| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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NCP699SN25T1G | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.34V Output voltage: 2.5V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: NCP699 Operating temperature: -40...85°C Number of channels: 1 Input voltage: 2.1...6V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP699SN29T1G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.9V; 150mA; SMD; NCP699 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.42V Output voltage: 2.9V Output current: 0.15A Case: SOT23-5; TSOP5 Mounting: SMD Manufacturer series: NCP699 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.1...6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74VHC112MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP16 Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: TSSOP16 Supply voltage: 2...5.5V DC Kind of integrated circuit: JK flip-flop Trigger: negative-edge-triggered Operating temperature: -40...85°C Technology: CMOS Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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74VHC112MTC | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP16; 20uA; tube Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: TSSOP16 Supply voltage: 2...5.5V DC Kind of integrated circuit: JK flip-flop Trigger: negative-edge-triggered Kind of package: tube Operating temperature: -40...85°C Quiescent current: 20µA Technology: CMOS Manufacturer series: VHC |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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74VHC112MX | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; VHC; SMD; SOIC16; VHC Type of integrated circuit: digital Number of channels: 2 Number of inputs: 5 Mounting: SMD Case: SOIC16 Supply voltage: 2...5.5V DC Family: VHC Kind of integrated circuit: JK flip-flop Kind of package: reel; tape Operating temperature: -40...85°C Technology: CMOS Manufacturer series: VHC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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SS23 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 1113 шт: термін постачання 14-30 дні (днів) |
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SS23FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NL17SG32DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Mounting: SMD Case: SC88A Family: NL Kind of package: reel; tape Supply voltage: 0.9...3.6V DC Manufacturer series: MiniGate Operating temperature: -55...125°C Technology: CMOS |
на замовлення 2988 шт: термін постачання 14-30 дні (днів) |
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NC7S32M5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC74A Quiescent current: 10µA Kind of package: reel; tape Supply voltage: 2...6V DC Operating temperature: -40...85°C |
на замовлення 2550 шт: термін постачання 14-30 дні (днів) |
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NC7SZ86M5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC74A Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape |
на замовлення 1854 шт: термін постачання 14-30 дні (днів) |
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NC7S86M5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: XOR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SOT23-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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NCP4306AAAZZZAMN1TBG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP4306AADZZZAMN1TBG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP4306AADZZZAMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC Type of integrated circuit: PMIC Output current: 2...7A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward; resonant LLC Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.5...37V DC |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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df06m | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1.5A Max. forward impulse current: 50A Case: MDIP4L Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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NLV14013BDTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: TSSOP14 Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Trigger: positive-edge-triggered |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SC3647T-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89 Mounting: SMD Collector-emitter voltage: 100V Power dissipation: 1.5W Polarisation: bipolar Type of transistor: NPN Current gain: 200...400 Kind of package: reel; tape Case: SOT89 Frequency: 120MHz Collector current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FCPF220N80 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP Case: TO220FP Drain current: 23A Gate-source voltage: ±20V Power dissipation: 44W Pulsed drain current: 57A Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 78nC On-state resistance: 0.22Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NC7ST08P5X-L22057 | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C Kind of gate: AND Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Case: SC88A Number of channels: single; 1 Operating temperature: -48...85°C Number of inputs: 2 Supply voltage: 4.5...5.5V DC |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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BCP55 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Current gain: 40...250 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMCJ43A | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 50.3V; 200A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 43V Breakdown voltage: 50.3V Max. forward impulse current: 200A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
| UJ3N120070K3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 254W Type of transistor: N-JFET / N-MOSFET Technology: SiC Polarisation: unipolar Kind of transistor: cascode Drain-source voltage: 1.2kV Drain current: 24.5A Pulsed drain current: 85A Power dissipation: 254W Case: TO247-3 Gate-source voltage: -20...20V On-state resistance: 154mΩ Mounting: THT Gate charge: 116nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP154MX180290TAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape Mounting: SMD Kind of package: reel; tape Number of channels: 2 Case: XDFN8 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP154MX280280TAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Case: XDFN8 Mounting: SMD Kind of package: reel; tape Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV8154MN300300TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Mounting: SMD Case: DFN10 Number of channels: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV8154MW120280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Mounting: SMD Case: DFN10 Number of channels: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV8154MW300300TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Mounting: SMD Case: DFN10 Number of channels: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCV8154MW330180TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Mounting: SMD Case: DFN10 Number of channels: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV8154MW330280TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Case: DFN10 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCV8154MW330330TBG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape Mounting: SMD Case: DFN10 Number of channels: 2 Application: automotive industry Kind of package: reel; tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN7527BMX | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; SOIC8 Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -25...125°C Case: SOIC8 |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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ES1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 1A Reverse recovery time: 15ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 0.1mA Kind of package: reel; tape Power dissipation: 1.47W Capacitance: 7pF |
на замовлення 459 шт: термін постачання 14-30 дні (днів) |
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ES1C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Capacitance: 7pF Power dissipation: 1.47W Max. forward impulse current: 30A Max. off-state voltage: 150V Kind of package: reel; tape Case: SMA Features of semiconductor devices: fast switching Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 15ns Leakage current: 0.1mA Max. forward voltage: 0.92V Load current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJE253G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 15W Case: TO225 Current gain: 40...180 Mounting: THT Kind of package: bulk Frequency: 40MHz |
на замовлення 515 шт: термін постачання 14-30 дні (днів) |
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MJE243G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 15W Case: TO225 Current gain: 40...180 Mounting: THT Kind of package: bulk Frequency: 40MHz |
на замовлення 533 шт: термін постачання 14-30 дні (днів) |
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| FDMS86350ET80 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 140A Power dissipation: 187W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMS86150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Power dissipation: 187W Case: PQFN8 On-state resistance: 9.1mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FDMC86324 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 20A Power dissipation: 41W Case: PQFN8 On-state resistance: 40mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Technology: PowerTrench® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDMS0306AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8 Pulsed drain current: 100A Power dissipation: 59W Gate charge: 57nC Polarisation: unipolar Drain current: 49A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PQFN8 On-state resistance: 3.3mΩ Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTTFS1D2N02P1E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 180A; Idm: 195A; 52W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 180A Pulsed drain current: 195A Power dissipation: 52W Case: PQFN8 On-state resistance: 1mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMS4D5N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 80V; 116A; 113.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 80V Drain current: 116A Power dissipation: 113.6W Case: PQFN8 Gate-source voltage: 20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 71nC Kind of channel: enhancement Technology: PowerTrench® |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FDMT1D3N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 103A Pulsed drain current: 864A Power dissipation: 178W Case: PQFN8 On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFSC012N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 80A Pulsed drain current: 1067A Power dissipation: 58W Case: PQFN8 On-state resistance: 11.4mΩ Mounting: SMD Gate charge: 32.4nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FDMC3020DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Power dissipation: 50W Case: PQFN8 On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMC4D9P20X8 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -47A Pulsed drain current: -335A Power dissipation: 40W Case: PQFN8 On-state resistance: 16.4mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±12V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMC7570S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 40A Pulsed drain current: 120A Power dissipation: 59W Case: PQFN8 On-state resistance: 2.9mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCS20074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 2.4V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 1.5nA Input offset current: 75pA |
на замовлення 2423 шт: термін постачання 14-30 дні (днів) |
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NCV20074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Case: TSSOP14 Operating temperature: -40...125°C Slew rate: 2.4V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 1.5nA Input offset current: 75pA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCS20074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Kind of package: reel; tape Mounting: SMT Type of integrated circuit: operational amplifier Number of channels: quad; 4 Integrated circuit features: rail-to-rail output Case: TSSOP14 Operating temperature: -40...125°C Input offset current: 75pA Input bias current: 1.5nA Input offset voltage: 3mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.4V/μs Bandwidth: 3MHz |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCV20074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 3MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 2.4V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 1.5nA Input offset current: 75pA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRS410LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 10V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.225V Kind of package: reel; tape |
на замовлення 883 шт: термін постачання 14-30 дні (днів) |
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FDLL300A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW Type of diode: switching Case: SOD80 Mounting: SMD Max. off-state voltage: 125V Load current: 0.5A Semiconductor structure: single diode Capacitance: 6pF Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: reel; tape Power dissipation: 0.5W Max. load current: 0.6A |
на замовлення 1221 шт: термін постачання 14-30 дні (днів) |
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FNB41560 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Mounting: THT Frequency: 20kHz Number of channels: 6 Power dissipation: 34W Operating voltage: 13.5...16.5/0...400V DC Kind of integrated circuit: 3-phase motor controller; IPM Collector-emitter voltage: 600V Technology: Motion SPM® 45 Case: SPMAA-A26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Operating temperature: -40...125°C Output current: 15A |
на замовлення 49 шт: термін постачання 14-30 дні (днів) |
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FDD4243 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK Mounting: SMD Power dissipation: 42W Gate charge: 29nC Polarisation: unipolar Technology: PowerTrench® Drain current: -14A Kind of channel: enhancement Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK On-state resistance: 69mΩ |
на замовлення 1585 шт: термін постачання 14-30 дні (днів) |
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NCS20071SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC Type of integrated circuit: operational amplifier Case: TSOP5 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 4.5mV Voltage supply range: ± 1.35...18V DC; 2.7...36V DC Slew rate: 2.8V/μs Bandwidth: 3MHz Integrated circuit features: rail-to-rail output Number of channels: single; 1 |
на замовлення 2181 шт: термін постачання 14-30 дні (днів) |
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| NTTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Case: WDFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Case: WDFN8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFWS002N04CLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8 Case: WDFNW8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 49nC On-state resistance: 2.2mΩ Gate-source voltage: ±20V Power dissipation: 27W Drain current: 142A Drain-source voltage: 40V Pulsed drain current: 706A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| NCP699SN25T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP699
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.1...6V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.34V
Output voltage: 2.5V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP699
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 2.1...6V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP699SN29T1G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.9V; 150mA; SMD; NCP699
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 2.9V
Output current: 0.15A
Case: SOT23-5; TSOP5
Mounting: SMD
Manufacturer series: NCP699
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.1...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.9V; 150mA; SMD; NCP699
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 2.9V
Output current: 0.15A
Case: SOT23-5; TSOP5
Mounting: SMD
Manufacturer series: NCP699
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.1...6V
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC112MTCX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP16
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Operating temperature: -40...85°C
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP16
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Operating temperature: -40...85°C
Technology: CMOS
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
| 74VHC112MTC |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP16; 20uA; tube
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; CMOS; VHC; SMD; TSSOP16; 20uA; tube
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Supply voltage: 2...5.5V DC
Kind of integrated circuit: JK flip-flop
Trigger: negative-edge-triggered
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 20µA
Technology: CMOS
Manufacturer series: VHC
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| 74VHC112MX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; VHC; SMD; SOIC16; VHC
Type of integrated circuit: digital
Number of channels: 2
Number of inputs: 5
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Family: VHC
Kind of integrated circuit: JK flip-flop
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
Manufacturer series: VHC
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; VHC; SMD; SOIC16; VHC
Type of integrated circuit: digital
Number of channels: 2
Number of inputs: 5
Mounting: SMD
Case: SOIC16
Supply voltage: 2...5.5V DC
Family: VHC
Kind of integrated circuit: JK flip-flop
Kind of package: reel; tape
Operating temperature: -40...85°C
Technology: CMOS
Manufacturer series: VHC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SS23 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 1113 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.75 грн |
| 26+ | 16.59 грн |
| 29+ | 14.83 грн |
| 50+ | 11.48 грн |
| 100+ | 11.31 грн |
| SS23FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NL17SG32DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Family: NL
Kind of package: reel; tape
Supply voltage: 0.9...3.6V DC
Manufacturer series: MiniGate
Operating temperature: -55...125°C
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Family: NL
Kind of package: reel; tape
Supply voltage: 0.9...3.6V DC
Manufacturer series: MiniGate
Operating temperature: -55...125°C
Technology: CMOS
на замовлення 2988 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.65 грн |
| 36+ | 11.73 грн |
| 45+ | 9.45 грн |
| 52+ | 8.11 грн |
| 100+ | 6.90 грн |
| 250+ | 5.63 грн |
| 281+ | 3.41 грн |
| 772+ | 3.23 грн |
| NC7S32M5X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Quiescent current: 10µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC74A; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Quiescent current: 10µA
Kind of package: reel; tape
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
на замовлення 2550 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 53+ | 8.55 грн |
| 74+ | 5.71 грн |
| 89+ | 4.76 грн |
| 110+ | 3.81 грн |
| 140+ | 3.01 грн |
| 250+ | 2.73 грн |
| 362+ | 2.66 грн |
| 500+ | 2.64 грн |
| 994+ | 2.50 грн |
| NC7SZ86M5X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC74A
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
на замовлення 1854 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.92 грн |
| 55+ | 7.71 грн |
| 100+ | 6.87 грн |
| 250+ | 6.45 грн |
| 1000+ | 6.03 грн |
| NC7S86M5X |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 1; IN: 2; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 451.11 грн |
| NCP4306AAAZZZAMN1TBG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP4306AADZZZAMN1TBG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP4306AADZZZAMNTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| df06m |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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Мінімальне замовлення: 3 шт
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| NLV14013BDTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; SMD; TSSOP14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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| 2SC3647T-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Kind of package: reel; tape
Case: SOT89
Frequency: 120MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Mounting: SMD
Collector-emitter voltage: 100V
Power dissipation: 1.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...400
Kind of package: reel; tape
Case: SOT89
Frequency: 120MHz
Collector current: 2A
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| FCPF220N80 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP
Case: TO220FP
Drain current: 23A
Gate-source voltage: ±20V
Power dissipation: 44W
Pulsed drain current: 57A
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 78nC
On-state resistance: 0.22Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 23A; Idm: 57A; 44W; TO220FP
Case: TO220FP
Drain current: 23A
Gate-source voltage: ±20V
Power dissipation: 44W
Pulsed drain current: 57A
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 78nC
On-state resistance: 0.22Ω
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| NC7ST08P5X-L22057 |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Kind of gate: AND
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
Operating temperature: -48...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 4.5÷5.5VDC; -48÷85°C
Kind of gate: AND
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
Operating temperature: -48...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 14.53 грн |
| 60+ | 8.29 грн |
| 100+ | 7.04 грн |
| 500+ | 6.12 грн |
| 3000+ | 5.70 грн |
| BCP55 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
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| SMCJ43A |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50.3V; 200A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 50.3V
Max. forward impulse current: 200A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 50.3V; 200A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 50.3V
Max. forward impulse current: 200A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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Мінімальне замовлення: 3 шт
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| UJ3N120070K3S |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 254W
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 24.5A
Pulsed drain current: 85A
Power dissipation: 254W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 254W
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Kind of transistor: cascode
Drain-source voltage: 1.2kV
Drain current: 24.5A
Pulsed drain current: 85A
Power dissipation: 254W
Case: TO247-3
Gate-source voltage: -20...20V
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
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| NCP154MX180290TAG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: XDFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Case: XDFN8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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| NCP154MX280280TAG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Case: XDFN8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
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| NCV8154MN300300TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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| NCV8154MW120280TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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| NCV8154MW300300TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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| NCV8154MW330180TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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| NCV8154MW330280TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Case: DFN10
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Case: DFN10
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Application: automotive industry
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| NCV8154MW330330TBG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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| FAN7527BMX |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; SOIC8
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -25...125°C
Case: SOIC8
Category: Drivers - integrated circuits
Description: IC: PMIC; SOIC8
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -25...125°C
Case: SOIC8
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.87 грн |
| ES1B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Power dissipation: 1.47W
Capacitance: 7pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 0.1mA
Kind of package: reel; tape
Power dissipation: 1.47W
Capacitance: 7pF
на замовлення 459 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.38 грн |
| 22+ | 19.69 грн |
| 50+ | 13.74 грн |
| 100+ | 11.90 грн |
| 126+ | 7.62 грн |
| 346+ | 7.20 грн |
| ES1C |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 150V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Leakage current: 0.1mA
Max. forward voltage: 0.92V
Load current: 1A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Power dissipation: 1.47W
Max. forward impulse current: 30A
Max. off-state voltage: 150V
Kind of package: reel; tape
Case: SMA
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Leakage current: 0.1mA
Max. forward voltage: 0.92V
Load current: 1A
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| MJE253G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
на замовлення 515 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 76.69 грн |
| 10+ | 43.31 грн |
| 50+ | 37.70 грн |
| 100+ | 29.24 грн |
| 250+ | 26.81 грн |
| 500+ | 26.22 грн |
| MJE243G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
на замовлення 533 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 73.08 грн |
| 12+ | 36.11 грн |
| 35+ | 27.98 грн |
| 95+ | 26.47 грн |
| 200+ | 25.47 грн |
| FDMS86350ET80 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86150 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Power dissipation: 187W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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| FDMC86324 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
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| FDMS0306AS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Pulsed drain current: 100A
Power dissipation: 59W
Gate charge: 57nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 3.3mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Pulsed drain current: 100A
Power dissipation: 59W
Gate charge: 57nC
Polarisation: unipolar
Drain current: 49A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PQFN8
On-state resistance: 3.3mΩ
Mounting: SMD
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| NTTFS1D2N02P1E |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; Idm: 195A; 52W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Pulsed drain current: 195A
Power dissipation: 52W
Case: PQFN8
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 180A; Idm: 195A; 52W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 180A
Pulsed drain current: 195A
Power dissipation: 52W
Case: PQFN8
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS4D5N08LC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 116A; 113.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 116A
Power dissipation: 113.6W
Case: PQFN8
Gate-source voltage: 20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 80V; 116A; 113.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 80V
Drain current: 116A
Power dissipation: 113.6W
Case: PQFN8
Gate-source voltage: 20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhancement
Technology: PowerTrench®
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Мінімальне замовлення: 3000 шт
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| FDMT1D3N08B |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 864A
Power dissipation: 178W
Case: PQFN8
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 864A; 178W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 864A
Power dissipation: 178W
Case: PQFN8
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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| NTMFSC012N15MC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 80A
Pulsed drain current: 1067A
Power dissipation: 58W
Case: PQFN8
On-state resistance: 11.4mΩ
Mounting: SMD
Gate charge: 32.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 80A
Pulsed drain current: 1067A
Power dissipation: 58W
Case: PQFN8
On-state resistance: 11.4mΩ
Mounting: SMD
Gate charge: 32.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FDMC3020DC |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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| FDMC4D9P20X8 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
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| FDMC7570S |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Pulsed drain current: 120A
Power dissipation: 59W
Case: PQFN8
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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| NCS20074DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
на замовлення 2423 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.21 грн |
| 12+ | 35.02 грн |
| 14+ | 31.25 грн |
| 25+ | 26.39 грн |
| 50+ | 23.46 грн |
| 100+ | 22.54 грн |
| NCV20074DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: TSSOP14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
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| NCS20074DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Kind of package: reel; tape
Mounting: SMT
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Integrated circuit features: rail-to-rail output
Case: TSSOP14
Operating temperature: -40...125°C
Input offset current: 75pA
Input bias current: 1.5nA
Input offset voltage: 3mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.4V/μs
Bandwidth: 3MHz
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Мінімальне замовлення: 2500 шт
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| NCV20074DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 4; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 1.5nA
Input offset current: 75pA
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| MBRS410LT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 10V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 10V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.225V
Kind of package: reel; tape
на замовлення 883 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 120.00 грн |
| 6+ | 78.75 грн |
| FDLL300A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
Category: SMD universal diodes
Description: Diode: switching; SMD; 125V; 0.5A; SOD80; Ufmax: 1V; Ifsm: 4A; 500mW
Type of diode: switching
Case: SOD80
Mounting: SMD
Max. off-state voltage: 125V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 6pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.6A
на замовлення 1221 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.22 грн |
| 66+ | 6.37 грн |
| 78+ | 5.43 грн |
| 100+ | 4.99 грн |
| 500+ | 3.97 грн |
| 1000+ | 3.54 грн |
| FNB41560 |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Mounting: THT
Frequency: 20kHz
Number of channels: 6
Power dissipation: 34W
Operating voltage: 13.5...16.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Collector-emitter voltage: 600V
Technology: Motion SPM® 45
Case: SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Operating temperature: -40...125°C
Output current: 15A
на замовлення 49 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1258.60 грн |
| 3+ | 1055.60 грн |
| 12+ | 942.50 грн |
| 24+ | 811.81 грн |
| FDD4243 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Mounting: SMD
Power dissipation: 42W
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 69mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; 42W; DPAK
Mounting: SMD
Power dissipation: 42W
Gate charge: 29nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -14A
Kind of channel: enhancement
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 69mΩ
на замовлення 1585 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.03 грн |
| 8+ | 58.31 грн |
| 10+ | 49.60 грн |
| 29+ | 33.43 грн |
| 79+ | 31.58 грн |
| 250+ | 30.41 грн |
| NCS20071SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 1; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Case: TSOP5
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 4.5mV
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Slew rate: 2.8V/μs
Bandwidth: 3MHz
Integrated circuit features: rail-to-rail output
Number of channels: single; 1
на замовлення 2181 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.80 грн |
| 16+ | 26.39 грн |
| 25+ | 24.71 грн |
| NTTFS002N04CLTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
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Мінімальне замовлення: 1500 шт
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| NTTFS002N04CTAG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1500 шт
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од. на суму грн.
| NVTFS002N04CLTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Case: WDFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
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| NVTFS002N04CTAG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS002N04CLTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Case: WDFNW8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFNW8
Case: WDFNW8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 49nC
On-state resistance: 2.2mΩ
Gate-source voltage: ±20V
Power dissipation: 27W
Drain current: 142A
Drain-source voltage: 40V
Pulsed drain current: 706A
Kind of package: reel; tape
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В кошику
од. на суму грн.