| Фото | Назва | Виробник | Інформація | Доступність | Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | MTD3055VL | onsemi |  Description: MOSFET N-CH 60V 12A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V Power Dissipation (Max): 3.9W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NB7NPQ1004MMTTWG | onsemi |  Description: IC REDRIVER 2-PORT LIN 42WQFN | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NB7NPQ1004MMTTWG | onsemi |  Description: IC REDRIVER 2-PORT LIN 42WQFN | на замовлення 4990 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|  | NCP1618FDR2G | onsemi |  Description: MULTIMODE (CRM-CCM) POWER FACTOR Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9.5V ~ 35V Frequency - Switching: 25kHz ~ 130kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 9-SOIC Part Status: Active Current - Startup: 1.6 mA | на замовлення 12500 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|  | NCP1618FDR2G | onsemi |  Description: MULTIMODE (CRM-CCM) POWER FACTOR Packaging: Cut Tape (CT) Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 9.5V ~ 35V Frequency - Switching: 25kHz ~ 130kHz Mode: Continuous Conduction (CCM) Supplier Device Package: 9-SOIC Part Status: Active Current - Startup: 1.6 mA | на замовлення 14835 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NSS1C200MZ4T3G | onsemi |  Description: TRANS PNP 100V 2A SOT223 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 800 mW | на замовлення 101694 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | CPH5520-TL-E | onsemi |  Description: TRANS NPN/PNP 80V/50V 2A 5-CPH Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 1.2W Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V, 50V Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: 5-CPH Part Status: Active | на замовлення 3000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | CPH5520-TL-E | onsemi |  Description: TRANS NPN/PNP 80V/50V 2A 5-CPH Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Operating Temperature: 150°C (TJ) Power - Max: 1.2W Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V, 50V Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 420MHz Supplier Device Package: 5-CPH Part Status: Active | на замовлення 3710 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | FCPF4300N80Z | onsemi |  Description: MOSFET N-CH 800V 1.6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V Power Dissipation (Max): 19.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 160µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V | на замовлення 983 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NSR0340V2T5G | onsemi |  Description: DIODE SCHOTTKY 40V 250MA SOD523 Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA Current - Reverse Leakage @ Vr: 6 µA @ 40 V | на замовлення 8000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NSR0340V2T5G | onsemi |  Description: DIODE SCHOTTKY 40V 250MA SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA Current - Reverse Leakage @ Vr: 6 µA @ 40 V | на замовлення 17802 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|  | ISL9R1560G2-F085 | onsemi | Description: DIODE GEN PURP 600V 15A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Avalanche Current - Average Rectified (Io): 15A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NLV14538BDWR2G | onsemi |  Description: IC MMV 2-CIR 95-NS 16-SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -55°C ~ 125°C Propagation Delay: 95 ns Independent Circuits: 2 Current - Output High, Low: 8.8mA, 8.8mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOIC Grade: Automotive Voltage - Supply: 3 V ~ 18 V Qualification: AEC-Q100 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NTTFS015P03P8ZTAG | onsemi |  Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NTTFS015P03P8ZTAG | onsemi |  Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V | на замовлення 855 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NVTFWS015P03P8ZTAG | onsemi |  Description: PT8P PORTFOLIO EXPANSION Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NVTFS015P03P8ZTAG | onsemi |  Description: PT8P PORTFOLIO EXPANSION Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | TIP111TU | onsemi |  Description: TRANS NPN DARL 80V 2A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | MMBF4392 | onsemi |  Description: JFET N-CH 30V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 Part Status: Obsolete Power - Max: 350 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | MMBF4392 | onsemi |  Description: JFET N-CH 30V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Voltage - Breakdown (V(BR)GSS): 30 V Supplier Device Package: SOT-23-3 Part Status: Obsolete Power - Max: 350 mW Resistance - RDS(On): 60 Ohms Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | SZ1SMB5941BT3 | onsemi | Description: DIODE ZENER 47V 3W SMB | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | 1SMB5941BT3 | onsemi |  Description: DIODE ZENER 47V 3W SMB | на замовлення 26188 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NCV8160AMX250TBG | onsemi |  Description: IC REG LINEAR 2.5V 250MA 4XDFN Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 23 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.175V @ 250mA Protection Features: Over Current, Over Temperature | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NCV8160AMX250TBG | onsemi |  Description: IC REG LINEAR 2.5V 250MA 4XDFN Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 250mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 23 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 91dB ~ 48dB (100Hz ~ 100kHz) Voltage Dropout (Max): 0.175V @ 250mA Protection Features: Over Current, Over Temperature | на замовлення 2745 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NCP114AMX250TBG | onsemi |  Description: IC REG LINEAR 2.5V 300MA 4-UDFN Packaging: Tape & Reel (TR) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature | на замовлення 6000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NCP114AMX250TBG | onsemi |  Description: IC REG LINEAR 2.5V 300MA 4-UDFN Packaging: Cut Tape (CT) Package / Case: 4-UDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-UDFN (1.0x1.0) Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Protection Features: Over Current, Over Temperature | на замовлення 11870 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NCV20092DMR2G | onsemi |  Description: IC OPAMP GP 2 CIRCUIT 8MSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 23µA (x2 Channels) Slew Rate: 0.17V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 8.5 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V | на замовлення 4000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NCV20092DMR2G | onsemi |  Description: IC OPAMP GP 2 CIRCUIT 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 23µA (x2 Channels) Slew Rate: 0.17V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: 8-MSOP Part Status: Active Number of Circuits: 2 Current - Output / Channel: 8.5 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V | на замовлення 4000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NCV68261MTWAITBG | onsemi |  Description: IDEAL DIODE AND HS SWITCH NMOS D Features: Load Discharge Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 3V ~ 32V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 6-WDFNW (2x2) Fault Protection: Over Voltage, Reverse Current, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NCV68261MTWAITBG | onsemi |  Description: IDEAL DIODE AND HS SWITCH NMOS D Features: Load Discharge Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Input Type: Non-Inverting Voltage - Load: 3V ~ 32V Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: 6-WDFNW (2x2) Fault Protection: Over Voltage, Reverse Current, UVLO Grade: Automotive Part Status: Active Qualification: AEC-Q100 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | FDMS86181 | onsemi |  Description: MOSFET N-CH 100V 44A/124A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V | на замовлення 6000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | FDMS86181 | onsemi |  Description: MOSFET N-CH 100V 44A/124A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V | на замовлення 8204 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|  | NTMFD1D1N02X | onsemi |  Description: MOSFET 2N-CH 25V 14A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active | на замовлення 375000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
| NCP5010FCT1G | onsemi |  Description: IC LED DRV RGLT ANALOG 8FLIPCHIP | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||||
|   | LM4041BSD-122GT3 | onsemi |  Description: VOLTAGE REFERENCES, PRECISION MI Packaging: Bulk Part Status: Active | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | 2N7002V | onsemi |  Description: MOSFET 2N-CH 60V 0.28A SOT563F Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563F Part Status: Active | на замовлення 1210 шт:термін постачання 21-31 дні (днів) | В кошику од. на суму грн. | ||||||||||||||||
|   | 2N7002V | onsemi |  Description: MOSFET 2N-CH 60V 0.28A SOT563F Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563F Part Status: Active | на замовлення 2277 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | CAT863MTBI-GT3 | onsemi |  Description: IC SUPERVISOR 1 CHANNEL SOT23-3 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Simple Reset/Power-On Reset Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 4.38V Supplier Device Package: SOT-23-3 DigiKey Programmable: Not Verified | на замовлення 78000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | CAT863TTBI-GT3 | onsemi |  Description: IC SUPERVISOR 1 CHANNEL SOT23-3 | на замовлення 12468 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | KSC5305DTU | onsemi |  Description: TRANS NPN 400V 5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 75 W | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | MTD3055V | onsemi |  Description: MOSFET N-CH 60V 12A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V Power Dissipation (Max): 3.9W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
| ,TO-226_straightlead.jpg)  | 2N3820 | onsemi |  Description: JFET P-CH 20V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V Voltage - Breakdown (V(BR)GSS): 20 V Supplier Device Package: TO-92-3 Power - Max: 350 mW Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NP3100GBRLG | onsemi |  Description: THYRISTOR 275V 80A DO204AC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NSVS50031SB3T1G | onsemi |  Description: TRANS NPN 50V 3A 3-CPH Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: 3-CPH Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.1 W Qualification: AEC-Q101 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | NSVS50031SB3T1G | onsemi |  Description: TRANS NPN 50V 3A 3-CPH Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 380MHz Supplier Device Package: 3-CPH Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.1 W Qualification: AEC-Q101 | на замовлення 661 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | CPH6121-TL-E | onsemi | Description: TRANS PNP 12V 3A 6CPH Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 380MHz Supplier Device Package: 6-CPH Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 1.3 W | на замовлення 15000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | FDLL400 | onsemi |  Description: DIODE GEN PURP 150V 200MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V | на замовлення 5000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | FDLL400 | onsemi |  Description: DIODE GEN PURP 150V 200MA SOD80 Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V | на замовлення 7484 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | MMUN2113LT3 | onsemi |  Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | MMUN2113LT1 | onsemi |  Description: TRANS BRT PNP 100MA 50V SOT23 Packaging: Cut Tape (CT) | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|  | NC7S02M5X-L22090 | onsemi |  Description: IC GATE NOR 1CH 2-INP SOT23-5 | на замовлення 114000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | MUN2112T3 | onsemi |  Description: SMALL SIGNAL BIPOLAR TRANSISTOR | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | MUN2112T1 | onsemi |  Description: TRANS BRT PNP 100MA 50V SC-59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms | на замовлення 51000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | NSVMUN2112T1G | onsemi |  Description: TRANS PREBIAS PNP 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-59 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q101 | на замовлення 174000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | CPH5541-TL-E | onsemi |  Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH | на замовлення 3000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | CPH5541-TL-E | onsemi |  Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH | на замовлення 3000 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
|   | CPH6001A-TL-E | onsemi |  Description: RF TRANS NPN 12V 6.7GHZ 6-CPH Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: 6-CPH | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||||
|   | CPH6001A-TL-E | onsemi |  Description: RF TRANS NPN 12V 6.7GHZ 6-CPH Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 11dB Power - Max: 800mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V Frequency - Transition: 6.7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Supplier Device Package: 6-CPH | на замовлення 1189 шт:термін постачання 21-31 дні (днів) | 
 | ||||||||||||||||
| LV5893M-TE-L-E | onsemi | Description: STEP DOWN SWITCHING REGULATOR | на замовлення 226000 шт:термін постачання 21-31 дні (днів) | 
 | |||||||||||||||||
|   | NCP12400CBHAA0DR2G | onsemi |  Description: IC OFFLINE SWITCH FLYBACK 7SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V Supplier Device Package: 7-SOIC Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 12 V | на замовлення 35000 шт:термін постачання 21-31 дні (днів) | 
 | 
| MTD3055VL |  | 
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
    Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| NB7NPQ1004MMTTWG |  | 
Виробник: onsemi
Description: IC REDRIVER 2-PORT LIN 42WQFN
    Description: IC REDRIVER 2-PORT LIN 42WQFN
товару немає в наявності
    В кошику
     од. на суму     грн.
| NB7NPQ1004MMTTWG |  | 
Виробник: onsemi
Description: IC REDRIVER 2-PORT LIN 42WQFN
    Description: IC REDRIVER 2-PORT LIN 42WQFN
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 291.61 грн | 
| 10+ | 252.25 грн | 
| 25+ | 238.46 грн | 
| 100+ | 193.95 грн | 
| 250+ | 184.00 грн | 
| 500+ | 165.11 грн | 
| 1000+ | 136.96 грн | 
| 2500+ | 130.12 грн | 
| NCP1618FDR2G |  | 
Виробник: onsemi
Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
    Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2500+ | 37.10 грн | 
| NCP1618FDR2G |  | 
Виробник: onsemi
Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
    Description: MULTIMODE (CRM-CCM) POWER FACTOR
Packaging: Cut Tape (CT)
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 9.5V ~ 35V
Frequency - Switching: 25kHz ~ 130kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: 9-SOIC
Part Status: Active
Current - Startup: 1.6 mA
на замовлення 14835 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3+ | 144.57 грн | 
| 10+ | 85.83 грн | 
| 25+ | 72.58 грн | 
| 100+ | 54.42 грн | 
| 250+ | 47.87 грн | 
| 500+ | 43.91 грн | 
| 1000+ | 39.97 грн | 
| NSS1C200MZ4T3G |  | 
Виробник: onsemi
Description: TRANS PNP 100V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
    Description: TRANS PNP 100V 2A SOT223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 800 mW
на замовлення 101694 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1596+ | 15.70 грн | 
| CPH5520-TL-E |  | 
Виробник: onsemi
Description: TRANS NPN/PNP 80V/50V 2A 5-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
    Description: TRANS NPN/PNP 80V/50V 2A 5-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 20.79 грн | 
| CPH5520-TL-E |  | 
Виробник: onsemi
Description: TRANS NPN/PNP 80V/50V 2A 5-CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
    Description: TRANS NPN/PNP 80V/50V 2A 5-CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Operating Temperature: 150°C (TJ)
Power - Max: 1.2W
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V, 50V
Vce Saturation (Max) @ Ib, Ic: 260mV @ 50mA, 1A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 420MHz
Supplier Device Package: 5-CPH
Part Status: Active
на замовлення 3710 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4+ | 84.26 грн | 
| 10+ | 50.43 грн | 
| 100+ | 33.02 грн | 
| 500+ | 23.94 грн | 
| 1000+ | 21.67 грн | 
| FCPF4300N80Z |  | 
Виробник: onsemi
Description: MOSFET N-CH 800V 1.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
    Description: MOSFET N-CH 800V 1.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 4.3Ohm @ 800mA, 10V
Power Dissipation (Max): 19.2W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 160µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 100 V
на замовлення 983 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 242.87 грн | 
| 10+ | 151.94 грн | 
| 100+ | 105.34 грн | 
| 500+ | 80.18 грн | 
| NSR0340V2T5G |  | 
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
    Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 8000+ | 3.34 грн | 
| NSR0340V2T5G |  | 
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
    Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
на замовлення 17802 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 20+ | 17.35 грн | 
| 28+ | 11.61 грн | 
| 100+ | 9.30 грн | 
| 500+ | 6.47 грн | 
| 1000+ | 4.36 грн | 
| 2000+ | 3.80 грн | 
| ISL9R1560G2-F085 | 
Виробник: onsemi
Description: DIODE GEN PURP 600V 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
    Description: DIODE GEN PURP 600V 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| NLV14538BDWR2G |  | 
Виробник: onsemi
Description: IC MMV 2-CIR 95-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 95 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Grade: Automotive
Voltage - Supply: 3 V ~ 18 V
Qualification: AEC-Q100
    Description: IC MMV 2-CIR 95-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -55°C ~ 125°C
Propagation Delay: 95 ns
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Grade: Automotive
Voltage - Supply: 3 V ~ 18 V
Qualification: AEC-Q100
товару немає в наявності
    В кошику
     од. на суму     грн.
| NTTFS015P03P8ZTAG |  | 
Виробник: onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
    Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| NTTFS015P03P8ZTAG |  | 
Виробник: onsemi
Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
    Description: MOSFET P-CH 30V 13.4A/47.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 47.6A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 12A, 10V
Power Dissipation (Max): 2.66W (Ta), 33.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
на замовлення 855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4+ | 89.22 грн | 
| 10+ | 53.93 грн | 
| 100+ | 35.40 грн | 
| 500+ | 25.73 грн | 
| NVTFWS015P03P8ZTAG |  | 
Виробник: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
    Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| NVTFS015P03P8ZTAG |  | 
Виробник: onsemi
Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
    Description: PT8P PORTFOLIO EXPANSION
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 88.6A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 12A, 10V
Power Dissipation (Max): 3.2W (Ta), 88.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2706 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| TIP111TU |  | 
Виробник: onsemi
Description: TRANS NPN DARL 80V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
    Description: TRANS NPN DARL 80V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
товару немає в наявності
    В кошику
     од. на суму     грн.
| MMBF4392 |  | 
Виробник: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
    Description: JFET N-CH 30V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| MMBF4392 |  | 
Виробник: onsemi
Description: JFET N-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
    Description: JFET N-CH 30V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Power - Max: 350 mW
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| SZ1SMB5941BT3 | 
Виробник: onsemi
Description: DIODE ZENER 47V 3W SMB
    Description: DIODE ZENER 47V 3W SMB
товару немає в наявності
    В кошику
     од. на суму     грн.
| 1SMB5941BT3 |  | 
Виробник: onsemi
Description: DIODE ZENER 47V 3W SMB
    Description: DIODE ZENER 47V 3W SMB
на замовлення 26188 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1312+ | 17.37 грн | 
| NCV8160AMX250TBG |  | 
Виробник: onsemi
Description: IC REG LINEAR 2.5V 250MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
    Description: IC REG LINEAR 2.5V 250MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
товару немає в наявності
    В кошику
     од. на суму     грн.
| NCV8160AMX250TBG |  | 
Виробник: onsemi
Description: IC REG LINEAR 2.5V 250MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
    Description: IC REG LINEAR 2.5V 250MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 23 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 91dB ~ 48dB (100Hz ~ 100kHz)
Voltage Dropout (Max): 0.175V @ 250mA
Protection Features: Over Current, Over Temperature
на замовлення 2745 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 8+ | 41.30 грн | 
| 10+ | 33.49 грн | 
| 25+ | 31.25 грн | 
| 100+ | 23.46 грн | 
| 250+ | 21.78 грн | 
| 500+ | 18.43 грн | 
| 1000+ | 14.01 грн | 
| NCP114AMX250TBG |  | 
Виробник: onsemi
Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
    Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 6.95 грн | 
| 6000+ | 6.03 грн | 
| NCP114AMX250TBG |  | 
Виробник: onsemi
Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
    Description: IC REG LINEAR 2.5V 300MA 4-UDFN
Packaging: Cut Tape (CT)
Package / Case: 4-UDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-UDFN (1.0x1.0)
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Protection Features: Over Current, Over Temperature
на замовлення 11870 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 10+ | 34.70 грн | 
| 16+ | 20.21 грн | 
| 25+ | 16.51 грн | 
| 100+ | 11.60 грн | 
| 250+ | 9.69 грн | 
| 500+ | 8.52 грн | 
| 1000+ | 7.40 грн | 
| NCV20092DMR2G |  | 
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
    Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 4000+ | 24.69 грн | 
| NCV20092DMR2G |  | 
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
    Description: IC OPAMP GP 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA (x2 Channels)
Slew Rate: 0.17V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: 8-MSOP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 6+ | 64.44 грн | 
| 10+ | 54.09 грн | 
| 25+ | 50.85 грн | 
| 100+ | 38.93 грн | 
| 250+ | 36.17 грн | 
| 500+ | 30.78 грн | 
| 1000+ | 24.22 грн | 
| NCV68261MTWAITBG |  | 
Виробник: onsemi
Description: IDEAL DIODE AND HS SWITCH NMOS D
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
    Description: IDEAL DIODE AND HS SWITCH NMOS D
Features: Load Discharge
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
    В кошику
     од. на суму     грн.
| NCV68261MTWAITBG |  | 
Виробник: onsemi
Description: IDEAL DIODE AND HS SWITCH NMOS D
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
    Description: IDEAL DIODE AND HS SWITCH NMOS D
Features: Load Discharge
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 3V ~ 32V
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: 6-WDFNW (2x2)
Fault Protection: Over Voltage, Reverse Current, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
товару немає в наявності
    В кошику
     од. на суму     грн.
| FDMS86181 |  | 
Виробник: onsemi
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
    Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 88.16 грн | 
| FDMS86181 |  | 
Виробник: onsemi
Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
    Description: MOSFET N-CH 100V 44A/124A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 44A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4125 pF @ 50 V
на замовлення 8204 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2+ | 266.00 грн | 
| 10+ | 167.13 грн | 
| 100+ | 116.45 грн | 
| 500+ | 88.98 грн | 
| 1000+ | 82.45 грн | 
| NTMFD1D1N02X |  | 
Виробник: onsemi
Description: MOSFET 2N-CH 25V 14A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
    Description: MOSFET 2N-CH 25V 14A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 12V, 4265pF @ 12V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 0.87mOhm @ 37A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 59nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 240µA, 2.1V @ 850µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
на замовлення 375000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 83.27 грн | 
| NCP5010FCT1G |  | 
Виробник: onsemi
Description: IC LED DRV RGLT ANALOG 8FLIPCHIP
    Description: IC LED DRV RGLT ANALOG 8FLIPCHIP
товару немає в наявності
    В кошику
     од. на суму     грн.
| 2N7002V |  | 
Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
    Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 1210 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| 2N7002V |  | 
Виробник: onsemi
Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
    Description: MOSFET 2N-CH 60V 0.28A SOT563F
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 280mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563F
Part Status: Active
на замовлення 2277 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 7+ | 48.74 грн | 
| 11+ | 29.04 грн | 
| 100+ | 18.64 грн | 
| 500+ | 13.29 грн | 
| 1000+ | 11.94 грн | 
| CAT863MTBI-GT3 |  | 
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.38V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
    Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 4.38V
Supplier Device Package: SOT-23-3
DigiKey Programmable: Not Verified
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 761+ | 28.94 грн | 
| CAT863TTBI-GT3 |  | 
Виробник: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
    Description: IC SUPERVISOR 1 CHANNEL SOT23-3
на замовлення 12468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 825+ | 27.18 грн | 
| KSC5305DTU |  | 
Виробник: onsemi
Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
    Description: TRANS NPN 400V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 1V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 75 W
товару немає в наявності
    В кошику
     од. на суму     грн.
| MTD3055V |  | 
Виробник: onsemi
Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
    Description: MOSFET N-CH 60V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 6A, 10V
Power Dissipation (Max): 3.9W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| 2N3820 |  | 
Виробник: onsemi
Description: JFET P-CH 20V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
Voltage - Breakdown (V(BR)GSS): 20 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
    Description: JFET P-CH 20V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 10V
Voltage - Breakdown (V(BR)GSS): 20 V
Supplier Device Package: TO-92-3
Power - Max: 350 mW
Voltage - Cutoff (VGS off) @ Id: 8 V @ 10 µA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
товару немає в наявності
    В кошику
     од. на суму     грн.
| NP3100GBRLG |  | 
Виробник: onsemi
Description: THYRISTOR 275V 80A DO204AC
    Description: THYRISTOR 275V 80A DO204AC
товару немає в наявності
    В кошику
     од. на суму     грн.
| NSVS50031SB3T1G |  | 
Виробник: onsemi
Description: TRANS NPN 50V 3A 3-CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Qualification: AEC-Q101
    Description: TRANS NPN 50V 3A 3-CPH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Qualification: AEC-Q101
товару немає в наявності
    В кошику
     од. на суму     грн.
| NSVS50031SB3T1G |  | 
Виробник: onsemi
Description: TRANS NPN 50V 3A 3-CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Qualification: AEC-Q101
    Description: TRANS NPN 50V 3A 3-CPH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 210mV @ 100mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 3-CPH
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.1 W
Qualification: AEC-Q101
на замовлення 661 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 5+ | 81.78 грн | 
| 10+ | 49.32 грн | 
| 100+ | 32.25 грн | 
| 500+ | 23.36 грн | 
| CPH6121-TL-E | 
Виробник: onsemi
Description: TRANS PNP 12V 3A 6CPH
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 6-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.3 W
    Description: TRANS PNP 12V 3A 6CPH
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 165mV @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 380MHz
Supplier Device Package: 6-CPH
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 1.3 W
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2219+ | 10.97 грн | 
| FDLL400 |  | 
Виробник: onsemi
Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
    Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2500+ | 4.63 грн | 
| 5000+ | 4.26 грн | 
| FDLL400 |  | 
Виробник: onsemi
Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
    Description: DIODE GEN PURP 150V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 7484 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 13+ | 25.61 грн | 
| 19+ | 17.34 грн | 
| 100+ | 8.74 грн | 
| 500+ | 6.70 грн | 
| 1000+ | 4.97 грн | 
| MMUN2113LT3 |  | 
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
    Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
товару немає в наявності
    В кошику
     од. на суму     грн.
| NC7S02M5X-L22090 |  | 
Виробник: onsemi
Description: IC GATE NOR 1CH 2-INP SOT23-5
    Description: IC GATE NOR 1CH 2-INP SOT23-5
на замовлення 114000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 7.56 грн | 
| MUN2112T3 |  | 
Виробник: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
    Description: SMALL SIGNAL BIPOLAR TRANSISTOR
товару немає в наявності
    В кошику
     од. на суму     грн.
| MUN2112T1 |  | 
Виробник: onsemi
Description: TRANS BRT PNP 100MA 50V SC-59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
    Description: TRANS BRT PNP 100MA 50V SC-59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 5323+ | 4.72 грн | 
| NSVMUN2112T1G |  | 
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
    Description: TRANS PREBIAS PNP 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Supplier Device Package: SC-59
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Qualification: AEC-Q101
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 11539+ | 2.36 грн | 
| CPH5541-TL-E |  | 
Виробник: onsemi
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
    Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 3000+ | 12.16 грн | 
| CPH5541-TL-E |  | 
Виробник: onsemi
Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
    Description: TRANS NPN/PNP 40V/30V 0.7A 5CPH
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 10+ | 33.87 грн | 
| 12+ | 28.32 грн | 
| 100+ | 21.15 грн | 
| 500+ | 15.60 грн | 
| 1000+ | 12.05 грн | 
| CPH6001A-TL-E |  | 
Виробник: onsemi
Description: RF TRANS NPN 12V 6.7GHZ 6-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: 6-CPH
    Description: RF TRANS NPN 12V 6.7GHZ 6-CPH
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: 6-CPH
товару немає в наявності
    В кошику
     од. на суму     грн.
| CPH6001A-TL-E |  | 
Виробник: onsemi
Description: RF TRANS NPN 12V 6.7GHZ 6-CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: 6-CPH
    Description: RF TRANS NPN 12V 6.7GHZ 6-CPH
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11dB
Power - Max: 800mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 30mA, 5V
Frequency - Transition: 6.7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Supplier Device Package: 6-CPH
на замовлення 1189 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 7+ | 50.39 грн | 
| 11+ | 29.83 грн | 
| 100+ | 19.16 грн | 
| 500+ | 13.63 грн | 
| 1000+ | 12.22 грн | 
| LV5893M-TE-L-E | 
Виробник: onsemi
Description: STEP DOWN SWITCHING REGULATOR
    Description: STEP DOWN SWITCHING REGULATOR
на замовлення 226000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 1519+ | 15.10 грн | 
| NCP12400CBHAA0DR2G |  | 
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
    Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.9V ~ 28V
Supplier Device Package: 7-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна | 
|---|---|
| 2500+ | 29.80 грн | 
| 5000+ | 26.54 грн | 
| 7500+ | 25.44 грн | 
| 12500+ | 23.78 грн |