| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FAN7930BMX | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 20V Frequency - Switching: 250kHz ~ 350kHz Mode: Critical Conduction (CRM) Supplier Device Package: 8-SOIC Part Status: Obsolete Current - Startup: 120 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FAN7930CM | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOPPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 20V Frequency - Switching: 250kHz ~ 350kHz Mode: Critical Conduction (CRM) Supplier Device Package: 8-SOIC Part Status: Obsolete Current - Startup: 120 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FAN7930CMX | onsemi |
Description: IC PFC CTRLR CRM 350KHZ 8SOPPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 13V ~ 20V Frequency - Switching: 250kHz ~ 350kHz Mode: Critical Conduction (CRM) Supplier Device Package: 8-SOIC Part Status: Obsolete Current - Startup: 120 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FCH47N60NF | onsemi |
Description: MOSFET N-CH 600V 45.8A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V Power Dissipation (Max): 368W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDB016N04AL7 | onsemi |
Description: MOSFET N-CH 40V 160A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V Power Dissipation (Max): 283W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FDD7N25LZTM | onsemi |
Description: MOSFET N-CH 250V 6.2A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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FDD850N10L | onsemi |
Description: MOSFET N-CH 100V 15.7A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FDD86102LZ | onsemi |
Description: MOSFET N-CH 100V 8A/35A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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FDD86250 | onsemi |
Description: MOSFET N-CH 150V 8A/50A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V Power Dissipation (Max): 3.1W (Ta), 132W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FDMC2514SDC | onsemi |
Description: MOSFET N-CH 25V 24A/40A DLCOOL33Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V Power Dissipation (Max): 3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: Dual Cool ™ 33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDMC3020DC | onsemi |
Description: MOSFET N-CH 30V 17A/40A DLCOOL33Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Dual Cool ™ 33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDMC7696 | onsemi |
Description: MOSFET N-CH 30V 12A/20A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 10V Power Dissipation (Max): 2.4W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDMC86102L | onsemi |
Description: MOSFET N-CH 100V 7A/18A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FDMC8622 | onsemi |
Description: MOSFET N-CH 100V 4A/16A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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FDMC86244 | onsemi |
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLPPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V Power Dissipation (Max): 2.3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMS7698 | onsemi |
Description: MOSFET N-CH 30V 13.5A/22A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FDMS86103L | onsemi |
Description: MOSFET N-CH 100V 12A/49A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMS86322 | onsemi |
Description: MOSFET N-CH 80V 13A/60A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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FDN8601 | onsemi |
Description: MOSFET N-CH 100V 2.7A SUPERSOT3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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FDN86246 | onsemi |
Description: MOSFET N-CH 150V 1.6A SUPERSOT3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V |
на замовлення 11400 шт: термін постачання 21-31 дні (днів) |
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FDP12N50NZ | onsemi |
Description: MOSFET N-CH 500V 11.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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FDP12N60NZ | onsemi |
Description: MOSFET N-CH 600V 12A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDP7N60NZ | onsemi |
Description: MOSFET N-CH 600V 6.5A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDPF5N60NZ | onsemi |
Description: MOSFET N-CH 600V 4.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDPF7N60NZ | onsemi |
Description: MOSFET N-CH 600V 6.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDS89141 | onsemi |
Description: MOSFET 2N-CH 100V 3.5A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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FDS8935 | onsemi |
Description: MOSFET 2P-CH 80V 2.1A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDT86102LZ | onsemi |
Description: MOSFET N-CH 100V 6.6A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FDT86106LZ | onsemi |
Description: MOSFET N-CH 100V 3.2A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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FDT86246 | onsemi |
Description: MOSFET N-CH 150V 2A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FGH40N60SMD | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/92ns Switching Energy: 870µJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 119 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 349 W |
на замовлення 206 шт: термін постачання 21-31 дні (днів) |
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FJN3303FBU | onsemi |
Description: TRANS NPN 400V 1.5A TO92-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJN3303FTA | onsemi |
Description: TRANS NPN 400V 1.5A TO92-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FJX992TF | onsemi |
Description: TRANS PNP 120V 0.1A SOT-323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 235 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FL6300AMY | onsemi |
Description: IC LED DRIVER CTRLR PWM 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 1 Type: DC DC Controller Operating Temperature: -40°C ~ 125°C (TA) Applications: Lighting Internal Switch(s): No Topology: Flyback Supplier Device Package: 8-SOIC Dimming: PWM Voltage - Supply (Min): 10V Voltage - Supply (Max): 25V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FLS2100XS | onsemi |
Description: IC LED DRIVER RGLTR 10.5A 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Number of Outputs: 1 Type: DC DC Regulator Operating Temperature: -40°C ~ 130°C (TJ) Applications: Lighting Current - Output / Channel: 10.5A Internal Switch(s): Yes Supplier Device Package: 9-SIP Part Status: Active |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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FNA41560B2 | onsemi |
Description: MODULE SPM 600V 15A 26PWRDIPPackaging: Tube Package / Case: 26-PowerDIP Module (1.024", 26.00mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Active Current: 15 A Voltage: 600 V |
на замовлення 950 шт: термін постачання 21-31 дні (днів) |
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FPAB20BH60B | onsemi |
Description: MODULE SPM 600V 20A SPMICPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 1 Phase Voltage - Isolation: 2500Vrms Part Status: Not For New Designs Current: 20 A Voltage: 600 V |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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FQD30N06TM | onsemi |
Description: MOSFET N-CH 60V 22.7A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V Power Dissipation (Max): 2.5W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSFR1700XS | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Last Time Buy Power (Watts): 200 W |
на замовлення 194 шт: термін постачання 21-31 дні (днів) |
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FSFR1700XSL | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Last Time Buy Power (Watts): 200 W |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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FSFR1800XS | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Last Time Buy Power (Watts): 260 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSFR1800XSL | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Obsolete Power (Watts): 260 W |
на замовлення 219 шт: термін постачання 21-31 дні (днів) |
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FSFR2100XSL | onsemi |
Description: IC OFFLINE SW HALF-BRIDGE 9SIPPackaging: Tube Package / Case: 10-SIP Module, 9 Leads, Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 130°C (TJ) Duty Cycle: 50% Frequency - Switching: Up to 300kHz Internal Switch(s): Yes Voltage - Breakdown: 500V Output Isolation: Isolated Topology: Half-Bridge Voltage - Supply (Vcc/Vdd): 10V ~ 25V Supplier Device Package: 9-SIP (L forming) Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 12.5 V Control Features: Frequency Control Part Status: Obsolete Power (Watts): 400 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FSQ0265RLX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8LSOPPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Frequency - Switching: 55kHz ~ 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: 8-LSOP Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 12 V Control Features: Sync Part Status: Last Time Buy Power (Watts): 20 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FUSB2805MLX | onsemi |
Description: IC TRANSCEIVER FULL 1/1 32MLPPackaging: Tape & Reel (TR) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 4.5V Number of Drivers/Receivers: 1/1 Data Rate: 480Mbps Protocol: USB 2.0 Supplier Device Package: 32-MLP (5x5) Duplex: Full Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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FXMA2102UMX | onsemi |
Description: IC XLTR VL BIDIR 8-UMLPPackaging: Tape & Reel (TR) Package / Case: 8-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 37MHz Supplier Device Package: 8-UMLP (1.2x1.4) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NC7SVL08FHX | onsemi |
Description: IC GATE AND 1CH 2-INP 6MICROPAK2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NC7SZ34UCX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 4-WLCSPPackaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 4-WLCSP (0.76x0.76) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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NC7WZ07FHX | onsemi |
Description: IC BUF NON-INVERT 5.5V 6MICROPK2Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: -, 32mA Supplier Device Package: 6-MicroPak2™ |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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FOD3184SD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FOD3184SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: IEC/EN/DIN, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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FOD3184TSD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Not For New Designs Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD3184TSDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: IEC/EN/DIN, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Not For New Designs Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FOD8012R2 | onsemi |
Description: OPTOISO 3.75KV 2CH PUSH PULL 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Data Rate: 15Mbps Input Type: Logic Voltage - Isolation: 3750Vrms Inputs - Side 1/Side 2: 1/1 Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 6.5ns, 6.5ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 60ns, 60ns Number of Channels: 2 Current - Output / Channel: 10 mA |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FOD3184S | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 1081 шт: термін постачання 21-31 дні (днів) |
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FPF2700MX | onsemi |
Description: IC PWR SWITCH N-CHANNEL 1:1 8SOPackaging: Tape & Reel (TR) Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 88mOhm Input Type: Non-Inverting Voltage - Load: 2.8V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO Part Status: Last Time Buy |
на замовлення 61 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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FPF2700MPX | onsemi |
Description: IC PWR SWITCH N-CHAN 1:1 8MLPPackaging: Tape & Reel (TR) Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag Package / Case: 8-WDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 88mOhm Input Type: Non-Inverting Voltage - Load: 2.8V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-MLP (3x3) Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FPF2700MPX | onsemi |
Description: IC PWR SWITCH N-CHAN 1:1 8MLPPackaging: Cut Tape (CT) Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag Package / Case: 8-WDFN Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 88mOhm Input Type: Non-Inverting Voltage - Load: 2.8V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-MLP (3x3) Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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FPF2700MX | onsemi |
Description: IC PWR SWITCH N-CHANNEL 1:1 8SOPackaging: Cut Tape (CT) Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 88mOhm Input Type: Non-Inverting Voltage - Load: 2.8V ~ 36V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2A Ratio - Input:Output: 1:1 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO Part Status: Last Time Buy |
на замовлення 614 шт: термін постачання 21-31 дні (днів) |
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| FAN7930BMX |
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Виробник: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
товару немає в наявності
В кошику
од. на суму грн.
| FAN7930CM |
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Виробник: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
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| FAN7930CMX |
![]() |
Виробник: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
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| FCH47N60NF |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 45.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 600V 45.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.8A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 23.5A, 10V
Power Dissipation (Max): 368W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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| FDB016N04AL7 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
Description: MOSFET N-CH 40V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11600 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 140.10 грн |
| FDD7N25LZTM |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 250V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Description: MOSFET N-CH 250V 6.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 3.1A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 25.67 грн |
| 5000+ | 22.86 грн |
| 7500+ | 21.92 грн |
| FDD850N10L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 15.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
Description: MOSFET N-CH 100V 15.7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 35.18 грн |
| 5000+ | 32.21 грн |
| FDD86102LZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 8A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V
Description: MOSFET N-CH 100V 8A/35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1540 pF @ 50 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 46.71 грн |
| 5000+ | 42.51 грн |
| FDD86250 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 8A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
Description: MOSFET N-CH 150V 8A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 63.94 грн |
| FDMC2514SDC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
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| FDMC3020DC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
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| FDMC7696 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 12A/20A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
Description: MOSFET N-CH 30V 12A/20A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 10V
Power Dissipation (Max): 2.4W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 15 V
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| FDMC86102L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 44.36 грн |
| 6000+ | 40.91 грн |
| FDMC8622 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 4A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
Description: MOSFET N-CH 100V 4A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 48.11 грн |
| 6000+ | 45.36 грн |
| FDMC86244 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 36.53 грн |
| 6000+ | 32.80 грн |
| FDMS7698 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 22.51 грн |
| 6000+ | 20.53 грн |
| 9000+ | 19.01 грн |
| FDMS86103L |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 12A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 50 V
Description: MOSFET N-CH 100V 12A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 85.03 грн |
| FDMS86322 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: MOSFET N-CH 80V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 76.67 грн |
| FDN8601 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 30.11 грн |
| 6000+ | 28.01 грн |
| 9000+ | 27.91 грн |
| FDN86246 |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 150V 1.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V
Description: MOSFET N-CH 150V 1.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 261mOhm @ 1.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 75 V
на замовлення 11400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 38.28 грн |
| 6000+ | 34.48 грн |
| FDP12N50NZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 500V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
Description: MOSFET N-CH 500V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FDP12N60NZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
товару немає в наявності
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од. на суму грн.
| FDP7N60NZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 6.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Description: MOSFET N-CH 600V 6.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
товару немає в наявності
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од. на суму грн.
| FDPF5N60NZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 4.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 600V 4.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
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| FDPF7N60NZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 600V 6.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
Description: MOSFET N-CH 600V 6.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3.25A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V
товару немає в наявності
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од. на суму грн.
| FDS89141 |
![]() |
Виробник: onsemi
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 89.52 грн |
| FDS8935 |
![]() |
Виробник: onsemi
Description: MOSFET 2P-CH 80V 2.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V
Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2P-CH 80V 2.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 40V
Rds On (Max) @ Id, Vgs: 183mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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од. на суму грн.
| FDT86102LZ |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 100V 6.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V
Description: MOSFET N-CH 100V 6.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 6.6A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 50 V
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| FDT86106LZ |
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Виробник: onsemi
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 38.86 грн |
| FDT86246 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
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| FGH40N60SMD |
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Виробник: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 349 W
на замовлення 206 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 408.15 грн |
| 30+ | 222.00 грн |
| 120+ | 184.31 грн |
| FJN3303FBU |
![]() |
Виробник: onsemi
Description: TRANS NPN 400V 1.5A TO92-3
Description: TRANS NPN 400V 1.5A TO92-3
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| FJN3303FTA |
![]() |
Виробник: onsemi
Description: TRANS NPN 400V 1.5A TO92-3
Description: TRANS NPN 400V 1.5A TO92-3
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| FJX992TF |
![]() |
Виробник: onsemi
Description: TRANS PNP 120V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 235 mW
Description: TRANS PNP 120V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 235 mW
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| FL6300AMY |
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Виробник: onsemi
Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 10V
Voltage - Supply (Max): 25V
Part Status: Obsolete
Description: IC LED DRIVER CTRLR PWM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Min): 10V
Voltage - Supply (Max): 25V
Part Status: Obsolete
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| FLS2100XS |
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Виробник: onsemi
Description: IC LED DRIVER RGLTR 10.5A 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Number of Outputs: 1
Type: DC DC Regulator
Operating Temperature: -40°C ~ 130°C (TJ)
Applications: Lighting
Current - Output / Channel: 10.5A
Internal Switch(s): Yes
Supplier Device Package: 9-SIP
Part Status: Active
Description: IC LED DRIVER RGLTR 10.5A 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Number of Outputs: 1
Type: DC DC Regulator
Operating Temperature: -40°C ~ 130°C (TJ)
Applications: Lighting
Current - Output / Channel: 10.5A
Internal Switch(s): Yes
Supplier Device Package: 9-SIP
Part Status: Active
на замовлення 102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 487.73 грн |
| 10+ | 421.71 грн |
| 25+ | 398.70 грн |
| 100+ | 307.64 грн |
| FNA41560B2 |
![]() |
Виробник: onsemi
Description: MODULE SPM 600V 15A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
Description: MODULE SPM 600V 15A 26PWRDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1232.15 грн |
| 12+ | 820.06 грн |
| 108+ | 639.67 грн |
| 504+ | 594.53 грн |
| FPAB20BH60B |
![]() |
Виробник: onsemi
Description: MODULE SPM 600V 20A SPMIC
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Not For New Designs
Current: 20 A
Voltage: 600 V
Description: MODULE SPM 600V 20A SPMIC
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 1 Phase
Voltage - Isolation: 2500Vrms
Part Status: Not For New Designs
Current: 20 A
Voltage: 600 V
на замовлення 57 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1619.77 грн |
| FQD30N06TM |
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Виробник: onsemi
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
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| FSFR1700XS |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
на замовлення 194 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 347.40 грн |
| 10+ | 300.50 грн |
| 25+ | 284.07 грн |
| 100+ | 231.06 грн |
| FSFR1700XSL |
![]() |
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 200 W
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 278.09 грн |
| 10+ | 240.27 грн |
| FSFR1800XS |
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Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 260 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
Power (Watts): 260 W
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| FSFR1800XSL |
![]() |
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 260 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 260 W
на замовлення 219 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 355.10 грн |
| 19+ | 198.40 грн |
| 38+ | 177.57 грн |
| 114+ | 141.91 грн |
| FSFR2100XSL |
![]() |
Виробник: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 400 W
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Obsolete
Power (Watts): 400 W
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| FSQ0265RLX |
![]() |
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Last Time Buy
Power (Watts): 20 W
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| FUSB2805MLX |
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Виробник: onsemi
Description: IC TRANSCEIVER FULL 1/1 32MLP
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 32MLP
Packaging: Tape & Reel (TR)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 117.38 грн |
| 6000+ | 110.92 грн |
| FXMA2102UMX |
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Виробник: onsemi
Description: IC XLTR VL BIDIR 8-UMLP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 37MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 8-UMLP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 37MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
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| NC7SVL08FHX |
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Виробник: onsemi
Description: IC GATE AND 1CH 2-INP 6MICROPAK2
Description: IC GATE AND 1CH 2-INP 6MICROPAK2
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| NC7SZ34UCX |
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Виробник: onsemi
Description: IC BUFF NON-INVERT 5.5V 4-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 4-WLCSP (0.76x0.76)
Part Status: Obsolete
Description: IC BUFF NON-INVERT 5.5V 4-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 4-WLCSP (0.76x0.76)
Part Status: Obsolete
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| NC7WZ07FHX |
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Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 6MICROPK2
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-MicroPak2™
Description: IC BUF NON-INVERT 5.5V 6MICROPK2
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: 6-MicroPak2™
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 8.15 грн |
| FOD3184SD |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 120.21 грн |
| 2000+ | 111.12 грн |
| 3000+ | 108.74 грн |
| 5000+ | 99.53 грн |
| FOD3184SDV |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 103.72 грн |
| 2000+ | 95.73 грн |
| 3000+ | 93.60 грн |
| 5000+ | 85.59 грн |
| 7000+ | 84.25 грн |
| FOD3184TSD |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Not For New Designs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Not For New Designs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
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| FOD3184TSDV |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Not For New Designs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Not For New Designs
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
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| FOD8012R2 |
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Виробник: onsemi
Description: OPTOISO 3.75KV 2CH PUSH PULL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Data Rate: 15Mbps
Input Type: Logic
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6.5ns, 6.5ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 2
Current - Output / Channel: 10 mA
Description: OPTOISO 3.75KV 2CH PUSH PULL 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Data Rate: 15Mbps
Input Type: Logic
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 1/1
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 6.5ns, 6.5ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 60ns, 60ns
Number of Channels: 2
Current - Output / Channel: 10 mA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 154.73 грн |
| FOD3184S |
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Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 1081 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 209.64 грн |
| 50+ | 107.00 грн |
| 100+ | 98.77 грн |
| 500+ | 79.72 грн |
| 1000+ | 75.73 грн |
| FPF2700MX |
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Виробник: onsemi
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Tape & Reel (TR)
Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 88mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Last Time Buy
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Tape & Reel (TR)
Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 88mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Last Time Buy
на замовлення 61 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| FPF2700MPX |
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Виробник: onsemi
Description: IC PWR SWITCH N-CHAN 1:1 8MLP
Packaging: Tape & Reel (TR)
Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag
Package / Case: 8-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 88mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MLP (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Description: IC PWR SWITCH N-CHAN 1:1 8MLP
Packaging: Tape & Reel (TR)
Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag
Package / Case: 8-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 88mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MLP (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
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| FPF2700MPX |
![]() |
Виробник: onsemi
Description: IC PWR SWITCH N-CHAN 1:1 8MLP
Packaging: Cut Tape (CT)
Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag
Package / Case: 8-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 88mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MLP (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Description: IC PWR SWITCH N-CHAN 1:1 8MLP
Packaging: Cut Tape (CT)
Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag
Package / Case: 8-WDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 88mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-MLP (3x3)
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
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| FPF2700MX |
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Виробник: onsemi
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 88mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Last Time Buy
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart, Power Good, Slew Rate Controlled, Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 88mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Part Status: Last Time Buy
на замовлення 614 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 367.93 грн |
| 10+ | 318.30 грн |
| 25+ | 300.95 грн |
| 100+ | 244.77 грн |
| 250+ | 232.22 грн |
| 500+ | 208.37 грн |
















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