| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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| SZMMSZ6V8T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMA3023PZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6 Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Drain current: -2.9A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: WDFN6 On-state resistance: 0.14Ω |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| MJD3055T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MJD3055RLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJVMJD3055T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FPF2495CUCX | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C Kind of package: reel; tape Active logical level: high Case: WLCSP9 Type of integrated circuit: power switch Mounting: SMD Operating temperature: -40...85°C On-state resistance: 0.1Ω Number of channels: 1 Supply voltage: 2.5...5.5V DC Output current: 2.2A Integrated circuit features: thermal protection; undervoltage protection |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FPF2495UCX | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; SMD; reel,tape Type of integrated circuit: power switch Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| DTC144EM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC144TET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Manufacturer standard package: 3000pcs. Current gain: 120...300 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC144TM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 120...300 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4148TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; reel,tape; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 1A Case: DO35 Kind of package: reel; tape Max. forward voltage: 1V Reverse recovery time: 4ns Power dissipation: 0.5W Capacitance: 4pF |
на замовлення 10364 шт: термін постачання 14-30 дні (днів) |
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NCP3335AMN330R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN10; SMD Mounting: SMD Case: DFN10 Number of channels: 2 Operating temperature: -40...85°C Output current: 0.5A Voltage drop: 0.34V Output voltage: 3.3V Tolerance: ±1.5% Input voltage: 2.6...12V Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP3335A |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| NCP5603MNR2G | ONSEMI |
Category: LED driversDescription: IC: driver; LED driver; DFN10; 350mA; 4.275÷4.725V,4.75÷5.25V Mounting: SMD Case: DFN10 Operating temperature: -40...85°C Output current: 0.35A Output voltage: 4.275...4.725V; 4.75...5.25V Input voltage: 2.85...5.5V Type of integrated circuit: driver Frequency: 210...320kHz; 0.5...1MHz Kind of integrated circuit: LED driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP1589AMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DFN10; buck; 4.5÷13.2VDC Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: 0...70°C Output current: 1.5A Operating voltage: 4.5...13.2V DC Type of integrated circuit: PMIC Frequency: 270...330kHz Topology: buck |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP1589BMNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DFN10; buck; 4.5÷13.2VDC Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: 0...70°C Output current: 1.5A Operating voltage: 4.5...13.2V DC Type of integrated circuit: PMIC Frequency: 540...660kHz Topology: buck |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP1589DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DFN10; buck; 4.5÷13.2VDC Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: 0...95°C Output current: 1.5A Operating voltage: 4.5...13.2V DC Type of integrated circuit: PMIC Frequency: 200...500kHz Topology: buck |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP51530BMNTWG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V Mounting: SMD Case: DFN10 Operating temperature: -40...125°C Output current: -3...3.5A Pulse fall time: 15ns Impulse rise time: 15ns Supply voltage: 10...17V DC Voltage class: 700V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Pulsed drain current: 9A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2132 шт: термін постачання 14-30 дні (днів) |
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LM2576D2TR4-012G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
на замовлення 23 шт: термін постачання 14-30 дні (днів) |
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1N5927BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 12V; CASE59; single diode; reel,tape; 1N59xxB Mounting: THT Manufacturer series: 1N59xxB Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE59 Zener voltage: 12V Type of diode: Zener Tolerance: ±5% |
на замовлення 5300 шт: термін постачання 14-30 дні (днів) |
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MMSZ5266BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode Mounting: SMD Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Zener Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 68V Manufacturer series: MMSZ52xxB |
на замовлення 694 шт: термін постачання 14-30 дні (днів) |
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| NTMJS0D9N04CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NVMFS5C410NLAFT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Gate charge: 143nC Drain current: 330A Kind of channel: enhancement Drain-source voltage: 40V Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5 On-state resistance: 820µΩ Pulsed drain current: 900A Power dissipation: 83W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMJS0D9N04CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 330A Pulsed drain current: 900A Power dissipation: 83W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 820µΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC14528BDG | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Number of inputs: 3 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: tube |
на замовлення 177 шт: термін постачання 14-30 дні (днів) |
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74VHC123AMTCX | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC |
на замовлення 2090 шт: термін постачання 14-30 дні (днів) |
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74VHC123AMX | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Operating temperature: -40...85°C Case: SO16 Kind of integrated circuit: monostable; multivibrator Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3082M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC3082SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 800V Kind of output: zero voltage crossing driver Case: Gull wing 6 Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M |
на замовлення 206 шт: термін постачання 14-30 дні (днів) |
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| MOC3082SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MOC3082SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MOC3082SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube Conform to the norm: VDE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MOC3082TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube Conform to the norm: VDE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MOC3082VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3082M Kind of package: tube Conform to the norm: VDE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCV72 | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
| NRVBB40L45CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.68V Max. load current: 20A Max. forward impulse current: 200A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSS40501UW3T2G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry Mounting: SMD Collector-emitter voltage: 40V Power dissipation: 1.5W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Kind of package: reel; tape Case: WDFN3 Frequency: 150MHz Collector current: 5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSS40500UW3T2G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry Mounting: SMD Collector-emitter voltage: 40V Power dissipation: 1.5W Polarisation: bipolar Application: automotive industry Type of transistor: PNP Kind of package: reel; tape Case: WDFN3 Collector current: 5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRS3100T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 0.62V Max. off-state voltage: 0.1kV Load current: 3A |
на замовлення 2295 шт: термін постачання 14-30 дні (днів) |
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FDS4470 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 161 шт: термін постачання 14-30 дні (днів) |
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MBRF2545CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube Mounting: THT Type of diode: Schottky rectifying Max. forward voltage: 0.62V Max. off-state voltage: 45V Load current: 12.5A x2 Max. load current: 25A Max. forward impulse current: 150A Case: TO220FP Kind of package: tube Semiconductor structure: common cathode; double |
на замовлення 591 шт: термін постачання 14-30 дні (днів) |
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SS39 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 90V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 2735 шт: термін постачання 14-30 дні (днів) |
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SBAT54CTT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SC70 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common cathode; double Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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FDS2582 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 146mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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| FDMS86202 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 64A Pulsed drain current: 240A Power dissipation: 156W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMS86202ET120 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 120V Drain current: 72A Pulsed drain current: 538A Power dissipation: 187W Case: Power56 Gate-source voltage: ±20V On-state resistance: 13.2mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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H11G2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Mounting: THT Number of channels: 1 Collector-emitter voltage: 80V CTR@If: 100%@10mA Insulation voltage: 4.17kV Case: DIP6 Kind of output: Darlington Type of optocoupler: optocoupler |
на замовлення 267 шт: термін постачання 14-30 дні (днів) |
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MJF45H11G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP Case: TO220FP Mounting: THT Collector-emitter voltage: 80V Power dissipation: 50W Polarisation: bipolar Type of transistor: PNP Current gain: 60 Kind of package: tube Frequency: 40MHz Collector current: 10A |
на замовлення 87 шт: термін постачання 14-30 дні (днів) |
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H11G1SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Case: Gull wing 6 Collector-emitter voltage: 100V CTR@If: 100%@10mA |
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В кошику од. на суму грн. | ||||||||||||||||||
| H11G2SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Manufacturer series: H11G_ Mounting: THT Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 80V CTR@If: 1000%@10mA Insulation voltage: 4.17kV Case: PDIP6 Kind of output: Darlington Type of optocoupler: optocoupler Turn-on time: 5µs Turn-off time: 0.1ms |
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В кошику од. на суму грн. | |||||||||||||||||||
| MJB45H11G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Power dissipation: 50W Current gain: 60 Collector-emitter voltage: 80V Polarisation: bipolar Case: D2PAK Type of transistor: PNP Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modulesDescription: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 900V Drain current: 149A Case: PIM20 Topology: NTC thermistor; Vienna Rectifier Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 447A Power dissipation: 352W Technology: SiC Gate-source voltage: -8...18V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||||||
| NXH003P120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB Case: PIM36 Pulsed drain current: 700A Type of semiconductor module: MOSFET transistor Power dissipation: 979W Technology: SiC Drain current: 350A Drain-source voltage: 1.2kV Mechanical mounting: screw Electrical mounting: Press-in PCB Gate-source voltage: -10...22V Kind of package: in-tray Semiconductor structure: transistor/transistor On-state resistance: 5.88mΩ Topology: MOSFET half-bridge |
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Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH004P120M3F2PTNG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 7.5mΩ Drain current: 338A Pulsed drain current: 676A Drain-source voltage: 1.2kV Power dissipation: 1098W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH003P120M3F2PTNG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 5.88mΩ Drain current: 435A Pulsed drain current: 870A Drain-source voltage: 1.2kV Power dissipation: 1482W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH006P120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 14.6mΩ Drain current: 191A Pulsed drain current: 382A Drain-source voltage: 1.2kV Power dissipation: 556W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH004P120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -10...22V On-state resistance: 7.5mΩ Drain current: 284A Pulsed drain current: 568A Drain-source voltage: 1.2kV Power dissipation: 785W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH006P120MNF2PTG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM36 Gate-source voltage: -15...25V On-state resistance: 7.28mΩ Drain current: 304A Pulsed drain current: 912A Drain-source voltage: 1.2kV Power dissipation: 950W Topology: MOSFET half-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH007F120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM34 Gate-source voltage: -10...22V On-state resistance: 15.9mΩ Drain current: 149A Pulsed drain current: 447A Drain-source voltage: 1.2kV Power dissipation: 353W Topology: H-bridge Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | |||||||||||||||||||
| NXH008T120M3F2PTHG | ONSEMI |
Category: Transistor modulesDescription: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM29 Gate-source voltage: -10...22V On-state resistance: 15mΩ Drain current: 127A Pulsed drain current: 387A Drain-source voltage: 1.2kV Power dissipation: 371W Topology: 3-level inverter TNPC Kind of package: in-tray |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. |
| SZMMSZ6V8T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| FDMA3023PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 0.14Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; 1.4W; WDFN6
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: WDFN6
On-state resistance: 0.14Ω
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| MJD3055T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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| MJD3055RLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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| NJVMJD3055T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Application: automotive industry
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од. на суму грн.
| FPF2495CUCX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C
Kind of package: reel; tape
Active logical level: high
Case: WLCSP9
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Number of channels: 1
Supply voltage: 2.5...5.5V DC
Output current: 2.2A
Integrated circuit features: thermal protection; undervoltage protection
Category: Power switches - integrated circuits
Description: IC: power switch; 2.2A; Ch: 1; SMD; WLCSP9; reel,tape; -40÷85°C
Kind of package: reel; tape
Active logical level: high
Case: WLCSP9
Type of integrated circuit: power switch
Mounting: SMD
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Number of channels: 1
Supply voltage: 2.5...5.5V DC
Output current: 2.2A
Integrated circuit features: thermal protection; undervoltage protection
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| FPF2495UCX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: power switch; SMD; reel,tape
Type of integrated circuit: power switch
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| DTC144EM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
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| DTC144TET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 120...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 3000pcs.
Current gain: 120...300
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| DTC144TM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 120...300
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 120...300
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| 1N4148TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; reel,tape; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 1A
Case: DO35
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Capacitance: 4pF
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; Ifsm: 1A; DO35; reel,tape; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 1A
Case: DO35
Kind of package: reel; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.5W
Capacitance: 4pF
на замовлення 10364 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.46 грн |
| 114+ | 3.77 грн |
| 219+ | 1.96 грн |
| 500+ | 1.28 грн |
| 1000+ | 1.09 грн |
| 2000+ | 0.94 грн |
| 2500+ | 0.90 грн |
| 5000+ | 0.81 грн |
| 10000+ | 0.73 грн |
| NCP3335AMN330R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN10; SMD
Mounting: SMD
Case: DFN10
Number of channels: 2
Operating temperature: -40...85°C
Output current: 0.5A
Voltage drop: 0.34V
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.6...12V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP3335A
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN10; SMD
Mounting: SMD
Case: DFN10
Number of channels: 2
Operating temperature: -40...85°C
Output current: 0.5A
Voltage drop: 0.34V
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 2.6...12V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP3335A
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 86.70 грн |
| 7+ | 68.52 грн |
| 10+ | 60.81 грн |
| 25+ | 53.10 грн |
| NCP5603MNR2G |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; DFN10; 350mA; 4.275÷4.725V,4.75÷5.25V
Mounting: SMD
Case: DFN10
Operating temperature: -40...85°C
Output current: 0.35A
Output voltage: 4.275...4.725V; 4.75...5.25V
Input voltage: 2.85...5.5V
Type of integrated circuit: driver
Frequency: 210...320kHz; 0.5...1MHz
Kind of integrated circuit: LED driver
Category: LED drivers
Description: IC: driver; LED driver; DFN10; 350mA; 4.275÷4.725V,4.75÷5.25V
Mounting: SMD
Case: DFN10
Operating temperature: -40...85°C
Output current: 0.35A
Output voltage: 4.275...4.725V; 4.75...5.25V
Input voltage: 2.85...5.5V
Type of integrated circuit: driver
Frequency: 210...320kHz; 0.5...1MHz
Kind of integrated circuit: LED driver
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| NCP1589AMNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 270...330kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 270...330kHz
Topology: buck
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCP1589BMNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 540...660kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...70°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 540...660kHz
Topology: buck
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NCP1589DMNTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...95°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 200...500kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN10; buck; 4.5÷13.2VDC
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: 0...95°C
Output current: 1.5A
Operating voltage: 4.5...13.2V DC
Type of integrated circuit: PMIC
Frequency: 200...500kHz
Topology: buck
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Мінімальне замовлення: 3000 шт
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| NCP51530BMNTWG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Mounting: SMD
Case: DFN10
Operating temperature: -40...125°C
Output current: -3...3.5A
Pulse fall time: 15ns
Impulse rise time: 15ns
Supply voltage: 10...17V DC
Voltage class: 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side,gate driver; DFN10; -3÷3.5A; 700V
Mounting: SMD
Case: DFN10
Operating temperature: -40...125°C
Output current: -3...3.5A
Pulse fall time: 15ns
Impulse rise time: 15ns
Supply voltage: 10...17V DC
Voltage class: 700V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
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| NTF3055L108T1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2132 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.64 грн |
| 11+ | 42.05 грн |
| 50+ | 35.71 грн |
| 100+ | 33.66 грн |
| 200+ | 31.52 грн |
| 250+ | 30.75 грн |
| 500+ | 27.58 грн |
| 1000+ | 26.81 грн |
| LM2576D2TR4-012G |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 178.94 грн |
| 10+ | 139.60 грн |
| 1N5927BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; reel,tape; 1N59xxB
Mounting: THT
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 12V
Type of diode: Zener
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; CASE59; single diode; reel,tape; 1N59xxB
Mounting: THT
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 12V
Type of diode: Zener
Tolerance: ±5%
на замовлення 5300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 32.28 грн |
| 23+ | 18.84 грн |
| 28+ | 15.33 грн |
| 100+ | 9.34 грн |
| 250+ | 8.56 грн |
| MMSZ5266BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 68V
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 68V; SMD; SOD123; reel,tape; single diode
Mounting: SMD
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 68V
Manufacturer series: MMSZ52xxB
на замовлення 694 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.53 грн |
| 120+ | 3.60 грн |
| 129+ | 3.34 грн |
| 172+ | 2.50 грн |
| 500+ | 1.97 грн |
| NTMJS0D9N04CLTWG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| NVMFS5C410NLAFT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Gate charge: 143nC
Drain current: 330A
Kind of channel: enhancement
Drain-source voltage: 40V
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 820µΩ
Pulsed drain current: 900A
Power dissipation: 83W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Gate charge: 143nC
Drain current: 330A
Kind of channel: enhancement
Drain-source voltage: 40V
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 820µΩ
Pulsed drain current: 900A
Power dissipation: 83W
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| NVMJS0D9N04CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; Idm: 900A; 83W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Pulsed drain current: 900A
Power dissipation: 83W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 820µΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC14528BDG |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: tube
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: tube
на замовлення 177 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.50 грн |
| 13+ | 34.52 грн |
| 25+ | 28.61 грн |
| 48+ | 25.52 грн |
| 96+ | 23.04 грн |
| 144+ | 21.93 грн |
| 74VHC123AMTCX |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
на замовлення 2090 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 30.44 грн |
| 19+ | 23.47 грн |
| 25+ | 22.27 грн |
| 100+ | 20.64 грн |
| 250+ | 19.53 грн |
| 500+ | 18.67 грн |
| 1000+ | 17.90 грн |
| 74VHC123AMX |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Case: SO16
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Case: SO16
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
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| MOC3082M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
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| MOC3082SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 800V; zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 800V
Kind of output: zero voltage crossing driver
Case: Gull wing 6
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 71.02 грн |
| 11+ | 42.74 грн |
| 50+ | 39.91 грн |
| MOC3082SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
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| MOC3082SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: reel; tape
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| MOC3082SVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
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| MOC3082TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
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| MOC3082VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3082M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3082M
Kind of package: tube
Conform to the norm: VDE
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| BCV72 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
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Мінімальне замовлення: 10 шт
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| NRVBB40L45CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. load current: 20A
Max. forward impulse current: 200A
Kind of package: reel; tape
Application: automotive industry
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| NSS40501UW3T2G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Kind of package: reel; tape
Case: WDFN3
Frequency: 150MHz
Collector current: 5A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Kind of package: reel; tape
Case: WDFN3
Frequency: 150MHz
Collector current: 5A
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| NSS40500UW3T2G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Kind of package: reel; tape
Case: WDFN3
Collector current: 5A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 5A; 1.5W; WDFN3; automotive industry
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Kind of package: reel; tape
Case: WDFN3
Collector current: 5A
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| MBRS3100T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.62V
Max. off-state voltage: 0.1kV
Load current: 3A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 0.62V
Max. off-state voltage: 0.1kV
Load current: 3A
на замовлення 2295 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.74 грн |
| 18+ | 24.67 грн |
| 20+ | 22.10 грн |
| 50+ | 18.16 грн |
| 100+ | 17.22 грн |
| 500+ | 15.50 грн |
| 1000+ | 14.30 грн |
| FDS4470 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 161 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.13 грн |
| 5+ | 106.20 грн |
| 25+ | 94.21 грн |
| 100+ | 86.50 грн |
| MBRF2545CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 150A
Case: TO220FP
Kind of package: tube
Semiconductor structure: common cathode; double
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220FP; tube
Mounting: THT
Type of diode: Schottky rectifying
Max. forward voltage: 0.62V
Max. off-state voltage: 45V
Load current: 12.5A x2
Max. load current: 25A
Max. forward impulse current: 150A
Case: TO220FP
Kind of package: tube
Semiconductor structure: common cathode; double
на замовлення 591 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.62 грн |
| 5+ | 100.21 грн |
| 10+ | 79.65 грн |
| 50+ | 68.52 грн |
| SS39 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 2735 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.42 грн |
| 10+ | 45.74 грн |
| 11+ | 42.65 грн |
| 25+ | 38.37 грн |
| 100+ | 31.78 грн |
| 250+ | 30.75 грн |
| SBAT54CTT1G |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC70; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SC70
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common cathode; double
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| FDS2582 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.29 грн |
| FDMS86202 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 64A; Idm: 240A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 64A
Pulsed drain current: 240A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86202ET120 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 72A; Idm: 538A; 187W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 72A
Pulsed drain current: 538A
Power dissipation: 187W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 13.2mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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| H11G2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Mounting: THT
Number of channels: 1
Collector-emitter voltage: 80V
CTR@If: 100%@10mA
Insulation voltage: 4.17kV
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 57.19 грн |
| 11+ | 40.94 грн |
| 13+ | 34.17 грн |
| 25+ | 29.03 грн |
| MJF45H11G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Case: TO220FP
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 50W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 60
Kind of package: tube
Frequency: 40MHz
Collector current: 10A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Case: TO220FP
Mounting: THT
Collector-emitter voltage: 80V
Power dissipation: 50W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 60
Kind of package: tube
Frequency: 40MHz
Collector current: 10A
на замовлення 87 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 142.96 грн |
| 5+ | 106.20 грн |
| 10+ | 81.36 грн |
| H11G1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
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| H11G2SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Manufacturer series: H11G_
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 80V
CTR@If: 1000%@10mA
Insulation voltage: 4.17kV
Case: PDIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Turn-on time: 5µs
Turn-off time: 0.1ms
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| MJB45H11G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Power dissipation: 50W
Current gain: 60
Collector-emitter voltage: 80V
Polarisation: bipolar
Case: D2PAK
Type of transistor: PNP
Kind of package: tube
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| NXH020U90MNF2PTG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH003P120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Case: PIM36
Pulsed drain current: 700A
Type of semiconductor module: MOSFET transistor
Power dissipation: 979W
Technology: SiC
Drain current: 350A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
On-state resistance: 5.88mΩ
Topology: MOSFET half-bridge
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 350A; PIM36; Press-in PCB
Case: PIM36
Pulsed drain current: 700A
Type of semiconductor module: MOSFET transistor
Power dissipation: 979W
Technology: SiC
Drain current: 350A
Drain-source voltage: 1.2kV
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Gate-source voltage: -10...22V
Kind of package: in-tray
Semiconductor structure: transistor/transistor
On-state resistance: 5.88mΩ
Topology: MOSFET half-bridge
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Мінімальне замовлення: 20 шт
В кошику
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| NXH004P120M3F2PTNG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH003P120M3F2PTNG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 435A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 5.88mΩ
Drain current: 435A
Pulsed drain current: 870A
Drain-source voltage: 1.2kV
Power dissipation: 1482W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
В кошику
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| NXH006P120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 191A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 14.6mΩ
Drain current: 191A
Pulsed drain current: 382A
Drain-source voltage: 1.2kV
Power dissipation: 556W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH004P120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH006P120MNF2PTG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 304A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -15...25V
On-state resistance: 7.28mΩ
Drain current: 304A
Pulsed drain current: 912A
Drain-source voltage: 1.2kV
Power dissipation: 950W
Topology: MOSFET half-bridge
Kind of package: in-tray
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Мінімальне замовлення: 20 шт
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| NXH007F120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 149A; PIM34; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM34
Gate-source voltage: -10...22V
On-state resistance: 15.9mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 1.2kV
Power dissipation: 353W
Topology: H-bridge
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.
| NXH008T120M3F2PTHG |
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Виробник: ONSEMI
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
Category: Transistor modules
Description: Module; transistor/transistor; 1.2kV; 127A; PIM29; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM29
Gate-source voltage: -10...22V
On-state resistance: 15mΩ
Drain current: 127A
Pulsed drain current: 387A
Drain-source voltage: 1.2kV
Power dissipation: 371W
Topology: 3-level inverter TNPC
Kind of package: in-tray
товару немає в наявності
Мінімальне замовлення: 20 шт
В кошику
од. на суму грн.























