| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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FDD4243-F085P | onsemi |
Description: MOSFET P-CH 40V 14A TO252Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDD8444-F085P | onsemi |
Description: MOSFET N-CH 40V 50A TO252Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 153W (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDD8445-F085P | onsemi |
Description: MOSFET N-CH 40V 50A TO252Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 79W (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDD86250-F085 | onsemi |
Description: MOSFET N-CH 150V 50A TO252Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 160W (Tj) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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FDD9409L-F085 | onsemi |
Description: MOSFET N-CH 40V 90A TO252Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 150W (Tj) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDWS9508L-F085 | onsemi |
Description: MOSFET P-CH 40V 80A 8PQFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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FDWS9509L-F085 | onsemi |
Description: MOSFET P-CH 40V 65A 8DFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-DFN (5.1x6.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 107W (Tj) Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FFSH15120A | onsemi |
Description: DIODE SIL CARB 1200V 26A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 936pF @ 1V, 100kHz Current - Average Rectified (Io): 26A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 49 шт: термін постачання 21-31 дні (днів) |
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FGH40T65SQD-F155 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 31.8 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 16.4ns/86.4ns Switching Energy: 138µJ (on), 52µJ (off) Test Condition: 400V, 10A, 6Ohm, 15V Gate Charge: 80 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 238 W |
на замовлення 303 шт: термін постачання 21-31 дні (днів) |
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FGH40T65UQDF-F155 | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/271ns Switching Energy: 989µJ (on), 310µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 306 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 231 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FGH75T65SQDT-F155 | onsemi |
Description: IGBT TRENCH FS 650V 150A TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/120ns Switching Energy: 300µJ (on), 70µJ (off) Test Condition: 400V, 18.8A, 4.7Ohm, 15V Gate Charge: 128 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 375 W |
на замовлення 165 шт: термін постачання 21-31 дні (днів) |
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FQB34P10TM-F085P | onsemi |
Description: MOSFET P-CH 100V 33.5A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.75W (Ta), 155W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FSUSB42UMX-SN00404 | onsemi |
Description: USB SWITCH Switch Circuit: DPDT Voltage - Supply, Single (V+): 2.4V ~ 4.4V Supplier Device Package: 10-UMLP (1.8x1.4) -3db Bandwidth: 720MHz On-State Resistance (Max): 6.5Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Features: Break-Before-Make, USB 2.0 Packaging: Tape & Reel (TR) Number of Channels: 2 Part Status: Obsolete Multiplexer/Demultiplexer Circuit: 2:1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MARS1-AR0136AT3-GEVB | onsemi |
Description: MARS AR0136AT HBSensor Type: Image Sensor Packaging: Bulk Part Status: Active Supplied Contents: Board(s) Utilized IC / Part: AR0136AT |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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NCL30060B3DR2G | onsemi |
Description: IC LED DRIVER OFFL NO 3A 7SOICVoltage - Supply (Max): 30V Dimming: No Supplier Device Package: 7-SOIC Topology: Flyback, Step-Down (Buck) Internal Switch(s): No Current - Output / Channel: 3A Applications: LED Lighting Operating Temperature: -40°C ~ 105°C (TJ) Type: AC DC Offline Switcher Number of Outputs: 1 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP1076ABP100G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 68% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Supplier Device Package: 7-PDIP Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 8.4 V Part Status: Active Power (Watts): 31 W |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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NCP1077BBP100G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 68% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V Supplier Device Package: 8-PDIP Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 8.4 V Part Status: Active Power (Watts): 19 W |
на замовлення 760 шт: термін постачання 21-31 дні (днів) |
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NCP145AMX100TCG | onsemi |
Description: IC REG LINEAR 1V 500MA 4-XDFNSupplier Device Package: 4-XDFN (1.2x1.2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) Current - Supply (Max): 110 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.25V @ 500mA PSRR: 70dB (1kHz) Part Status: Obsolete Control Features: Enable Voltage - Output (Min/Fixed): 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP145AMX120TCG | onsemi |
Description: IC REG LINEAR 1.2V 500MA 4-XDFNCurrent - Supply (Max): 110 µA Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.25V @ 500mA PSRR: 70dB (1kHz) Part Status: Active Control Features: Enable Voltage - Output (Min/Fixed): 1.2V Supplier Device Package: 4-XDFN (1.2x1.2) Number of Regulators: 1 Voltage - Input (Max): 5.5V Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TJ) Current - Output: 500mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NCP1602ACCSNT1G | onsemi |
Description: IC PFC CTRLR CRM 6TSOPCurrent - Startup: 480 µA Part Status: Obsolete Supplier Device Package: 6-TSOP Mode: Critical Conduction (CRM) Voltage - Supply: 9.5V ~ 30V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP4306DAHZZAASNT1G | onsemi |
Description: IC PM SEC CTRL SYNC RECT 6-TSOPPackaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 35V Applications: Secondary-Side Controller, Synchronous Rectifier Supplier Device Package: 6-TSOP Part Status: Active Current - Supply: 1.4 mA DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
| NCV78247DQ0R2G | onsemi | Description: NCV78247 LED PIXEL LIGHT |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
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NCV8163AMX180TBG | onsemi |
Description: IC REG LINEAR 1.8V 250MA 4-XDFNQualification: AEC-Q100 Protection Features: Over Current, Over Temperature Voltage Dropout (Max): 0.25V @ 250mA PSRR: 92dB ~ 60dB (100Hz ~ 100kHz) Grade: Automotive Control Features: Enable Voltage - Output (Min/Fixed): 1.8V Supplier Device Package: 4-XDFN (1x1) Number of Regulators: 1 Voltage - Input (Max): 5.5V Current - Quiescent (Iq): 20 µA Output Configuration: Positive Operating Temperature: -40°C ~ 125°C (TJ) Current - Output: 250mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 4-XDFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NCV8163AMX270TBG | onsemi |
Description: IC REG LINEAR 2.7V 250MA 4-XDFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV8163AMX280TBG | onsemi |
Description: IC REG LINEAR 2.8V 250MA 4-XDFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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NCV8163AMX300TBG | onsemi |
Description: IC REG LINEAR 3V 250MA 4-XDFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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NTB082N65S3F | onsemi |
Description: MOSFET N-CH 650V 40A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V |
на замовлення 9600 шт: термін постачання 21-31 дні (днів) |
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NTHL040N65S3F | onsemi |
Description: MOSFET N-CH 650V 65A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 6.5mA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V |
на замовлення 337 шт: термін постачання 21-31 дні (днів) |
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NTPF082N65S3F | onsemi |
Description: MOSFET N-CH 650V 40A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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NVMFS5A140PLZT1G | onsemi |
Description: MOSFET P-CH 40V 20A/140A 5DFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFS5A140PLZWFT1G | onsemi |
Description: MOSFET P-CH 40V 20A/140A 5DFNQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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RURD660S9A-F085P | onsemi |
Description: DIODE GEN PURP 600V 6A TO252AACurrent - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252AA Current - Average Rectified (Io): 6A Technology: Standard Reverse Recovery Time (trr): 83 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RURP15100-F085P | onsemi |
Description: DIODE STANDARD 1000V 15A TO2202Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 450 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1000 V |
на замовлення 666 шт: термін постачання 21-31 дні (днів) |
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RURP1560-F085P | onsemi |
Description: DIODE STANDARD 600V 15A TO2202Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Current - Average Rectified (Io): 15A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMMSZ4688T1G | onsemi |
Description: DIODE ZENER 4.7V 500MW SOD123Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 10 µA @ 3 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 500 mW Part Status: Last Time Buy Supplier Device Package: SOD-123 Voltage - Zener (Nom) (Vz): 4.7 V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SOD-123 Packaging: Cut Tape (CT) |
на замовлення 38935 шт: термін постачання 21-31 дні (днів) |
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UD1006FR-H | onsemi |
Description: DIODE GEN PURP 600V 10A |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SA1416T-TD-E | onsemi |
Description: TRANS PNP 100V 1A PCPCurrent - Collector (Ic) (Max): 1 A Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 100 V |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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2SA1552S-TL-H | onsemi |
Description: TRANS PNP 160V 1.5A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 2SB1204T-TL-E | onsemi |
Description: TRANS PNP 50V 8A TP-FA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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2SB1215S-TL-E | onsemi |
Description: TRANS PNP 100V 3A TP-FAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TP-FA Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
на замовлення 1392 шт: термін постачання 21-31 дні (днів) |
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2SB1216S-TL-E | onsemi |
Description: TRANS PNP 100V 4A TPFAVce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 4 A Supplier Device Package: TP-FA Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) |
на замовлення 1071 шт: термін постачання 21-31 дні (днів) |
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2SB1302S-TD-E | onsemi |
Description: TRANS PNP 20V 5A PCPPower - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 5 A Part Status: Obsolete Supplier Device Package: PCP Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC3649T-TD-E | onsemi |
Description: TRANS NPN 160V 1.5A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 1.5 A Part Status: Active Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
на замовлення 6397 шт: термін постачання 21-31 дні (днів) |
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2SC3649T-TD-H | onsemi |
Description: TRANS NPN 160V 1.5A PCPPower - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 1.5 A Part Status: Obsolete Supplier Device Package: PCP Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5646A-TL-H | onsemi |
Description: RF TRANS NPN 4V 12.5GHZ 3SSFPSupplier Device Package: 3-SSFP Noise Figure (dB Typ @ f): 1.5dB @ 2GHz Frequency - Transition: 10GHz ~ 12.5GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V Voltage - Collector Emitter Breakdown (Max): 4V Current - Collector (Ic) (Max): 30mA Power - Max: 100mW Gain: 9.5dB ~ 10.5dB @ 2GHz Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-81 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC6095-TD-E | onsemi |
Description: TRANS NPN 80V 2.5A PCPPower - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 2.5 A Part Status: Obsolete Supplier Device Package: PCP Frequency - Transition: 350MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC6096-TD-H | onsemi |
Description: TRANS NPN 100V 2A PCPPower - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: PCP Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD1801S-TL-E | onsemi |
Description: TRANS NPN 50V 2A TPFA |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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2SD1802T-TL-E | onsemi |
Description: TRANS NPN 50V 3A TP-FAPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Part Status: Active Supplier Device Package: TP-FA Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 742 шт: термін постачання 21-31 дні (днів) |
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2SD1805F-TL-E | onsemi |
Description: TRANS NPN 20V 5A TP-FAPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 5 A Part Status: Active Supplier Device Package: TP-FA Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 908 шт: термін постачання 21-31 дні (днів) |
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2SD1816T-TL-E | onsemi |
Description: TRANS NPN 100V 4A TP-FAPower - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 4 A Part Status: Last Time Buy Supplier Device Package: TP-FA Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V Current - Collector Cutoff (Max): 1µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2SK2394-6-TB-E | onsemi |
Description: JFET N-CH 50MA 3CPPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V Current Drain (Id) - Max: 50 mA Supplier Device Package: 3-CP Part Status: Active Drain to Source Voltage (Vdss): 15 V Power - Max: 200 mW Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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30C02CH-TL-E | onsemi |
Description: TRANS NPN 30V 0.7A 3-CPHPower - Max: 700 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: 3-CPH Frequency - Transition: 540MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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30C02MH-TL-E | onsemi |
Description: TRANS NPN 30V 0.7A 3-MCPHPower - Max: 600 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 700 mA Part Status: Active Supplier Device Package: 3-MCPH Frequency - Transition: 540MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 7447 шт: термін постачання 21-31 дні (днів) |
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7WBD383USG | onsemi |
Description: IC BUS FET EXCH SW 2 X 1:1 US8Packaging: Cut Tape (CT) Supplier Device Package: US8 Voltage Supply Source: Single Supply Independent Circuits: 1 Voltage - Supply: 4V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Bus FET Exchange Switch Circuit: 2 x 1:1 Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ATP101-TL-H | onsemi |
Description: MOSFET P-CH 30V 25A ATPAKInput Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: ATPAK Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: ATPAK (2 leads+tab) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS21HT3G | onsemi |
Description: DIODE GEN PURP 250V 200MA SOD323Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 250 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC807-40WT1G | onsemi |
Description: TRANS PNP 45V 0.5A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 460 mW |
на замовлення 5563 шт: термін постачання 21-31 дні (днів) |
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BC817-40WT1G | onsemi |
Description: TRANS NPN 45V 0.5A SC70-3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 460 mW |
на замовлення 5080 шт: термін постачання 21-31 дні (днів) |
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BC847BPDW1T3G | onsemi |
Description: TRANS NPN/PNP 45V 0.1A SC88/SC70Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| FDD4243-F085P |
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Виробник: onsemi
Description: MOSFET P-CH 40V 14A TO252
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 14A TO252
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FDD8444-F085P |
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Виробник: onsemi
Description: MOSFET N-CH 40V 50A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 50A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| FDD8445-F085P |
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Виробник: onsemi
Description: MOSFET N-CH 40V 50A TO252
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Description: MOSFET N-CH 40V 50A TO252
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
товару немає в наявності
В кошику
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| FDD86250-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 150V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 150V 50A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 160W (Tj)
Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 64.01 грн |
| FDD9409L-F085 |
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Виробник: onsemi
Description: MOSFET N-CH 40V 90A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 150W (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 90A TO252
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 150W (Tj)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
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| FDWS9508L-F085 |
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Виробник: onsemi
Description: MOSFET P-CH 40V 80A 8PQFN
Description: MOSFET P-CH 40V 80A 8PQFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| FDWS9509L-F085 |
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Виробник: onsemi
Description: MOSFET P-CH 40V 65A 8DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-DFN (5.1x6.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 107W (Tj)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 65A 8DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-DFN (5.1x6.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 107W (Tj)
Rds On (Max) @ Id, Vgs: 8mOhm @ 65A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| FFSH15120A |
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Виробник: onsemi
Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 26A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 936pF @ 1V, 100kHz
Current - Average Rectified (Io): 26A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 757.16 грн |
| 30+ | 437.67 грн |
| FGH40T65SQD-F155 |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.4ns/86.4ns
Switching Energy: 138µJ (on), 52µJ (off)
Test Condition: 400V, 10A, 6Ohm, 15V
Gate Charge: 80 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 238 W
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 339.39 грн |
| 30+ | 183.16 грн |
| 120+ | 151.42 грн |
| FGH40T65UQDF-F155 |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/271ns
Switching Energy: 989µJ (on), 310µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 306 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 231 W
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| FGH75T65SQDT-F155 |
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Виробник: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/120ns
Switching Energy: 300µJ (on), 70µJ (off)
Test Condition: 400V, 18.8A, 4.7Ohm, 15V
Gate Charge: 128 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 375 W
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 478.91 грн |
| 30+ | 265.41 грн |
| 120+ | 222.30 грн |
| FQB34P10TM-F085P |
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Виробник: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 100V 33.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| FSUSB42UMX-SN00404 |
Виробник: onsemi
Description: USB SWITCH
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
Description: USB SWITCH
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 2.4V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Break-Before-Make, USB 2.0
Packaging: Tape & Reel (TR)
Number of Channels: 2
Part Status: Obsolete
Multiplexer/Demultiplexer Circuit: 2:1
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| MARS1-AR0136AT3-GEVB |
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Виробник: onsemi
Description: MARS AR0136AT HB
Sensor Type: Image Sensor
Packaging: Bulk
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: AR0136AT
Description: MARS AR0136AT HB
Sensor Type: Image Sensor
Packaging: Bulk
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: AR0136AT
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22054.19 грн |
| NCL30060B3DR2G |
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Виробник: onsemi
Description: IC LED DRIVER OFFL NO 3A 7SOIC
Voltage - Supply (Max): 30V
Dimming: No
Supplier Device Package: 7-SOIC
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Current - Output / Channel: 3A
Applications: LED Lighting
Operating Temperature: -40°C ~ 105°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Tape & Reel (TR)
Description: IC LED DRIVER OFFL NO 3A 7SOIC
Voltage - Supply (Max): 30V
Dimming: No
Supplier Device Package: 7-SOIC
Topology: Flyback, Step-Down (Buck)
Internal Switch(s): No
Current - Output / Channel: 3A
Applications: LED Lighting
Operating Temperature: -40°C ~ 105°C (TJ)
Type: AC DC Offline Switcher
Number of Outputs: 1
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Tape & Reel (TR)
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| NCP1076ABP100G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 31 W
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 127.76 грн |
| 10+ | 90.35 грн |
| 50+ | 77.29 грн |
| 100+ | 68.72 грн |
| NCP1077BBP100G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 68%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 20V
Supplier Device Package: 8-PDIP
Fault Protection: Current Limiting, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8.4 V
Part Status: Active
Power (Watts): 19 W
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.52 грн |
| 10+ | 98.88 грн |
| 50+ | 84.66 грн |
| 100+ | 75.30 грн |
| 250+ | 70.93 грн |
| 500+ | 68.29 грн |
| NCP145AMX100TCG |
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Виробник: onsemi
Description: IC REG LINEAR 1V 500MA 4-XDFN
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Supply (Max): 110 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
Description: IC REG LINEAR 1V 500MA 4-XDFN
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Current - Supply (Max): 110 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1V
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| NCP145AMX120TCG |
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Виробник: onsemi
Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Current - Supply (Max): 110 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1.2V 500MA 4-XDFN
Current - Supply (Max): 110 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 500mA
PSRR: 70dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 1.2V
Supplier Device Package: 4-XDFN (1.2x1.2)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TJ)
Current - Output: 500mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| NCP1602ACCSNT1G |
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Виробник: onsemi
Description: IC PFC CTRLR CRM 6TSOP
Current - Startup: 480 µA
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Mode: Critical Conduction (CRM)
Voltage - Supply: 9.5V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: IC PFC CTRLR CRM 6TSOP
Current - Startup: 480 µA
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Mode: Critical Conduction (CRM)
Voltage - Supply: 9.5V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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| NCP4306DAHZZAASNT1G |
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Виробник: onsemi
Description: IC PM SEC CTRL SYNC RECT 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
Description: IC PM SEC CTRL SYNC RECT 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 35V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 6-TSOP
Part Status: Active
Current - Supply: 1.4 mA
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NCV78247DQ0R2G |
Виробник: onsemi
Description: NCV78247 LED PIXEL LIGHT
Description: NCV78247 LED PIXEL LIGHT
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
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| NCV8163AMX180TBG |
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Виробник: onsemi
Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 250mA
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 20 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 1.8V 250MA 4-XDFN
Qualification: AEC-Q100
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.25V @ 250mA
PSRR: 92dB ~ 60dB (100Hz ~ 100kHz)
Grade: Automotive
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V
Supplier Device Package: 4-XDFN (1x1)
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 20 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 250mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 4-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 11.09 грн |
| NCV8163AMX270TBG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.7V 250MA 4-XDFN
Description: IC REG LINEAR 2.7V 250MA 4-XDFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| NCV8163AMX280TBG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 2.8V 250MA 4-XDFN
Description: IC REG LINEAR 2.8V 250MA 4-XDFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NCV8163AMX300TBG |
![]() |
Виробник: onsemi
Description: IC REG LINEAR 3V 250MA 4-XDFN
Description: IC REG LINEAR 3V 250MA 4-XDFN
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
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| NTB082N65S3F |
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Виробник: onsemi
Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
Description: MOSFET N-CH 650V 40A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V
на замовлення 9600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 312.86 грн |
| NTHL040N65S3F |
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Виробник: onsemi
Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
Description: MOSFET N-CH 650V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 6.5mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 400 V
на замовлення 337 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1214.91 грн |
| 30+ | 730.83 грн |
| 60+ | 678.60 грн |
| 120+ | 627.37 грн |
| NTPF082N65S3F |
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Виробник: onsemi
Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
Description: MOSFET N-CH 650V 40A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 400 V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 549.45 грн |
| 50+ | 287.80 грн |
| 100+ | 264.61 грн |
| NVMFS5A140PLZT1G |
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Виробник: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 20A/140A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
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| NVMFS5A140PLZWFT1G |
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Виробник: onsemi
Description: MOSFET P-CH 40V 20A/140A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 20A/140A 5DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| RURD660S9A-F085P |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 6A TO252AA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 83 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE GEN PURP 600V 6A TO252AA
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 6A
Technology: Standard
Reverse Recovery Time (trr): 83 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| RURP15100-F085P |
![]() |
Виробник: onsemi
Description: DIODE STANDARD 1000V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Description: DIODE STANDARD 1000V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 450 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
на замовлення 666 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.90 грн |
| 10+ | 116.99 грн |
| 50+ | 89.02 грн |
| 100+ | 75.06 грн |
| 500+ | 60.16 грн |
| RURP1560-F085P |
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Виробник: onsemi
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE STANDARD 600V 15A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SMMSZ4688T1G |
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Виробник: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
Description: DIODE ZENER 4.7V 500MW SOD123
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Last Time Buy
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 4.7 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
на замовлення 38935 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 9.41 грн |
| 44+ | 7.02 грн |
| 100+ | 5.01 грн |
| 500+ | 3.65 грн |
| 1000+ | 2.74 грн |
| UD1006FR-H |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 10A
Description: DIODE GEN PURP 600V 10A
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| 2SA1416T-TD-E |
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Виробник: onsemi
Description: TRANS PNP 100V 1A PCP
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Description: TRANS PNP 100V 1A PCP
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 40mA, 400mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.22 грн |
| 10+ | 34.04 грн |
| 100+ | 22.02 грн |
| 500+ | 15.82 грн |
| 2SA1552S-TL-H |
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Виробник: onsemi
Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
Description: TRANS PNP 160V 1.5A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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од. на суму грн.
| 2SB1204T-TL-E |
Виробник: onsemi
Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Description: TRANS PNP 50V 8A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 4A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.11 грн |
| 10+ | 61.82 грн |
| 2SB1215S-TL-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS PNP 100V 3A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TP-FA
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
на замовлення 1392 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.17 грн |
| 10+ | 65.74 грн |
| 100+ | 43.81 грн |
| 2SB1216S-TL-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 100V 4A TPFA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TP-FA
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Description: TRANS PNP 100V 4A TPFA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TP-FA
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
на замовлення 1071 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.49 грн |
| 10+ | 52.99 грн |
| 100+ | 36.67 грн |
| 2SB1302S-TD-E |
![]() |
Виробник: onsemi
Description: TRANS PNP 20V 5A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS PNP 20V 5A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SC3649T-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
на замовлення 6397 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.87 грн |
| 10+ | 50.57 грн |
| 100+ | 33.17 грн |
| 500+ | 24.11 грн |
| 2SC3649T-TD-H |
![]() |
Виробник: onsemi
Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 160V 1.5A PCP
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SC5646A-TL-H |
![]() |
Виробник: onsemi
Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Supplier Device Package: 3-SSFP
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Frequency - Transition: 10GHz ~ 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 30mA
Power - Max: 100mW
Gain: 9.5dB ~ 10.5dB @ 2GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Cut Tape (CT)
Description: RF TRANS NPN 4V 12.5GHZ 3SSFP
Supplier Device Package: 3-SSFP
Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
Frequency - Transition: 10GHz ~ 12.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 1V
Voltage - Collector Emitter Breakdown (Max): 4V
Current - Collector (Ic) (Max): 30mA
Power - Max: 100mW
Gain: 9.5dB ~ 10.5dB @ 2GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-81
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SC6095-TD-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 80V 2.5A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 80V 2.5A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2.5 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SC6096-TD-H |
![]() |
Виробник: onsemi
Description: TRANS NPN 100V 2A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 100V 2A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: PCP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1801S-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 2A TPFA
Description: TRANS NPN 50V 2A TPFA
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 51.73 грн |
| 10+ | 42.65 грн |
| 100+ | 31.83 грн |
| 2SD1802T-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 50V 3A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TP-FA
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 3A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TP-FA
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.30 грн |
| 10+ | 67.70 грн |
| 100+ | 45.21 грн |
| 2SD1805F-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 20V 5A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TP-FA
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: TRANS NPN 20V 5A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TP-FA
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 908 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.30 грн |
| 10+ | 85.97 грн |
| 100+ | 57.91 грн |
| 2SD1816T-TL-E |
![]() |
Виробник: onsemi
Description: TRANS NPN 100V 4A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Part Status: Last Time Buy
Supplier Device Package: TP-FA
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: TRANS NPN 100V 4A TP-FA
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Part Status: Last Time Buy
Supplier Device Package: TP-FA
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| 2SK2394-6-TB-E |
![]() |
Виробник: onsemi
Description: JFET N-CH 50MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
Description: JFET N-CH 50MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 10pF @ 5V
Current Drain (Id) - Max: 50 mA
Supplier Device Package: 3-CP
Part Status: Active
Drain to Source Voltage (Vdss): 15 V
Power - Max: 200 mW
Voltage - Cutoff (VGS off) @ Id: 300 mV @ 100 µA
Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.92 грн |
| 10+ | 36.76 грн |
| 50+ | 27.01 грн |
| 100+ | 22.37 грн |
| 500+ | 17.13 грн |
| 30C02CH-TL-E |
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Виробник: onsemi
Description: TRANS NPN 30V 0.7A 3-CPH
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: 3-CPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 0.7A 3-CPH
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: 3-CPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 18+ | 17.51 грн |
| 30C02MH-TL-E |
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Виробник: onsemi
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS NPN 30V 0.7A 3-MCPH
Power - Max: 600 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 700 mA
Part Status: Active
Supplier Device Package: 3-MCPH
Frequency - Transition: 540MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 7447 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.19 грн |
| 13+ | 23.32 грн |
| 100+ | 14.87 грн |
| 500+ | 10.50 грн |
| 1000+ | 9.39 грн |
| 7WBD383USG |
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Виробник: onsemi
Description: IC BUS FET EXCH SW 2 X 1:1 US8
Packaging: Cut Tape (CT)
Supplier Device Package: US8
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus FET Exchange Switch
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Description: IC BUS FET EXCH SW 2 X 1:1 US8
Packaging: Cut Tape (CT)
Supplier Device Package: US8
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus FET Exchange Switch
Circuit: 2 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
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| ATP101-TL-H |
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Виробник: onsemi
Description: MOSFET P-CH 30V 25A ATPAK
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: ATPAK
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: ATPAK (2 leads+tab)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 25A ATPAK
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: ATPAK
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: ATPAK (2 leads+tab)
Packaging: Cut Tape (CT)
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| BAS21HT3G |
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Виробник: onsemi
Description: DIODE GEN PURP 250V 200MA SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 250V 200MA SOD323
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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| BC807-40WT1G |
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Виробник: onsemi
Description: TRANS PNP 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Description: TRANS PNP 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
на замовлення 5563 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 13.32 грн |
| 39+ | 7.85 грн |
| 100+ | 4.82 грн |
| 500+ | 3.29 грн |
| 1000+ | 2.89 грн |
| BC817-40WT1G |
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Виробник: onsemi
Description: TRANS NPN 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
Description: TRANS NPN 45V 0.5A SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 460 mW
на замовлення 5080 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.54 грн |
| 41+ | 7.47 грн |
| 100+ | 4.61 грн |
| 500+ | 3.14 грн |
| 1000+ | 2.76 грн |
| BC847BPDW1T3G |
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Виробник: onsemi
Description: TRANS NPN/PNP 45V 0.1A SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Description: TRANS NPN/PNP 45V 0.1A SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.68 грн |
| 34+ | 9.13 грн |
| 100+ | 5.65 грн |
| 500+ | 3.87 грн |
| 1000+ | 3.41 грн |
| 2000+ | 3.02 грн |
| 5000+ | 2.55 грн |







































