| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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CNY174M | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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CNY17F4TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 238 шт: термін постачання 14-30 дні (днів) |
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CNY171M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 104 шт: термін постачання 14-30 дні (днів) |
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CNY174SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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CNY17F1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 350 шт: термін постачання 14-30 дні (днів) |
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CNY17F2SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 114 шт: термін постачання 14-30 дні (днів) |
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CNY173SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 867 шт: термін постачання 14-30 дні (днів) |
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CNY174SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 501 шт: термін постачання 14-30 дні (днів) |
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CNY172SVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 382 шт: термін постачання 14-30 дні (днів) |
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CNY171SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 198 шт: термін постачання 14-30 дні (днів) |
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CNY17F4SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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CNY17F2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Manufacturer series: CNY17 Max. off-state voltage: 6V |
на замовлення 859 шт: термін постачання 14-30 дні (днів) |
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| FAN3121TMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8 Mounting: SMD Supply voltage: 4.5...18V DC Output current: -11.4...10.6A Type of integrated circuit: driver Kind of output: inverting Operating temperature: -55...150°C Technology: MillerDrive™ Pulse fall time: 19ns Kind of package: reel; tape Case: WDFN8 Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 1 Impulse rise time: 23ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FAN3121TMPX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8 Mounting: SMD Supply voltage: 4.5...18V DC Output current: -11.4...10.6A Type of integrated circuit: driver Kind of output: non-inverting Operating temperature: -55...150°C Technology: MillerDrive™ Pulse fall time: 19ns Kind of package: reel; tape Case: WDFN8 Kind of integrated circuit: low-side; MOSFET gate driver Number of channels: 1 Impulse rise time: 23ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HC157ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; HC; HC Type of integrated circuit: digital Kind of integrated circuit: data selector; multiplexer Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: TSSOP16 Family: HC Supply voltage: 2...6V DC Manufacturer series: HC Operating temperature: -40...85°C Technology: TTL Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HC157ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: data selector; multiplexer Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: SO16 Family: HC Supply voltage: 2...6V DC Manufacturer series: HC Operating temperature: -40...85°C Technology: TTL Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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MC74HC157ADTR2G-Q | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: data selector; multiplexer Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: TSSOP16 Family: HC Number of outputs: 4 Delay time: 160ns Supply voltage: 2...6V Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NVMFWS004N10MCT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 138A; Idm: 900A; 82W; DFN5 Kind of package: reel; tape Case: DFN5 On-state resistance: 3.9mΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 82W Gate charge: 48nC Polarisation: unipolar Drain current: 138A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS3D6N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 132A; Idm: 888A; 69W; DFNW5 Kind of package: reel; tape Case: DFNW5 On-state resistance: 3.6mΩ Mounting: SMD Pulsed drain current: 888A Power dissipation: 69W Gate charge: 60nC Polarisation: unipolar Drain current: 132A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS002N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5 Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN5 On-state resistance: 2.8mΩ Mounting: SMD Pulsed drain current: 900A Power dissipation: 97W Gate charge: 97nC Polarisation: unipolar Drain current: 177A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS005N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5 Kind of package: reel; tape Case: DFN5 On-state resistance: 5.1mΩ Mounting: SMD Pulsed drain current: 695A Power dissipation: 65W Gate charge: 55nC Polarisation: unipolar Drain current: 108A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS021N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 159A; 24W; DFNW5 Gate-source voltage: ±20V Kind of package: reel; tape Case: DFNW5 On-state resistance: 23mΩ Mounting: SMD Pulsed drain current: 159A Power dissipation: 24W Gate charge: 13nC Polarisation: unipolar Drain current: 31A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBT918LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 15V; 50mA; 225/300mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 50mA Power dissipation: 0.225/0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 600MHz Kind of transistor: RF Current gain: 20 |
на замовлення 1380 шт: термін постачання 14-30 дні (днів) |
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MMBT5179 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 50mA Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 2GHz |
на замовлення 5923 шт: термін постачання 14-30 дні (днів) |
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DTA143ZET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 |
на замовлення 2910 шт: термін постачання 14-30 дні (днів) |
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DTA143ZM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DTA143EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 3000pcs. Current gain: 15...27 |
на замовлення 7982 шт: термін постачання 14-30 дні (днів) |
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DTA143EM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Manufacturer standard package: 8000pcs. Current gain: 15...27 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DTA143TET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Manufacturer standard package: 3000pcs. Current gain: 160...250 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DTA143TM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Manufacturer standard package: 8000pcs. |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||
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MUR620CTG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns Mounting: THT Reverse recovery time: 35ns Max. forward impulse current: 75A Max. off-state voltage: 200V Load current: 6A Kind of package: tube Semiconductor structure: common cathode; double Case: TO220AB Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCB070N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Power dissipation: 312W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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| NTMFS010N10GTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 83A Pulsed drain current: 1247A Power dissipation: 75W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 58.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| NTTFS010N10MCLTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 250A Power dissipation: 52W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 10.6mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||||
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NSS60600MZ4T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: PNP Current gain: 120...360 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz Collector current: 6A |
на замовлення 797 шт: термін постачання 14-30 дні (днів) |
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| NSS60601MZ4T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: NPN Current gain: 120...360 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz Collector current: 6A |
на замовлення 985 шт: термін постачання 14-30 дні (днів) |
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MUR1100ERLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 35A Case: CASE59 Kind of package: reel; tape Reverse recovery time: 75ns |
на замовлення 52 шт: термін постачання 14-30 дні (днів) |
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MUR1100EG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 35A Case: DO41 Kind of package: bulk Reverse recovery time: 100ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MUN2211T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
| SMUN2211T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FGH50T65SQD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 134W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Gate charge: 99nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 200A |
на замовлення 298 шт: термін постачання 14-30 дні (днів) |
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NTMD6N02R2G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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MMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Version: ESD Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 50nA Case: SOT23 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
на замовлення 873 шт: термін постачання 14-30 дні (днів) |
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| MMBZ20VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
SZMMBZ20VALT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SOT23 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SZMMBZ20VAWT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2 Max. forward impulse current: 1.4A Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 17V Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC70 Type of diode: TVS array Number of channels: 2 Tolerance: ±5% Mounting: SMD Breakdown voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3051SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Manufacturer series: MOC305X Kind of package: reel; tape Conform to the norm: VDE Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3051SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Manufacturer series: MOC305X Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOC3051TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Manufacturer series: MOC305X Kind of package: tube Conform to the norm: VDE Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MOC3051VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Manufacturer series: MOC305X Kind of package: tube Conform to the norm: VDE Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
FQB33N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±25V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 52mΩ Power dissipation: 127W Gate charge: 51nC Technology: QFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQB33N10LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 23A Case: D2PAK Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 55mΩ Pulsed drain current: 132A Power dissipation: 127W Gate charge: 40nC Technology: QFET® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| FAN3852UC16X | ONSEMI |
Category: RTV - audio integrated circuits Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC Supply voltage: 1.64...3.63V DC Kind of package: reel; tape Case: WLCSP6 Interface: PDM Number of channels: 1 Mounting: SMD Type of integrated circuit: audio amplifier Operating temperature: -40...85°C Integrated circuit features: microphone preamplifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
ISL9V3040D3ST | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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ISL9V3040D3ST-F085C | ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
MC74ACT161DR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
 |
NCP45524IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: high Control voltage: 0.5...13.5V DC Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 31.7mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
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NCP45524IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8 Mounting: SMD Supply voltage: 3...5.5V DC Active logical level: low Control voltage: 0.5...13.5V DC Output current: 6A Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape Case: DFN8 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 31.7mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
MC33275ST-3.3T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SOT223 Operating temperature: -40...125°C Kind of package: reel; tape Output current: 0.8A Voltage drop: 1.1V Output voltage: 3.3V Tolerance: ±1% Kind of voltage regulator: fixed; LDO; linear Input voltage: 0...20V Manufacturer series: MC33275 |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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MC33275ST-5.0T3G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SOT223 Kind of package: reel; tape Output current: 0.3A Output voltage: 5V Kind of voltage regulator: fixed; LDO; linear |
на замовлення 3568 шт: термін постачання 14-30 дні (днів) |
|
| CNY174M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.19 грн |
| 15+ | 29.07 грн |
| 25+ | 22.42 грн |
| CNY17F4TVM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 238 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.57 грн |
| 26+ | 16.44 грн |
| 31+ | 13.54 грн |
| 79+ | 12.04 грн |
| 100+ | 11.88 грн |
| 216+ | 11.38 грн |
| CNY171M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 104 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.09 грн |
| 18+ | 24.25 грн |
| 26+ | 16.11 грн |
| 69+ | 13.79 грн |
| 100+ | 13.29 грн |
| CNY174SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 447.22 грн |
| CNY17F1SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 350 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.57 грн |
| 25+ | 17.11 грн |
| 30+ | 14.29 грн |
| 90+ | 10.55 грн |
| 248+ | 9.97 грн |
| CNY17F2SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 114 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.14 грн |
| 17+ | 25.08 грн |
| 50+ | 20.43 грн |
| 67+ | 14.29 грн |
| CNY173SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 867 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.14 грн |
| 17+ | 24.83 грн |
| 25+ | 22.84 грн |
| 45+ | 21.35 грн |
| 100+ | 20.02 грн |
| 500+ | 19.44 грн |
| CNY174SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 501 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.83 грн |
| 14+ | 31.06 грн |
| 50+ | 26.08 грн |
| 61+ | 15.78 грн |
| 100+ | 15.70 грн |
| 166+ | 14.87 грн |
| CNY172SVM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 382 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.04 грн |
| 40+ | 10.63 грн |
| 47+ | 8.89 грн |
| 100+ | 7.31 грн |
| 194+ | 4.90 грн |
| CNY171SR2VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 198 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.57 грн |
| 29+ | 14.45 грн |
| 35+ | 11.96 грн |
| 90+ | 10.63 грн |
| 100+ | 10.46 грн |
| CNY17F4SR2VM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.81 грн |
| CNY17F2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Manufacturer series: CNY17
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Manufacturer series: CNY17
Max. off-state voltage: 6V
на замовлення 859 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.04 грн |
| 16+ | 26.25 грн |
| 50+ | 22.18 грн |
| 57+ | 16.61 грн |
| 157+ | 15.70 грн |
| FAN3121TMPX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -11.4...10.6A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -55...150°C
Technology: MillerDrive™
Pulse fall time: 19ns
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 1
Impulse rise time: 23ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -11.4...10.6A
Type of integrated circuit: driver
Kind of output: inverting
Operating temperature: -55...150°C
Technology: MillerDrive™
Pulse fall time: 19ns
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 1
Impulse rise time: 23ns
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| FAN3121TMPX |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -11.4...10.6A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -55...150°C
Technology: MillerDrive™
Pulse fall time: 19ns
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 1
Impulse rise time: 23ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; WDFN8
Mounting: SMD
Supply voltage: 4.5...18V DC
Output current: -11.4...10.6A
Type of integrated circuit: driver
Kind of output: non-inverting
Operating temperature: -55...150°C
Technology: MillerDrive™
Pulse fall time: 19ns
Kind of package: reel; tape
Case: WDFN8
Kind of integrated circuit: low-side; MOSFET gate driver
Number of channels: 1
Impulse rise time: 23ns
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| MC74HC157ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Manufacturer series: HC
Operating temperature: -40...85°C
Technology: TTL
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: HC
Supply voltage: 2...6V DC
Manufacturer series: HC
Operating temperature: -40...85°C
Technology: TTL
Kind of package: reel; tape
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| MC74HC157ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO16
Family: HC
Supply voltage: 2...6V DC
Manufacturer series: HC
Operating temperature: -40...85°C
Technology: TTL
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; TTL; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SO16
Family: HC
Supply voltage: 2...6V DC
Manufacturer series: HC
Operating temperature: -40...85°C
Technology: TTL
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
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| MC74HC157ADTR2G-Q |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: HC
Number of outputs: 4
Delay time: 160ns
Supply voltage: 2...6V
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer,data selector; Ch: 4; IN: 2; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: data selector; multiplexer
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: HC
Number of outputs: 4
Delay time: 160ns
Supply voltage: 2...6V
Operating temperature: -55...125°C
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| NVMFWS004N10MCT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 138A; Idm: 900A; 82W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.9mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 82W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 138A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 138A; Idm: 900A; 82W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 3.9mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 82W
Gate charge: 48nC
Polarisation: unipolar
Drain current: 138A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
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| NVMFWS3D6N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 132A; Idm: 888A; 69W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 3.6mΩ
Mounting: SMD
Pulsed drain current: 888A
Power dissipation: 69W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 132A; Idm: 888A; 69W; DFNW5
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 3.6mΩ
Mounting: SMD
Pulsed drain current: 888A
Power dissipation: 69W
Gate charge: 60nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
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| NVMFWS002N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 2.8mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 97W
Gate charge: 97nC
Polarisation: unipolar
Drain current: 177A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 177A; Idm: 900A; 97W; DFN5
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN5
On-state resistance: 2.8mΩ
Mounting: SMD
Pulsed drain current: 900A
Power dissipation: 97W
Gate charge: 97nC
Polarisation: unipolar
Drain current: 177A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
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| NVMFWS005N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 5.1mΩ
Mounting: SMD
Pulsed drain current: 695A
Power dissipation: 65W
Gate charge: 55nC
Polarisation: unipolar
Drain current: 108A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5
Kind of package: reel; tape
Case: DFN5
On-state resistance: 5.1mΩ
Mounting: SMD
Pulsed drain current: 695A
Power dissipation: 65W
Gate charge: 55nC
Polarisation: unipolar
Drain current: 108A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
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| NVMFWS021N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 159A; 24W; DFNW5
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 23mΩ
Mounting: SMD
Pulsed drain current: 159A
Power dissipation: 24W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 159A; 24W; DFNW5
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFNW5
On-state resistance: 23mΩ
Mounting: SMD
Pulsed drain current: 159A
Power dissipation: 24W
Gate charge: 13nC
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
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| MMBT918LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 50mA; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 50mA
Power dissipation: 0.225/0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
Kind of transistor: RF
Current gain: 20
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 50mA; 225/300mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 50mA
Power dissipation: 0.225/0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 600MHz
Kind of transistor: RF
Current gain: 20
на замовлення 1380 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 56+ | 8.05 грн |
| 68+ | 6.15 грн |
| 77+ | 5.40 грн |
| 92+ | 4.55 грн |
| 103+ | 4.07 грн |
| 113+ | 3.69 грн |
| 250+ | 3.43 грн |
| 500+ | 3.31 грн |
| MMBT5179 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 0.05A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 50mA
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 2GHz
на замовлення 5923 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.63 грн |
| 87+ | 4.82 грн |
| 100+ | 4.15 грн |
| 134+ | 3.11 грн |
| 145+ | 2.87 грн |
| 250+ | 2.69 грн |
| DTA143ZET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
на замовлення 2910 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.52 грн |
| 47+ | 8.97 грн |
| 55+ | 7.64 грн |
| 100+ | 4.15 грн |
| 500+ | 2.92 грн |
| 596+ | 1.59 грн |
| 1638+ | 1.51 грн |
| DTA143ZM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Current gain: 80...140
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| DTA143EET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 15...27
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 15...27
на замовлення 7982 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.68 грн |
| 38+ | 10.96 грн |
| 100+ | 6.21 грн |
| 500+ | 3.78 грн |
| 1000+ | 2.32 грн |
| 3000+ | 2.03 грн |
| 6000+ | 1.83 грн |
| DTA143EM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Current gain: 15...27
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Current gain: 15...27
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| DTA143TET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 160...250
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 3000pcs.
Current gain: 160...250
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| DTA143TM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; SOT723; 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Manufacturer standard package: 8000pcs.
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Мінімальне замовлення: 8000 шт
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| MUR620CTG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns
Mounting: THT
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 6A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 6A; Ifsm: 75A; TO220AB; tube; 35ns
Mounting: THT
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. off-state voltage: 200V
Load current: 6A
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: rectifying
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| FCB070N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Power dissipation: 312W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 559.03 грн |
| 3+ | 322.26 грн |
| 9+ | 304.81 грн |
| NTMFS010N10GTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; Idm: 1247A; 75W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 83A
Pulsed drain current: 1247A
Power dissipation: 75W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 58.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| NTTFS010N10MCLTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 250A; 52W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 52W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 10.6mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 1500 шт
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| NSS60600MZ4T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
на замовлення 797 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.51 грн |
| 11+ | 38.70 грн |
| 20+ | 33.97 грн |
| 50+ | 28.49 грн |
| 57+ | 16.69 грн |
| 157+ | 15.78 грн |
| NSS60601MZ4T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
на замовлення 985 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.77 грн |
| 12+ | 35.80 грн |
| 45+ | 21.35 грн |
| 123+ | 20.18 грн |
| MUR1100ERLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 35A
Case: CASE59
Kind of package: reel; tape
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; CASE59; reel,tape; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 35A
Case: CASE59
Kind of package: reel; tape
Reverse recovery time: 75ns
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 69.77 грн |
| 9+ | 46.51 грн |
| 11+ | 40.20 грн |
| 50+ | 29.07 грн |
| MUR1100EG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; bulk; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 35A
Case: DO41
Kind of package: bulk
Reverse recovery time: 100ns
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| MUN2211T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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Мінімальне замовлення: 10000 шт
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| SMUN2211T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
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| FGH50T65SQD-F155 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 134W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
на замовлення 298 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 365.83 грн |
| 3+ | 303.15 грн |
| 5+ | 209.30 грн |
| 13+ | 197.67 грн |
| 60+ | 190.20 грн |
| NTMD6N02R2G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2500 шт
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| MMBZ20VALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; ESD; SOT23
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Version: ESD
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
на замовлення 873 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.16 грн |
| 74+ | 5.65 грн |
| 85+ | 4.90 грн |
| 136+ | 3.06 грн |
| 500+ | 2.43 грн |
| MMBZ20VAWT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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| SZMMBZ20VALT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SOT23; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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| SZMMBZ20VAWT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
Category: Protection diodes - arrays
Description: Diode: TVS array; 20V; 1.4A; 40W; double,common anode; SC70; Ch: 2
Max. forward impulse current: 1.4A
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 17V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC70
Type of diode: TVS array
Number of channels: 2
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 20V
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| MOC3051SR2VM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: reel; tape
Conform to the norm: VDE
Number of channels: 1
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| MOC3051SR2M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: reel; tape
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Manufacturer series: MOC305X
Kind of package: reel; tape
Number of channels: 1
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| MOC3051TVM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Number of channels: 1
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| MOC3051VM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Manufacturer series: MOC305X
Kind of package: tube
Conform to the norm: VDE
Number of channels: 1
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| FQB33N10TM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±25V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 52mΩ
Power dissipation: 127W
Gate charge: 51nC
Technology: QFET®
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| FQB33N10LTM |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 23A; Idm: 132A; 127W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 23A
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 55mΩ
Pulsed drain current: 132A
Power dissipation: 127W
Gate charge: 40nC
Technology: QFET®
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| FAN3852UC16X |
|
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; PDM; microphone preamplifier; 1.64÷3.63VDC
Supply voltage: 1.64...3.63V DC
Kind of package: reel; tape
Case: WLCSP6
Interface: PDM
Number of channels: 1
Mounting: SMD
Type of integrated circuit: audio amplifier
Operating temperature: -40...85°C
Integrated circuit features: microphone preamplifier
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| ISL9V3040D3ST |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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Мінімальне замовлення: 2500 шт
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| ISL9V3040D3ST-F085C |
|
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| MC74ACT161DR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| NCP45524IMNTWG-H |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: high
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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В кошику
од. на суму грн.
| NCP45524IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; DFN8
Mounting: SMD
Supply voltage: 3...5.5V DC
Active logical level: low
Control voltage: 0.5...13.5V DC
Output current: 6A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
Case: DFN8
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 31.7mΩ
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од. на суму грн.
| MC33275ST-3.3T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 0.8A
Voltage drop: 1.1V
Output voltage: 3.3V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0...20V
Manufacturer series: MC33275
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Operating temperature: -40...125°C
Kind of package: reel; tape
Output current: 0.8A
Voltage drop: 1.1V
Output voltage: 3.3V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 0...20V
Manufacturer series: MC33275
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 447.22 грн |
| MC33275ST-5.0T3G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Output current: 0.3A
Output voltage: 5V
Kind of voltage regulator: fixed; LDO; linear
на замовлення 3568 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.94 грн |
| 22+ | 19.35 грн |
| 25+ | 17.94 грн |
| 100+ | 15.61 грн |
| 250+ | 14.20 грн |
| 500+ | 13.70 грн |
| 1000+ | 13.12 грн |