| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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80SQ045NRLG | ONSEMI |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.55V Max. forward impulse current: 140A Kind of package: reel; tape |
на замовлення 988 шт: термін постачання 14-30 дні (днів) |
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BC818-40LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD243T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK Collector-emitter voltage: 100V Power dissipation: 12.5W Polarisation: bipolar Type of transistor: NPN Current gain: 40...180 Kind of package: reel; tape Case: DPAK Frequency: 40MHz Collector current: 4A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MJD243G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK Collector-emitter voltage: 100V Power dissipation: 12.5W Polarisation: bipolar Type of transistor: NPN Current gain: 40...180 Kind of package: tube Case: DPAK Frequency: 40MHz Collector current: 4A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NJVMJD243T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK Collector-emitter voltage: 100V Power dissipation: 12.5W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 40...180 Kind of package: reel; tape Case: DPAK Frequency: 40MHz Collector current: 4A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BUV21G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 200V; 40A; 250W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 200V Collector current: 40A Power dissipation: 250W Case: TO3; TO204 Current gain: 10...60 Mounting: THT Frequency: 8MHz Pulsed collector current: 50A Kind of package: in-tray |
на замовлення 76 шт: термін постачання 14-30 дні (днів) |
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| NVBG015N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 103A Pulsed drain current: 442A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: SMD Gate charge: 283nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVHL015N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 115A Pulsed drain current: 484A Power dissipation: 321W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 16mΩ Mounting: THT Gate charge: 283nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVH4L015N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Pulsed drain current: 483A Power dissipation: 250W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 16Ω Mounting: THT Gate charge: 283C Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVBB30H60CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 15A Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.78V Max. load current: 30A Max. forward impulse current: 260A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGD1240G2 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; DPAK Type of transistor: IGBT Case: DPAK Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FGD3050G2 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 500V Collector current: 27A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FGD3440G2-F085 | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 25A Power dissipation: 166W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ISL9V2040D3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 10A Power dissipation: 130W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Version: ESD Features of semiconductor devices: logic level Application: ignition systems |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS15 | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SS15FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP380HMUAJAATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HSN10AAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380LMUAJAATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HSNAJAAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP6 On-state resistance: 70mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NCP380LSN05AAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HMU05AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380LSNAJAAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5...2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP6 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HMU10AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HMU15AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HMU20AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380HMU21AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.1A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380LMU05AATBG | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: uDFN6 On-state resistance: 0.11Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP380LSN10AAT1G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: TSOP5 On-state resistance: 135mΩ Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: low Control voltage: 0...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2904ADMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: Micro8 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 200nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| EGP20K | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns Mounting: THT Max. forward impulse current: 75A Max. off-state voltage: 0.8kV Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: DO15 Type of diode: rectifying Reverse recovery time: 75ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVBS310FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.85V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NRVBS3100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.9V Application: automotive industry Max. off-state voltage: 0.1kV Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 130A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMBZ6V2ALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.2V; 2.76A; 24W; double,common anode; ESD; SOT23 Type of diode: TVS array Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double Kind of package: reel; tape Number of channels: 2 Breakdown voltage: 6.2V Max. forward impulse current: 2.76A Peak pulse power dissipation: 24W Version: ESD Max. off-state voltage: 3V Leakage current: 0.5µA |
на замовлення 98 шт: термін постачання 14-30 дні (днів) |
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74VHC373MTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Operating temperature: -40...85°C Trigger: level-triggered Quiescent current: 40µA Kind of package: tube Case: TSSOP20 Family: VHC Kind of integrated circuit: D latch Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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74VHC373MTCX | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Kind of package: reel; tape Case: TSSOP20 Family: VHC Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| 74VHC373MX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; SO20-W; VHC; -40÷85°C; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Operating temperature: -40...85°C Trigger: level-triggered Quiescent current: 40µA Kind of package: reel; tape Case: SO20-W Family: VHC Kind of integrated circuit: D latch Number of channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74VHC373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Kind of package: reel; tape Case: TSSOP20 Family: VHC Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC74VHC373DWR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Manufacturer series: VHC Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Kind of package: reel; tape Case: SOIC20 Family: VHC Kind of integrated circuit: 3-state; D latch; octal Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FAN53880UC002X | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; WLCSP25; SMD; reel,tape Mounting: SMD Type of integrated circuit: PMIC Kind of package: reel; tape Case: WLCSP25 Kind of integrated circuit: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SZMMSZ5V1T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FDP036N10A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 214A; Idm: 856A; 333W; TO220-3 Mounting: THT Gate charge: 89nC Polarisation: unipolar Drain current: 214A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 3.6mΩ Pulsed drain current: 856A Power dissipation: 333W |
на замовлення 124 шт: термін постачання 14-30 дні (днів) |
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BZX84C30LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C |
на замовлення 453 шт: термін постачання 14-30 дні (днів) |
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SZBZX84C30ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 30V Mounting: SMD Tolerance: ±7% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZBZX84C30LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NRVBB60H100CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 30A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.98V Max. load current: 60A Max. forward impulse current: 350A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MOC256M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 20-150%@10mA Collector-emitter voltage: 30V Case: SO8 Max. off-state voltage: 6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBT3904 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
| MC14532BDR2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; priority encoder; SMD; SOIC16; Ch: 1; IN: 8; 3÷18V Operating temperature: -55...125°C Mounting: SMD Supply voltage: 3...18V Type of integrated circuit: digital Number of inputs: 8 Case: SOIC16 Number of outputs: 3 Kind of integrated circuit: priority encoder Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDBL9401-F085T6 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 90.3W; H-PSOF8L Mounting: SMD Power dissipation: 90.3W Gate charge: 148nC Polarisation: unipolar Drain current: 240A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: H-PSOF8L On-state resistance: 670µΩ |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FDBL9406-F085T6 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 68.2W; H-PSOF8L Mounting: SMD Power dissipation: 68.2W Gate charge: 75nC Polarisation: unipolar Drain current: 240A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: H-PSOF8L On-state resistance: 1.21mΩ |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FDBL0065N40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 300A Power dissipation: 429W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 0.65mΩ Mounting: SMD Gate charge: 0.22µC Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| FDBL0090N40 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 357W; H-PSOF8L Mounting: SMD Power dissipation: 357W Gate charge: 144nC Polarisation: unipolar Drain current: 240A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: H-PSOF8L On-state resistance: 0.9mΩ |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MMBZ15VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Version: ESD Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Leakage current: 50nA Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape |
на замовлення 8601 шт: термін постачання 14-30 дні (днів) |
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SZMMBZ15VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Number of channels: 2 Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBZ15VDLT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12.8V Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape Version: ESD Leakage current: 0.1µA |
на замовлення 1709 шт: термін постачання 14-30 дні (днів) |
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MMBZ15VDLT3G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common cathode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12.8V Number of channels: 2 Tolerance: ±5% Kind of package: reel; tape Version: ESD Leakage current: 0.1µA |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SZMMBZ15VDLT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2 Type of diode: TVS array Breakdown voltage: 15V Max. forward impulse current: 1.9A Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Max. off-state voltage: 12V Number of channels: 2 Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BF720T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 50 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
на замовлення 412 шт: термін постачання 14-30 дні (днів) |
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SBF720T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 50 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| 80SQ045NRLG |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
на замовлення 988 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 83.99 грн |
| 10+ | 42.27 грн |
| 25+ | 39.50 грн |
| 50+ | 37.49 грн |
| 100+ | 35.14 грн |
| 200+ | 32.62 грн |
| BC818-40LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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В кошику
од. на суму грн.
| MJD243T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: reel; tape
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: reel; tape
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| MJD243G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: tube
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 40...180
Kind of package: tube
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| NJVMJD243T4G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 40...180
Kind of package: reel; tape
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 4A; 12.5W; DPAK
Collector-emitter voltage: 100V
Power dissipation: 12.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 40...180
Kind of package: reel; tape
Case: DPAK
Frequency: 40MHz
Collector current: 4A
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| BUV21G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 40A; 250W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 40A
Power dissipation: 250W
Case: TO3; TO204
Current gain: 10...60
Mounting: THT
Frequency: 8MHz
Pulsed collector current: 50A
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 200V; 40A; 250W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 40A
Power dissipation: 250W
Case: TO3; TO204
Current gain: 10...60
Mounting: THT
Frequency: 8MHz
Pulsed collector current: 50A
Kind of package: in-tray
на замовлення 76 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1305.07 грн |
| 3+ | 1179.14 грн |
| NVBG015N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 442A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 103A; Idm: 442A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 103A
Pulsed drain current: 442A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 283nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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В кошику
од. на суму грн.
| NVHL015N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 115A
Pulsed drain current: 484A
Power dissipation: 321W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 115A; Idm: 484A; 321W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 115A
Pulsed drain current: 484A
Power dissipation: 321W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 283nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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В кошику
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| NVH4L015N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 483A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16Ω
Mounting: THT
Gate charge: 283C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 483A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Pulsed drain current: 483A
Power dissipation: 250W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 16Ω
Mounting: THT
Gate charge: 283C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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В кошику
од. на суму грн.
| NRVBB30H60CTT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.78V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| FGD1240G2 |
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; DPAK
Type of transistor: IGBT
Case: DPAK
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; DPAK
Type of transistor: IGBT
Case: DPAK
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FGD3050G2 |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 500V; 27A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 500V
Collector current: 27A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
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В кошику
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| FGD3440G2-F085 |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 25A; 166W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 25A
Power dissipation: 166W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
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В кошику
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| ISL9V2040D3ST |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 10A; 130W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 10A
Power dissipation: 130W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Version: ESD
Features of semiconductor devices: logic level
Application: ignition systems
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В кошику
од. на суму грн.
| SS15 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
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В кошику
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| SS15FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| NCP380HMUAJAATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380HSN10AAT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380LMUAJAATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
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| NCP380HSNAJAAT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 70mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Operating temperature: -40...85°C
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 70mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NCP380LSN05AAT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
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| NCP380HMU05AATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380LSNAJAAT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.1A; Ch: 1; P-Channel; SMD; TSOP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5...2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP6
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
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| NCP380HMU10AATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380HMU15AATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380HMU20AATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380HMU21AATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP380LMU05AATBG |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; P-Channel; SMD; uDFN6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: uDFN6
On-state resistance: 0.11Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
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| NCP380LSN10AAT1G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 1; P-Channel; SMD; TSOP5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: TSOP5
On-state resistance: 135mΩ
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: low
Control voltage: 0...5.5V DC
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| LM2904ADMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
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| EGP20K |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns
Mounting: THT
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO15
Type of diode: rectifying
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 2A; Ifsm: 75A; DO15; reel,tape; 75ns
Mounting: THT
Max. forward impulse current: 75A
Max. off-state voltage: 0.8kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO15
Type of diode: rectifying
Reverse recovery time: 75ns
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| NRVBS310FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 80A
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| NRVBS3100T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 130A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 130A
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| MMBZ6V2ALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; 2.76A; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Kind of package: reel; tape
Number of channels: 2
Breakdown voltage: 6.2V
Max. forward impulse current: 2.76A
Peak pulse power dissipation: 24W
Version: ESD
Max. off-state voltage: 3V
Leakage current: 0.5µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2V; 2.76A; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Kind of package: reel; tape
Number of channels: 2
Breakdown voltage: 6.2V
Max. forward impulse current: 2.76A
Peak pulse power dissipation: 24W
Version: ESD
Max. off-state voltage: 3V
Leakage current: 0.5µA
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.03 грн |
| 61+ | 6.88 грн |
| 69+ | 6.12 грн |
| 95+ | 4.43 грн |
| 74VHC373MTC |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 40µA
Kind of package: tube
Case: TSSOP20
Family: VHC
Kind of integrated circuit: D latch
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; TSSOP20; VHC; -40÷85°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 40µA
Kind of package: tube
Case: TSSOP20
Family: VHC
Kind of integrated circuit: D latch
Number of channels: 8
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Мінімальне замовлення: 3 шт
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| 74VHC373MTCX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| 74VHC373MX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; SO20-W; VHC; -40÷85°C; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO20-W
Family: VHC
Kind of integrated circuit: D latch
Number of channels: 8
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷5.5VDC; SMD; SO20-W; VHC; -40÷85°C; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Operating temperature: -40...85°C
Trigger: level-triggered
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO20-W
Family: VHC
Kind of integrated circuit: D latch
Number of channels: 8
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| MC74VHC373DTR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: TSSOP20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
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Мінімальне замовлення: 2500 шт
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| MC74VHC373DWR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: SOIC20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
Category: Latches
Description: IC: digital; 3-state,octal,D latch; Ch: 8; CMOS; 2÷5.5VDC; SMD; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Manufacturer series: VHC
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Case: SOIC20
Family: VHC
Kind of integrated circuit: 3-state; D latch; octal
Number of channels: 8
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Мінімальне замовлення: 1000 шт
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| FAN53880UC002X |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP25; SMD; reel,tape
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP25
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; WLCSP25; SMD; reel,tape
Mounting: SMD
Type of integrated circuit: PMIC
Kind of package: reel; tape
Case: WLCSP25
Kind of integrated circuit: DC/DC converter
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| SZMMSZ5V1T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| FDP036N10A |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 214A; Idm: 856A; 333W; TO220-3
Mounting: THT
Gate charge: 89nC
Polarisation: unipolar
Drain current: 214A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.6mΩ
Pulsed drain current: 856A
Power dissipation: 333W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 214A; Idm: 856A; 333W; TO220-3
Mounting: THT
Gate charge: 89nC
Polarisation: unipolar
Drain current: 214A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.6mΩ
Pulsed drain current: 856A
Power dissipation: 333W
на замовлення 124 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 396.49 грн |
| 10+ | 286.82 грн |
| 50+ | 271.72 грн |
| BZX84C30LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
на замовлення 453 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 109+ | 3.86 грн |
| 158+ | 2.67 грн |
| 172+ | 2.44 грн |
| 184+ | 2.28 грн |
| SZBZX84C30ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C30LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
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Мінімальне замовлення: 3000 шт
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| NRVBB60H100CTT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
Max. load current: 60A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 30Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.98V
Max. load current: 60A
Max. forward impulse current: 350A
Kind of package: reel; tape
Application: automotive industry
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| MOC256M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20-150%@10mA
Collector-emitter voltage: 30V
Case: SO8
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20-150%@10mA
Collector-emitter voltage: 30V
Case: SO8
Max. off-state voltage: 6V
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| MMBT3904 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
товару немає в наявності
Мінімальне замовлення: 25 шт
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| MC14532BDR2G |
|
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; priority encoder; SMD; SOIC16; Ch: 1; IN: 8; 3÷18V
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: digital
Number of inputs: 8
Case: SOIC16
Number of outputs: 3
Kind of integrated circuit: priority encoder
Number of channels: 1
Category: Interfaces others - integrated circuits
Description: IC: digital; priority encoder; SMD; SOIC16; Ch: 1; IN: 8; 3÷18V
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V
Type of integrated circuit: digital
Number of inputs: 8
Case: SOIC16
Number of outputs: 3
Kind of integrated circuit: priority encoder
Number of channels: 1
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| FDBL9401-F085T6 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 90.3W; H-PSOF8L
Mounting: SMD
Power dissipation: 90.3W
Gate charge: 148nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: H-PSOF8L
On-state resistance: 670µΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 90.3W; H-PSOF8L
Mounting: SMD
Power dissipation: 90.3W
Gate charge: 148nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: H-PSOF8L
On-state resistance: 670µΩ
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| FDBL9406-F085T6 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 68.2W; H-PSOF8L
Mounting: SMD
Power dissipation: 68.2W
Gate charge: 75nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: H-PSOF8L
On-state resistance: 1.21mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 68.2W; H-PSOF8L
Mounting: SMD
Power dissipation: 68.2W
Gate charge: 75nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: H-PSOF8L
On-state resistance: 1.21mΩ
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| FDBL0065N40 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 0.65mΩ
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
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Мінімальне замовлення: 2000 шт
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| FDBL0090N40 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 357W; H-PSOF8L
Mounting: SMD
Power dissipation: 357W
Gate charge: 144nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: H-PSOF8L
On-state resistance: 0.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 357W; H-PSOF8L
Mounting: SMD
Power dissipation: 357W
Gate charge: 144nC
Polarisation: unipolar
Drain current: 240A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: H-PSOF8L
On-state resistance: 0.9mΩ
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Мінімальне замовлення: 2000 шт
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| MMBZ15VALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 50nA
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Version: ESD
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 50nA
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 8601 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.74 грн |
| 54+ | 7.88 грн |
| 65+ | 6.47 грн |
| 75+ | 5.62 грн |
| 100+ | 4.85 грн |
| 250+ | 4.00 грн |
| 500+ | 3.48 грн |
| 1000+ | 3.13 грн |
| 3000+ | 2.59 грн |
| SZMMBZ15VALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| MMBZ15VDLT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
на замовлення 1709 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.74 грн |
| 52+ | 8.22 грн |
| 59+ | 7.21 грн |
| 83+ | 5.07 грн |
| 100+ | 4.41 грн |
| 500+ | 3.31 грн |
| 1000+ | 2.91 грн |
| 1500+ | 2.70 грн |
| MMBZ15VDLT3G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common cathode; ESD; SOT23
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12.8V
Number of channels: 2
Tolerance: ±5%
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
товару немає в наявності
Мінімальне замовлення: 10000 шт
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од. на суму грн.
| SZMMBZ15VDLT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; Ch: 2
Type of diode: TVS array
Breakdown voltage: 15V
Max. forward impulse current: 1.9A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Number of channels: 2
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| BF720T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
на замовлення 412 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.67 грн |
| 12+ | 35.39 грн |
| 15+ | 29.60 грн |
| 100+ | 16.27 грн |
| SBF720T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.