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NLV74HCT541ADWG NLV74HCT541ADWG onsemi mc74hct541a-d.pdf Description: IC BUF NON-INVERT 5.5V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
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NLV74HCT541ADWRG NLV74HCT541ADWRG onsemi Description: IC BUF NON-INVERT 5.5V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
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NLV74HCU04ADG NLV74HCU04ADG onsemi mc74hcu04a-d.pdf Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.1V
Max Propagation Delay @ V, Max CL: 18ns @ 6V, 50pF
Grade: Automotive
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLV74HCU04ADR2G NLV74HCU04ADR2G onsemi mc74hcu04a-d.pdf Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.1V
Max Propagation Delay @ V, Max CL: 18ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLV74VHC1GT02DTT1G NLV74VHC1GT02DTT1G onsemi Description: IC GATE NOR 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLV74VHC1GT32DTT1G NLV74VHC1GT32DTT1G onsemi Description: IC GATE OR 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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NLV74VHCT00ADTR2G NLV74VHCT00ADTR2G onsemi mc74vhct00a-d.pdf Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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NLVVHC1G09DFT1G NLVVHC1G09DFT1G onsemi mc74vhc1g09-d.pdf Description: IC GATE AND 1CH 2-INP SC88A
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: -, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - Low: 0.1V ~ 0.44V
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+4.01 грн
6000+3.48 грн
Мінімальне замовлення: 3000
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NLVVHC1G125DFT1G NLVVHC1G125DFT1G onsemi mc74vhc1g125-d.pdf Description: IC BUFFER NON-INVERT 5.5V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+12.30 грн
6000+11.03 грн
Мінімальне замовлення: 3000
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NLX3G14FMUTCG NLX3G14FMUTCG onsemi nlx3g14-d.pdf Description: IC INVERT SCHMITT 3CH 3INP 8UDFN
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 8-UDFN (1.45x1)
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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NOIP1FN2000A-QDI NOIP1FN2000A-QDI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR 2MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 230.0
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NOIP1FN5000A-QDI NOIP1FN5000A-QDI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR 5MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 100.0
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NOIP1SE2000A-QDI NOIP1SE2000A-QDI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR 2MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1984H x 1264V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 230.0
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NOIP1SE5000A-QDI NOIP1SE5000A-QDI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR 5MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 100.0
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NOIP1SN2000A-QDI NOIP1SN2000A-QDI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR 2MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 230.0
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NOIP1SN5000A-QDI NOIP1SN5000A-QDI onsemi noip1sn5000a-d.pdf Description: IC IMAGE SENSOR 5MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 100.0
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NOIV1SN012KA-GDI onsemi NOIV1SN016KA,2KA.pdf Description: IC IMAGE SENSOR 12MP 355PGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 355-µPGA
Frames per Second: 80
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NOIV1SN016KA-GDI onsemi NOIV1SN016KA%2C2KA.pdf Description: IC IMAGE SENSOR 16MP 355PGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 355-µPGA
Part Status: Obsolete
Frames per Second: 80
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NRVBSS26T3G NRVBSS26T3G onsemi ss26-d.pdf Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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NRVHP120SFT3G NRVHP120SFT3G onsemi nhp120sf-d.pdf Description: DIODE STANDARD 200V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+10.20 грн
Мінімальне замовлення: 10000
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NRVHPM120T3G NRVHPM120T3G onsemi nhpm120-d.pdf Description: DIODE GEN PURP 200V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NSBC123TPDP6T5G NSBC123TPDP6T5G onsemi dtc123tp-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-963
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NSBC144WPDP6T5G NSBC144WPDP6T5G onsemi dtc144wp-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
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NSR02F30MXT5G NSR02F30MXT5G onsemi nsr02f30mx-d.pdf Description: DIODE SCHOTTKY 30V 200MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+4.17 грн
Мінімальне замовлення: 10000
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NSS60100DMTTBG NSS60100DMTTBG onsemi nss60100dmt-d.pdf Description: TRANS 2PNP 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
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NSV40302PDR2G NSV40302PDR2G onsemi nss40302p-d.pdf Description: TRANS NPN/PNP 40V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
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NSVBAS21M3T5G NSVBAS21M3T5G onsemi bas21m3-d.pdf Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+2.37 грн
Мінімальне замовлення: 8000
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NSVBAV99WT3G NSVBAV99WT3G onsemi bav99wt1-d.pdf Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
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NSVDAP222T1G NSVDAP222T1G onsemi Description: DIODE SW 80V DUAL SC75-3
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NSVDTA144EET1G NSVDTA144EET1G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NSVJ3557SA3T1G NSVJ3557SA3T1G onsemi nsvj3557sa3-d.pdf Description: JFET N-CH 15V 50MA SC59-3/CP3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SC-59-3/CP3
Grade: Automotive
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+13.30 грн
6000+12.21 грн
9000+11.66 грн
15000+10.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVMMBTA05LT1G NSVMMBTA05LT1G onsemi mmbta05lt1-d.pdf Description: TRANS NPN 60V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+5.30 грн
6000+4.61 грн
9000+4.35 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVMUN5333DW1T3G NSVMUN5333DW1T3G onsemi dtc143zp-d.pdf Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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NSVR0240P2T5G NSVR0240P2T5G onsemi nsr0240p2-d.pdf Description: DIODE SCHOTTKY 40V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
8000+14.12 грн
16000+12.08 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
NSVR1020MW2T1G NSVR1020MW2T1G onsemi nsr1020mw2t1-d.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Qualification: AEC-Q101
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
3000+5.62 грн
6000+4.90 грн
9000+4.64 грн
15000+4.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVRB751S40T1G NSVRB751S40T1G onsemi rb751s40t1-d.pdf Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+1.97 грн
6000+1.81 грн
9000+1.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVT3904DP6T5G NSVT3904DP6T5G onsemi nst3904dp6-d.pdf Description: TRANS 2NPN 40V 200MA SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-963
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NSVT3946DP6T5G NSVT3946DP6T5G onsemi nst3946dp6-d.pdf Description: TRANS NPN/PNP 40V 200MA SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 100 @ 10mA, 1V
Frequency - Transition: 200MHz, 250MHz
Supplier Device Package: SOT-963
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NTMFD4C20NT1G NTMFD4C20NT1G onsemi ntmfd4c20n-d.pdf Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.09W, 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFD4C20NT3G NTMFD4C20NT3G onsemi ntmfd4c20n-d.pdf Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.09W, 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFS4931NT1G NTMFS4931NT1G onsemi ntmfs4931n-d.pdf Description: MOSFET N-CH 30V 23A/246A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
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NTMFS4C06NAT1G onsemi Description: MOSFET N-CH 30V 11A SO8FL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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NTMFS4C10NAT1G onsemi Description: MOSFET N-CH 30V 8.2A SO8FL
Packaging: Tape & Reel (TR)
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NTMFS4C13NT1G NTMFS4C13NT1G onsemi ntmfs4c13n-d.pdf Description: MOSFET N-CH 30V 7.2A/38A 5DFN
Packaging: Tape & Reel (TR)
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NTMFS4C13NT3G NTMFS4C13NT3G onsemi ntmfs4c13n-d.pdf Description: MOSFET N-CH 30V 7.2A/38A 5DFN
Packaging: Tape & Reel (TR)
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NTMFS4C800NT1G onsemi Description: MOSFET N-CH 30V 69A SO8FL
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NTMFS5C612NLWFT1G NTMFS5C612NLWFT1G onsemi Description: MOSFET N-CH 60V 235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
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NTR5103NT1G NTR5103NT1G onsemi ntr5103n-d.pdf Description: MOSFET N-CH 60V 260MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
3000+2.06 грн
6000+1.87 грн
9000+1.76 грн
15000+1.60 грн
21000+1.55 грн
30000+1.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTTFS4C05NTAG NTTFS4C05NTAG onsemi nttfs4c05n-d.pdf Description: MOSFET N-CH 30V 12A/75A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 820mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V
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NTTFS4C10NTAG NTTFS4C10NTAG onsemi nttfs4c10n-d.pdf Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
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NTTFS4C10NTWG NTTFS4C10NTWG onsemi nttfs4c10n-d.pdf Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
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NVMFS5113PLT1G NVMFS5113PLT1G onsemi nvmfs5113pl-d.pdf Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+80.70 грн
3000+76.20 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFS5C404NT3G NVMFS5C404NT3G onsemi nvmfs5c404n-d.pdf Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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NVMFS5C404NWFT1G NVMFS5C404NWFT1G onsemi nvmfs5c404n-d.pdf Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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NVMFS5C404NWFT3G NVMFS5C404NWFT3G onsemi nvmfs5c404n-d.pdf Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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NVMFS5C423NLT3G NVMFS5C423NLT3G onsemi nvmfs5c423nl-d.pdf Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5C423NLWFT1G NVMFS5C423NLWFT1G onsemi nvmfs5c423nl-d.pdf Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5C423NLWFT3G NVMFS5C423NLWFT3G onsemi nvmfs5c423nl-d.pdf Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5C670NLWFT1G NVMFS5C670NLWFT1G onsemi nvmfs5c670nl-d.pdf Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C670NLWFT3G NVMFS5C670NLWFT3G onsemi nvmfs5c670nl-d.pdf Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
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NLV74HCT541ADWG mc74hct541a-d.pdf
NLV74HCT541ADWG
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
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NLV74HCT541ADWRG
NLV74HCT541ADWRG
Виробник: onsemi
Description: IC BUF NON-INVERT 5.5V 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
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NLV74HCU04ADG mc74hcu04a-d.pdf
NLV74HCU04ADG
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.1V
Max Propagation Delay @ V, Max CL: 18ns @ 6V, 50pF
Grade: Automotive
Part Status: Obsolete
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLV74HCU04ADR2G mc74hcu04a-d.pdf
NLV74HCU04ADR2G
Виробник: onsemi
Description: IC INVERTER 6CH 1-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.7V ~ 4.8V
Input Logic Level - Low: 0.3V ~ 1.1V
Max Propagation Delay @ V, Max CL: 18ns @ 6V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLV74VHC1GT02DTT1G
NLV74VHC1GT02DTT1G
Виробник: onsemi
Description: IC GATE NOR 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLV74VHC1GT32DTT1G
NLV74VHC1GT32DTT1G
Виробник: onsemi
Description: IC GATE OR 1CH 2-INP 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-TSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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NLV74VHCT00ADTR2G mc74vhct00a-d.pdf
NLV74VHCT00ADTR2G
Виробник: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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NLVVHC1G09DFT1G mc74vhc1g09-d.pdf
NLVVHC1G09DFT1G
Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC88A
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: -, 8mA
Number of Inputs: 2
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Input Logic Level - Low: 0.1V ~ 0.44V
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.01 грн
6000+3.48 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NLVVHC1G125DFT1G mc74vhc1g125-d.pdf
NLVVHC1G125DFT1G
Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.30 грн
6000+11.03 грн
Мінімальне замовлення: 3000
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NLX3G14FMUTCG nlx3g14-d.pdf
NLX3G14FMUTCG
Виробник: onsemi
Description: IC INVERT SCHMITT 3CH 3INP 8UDFN
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 8-UDFN (1.45x1)
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 1 µA
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NOIP1FN2000A-QDI noip1sn5000a-d.pdf
NOIP1FN2000A-QDI
Виробник: onsemi
Description: IC IMAGE SENSOR 2MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 230.0
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NOIP1FN5000A-QDI noip1sn5000a-d.pdf
NOIP1FN5000A-QDI
Виробник: onsemi
Description: IC IMAGE SENSOR 5MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 100.0
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NOIP1SE2000A-QDI noip1sn5000a-d.pdf
NOIP1SE2000A-QDI
Виробник: onsemi
Description: IC IMAGE SENSOR 2MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 1984H x 1264V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 230.0
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NOIP1SE5000A-QDI noip1sn5000a-d.pdf
NOIP1SE5000A-QDI
Виробник: onsemi
Description: IC IMAGE SENSOR 5MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 100.0
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NOIP1SN2000A-QDI noip1sn5000a-d.pdf
NOIP1SN2000A-QDI
Виробник: onsemi
Description: IC IMAGE SENSOR 2MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 230.0
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NOIP1SN5000A-QDI noip1sn5000a-d.pdf
NOIP1SN5000A-QDI
Виробник: onsemi
Description: IC IMAGE SENSOR 5MP 84LCC
Packaging: Tray
Package / Case: 84-LCC
Type: CMOS with Processor
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.8µm x 4.8µm
Active Pixel Array: 2592H x 2048V
Supplier Device Package: 84-LCC (19x19)
Part Status: Obsolete
Frames per Second: 100.0
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NOIV1SN012KA-GDI NOIV1SN016KA,2KA.pdf
Виробник: onsemi
Description: IC IMAGE SENSOR 12MP 355PGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 4096H x 4096V
Supplier Device Package: 355-µPGA
Frames per Second: 80
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NOIV1SN016KA-GDI NOIV1SN016KA%2C2KA.pdf
Виробник: onsemi
Description: IC IMAGE SENSOR 16MP 355PGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.8V ~ 3.3V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 4096H x 3072V
Supplier Device Package: 355-µPGA
Part Status: Obsolete
Frames per Second: 80
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NRVBSS26T3G ss26-d.pdf
NRVBSS26T3G
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 2A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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NRVHP120SFT3G nhp120sf-d.pdf
NRVHP120SFT3G
Виробник: onsemi
Description: DIODE STANDARD 200V 1A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+10.20 грн
Мінімальне замовлення: 10000
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NRVHPM120T3G nhpm120-d.pdf
NRVHPM120T3G
Виробник: onsemi
Description: DIODE GEN PURP 200V 1A POWERMITE
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Powermite
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Qualification: AEC-Q101
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NSBC123TPDP6T5G dtc123tp-d.pdf
NSBC123TPDP6T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-963
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NSBC144WPDP6T5G dtc144wp-d.pdf
NSBC144WPDP6T5G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SOT-963
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NSR02F30MXT5G nsr02f30mx-d.pdf
NSR02F30MXT5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+4.17 грн
Мінімальне замовлення: 10000
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NSS60100DMTTBG nss60100dmt-d.pdf
NSS60100DMTTBG
Виробник: onsemi
Description: TRANS 2PNP 60V 1A
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.27W
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
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NSV40302PDR2G nss40302p-d.pdf
NSV40302PDR2G
Виробник: onsemi
Description: TRANS NPN/PNP 40V 3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
товару немає в наявності
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NSVBAS21M3T5G bas21m3-d.pdf
NSVBAS21M3T5G
Виробник: onsemi
Description: DIODE STANDARD 250V 200MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-723
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+2.37 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
NSVBAV99WT3G bav99wt1-d.pdf
NSVBAV99WT3G
Виробник: onsemi
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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NSVDAP222T1G
NSVDAP222T1G
Виробник: onsemi
Description: DIODE SW 80V DUAL SC75-3
товару немає в наявності
В кошику  од. на суму  грн.
NSVDTA144EET1G dta144e-d.pdf
NSVDTA144EET1G
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NSVJ3557SA3T1G nsvj3557sa3-d.pdf
NSVJ3557SA3T1G
Виробник: onsemi
Description: JFET N-CH 15V 50MA SC59-3/CP3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Voltage - Breakdown (V(BR)GSS): 15 V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: SC-59-3/CP3
Grade: Automotive
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.30 грн
6000+12.21 грн
9000+11.66 грн
15000+10.50 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVMMBTA05LT1G mmbta05lt1-d.pdf
NSVMMBTA05LT1G
Виробник: onsemi
Description: TRANS NPN 60V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 225 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.30 грн
6000+4.61 грн
9000+4.35 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVMUN5333DW1T3G dtc143zp-d.pdf
NSVMUN5333DW1T3G
Виробник: onsemi
Description: TRANS PREBIAS NPN/PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
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NSVR0240P2T5G nsr0240p2-d.pdf
NSVR0240P2T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 40 V
Qualification: AEC-Q101
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+14.12 грн
16000+12.08 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
NSVR1020MW2T1G nsr1020mw2t1-d.pdf
NSVR1020MW2T1G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Qualification: AEC-Q101
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.62 грн
6000+4.90 грн
9000+4.64 грн
15000+4.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVRB751S40T1G rb751s40t1-d.pdf
NSVRB751S40T1G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+1.97 грн
6000+1.81 грн
9000+1.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVT3904DP6T5G nst3904dp6-d.pdf
NSVT3904DP6T5G
Виробник: onsemi
Description: TRANS 2NPN 40V 200MA SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-963
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NSVT3946DP6T5G nst3946dp6-d.pdf
NSVT3946DP6T5G
Виробник: onsemi
Description: TRANS NPN/PNP 40V 200MA SOT-963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V / 100 @ 10mA, 1V
Frequency - Transition: 200MHz, 250MHz
Supplier Device Package: SOT-963
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NTMFD4C20NT1G ntmfd4c20n-d.pdf
NTMFD4C20NT1G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.09W, 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFD4C20NT3G ntmfd4c20n-d.pdf
NTMFD4C20NT3G
Виробник: onsemi
Description: MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.09W, 1.15W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9.1A, 13.7A
Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 15V
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
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NTMFS4931NT1G ntmfs4931n-d.pdf
NTMFS4931NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 23A/246A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 246A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 950mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9821 pF @ 15 V
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NTMFS4C06NAT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 11A SO8FL
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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NTMFS4C10NAT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A SO8FL
Packaging: Tape & Reel (TR)
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NTMFS4C13NT1G ntmfs4c13n-d.pdf
NTMFS4C13NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 7.2A/38A 5DFN
Packaging: Tape & Reel (TR)
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NTMFS4C13NT3G ntmfs4c13n-d.pdf
NTMFS4C13NT3G
Виробник: onsemi
Description: MOSFET N-CH 30V 7.2A/38A 5DFN
Packaging: Tape & Reel (TR)
товару немає в наявності
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NTMFS4C800NT1G
Виробник: onsemi
Description: MOSFET N-CH 30V 69A SO8FL
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NTMFS5C612NLWFT1G
NTMFS5C612NLWFT1G
Виробник: onsemi
Description: MOSFET N-CH 60V 235A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
товару немає в наявності
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NTR5103NT1G ntr5103n-d.pdf
NTR5103NT1G
Виробник: onsemi
Description: MOSFET N-CH 60V 260MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.81 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.06 грн
6000+1.87 грн
9000+1.76 грн
15000+1.60 грн
21000+1.55 грн
30000+1.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NTTFS4C05NTAG nttfs4c05n-d.pdf
NTTFS4C05NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 12A/75A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 820mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1988 pF @ 15 V
товару немає в наявності
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NTTFS4C10NTAG nttfs4c10n-d.pdf
NTTFS4C10NTAG
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
товару немає в наявності
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NTTFS4C10NTWG nttfs4c10n-d.pdf
NTTFS4C10NTWG
Виробник: onsemi
Description: MOSFET N-CH 30V 8.2A/44A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V
Power Dissipation (Max): 790mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 993 pF @ 15 V
товару немає в наявності
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NVMFS5113PLT1G nvmfs5113pl-d.pdf
NVMFS5113PLT1G
Виробник: onsemi
Description: MOSFET P-CH 60V 10A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 17A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+80.70 грн
3000+76.20 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
NVMFS5C404NT3G nvmfs5c404n-d.pdf
NVMFS5C404NT3G
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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NVMFS5C404NWFT1G nvmfs5c404n-d.pdf
NVMFS5C404NWFT1G
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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NVMFS5C404NWFT3G nvmfs5c404n-d.pdf
NVMFS5C404NWFT3G
Виробник: onsemi
Description: MOSFET N-CH 40V 53A/378A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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NVMFS5C423NLT3G nvmfs5c423nl-d.pdf
NVMFS5C423NLT3G
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5C423NLWFT1G nvmfs5c423nl-d.pdf
NVMFS5C423NLWFT1G
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5C423NLWFT3G nvmfs5c423nl-d.pdf
NVMFS5C423NLWFT3G
Виробник: onsemi
Description: MOSFET N-CH 40V 31A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 20 V
Qualification: AEC-Q101
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NVMFS5C670NLWFT1G nvmfs5c670nl-d.pdf
NVMFS5C670NLWFT1G
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
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NVMFS5C670NLWFT3G nvmfs5c670nl-d.pdf
NVMFS5C670NLWFT3G
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
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