max) @ Ipp: 13.6V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 3375 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3375+ | 6.70 грн |
FGPF4565 |
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Виробник: onsemi
Description: IGBT TRENCH/FS 650V TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.88V @ 15V, 30A
Supplier Device Package: TO-220F-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 11.2ns/40.8ns
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 40.3 nC
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 30 W
Description: IGBT TRENCH/FS 650V TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.88V @ 15V, 30A
Supplier Device Package: TO-220F-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 11.2ns/40.8ns
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 40.3 nC
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 170 A
Power - Max: 30 W
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MBT35200MT1G |
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Виробник: onsemi
Description: TRANS PNP 35V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
Description: TRANS PNP 35V 2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
на замовлення 144000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 11.16 грн |
6000+ | 10.20 грн |
9000+ | 9.47 грн |
30000+ | 8.69 грн |
75000+ | 8.47 грн |
MBT35200MT1G |
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Виробник: onsemi
Description: TRANS PNP 35V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
Description: TRANS PNP 35V 2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 310mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 1.5V
Frequency - Transition: 100MHz
Supplier Device Package: 6-TSOP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 625 mW
на замовлення 146906 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 33.38 грн |
11+ | 27.21 грн |
100+ | 18.95 грн |
500+ | 13.88 грн |
1000+ | 11.29 грн |
NOIV1SN2000-QDC |
Виробник: onsemi
Description: IC IMAGE SENSOR
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Operating Temperature: 0°C ~ 70°C (TJ)
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 52-PLCC
Frames per Second: 23
Description: IC IMAGE SENSOR
Packaging: Tray
Package / Case: 52-LCC
Type: CMOS
Operating Temperature: 0°C ~ 70°C (TJ)
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1920H x 1080V
Supplier Device Package: 52-PLCC
Frames per Second: 23
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NSV60101DMR6T2G |
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Виробник: onsemi
Description: 60V 1A DUAL NPN LOW VCE(SAT) IN
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SC-74
Grade: Automotive
Qualification: AEC-Q101
Description: 60V 1A DUAL NPN LOW VCE(SAT) IN
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SC-74
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 34.93 грн |
12+ | 26.39 грн |
100+ | 15.82 грн |
500+ | 13.76 грн |
1000+ | 9.35 грн |
NLVLVX8053DTR2G |
Виробник: onsemi
Description: IC SWITCH SPDT X 3 25OHM
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 120MHz
Voltage - Supply, Single (V+): 2.5V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 8Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Grade: Automotive
Qualification: AEC-Q100
Description: IC SWITCH SPDT X 3 25OHM
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 120MHz
Voltage - Supply, Single (V+): 2.5V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 8Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 33.86 грн |
NLVLVX8053DTR2G |
Виробник: onsemi
Description: IC SWITCH SPDT X 3 25OHM
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 120MHz
Voltage - Supply, Single (V+): 2.5V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 8Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 3
Qualification: AEC-Q100
Description: IC SWITCH SPDT X 3 25OHM
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 85°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 120MHz
Voltage - Supply, Single (V+): 2.5V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 8Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 3
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
NVMD4N03R2G |
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Виробник: onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 39.72 грн |
NVMD4N03R2G |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.48 грн |
10+ | 75.65 грн |
100+ | 58.84 грн |
500+ | 46.81 грн |
1000+ | 38.13 грн |
NCV4254CPDAJR2G |
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Виробник: onsemi
Description: IC REG LINEAR POS ADJ 70MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Current Limit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Current Limit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 44.87 грн |
NCV4254CPDAJR2G |
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Виробник: onsemi
Description: IC REG LINEAR POS ADJ 70MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Current Limit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR POS ADJ 70MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: 8-SOIC-EP
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Current Limit
Current - Supply (Max): 2 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 111.00 грн |
10+ | 95.83 грн |
25+ | 90.96 грн |
100+ | 65.55 грн |
250+ | 57.93 грн |
500+ | 54.88 грн |
1000+ | 41.98 грн |
NLV14069UBDR2G |
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Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 4V ~ 12.5V
Input Logic Level - Low: 1V ~ 2.5V
Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 4V ~ 12.5V
Input Logic Level - Low: 1V ~ 2.5V
Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 13.85 грн |
5000+ | 12.17 грн |
7500+ | 11.57 грн |
12500+ | 10.24 грн |
17500+ | 9.87 грн |
NLV14069UBDR2G |
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Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 4V ~ 12.5V
Input Logic Level - Low: 1V ~ 2.5V
Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 8.8mA, 8.8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 4V ~ 12.5V
Input Logic Level - Low: 1V ~ 2.5V
Max Propagation Delay @ V, Max CL: 55ns @ 15V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
на замовлення 19997 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.94 грн |
16+ | 18.99 грн |
25+ | 16.92 грн |
100+ | 13.74 грн |
250+ | 12.73 грн |
500+ | 12.11 грн |
1000+ | 11.42 грн |
MC74AC04DTR2G-Q |
Виробник: onsemi
Description: IC INVERTER 6CH 6-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INVERTER 6CH 6-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
товару немає в наявності
В кошику
од. на суму грн.
MMBTA14 |
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Виробник: onsemi
Description: TRANS NPN DARL 30V 1.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN DARL 30V 1.2A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
товару немає в наявності
В кошику
од. на суму грн.
MMBTA14 |
![]() |
Виробник: onsemi
Description: TRANS NPN DARL 30V 1.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
Description: TRANS NPN DARL 30V 1.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 350 mW
товару немає в наявності
В кошику
од. на суму грн.