| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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| 2SC5966-CA | onsemi |
Description: BIP NPN 20A 800V Packaging: Bulk Part Status: Active |
на замовлення 5992 шт: термін постачання 21-31 дні (днів) |
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NTLJS7D2P02P8ZTAG | onsemi |
Description: MOSFET P-CH 20V 7.9A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NTLJS7D2P02P8ZTAG | onsemi |
Description: MOSFET P-CH 20V 7.9A 6PQFNGate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V |
на замовлення 36114 шт: термін постачання 21-31 дні (днів) |
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NTLJS5D0N03CTAG | onsemi |
Description: MOSFET N-CH 30V 11.2A 6PQFNPower Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.2V @ 250µA |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NTLJS5D0N03CTAG | onsemi |
Description: MOSFET N-CH 30V 11.2A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 35828 шт: термін постачання 21-31 дні (днів) |
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NTLJS3D0N02P8ZTAG | onsemi |
Description: MOSFET N-CH 20V 12.1A 6PQFNCurrent - Continuous Drain (Id) @ 25°C: 12.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTLJS3D0N02P8ZTAG | onsemi |
Description: MOSFET N-CH 20V 12.1A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 7088 шт: термін постачання 21-31 дні (днів) |
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NTLJS17D0P03P8ZTAG | onsemi |
Description: MOSFET P-CH 30V 7A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTLJS17D0P03P8ZTAG | onsemi |
Description: MOSFET P-CH 30V 7A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 5086 шт: термін постачання 21-31 дні (днів) |
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NVTFWS014P04M8LTAG | onsemi |
Description: MOSFET P-CH 40V 11.3A/49A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
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NVTFWS014P04M8LTAG | onsemi |
Description: MOSFET P-CH 40V 11.3A/49A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 547 шт: термін постачання 21-31 дні (днів) |
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NVTFWS9D6P04M8LTAG | onsemi |
Description: MOSFET P-CH 40V 13A/64A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NVTFWS9D6P04M8LTAG | onsemi |
Description: MOSFET P-CH 40V 13A/64A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 9090 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C628NWFT1G | onsemi |
Description: MOSFET N-CH 60V 28A/150A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||
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NVMFS5C628NWFT1G | onsemi |
Description: MOSFET N-CH 60V 28A/150A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 670 шт: термін постачання 21-31 дні (днів) |
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NXV04V120DB1 | onsemi |
Description: 3-PHASE INVERTER AUTOMOTIPackaging: Tube Package / Case: 19-PowerDIP Module (1.480", 37.60mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Grade: Automotive Current: 160 A Voltage: 40 V |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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NC7S04M5-ON | onsemi |
Description: INVERTER, HC/UH SERIES, 1 FUNC, |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| LA6358NSLL-E | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 9SIPVoltage - Supply Span (Max): 30 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 9-SIP Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA Operating Temperature: -30°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 9-SIP Packaging: Bulk |
на замовлення 18024 шт: термін постачання 21-31 дні (днів) |
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LA6358NLL-E | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8DIPVoltage - Supply Span (Max): 30 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-DIP Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA Operating Temperature: -30°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk |
на замовлення 43543 шт: термін постачання 21-31 дні (днів) |
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LA6358NL-E | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8DIPSupplier Device Package: 8-DIP Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA Operating Temperature: -30°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk Voltage - Supply Span (Max): 30 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 2 Part Status: Active |
на замовлення 18180 шт: термін постачання 21-31 дні (днів) |
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LA6358N-E | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8DIPOperating Temperature: -30°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk Voltage - Supply Span (Max): 30 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-DIP Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA |
на замовлення 576 шт: термін постачання 21-31 дні (днів) |
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SNRVUD620CTT4G | onsemi |
Description: DIODE ARRAY GP 200V 3A DPAKQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SNRVUD620CTT4G | onsemi |
Description: DIODE ARRAY GP 200V 3A DPAKCurrent - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DPAK |
на замовлення 5879 шт: термін постачання 21-31 дні (днів) |
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NRVUB1620CTT4G | onsemi |
Description: DIODE GEN PURP 200V 8A D2PAK-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NRVUB1620CTT4G | onsemi |
Description: DIODE GEN PURP 200V 8A D2PAK-3 |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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NRVTS8100PFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 8A TO2773Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 660pF @ 1V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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| XCY99008BR2 | onsemi |
Description: PWM CURRENT-MODE CONTROLLER Packaging: Bulk |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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CS51021ED16 | onsemi |
Description: CURRENT MODE PWM CONTROLLER 1APart Status: Active Packaging: Bulk |
на замовлення 1728 шт: термін постачання 21-31 дні (днів) |
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| LV52206XA-TSD | onsemi |
Description: SEU - MOBILE DRIVER, 33048080 Packaging: Bulk Part Status: Active |
на замовлення 95000 шт: термін постачання 21-31 дні (днів) |
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| 2SC2344E | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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LC75844MHS-MPB-E | onsemi |
Description: IC DRVR 88 SEGMENT 36MFPSDJPackaging: Tube Package / Case: 36-SOP (0.311", 7.90mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 88 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 6V Supplier Device Package: 36-MFPSDJ Part Status: Obsolete Current - Supply: 230 µA |
на замовлення 1523 шт: термін постачання 21-31 дні (днів) |
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MJE18002 | onsemi |
Description: TRANS NPN 450V 2A TO-220Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 450 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: TO-220 Frequency - Transition: 13MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 4437 шт: термін постачання 21-31 дні (днів) |
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MJE18002G | onsemi |
Description: TRANS NPN 450V 2A TO-220Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 450 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: TO-220 Frequency - Transition: 13MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 65841 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5226BLT1G | onsemi |
Description: DIODE ZENER 3.3V 225MW SOT23-3Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 25 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 225 mW Supplier Device Package: SOT-23-3 (TO-236) Impedance (Max) (Zzt): 28 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 16320 шт: термін постачання 21-31 дні (днів) |
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MC10H115FNR2G | onsemi |
Description: IC RECEIVER 0/4 20PLCC |
на замовлення 5737 шт: термін постачання 21-31 дні (днів) |
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MC10H115FNR2 | onsemi |
Description: IC RECEIVER 0/4 20PLCC |
на замовлення 4217 шт: термін постачання 21-31 дні (днів) |
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| SB0030-04A-AT1 | onsemi |
Description: DIODE SCHOTTKY 40V 30MA Part Status: Active Packaging: Bulk |
на замовлення 705000 шт: термін постачання 21-31 дні (днів) |
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| SB0030-04A | onsemi |
Description: RECTIFIER DIODE, SCHOTTKYPart Status: Active Packaging: Bulk |
на замовлення 108292 шт: термін постачання 21-31 дні (днів) |
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| H11G46 | onsemi |
Description: PHOTO DARLINGTON OPTOISOLATOR Current - DC Forward (If) (Max): 60 mA Number of Channels: 1 Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Tube Part Status: Obsolete Voltage - Output (Max): 55V Supplier Device Package: 6-DIP Current Transfer Ratio (Min): 350% @ 500µA Voltage - Isolation: 3750Vrms Current - Output / Channel: 60mA Input Type: DC Mounting Type: Through Hole Output Type: Darlington with Base |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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NL17SZ125DFT2G9D | onsemi |
Description: LOG NON-INVRT 3-STATE BUF Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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NL17SZ125DFT2 | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC88A |
на замовлення 73632 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5770 шт В кошику од. на суму грн. | ||||||||||
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CS3524AGN16 | onsemi |
Description: SWITCHING CONTROLLERPackaging: Bulk |
на замовлення 27748 шт: термін постачання 21-31 дні (днів) |
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CS3524AGDWR16 | onsemi |
Description: SWITCHING CONTROLLERPackaging: Bulk |
на замовлення 28338 шт: термін постачання 21-31 дні (днів) |
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CS3524AGDW16 | onsemi |
Description: SWITCHING CONTROLLERPackaging: Bulk |
на замовлення 235 шт: термін постачання 21-31 дні (днів) |
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NCP1218AD65R2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7SOICPart Status: Obsolete Voltage - Start Up: 12.7 V Fault Protection: Over Load, Over Temperature, Over Voltage Supplier Device Package: 7-SOIC Voltage - Supply (Vcc/Vdd): 9.9V ~ 20V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 80% Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads Packaging: Bulk |
на замовлення 28137 шт: термін постачання 21-31 дні (днів) |
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NCP1217AD65R2 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 150°C (TJ) Duty Cycle: 46.5% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V Supplier Device Package: 8-SOIC Fault Protection: Over Load, Over Temperature, Short Circuit Voltage - Start Up: 12.8 V Part Status: Obsolete |
на замовлення 6776 шт: термін постачання 21-31 дні (днів) |
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NCP1249AD65R2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 9SOICPackaging: Bulk Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 30V Supplier Device Package: 9-SOIC Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 18 V Part Status: Obsolete |
на замовлення 16682 шт: термін постачання 21-31 дні (днів) |
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MPS2369RLRA | onsemi |
Description: TRANS NPN 15V 0.2A TO92Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 15 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: TO-92 (TO-226) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Current - Collector Cutoff (Max): 400nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Packaging: Bulk |
на замовлення 20588 шт: термін постачання 21-31 дні (днів) |
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NLV14099BDWR2G | onsemi |
Description: IC LATCH 8BIT 16SOICDelay Time - Propagation: 50ns Current - Output High, Low: 8.8mA, 8.8mA Independent Circuits: 1 Voltage - Supply: 3V ~ 18V Operating Temperature: -55°C ~ 125°C Logic Type: D-Type, Addressable Circuit: 4:4 Mounting Type: Surface Mount Output Type: Standard Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Bulk Qualification: AEC-Q100 Grade: Automotive Supplier Device Package: 16-SOIC |
на замовлення 26241 шт: термін постачання 21-31 дні (днів) |
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| NLV14067BDWR2G | onsemi |
Description: IC MUX 16:1 280OHM 24SOICQualification: AEC-Q100 Number of Circuits: 1 Grade: Automotive Current - Leakage (IS(off)) (Max): 100nA Channel Capacitance (CS(off), CD(off)): 100pF Channel-to-Channel Matching (ΔRon): 10Ohm Multiplexer/Demultiplexer Circuit: 16:1 Voltage - Supply, Single (V+): 3V ~ 18V Supplier Device Package: 24-SOIC On-State Resistance (Max): 280Ohm Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Packaging: Bulk |
на замовлення 1908 шт: термін постачання 21-31 дні (днів) |
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| LB11970RV-W-AH | onsemi | Description: SINGLE PHASE MOTOR DRIVER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| LE25S20XATAG | onsemi |
Description: IC FLASH 2MBIT SPI 40MHZ 8WLCSP |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||
| SSV1MUN2211T1 | onsemi | Description: SSV1MUN2211T1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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MUN2211T3 | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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| mun2211jt1 | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 36000 шт: термін постачання 21-31 дні (днів) |
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MUN2211T1 | onsemi |
Description: TRANS BRT NPN 100MA 50V SC59Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 338 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
на замовлення 96997 шт: термін постачання 21-31 дні (днів) |
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| LA72730-N-E | onsemi |
Description: IC AUDIO/VIDEO SWITCH TV 24SDIP Packaging: Tube Features: I2C, ALC Output Package / Case: 24-SDIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -20°C ~ 70°C (TA) Applications: Audio, Video -3db Bandwidth: 10MHz Supplier Device Package: 24-SDIP Voltage - Supply, Single (V+): 4.5V ~ 5.5V Multiplexer/Demultiplexer Circuit: 5:1 Number of Channels: 3 |
на замовлення 151021 шт: термін постачання 21-31 дні (днів) |
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| 2SC5226-4-TL-E | onsemi |
Description: BIP NPN 70MA 10V FT=7G Packaging: Bulk Part Status: Active |
на замовлення 174000 шт: термін постачання 21-31 дні (днів) |
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| 2SC5226-5-TL-E | onsemi |
Description: BIP NPN 70MA 10V FT=7G Packaging: Bulk Part Status: Active |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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| 2SD1936T-SSH | onsemi |
Description: BIP NPN 0.8A 15V Packaging: Bulk Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| 2SC5966-CA |
на замовлення 5992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 226+ | 96.37 грн |
| NTLJS7D2P02P8ZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 7.9A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 23.55 грн |
| NTLJS7D2P02P8ZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Description: MOSFET P-CH 20V 7.9A 6PQFN
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
на замовлення 36114 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 102.91 грн |
| 10+ | 62.86 грн |
| 100+ | 41.64 грн |
| 500+ | 30.52 грн |
| 1000+ | 27.77 грн |
| NTLJS5D0N03CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Description: MOSFET N-CH 30V 11.2A 6PQFN
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 22.24 грн |
| 9000+ | 21.04 грн |
| NTLJS5D0N03CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11.2A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 35828 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.99 грн |
| 10+ | 48.34 грн |
| 100+ | 32.13 грн |
| 500+ | 24.94 грн |
| 1000+ | 23.36 грн |
| NTLJS3D0N02P8ZTAG |
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Виробник: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Description: MOSFET N-CH 20V 12.1A 6PQFN
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 23.88 грн |
| 6000+ | 21.32 грн |
| NTLJS3D0N02P8ZTAG |
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Виробник: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 12.1A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 7088 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 73.06 грн |
| 10+ | 47.51 грн |
| 100+ | 36.02 грн |
| 500+ | 27.97 грн |
| 1000+ | 24.26 грн |
| NTLJS17D0P03P8ZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 17.99 грн |
| NTLJS17D0P03P8ZTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 5086 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 72.27 грн |
| 10+ | 43.65 грн |
| 100+ | 28.56 грн |
| 500+ | 20.72 грн |
| 1000+ | 18.76 грн |
| NVTFWS014P04M8LTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVTFWS014P04M8LTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
на замовлення 547 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 86.41 грн |
| 10+ | 54.54 грн |
| 100+ | 41.36 грн |
| 500+ | 30.62 грн |
| NVTFWS9D6P04M8LTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 33.39 грн |
| 3000+ | 31.89 грн |
| 4500+ | 30.78 грн |
| 7500+ | 27.98 грн |
| NVTFWS9D6P04M8LTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
на замовлення 9090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 110.76 грн |
| 10+ | 71.03 грн |
| 100+ | 48.66 грн |
| 500+ | 37.31 грн |
| NVMFS5C628NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVMFS5C628NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
на замовлення 670 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 242.74 грн |
| 10+ | 156.74 грн |
| 100+ | 111.82 грн |
| 500+ | 88.39 грн |
| NXV04V120DB1 |
![]() |
Виробник: onsemi
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 2108.44 грн |
| 44+ | 1266.01 грн |
| NC7S04M5-ON |
![]() |
Виробник: onsemi
Description: INVERTER, HC/UH SERIES, 1 FUNC,
Description: INVERTER, HC/UH SERIES, 1 FUNC,
товару немає в наявності
В кошику
од. на суму грн.
| LA6358NSLL-E |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 9SIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 9-SIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 9-SIP
Packaging: Bulk
Description: IC OPAMP GP 2 CIRCUIT 9SIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 9-SIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 9-SIP
Packaging: Bulk
на замовлення 18024 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2664+ | 8.27 грн |
| LA6358NLL-E |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
на замовлення 43543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2049+ | 11.28 грн |
| LA6358NL-E |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
на замовлення 18180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2049+ | 11.28 грн |
| LA6358N-E |
![]() |
Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
на замовлення 576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 346+ | 65.43 грн |
| SNRVUD620CTT4G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 200V 3A DPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 16.94 грн |
| 5000+ | 15.15 грн |
| SNRVUD620CTT4G |
![]() |
Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Description: DIODE ARRAY GP 200V 3A DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
на замовлення 5879 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.20 грн |
| 10+ | 37.75 грн |
| 100+ | 30.14 грн |
| 500+ | 21.55 грн |
| 1000+ | 18.01 грн |
| NRVUB1620CTT4G |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
Description: DIODE GEN PURP 200V 8A D2PAK-3
товару немає в наявності
В кошику
од. на суму грн.
| NRVUB1620CTT4G |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
Description: DIODE GEN PURP 200V 8A D2PAK-3
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 193.25 грн |
| 10+ | 167.71 грн |
| 100+ | 134.82 грн |
| NRVTS8100PFST3G |
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Виробник: onsemi
Description: DIODE SCHOTTKY 100V 8A TO2773
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Description: DIODE SCHOTTKY 100V 8A TO2773
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 20.47 грн |
| XCY99008BR2 |
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1025+ | 21.24 грн |
| CS51021ED16 |
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на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 386+ | 57.14 грн |
| LV52206XA-TSD |
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 466+ | 43.10 грн |
| LC75844MHS-MPB-E |
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Виробник: onsemi
Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
на замовлення 1523 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 124+ | 160.90 грн |
| MJE18002 |
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Виробник: onsemi
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4437 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 841+ | 24.30 грн |
| MJE18002G |
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Виробник: onsemi
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 65841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 420+ | 47.93 грн |
| SZMMBZ5226BLT1G |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 225MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 3.3V 225MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 16320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.14 грн |
| 33+ | 9.38 грн |
| 100+ | 5.05 грн |
| 500+ | 3.72 грн |
| 1000+ | 2.58 грн |
| MC10H115FNR2G |
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Виробник: onsemi
Description: IC RECEIVER 0/4 20PLCC
Description: IC RECEIVER 0/4 20PLCC
на замовлення 5737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 128+ | 180.99 грн |
| MC10H115FNR2 |
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Виробник: onsemi
Description: IC RECEIVER 0/4 20PLCC
Description: IC RECEIVER 0/4 20PLCC
на замовлення 4217 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 128+ | 180.99 грн |
| SB0030-04A-AT1 |
на замовлення 705000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6662+ | 3.65 грн |
| SB0030-04A |
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на замовлення 108292 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5323+ | 4.38 грн |
| H11G46 |
Виробник: onsemi
Description: PHOTO DARLINGTON OPTOISOLATOR
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Min): 350% @ 500µA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 60mA
Input Type: DC
Mounting Type: Through Hole
Output Type: Darlington with Base
Description: PHOTO DARLINGTON OPTOISOLATOR
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Part Status: Obsolete
Voltage - Output (Max): 55V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Min): 350% @ 500µA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 60mA
Input Type: DC
Mounting Type: Through Hole
Output Type: Darlington with Base
товару немає в наявності
В кошику
од. на суму грн.
| NL17SZ125DFT2 |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC88A
Description: IC BUFFER NON-INVERT 5.5V SC88A
на замовлення 73632 шт:
термін постачання 21-31 дні (днів)
| CS3524AGN16 |
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на замовлення 27748 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 478+ | 41.77 грн |
| CS3524AGDWR16 |
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на замовлення 28338 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 319+ | 62.33 грн |
| CS3524AGDW16 |
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на замовлення 235 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 150+ | 132.62 грн |
| NCP1218AD65R2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Part Status: Obsolete
Voltage - Start Up: 12.7 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 9.9V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Bulk
Description: IC OFFLINE SWITCH FLYBACK 7SOIC
Part Status: Obsolete
Voltage - Start Up: 12.7 V
Fault Protection: Over Load, Over Temperature, Over Voltage
Supplier Device Package: 7-SOIC
Voltage - Supply (Vcc/Vdd): 9.9V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Packaging: Bulk
на замовлення 28137 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 519+ | 39.35 грн |
| NCP1217AD65R2 |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Duty Cycle: 46.5%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 12.8 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 150°C (TJ)
Duty Cycle: 46.5%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.6V ~ 16V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Temperature, Short Circuit
Voltage - Start Up: 12.8 V
Part Status: Obsolete
на замовлення 6776 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 761+ | 29.21 грн |
| NCP1249AD65R2G |
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Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 9SOIC
Packaging: Bulk
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 9-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 9SOIC
Packaging: Bulk
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 30V
Supplier Device Package: 9-SOIC
Fault Protection: Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 18 V
Part Status: Obsolete
на замовлення 16682 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 701+ | 32.34 грн |
| MPS2369RLRA |
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Виробник: onsemi
Description: TRANS NPN 15V 0.2A TO92
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Packaging: Bulk
Description: TRANS NPN 15V 0.2A TO92
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Current - Collector Cutoff (Max): 400nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Packaging: Bulk
на замовлення 20588 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6662+ | 3.53 грн |
| NLV14099BDWR2G |
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Виробник: onsemi
Description: IC LATCH 8BIT 16SOIC
Delay Time - Propagation: 50ns
Current - Output High, Low: 8.8mA, 8.8mA
Independent Circuits: 1
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 4:4
Mounting Type: Surface Mount
Output Type: Standard
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 16-SOIC
Description: IC LATCH 8BIT 16SOIC
Delay Time - Propagation: 50ns
Current - Output High, Low: 8.8mA, 8.8mA
Independent Circuits: 1
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 4:4
Mounting Type: Surface Mount
Output Type: Standard
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: 16-SOIC
на замовлення 26241 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 503+ | 43.95 грн |
| NLV14067BDWR2G |
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Виробник: onsemi
Description: IC MUX 16:1 280OHM 24SOIC
Qualification: AEC-Q100
Number of Circuits: 1
Grade: Automotive
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 100pF
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Voltage - Supply, Single (V+): 3V ~ 18V
Supplier Device Package: 24-SOIC
On-State Resistance (Max): 280Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Description: IC MUX 16:1 280OHM 24SOIC
Qualification: AEC-Q100
Number of Circuits: 1
Grade: Automotive
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 100pF
Channel-to-Channel Matching (ΔRon): 10Ohm
Multiplexer/Demultiplexer Circuit: 16:1
Voltage - Supply, Single (V+): 3V ~ 18V
Supplier Device Package: 24-SOIC
On-State Resistance (Max): 280Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
на замовлення 1908 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 263+ | 77.35 грн |
| LB11970RV-W-AH |
Виробник: onsemi
Description: SINGLE PHASE MOTOR DRIVER
Description: SINGLE PHASE MOTOR DRIVER
товару немає в наявності
В кошику
од. на суму грн.
| LE25S20XATAG |
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Виробник: onsemi
Description: IC FLASH 2MBIT SPI 40MHZ 8WLCSP
Description: IC FLASH 2MBIT SPI 40MHZ 8WLCSP
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SSV1MUN2211T1 |
Виробник: onsemi
Description: SSV1MUN2211T1
Description: SSV1MUN2211T1
товару немає в наявності
В кошику
од. на суму грн.
| MUN2211T3 |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7869+ | 2.67 грн |
| mun2211jt1 |
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7869+ | 2.67 грн |
| MUN2211T1 |
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Виробник: onsemi
Description: TRANS BRT NPN 100MA 50V SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS BRT NPN 100MA 50V SC59
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 338 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
на замовлення 96997 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3620+ | 5.34 грн |
| LA72730-N-E |
Виробник: onsemi
Description: IC AUDIO/VIDEO SWITCH TV 24SDIP
Packaging: Tube
Features: I2C, ALC Output
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 70°C (TA)
Applications: Audio, Video
-3db Bandwidth: 10MHz
Supplier Device Package: 24-SDIP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 5:1
Number of Channels: 3
Description: IC AUDIO/VIDEO SWITCH TV 24SDIP
Packaging: Tube
Features: I2C, ALC Output
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 70°C (TA)
Applications: Audio, Video
-3db Bandwidth: 10MHz
Supplier Device Package: 24-SDIP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 5:1
Number of Channels: 3
на замовлення 151021 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 413+ | 49.11 грн |
| 2SC5226-4-TL-E |
на замовлення 174000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1665+ | 13.24 грн |
| 2SC5226-5-TL-E |
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1665+ | 12.70 грн |
| 2SD1936T-SSH |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6000+ | 4.40 грн |
























