Продукція > ONSEMI > Всі товари виробника ONSEMI (134706) > Сторінка 412 з 2246

Обрати Сторінку:   [  << Попередня Сторінка ]  1 224 407 408 409 410 411 412 413 414 415 416 417 448 672 896 1120 1344 1568 1792 2016 2240 2246  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
2SK3708 2SK3708 onsemi 2SK3708.pdf Description: MOSFET N-CH 100V 30A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
товар відсутній
2SJ656 2SJ656 onsemi 2SJ656.pdf Description: MOSFET P-CH 100V 18A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 75.5mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
товар відсутній
2SC6082 2SC6082 onsemi ena0279-d.pdf Description: TRANS NPN 50V 15A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товар відсутній
2SK4125 2SK4125 onsemi 869-1070.jpg Description: MOSFET N-CH 600V 17A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
ATP102-TL-H ATP102-TL-H onsemi atp102-d.pdf Description: MOSFET P-CH 30V 40A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
товар відсутній
ATP104-TL-H ATP104-TL-H onsemi atp104-d.pdf Description: MOSFET P-CH 30V 75A ATPAK
товар відсутній
ATP113-TL-H ATP113-TL-H onsemi Description: MOSFET P-CH 60V 35A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
товар відсутній
ATP202-TL-H ATP202-TL-H onsemi atp202-d.pdf Description: MOSFET N-CH 30V 50A ATPAK
товар відсутній
ATP203-TL-H ATP203-TL-H onsemi mosfets?documentNotFound=3&documentId=62789 Description: MOSFET N-CH 30V 75A ATPAK
товар відсутній
ATP204-TL-H ATP204-TL-H onsemi mosfets?documentNotFound=3&documentId=62819 Description: MOSFET N-CH 30V 100A ATPAK
товар відсутній
ATP301-TL-H ATP301-TL-H onsemi atp301-d.pdf Description: MOSFET P-CH 100V 28A ATPAK
товар відсутній
ATP404-TL-H ATP404-TL-H onsemi ATP404.pdf Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V
товар відсутній
ATP405-TL-H ATP405-TL-H onsemi 869-1073.jpg Description: MOSFET N-CH 100V 40A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
товар відсутній
ATP602-TL-H ATP602-TL-H onsemi mosfets?documentNotFound=3&documentId=62923 Description: MOSFET N-CH 600V 5A ATPAK
товар відсутній
2SK3557-7-TB-E 2SK3557-7-TB-E onsemi 2sk3557-d.pdf Description: JFET N-CH 5V 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V
товар відсутній
2SK3666-3-TB-E 2SK3666-3-TB-E onsemi ONSMS38239-1.pdf?t.download=true&u=5oefqw Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
товар відсутній
CPH3145-TL-E CPH3145-TL-E onsemi cph3145_cph3245-d.pdf Description: TRANS PNP 50V 2A 3CPH
товар відсутній
CPH5905G-TL-E CPH5905G-TL-E onsemi cph5905-d.pdf Description: TRANS NPN/MOSFET N-CH CPH5
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V NPN, 15V N-Channel
Package / Case: SOT-23-5 Thin, TSOT-23-5
Current Rating (Amps): 150mA NPN, 50mA N-Channel
Mounting Type: Surface Mount
Transistor Type: NPN, N-Channel
Applications: General Purpose
Supplier Device Package: 5-CPH
товар відсутній
CPH6123-TL-E CPH6123-TL-E onsemi en7386-d.pdf Description: TRANS PNP 50V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: 6-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товар відсутній
ECH8654-TL-H ECH8654-TL-H onsemi ena0981-d.pdf Description: MOSFET 2P-CH 20V 5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
товар відсутній
ECH8655R-TL-H ECH8655R-TL-H onsemi ech8655r-d.pdf Description: MOSFET 2N-CH 24V 9A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+20 грн
Мінімальне замовлення: 3000
MCH3475-TL-E MCH3475-TL-E onsemi mch3475-d.pdf Description: MOSFET N-CH 30V 1.8A SC70
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: SC-70FL/MCPH3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
товар відсутній
SBE805-TL-E SBE805-TL-E onsemi en7291-d.pdf Description: DIODE ARR SCHOTT 30V 500MA 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
товар відсутній
SBS811-TL-E SBS811-TL-E onsemi SBS811.pdf Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-VEC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
товар відсутній
SBX201C-TB-E SBX201C-TB-E onsemi ena0628-d.pdf Description: DIODE ARRAY SCHOTTKY 2V 50MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 3-CP
Current - Max: 50 mA
товар відсутній
SCH2825-TL-E SCH2825-TL-E onsemi SCH2825.pdf Description: MOSFET N-CH 30V 1.6A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
товар відсутній
ATP102-TL-H ATP102-TL-H onsemi atp102-d.pdf Description: MOSFET P-CH 30V 40A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
товар відсутній
ATP104-TL-H ATP104-TL-H onsemi atp104-d.pdf Description: MOSFET P-CH 30V 75A ATPAK
товар відсутній
ATP113-TL-H ATP113-TL-H onsemi Description: MOSFET P-CH 60V 35A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
товар відсутній
ATP202-TL-H ATP202-TL-H onsemi atp202-d.pdf Description: MOSFET N-CH 30V 50A ATPAK
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
5+69.67 грн
10+ 59.97 грн
Мінімальне замовлення: 5
ATP203-TL-H ATP203-TL-H onsemi mosfets?documentNotFound=3&documentId=62789 Description: MOSFET N-CH 30V 75A ATPAK
товар відсутній
ATP204-TL-H ATP204-TL-H onsemi mosfets?documentNotFound=3&documentId=62819 Description: MOSFET N-CH 30V 100A ATPAK
товар відсутній
ATP301-TL-H ATP301-TL-H onsemi atp301-d.pdf Description: MOSFET P-CH 100V 28A ATPAK
товар відсутній
ATP404-TL-H ATP404-TL-H onsemi ATP404.pdf Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V
товар відсутній
ATP405-TL-H ATP405-TL-H onsemi 869-1073.jpg Description: MOSFET N-CH 100V 40A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
на замовлення 2784 шт:
термін постачання 21-31 дні (днів)
3+115.88 грн
10+ 93.03 грн
100+ 74.06 грн
500+ 58.81 грн
1000+ 49.9 грн
Мінімальне замовлення: 3
ATP602-TL-H ATP602-TL-H onsemi mosfets?documentNotFound=3&documentId=62923 Description: MOSFET N-CH 600V 5A ATPAK
товар відсутній
2SK3557-7-TB-E 2SK3557-7-TB-E onsemi 2sk3557-d.pdf Description: JFET N-CH 5V 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V
товар відсутній
2SK3666-3-TB-E 2SK3666-3-TB-E onsemi ONSMS38239-1.pdf?t.download=true&u=5oefqw Description: JFET N-CH 10MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
товар відсутній
CPH3145-TL-E CPH3145-TL-E onsemi cph3145_cph3245-d.pdf Description: TRANS PNP 50V 2A 3CPH
товар відсутній
CPH6123-TL-E CPH6123-TL-E onsemi en7386-d.pdf Description: TRANS PNP 50V 3A 6CPH
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: 6-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товар відсутній
ECH8654-TL-H ECH8654-TL-H onsemi ena0981-d.pdf Description: MOSFET 2P-CH 20V 5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
6+54.03 грн
10+ 45.59 грн
100+ 34.93 грн
Мінімальне замовлення: 6
ECH8655R-TL-H ECH8655R-TL-H onsemi ech8655r-d.pdf Description: MOSFET 2N-CH 24V 9A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
6+51.9 грн
10+ 43.81 грн
100+ 33.61 грн
500+ 24.93 грн
1000+ 19.94 грн
Мінімальне замовлення: 6
SBE805-TL-E SBE805-TL-E onsemi en7291-d.pdf Description: DIODE ARR SCHOTT 30V 500MA 5CPH
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
товар відсутній
SBS811-TL-E SBS811-TL-E onsemi SBS811.pdf Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-VEC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
товар відсутній
SBX201C-TB-E SBX201C-TB-E onsemi ena0628-d.pdf Description: DIODE ARRAY SCHOTTKY 2V 50MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 3-CP
Current - Max: 50 mA
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
11+26.3 грн
14+ 20.47 грн
100+ 13.94 грн
Мінімальне замовлення: 11
FSB50550U FSB50550U onsemi Description: IC SMART POWER MOD 2A SPM22-AD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 2 A
Voltage: 500 V
товар відсутній
FCPF13N60NT FCPF13N60NT onsemi fcpf13n60nt-d.pdf Description: MOSFET N-CH 600V 13A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 258mOhm @ 6.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 100 V
товар відсутній
QRE1113 QRE1113 onsemi qre1113-d.pdf Description: SENSOR REFL 1MM PHOTOTRANS THRU
Packaging: Tube
Package / Case: 4-DIP (0.157", 4.00mm)
Output Type: Phototransistor
Sensing Distance: 0.039" (1mm)
Sensing Method: Reflective
Mounting Type: Through Hole
Response Time: 20µs, 20µs
Part Status: Active
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 461 шт:
термін постачання 21-31 дні (днів)
3+108.77 грн
10+ 78.66 грн
25+ 62.93 грн
160+ 54.14 грн
Мінімальне замовлення: 3
FSBB20CH60CL FSBB20CH60CL onsemi FSBB20CH60CL.pdf Description: SMART POWER MODULE 20A SPM27-CB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
товар відсутній
FDP030N06 FDP030N06 onsemi fdp030n06-d.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
1+302.85 грн
50+ 231.14 грн
100+ 198.12 грн
500+ 165.26 грн
FDI030N06 FDI030N06 onsemi fdi030n06-d.pdf Description: MOSFET N-CH 60V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
товар відсутній
FAN5646UC01X FAN5646UC01X onsemi FAN5646.pdf Description: IC LED DRVR LIN PWM 20MA 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: 4-WLCSP (0.82x0.82)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
FDMC15N06 FDMC15N06 onsemi fdmc15n06-d.pdf Description: MOSFET N-CH 55V 2.4A/15A 8MLP
товар відсутній
SB1245 SB1245 onsemi sb1245-d.pdf Description: DIODE SCHOTTKY 45V 12A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
FDB029N06 FDB029N06 onsemi fdb029n06-d.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
800+294.03 грн
1600+ 246.61 грн
2400+ 237.47 грн
Мінімальне замовлення: 800
FDB029N06 FDB029N06 onsemi fdb029n06-d.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
1+451.42 грн
10+ 392.74 грн
100+ 325.16 грн
FDMC15N06 FDMC15N06 onsemi fdmc15n06-d.pdf Description: MOSFET N-CH 55V 2.4A/15A 8MLP
товар відсутній
SB1245 SB1245 onsemi sb1245-d.pdf Description: DIODE SCHOTTKY 45V 12A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
FAN5646UC01X FAN5646UC01X onsemi FAN5646.pdf Description: IC LED DRVR LIN PWM 20MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: 4-WLCSP (0.82x0.82)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
CAT28F010HR-12T CAT28F010HR-12T onsemi cat28f010-d.pdf Description: IC FLASH 1MBIT PARALLEL 32TSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товар відсутній
2SK3708 2SK3708.pdf
2SK3708
Виробник: onsemi
Description: MOSFET N-CH 100V 30A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 15A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
товар відсутній
2SJ656 2SJ656.pdf
2SJ656
Виробник: onsemi
Description: MOSFET P-CH 100V 18A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 75.5mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Supplier Device Package: TO-220ML
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 20 V
товар відсутній
2SC6082 ena0279-d.pdf
2SC6082
Виробник: onsemi
Description: TRANS NPN 50V 15A TO220ML
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
Frequency - Transition: 195MHz
Supplier Device Package: TO-220ML
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
товар відсутній
2SK4125 869-1070.jpg
2SK4125
Виробник: onsemi
Description: MOSFET N-CH 600V 17A TO3PB
Packaging: Tray
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 610mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 170W (Tc)
Supplier Device Package: TO-3PB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
товар відсутній
ATP102-TL-H atp102-d.pdf
ATP102-TL-H
Виробник: onsemi
Description: MOSFET P-CH 30V 40A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
товар відсутній
ATP104-TL-H atp104-d.pdf
ATP104-TL-H
Виробник: onsemi
Description: MOSFET P-CH 30V 75A ATPAK
товар відсутній
ATP113-TL-H
ATP113-TL-H
Виробник: onsemi
Description: MOSFET P-CH 60V 35A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
товар відсутній
ATP202-TL-H atp202-d.pdf
ATP202-TL-H
Виробник: onsemi
Description: MOSFET N-CH 30V 50A ATPAK
товар відсутній
ATP203-TL-H mosfets?documentNotFound=3&documentId=62789
ATP203-TL-H
Виробник: onsemi
Description: MOSFET N-CH 30V 75A ATPAK
товар відсутній
ATP204-TL-H mosfets?documentNotFound=3&documentId=62819
ATP204-TL-H
Виробник: onsemi
Description: MOSFET N-CH 30V 100A ATPAK
товар відсутній
ATP301-TL-H atp301-d.pdf
ATP301-TL-H
Виробник: onsemi
Description: MOSFET P-CH 100V 28A ATPAK
товар відсутній
ATP404-TL-H ATP404.pdf
ATP404-TL-H
Виробник: onsemi
Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V
товар відсутній
ATP405-TL-H 869-1073.jpg
ATP405-TL-H
Виробник: onsemi
Description: MOSFET N-CH 100V 40A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
товар відсутній
ATP602-TL-H mosfets?documentNotFound=3&documentId=62923
ATP602-TL-H
Виробник: onsemi
Description: MOSFET N-CH 600V 5A ATPAK
товар відсутній
2SK3557-7-TB-E 2sk3557-d.pdf
2SK3557-7-TB-E
Виробник: onsemi
Description: JFET N-CH 5V 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V
товар відсутній
2SK3666-3-TB-E ONSMS38239-1.pdf?t.download=true&u=5oefqw
2SK3666-3-TB-E
Виробник: onsemi
Description: JFET N-CH 10MA SMCP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
товар відсутній
CPH3145-TL-E cph3145_cph3245-d.pdf
CPH3145-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 2A 3CPH
товар відсутній
CPH5905G-TL-E cph5905-d.pdf
CPH5905G-TL-E
Виробник: onsemi
Description: TRANS NPN/MOSFET N-CH CPH5
Packaging: Tape & Reel (TR)
Voltage - Rated: 50V NPN, 15V N-Channel
Package / Case: SOT-23-5 Thin, TSOT-23-5
Current Rating (Amps): 150mA NPN, 50mA N-Channel
Mounting Type: Surface Mount
Transistor Type: NPN, N-Channel
Applications: General Purpose
Supplier Device Package: 5-CPH
товар відсутній
CPH6123-TL-E en7386-d.pdf
CPH6123-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 3A 6CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: 6-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товар відсутній
ECH8654-TL-H ena0981-d.pdf
ECH8654-TL-H
Виробник: onsemi
Description: MOSFET 2P-CH 20V 5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
товар відсутній
ECH8655R-TL-H ech8655r-d.pdf
ECH8655R-TL-H
Виробник: onsemi
Description: MOSFET 2N-CH 24V 9A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+20 грн
Мінімальне замовлення: 3000
MCH3475-TL-E mch3475-d.pdf
MCH3475-TL-E
Виробник: onsemi
Description: MOSFET N-CH 30V 1.8A SC70
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: SC-70FL/MCPH3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
товар відсутній
SBE805-TL-E en7291-d.pdf
SBE805-TL-E
Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 500MA 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
товар відсутній
SBS811-TL-E SBS811.pdf
SBS811-TL-E
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-VEC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
товар відсутній
SBX201C-TB-E ena0628-d.pdf
SBX201C-TB-E
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 2V 50MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 3-CP
Current - Max: 50 mA
товар відсутній
SCH2825-TL-E SCH2825.pdf
SCH2825-TL-E
Виробник: onsemi
Description: MOSFET N-CH 30V 1.6A 6SCH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 800mA, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 600mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
товар відсутній
ATP102-TL-H atp102-d.pdf
ATP102-TL-H
Виробник: onsemi
Description: MOSFET P-CH 30V 40A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 10 V
товар відсутній
ATP104-TL-H atp104-d.pdf
ATP104-TL-H
Виробник: onsemi
Description: MOSFET P-CH 30V 75A ATPAK
товар відсутній
ATP113-TL-H
ATP113-TL-H
Виробник: onsemi
Description: MOSFET P-CH 60V 35A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: ATPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 20 V
товар відсутній
ATP202-TL-H atp202-d.pdf
ATP202-TL-H
Виробник: onsemi
Description: MOSFET N-CH 30V 50A ATPAK
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+69.67 грн
10+ 59.97 грн
Мінімальне замовлення: 5
ATP203-TL-H mosfets?documentNotFound=3&documentId=62789
ATP203-TL-H
Виробник: onsemi
Description: MOSFET N-CH 30V 75A ATPAK
товар відсутній
ATP204-TL-H mosfets?documentNotFound=3&documentId=62819
ATP204-TL-H
Виробник: onsemi
Description: MOSFET N-CH 30V 100A ATPAK
товар відсутній
ATP301-TL-H atp301-d.pdf
ATP301-TL-H
Виробник: onsemi
Description: MOSFET P-CH 100V 28A ATPAK
товар відсутній
ATP404-TL-H ATP404.pdf
ATP404-TL-H
Виробник: onsemi
Description: MOSFET N-CH 60V 95A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 48A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 20 V
товар відсутній
ATP405-TL-H 869-1073.jpg
ATP405-TL-H
Виробник: onsemi
Description: MOSFET N-CH 100V 40A ATPAK
Packaging: Cut Tape (CT)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Power Dissipation (Max): 70W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
на замовлення 2784 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+115.88 грн
10+ 93.03 грн
100+ 74.06 грн
500+ 58.81 грн
1000+ 49.9 грн
Мінімальне замовлення: 3
ATP602-TL-H mosfets?documentNotFound=3&documentId=62923
ATP602-TL-H
Виробник: onsemi
Description: MOSFET N-CH 600V 5A ATPAK
товар відсутній
2SK3557-7-TB-E 2sk3557-d.pdf
2SK3557-7-TB-E
Виробник: onsemi
Description: JFET N-CH 5V 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 50mA
Mounting Type: Surface Mount
Configuration: N-Channel
Technology: JFET
Noise Figure: 1dB
Supplier Device Package: 3-CP
Part Status: Active
Voltage - Rated: 15 V
Voltage - Test: 5 V
Current - Test: 1 mA
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 1.5 V @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 32 mA @ 5 V
товар відсутній
2SK3666-3-TB-E ONSMS38239-1.pdf?t.download=true&u=5oefqw
2SK3666-3-TB-E
Виробник: onsemi
Description: JFET N-CH 10MA SMCP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SMCP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Power - Max: 200 mW
Resistance - RDS(On): 200 Ohms
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
товар відсутній
CPH3145-TL-E cph3145_cph3245-d.pdf
CPH3145-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 2A 3CPH
товар відсутній
CPH6123-TL-E en7386-d.pdf
CPH6123-TL-E
Виробник: onsemi
Description: TRANS PNP 50V 3A 6CPH
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 390MHz
Supplier Device Package: 6-CPH
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.3 W
товар відсутній
ECH8654-TL-H ena0981-d.pdf
ECH8654-TL-H
Виробник: onsemi
Description: MOSFET 2P-CH 20V 5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 960pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
на замовлення 196 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+54.03 грн
10+ 45.59 грн
100+ 34.93 грн
Мінімальне замовлення: 6
ECH8655R-TL-H ech8655r-d.pdf
ECH8655R-TL-H
Виробник: onsemi
Description: MOSFET 2N-CH 24V 9A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9A
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
6+51.9 грн
10+ 43.81 грн
100+ 33.61 грн
500+ 24.93 грн
1000+ 19.94 грн
Мінімальне замовлення: 6
SBE805-TL-E en7291-d.pdf
SBE805-TL-E
Виробник: onsemi
Description: DIODE ARR SCHOTT 30V 500MA 5CPH
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 5-CPH
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 30 µA @ 15 V
товар відсутній
SBS811-TL-E SBS811.pdf
SBS811-TL-E
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-VEC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
товар відсутній
SBX201C-TB-E ena0628-d.pdf
SBX201C-TB-E
Виробник: onsemi
Description: DIODE ARRAY SCHOTTKY 2V 50MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.28pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 2V
Supplier Device Package: 3-CP
Current - Max: 50 mA
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+26.3 грн
14+ 20.47 грн
100+ 13.94 грн
Мінімальне замовлення: 11
FSB50550U
FSB50550U
Виробник: onsemi
Description: IC SMART POWER MOD 2A SPM22-AD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 2 A
Voltage: 500 V
товар відсутній
FCPF13N60NT fcpf13n60nt-d.pdf
FCPF13N60NT
Виробник: onsemi
Description: MOSFET N-CH 600V 13A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 258mOhm @ 6.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 100 V
товар відсутній
QRE1113 qre1113-d.pdf
QRE1113
Виробник: onsemi
Description: SENSOR REFL 1MM PHOTOTRANS THRU
Packaging: Tube
Package / Case: 4-DIP (0.157", 4.00mm)
Output Type: Phototransistor
Sensing Distance: 0.039" (1mm)
Sensing Method: Reflective
Mounting Type: Through Hole
Response Time: 20µs, 20µs
Part Status: Active
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 461 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+108.77 грн
10+ 78.66 грн
25+ 62.93 грн
160+ 54.14 грн
Мінімальне замовлення: 3
FSBB20CH60CL FSBB20CH60CL.pdf
FSBB20CH60CL
Виробник: onsemi
Description: SMART POWER MODULE 20A SPM27-CB
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
товар відсутній
FDP030N06 fdp030n06-d.pdf
FDP030N06
Виробник: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
на замовлення 899 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+302.85 грн
50+ 231.14 грн
100+ 198.12 грн
500+ 165.26 грн
FDI030N06 fdi030n06-d.pdf
FDI030N06
Виробник: onsemi
Description: MOSFET N-CH 60V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
товар відсутній
FAN5646UC01X FAN5646.pdf
FAN5646UC01X
Виробник: onsemi
Description: IC LED DRVR LIN PWM 20MA 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: 4-WLCSP (0.82x0.82)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
FDMC15N06 fdmc15n06-d.pdf
FDMC15N06
Виробник: onsemi
Description: MOSFET N-CH 55V 2.4A/15A 8MLP
товар відсутній
SB1245 sb1245-d.pdf
SB1245
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 12A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
FDB029N06 fdb029n06-d.pdf
FDB029N06
Виробник: onsemi
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+294.03 грн
1600+ 246.61 грн
2400+ 237.47 грн
Мінімальне замовлення: 800
FDB029N06 fdb029n06-d.pdf
FDB029N06
Виробник: onsemi
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+451.42 грн
10+ 392.74 грн
100+ 325.16 грн
FDMC15N06 fdmc15n06-d.pdf
FDMC15N06
Виробник: onsemi
Description: MOSFET N-CH 55V 2.4A/15A 8MLP
товар відсутній
SB1245 sb1245-d.pdf
SB1245
Виробник: onsemi
Description: DIODE SCHOTTKY 45V 12A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
товар відсутній
FAN5646UC01X FAN5646.pdf
FAN5646UC01X
Виробник: onsemi
Description: IC LED DRVR LIN PWM 20MA 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Supplier Device Package: 4-WLCSP (0.82x0.82)
Dimming: PWM
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товар відсутній
CAT28F010HR-12T cat28f010-d.pdf
CAT28F010HR-12T
Виробник: onsemi
Description: IC FLASH 1MBIT PARALLEL 32TSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FLASH
Memory Format: FLASH
Supplier Device Package: 32-TSOP
Part Status: Obsolete
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 224 407 408 409 410 411 412 413 414 415 416 417 448 672 896 1120 1344 1568 1792 2016 2240 2246  [ Наступна Сторінка >> ]