| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FDD390N15ALZ | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 26A Pulsed drain current: 104A Power dissipation: 63W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 17.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
MJE243G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 15W Case: TO225 Current gain: 40...180 Mounting: THT Frequency: 40MHz Kind of package: bulk |
на замовлення 180 шт: термін постачання 21-30 дні (днів) |
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| SL05T1G | ONSEMI |
Category: Diodes - others Description: Diode: TVS+FRD; 5V; 300W; SOT23; Ifsm: 17A; reel,tape; Ir: 20uA Case: SOT23 Mounting: SMD Kind of package: reel; tape Breakdown voltage: 6...8V Max. forward impulse current: 17A Max. off-state voltage: 5V Type of diode: TVS+FRD Features of semiconductor devices: snubber diode Leakage current: 20µA Peak pulse power dissipation: 0.3kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SZSL05T1G | ONSEMI |
Category: Diodes - others Description: Diode: TVS+FRD; 5V; 300W; SOT23; Ifsm: 17A; reel,tape; Ir: 20uA Case: SOT23 Mounting: SMD Kind of package: reel; tape Breakdown voltage: 6...8V Max. forward impulse current: 17A Application: automotive industry Max. off-state voltage: 5V Type of diode: TVS+FRD Features of semiconductor devices: snubber diode Leakage current: 20µA Peak pulse power dissipation: 0.3kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| 2SA1416S-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| 2SA1416T-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
D44H8G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 50W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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BC858BWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
ES1C | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A Mounting: SMD Capacitance: 7pF Max. off-state voltage: 150V Max. forward voltage: 0.92V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 15ns Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 1.47W Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: fast switching Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| NTMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MBR760 | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220-2; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 7.5A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 0.72V Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MBR150RLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape Max. forward voltage: 1V Max. forward impulse current: 25A |
товару немає в наявності |
В кошику од. на суму грн. |
| FDD390N15ALZ |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 26A; Idm: 104A; 63W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 26A
Pulsed drain current: 104A
Power dissipation: 63W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 17.6nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MJE243G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Frequency: 40MHz
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 40...180
Mounting: THT
Frequency: 40MHz
Kind of package: bulk
на замовлення 180 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.50 грн |
| 10+ | 44.98 грн |
| 36+ | 25.67 грн |
| 97+ | 24.29 грн |
| SL05T1G |
|
Виробник: ONSEMI
Category: Diodes - others
Description: Diode: TVS+FRD; 5V; 300W; SOT23; Ifsm: 17A; reel,tape; Ir: 20uA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 6...8V
Max. forward impulse current: 17A
Max. off-state voltage: 5V
Type of diode: TVS+FRD
Features of semiconductor devices: snubber diode
Leakage current: 20µA
Peak pulse power dissipation: 0.3kW
Category: Diodes - others
Description: Diode: TVS+FRD; 5V; 300W; SOT23; Ifsm: 17A; reel,tape; Ir: 20uA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 6...8V
Max. forward impulse current: 17A
Max. off-state voltage: 5V
Type of diode: TVS+FRD
Features of semiconductor devices: snubber diode
Leakage current: 20µA
Peak pulse power dissipation: 0.3kW
товару немає в наявності
В кошику
од. на суму грн.
| SZSL05T1G |
|
Виробник: ONSEMI
Category: Diodes - others
Description: Diode: TVS+FRD; 5V; 300W; SOT23; Ifsm: 17A; reel,tape; Ir: 20uA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 6...8V
Max. forward impulse current: 17A
Application: automotive industry
Max. off-state voltage: 5V
Type of diode: TVS+FRD
Features of semiconductor devices: snubber diode
Leakage current: 20µA
Peak pulse power dissipation: 0.3kW
Category: Diodes - others
Description: Diode: TVS+FRD; 5V; 300W; SOT23; Ifsm: 17A; reel,tape; Ir: 20uA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Breakdown voltage: 6...8V
Max. forward impulse current: 17A
Application: automotive industry
Max. off-state voltage: 5V
Type of diode: TVS+FRD
Features of semiconductor devices: snubber diode
Leakage current: 20µA
Peak pulse power dissipation: 0.3kW
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1416S-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1416T-TD-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| D44H8G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
на замовлення 450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 99.86 грн |
| 10+ | 50.58 грн |
| 23+ | 39.47 грн |
| 63+ | 37.32 грн |
| BC858BWT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| ES1C |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Max. off-state voltage: 150V
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Case: SMA
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS024N06CT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MBR760 |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220-2; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 0.72V
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5A; TO220-2; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 0.72V
Max. forward impulse current: 150A
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| MBR150RLG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1V
Max. forward impulse current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 1A; DO41; Ufmax: 1V; reel,tape
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Max. forward voltage: 1V
Max. forward impulse current: 25A
товару немає в наявності
В кошику
од. на суму грн.