| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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74LCX125BQX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA Mounting: SMD Supply voltage: 2...3.6V DC Manufacturer series: LCX Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -40...85°C Technology: CMOS Quiescent current: 10µA Kind of package: reel; tape Case: QFN14 Kind of integrated circuit: buffer; non-inverting Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FMB3904 | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; TSOT23-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.7W Case: TSOT23-6 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NST3904F3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.36W Case: SOT1123 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MURD620CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 6A Reverse recovery time: 35ns Semiconductor structure: common cathode; double Case: DPAK Max. forward voltage: 1.2V Kind of package: reel; tape |
на замовлення 2090 шт: термін постачання 14-30 дні (днів) |
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MMUN2232LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Base-emitter resistor: 4.7kΩ Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 4.7kΩ |
на замовлення 19637 шт: термін постачання 14-30 дні (днів) |
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MMUN2233LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 1818 шт: термін постачання 14-30 дні (днів) |
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MMUN2234LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Base-emitter resistor: 47kΩ Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 22kΩ |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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MMUN2237LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Base-emitter resistor: 22kΩ Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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SMMUN2233LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
на замовлення 4513 шт: термін постачання 14-30 дні (днів) |
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NUF2230XV6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape Case: SOT563 Mounting: SMD Kind of package: reel; tape Semiconductor structure: bidirectional Type of diode: TVS array Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6KE10A | ONSEMI |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15 Type of diode: TVS Peak pulse power dissipation: 0.6kW Breakdown voltage: 9.5V Semiconductor structure: unidirectional Case: DO15 Mounting: THT Max. off-state voltage: 8.55V Leakage current: 10µA Max. forward impulse current: 41A |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCP81151MNTBG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8 Case: DFN8 Mounting: SMD Supply voltage: 4.5...5.5V DC Type of integrated circuit: driver Operating temperature: -40...100°C Kind of integrated circuit: gate driver; high-side; low-side Topology: H-bridge |
на замовлення 1826 шт: термін постачання 14-30 дні (днів) |
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NUF4403MNT1G | ONSEMI |
Category: Filters - integrated circuitsDescription: Filter: digital; EMI; DFN8; Ch: 4 Type of filter: digital Kind of filter: EMI Case: DFN8 Mounting: SMD Number of channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZNUF4403MNT1G | ONSEMI |
Category: Filters - integrated circuitsDescription: Filter: digital; EMI; DFN8; Ch: 4; automotive industry Type of filter: digital Kind of filter: EMI Case: DFN8 Mounting: SMD Number of channels: 4 Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV99 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 8A Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ5V0A | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.7V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.7V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCV5171EDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Mounting: SMD Application: automotive industry Kind of package: reel; tape Case: SO8 Kind of integrated circuit: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTHD4102PT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -16A; 2.1W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Pulsed drain current: -16A Power dissipation: 2.1W Case: ChipFET Gate-source voltage: ±8V On-state resistance: 80mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ATP304-TL-H | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -100A; 90W; ATPAK; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -100A Power dissipation: 90W Case: ATPAK Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MUR1640CTG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; tube; 60ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Case: TO220AB Kind of package: tube Reverse recovery time: 60ns Heatsink thickness: 1.15...1.39mm Max. load current: 16A |
на замовлення 142 шт: термін постачання 14-30 дні (днів) |
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MC74HC574ADWG | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: HC Mounting: SMD Case: SO20-W Operating temperature: -55...125°C Kind of output: 3-state; non-inverting Supply voltage: 2...6V DC Kind of package: tube Trigger: positive-edge-triggered |
на замовлення 64 шт: термін постачання 14-30 дні (днів) |
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MM74HC574WM | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 2...6V DC Trigger: positive-edge-triggered Manufacturer series: HC Quiescent current: 80µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC574ADTR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Kind of output: 3-state; non-inverting Supply voltage: 2...6V DC Trigger: positive-edge-triggered Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74HC574ADWR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -55...125°C Kind of output: 3-state; non-inverting Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: HC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC574MTC | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; HC; SMD; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Family: HC Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: tube Manufacturer series: HC |
товару немає в наявності |
Мінімальне замовлення: 1825 шт В кошику од. на суму грн. | ||||||||||||||||||
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MM74HC574MTCX | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; OUT: 3-state Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Operating temperature: -55...125°C Kind of output: 3-state Supply voltage: 2...6V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: HC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FOD8332 | ONSEMI |
Category: Optocouplers - othersDescription: Optocoupler; SMD; OUT: totem pole; Uinsul: 4243V; SO16; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Kind of output: totem pole Insulation voltage: 4.243kV Case: SO16 Turn-on time: 50ns Turn-off time: 50ns Slew rate: 50kV/μs Max. off-state voltage: 5V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
| FOD8332R2 | ONSEMI |
Category: Optocouplers - UnclassifiedDescription: FOD8332R2 |
на замовлення 750 шт: термін постачання 14-30 дні (днів) |
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NSS40302PDR2G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 3A; SO8 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 40V Power dissipation: 0.576W Polarisation: bipolar Kind of transistor: complementary pair Type of transistor: NPN / PNP Current gain: 200 Case: SO8 Frequency: 100MHz Collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSS40301MDR2G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 40V; 3A; 0.576W; SO8 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 40V Power dissipation: 0.576W Polarisation: bipolar Application: automotive industry Type of transistor: NPN x2 Current gain: 200 Case: SO8 Frequency: 100MHz Collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NSS40300MDR2G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 40V Power dissipation: 0.576W Polarisation: bipolar Type of transistor: PNP x2 Current gain: 220 Case: SO8 Frequency: 100MHz Collector current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SS400T5G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1.2V Kind of package: reel; tape Features of semiconductor devices: small signal Case: SOD523 Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5920BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 6.2V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 6.2V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
на замовлення 4420 шт: термін постачання 14-30 дні (днів) |
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1N5929BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 15V; CASE59; single diode; reel,tape; 1N59xxB Tolerance: ±5% Mounting: THT Manufacturer series: 1N59xxB Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE59 Zener voltage: 15V Type of diode: Zener |
на замовлення 113 шт: термін постачання 14-30 дні (днів) |
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1N5919BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 5.6V; CASE59; single diode; bulk; 1N59xxB Manufacturer series: 1N59xxB Power dissipation: 3W Kind of package: bulk Semiconductor structure: single diode Case: CASE59 Zener voltage: 5.6V Type of diode: Zener Tolerance: ±5% Mounting: THT |
на замовлення 1661 шт: термін постачання 14-30 дні (днів) |
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1N5934BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 24V; CASE59; single diode; bulk; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N59xxB |
на замовлення 748 шт: термін постачання 14-30 дні (днів) |
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1N5919BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 5.6V; CASE59; single diode; reel,tape; 1N59xxB Manufacturer series: 1N59xxB Power dissipation: 3W Kind of package: reel; tape Semiconductor structure: single diode Case: CASE59 Zener voltage: 5.6V Type of diode: Zener Tolerance: ±5% Mounting: THT |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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1N5953BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 150V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 150V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
на замовлення 295 шт: термін постачання 14-30 дні (днів) |
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1N5934BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 24V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5942BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 51V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 51V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N5937BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 33V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 33V Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZX79C3V3-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; Ammo Pack Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1N5938BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 36V; CASE59; single diode; reel,tape; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: THT Tolerance: ±5% Case: CASE59 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N59xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1SMB5938BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZ1SMA5938BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZ1SMB5938BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAV74 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 50V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAV74LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA Type of diode: switching Mounting: SMD Max. off-state voltage: 50V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1V Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 665 шт: термін постачання 14-30 дні (днів) |
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MMUN2217LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 50V Base resistor: 4.7kΩ Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Current gain: 35...60 Kind of package: reel; tape Base-emitter resistor: 10kΩ Case: SOT23; TO236AB Collector current: 0.1A |
на замовлення 5745 шт: термін постачання 14-30 дні (днів) |
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FDB082N15A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 83A; Idm: 468A; 294W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 8.2mΩ Pulsed drain current: 468A Power dissipation: 294W Gate charge: 84nC Polarisation: unipolar Drain current: 83A Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
| NTMFS6D1N08HT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5 Case: DFN5 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.5mΩ Pulsed drain current: 468A Power dissipation: 104W Gate charge: 32nC Polarisation: unipolar Drain current: 89A Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||||
| NVMFS6D1N08HT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5 Case: DFN5 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.5mΩ Pulsed drain current: 468A Power dissipation: 104W Gate charge: 32nC Polarisation: unipolar Drain current: 89A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFSW6D1N08HT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFNW5 Case: DFNW5 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 80V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 5.5mΩ Pulsed drain current: 468A Power dissipation: 104W Gate charge: 32nC Polarisation: unipolar Drain current: 89A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
HUF75639S3ST | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK Mounting: SMD Power dissipation: 200W Gate charge: 130nC Polarisation: unipolar Technology: UltraFET® Drain current: 56A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK On-state resistance: 25mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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HUF75639G3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247 Mounting: THT Power dissipation: 200W Polarisation: unipolar Drain current: 56A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247 On-state resistance: 25mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| HUF75639S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA Mounting: THT Power dissipation: 200W Gate charge: 110nC Polarisation: unipolar Drain current: 56A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO262AA On-state resistance: 25mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| HUF75631S3ST | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 33A; 120W; TO263AB Mounting: SMD Power dissipation: 120W Gate charge: 66nC Polarisation: unipolar Drain current: 33A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO263AB On-state resistance: 40mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
|
LM2904VDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.3V/μs Input offset voltage: 10mV Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LM2904EDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Operating temperature: -40...105°C Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 200nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
NRVUB1660CTT4G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 8A x2 Reverse recovery time: 60ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.5V Max. load current: 16A Max. forward impulse current: 100A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| 74LCX125BQX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 10µA
Kind of package: reel; tape
Case: QFN14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; QFN14; LCX; 10uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 10µA
Kind of package: reel; tape
Case: QFN14
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
товару немає в наявності
В кошику
од. на суму грн.
| FMB3904 |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| NST3904F3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
| MURD620CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 35ns; DPAK; Ufmax: 1.2V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 6A
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Case: DPAK
Max. forward voltage: 1.2V
Kind of package: reel; tape
на замовлення 2090 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.48 грн |
| 13+ | 32.37 грн |
| 15+ | 29.69 грн |
| 20+ | 27.42 грн |
| 50+ | 24.99 грн |
| 100+ | 23.40 грн |
| 200+ | 21.97 грн |
| 500+ | 20.13 грн |
| 1000+ | 18.70 грн |
| MMUN2232LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 4.7kΩ
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 4.7kΩ
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
на замовлення 19637 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.03 грн |
| 74+ | 5.70 грн |
| 107+ | 3.92 грн |
| 126+ | 3.35 грн |
| 250+ | 2.72 грн |
| 500+ | 2.32 грн |
| 1000+ | 2.00 грн |
| 3000+ | 1.59 грн |
| 6000+ | 1.38 грн |
| MMUN2233LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 1818 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 91+ | 4.61 грн |
| 135+ | 3.12 грн |
| 165+ | 2.55 грн |
| 200+ | 2.13 грн |
| 500+ | 1.75 грн |
| 1000+ | 1.53 грн |
| MMUN2234LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 47kΩ
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 47kΩ
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 22kΩ
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 20.97 грн |
| MMUN2237LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 22kΩ
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Base-emitter resistor: 22kΩ
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 47kΩ
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 29.80 грн |
| SMMUN2233LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 4513 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.13 грн |
| 77+ | 5.45 грн |
| 125+ | 3.35 грн |
| 500+ | 2.49 грн |
| 1000+ | 2.18 грн |
| 3000+ | 1.71 грн |
| NUF2230XV6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT563; Ch: 2; reel,tape
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: bidirectional
Type of diode: TVS array
Number of channels: 2
товару немає в наявності
В кошику
од. на суму грн.
| P6KE10A |
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Виробник: ONSEMI
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 9.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Max. off-state voltage: 8.55V
Leakage current: 10µA
Max. forward impulse current: 41A
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 9.5V; 41A; unidirectional; DO15
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 9.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Max. off-state voltage: 8.55V
Leakage current: 10µA
Max. forward impulse current: 41A
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| NCP81151MNTBG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Case: DFN8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: driver
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Case: DFN8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: driver
Operating temperature: -40...100°C
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
на замовлення 1826 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.19 грн |
| 25+ | 17.44 грн |
| 28+ | 15.10 грн |
| 100+ | 13.25 грн |
| NUF4403MNT1G |
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Виробник: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4
Type of filter: digital
Kind of filter: EMI
Case: DFN8
Mounting: SMD
Number of channels: 4
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4
Type of filter: digital
Kind of filter: EMI
Case: DFN8
Mounting: SMD
Number of channels: 4
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| SZNUF4403MNT1G |
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Виробник: ONSEMI
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4; automotive industry
Type of filter: digital
Kind of filter: EMI
Case: DFN8
Mounting: SMD
Number of channels: 4
Application: automotive industry
Category: Filters - integrated circuits
Description: Filter: digital; EMI; DFN8; Ch: 4; automotive industry
Type of filter: digital
Kind of filter: EMI
Case: DFN8
Mounting: SMD
Number of channels: 4
Application: automotive industry
товару немає в наявності
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од. на суму грн.
| BAV99 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| SMBJ5V0A |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.7V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.7V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| NCV5171EDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DC/DC converter
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DC/DC converter
товару немає в наявності
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од. на суму грн.
| NTHD4102PT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -16A; 2.1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; Idm: -16A; 2.1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -16A
Power dissipation: 2.1W
Case: ChipFET
Gate-source voltage: ±8V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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| ATP304-TL-H |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -100A; 90W; ATPAK; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -100A
Power dissipation: 90W
Case: ATPAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -100A; 90W; ATPAK; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -100A
Power dissipation: 90W
Case: ATPAK
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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Мінімальне замовлення: 3000 шт
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| MUR1640CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Case: TO220AB
Kind of package: tube
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 100A; TO220AB; tube; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Case: TO220AB
Kind of package: tube
Reverse recovery time: 60ns
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
на замовлення 142 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 176.12 грн |
| 10+ | 86.38 грн |
| MC74HC574ADWG |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: HC
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Supply voltage: 2...6V DC
Kind of package: tube
Trigger: positive-edge-triggered
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.29 грн |
| 13+ | 34.64 грн |
| 25+ | 31.20 грн |
| 38+ | 29.86 грн |
| MM74HC574WM |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: HC
Quiescent current: 80µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: HC
Quiescent current: 80µA
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| MC74HC574ADTR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: HC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state; non-inverting
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: HC
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| MC74HC574ADWR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; SO20-W; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -55...125°C
Kind of output: 3-state; non-inverting
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HC
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| MM74HC574MTC |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; HC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: HC
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; HC; SMD; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: tube
Manufacturer series: HC
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Мінімальне замовлення: 1825 шт
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| MM74HC574MTCX |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HC
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; OUT: 3-state
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: HC
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Мінімальне замовлення: 2500 шт
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| FOD8332 |
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Виробник: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: totem pole; Uinsul: 4243V; SO16; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: totem pole
Insulation voltage: 4.243kV
Case: SO16
Turn-on time: 50ns
Turn-off time: 50ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: totem pole; Uinsul: 4243V; SO16; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: totem pole
Insulation voltage: 4.243kV
Case: SO16
Turn-on time: 50ns
Turn-off time: 50ns
Slew rate: 50kV/μs
Max. off-state voltage: 5V
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Мінімальне замовлення: 1000 шт
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| FOD8332R2 |
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на замовлення 750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 750+ | 294.43 грн |
| NSS40302PDR2G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 3A; SO8
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.576W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Current gain: 200
Case: SO8
Frequency: 100MHz
Collector current: 3A
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 3A; SO8
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.576W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Current gain: 200
Case: SO8
Frequency: 100MHz
Collector current: 3A
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| NSS40301MDR2G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.576W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN x2
Current gain: 200
Case: SO8
Frequency: 100MHz
Collector current: 3A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.576W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN x2
Current gain: 200
Case: SO8
Frequency: 100MHz
Collector current: 3A
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| NSS40300MDR2G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.576W
Polarisation: bipolar
Type of transistor: PNP x2
Current gain: 220
Case: SO8
Frequency: 100MHz
Collector current: 3A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 3A; 0.576W; SO8
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 40V
Power dissipation: 0.576W
Polarisation: bipolar
Type of transistor: PNP x2
Current gain: 220
Case: SO8
Frequency: 100MHz
Collector current: 3A
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| 1SS400T5G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Case: SOD523
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Case: SOD523
Reverse recovery time: 4ns
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| 1N5920BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 6.2V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 6.2V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
на замовлення 4420 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.51 грн |
| 22+ | 19.62 грн |
| 25+ | 17.19 грн |
| 100+ | 11.66 грн |
| 500+ | 9.64 грн |
| 1000+ | 8.89 грн |
| 1N5929BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; CASE59; single diode; reel,tape; 1N59xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 15V
Type of diode: Zener
Category: THT Zener diodes
Description: Diode: Zener; 3W; 15V; CASE59; single diode; reel,tape; 1N59xxB
Tolerance: ±5%
Mounting: THT
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 15V
Type of diode: Zener
на замовлення 113 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.48 грн |
| 25+ | 17.02 грн |
| 50+ | 13.17 грн |
| 100+ | 11.57 грн |
| 1N5919BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; CASE59; single diode; bulk; 1N59xxB
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 5.6V
Type of diode: Zener
Tolerance: ±5%
Mounting: THT
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; CASE59; single diode; bulk; 1N59xxB
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: bulk
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 5.6V
Type of diode: Zener
Tolerance: ±5%
Mounting: THT
на замовлення 1661 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 19+ | 22.81 грн |
| 22+ | 19.71 грн |
| 50+ | 14.51 грн |
| 100+ | 12.83 грн |
| 500+ | 10.06 грн |
| 1N5934BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; CASE59; single diode; bulk; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; CASE59; single diode; bulk; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N59xxB
на замовлення 748 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.61 грн |
| 22+ | 19.29 грн |
| 27+ | 15.68 грн |
| 35+ | 12.24 грн |
| 100+ | 10.82 грн |
| 1N5919BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; CASE59; single diode; reel,tape; 1N59xxB
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 5.6V
Type of diode: Zener
Tolerance: ±5%
Mounting: THT
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; CASE59; single diode; reel,tape; 1N59xxB
Manufacturer series: 1N59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: CASE59
Zener voltage: 5.6V
Type of diode: Zener
Tolerance: ±5%
Mounting: THT
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.21 грн |
| 1N5953BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 150V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 150V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 150V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 150V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
на замовлення 295 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 12.10 грн |
| 45+ | 10.15 грн |
| 100+ | 8.97 грн |
| 1N5934BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 24V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
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| 1N5942BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 51V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 51V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 51V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
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| 1N5937BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 33V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 33V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
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| BZX79C3V3-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; CASE017AG; single diode; Ammo Pack
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: BZX79C
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| 1N5938BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: CASE59
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 36V; CASE59; single diode; reel,tape; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: THT
Tolerance: ±5%
Case: CASE59
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N59xxB
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| 1SMB5938BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
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| SZ1SMA5938BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| SZ1SMB5938BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| BAV74 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
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Мінімальне замовлення: 25 шт
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| BAV74LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ufmax: 1V; Ifsm: 500mA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 665 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.23 грн |
| 93+ | 4.53 грн |
| 136+ | 3.09 грн |
| 162+ | 2.59 грн |
| 250+ | 2.09 грн |
| 500+ | 1.79 грн |
| MMUN2217LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 35...60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 35...60
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
на замовлення 5745 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 75+ | 5.62 грн |
| 122+ | 3.46 грн |
| 500+ | 2.49 грн |
| 1000+ | 2.16 грн |
| 3000+ | 1.74 грн |
| FDB082N15A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; Idm: 468A; 294W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Pulsed drain current: 468A
Power dissipation: 294W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 83A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; Idm: 468A; 294W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 8.2mΩ
Pulsed drain current: 468A
Power dissipation: 294W
Gate charge: 84nC
Polarisation: unipolar
Drain current: 83A
Kind of channel: enhancement
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Мінімальне замовлення: 800 шт
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| NTMFS6D1N08HT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| NVMFS6D1N08HT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFN5
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
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| NVMFSW6D1N08HT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFNW5
Case: DFNW5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 89A; Idm: 468A; 104W; DFNW5
Case: DFNW5
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Pulsed drain current: 468A
Power dissipation: 104W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 89A
Kind of channel: enhancement
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| HUF75639S3ST |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Mounting: SMD
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 25mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; D2PAK
Mounting: SMD
Power dissipation: 200W
Gate charge: 130nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK
On-state resistance: 25mΩ
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| HUF75639G3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 25mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO247
Mounting: THT
Power dissipation: 200W
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 25mΩ
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| HUF75639S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA
Mounting: THT
Power dissipation: 200W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO262AA
On-state resistance: 25mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 200W; TO262AA
Mounting: THT
Power dissipation: 200W
Gate charge: 110nC
Polarisation: unipolar
Drain current: 56A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO262AA
On-state resistance: 25mΩ
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| HUF75631S3ST |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 120W; TO263AB
Mounting: SMD
Power dissipation: 120W
Gate charge: 66nC
Polarisation: unipolar
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263AB
On-state resistance: 40mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 120W; TO263AB
Mounting: SMD
Power dissipation: 120W
Gate charge: 66nC
Polarisation: unipolar
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO263AB
On-state resistance: 40mΩ
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Мінімальне замовлення: 800 шт
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| LM2904VDR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.3V/μs
Input offset voltage: 10mV
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
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| LM2904EDR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
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| NRVUB1660CTT4G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A x2
Reverse recovery time: 60ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8Ax2; 60ns; D2PAK; Ufmax: 1.5V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A x2
Reverse recovery time: 60ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.5V
Max. load current: 16A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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