| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SMUN5211T1 | onsemi |
Description: TRANS PREBIAS NPN SC70-3Packaging: Bulk |
на замовлення 42000 шт: термін постачання 21-31 дні (днів) |
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| TR00278 | onsemi |
Description: REC MICRO BUTTON SPECIAL Packaging: Bulk Part Status: Active |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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| 2SK1740-5-TB-E-ON | onsemi |
Description: N-CHANNEL JUNCTION SILICON FET Packaging: Bulk Part Status: Active |
на замовлення 66843 шт: термін постачання 21-31 дні (днів) |
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NDD60N550U1-35G | onsemi |
Description: MOSFET N-CH 600V 8.2A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
на замовлення 20625 шт: термін постачання 21-31 дні (днів) |
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NDD60N550U1-1G | onsemi |
Description: MOSFET N-CH 600V 8.2A IPAKPackaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I-PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
на замовлення 20475 шт: термін постачання 21-31 дні (днів) |
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SZBZX84C75LT3 | onsemi |
Description: DIODE ZENER SINGLE 75V 6% 300MWPackaging: Bulk Tolerance: ±6% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 255 Ohms Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Power - Max: 225 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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NCL30080BSNT1G | onsemi |
Description: IC LED DRIVER OFFL 6TSOPPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TA) Internal Switch(s): No Topology: Flyback Supplier Device Package: 6-TSOP Voltage - Supply (Min): 8.8V Voltage - Supply (Max): 28V |
на замовлення 353685 шт: термін постачання 21-31 дні (днів) |
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NCL30080ASNT1G | onsemi |
Description: IC LED DRIVER OFFL 6TSOPPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TA) Internal Switch(s): No Topology: Flyback Supplier Device Package: 6-TSOP Voltage - Supply (Min): 8.8V Voltage - Supply (Max): 28V |
на замовлення 53760 шт: термін постачання 21-31 дні (днів) |
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NCL30081BSNT1G | onsemi |
Description: IC LED DRIVER OFFL 6TSOPPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TA) Internal Switch(s): No Topology: Flyback Supplier Device Package: 6-TSOP Voltage - Supply (Min): 8.8V Voltage - Supply (Max): 20V |
на замовлення 63000 шт: термін постачання 21-31 дні (днів) |
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NCL30081ASNT1G | onsemi |
Description: IC LED DRIVER OFFLINE 6TSOPPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TA) Internal Switch(s): No Topology: Flyback Supplier Device Package: 6-TSOP Voltage - Supply (Min): 8.8V Voltage - Supply (Max): 20V |
на замовлення 25475 шт: термін постачання 21-31 дні (днів) |
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NLAS4599DFT2 | onsemi |
Description: IC SWITCH SPDTX1 25OHM SC88Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 25Ohm -3db Bandwidth: 220MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Voltage - Supply, Single (V+): 2V ~ 5.5V Charge Injection: 3pC Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 2Ohm Switch Time (Ton, Toff) (Max): 14ns, 8ns Channel Capacitance (CS(off), CD(off)): 10pF, 10pF Current - Leakage (IS(off)) (Max): 100nA Number of Circuits: 1 |
на замовлення 2359340 шт: термін постачання 21-31 дні (днів) |
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MC74VHCT573ADT | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5.1ns Supplier Device Package: 20-TSSOP |
на замовлення 9770 шт: термін постачання 21-31 дні (днів) |
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MC74VHCT573ADWR2 | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20SOICPackaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5.1ns Supplier Device Package: 20-SOIC |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MC74VHCT573ADW | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5.1ns Supplier Device Package: 20-SOIC |
на замовлення 3698 шт: термін постачання 21-31 дні (днів) |
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CS52015-1GSTR3 | onsemi |
Description: IC REG LIN POS ADJ 1.5A SOT-223Packaging: Bulk Package / Case: TO-261-4, TO-261AA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: 0°C ~ 70°C Output Configuration: Positive Current - Quiescent (Iq): 2 mA Voltage - Input (Max): 7V Number of Regulators: 1 Supplier Device Package: SOT-223 (TO-261) Voltage - Output (Max): 5.5V Voltage - Output (Min/Fixed): 1.25V Part Status: Obsolete PSRR: 80dB (120Hz) Voltage Dropout (Max): 1.4V @ 1.5A Protection Features: Over Current, Over Temperature |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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MC33267D2T | onsemi |
Description: IC REG LINEAR FIXED LDO REGPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2N6401 | onsemi |
Description: SCR 100V 16A TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A @ 60Hz Current - On State (It (AV)) (Max): 10 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB Part Status: Obsolete Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 100 V |
на замовлення 5233 шт: термін постачання 21-31 дні (днів) |
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2N6402 | onsemi |
Description: THYRISTOR SCR 16A 200V TO-220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A @ 60Hz Current - On State (It (AV)) (Max): 10 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220AB Part Status: Obsolete Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 200 V |
на замовлення 4424 шт: термін постачання 21-31 дні (днів) |
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2N6403 | onsemi |
Description: THYRISTOR SCR 16A 400V TO220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Current - Hold (Ih) (Max): 40 mA Current - Gate Trigger (Igt) (Max): 30 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A @ 60Hz Current - On State (It (AV)) (Max): 10 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Supplier Device Package: TO-220AB Part Status: Obsolete Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 400 V |
на замовлення 550 шт: термін постачання 21-31 дні (днів) |
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FDS9431A-F085 | onsemi |
Description: MOSFET P-CH 20V 3.5A 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDS9431A-F085 | onsemi |
Description: MOSFET P-CH 20V 3.5A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NC7ST08P5 | onsemi |
Description: IC GATE AND 1CH 2-INP SC70-5Packaging: Bulk Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 2mA, 2mA Number of Inputs: 2 Supplier Device Package: SC-70-5 Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 1495 шт: термін постачання 21-31 дні (днів) |
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NCP1215SNT1 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOPPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 6-TSOP Voltage - Start Up: 12.5 V |
на замовлення 2300 шт: термін постачання 21-31 дні (днів) |
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NCP1215DR2 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 8-SOIC Voltage - Start Up: 12.5 V |
на замовлення 255000 шт: термін постачання 21-31 дні (днів) |
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NCP1215ASNT1G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 6TSOPPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 6-TSOP Voltage - Start Up: 12.5 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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NCP1215DR2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 9V ~ 18V Supplier Device Package: 8-SOIC Voltage - Start Up: 12.5 V |
на замовлення 160000 шт: термін постачання 21-31 дні (днів) |
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DFH10TE | onsemi |
Description: DIODE STANDARD 400V 1APackaging: Bulk Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 163413 шт: термін постачання 21-31 дні (днів) |
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NDBA100N10BT4H | onsemi |
Description: MOSFET N-CH 100V 100A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V |
на замовлення 8679 шт: термін постачання 21-31 дні (днів) |
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DBA100G | onsemi |
Description: BRIDGE RECT 1PHASE 600V 3.7APackaging: Tray Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: 150°C (TJ) Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.7 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 23000 шт: термін постачання 21-31 дні (днів) |
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NTLJD3115PTAG | onsemi |
Description: MOSFET 2P-CH 20V 2.3A 6WDFNPackaging: Bulk Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
на замовлення 4058 шт: термін постачання 21-31 дні (днів) |
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MUR105RL | onsemi |
Description: DIODE GEN PURP 50V 1A AXIALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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| MUR105 | onsemi |
Description: DIODE ULTRA FAST 1A 50V DO-41Packaging: Bulk |
на замовлення 5285 шт: термін постачання 21-31 дні (днів) |
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MUR180E | onsemi |
Description: DIODE STANDARD 800V 1A AXIALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 19067 шт: термін постачання 21-31 дні (днів) |
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MUR180ERL | onsemi |
Description: DIODE GEN PURP 800V 1A AXIALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 3011 шт: термін постачання 21-31 дні (днів) |
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MBR1240MFST1G | onsemi |
Description: DIODE SCHOTTKY 40V 12A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SMA4206-TL-E | onsemi |
Description: OSC IC FOR LASER DIODE Packaging: Bulk |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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| SMA4205-TR-E-ON | onsemi |
Description: HIGH FREQUENCY OSCILLATOR IC FOR Packaging: Bulk |
на замовлення 639000 шт: термін постачання 21-31 дні (днів) |
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NTHD4401PT1 | onsemi |
Description: MOSFET 2P-CH 20V 2.1A CHIPFETPackaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Obsolete |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTHD4401PT1G | onsemi |
Description: MOSFET 2P-CH 20V 2.1A CHIPFETPackaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Obsolete |
на замовлення 1173045 шт: термін постачання 21-31 дні (днів) |
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NTHD4401PT3G | onsemi |
Description: MOSFET 2P-CH 20V 2.1A CHIPFETPackaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.1A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: ChipFET™ Part Status: Obsolete |
на замовлення 95300 шт: термін постачання 21-31 дні (днів) |
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SMSD1001T3 | onsemi |
Description: SS SOD123 SHKY DIO SPCL Packaging: Bulk |
на замовлення 300000 шт: термін постачання 21-31 дні (днів) |
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| SMSD1001T1 | onsemi |
Description: SS SOD123 SHKY DIO SPCL Packaging: Bulk |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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FDMS4D5N08LC | onsemi |
Description: MOSFET N-CH 80V 17A/116A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 210µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDMS4D5N08LC | onsemi |
Description: MOSFET N-CH 80V 17A/116A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 210µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V |
на замовлення 2251 шт: термін постачання 21-31 дні (днів) |
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NSVC2050JBT3G | onsemi |
Description: IC CURRENT REGULATOR 15% SMBPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 50mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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NSVC2050JBT3G | onsemi |
Description: IC CURRENT REGULATOR 15% SMBPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Sensing Method: High/Low-Side Mounting Type: Surface Mount Function: Current Regulator Voltage - Input: 120V Current - Output: 50mA Accuracy: ±15% Operating Temperature: -55°C ~ 175°C Supplier Device Package: SMB Grade: Automotive Qualification: AEC-Q101 |
на замовлення 39764 шт: термін постачання 21-31 дні (днів) |
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30A01M-TL-E | onsemi |
Description: BIP PNP 0.3A 30V |
на замовлення 129000 шт: термін постачання 21-31 дні (днів) |
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UMC5NT2 | onsemi |
Description: TRANS BRT DUAL 50V SOT-353Packaging: Bulk Voltage - Rated: 50V Package / Case: 5-TSSOP, SC-70-5, SOT-353 Current Rating (Amps): 100mA Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Supplier Device Package: SC-88A (SC-70-5/SOT-353) |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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| ECH8901-TL-H | onsemi |
Description: PCH+PNP 1.8V DRIVE SERIES Packaging: Bulk |
на замовлення 753000 шт: термін постачання 21-31 дні (днів) |
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NUS5531MTR2G | onsemi |
Description: MOSFET/BJT SGL P-CH 12V 8-WDFNPackaging: Bulk Voltage - Rated: 20V PNP, 12V P-Channel Package / Case: 8-WDFN Exposed Pad Current Rating (Amps): 2A PNP, 5.47A P-Channel Mounting Type: Surface Mount Transistor Type: PNP, P-Channel Applications: General Purpose Supplier Device Package: 8-WDFN (3x3) |
на замовлення 396000 шт: термін постачання 21-31 дні (днів) |
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MC14068BFEL | onsemi |
Description: IC GATE NAND Packaging: Bulk Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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| MC14068BF | onsemi |
Description: NAND GATE, 4000/14000/40000 SERI Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| WPB4002-1E | onsemi |
Description: MOSFET N-CH 600V 23A TO3P-3L Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V Power Dissipation (Max): 2.5W (Ta), 220W (Tc) Supplier Device Package: TO-3P-3L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
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NSBA143TDXV6T5 | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 |
на замовлення 56000 шт: термін постачання 21-31 дні (днів) |
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NSBA143EDXV6T1 | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-563 |
на замовлення 44000 шт: термін постачання 21-31 дні (днів) |
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NSBA143ZDXV6T1 | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
на замовлення 43990 шт: термін постачання 21-31 дні (днів) |
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NSBA143TDXV6T1 | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-563 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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NSBA144EDXV6T1 | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
на замовлення 32000 шт: термін постачання 21-31 дні (днів) |
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NSBA144EDXV6T5 | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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NSBA143ZDXV6T1G | onsemi |
Description: TRANS PREBIAS 2PNP 50V SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
| SMUN5211T1 |
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на замовлення 42000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5453+ | 4.35 грн |
| TR00278 |
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1110+ | 22.25 грн |
| 2SK1740-5-TB-E-ON |
на замовлення 66843 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 176+ | 120.11 грн |
| NDD60N550U1-35G |
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Виробник: onsemi
Description: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 20625 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 289+ | 73.05 грн |
| NDD60N550U1-1G |
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Виробник: onsemi
Description: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 8.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 20475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 351+ | 67.08 грн |
| SZBZX84C75LT3 |
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Виробник: onsemi
Description: DIODE ZENER SINGLE 75V 6% 300MW
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER SINGLE 75V 6% 300MW
Packaging: Bulk
Tolerance: ±6%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 52.5 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.22 грн |
| NCL30080BSNT1G |
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Виробник: onsemi
Description: IC LED DRIVER OFFL 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 28V
Description: IC LED DRIVER OFFL 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 28V
на замовлення 353685 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 683+ | 31.88 грн |
| NCL30080ASNT1G |
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Виробник: onsemi
Description: IC LED DRIVER OFFL 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 28V
Description: IC LED DRIVER OFFL 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 28V
на замовлення 53760 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 833+ | 28.40 грн |
| NCL30081BSNT1G |
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Виробник: onsemi
Description: IC LED DRIVER OFFL 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 20V
Description: IC LED DRIVER OFFL 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 20V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 740+ | 32.35 грн |
| NCL30081ASNT1G |
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Виробник: onsemi
Description: IC LED DRIVER OFFLINE 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 20V
Description: IC LED DRIVER OFFLINE 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 6-TSOP
Voltage - Supply (Min): 8.8V
Voltage - Supply (Max): 20V
на замовлення 25475 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 740+ | 32.35 грн |
| NLAS4599DFT2 |
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Виробник: onsemi
Description: IC SWITCH SPDTX1 25OHM SC88
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Description: IC SWITCH SPDTX1 25OHM SC88
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 25Ohm
-3db Bandwidth: 220MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Voltage - Supply, Single (V+): 2V ~ 5.5V
Charge Injection: 3pC
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
на замовлення 2359340 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4438+ | 5.52 грн |
| MC74VHCT573ADT |
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Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
на замовлення 9770 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1680+ | 13.68 грн |
| MC74VHCT573ADWR2 |
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Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-SOIC
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1680+ | 13.68 грн |
| MC74VHCT573ADW |
![]() |
Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-SOIC
на замовлення 3698 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1680+ | 13.68 грн |
| CS52015-1GSTR3 |
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Виробник: onsemi
Description: IC REG LIN POS ADJ 1.5A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223 (TO-261)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1.5A
Protection Features: Over Current, Over Temperature
Description: IC REG LIN POS ADJ 1.5A SOT-223
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: 0°C ~ 70°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 7V
Number of Regulators: 1
Supplier Device Package: SOT-223 (TO-261)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1.5A
Protection Features: Over Current, Over Temperature
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 546+ | 38.94 грн |
| 2N6401 |
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Виробник: onsemi
Description: SCR 100V 16A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A @ 60Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 100 V
Description: SCR 100V 16A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A @ 60Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 100 V
на замовлення 5233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 807+ | 28.55 грн |
| 2N6402 |
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Виробник: onsemi
Description: THYRISTOR SCR 16A 200V TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A @ 60Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 200 V
Description: THYRISTOR SCR 16A 200V TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A @ 60Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 200 V
на замовлення 4424 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 807+ | 28.55 грн |
| 2N6403 |
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Виробник: onsemi
Description: THYRISTOR SCR 16A 400V TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A @ 60Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 400 V
Description: THYRISTOR SCR 16A 400V TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A @ 60Hz
Current - On State (It (AV)) (Max): 10 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-220AB
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 400 V
на замовлення 550 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 398+ | 61.81 грн |
| FDS9431A-F085 |
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Виробник: onsemi
Description: MOSFET P-CH 20V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 3.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FDS9431A-F085 |
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Виробник: onsemi
Description: MOSFET P-CH 20V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| NC7ST08P5 |
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Виробник: onsemi
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 2mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 26ns @ 5.5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1495+ | 19.59 грн |
| NCP1215SNT1 |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 6-TSOP
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 6-TSOP
Voltage - Start Up: 12.5 V
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1397+ | 14.84 грн |
| NCP1215DR2 |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
на замовлення 255000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1137+ | 18.37 грн |
| NCP1215ASNT1G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 6-TSOP
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 6TSOP
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 6-TSOP
Voltage - Start Up: 12.5 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 699+ | 30.38 грн |
| NCP1215DR2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 9V ~ 18V
Supplier Device Package: 8-SOIC
Voltage - Start Up: 12.5 V
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 626+ | 33.91 грн |
| DFH10TE |
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Виробник: onsemi
Description: DIODE STANDARD 400V 1A
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 163413 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 519+ | 40.98 грн |
| NDBA100N10BT4H |
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Виробник: onsemi
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 50A, 15V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 50 V
на замовлення 8679 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 310+ | 76.09 грн |
| DBA100G |
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Виробник: onsemi
Description: BRIDGE RECT 1PHASE 600V 3.7A
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.7 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 3.7A
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.7 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 23000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 214+ | 110.45 грн |
| NTLJD3115PTAG |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
на замовлення 4058 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1285+ | 16.16 грн |
| MUR105RL |
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Виробник: onsemi
Description: DIODE GEN PURP 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Description: DIODE GEN PURP 50V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3806+ | 6.17 грн |
| MUR105 |
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на замовлення 5285 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3806+ | 6.31 грн |
| MUR180E |
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Виробник: onsemi
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 19067 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1680+ | 13.04 грн |
| MUR180ERL |
![]() |
Виробник: onsemi
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 3011 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 11.53 грн |
| MBR1240MFST1G |
![]() |
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 12A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| SMA4206-TL-E |
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4438+ | 5.26 грн |
| SMA4205-TR-E-ON |
на замовлення 639000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1567+ | 14.28 грн |
| NTHD4401PT1 |
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Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2219+ | 10.29 грн |
| NTHD4401PT1G |
![]() |
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
на замовлення 1173045 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1268+ | 17.63 грн |
| NTHD4401PT3G |
![]() |
Виробник: onsemi
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Description: MOSFET 2P-CH 20V 2.1A CHIPFET
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
на замовлення 95300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1268+ | 18.08 грн |
| SMSD1001T3 |
на замовлення 300000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9458+ | 2.28 грн |
| SMSD1001T1 |
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9458+ | 2.28 грн |
| FDMS4D5N08LC |
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Виробник: onsemi
Description: MOSFET N-CH 80V 17A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 210µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
Description: MOSFET N-CH 80V 17A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 210µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| FDMS4D5N08LC |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 80V 17A/116A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 210µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
Description: MOSFET N-CH 80V 17A/116A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 37A, 10V
Power Dissipation (Max): 2.5W (Ta), 113.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 210µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 40 V
на замовлення 2251 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.68 грн |
| 10+ | 105.39 грн |
| 100+ | 98.97 грн |
| NSVC2050JBT3G |
![]() |
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 50mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Grade: Automotive
Qualification: AEC-Q101
Description: IC CURRENT REGULATOR 15% SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 50mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Grade: Automotive
Qualification: AEC-Q101
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 13.65 грн |
| NSVC2050JBT3G |
![]() |
Виробник: onsemi
Description: IC CURRENT REGULATOR 15% SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 50mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Grade: Automotive
Qualification: AEC-Q101
Description: IC CURRENT REGULATOR 15% SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 50mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Grade: Automotive
Qualification: AEC-Q101
на замовлення 39764 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.00 грн |
| 10+ | 43.65 грн |
| 25+ | 36.22 грн |
| 100+ | 26.10 грн |
| 250+ | 22.22 грн |
| 500+ | 19.83 грн |
| 1000+ | 17.53 грн |
| 30A01M-TL-E |
![]() |
Виробник: onsemi
Description: BIP PNP 0.3A 30V
Description: BIP PNP 0.3A 30V
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7212+ | 3.23 грн |
| UMC5NT2 |
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Виробник: onsemi
Description: TRANS BRT DUAL 50V SOT-353
Packaging: Bulk
Voltage - Rated: 50V
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Description: TRANS BRT DUAL 50V SOT-353
Packaging: Bulk
Voltage - Rated: 50V
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5323+ | 4.52 грн |
| ECH8901-TL-H |
на замовлення 753000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2049+ | 12.36 грн |
| NUS5531MTR2G |
![]() |
Виробник: onsemi
Description: MOSFET/BJT SGL P-CH 12V 8-WDFN
Packaging: Bulk
Voltage - Rated: 20V PNP, 12V P-Channel
Package / Case: 8-WDFN Exposed Pad
Current Rating (Amps): 2A PNP, 5.47A P-Channel
Mounting Type: Surface Mount
Transistor Type: PNP, P-Channel
Applications: General Purpose
Supplier Device Package: 8-WDFN (3x3)
Description: MOSFET/BJT SGL P-CH 12V 8-WDFN
Packaging: Bulk
Voltage - Rated: 20V PNP, 12V P-Channel
Package / Case: 8-WDFN Exposed Pad
Current Rating (Amps): 2A PNP, 5.47A P-Channel
Mounting Type: Surface Mount
Transistor Type: PNP, P-Channel
Applications: General Purpose
Supplier Device Package: 8-WDFN (3x3)
на замовлення 396000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 761+ | 30.09 грн |
| MC14068BFEL |
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2019+ | 10.60 грн |
| WPB4002-1E |
Виробник: onsemi
Description: MOSFET N-CH 600V 23A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3P-3L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Description: MOSFET N-CH 600V 23A TO3P-3L
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 220W (Tc)
Supplier Device Package: TO-3P-3L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 97+ | 228.52 грн |
| NSBA143TDXV6T5 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.95 грн |
| NSBA143EDXV6T1 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SOT-563
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.95 грн |
| NSBA143ZDXV6T1 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
на замовлення 43990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.95 грн |
| NSBA143TDXV6T1 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SOT-563
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.95 грн |
| NSBA144EDXV6T1 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.95 грн |
| NSBA144EDXV6T5 |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4537+ | 4.95 грн |
| NSBA143ZDXV6T1G |
![]() |
Виробник: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Part Status: Active
Description: TRANS PREBIAS 2PNP 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Part Status: Active
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