| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MM3Z15VB | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ4692T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode Tolerance: ±5% Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 6.8V Type of diode: Zener |
на замовлення 8629 шт: термін постачання 14-30 дні (днів) |
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SZMMSZ4692T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode Tolerance: ±5% Mounting: SMD Manufacturer series: MMSZ4xxTxG Power dissipation: 0.5W Application: automotive industry Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123 Zener voltage: 6.8V Type of diode: Zener |
на замовлення 2760 шт: термін постачання 14-30 дні (днів) |
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| NVMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Kind of package: reel; tape Mounting: SMD Case: TCPAK10 Polarisation: unipolar Gate charge: 68nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 58W Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Kind of package: reel; tape Mounting: SMD Case: TCPAK10 Polarisation: unipolar Gate charge: 68nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 58W Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FDA59N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 35A Pulsed drain current: 236A Power dissipation: 392W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS89161 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 176mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.1nC Technology: PowerTrench® |
на замовлення 1993 шт: термін постачання 14-30 дні (днів) |
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FDS89161LZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 182mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDN5618P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3 Features of semiconductor devices: logic level Mounting: SMD Case: SuperSOT-3 Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.25A Gate charge: 13.8nC On-state resistance: 0.23Ω Power dissipation: 0.46W Kind of package: reel; tape Gate-source voltage: ±20V Technology: PowerTrench® Type of transistor: P-MOSFET Kind of channel: enhancement |
на замовлення 82 шт: термін постачання 14-30 дні (днів) |
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| FDB16AN08A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 135W Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 28nC On-state resistance: 16mΩ Gate-source voltage: ±20V Drain current: 58A Drain-source voltage: 75V Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
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RS1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RS1KFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1.2A Reverse recovery time: 300ns Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVHPRS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 521 шт: термін постачання 14-30 дні (днів) |
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| SZ1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC115EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Quantity in set/package: 3000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 80...150 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Case: SC75; SOT416 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC115EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ Quantity in set/package: 8000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 80...150 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Case: SOT723 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC115TET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ Quantity in set/package: 3000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 160...350 Base resistor: 100kΩ Case: SC75; SOT416 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC115TM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ Quantity in set/package: 8000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 160...350 Base resistor: 100kΩ Case: SOT723 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP137AFCTC110T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP137 Mounting: SMD Type of integrated circuit: voltage regulator Case: WLCSP6 Operating temperature: -40...85°C Voltage drop: 60mV Output current: 0.7A Number of channels: 1 Tolerance: ±1% Output voltage: 1.1V Input voltage: 1.1...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC1G04DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape Delay time: 7ns |
на замовлення 630 шт: термін постачання 14-30 дні (днів) |
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| MC74HC1G04DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Number of inputs: 1 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape Delay time: 20ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G00DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G04DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G32DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G08DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G32DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G00DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G00DBVT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; 15ns Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC74A Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V Technology: CMOS Delay time: 15ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G00DFT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G00DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G02DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G02DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G02DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: NOR Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Supply voltage: 2...6V Operating temperature: -55...125°C Family: HC Quiescent current: 1µA Number of outputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G02DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 20ns Family: HC |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G04DBVT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G08DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G08DFT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G08DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G08DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: AND Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G32DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape Delay time: 20ns |
на замовлення 5985 шт: термін постачання 14-30 дні (днів) |
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| MC74HC1G32DFT1G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1 Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Number of outputs: 1 Supply voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G32DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Delay time: 20ns Kind of package: reel; tape Technology: CMOS |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G32DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; 2÷6V Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Quiescent current: 1µA Family: HC Supply voltage: 2...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74LVX4051MNTWG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: digital; demultiplexer,multiplexer; Ch: 1; QFN16; 2.5÷6VDC Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: QFN16 Supply voltage: 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 80µA Technology: CMOS Manufacturer series: LVX |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NIS5420MT5TXG | ONSEMI |
Category: Integrated circuits - Unclassified Description: NIS5420MT5TXG |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| NIS6420MT1TWG | ONSEMI |
Category: Power switches - integrated circuits Description: NIS6420MT1TWG |
на замовлення 12000 шт: термін постачання 14-30 дні (днів) |
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MC74LCX125DG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; tube Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: LCX Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Supply voltage: 1.5...3.6V DC Family: LCX Integrated circuit features: 5V tolerant on inputs/outputs |
на замовлення 913 шт: термін постачання 14-30 дні (днів) |
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| ESDU1052FCT5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5.9÷8.5V; unidirectional; 01005; reel,tape Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Max. off-state voltage: 5.5V Case - mm: 0402 Breakdown voltage: 5.9...8.5V Case - inch: 01005 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MURA220T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.95V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 327 шт: термін постачання 14-30 дні (днів) |
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MURA120T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMA Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 4914 шт: термін постачання 14-30 дні (днів) |
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| NDT014L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.8A; Idm: 10A; 3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.8A Pulsed drain current: 10A Power dissipation: 3W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FQD1N80TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 0.63A; 45W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 0.63A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 20Ω Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1150 шт: термін постачання 14-30 дні (днів) |
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FDD7N20TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 3A Power dissipation: 43W Case: DPAK Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2369 шт: термін постачання 14-30 дні (днів) |
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NRVBA1H100NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.84V Load current: 1A Max. forward impulse current: 50A Max. off-state voltage: 0.1kV Application: automotive industry Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NRVBA2H100NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape Case: SMA Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.79V Load current: 2A Max. forward impulse current: 130A Max. off-state voltage: 0.1kV Application: automotive industry Semiconductor structure: single diode Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDS2572 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 3.1A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 53mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2032 шт: термін постачання 14-30 дні (днів) |
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| MBR20H150CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220AB; Ufmax: 0.68V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.68V Kind of package: tube Max. forward impulse current: 180A Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NLSX4373MUTAG | ONSEMI |
Category: Level translators Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator Number of channels: 2 Supply voltage: 1.5...5.5V DC Mounting: SMD Case: uDFN8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: auto-direction sensing Frequency: 20MHz |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. |
| MM3Z15VB |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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В кошику
од. на суму грн.
| MMSZ4692T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 6.8V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 6.8V
Type of diode: Zener
на замовлення 8629 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.32 грн |
| 105+ | 3.95 грн |
| 125+ | 3.29 грн |
| 194+ | 2.12 грн |
| 226+ | 1.83 грн |
| 500+ | 1.56 грн |
| 1000+ | 1.50 грн |
| 3000+ | 1.44 грн |
| SZMMSZ4692T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 6.8V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Mounting: SMD
Manufacturer series: MMSZ4xxTxG
Power dissipation: 0.5W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123
Zener voltage: 6.8V
Type of diode: Zener
на замовлення 2760 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.17 грн |
| 27+ | 15.48 грн |
| 35+ | 12.02 грн |
| 100+ | 5.02 грн |
| NVMJST2D6N08HTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
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В кошику
од. на суму грн.
| NTMJST2D6N08HTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FDA59N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| FDS89161 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Technology: PowerTrench®
на замовлення 1993 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.59 грн |
| 25+ | 69.18 грн |
| FDS89161LZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| FDN5618P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3
Features of semiconductor devices: logic level
Mounting: SMD
Case: SuperSOT-3
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.25A
Gate charge: 13.8nC
On-state resistance: 0.23Ω
Power dissipation: 0.46W
Kind of package: reel; tape
Gate-source voltage: ±20V
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3
Features of semiconductor devices: logic level
Mounting: SMD
Case: SuperSOT-3
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.25A
Gate charge: 13.8nC
On-state resistance: 0.23Ω
Power dissipation: 0.46W
Kind of package: reel; tape
Gate-source voltage: ±20V
Technology: PowerTrench®
Type of transistor: P-MOSFET
Kind of channel: enhancement
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 31.93 грн |
| 18+ | 22.90 грн |
| 21+ | 20.34 грн |
| 50+ | 16.14 грн |
| FDB16AN08A0 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 135W
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 58A
Drain-source voltage: 75V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 135W
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 58A
Drain-source voltage: 75V
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| RS1K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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В кошику
од. на суму грн.
| RS1KFP |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
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В кошику
од. на суму грн.
| RS1KFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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В кошику
од. на суму грн.
| NRVHPRS1KFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| 1SMB5932BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 521 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.63 грн |
| 28+ | 14.82 грн |
| 32+ | 12.93 грн |
| 50+ | 8.65 грн |
| 100+ | 7.33 грн |
| 200+ | 6.75 грн |
| SZ1SMB5932BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
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од. на суму грн.
| DTC115EET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
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| DTC115EM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
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| DTC115TET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
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од. на суму грн.
| DTC115TM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
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| NCP137AFCTC110T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP137
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: WLCSP6
Operating temperature: -40...85°C
Voltage drop: 60mV
Output current: 0.7A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.1...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP137
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: WLCSP6
Operating temperature: -40...85°C
Voltage drop: 60mV
Output current: 0.7A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.1...5.5V
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од. на суму грн.
| MC74HC1G04DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 7ns
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 7ns
на замовлення 630 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.21 грн |
| 148+ | 2.80 грн |
| 169+ | 2.44 грн |
| 184+ | 2.24 грн |
| 202+ | 2.04 грн |
| 250+ | 1.84 грн |
| 500+ | 1.81 грн |
| MC74HC1G04DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 20ns
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 20ns
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В кошику
од. на суму грн.
| MC74HC1G00DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
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од. на суму грн.
| MC74HC1G04DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G32DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G08DBVT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G32DBVT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
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В кошику
од. на суму грн.
| MC74HC1G00DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G00DBVT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; 15ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Technology: CMOS
Delay time: 15ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC74A; -55÷125°C; 1uA; 15ns
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Technology: CMOS
Delay time: 15ns
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од. на суму грн.
| MC74HC1G00DFT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
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од. на суму грн.
| MC74HC1G00DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G02DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G02DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G02DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Number of outputs: 1
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V
Operating temperature: -55...125°C
Family: HC
Quiescent current: 1µA
Number of outputs: 1
товару немає в наявності
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од. на суму грн.
| MC74HC1G02DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| MC74HC1G04DBVT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G08DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G08DFT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G08DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MC74HC1G08DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G32DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 20ns
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Delay time: 20ns
на замовлення 5985 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 112+ | 3.97 грн |
| 179+ | 2.31 грн |
| 218+ | 1.89 грн |
| 236+ | 1.75 грн |
| MC74HC1G32DFT1G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; OUT: 1
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Number of outputs: 1
Supply voltage: 2...6V
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| MC74HC1G32DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Delay time: 20ns
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Delay time: 20ns
Kind of package: reel; tape
Technology: CMOS
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Мінімальне замовлення: 3000 шт
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| MC74HC1G32DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; 2÷6V
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; -55÷125°C; 1uA; HC; 2÷6V
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: HC
Supply voltage: 2...6V
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| MC74LVX4051MNTWG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; QFN16; 2.5÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: QFN16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS
Manufacturer series: LVX
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; QFN16; 2.5÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: QFN16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS
Manufacturer series: LVX
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NIS5420MT5TXG |
|
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 69.18 грн |
| NIS6420MT1TWG |
|
на замовлення 12000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 54.99 грн |
| MC74LCX125DG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 1.5...3.6V DC
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer; Ch: 4; IN: 2; CMOS; SMD; SOIC14; LCX; tube
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 1.5...3.6V DC
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
на замовлення 913 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.40 грн |
| 28+ | 14.91 грн |
| 30+ | 13.75 грн |
| 55+ | 13.18 грн |
| 110+ | 12.77 грн |
| 275+ | 12.19 грн |
| 550+ | 11.78 грн |
| ESDU1052FCT5G |
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.9÷8.5V; unidirectional; 01005; reel,tape
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 5.5V
Case - mm: 0402
Breakdown voltage: 5.9...8.5V
Case - inch: 01005
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.9÷8.5V; unidirectional; 01005; reel,tape
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Max. off-state voltage: 5.5V
Case - mm: 0402
Breakdown voltage: 5.9...8.5V
Case - inch: 01005
Kind of package: reel; tape
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од. на суму грн.
| MURA220T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 950mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.95V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 327 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 17.74 грн |
| 32+ | 13.01 грн |
| 50+ | 10.54 грн |
| 100+ | 9.72 грн |
| 250+ | 8.65 грн |
| MURA120T3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMA; Ufmax: 0.875V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMA
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 4914 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.14 грн |
| 18+ | 24.21 грн |
| 22+ | 19.35 грн |
| 29+ | 14.50 грн |
| 50+ | 11.86 грн |
| 100+ | 10.13 грн |
| 250+ | 8.65 грн |
| 500+ | 8.07 грн |
| 1000+ | 7.66 грн |
| NDT014L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.8A; Idm: 10A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.8A
Pulsed drain current: 10A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.8A; Idm: 10A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.8A
Pulsed drain current: 10A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 4000 шт
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од. на суму грн.
| FQD1N80TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.63A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.63A; 45W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.01 грн |
| 12+ | 35.66 грн |
| 100+ | 32.12 грн |
| 500+ | 29.98 грн |
| 1000+ | 26.85 грн |
| FDD7N20TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 3A; 43W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 3A
Power dissipation: 43W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2369 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 86.92 грн |
| 7+ | 63.25 грн |
| 10+ | 55.26 грн |
| 50+ | 39.70 грн |
| 100+ | 34.59 грн |
| 500+ | 26.27 грн |
| NRVBA1H100NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.84V
Load current: 1A
Max. forward impulse current: 50A
Max. off-state voltage: 0.1kV
Application: automotive industry
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.84V
Load current: 1A
Max. forward impulse current: 50A
Max. off-state voltage: 0.1kV
Application: automotive industry
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| NRVBA2H100NT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 130A
Max. off-state voltage: 0.1kV
Application: automotive industry
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.79V
Load current: 2A
Max. forward impulse current: 130A
Max. off-state voltage: 0.1kV
Application: automotive industry
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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| FDS2572 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 53mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2032 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 152.55 грн |
| 10+ | 93.89 грн |
| 25+ | 80.71 грн |
| 100+ | 70.00 грн |
| MBR20H150CTG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Kind of package: tube
Max. forward impulse current: 180A
Max. load current: 20A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220AB; Ufmax: 0.68V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.68V
Kind of package: tube
Max. forward impulse current: 180A
Max. load current: 20A
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од. на суму грн.
| NLSX4373MUTAG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator
Number of channels: 2
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
Frequency: 20MHz
Category: Level translators
Description: IC: digital; 3-state,logic level voltage translator; Ch: 2; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator
Number of channels: 2
Supply voltage: 1.5...5.5V DC
Mounting: SMD
Case: uDFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: auto-direction sensing
Frequency: 20MHz
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.