| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SZMM5Z5V6ST1G | ONSEMI |
 Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5ZxxST1G Application: automotive industry |
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| SZMM5Z5V6T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5ZxxT1G Application: automotive industry |
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NL27WZ17DFT2G-L22348 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Mounting: SMD Case: SC88A Operating temperature: -55...125°C Number of channels: 2 Kind of input: with Schmitt trigger Supply voltage: 1.65...5.5V DC |
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| NL27WZ17DFT2G-L22348 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; IN: 2; SMD; SC70-6; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of inputs: 2 Mounting: SMD Case: SC70-6 Operating temperature: -55...125°C Kind of output: push-pull Family: LCX Number of outputs: 2 |
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| MM3Z3V9C | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3Z |
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| GBPC3506 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
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FSL176MRTUDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220-6U; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: TO220-6U Mounting: THT Operating temperature: -40...125°C Topology: flyback Input voltage: 85...265V On-state resistance: 1.6Ω Duty cycle factor: 61...73% Power: 70W Operating voltage: 7.5...24.5V DC |
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| NXH030F120M3F1PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 38A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 68.2mΩ Pulsed drain current: 115A Power dissipation: 100W Technology: SiC Gate-source voltage: -10...22V Kind of package: in-tray Mechanical mounting: screw |
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BSP52T1G | ONSEMI |
 Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
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BSP52T3G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
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| SBSP52T1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| NTBG040N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 149A Power dissipation: 131W Case: D2PAK-7 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: SMD Gate charge: 75nC Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Kind of channel: enhancement |
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| NVBG040N120M3S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 40A Pulsed drain current: 149A Power dissipation: 131W Case: D2PAK-7 Gate-source voltage: -3...18V On-state resistance: 80mΩ Mounting: SMD Gate charge: 75nC Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Kind of channel: enhancement |
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MMSZ4702T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode Tolerance: ±5% Manufacturer series: MMSZ4xxTxG Mounting: SMD Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V |
на замовлення 742 шт: термін постачання 14-30 дні (днів) |
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| NTD360N80S3Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8.2A Pulsed drain current: 32.5A Power dissipation: 96W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 25.3nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTPF360N80S3Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Pulsed drain current: 32.5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 25.3nC Kind of package: tube Kind of channel: enhancement |
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| NJVMJD112G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: tube Application: automotive industry |
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4N32M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV CTR@If: 50%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 5µs Turn-off time: 0.1ms |
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| FSL337LRN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1 Operating voltage: 7...24.5V DC Case: DIP7 Mounting: THT Operating temperature: -40...125°C Application: SMPS Type of integrated circuit: PMIC Number of channels: 1 Output current: 1.8A Topology: buck; buck-boost; flyback On-state resistance: 4.75Ω Power: 9/20W Kind of integrated circuit: AC/DC switcher; PWM controller Duty cycle factor: 61...73% Input voltage: 85...265V Output voltage: 700V Frequency: 50kHz |
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| FSA4157P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1 Type of integrated circuit: analog switch Mounting: SMD Output configuration: SPDT Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Number of channels: 1 Number of inputs: 1 Number of outputs: 2 Case: SC70-6; SC88; SOT363 |
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NLHV4157NDFT2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: SPDT; switch Technology: CMOS Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Supply voltage: -12...-4V DC Number of channels: 1 Number of inputs: 2 Case: SC88 |
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1N4149 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Power dissipation: 0.5W Reverse recovery time: 4ns |
на замовлення 4600 шт: термін постачання 14-30 дні (днів) |
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1N4149TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.5A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 50µA Power dissipation: 0.5W Reverse recovery time: 4ns |
на замовлення 7495 шт: термін постачання 14-30 дні (днів) |
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| NTBLS001N06C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 422A Pulsed drain current: 900A Power dissipation: 284W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 0.9mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
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| NIS5132MN2TXG | ONSEMI |
Category: Power switches - integrated circuits Description: NIS5132MN2TXG |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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MMBTA06 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
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SMMBTA06LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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| SMMBTA06WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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| SMMBTA06WT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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| FAN3181TMX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SOIC8 Output current: -2...1.5A Number of channels: 1 Supply voltage: 25V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting |
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BD136G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 45V; 1.5A; 12.5W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1.5A Power dissipation: 12.5W Case: TO225 Current gain: 40...250 Mounting: THT Kind of package: bulk |
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NUP4302MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; TSOP6; Ch: 4; reel,tape Type of diode: TVS array Case: TSOP6 Mounting: SMD Semiconductor structure: bidirectional Kind of package: reel; tape Number of channels: 4 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MMSZ4701T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; reel,tape; single diode Mounting: SMD Tolerance: ±5% Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Manufacturer series: MMSZ4xxTxG Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 5611 шт: термін постачання 14-30 дні (днів) |
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MBR3045PT | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 0.76V Max. load current: 30A Max. forward impulse current: 200A Kind of package: tube |
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BD239CTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 30W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube |
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| US1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
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NRVUS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
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SM15T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; ESD; SOT23 Type of diode: TVS array Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 10A Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Number of channels: 2 Version: ESD |
на замовлення 60 шт: термін постачання 14-30 дні (днів) |
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| GBPC1510 | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk Max. forward voltage: 1.1V |
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| GBPC1510W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 0.3kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk Max. forward voltage: 1.1V |
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В кошику од. на суму грн. | |||||||||||||||||
| NCV2393DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; IB: 1pA Type of integrated circuit: comparator Number of comparators: 2 Operating voltage: 2.7...16V Mounting: SMT Case: SO8 Operating temperature: -65...150°C Input offset voltage: 13mV Kind of package: reel; tape Input offset current: 1pA Input bias current: 1pA Application: automotive industry |
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MC74HCT366ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; 3-state,buffer,hex,inverting; Ch: 6; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex; inverting Number of channels: 6 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Kind of output: 3-state Family: HCT |
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| NXH450B100H4Q2F2PG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit Electrical mounting: Press-Fit Mechanical mounting: screw Application: for UPS; Inverter Type of semiconductor module: IGBT Technology: SiC Semiconductor structure: SiC diode/transistor Gate-emitter voltage: ±20V Collector current: 450A Max. off-state voltage: 1kV |
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74LCX32MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCX |
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74LCX32MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Family: LCX |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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| MC100EP101FAG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR,OR; Ch: 4; IN: 16; ECL; SMD; 100EP; -40÷85°C; OUT: 8 Type of integrated circuit: digital Kind of gate: NOR; OR Number of channels: 4 Number of inputs: 16 Technology: ECL Mounting: SMD Manufacturer series: 100EP Operating temperature: -40...85°C Number of outputs: 8 Supply voltage: 3...5.5V |
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| FCP400N80Z | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: TO220-3 Kind of package: tube Polarisation: unipolar Gate charge: 43nC On-state resistance: 0.4Ω Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 33A Power dissipation: 195W Drain-source voltage: 800V |
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В кошику од. на суму грн. | |||||||||||||||||
| SZESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD923F Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
 |
SD12CT1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; ESD; 13.3V; 15A; bidirectional; SOD323; reel,tape Type of diode: TVS Version: ESD Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Kind of package: reel; tape Leakage current: 1µA |
на замовлення 1539 шт: термін постачання 14-30 дні (днів) |
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NC7WZ17P6X | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Mounting: SMD Case: SC70-6 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 10µA Kind of input: with Schmitt trigger Operating temperature: -40...85°C |
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| NC7WZ17P6X-L22347 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 2 Technology: CMOS Mounting: SMD Case: SC70-6 Kind of package: reel; tape Supply voltage: 1.65...5.5V DC Quiescent current: 10µA Kind of input: with Schmitt trigger Part status: Not recommended for new designs |
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 |
MC79M08BDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00 Manufacturer series: MC79M00 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Output voltage: -8V Output current: 0.5A Number of channels: 1 Voltage drop: 1.1V Tolerance: ±4% Kind of package: reel; tape Case: DPAK Kind of voltage regulator: fixed; linear |
на замовлення 310 шт: термін постачання 14-30 дні (днів) |
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1N5233B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 4131 шт: термін постачання 14-30 дні (днів) |
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1N5235BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 4694 шт: термін постачання 14-30 дні (днів) |
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1N5230BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 4774 шт: термін постачання 14-30 дні (днів) |
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| 1N5237BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
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В кошику од. на суму грн. | |||||||||||||||||
| 1N5231BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
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В кошику од. на суму грн. | |||||||||||||||||
| 1N5232B | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5234BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
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В кошику од. на суму грн. | |||||||||||||||||
| 1N5251BTR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 22V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
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В кошику од. на суму грн. |
| SZMM5Z5V6ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxST1G
Application: automotive industry
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| SZMM5Z5V6T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; SOD523F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| NL27WZ17DFT2G-L22348 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Number of channels: 2
Kind of input: with Schmitt trigger
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC88A; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Number of channels: 2
Kind of input: with Schmitt trigger
Supply voltage: 1.65...5.5V DC
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| NL27WZ17DFT2G-L22348 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; IN: 2; SMD; SC70-6; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of inputs: 2
Mounting: SMD
Case: SC70-6
Operating temperature: -55...125°C
Kind of output: push-pull
Family: LCX
Number of outputs: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; IN: 2; SMD; SC70-6; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of inputs: 2
Mounting: SMD
Case: SC70-6
Operating temperature: -55...125°C
Kind of output: push-pull
Family: LCX
Number of outputs: 2
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| MM3Z3V9C |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3Z
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| GBPC3506 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| FSL176MRTUDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220-6U; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220-6U
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Duty cycle factor: 61...73%
Power: 70W
Operating voltage: 7.5...24.5V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 67kHz; Ch: 1; TO220-6U; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: TO220-6U
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 1.6Ω
Duty cycle factor: 61...73%
Power: 70W
Operating voltage: 7.5...24.5V DC
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| NXH030F120M3F1PTG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 38A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 38A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 68.2mΩ
Pulsed drain current: 115A
Power dissipation: 100W
Technology: SiC
Gate-source voltage: -10...22V
Kind of package: in-tray
Mechanical mounting: screw
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| BSP52T1G | |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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| BSP52T3G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
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| SBSP52T1G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NTBG040N120M3S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
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| NVBG040N120M3S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
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| MMSZ4702T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD123; reel,tape; single diode
Tolerance: ±5%
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
на замовлення 742 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 97+ | 4.40 грн |
| 118+ | 3.59 грн |
| 139+ | 3.06 грн |
| 163+ | 2.61 грн |
| 250+ | 2.10 грн |
| 500+ | 1.79 грн |
| NTD360N80S3Z |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.2A; Idm: 32.5A; 96W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8.2A
Pulsed drain current: 32.5A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 25.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTPF360N80S3Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 25.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 32.5A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Pulsed drain current: 32.5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 25.3nC
Kind of package: tube
Kind of channel: enhancement
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| NJVMJD112G |
|
Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Application: automotive industry
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| 4N32M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
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| FSL337LRN |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1
Operating voltage: 7...24.5V DC
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Application: SMPS
Type of integrated circuit: PMIC
Number of channels: 1
Output current: 1.8A
Topology: buck; buck-boost; flyback
On-state resistance: 4.75Ω
Power: 9/20W
Kind of integrated circuit: AC/DC switcher; PWM controller
Duty cycle factor: 61...73%
Input voltage: 85...265V
Output voltage: 700V
Frequency: 50kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 700V; 50kHz; Ch: 1
Operating voltage: 7...24.5V DC
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Application: SMPS
Type of integrated circuit: PMIC
Number of channels: 1
Output current: 1.8A
Topology: buck; buck-boost; flyback
On-state resistance: 4.75Ω
Power: 9/20W
Kind of integrated circuit: AC/DC switcher; PWM controller
Duty cycle factor: 61...73%
Input voltage: 85...265V
Output voltage: 700V
Frequency: 50kHz
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| FSA4157P6X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Type of integrated circuit: analog switch
Mounting: SMD
Output configuration: SPDT
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of channels: 1
Number of inputs: 1
Number of outputs: 2
Case: SC70-6; SC88; SOT363
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Type of integrated circuit: analog switch
Mounting: SMD
Output configuration: SPDT
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Number of channels: 1
Number of inputs: 1
Number of outputs: 2
Case: SC70-6; SC88; SOT363
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| NLHV4157NDFT2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: SPDT; switch
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -12...-4V DC
Number of channels: 1
Number of inputs: 2
Case: SC88
Category: Decoders, multiplexers, switches
Description: IC: digital; switch,SPDT; Ch: 1; IN: 2; CMOS; SMD; SC88; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: SPDT; switch
Technology: CMOS
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Supply voltage: -12...-4V DC
Number of channels: 1
Number of inputs: 2
Case: SC88
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| 1N4149 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 4600 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 3.65 грн |
| 162+ | 2.62 грн |
| 204+ | 2.08 грн |
| 250+ | 1.81 грн |
| 500+ | 1.61 грн |
| 1000+ | 1.43 грн |
| 1N4149TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 7495 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 117+ | 3.64 грн |
| 180+ | 2.36 грн |
| 250+ | 1.98 грн |
| 500+ | 1.73 грн |
| 1000+ | 1.50 грн |
| 2000+ | 1.30 грн |
| 5000+ | 1.07 грн |
| NTBLS001N06C |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Power dissipation: 284W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 422A; Idm: 900A; 284W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 422A
Pulsed drain current: 900A
Power dissipation: 284W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NIS5132MN2TXG |
|
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2750+ | 50.78 грн |
| MMBTA06 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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| SMMBTA06LT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| SMMBTA06WT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| SMMBTA06WT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| FAN3181TMX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -2...1.5A
Number of channels: 1
Supply voltage: 25V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOIC8
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SOIC8
Output current: -2...1.5A
Number of channels: 1
Supply voltage: 25V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
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| BD136G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO225
Current gain: 40...250
Mounting: THT
Kind of package: bulk
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| NUP4302MR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Case: TSOP6
Mounting: SMD
Semiconductor structure: bidirectional
Kind of package: reel; tape
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Case: TSOP6
Mounting: SMD
Semiconductor structure: bidirectional
Kind of package: reel; tape
Number of channels: 4
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 74.75 грн |
| 10+ | 51.98 грн |
| 30+ | 44.70 грн |
| MMSZ4701T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxTxG
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Manufacturer series: MMSZ4xxTxG
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 5611 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 114+ | 3.72 грн |
| 192+ | 2.21 грн |
| 500+ | 1.58 грн |
| 1000+ | 1.48 грн |
| MBR3045PT |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.76V
Max. load current: 30A
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.76V
Max. load current: 30A
Max. forward impulse current: 200A
Kind of package: tube
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| BD239CTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
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| US1JFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| NRVUS1JFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| SM15T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 10A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 2
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 16.7V; 10A; 300W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 10A
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Number of channels: 2
Version: ESD
на замовлення 60 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.44 грн |
| 22+ | 19.81 грн |
| 25+ | 17.52 грн |
| 50+ | 13.12 грн |
| GBPC1510 |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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| GBPC1510W |
|
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 15A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
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| NCV2393DR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; IB: 1pA
Type of integrated circuit: comparator
Number of comparators: 2
Operating voltage: 2.7...16V
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Application: automotive industry
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 2.7÷16V; SMT; SO8; reel,tape; Iio: 1pA; IB: 1pA
Type of integrated circuit: comparator
Number of comparators: 2
Operating voltage: 2.7...16V
Mounting: SMT
Case: SO8
Operating temperature: -65...150°C
Input offset voltage: 13mV
Kind of package: reel; tape
Input offset current: 1pA
Input bias current: 1pA
Application: automotive industry
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| MC74HCT366ADR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,hex,inverting; Ch: 6; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex; inverting
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
Category: Gates, inverters
Description: IC: digital; 3-state,buffer,hex,inverting; Ch: 6; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex; inverting
Number of channels: 6
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: HCT
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| NXH450B100H4Q2F2PG |
|
Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Electrical mounting: Press-Fit
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Technology: SiC
Semiconductor structure: SiC diode/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Max. off-state voltage: 1kV
Category: IGBT modules
Description: Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Electrical mounting: Press-Fit
Mechanical mounting: screw
Application: for UPS; Inverter
Type of semiconductor module: IGBT
Technology: SiC
Semiconductor structure: SiC diode/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Max. off-state voltage: 1kV
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| 74LCX32MTC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
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| 74LCX32MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
на замовлення 47 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.70 грн |
| 25+ | 17.44 грн |
| 26+ | 16.76 грн |
| MC100EP101FAG |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 4; IN: 16; ECL; SMD; 100EP; -40÷85°C; OUT: 8
Type of integrated circuit: digital
Kind of gate: NOR; OR
Number of channels: 4
Number of inputs: 16
Technology: ECL
Mounting: SMD
Manufacturer series: 100EP
Operating temperature: -40...85°C
Number of outputs: 8
Supply voltage: 3...5.5V
Category: Gates, inverters
Description: IC: digital; NOR,OR; Ch: 4; IN: 16; ECL; SMD; 100EP; -40÷85°C; OUT: 8
Type of integrated circuit: digital
Kind of gate: NOR; OR
Number of channels: 4
Number of inputs: 16
Technology: ECL
Mounting: SMD
Manufacturer series: 100EP
Operating temperature: -40...85°C
Number of outputs: 8
Supply voltage: 3...5.5V
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| FCP400N80Z |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 0.4Ω
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 195W
Drain-source voltage: 800V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; Idm: 33A; 195W; TO220-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 0.4Ω
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 33A
Power dissipation: 195W
Drain-source voltage: 800V
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| SZESD9X5.0ST5G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| SD12CT1G |
|
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 13.3V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 13.3V; 15A; bidirectional; SOD323; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 1539 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.17 грн |
| 20+ | 21.50 грн |
| 24+ | 17.95 грн |
| 100+ | 9.40 грн |
| 500+ | 8.47 грн |
| NC7WZ17P6X |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
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| NC7WZ17P6X-L22347 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Part status: Not recommended for new designs
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; SC70-6; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Part status: Not recommended for new designs
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| MC79M08BDTRKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Manufacturer series: MC79M00
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output voltage: -8V
Output current: 0.5A
Number of channels: 1
Voltage drop: 1.1V
Tolerance: ±4%
Kind of package: reel; tape
Case: DPAK
Kind of voltage regulator: fixed; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -8V; 0.5A; DPAK; SMD; MC79M00
Manufacturer series: MC79M00
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Output voltage: -8V
Output current: 0.5A
Number of channels: 1
Voltage drop: 1.1V
Tolerance: ±4%
Kind of package: reel; tape
Case: DPAK
Kind of voltage regulator: fixed; linear
на замовлення 310 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.00 грн |
| 18+ | 24.72 грн |
| 19+ | 23.03 грн |
| 25+ | 21.08 грн |
| 50+ | 19.89 грн |
| 100+ | 18.96 грн |
| 250+ | 17.86 грн |
| 1N5233B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 4131 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 109+ | 3.89 грн |
| 203+ | 2.09 грн |
| 500+ | 1.46 грн |
| 1000+ | 1.30 грн |
| 1N5235BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 4694 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 120+ | 3.56 грн |
| 253+ | 1.68 грн |
| 300+ | 1.41 грн |
| 309+ | 1.37 грн |
| 1N5230BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 4774 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 129+ | 3.30 грн |
| 169+ | 2.51 грн |
| 242+ | 1.75 грн |
| 280+ | 1.52 грн |
| 500+ | 1.30 грн |
| 1N5237BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5231BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5232B |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5234BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5251BTR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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