| Фото | Назва | Виробник | Інформація |
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NTMFS5C682NLT1G | onsemi |
 Description: MOSFET N-CH 60V 25A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 16µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V |
на замовлення 3119 шт: термін постачання 21-31 дні (днів) |
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NSR05T30XV2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 500MA SOD523 Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Technology: Schottky Capacitance @ Vr, F: 85pF @ 1V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 500 mA Current - Reverse Leakage @ Vr: 170 µA @ 30 V |
на замовлення 221 шт: термін постачання 21-31 дні (днів) |
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NSP4201MR6T1G | onsemi |
Description: TVS DIODE 5VWM 12VC 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 3pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 6-TSOP Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3616 шт: термін постачання 21-31 дні (днів) |
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NSPM0101MUT5G | onsemi |
Description: TVS DIODE 10VWM 20VC 2UDFN Packaging: Cut Tape (CT) Package / Case: 2-UDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 400pF @ 1MHz (Max) Voltage - Reverse Standoff (Typ): 10V (Max) Supplier Device Package: 2-UDFN (1.6x1) Unidirectional Channels: 1 Voltage - Breakdown (Min): 12V Voltage - Clamping (Max) @ Ipp: 20V Power Line Protection: No Part Status: Obsolete |
товар відсутній |
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NTTFS4C02NTAG | onsemi |
Description: MOSFET N-CH 30V 170A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V |
на замовлення 1046 шт: термін постачання 21-31 дні (днів) |
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NCP114ASN150T1G | onsemi |
Description: IC REG LINEAR 1.5V 300MA 5TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 1.5V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.46V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 5053 шт: термін постачання 21-31 дні (днів) |
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NCP716BSN330T1G | onsemi |
Description: IC REG LINEAR 3.3V 150MA 5TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Voltage - Input (Max): 24V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 3.3V Part Status: Active Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
на замовлення 62365 шт: термін постачання 21-31 дні (днів) |
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NCS20071SN2T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 5TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 465µA Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 2 nA Voltage - Input Offset: 1.3 mV Supplier Device Package: 5-TSOP Number of Circuits: 1 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V |
на замовлення 19871 шт: термін постачання 21-31 дні (днів) |
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NCV20061SQ3T2G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT SC88A Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 140µA Slew Rate: 1.2V/µs Gain Bandwidth Product: 3 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: SC-88A (SC-70-5/SOT-353) Grade: Automotive Number of Circuits: 1 Current - Output / Channel: 19 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 47765 шт: термін постачання 21-31 дні (днів) |
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NCV20071SN2T1G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT 5TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 465µA Slew Rate: 2.4V/µs Gain Bandwidth Product: 3.2 MHz Current - Input Bias: 2 nA Voltage - Input Offset: 1.3 mV Supplier Device Package: 5-TSOP Number of Circuits: 1 Current - Output / Channel: 65 mA Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 36 V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3867 шт: термін постачання 21-31 дні (днів) |
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NCV20081SQ3T2G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT SC88A Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 48µA Slew Rate: 0.4V/µs Gain Bandwidth Product: 1.2 MHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: SC-88A (SC-70-5/SOT-353) Grade: Automotive Number of Circuits: 1 Current - Output / Channel: 15 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 8940 шт: термін постачання 21-31 дні (днів) |
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NCV20091SQ3T2G | onsemi |
Description: IC OPAMP GP 1 CIRCUIT SC88A Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 23µA Slew Rate: 0.15V/µs Gain Bandwidth Product: 350 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 500 µV Supplier Device Package: SC-88A (SC-70-5/SOT-353) Grade: Automotive Number of Circuits: 1 Current - Output / Channel: 8.5 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 2785 шт: термін постачання 21-31 дні (днів) |
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FAN6248HAMX | onsemi |
Description: LLC SR CONTROLLER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 4V ~ 4.7V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0V ~ 27V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Current - Supply: 8.5 mA DigiKey Programmable: Not Verified |
товар відсутній |
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FAN6248HBMX | onsemi |
Description: LLC SR CONTROLLER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Voltage - Input: 4V ~ 4.7V Operating Temperature: -40°C ~ 125°C Voltage - Supply: 0V ~ 27V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 8-SOIC Current - Supply: 8.5 mA DigiKey Programmable: Not Verified |
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| FAN6293PDMX | onsemi |
Description: W2B ADAPTIVE TRAVEL ADAPTER Packaging: Tape & Reel (TR) Part Status: Obsolete DigiKey Programmable: Not Verified |
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FCH099N65S3_F155 | onsemi |
Description: MOSFET N-CH 650V 30A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V |
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FCP099N65S3 | onsemi |
Description: MOSFET N-CH 650V 30A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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FCP190N65S3 | onsemi |
Description: MOSFET N-CH 650V 17A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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FCPF099N65S3 | onsemi |
Description: MOSFET N-CH 650V 30A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3mA Supplier Device Package: TO-220F Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 400 V |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
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FCPF125N65S3 | onsemi |
Description: MOSFET N-CH 650V 24A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2.4mA Supplier Device Package: TO-220F Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V |
на замовлення 534 шт: термін постачання 21-31 дні (днів) |
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FCPF190N65S3L1 | onsemi |
Description: MOSFET N-CH 650V 14A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.4mA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V |
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FCPF250N65S3L1 | onsemi |
Description: MOSFET N-CH 650V 12A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V |
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FDB9406L-F085 | onsemi |
Description: MOSFET N-CH 40V 110A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 176W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 20 V Qualification: AEC-Q101 |
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FDD86367 | onsemi |
Description: MOSFET N-CH 80V 100A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V Power Dissipation (Max): 227W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 32500 шт: термін постачання 21-31 дні (днів) |
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FDD86369 | onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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FDMF3170 | onsemi |
Description: IC HALF BRIDGE DRIVER 55A 39QFN Packaging: Tape & Reel (TR) Package / Case: 39-PowerVFQFN Mounting Type: Surface Mount Interface: Logic, PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 4.5V ~ 5.5V Applications: General Purpose Current - Output / Channel: 55A Current - Peak Output: 70A Technology: Power MOSFET Voltage - Load: 4.5V ~ 16V Supplier Device Package: 39-PQFN (5x6) Fault Protection: Current Limiting, Over Temperature, UVLO Load Type: Inductive |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMF8811 | onsemi |
Description: IC HALF BRIDGE DRIVER 20A 36QFN Packaging: Tape & Reel (TR) Package / Case: 36-PowerWFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 8V ~ 14V Applications: DC-DC Converters Current - Output / Channel: 20A Current - Peak Output: 4A Technology: Power MOSFET Supplier Device Package: 36-PQFN (7.5x6) Load Type: Inductive Part Status: Not For New Designs |
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FFSH20120A | onsemi |
Description: DIODE SCHOTTKY 1.2KV 30A TO247-2 |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
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FFSP05120A | onsemi |
Description: DIODE SIL CARBIDE 1.2KV TO220-2L Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Supplier Device Package: TO-220-2L Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 2481 шт: термін постачання 21-31 дні (днів) |
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FGH75T65SQDTL4 | onsemi |
Description: IGBT TRENCH FS 650V 150A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-4 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/276ns Switching Energy: 307µJ (on), 266µJ (off) Test Condition: 400V, 18.8A, 15Ohm, 15V Gate Charge: 128 nC Part Status: Obsolete Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A |
на замовлення 760 шт: термін постачання 21-31 дні (днів) |
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FL7740MX | onsemi |
Description: IC OFFLINE SWITCH FWD 10SOIC Packaging: Tape & Reel (TR) Package / Case: 10-SOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Frequency - Switching: 70kHz Internal Switch(s): No Output Isolation: Isolated Topology: Forward Converter Voltage - Supply (Vcc/Vdd): 17V ~ 19V Supplier Device Package: 10-SOIC Fault Protection: Over Load, Over Voltage |
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FOD8342TR2V | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: IEC/EN/DIN, UR Supplier Device Package: 6-SOP Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
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FOD8343 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 6SOP Packaging: Tube Package / Case: 6-SOIC (0.268", 6.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 4A Technology: Optical Coupling Current - Output High, Low: 3A, 3A Voltage - Isolation: 5000Vrms Approval Agency: UR Supplier Device Package: 6-SOIC Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 30V |
на замовлення 1601 шт: термін постачання 21-31 дні (днів) |
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FSB50450B | onsemi |
Description: 500V, 4A, 3PHASE, FRFET SMART PO Packaging: Tube Package / Case: 23-PowerDIP Module (0.551", 14.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Current: 2.2 A Voltage: 500 V |
товар відсутній |
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FSB50550B | onsemi |
Description: 500V, 5A, 3PHASE, FRFET SMART PO Packaging: Tube Package / Case: 23-PowerDIP Module (0.551", 14.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 1500Vrms Part Status: Obsolete Current: 3 A Voltage: 500 V |
товар відсутній |
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FSBB15CH120DF | onsemi |
Description: SPM3V 1200V V2 15A Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Current: 15 A Voltage: 1.2 kV |
товар відсутній |
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AP0102AT2L00XPGAH3-GEVB | onsemi |
Description: BOARD EVAL 1 MP CO-PROCESSOR HB Packaging: Bulk Function: Video Processing Type: Video Utilized IC / Part: AP0102AT Supplied Contents: Board(s) Part Status: Active |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| AP1302CSSL00SMGA0-DR1 | onsemi |
Description: IMAGE SENSOR 13 MP CO-PROCESSOR Packaging: Tray Function: * |
товар відсутній |
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| AR0130CSSC00SPCAH-S115-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0130CS Supplied Contents: Board(s) |
товар відсутній |
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| AR0130CSSM00SPCAH-S115-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0130CS Supplied Contents: Board(s) |
товар відсутній |
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AR0132AT6C00XPEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6C00XPEAH3-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6C00XPEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6C00XPEAH-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6G00XPEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6G00XPEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6M00XPEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6M00XPEAH-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6R00XPEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6R00XPEAH3-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6R00XPEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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| AR0132AT6R00XPEAH-S215-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0132AT Supplied Contents: Board(s) |
товар відсутній |
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AR0134CSSC00SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3 GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
товар відсутній |
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| AR0134CSSC00SUEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
товар відсутній |
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| AR0134CSSM00SPCAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
товар відсутній |
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| AR0134CSSM00SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
товар відсутній |
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| AR0134CSSM00SUEAH-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
товар відсутній |
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| AR0134CSSM25SUEAH3-GEVB | onsemi |
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0134CS Supplied Contents: Board(s) Part Status: Active |
товар відсутній |
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AR0231AT7C00XUEAH3-GEVB | onsemi |
Description: BOARD EVAL 2MP 1/3 CIS 0 DEG CRA |
товар відсутній |
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AR0237CSSC12SHRAH3-GEVB | onsemi |
Description: BOARD EVAL 2MP 1/3 CIS 12 DEG MP Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0237CS Supplied Contents: Board(s) |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| NTMFS5C682NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Description: MOSFET N-CH 60V 25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 16µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
на замовлення 3119 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 193.12 грн |
| 10+ | 154.42 грн |
| 100+ | 122.96 грн |
| 500+ | 97.64 грн |
| NSR05T30XV2T5G |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 500 mA
Current - Reverse Leakage @ Vr: 170 µA @ 30 V
Description: DIODE SCHOTTKY 30V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Technology: Schottky
Capacitance @ Vr, F: 85pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 500 mA
Current - Reverse Leakage @ Vr: 170 µA @ 30 V
на замовлення 221 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.76 грн |
| 28+ | 10.99 грн |
| 100+ | 6.84 грн |
| NSP4201MR6T1G |
|
Виробник: onsemi
Description: TVS DIODE 5VWM 12VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 12VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3616 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 35.18 грн |
| 11+ | 29.06 грн |
| 100+ | 20.23 грн |
| 500+ | 14.82 грн |
| 1000+ | 12.05 грн |
| NSPM0101MUT5G |
|
Виробник: onsemi
Description: TVS DIODE 10VWM 20VC 2UDFN
Packaging: Cut Tape (CT)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 10VWM 20VC 2UDFN
Packaging: Cut Tape (CT)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 400pF @ 1MHz (Max)
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Part Status: Obsolete
товар відсутній
| NTTFS4C02NTAG |
|
Виробник: onsemi
Description: MOSFET N-CH 30V 170A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V
Description: MOSFET N-CH 30V 170A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.25mOhm @ 20A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 15 V
на замовлення 1046 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.19 грн |
| 10+ | 61.74 грн |
| 100+ | 48.01 грн |
| 500+ | 38.19 грн |
| NCP114ASN150T1G |
|
Виробник: onsemi
Description: IC REG LINEAR 1.5V 300MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.46V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.5V 300MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.46V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 5053 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.71 грн |
| 20+ | 15.81 грн |
| 25+ | 12.8 грн |
| 100+ | 8.91 грн |
| 250+ | 7.44 грн |
| 500+ | 6.55 грн |
| 1000+ | 5.72 грн |
| NCP716BSN330T1G |
|
Виробник: onsemi
Description: IC REG LINEAR 3.3V 150MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 3.3V 150MA 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 62365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.28 грн |
| 10+ | 100.82 грн |
| 25+ | 95.68 грн |
| 100+ | 68.95 грн |
| 250+ | 60.93 грн |
| 500+ | 57.73 грн |
| 1000+ | 44.16 грн |
| NCS20071SN2T1G |
|
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 465µA
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 2 nA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 465µA
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 2 nA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
на замовлення 19871 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.04 грн |
| 10+ | 42.39 грн |
| 25+ | 39.84 грн |
| 100+ | 28.35 грн |
| 250+ | 24.13 грн |
| 500+ | 22.92 грн |
| 1000+ | 17.21 грн |
| NCV20061SQ3T2G |
|
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 140µA
Slew Rate: 1.2V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 19 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 1 CIRCUIT SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 140µA
Slew Rate: 1.2V/µs
Gain Bandwidth Product: 3 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 19 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 47765 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 66.46 грн |
| 10+ | 57 грн |
| 25+ | 54.09 грн |
| 100+ | 38.97 грн |
| 250+ | 34.44 грн |
| 500+ | 32.62 грн |
| 1000+ | 24.96 грн |
| NCV20071SN2T1G |
|
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 465µA
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 2 nA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
Description: IC OPAMP GP 1 CIRCUIT 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 465µA
Slew Rate: 2.4V/µs
Gain Bandwidth Product: 3.2 MHz
Current - Input Bias: 2 nA
Voltage - Input Offset: 1.3 mV
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 36 V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3867 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.33 грн |
| 10+ | 53.53 грн |
| 25+ | 50.26 грн |
| 100+ | 35.77 грн |
| 250+ | 30.44 грн |
| 500+ | 28.92 грн |
| 1000+ | 21.71 грн |
| NCV20081SQ3T2G |
|
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 48µA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 15 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 1 CIRCUIT SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 48µA
Slew Rate: 0.4V/µs
Gain Bandwidth Product: 1.2 MHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 15 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 8940 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.6 грн |
| 10+ | 44.05 грн |
| 25+ | 41.32 грн |
| 100+ | 29.39 грн |
| 250+ | 25.02 грн |
| 500+ | 23.76 грн |
| 1000+ | 17.84 грн |
| NCV20091SQ3T2G |
|
Виробник: onsemi
Description: IC OPAMP GP 1 CIRCUIT SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 1 CIRCUIT SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 23µA
Slew Rate: 0.15V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 500 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 8.5 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 2785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.6 грн |
| 10+ | 44.05 грн |
| 25+ | 41.32 грн |
| 100+ | 29.39 грн |
| 250+ | 25.02 грн |
| 500+ | 23.76 грн |
| 1000+ | 17.84 грн |
| FAN6248HAMX |
|
Виробник: onsemi
Description: LLC SR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 4V ~ 4.7V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0V ~ 27V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8.5 mA
DigiKey Programmable: Not Verified
Description: LLC SR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 4V ~ 4.7V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0V ~ 27V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8.5 mA
DigiKey Programmable: Not Verified
товар відсутній
| FAN6248HBMX |
|
Виробник: onsemi
Description: LLC SR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 4V ~ 4.7V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0V ~ 27V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8.5 mA
DigiKey Programmable: Not Verified
Description: LLC SR CONTROLLER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Input: 4V ~ 4.7V
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0V ~ 27V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Current - Supply: 8.5 mA
DigiKey Programmable: Not Verified
товар відсутній
| FAN6293PDMX |
Виробник: onsemi
Description: W2B ADAPTIVE TRAVEL ADAPTER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: W2B ADAPTIVE TRAVEL ADAPTER
Packaging: Tape & Reel (TR)
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
| FCH099N65S3_F155 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Description: MOSFET N-CH 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
товар відсутній
| FCP099N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
Description: MOSFET N-CH 650V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 400 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 325.26 грн |
| 10+ | 210.89 грн |
| 100+ | 177.68 грн |
| FCP190N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
Description: MOSFET N-CH 650V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8.5A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 400 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.83 грн |
| 50+ | 110.38 грн |
| 100+ | 106.91 грн |
| FCPF099N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 400 V
Description: MOSFET N-CH 650V 30A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3mA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 400 V
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 444.89 грн |
| 50+ | 227.85 грн |
| 100+ | 208.47 грн |
| 500+ | 164.55 грн |
| FCPF125N65S3 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
Description: MOSFET N-CH 650V 24A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 400 V
на замовлення 534 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 398.76 грн |
| 50+ | 202.58 грн |
| 100+ | 184.98 грн |
| 500+ | 144.6 грн |
| FCPF190N65S3L1 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 14A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.4mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V
Description: MOSFET N-CH 650V 14A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.4mA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 400 V
товар відсутній
| FCPF250N65S3L1 |
|
Виробник: onsemi
Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Description: MOSFET N-CH 650V 12A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
товар відсутній
| FDB9406L-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 176W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 20 V
Qualification: AEC-Q101
товар відсутній
| FDD86367 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 100A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 80A, 10V
Power Dissipation (Max): 227W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4840 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 32500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 65.58 грн |
| FDD86369 |
|
Виробник: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 52.59 грн |
| 5000+ | 48.74 грн |
| FDMF3170 |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 55A 39QFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 70A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 55A 39QFN
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 5.5V
Applications: General Purpose
Current - Output / Channel: 55A
Current - Peak Output: 70A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 16V
Supplier Device Package: 39-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 109.73 грн |
| FDMF8811 |
|
Виробник: onsemi
Description: IC HALF BRIDGE DRIVER 20A 36QFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 14V
Applications: DC-DC Converters
Current - Output / Channel: 20A
Current - Peak Output: 4A
Technology: Power MOSFET
Supplier Device Package: 36-PQFN (7.5x6)
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRIVER 20A 36QFN
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerWFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 14V
Applications: DC-DC Converters
Current - Output / Channel: 20A
Current - Peak Output: 4A
Technology: Power MOSFET
Supplier Device Package: 36-PQFN (7.5x6)
Load Type: Inductive
Part Status: Not For New Designs
товар відсутній
| FFSH20120A |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 1.2KV 30A TO247-2
Description: DIODE SCHOTTKY 1.2KV 30A TO247-2
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1220.51 грн |
| 10+ | 1080.21 грн |
| 100+ | 912.28 грн |
| FFSP05120A |
|
Виробник: onsemi
Description: DIODE SIL CARBIDE 1.2KV TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-220-2L
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARBIDE 1.2KV TO220-2L
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Supplier Device Package: TO-220-2L
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 2481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 310.4 грн |
| 10+ | 251.25 грн |
| 100+ | 203.25 грн |
| 500+ | 169.55 грн |
| 1000+ | 145.18 грн |
| 2000+ | 136.7 грн |
| FGH75T65SQDTL4 |
|
Виробник: onsemi
Description: IGBT TRENCH FS 650V 150A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/276ns
Switching Energy: 307µJ (on), 266µJ (off)
Test Condition: 400V, 18.8A, 15Ohm, 15V
Gate Charge: 128 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Description: IGBT TRENCH FS 650V 150A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-4
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/276ns
Switching Energy: 307µJ (on), 266µJ (off)
Test Condition: 400V, 18.8A, 15Ohm, 15V
Gate Charge: 128 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
на замовлення 760 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 430.03 грн |
| 30+ | 330.4 грн |
| 120+ | 295.63 грн |
| 510+ | 244.8 грн |
| FL7740MX |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FWD 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Frequency - Switching: 70kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Forward Converter
Voltage - Supply (Vcc/Vdd): 17V ~ 19V
Supplier Device Package: 10-SOIC
Fault Protection: Over Load, Over Voltage
Description: IC OFFLINE SWITCH FWD 10SOIC
Packaging: Tape & Reel (TR)
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Frequency - Switching: 70kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Forward Converter
Voltage - Supply (Vcc/Vdd): 17V ~ 19V
Supplier Device Package: 10-SOIC
Fault Protection: Over Load, Over Voltage
товар відсутній
| FOD8342TR2V |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC/EN/DIN, UR
Supplier Device Package: 6-SOP
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
товар відсутній
| FOD8343 |
|
Виробник: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOIC
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 6SOP
Packaging: Tube
Package / Case: 6-SOIC (0.268", 6.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 4A
Technology: Optical Coupling
Current - Output High, Low: 3A, 3A
Voltage - Isolation: 5000Vrms
Approval Agency: UR
Supplier Device Package: 6-SOIC
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 30V
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 239.25 грн |
| 10+ | 153.44 грн |
| 100+ | 118.03 грн |
| 500+ | 100.13 грн |
| 1000+ | 86.05 грн |
| FSB50450B |
|
Виробник: onsemi
Description: 500V, 4A, 3PHASE, FRFET SMART PO
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 2.2 A
Voltage: 500 V
Description: 500V, 4A, 3PHASE, FRFET SMART PO
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 2.2 A
Voltage: 500 V
товар відсутній
| FSB50550B |
|
Виробник: onsemi
Description: 500V, 5A, 3PHASE, FRFET SMART PO
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3 A
Voltage: 500 V
Description: 500V, 5A, 3PHASE, FRFET SMART PO
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Obsolete
Current: 3 A
Voltage: 500 V
товар відсутній
| FSBB15CH120DF |
|
Виробник: onsemi
Description: SPM3V 1200V V2 15A
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 1.2 kV
Description: SPM3V 1200V V2 15A
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 1.2 kV
товар відсутній
| AP0102AT2L00XPGAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1 MP CO-PROCESSOR HB
Packaging: Bulk
Function: Video Processing
Type: Video
Utilized IC / Part: AP0102AT
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1 MP CO-PROCESSOR HB
Packaging: Bulk
Function: Video Processing
Type: Video
Utilized IC / Part: AP0102AT
Supplied Contents: Board(s)
Part Status: Active
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 25997.34 грн |
| AP1302CSSL00SMGA0-DR1 |
товар відсутній
| AR0130CSSC00SPCAH-S115-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0130CS
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0130CS
Supplied Contents: Board(s)
товар відсутній
| AR0130CSSM00SPCAH-S115-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0130CS
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0130CS
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6C00XPEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6C00XPEAH3-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6C00XPEAH-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6C00XPEAH-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6G00XPEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6G00XPEAH-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6M00XPEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6M00XPEAH-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6R00XPEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6R00XPEAH3-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6R00XPEAH-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0132AT6R00XPEAH-S215-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
Description: BOARD EVAL 1.2 MP 1/3" CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0132AT
Supplied Contents: Board(s)
товар відсутній
| AR0134CSSC00SUEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3 GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3 GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSC00SUEAH-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSM00SPCAH-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSM00SUEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSM00SUEAH-GEVB |
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" GS CIS HB
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0134CSSM25SUEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
Description: BOARD EVAL 1.2 MP 1/3" CIS MONO
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0134CS
Supplied Contents: Board(s)
Part Status: Active
товар відсутній
| AR0231AT7C00XUEAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 2MP 1/3 CIS 0 DEG CRA
Description: BOARD EVAL 2MP 1/3 CIS 0 DEG CRA
товар відсутній
| AR0237CSSC12SHRAH3-GEVB |
|
Виробник: onsemi
Description: BOARD EVAL 2MP 1/3 CIS 12 DEG MP
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237CS
Supplied Contents: Board(s)
Description: BOARD EVAL 2MP 1/3 CIS 12 DEG MP
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0237CS
Supplied Contents: Board(s)
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22352.24 грн |