| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FFSB0665A | onsemi |
Description: DIODE SIL CARBIDE 650V 9A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 361pF @ 1V, 100kHz Current - Average Rectified (Io): 9A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 786 шт: термін постачання 21-31 дні (днів) |
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FFSP0865A | onsemi |
Description: DIODE SIL CARB 650V 13A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 463pF @ 1V, 100kHz Current - Average Rectified (Io): 13A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
на замовлення 66355 шт: термін постачання 21-31 дні (днів) |
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MM3Z10VT1 | onsemi |
Description: DIODE ZENER 10V 200MW SOD-323Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-323 Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS4C308NWFT1G | onsemi |
Description: TRENCH 30V NCHPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 30.6W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS6H858NWFT1G | onsemi |
Description: MOSFET N-CH 80V 8.4A/29A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS6H858NWFT1G | onsemi |
Description: MOSFET N-CH 80V 8.4A/29A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 30µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H801NLWFT1G | onsemi |
Description: MOSFET N-CH 80V 24A/160A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C646NLWFAFT1G | onsemi |
Description: MOSFET N-CH 60V 20A/93A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C646NLWFAFT1G | onsemi |
Description: MOSFET N-CH 60V 20A/93A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 3.7W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2975 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H801NWFT1G | onsemi |
Description: MOSFET N-CH 80V 23A/157A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NVMFS6H801NWFT1G | onsemi |
Description: MOSFET N-CH 80V 23A/157A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 13480 шт: термін постачання 21-31 дні (днів) |
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NC7SZ32M5X-L22090 | onsemi |
Description: IC GATE OR 1CH 2-INP SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7S04M5X-L22090 | onsemi |
Description: IC INVERTER 1CH 1-INP SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 1 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7S86M5X-L22090 | onsemi |
Description: IC GATE XOR 1CH 2-INP SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: SOT-23-5 Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MOC3021SM | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-SMD Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 15mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 16054 шт: термін постачання 21-31 дні (днів) |
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LM2902MX | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Gain Bandwidth Product: 1 MHz Current - Input Bias: 90 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2902MX | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Gain Bandwidth Product: 1 MHz Current - Input Bias: 90 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 30 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM2902M | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14SOPPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 105°C Current - Input Bias: 90 nA Voltage - Input Offset: 2 mV Supplier Device Package: 14-SOP Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 32 V |
на замовлення 10188 шт: термін постачання 21-31 дні (днів) |
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LB1962MC-AH | onsemi |
Description: IC MOTOR DRVR 3.8V-16.8V 10SOIC Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| LB1940T-MPB-H | onsemi |
Description: IC HALF BRIDGE DRV 400MA 20TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.9V ~ 6.5V Applications: DC Motors, General Purpose, Stepper Motors Current - Output / Channel: 400mA Technology: Bipolar Voltage - Load: 1.6V ~ 7.5V Supplier Device Package: 20-TSSOP Load Type: Inductive |
на замовлення 1573 шт: термін постачання 21-31 дні (днів) |
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| LB1940T-MPB-H | onsemi |
Description: IC HALF BRIDGE DRV 400MA 20TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -20°C ~ 85°C (TA) Output Configuration: Half Bridge (4) Voltage - Supply: 1.9V ~ 6.5V Applications: DC Motors, General Purpose, Stepper Motors Current - Output / Channel: 400mA Technology: Bipolar Voltage - Load: 1.6V ~ 7.5V Supplier Device Package: 20-TSSOP Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AR0821CSSC18SMEA1-DPBR | onsemi |
Description: 8MP 1/2 CIS SOPackaging: Tray Package / Case: 95-FBGA Type: CMOS Pixel Size: 2.1µm x 2.1µm Active Pixel Array: 3848H x 2168V Supplier Device Package: 95-IBGA (11x8) Frames per Second: 60.0 |
на замовлення 175500 шт: термін постачання 21-31 дні (днів) |
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74F109PC | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Complementary Mounting Type: Through Hole Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 17 mA Current - Output High, Low: 1mA, 20mA Trigger Type: Positive Edge Clock Frequency: 125 MHz Supplier Device Package: 16-PDIP Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF Number of Bits per Element: 1 |
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В кошику од. на суму грн. | ||||||||||||||||
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74F109SJX | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 17 mA Current - Output High, Low: 1mA, 20mA Trigger Type: Positive Edge Clock Frequency: 125 MHz Supplier Device Package: 16-SOP Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74F109SCX | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 17 mA Current - Output High, Low: 1mA, 20mA Trigger Type: Positive Edge Clock Frequency: 125 MHz Supplier Device Package: 16-SOIC Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTLUS4195PZTAG | onsemi |
Description: MOSFET P-CH 30V 2A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTLJD3181PZTAG | onsemi |
Description: MOSFET 2P-CH 20V 2.2A 6WDFNPackaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTLUS3A39PZTAG | onsemi |
Description: MOSFET P-CH 20V 3.4A 6UDFNPackaging: Bulk Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V |
на замовлення 160793 шт: термін постачання 21-31 дні (днів) |
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NTLUD3A260PZTAG | onsemi |
Description: MOSFET 2P-CH 20V 1.3A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.3A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) |
на замовлення 594 шт: термін постачання 21-31 дні (днів) |
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NCP81278DMNTXG | onsemi |
Description: IC SYNC BUCK CTLR 4PHASE 20QFNPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Voltage - Output: Up to 2V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.6V ~ 24V Operating Temperature: -40°C ~ 125°C (TA) Applications: Controller, CPU GPU Supplier Device Package: 20-QFN (3x3) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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NCP81278DMNTXG | onsemi |
Description: IC SYNC BUCK CTLR 4PHASE 20QFNPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Voltage - Output: Up to 2V Mounting Type: Surface Mount Number of Outputs: 1 Voltage - Input: 3.6V ~ 24V Operating Temperature: -40°C ~ 125°C (TA) Applications: Controller, CPU GPU Supplier Device Package: 20-QFN (3x3) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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2SD1801S-E | onsemi |
Description: TRANS NPN 50V 2A TPPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 800 mW |
на замовлення 95133 шт: термін постачання 21-31 дні (днів) |
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2SD1801T-E | onsemi |
Description: TRANS NPN 50V 2A TP-FA Packaging: Bag |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SC6043 | onsemi |
Description: TRANS NPN 50V 2A 3-MPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 5552 шт: термін постачання 21-31 дні (днів) |
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| LC898150XH-MH | onsemi |
Description: IC MOTOR DVR OIS AF 21WLCSP Packaging: Bulk Package / Case: 21-XFBGA, WLCSP Mounting Type: Surface Mount Function: Driver Current - Output: 130mA Interface: PWM, SPI Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.6V ~ 3.3V Applications: General Purpose Voltage - Load: 1.7V ~ 3.3V Supplier Device Package: 21-WLCSP (1.17x2.77) Motor Type - Stepper: Bipolar Motor Type - AC, DC: Brushed DC |
на замовлення 66006 шт: термін постачання 21-31 дні (днів) |
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DM74ALS109AN | onsemi |
Description: IC FF JK TYPE DUAL 1BIT 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Complementary Mounting Type: Through Hole Number of Elements: 2 Function: Set(Preset) and Reset Type: JK Type Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 4 mA Current - Output High, Low: 400µA, 8mA Trigger Type: Positive Edge Clock Frequency: 34 MHz Supplier Device Package: 16-PDIP Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFSH2065BDN-F085 | onsemi |
Description: DIODE ARRAY SIC 650V TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 238 шт: термін постачання 21-31 дні (днів) |
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FFSH2065B-F085 | onsemi |
Description: DIODE SIL CARB 650V 20A TO247-2Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
на замовлення 62557 шт: термін постачання 21-31 дні (днів) |
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NRVBSS25FA | onsemi |
Description: DIODE SCHOTTKY 50V 2A SOD123FAPackaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 9 ns Technology: Schottky Capacitance @ Vr, F: 93pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FA Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 50 V Qualification: AEC-Q101 |
на замовлення 2227 шт: термін постачання 21-31 дні (днів) |
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MC14043BCPG | onsemi |
Description: IC LATCH R-S QUAD NOR 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Output Type: Tri-State Mounting Type: Through Hole Circuit: 1:1 Logic Type: S-R Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-PDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14043BFELG | onsemi |
Description: IC S-R 1:1 16-SOEIAJPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 1:1 Logic Type: S-R Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-SOEIAJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMS4N01R2G | onsemi |
Description: MOSFET N-CH 20V 3.3A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C612NT1G | onsemi |
Description: NFET SO8FL 60V 235A 1.5MOPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTMFS5C612NT1G | onsemi |
Description: NFET SO8FL 60V 235A 1.5MOPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V |
на замовлення 248 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C612NT1G | onsemi |
Description: NFET SO8FL 60V 235A 1.5MOPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C612NT1G | onsemi |
Description: NFET SO8FL 60V 235A 1.5MOPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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TND314S-TL-E | onsemi |
Description: IC PWR DRIVER EXPD 1:2 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Rds On (Typ): 8Ohm Input Type: Inverting Voltage - Load: 4.5V ~ 25V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TND314S-TL-E | onsemi |
Description: IC PWR DRIVER EXPD 1:2 8SOPPackaging: Bulk Package / Case: 8-SOIC (0.173", 4.40mm Width) Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -55°C ~ 150°C (TJ) Rds On (Typ): 8Ohm Input Type: Inverting Voltage - Load: 4.5V ~ 25V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOP |
на замовлення 19750 шт: термін постачання 21-31 дні (днів) |
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SN74LS90D | onsemi |
Description: IC DECADE COUNTER 4-BIT 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Counter, Decade Reset: Asynchronous Operating Temperature: 0°C ~ 70°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 14-SOIC Voltage - Supply: 4.75 V ~ 5.25 V Count Rate: 42 MHz Number of Bits per Element: 4 |
на замовлення 17199 шт: термін постачання 21-31 дні (днів) |
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MUR1615CTG | onsemi |
Description: DIODE ARRAY GP 150V 8A TO220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
на замовлення 1870 шт: термін постачання 21-31 дні (днів) |
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NLVVHC1G86DFT2G | onsemi |
Description: IC GATE XOR 1CH 2-INP SC88A Packaging: Bulk Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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NLVVHC1G86DFT1G | onsemi |
Description: IC GATE XOR 1CH 2-INP SC88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NLVVHC1G86DFT1G | onsemi |
Description: IC GATE XOR 1CH 2-INP SC88A Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SC-88A (SC-70-5/SOT-353) Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Grade: Automotive Number of Circuits: 1 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
на замовлення 1936 шт: термін постачання 21-31 дні (днів) |
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MOC3011VM | onsemi |
Description: OPTOISOLATOR 4.17KV TRIAC 6DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: IEC/EN/DIN, UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Voltage - Off State: 250 V Current - DC Forward (If) (Max): 60 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LA6502-TLM-E | onsemi |
Description: IC MOTOR DRIVER 48HSSOP Packaging: Bulk Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs Mounting Type: Surface Mount Supplier Device Package: 48-HSSOP |
на замовлення 5571 шт: термін постачання 21-31 дні (днів) |
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LA6502-MPB-E | onsemi |
Description: IC MOTOR DRIVER 48HSSOP Packaging: Tube Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs Mounting Type: Surface Mount Supplier Device Package: 48-HSSOP |
на замовлення 1609 шт: термін постачання 21-31 дні (днів) |
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FDFMA2P853 | onsemi |
Description: MOSFET P-CH 20V 3A 6MICROFETPackaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDFMA2P853 | onsemi |
Description: MOSFET P-CH 20V 3A 6MICROFETPackaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDFMA2P853 | onsemi |
Description: MOSFET P-CH 20V 3A 6MICROFETPackaging: Bulk Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
на замовлення 2131833 шт: термін постачання 21-31 дні (днів) |
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MC74HC4852AN | onsemi |
Description: IC SWITCH SP4T X 2 400OHM 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 400Ohm Supplier Device Package: 16-PDIP Voltage - Supply, Single (V+): 2V ~ 6V Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel Capacitance (CS(off), CD(off)): 40pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 2 |
на замовлення 1375 шт: термін постачання 21-31 дні (днів) |
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| FFSB0665A |
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Виробник: onsemi
Description: DIODE SIL CARBIDE 650V 9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 9A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 361pF @ 1V, 100kHz
Current - Average Rectified (Io): 9A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 786 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.83 грн |
| 10+ | 143.89 грн |
| 100+ | 99.70 грн |
| FFSP0865A |
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Виробник: onsemi
Description: DIODE SIL CARB 650V 13A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 463pF @ 1V, 100kHz
Current - Average Rectified (Io): 13A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 13A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 463pF @ 1V, 100kHz
Current - Average Rectified (Io): 13A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
на замовлення 66355 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 333.37 грн |
| 10+ | 212.02 грн |
| 100+ | 150.24 грн |
| 800+ | 110.72 грн |
| 1600+ | 103.66 грн |
| 2400+ | 100.07 грн |
| 5600+ | 97.30 грн |
| MM3Z10VT1 |
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Виробник: onsemi
Description: DIODE ZENER 10V 200MW SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 10V 200MW SOD-323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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| NVMFS4C308NWFT1G |
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Виробник: onsemi
Description: TRENCH 30V NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Qualification: AEC-Q101
Description: TRENCH 30V NCH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 30.6W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Qualification: AEC-Q101
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| NVMFS6H858NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
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| NVMFS6H858NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 8.4A/29A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 20.7mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 221.20 грн |
| 10+ | 138.15 грн |
| 100+ | 95.59 грн |
| 500+ | 72.62 грн |
| NVMFS6H801NLWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 24A/160A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5126 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 232.18 грн |
| 10+ | 145.25 грн |
| 100+ | 100.75 грн |
| 500+ | 76.71 грн |
| NVMFS5C646NLWFAFT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 76.82 грн |
| NVMFS5C646NLWFAFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 20A/93A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 93A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2164 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.10 грн |
| 10+ | 147.82 грн |
| 100+ | 102.65 грн |
| 500+ | 78.21 грн |
| NVMFS6H801NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 83.64 грн |
| NVMFS6H801NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 23A/157A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 157A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 40 V
Qualification: AEC-Q101
на замовлення 13480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 251.79 грн |
| 10+ | 158.32 грн |
| 100+ | 110.35 грн |
| 500+ | 84.33 грн |
| NC7SZ32M5X-L22090 |
![]() |
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC GATE OR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Max Propagation Delay @ V, Max CL: 4.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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| NC7S04M5X-L22090 |
![]() |
Виробник: onsemi
Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 1CH 1-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 1
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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| NC7S86M5X-L22090 |
![]() |
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 1CH 2-INP SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SOT-23-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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| MOC3021SM |
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Виробник: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 16054 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.20 грн |
| 50+ | 26.77 грн |
| 100+ | 24.50 грн |
| 500+ | 19.18 грн |
| 1000+ | 17.93 грн |
| 2000+ | 16.87 грн |
| 5000+ | 15.45 грн |
| 10000+ | 14.74 грн |
| LM2902MX |
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Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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| LM2902MX |
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Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 30 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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| LM2902M |
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Виробник: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Description: IC OPAMP GP 4 CIRCUIT 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Input Bias: 90 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
на замовлення 10188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 304+ | 71.63 грн |
| LB1940T-MPB-H |
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Виробник: onsemi
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
на замовлення 1573 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 180+ | 112.06 грн |
| LB1940T-MPB-H |
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Виробник: onsemi
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
Description: IC HALF BRIDGE DRV 400MA 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 85°C (TA)
Output Configuration: Half Bridge (4)
Voltage - Supply: 1.9V ~ 6.5V
Applications: DC Motors, General Purpose, Stepper Motors
Current - Output / Channel: 400mA
Technology: Bipolar
Voltage - Load: 1.6V ~ 7.5V
Supplier Device Package: 20-TSSOP
Load Type: Inductive
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| AR0821CSSC18SMEA1-DPBR |
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Виробник: onsemi
Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 60.0
Description: 8MP 1/2 CIS SO
Packaging: Tray
Package / Case: 95-FBGA
Type: CMOS
Pixel Size: 2.1µm x 2.1µm
Active Pixel Array: 3848H x 2168V
Supplier Device Package: 95-IBGA (11x8)
Frames per Second: 60.0
на замовлення 175500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2700+ | 2342.95 грн |
| 74F109PC |
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Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
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| 74F109SJX |
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Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOP
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
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| 74F109SCX |
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Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 17 mA
Current - Output High, Low: 1mA, 20mA
Trigger Type: Positive Edge
Clock Frequency: 125 MHz
Supplier Device Package: 16-SOIC
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Bits per Element: 1
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| NTLUS4195PZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
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| NTLJD3181PZTAG |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET 2P-CH 20V 2.2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
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| NTLUS3A39PZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 3.4A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V
Description: MOSFET P-CH 20V 3.4A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 15 V
на замовлення 160793 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 643+ | 32.29 грн |
| NTLUD3A260PZTAG |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 1.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Description: MOSFET 2P-CH 20V 1.3A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 200mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
на замовлення 594 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.22 грн |
| 10+ | 31.72 грн |
| 100+ | 22.06 грн |
| 500+ | 16.17 грн |
| NCP81278DMNTXG |
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Виробник: onsemi
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 35.62 грн |
| 8000+ | 32.48 грн |
| NCP81278DMNTXG |
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Виробник: onsemi
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
Description: IC SYNC BUCK CTLR 4PHASE 20QFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Voltage - Output: Up to 2V
Mounting Type: Surface Mount
Number of Outputs: 1
Voltage - Input: 3.6V ~ 24V
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Controller, CPU GPU
Supplier Device Package: 20-QFN (3x3)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.78 грн |
| 10+ | 78.33 грн |
| 25+ | 66.11 грн |
| 100+ | 49.44 грн |
| 250+ | 43.40 грн |
| 500+ | 39.76 грн |
| 1000+ | 36.14 грн |
| 2SD1801S-E |
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Виробник: onsemi
Description: TRANS NPN 50V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Description: TRANS NPN 50V 2A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
на замовлення 95133 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1017+ | 21.72 грн |
| 2SC6043 |
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Виробник: onsemi
Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS NPN 50V 2A 3-MP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 5552 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1010+ | 20.32 грн |
| LC898150XH-MH |
Виробник: onsemi
Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Bulk
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DVR OIS AF 21WLCSP
Packaging: Bulk
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Function: Driver
Current - Output: 130mA
Interface: PWM, SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.6V ~ 3.3V
Applications: General Purpose
Voltage - Load: 1.7V ~ 3.3V
Supplier Device Package: 21-WLCSP (1.17x2.77)
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
на замовлення 66006 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 177+ | 123.00 грн |
| DM74ALS109AN |
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Виробник: onsemi
Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 34 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF JK TYPE DUAL 1BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Complementary
Mounting Type: Through Hole
Number of Elements: 2
Function: Set(Preset) and Reset
Type: JK Type
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 4 mA
Current - Output High, Low: 400µA, 8mA
Trigger Type: Positive Edge
Clock Frequency: 34 MHz
Supplier Device Package: 16-PDIP
Max Propagation Delay @ V, Max CL: 18ns @ 5V, 50pF
Number of Bits per Element: 1
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| FFSH2065BDN-F085 |
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Виробник: onsemi
Description: DIODE ARRAY SIC 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE ARRAY SIC 650V TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 238 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 681.63 грн |
| 30+ | 386.83 грн |
| 120+ | 327.57 грн |
| FFSH2065B-F085 |
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Виробник: onsemi
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
на замовлення 62557 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 694.97 грн |
| 30+ | 395.12 грн |
| 120+ | 334.82 грн |
| 510+ | 272.77 грн |
| 1020+ | 264.94 грн |
| NRVBSS25FA |
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Виробник: onsemi
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 50V 2A SOD123FA
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 93pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 50 V
Qualification: AEC-Q101
на замовлення 2227 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.59 грн |
| 16+ | 19.87 грн |
| 100+ | 15.76 грн |
| 500+ | 11.18 грн |
| 1000+ | 10.01 грн |
| MC14043BCPG |
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Виробник: onsemi
Description: IC LATCH R-S QUAD NOR 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-PDIP
Description: IC LATCH R-S QUAD NOR 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-PDIP
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| MC14043BFELG |
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Виробник: onsemi
Description: IC S-R 1:1 16-SOEIAJ
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOEIAJ
Description: IC S-R 1:1 16-SOEIAJ
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: S-R Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOEIAJ
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| NTMS4N01R2G |
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Виробник: onsemi
Description: MOSFET N-CH 20V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Description: MOSFET N-CH 20V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
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| NTMFS5C612NT1G |
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Виробник: onsemi
Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
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| NTMFS5C612NT1G |
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Виробник: onsemi
Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 25 V
на замовлення 248 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 224.34 грн |
| 10+ | 137.85 грн |
| 100+ | 106.52 грн |
| NVMFS5C612NT1G |
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Виробник: onsemi
Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101
Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 139.75 грн |
| NVMFS5C612NT1G |
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Виробник: onsemi
Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101
Description: NFET SO8FL 60V 235A 1.5MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 225A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 308.27 грн |
| 10+ | 206.74 грн |
| 100+ | 152.72 грн |
| 500+ | 126.29 грн |
| TND314S-TL-E |
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Виробник: onsemi
Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
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| TND314S-TL-E |
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Виробник: onsemi
Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
Description: IC PWR DRIVER EXPD 1:2 8SOP
Packaging: Bulk
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Rds On (Typ): 8Ohm
Input Type: Inverting
Voltage - Load: 4.5V ~ 25V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOP
на замовлення 19750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 226+ | 99.87 грн |
| SN74LS90D |
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Виробник: onsemi
Description: IC DECADE COUNTER 4-BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Counter, Decade
Reset: Asynchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Voltage - Supply: 4.75 V ~ 5.25 V
Count Rate: 42 MHz
Number of Bits per Element: 4
Description: IC DECADE COUNTER 4-BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Counter, Decade
Reset: Asynchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Voltage - Supply: 4.75 V ~ 5.25 V
Count Rate: 42 MHz
Number of Bits per Element: 4
на замовлення 17199 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 204+ | 102.07 грн |
| MUR1615CTG |
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Виробник: onsemi
Description: DIODE ARRAY GP 150V 8A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE ARRAY GP 150V 8A TO220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
на замовлення 1870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 396+ | 54.50 грн |
| NLVVHC1G86DFT2G |
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2197+ | 10.28 грн |
| NLVVHC1G86DFT1G |
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| NLVVHC1G86DFT1G |
Виробник: onsemi
Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC GATE XOR 1CH 2-INP SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 1936 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.88 грн |
| 15+ | 20.39 грн |
| 25+ | 17.04 грн |
| 100+ | 8.88 грн |
| 250+ | 7.81 грн |
| 500+ | 6.66 грн |
| 1000+ | 4.46 грн |
| MOC3011VM |
![]() |
Виробник: onsemi
Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 4.17KV TRIAC 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 250 V
Current - DC Forward (If) (Max): 60 mA
товару немає в наявності
В кошику
од. на суму грн.
| LA6502-TLM-E |
Виробник: onsemi
Description: IC MOTOR DRIVER 48HSSOP
Packaging: Bulk
Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs
Mounting Type: Surface Mount
Supplier Device Package: 48-HSSOP
Description: IC MOTOR DRIVER 48HSSOP
Packaging: Bulk
Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs
Mounting Type: Surface Mount
Supplier Device Package: 48-HSSOP
на замовлення 5571 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 177+ | 124.85 грн |
| LA6502-MPB-E |
Виробник: onsemi
Description: IC MOTOR DRIVER 48HSSOP
Packaging: Tube
Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs
Mounting Type: Surface Mount
Supplier Device Package: 48-HSSOP
Description: IC MOTOR DRIVER 48HSSOP
Packaging: Tube
Package / Case: 48-SSOP (0.311", 7.90mm Width) Exposed Pad + 2 Heat Tabs
Mounting Type: Surface Mount
Supplier Device Package: 48-HSSOP
на замовлення 1609 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 177+ | 124.85 грн |
| FDFMA2P853 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 3A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Description: MOSFET P-CH 20V 3A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
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В кошику
од. на суму грн.
| FDFMA2P853 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 3A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Description: MOSFET P-CH 20V 3A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| FDFMA2P853 |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 20V 3A 6MICROFET
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
Description: MOSFET P-CH 20V 3A 6MICROFET
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
на замовлення 2131833 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 825+ | 26.92 грн |
| MC74HC4852AN |
Виробник: onsemi
Description: IC SWITCH SP4T X 2 400OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 2V ~ 6V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 400OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 400Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 2V ~ 6V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel Capacitance (CS(off), CD(off)): 40pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
на замовлення 1375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1375+ | 18.09 грн |
































