| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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NTJD4105CT2G | onsemi |
 Description: MOSFET N/P-CH 20V/8V 0.63A SC88Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Drain to Source Voltage (Vdss): 20V, 8V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTJD4105CT4G | onsemi |
Description: MOSFET N/P-CH 20V/8V 0.63A SC88 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA Drain to Source Voltage (Vdss): 20V, 8V Power - Max: 270mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTJD4158CT1G | onsemi |
Description: MOSFET N/P-CH 30V/20V 0.25A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NTJD4401NT2G | onsemi |
Description: MOSFET 2N-CH 20V 0.63A SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTJD4401NT4 | onsemi |
Description: MOSFET 2N-CH 20V 0.63A SC88 Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Current - Continuous Drain (Id) @ 25°C: 630mA Drain to Source Voltage (Vdss): 20V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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NTJD4401NT4G | onsemi |
Description: MOSFET 2N-CH 20V 0.63A SC88 Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Current - Continuous Drain (Id) @ 25°C: 630mA Drain to Source Voltage (Vdss): 20V Power - Max: 270mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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NTJS3151PT2 | onsemi |
Description: MOSFET P-CH 12V 2.7A SC88/SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1.2V @ 100µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTJS3157NT1G | onsemi |
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NTJS3157NT2 | onsemi |
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTJS3157NT2G | onsemi |
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTJS3157NT4 | onsemi |
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTJS3157NT4G | onsemi |
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTJS4405NT1 | onsemi |
Description: MOSFET N-CH 25V 1A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTJS4405NT4 | onsemi |
Description: MOSFET N-CH 25V 1A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTJS4405NT4G | onsemi |
Description: MOSFET N-CH 25V 1A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTK3043NT1G | onsemi |
Description: MOSFET N-CH 20V 210MA SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210mA (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-723 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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NTLJD3115PT1G | onsemi |
Description: MOSFET 2P-CH 20V 2.3A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTLJF4156NT1G | onsemi |
Description: MOSFET N-CH 30V 2.5A 6WDFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: 6-WDFN (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 710mW (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTLJS4159NT1G | onsemi |
Description: MOSFET N-CH 30V 3.6A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMD6P02R2SG | onsemi |
Description: MOSFET 2P-CH 20V 4.8A 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMFS4121NT1G | onsemi |
Description: MOSFET N-CH 30V 11A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 5.25mOhm @ 24A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 24 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTMFS4122NT1G | onsemi |
Description: MOSFET N-CH 30V 9.1A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
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NTMFS4122NT3G | onsemi |
Description: MOSFET N-CH 30V 9.1A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||
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NTMFS4701NT1G | onsemi |
Description: MOSFET N-CH 30V 7.7A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
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NTMFS4707NT1G | onsemi |
Description: MOSFET N-CH 30V 6.9A 5DFN |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
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NTMS4107NR2G | onsemi |
Description: MOSFET N-CH 30V 11A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V Power Dissipation (Max): 930mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| NTP2955G | onsemi |
Description: MOSFET P-CH 60V 2.4A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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NTP75N03-6G | onsemi |
Description: MOSFET N-CH 30V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTP85N03G | onsemi |
Description: MOSFET N-CH 28V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 28 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTQD6968N | onsemi |
Description: MOSFET 2N-CH 20V 6.2A 8TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTR2101PT1 | onsemi |
Description: MOSFET P-CH 8V 3.7A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 4 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 8 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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NTR4501NT3 | onsemi |
Description: MOSFET N-CH 20V 3.2A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Tj) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTR4501NT3G | onsemi |
Description: MOSFET N-CH 20V 3.2A SOT23-3 Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Tj) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTR4502PT1 | onsemi |
Description: MOSFET P-CH 30V 1.13A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 400mW (Tj) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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NTR4502PT1G | onsemi |
Description: MOSFET P-CH 30V 1.13A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V Power Dissipation (Max): 400mW (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V |
на замовлення 4676 шт: термін постачання 21-31 дні (днів) |
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NTR4502PT3 | onsemi |
Description: MOSFET P-CH 30V 1.13A SOT23-3 Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 400mW (Tj) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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NTR4502PT3G | onsemi |
Description: MOSFET P-CH 30V 1.13A SOT23-3 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 400mW (Tj) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTR4503NT1 | onsemi |
Description: MOSFET N-CH 30V 1.5A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTR4503NT3 | onsemi |
Description: MOSFET N-CH 30V 1.5A SOT23-3 Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 420mW (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTR4503NT3G | onsemi |
Description: MOSFET N-CH 30V 1.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 420mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTS2101PT1 | onsemi |
Description: MOSFET P-CH 8V 1.4A SC70-3 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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NTS4101PT1 | onsemi |
Description: MOSFET P-CH 20V 1.37A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V Power Dissipation (Max): 329mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-70-3 (SOT323) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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NTS4409NT1G | onsemi |
Description: MOSFET N-CH 25V 700MA SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V Power Dissipation (Max): 280mW (Tj) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-3 (SOT323) Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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NTTD4401FR2G | onsemi |
Description: MOSFET P-CH 20V 2.4A MICRO8 Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTZD3152PT5G | onsemi |
Description: MOSFET 2P-CH 20V 0.43A SOT-563 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTZD3154NT5G | onsemi |
Description: MOSFET 2N-CH 20V 0.54A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Last Time Buy |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTZD3155CT2G | onsemi |
Description: MOSFET N/P-CH 20V 0.54A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||
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NTZD3155CT5G | onsemi |
Description: MOSFET N/P-CH 20V 0.54A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NTZS3151PT5G | onsemi |
Description: MOSFET P-CH 20V 860MA SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 170mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NUD4011DR2G | onsemi |
Description: IC LED DRVR LIN PWM 70MA 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 198V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Current - Output / Channel: 70mA Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Max): 200V Grade: Automotive Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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NUF2015W1T2G | onsemi |
Description: FILTER RC(PI) 15 OHMS ESD SMD Number of Channels: 3 Part Status: Obsolete ESD Protection: Yes Resistance - Channel (Ohms): 15 Technology: RC (Pi) Applications: USB Filter Order: 2nd Height: 0.043" (1.09mm) Values: R = 15Ohms, C = 42pF Operating Temperature: -55°C ~ 125°C Type: Low Pass Mounting Type: Surface Mount Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NUF2030XV6T1G | onsemi |
Description: FILTER RC(PI) 22 OHM/30PF SMD Number of Channels: 3 ESD Protection: Yes Resistance - Channel (Ohms): 22 Technology: RC (Pi) Applications: USB Filter Order: 2nd Height: 0.024" (0.60mm) Values: R = 22Ohms, C = 30pF (Total) Operating Temperature: -55°C ~ 125°C Type: Low Pass Mounting Type: Surface Mount Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NUF2042XV6T1 | onsemi |
Description: FILTER RC(PI) 22 OHMS ESD SMD Number of Channels: 3 ESD Protection: Yes Resistance - Channel (Ohms): 22 Technology: RC (Pi) Applications: USB Filter Order: 2nd Height: 0.024" (0.60mm) Values: R = 22Ohms, C = 42pF (Total) Operating Temperature: -55°C ~ 125°C Type: Low Pass Mounting Type: Surface Mount Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||
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NUF2042XV6T1G | onsemi |
Description: FILTER RC(PI) 22 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -55°C ~ 125°C Values: R = 22Ohms, C = 42pF (Total) Height: 0.024" (0.60mm) Filter Order: 2nd Applications: USB Technology: RC (Pi) Resistance - Channel (Ohms): 22 ESD Protection: Yes Part Status: Active Number of Channels: 2 |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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NUF2114MNT1G | onsemi |
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD Packaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 9Ohms, C = 60pF Height: 0.039" (1.00mm) Attenuation Value: -30dB @ 900MHz ~ 3GHz Filter Order: 2nd Applications: Audio Technology: RC (Pi) Center / Cutoff Frequency: 50MHz (Cutoff) Resistance - Channel (Ohms): 9 ESD Protection: Yes Part Status: Active Number of Channels: 2 |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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NUF2116MNT1G | onsemi |
Description: FILTER RC(PI) 64 OHM/50PF SMD Center / Cutoff Frequency: 55MHz (Cutoff) Technology: RC (Pi) Applications: Audio Filter Order: 2nd Attenuation Value: -35dB @ 800MHz ~ 3GHz Height: 0.039" (1.00mm) Values: R = 64Ohms, C = 50pF Operating Temperature: -40°C ~ 85°C Type: Low Pass Mounting Type: Surface Mount Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm) Package / Case: 8-VFDFN Exposed Pad Packaging: Tape & Reel (TR) Number of Channels: 2 ESD Protection: Yes Resistance - Channel (Ohms): 64 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NUF2222FCT1G | onsemi |
Description: FILTER RC(PI) 33 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 8-WFBGA, FCBGA Size / Dimension: 0.050" L x 0.078" W (1.27mm x 1.97mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 33Ohms, C = 36pF Height: 0.028" (0.70mm) Attenuation Value: -20dB @ 900MHz ~ 3GHz Filter Order: 2nd Applications: USB Technology: RC (Pi) Center / Cutoff Frequency: 190MHz (Cutoff) Resistance - Channel (Ohms): 33 ESD Protection: Yes Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NUF2230XV6T1 | onsemi |
Description: FILTER RC(PI) 100 OHM/16PF SMD Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 16pF Height: 0.024" (0.60mm) Attenuation Value: -30dB @ 800MHz ~ 900MHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 125MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NUF2230XV6T1G | onsemi |
Description: FILTER RC(PI) 100 OHM/16PF SMD Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 16pF Height: 0.024" (0.60mm) Attenuation Value: -30dB @ 800MHz ~ 900MHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 125MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 2 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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NUF2240W1T1 | onsemi |
Description: FILTER RC(PI) 100 OHM/17PF SMD Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 17pF Height: 0.043" (1.09mm) Attenuation Value: -20dB @ 800MHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 125MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. |
| NTJD4105CT2G |
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Виробник: onsemi
Description: MOSFET N/P-CH 20V/8V 0.63A SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Drain to Source Voltage (Vdss): 20V, 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 20V/8V 0.63A SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Drain to Source Voltage (Vdss): 20V, 8V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.88 грн |
| NTJD4105CT4G |
|
Виробник: onsemi
Description: MOSFET N/P-CH 20V/8V 0.63A SC88
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Drain to Source Voltage (Vdss): 20V, 8V
Power - Max: 270mW
Description: MOSFET N/P-CH 20V/8V 0.63A SC88
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 775mA
Drain to Source Voltage (Vdss): 20V, 8V
Power - Max: 270mW
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| NTJD4158CT1G |
|
Виробник: onsemi
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.20 грн |
| 6000+ | 5.41 грн |
| NTJD4401NT2G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.63A SOT363
Description: MOSFET 2N-CH 20V 0.63A SOT363
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В кошику
од. на суму грн.
| NTJD4401NT4 |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.63A SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 0.63A SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 10000 шт
В кошику
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| NTJD4401NT4G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.63A SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 0.63A SC88
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 630mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 270mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| NTJS3151PT2 |
|
Виробник: onsemi
Description: MOSFET P-CH 12V 2.7A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 2.7A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1.2V @ 100µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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| NTJS3157NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.95 грн |
| 6000+ | 7.86 грн |
| NTJS3157NT2 |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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| NTJS3157NT2G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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| NTJS3157NT4 |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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| NTJS3157NT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
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| NTJS4405NT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 1A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 25V 1A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
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| NTJS4405NT4 |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 1A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 25V 1A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
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| NTJS4405NT4G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 1A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 25V 1A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
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| NTK3043NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 210MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V
Description: MOSFET N-CH 20V 210MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 10mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.65V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11 pF @ 10 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 4.12 грн |
| 8000+ | 3.58 грн |
| NTLJD3115PT1G |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.60 грн |
| NTLJF4156NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 2.5A 6WDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 710mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
Description: MOSFET N-CH 30V 2.5A 6WDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 710mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 15.89 грн |
| 6000+ | 14.53 грн |
| NTLJS4159NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 15 V
Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1045 pF @ 15 V
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| NTMD6P02R2SG |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 4.8A 8SOIC
Description: MOSFET 2P-CH 20V 4.8A 8SOIC
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В кошику
од. на суму грн.
| NTMFS4121NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 11A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 5.25mOhm @ 24A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 24 V
Description: MOSFET N-CH 30V 11A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 5.25mOhm @ 24A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 24 V
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од. на суму грн.
| NTMFS4122NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 9.1A 5DFN
Description: MOSFET N-CH 30V 9.1A 5DFN
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NTMFS4122NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 9.1A 5DFN
Description: MOSFET N-CH 30V 9.1A 5DFN
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| NTMFS4701NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 7.7A 5DFN
Description: MOSFET N-CH 30V 7.7A 5DFN
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NTMFS4707NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 6.9A 5DFN
Description: MOSFET N-CH 30V 6.9A 5DFN
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NTMS4107NR2G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Description: MOSFET N-CH 30V 11A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
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од. на суму грн.
| NTP2955G |
Виробник: onsemi
Description: MOSFET P-CH 60V 2.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET P-CH 60V 2.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 196mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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од. на суму грн.
| NTP75N03-6G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V
Description: MOSFET N-CH 30V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5635 pF @ 25 V
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од. на суму грн.
| NTP85N03G |
|
Виробник: onsemi
Description: MOSFET N-CH 28V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 40A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 28 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V
Description: MOSFET N-CH 28V 85A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 40A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 28 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 24 V
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| NTQD6968N |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
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| NTR2101PT1 |
|
Виробник: onsemi
Description: MOSFET P-CH 8V 3.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 8V 3.7A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 4 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 8 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NTR4501NT3 |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 3.2A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| NTR4501NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 3.2A SOT23-3
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Description: MOSFET N-CH 20V 3.2A SOT23-3
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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| NTR4502PT1 |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 1.13A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 400mW (Tj)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 1.13A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 400mW (Tj)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| NTR4502PT1G |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 1.13A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V
Power Dissipation (Max): 400mW (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V
Description: MOSFET P-CH 30V 1.13A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V
Power Dissipation (Max): 400mW (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V
на замовлення 4676 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.29 грн |
| 17+ | 17.80 грн |
| 100+ | 11.25 грн |
| 500+ | 7.90 грн |
| 1000+ | 7.04 грн |
| NTR4502PT3 |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 1.13A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 400mW (Tj)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET P-CH 30V 1.13A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 400mW (Tj)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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Мінімальне замовлення: 10000 шт
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| NTR4502PT3G |
|
Виробник: onsemi
Description: MOSFET P-CH 30V 1.13A SOT23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 400mW (Tj)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET P-CH 30V 1.13A SOT23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 400mW (Tj)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.95A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
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| NTR4503NT1 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 1.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 1.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| NTR4503NT3 |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 1.5A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 30V 1.5A SOT23-3
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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| NTR4503NT3G |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 1.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
Description: MOSFET N-CH 30V 1.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 24 V
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| NTS2101PT1 |
|
Виробник: onsemi
Description: MOSFET P-CH 8V 1.4A SC70-3
Description: MOSFET P-CH 8V 1.4A SC70-3
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NTS4101PT1 |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 1.37A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 329mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
Description: MOSFET P-CH 20V 1.37A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.37A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1A, 4.5V
Power Dissipation (Max): 329mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| NTS4409NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 25V 700MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Description: MOSFET N-CH 25V 700MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.46 грн |
| 6000+ | 7.42 грн |
| NTTD4401FR2G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 2.4A MICRO8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
Description: MOSFET P-CH 20V 2.4A MICRO8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.3A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 16 V
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| NTZD3152PT5G |
|
Виробник: onsemi
Description: MOSFET 2P-CH 20V 0.43A SOT-563
Description: MOSFET 2P-CH 20V 0.43A SOT-563
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| NTZD3154NT5G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Last Time Buy
Description: MOSFET 2N-CH 20V 0.54A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Last Time Buy
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| NTZD3155CT2G |
|
Виробник: onsemi
Description: MOSFET N/P-CH 20V 0.54A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET N/P-CH 20V 0.54A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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Мінімальне замовлення: 4000 шт
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| NTZD3155CT5G |
|
Виробник: onsemi
Description: MOSFET N/P-CH 20V 0.54A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Obsolete
Description: MOSFET N/P-CH 20V 0.54A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Part Status: Obsolete
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| NTZS3151PT5G |
|
Виробник: onsemi
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 170mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
Description: MOSFET P-CH 20V 860MA SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 170mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
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| NUD4011DR2G |
|
Виробник: onsemi
Description: IC LED DRVR LIN PWM 70MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 198V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 70mA
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 200V
Grade: Automotive
Part Status: Active
Description: IC LED DRVR LIN PWM 70MA 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 198V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 70mA
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 200V
Grade: Automotive
Part Status: Active
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Мінімальне замовлення: 2500 шт
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| NUF2015W1T2G |
|
Виробник: onsemi
Description: FILTER RC(PI) 15 OHMS ESD SMD
Number of Channels: 3
Part Status: Obsolete
ESD Protection: Yes
Resistance - Channel (Ohms): 15
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Height: 0.043" (1.09mm)
Values: R = 15Ohms, C = 42pF
Operating Temperature: -55°C ~ 125°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: FILTER RC(PI) 15 OHMS ESD SMD
Number of Channels: 3
Part Status: Obsolete
ESD Protection: Yes
Resistance - Channel (Ohms): 15
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Height: 0.043" (1.09mm)
Values: R = 15Ohms, C = 42pF
Operating Temperature: -55°C ~ 125°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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| NUF2030XV6T1G |
|
Виробник: onsemi
Description: FILTER RC(PI) 22 OHM/30PF SMD
Number of Channels: 3
ESD Protection: Yes
Resistance - Channel (Ohms): 22
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Height: 0.024" (0.60mm)
Values: R = 22Ohms, C = 30pF (Total)
Operating Temperature: -55°C ~ 125°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: FILTER RC(PI) 22 OHM/30PF SMD
Number of Channels: 3
ESD Protection: Yes
Resistance - Channel (Ohms): 22
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Height: 0.024" (0.60mm)
Values: R = 22Ohms, C = 30pF (Total)
Operating Temperature: -55°C ~ 125°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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| NUF2042XV6T1 |
|
Виробник: onsemi
Description: FILTER RC(PI) 22 OHMS ESD SMD
Number of Channels: 3
ESD Protection: Yes
Resistance - Channel (Ohms): 22
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Height: 0.024" (0.60mm)
Values: R = 22Ohms, C = 42pF (Total)
Operating Temperature: -55°C ~ 125°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: FILTER RC(PI) 22 OHMS ESD SMD
Number of Channels: 3
ESD Protection: Yes
Resistance - Channel (Ohms): 22
Technology: RC (Pi)
Applications: USB
Filter Order: 2nd
Height: 0.024" (0.60mm)
Values: R = 22Ohms, C = 42pF (Total)
Operating Temperature: -55°C ~ 125°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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| NUF2042XV6T1G |
|
Виробник: onsemi
Description: FILTER RC(PI) 22 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
Description: FILTER RC(PI) 22 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 14.08 грн |
| 8000+ | 12.76 грн |
| NUF2114MNT1G |
|
Виробник: onsemi
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 9Ohms, C = 60pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 50MHz (Cutoff)
Resistance - Channel (Ohms): 9
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 9Ohms, C = 60pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 50MHz (Cutoff)
Resistance - Channel (Ohms): 9
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 27.81 грн |
| 6000+ | 25.19 грн |
| 9000+ | 24.30 грн |
| 15000+ | 21.80 грн |
| 21000+ | 21.16 грн |
| NUF2116MNT1G |
|
Виробник: onsemi
Description: FILTER RC(PI) 64 OHM/50PF SMD
Center / Cutoff Frequency: 55MHz (Cutoff)
Technology: RC (Pi)
Applications: Audio
Filter Order: 2nd
Attenuation Value: -35dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 64Ohms, C = 50pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Package / Case: 8-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Channels: 2
ESD Protection: Yes
Resistance - Channel (Ohms): 64
Description: FILTER RC(PI) 64 OHM/50PF SMD
Center / Cutoff Frequency: 55MHz (Cutoff)
Technology: RC (Pi)
Applications: Audio
Filter Order: 2nd
Attenuation Value: -35dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 64Ohms, C = 50pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Package / Case: 8-VFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Number of Channels: 2
ESD Protection: Yes
Resistance - Channel (Ohms): 64
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| NUF2222FCT1G |
|
Виробник: onsemi
Description: FILTER RC(PI) 33 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.050" L x 0.078" W (1.27mm x 1.97mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 33Ohms, C = 36pF
Height: 0.028" (0.70mm)
Attenuation Value: -20dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Center / Cutoff Frequency: 190MHz (Cutoff)
Resistance - Channel (Ohms): 33
ESD Protection: Yes
Number of Channels: 2
Description: FILTER RC(PI) 33 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.050" L x 0.078" W (1.27mm x 1.97mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 33Ohms, C = 36pF
Height: 0.028" (0.70mm)
Attenuation Value: -20dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Center / Cutoff Frequency: 190MHz (Cutoff)
Resistance - Channel (Ohms): 33
ESD Protection: Yes
Number of Channels: 2
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| NUF2230XV6T1 |
|
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF
Height: 0.024" (0.60mm)
Attenuation Value: -30dB @ 800MHz ~ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 125MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
Description: FILTER RC(PI) 100 OHM/16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF
Height: 0.024" (0.60mm)
Attenuation Value: -30dB @ 800MHz ~ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 125MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
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| NUF2230XV6T1G |
|
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF
Height: 0.024" (0.60mm)
Attenuation Value: -30dB @ 800MHz ~ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 125MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
Description: FILTER RC(PI) 100 OHM/16PF SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 16pF
Height: 0.024" (0.60mm)
Attenuation Value: -30dB @ 800MHz ~ 900MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 125MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 9.07 грн |
| NUF2240W1T1 |
|
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/17PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.043" (1.09mm)
Attenuation Value: -20dB @ 800MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 125MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
Description: FILTER RC(PI) 100 OHM/17PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.043" (1.09mm)
Attenuation Value: -20dB @ 800MHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 125MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 2
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