| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| LB1929-E | onsemi |
Description: IC MOTOR DRIVER 9.5V-28V 28HDIP Packaging: Tube Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 3.5A Interface: Parallel Operating Temperature: -20°C ~ 80°C (TA) Output Configuration: Half Bridge (3) Voltage - Supply: 9.5V ~ 28V Applications: General Purpose Technology: Bipolar Voltage - Load: 9.5V ~ 28V Supplier Device Package: 28-HDIP Motor Type - AC, DC: Brushless DC (BLDC) |
на замовлення 16218 шт: термін постачання 21-31 дні (днів) |
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LV8772-E | onsemi |
Description: IC MTR DRV BIPOLAR 0-5.5V 28HDIPPart Status: Obsolete Step Resolution: 1, 1/2, 1/4, 1/16 Motor Type - Stepper: Bipolar Supplier Device Package: 28-HDIP Voltage - Load: 9V ~ 32V Technology: BiCDMOS Applications: General Purpose Voltage - Supply: 0V ~ 5.5V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 85°C (TA) Interface: Parallel Current - Output: 2.5A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Through Hole Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad Packaging: Bulk |
на замовлення 3087 шт: термін постачання 21-31 дні (днів) |
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2SC4081RT1 | onsemi |
Description: TRANS NPN 50V 0.1A SC70-3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: SC-70-3 (SOT323) DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk |
на замовлення 118974 шт: термін постачання 21-31 дні (днів) |
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SZMM3Z18VT1G | onsemi |
Description: DIODE ZENER 18V 300MW SOD323Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SZMM3Z18VT1G | onsemi |
Description: DIODE ZENER 18V 300MW SOD323Packaging: Cut Tape (CT) Tolerance: ±6% Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2258 шт: термін постачання 21-31 дні (днів) |
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CAT25320VE-GC | onsemi |
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOICMemory Organization: 4K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Part Status: Active Supplier Device Package: 8-SOIC Memory Format: EEPROM Clock Frequency: 10 MHz Technology: EEPROM Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 1300 шт: термін постачання 21-31 дні (днів) |
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2SC6024-TL-E | onsemi |
Description: RF TRANS NPN 3.5V 14GHZ 3-SSFPPackaging: Bulk Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Gain: 9dB ~ 10.5dB Power - Max: 120mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 3.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.2dB @ 2GHz Supplier Device Package: 3-SSFP |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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| 2SC6044-TD-E | onsemi |
Description: TRANS NPN 30V 2A PCPPower - Max: 1.3 W Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 2 A Supplier Device Package: PCP Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 260mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-243AA Packaging: Bulk |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
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| 2SC6089-CA | onsemi |
Description: BIP NPN 10A 700V Packaging: Bulk |
на замовлення 15390 шт: термін постачання 21-31 дні (днів) |
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2SC6091 | onsemi |
Description: TRANS NPN 700V 8A TO-3PMLHSupplier Device Package: TO-3PMLH Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 4.5A Power - Max: 3 W Voltage - Collector Emitter Breakdown (Max): 700 V Current - Collector (Ic) (Max): 8 A DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Current - Collector Cutoff (Max): 10mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Bulk |
на замовлення 88985 шт: термін постачання 21-31 дні (днів) |
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| 2SC6014-TD-E | onsemi |
Description: BIP NPN 5A 30V Packaging: Bulk |
на замовлення 22000 шт: термін постачання 21-31 дні (днів) |
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NTMFD5C470NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 11A/36A 8DFNPart Status: Active Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3W (Ta), 24W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 5713 шт: термін постачання 21-31 дні (днів) |
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NTMFD5C446NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 25A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3.5W (Ta), 125W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NTMFD5C446NLT1G | onsemi |
Description: MOSFET 2N-CH 40V 25A 8DFNSupplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 3.5W (Ta), 125W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 728 шт: термін постачання 21-31 дні (днів) |
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NLV17SZ126DFT2G | onsemi |
Description: IC BUFFER NON-INVERT 5.5V SC88ASupplier Device Package: SC-88A (SC-70-5/SOT-353) Current - Output High, Low: 32mA, 32mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DTA143TXV3T1 | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANSISTORPackaging: Bulk |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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MC7809CTG | onsemi |
Description: IC REG LINEAR 9V 1A TO220Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220 Voltage - Output (Min/Fixed): 9V Part Status: Active PSRR: 61dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
на замовлення 1605 шт: термін постачання 21-31 дні (днів) |
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SN74LS30DR2 | onsemi |
Description: IC GATE NANDPackaging: Bulk Part Status: Active |
на замовлення 57500 шт: термін постачання 21-31 дні (днів) |
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SN74LS30MEL | onsemi |
Description: 8 INPUT POSITIVE NAND GATE Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74VHC139M | onsemi |
Description: DECODER/DRIVER, AHC/VHC SERIESPackaging: Bulk |
на замовлення 5650 шт: термін постачання 21-31 дні (днів) |
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MC74VHC139DTR2 | onsemi |
Description: IC DECODER/DEMUX 1X2:4 16-TSSOPSupplier Device Package: 16-TSSOP Voltage Supply Source: Single Supply Current - Output High, Low: 8mA, 8mA Independent Circuits: 2 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Decoder/Demultiplexer Circuit: 1 x 2:4 Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MC74VHC139D | onsemi |
Description: DECODER/DRIVER, AHC/VHC SERIESPackaging: Bulk |
на замовлення 14160 шт: термін постачання 21-31 дні (днів) |
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MC74VHC139DT | onsemi |
Description: IC DECODER/DEMUX 1X2:4 16-TSSOPSupplier Device Package: 16-TSSOP Voltage Supply Source: Single Supply Current - Output High, Low: 8mA, 8mA Independent Circuits: 2 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Decoder/Demultiplexer Circuit: 1 x 2:4 Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
на замовлення 10075 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C650NLWFT1G | onsemi |
Description: MOSFET 2N-CH 60V 21A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 125W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 98µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C650NLWFT1G | onsemi |
Description: MOSFET 2N-CH 60V 21A 8DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Ta), 125W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 98µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1929 шт: термін постачання 21-31 дні (днів) |
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| 2SC5966-CA | onsemi |
Description: BIP NPN 20A 800V Packaging: Bulk Part Status: Active |
на замовлення 5992 шт: термін постачання 21-31 дні (днів) |
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NTLJS7D2P02P8ZTAG | onsemi |
Description: MOSFET P-CH 20V 7.9A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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NTLJS7D2P02P8ZTAG | onsemi |
Description: MOSFET P-CH 20V 7.9A 6PQFNGate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V |
на замовлення 36114 шт: термін постачання 21-31 дні (днів) |
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NTLJS5D0N03CTAG | onsemi |
Description: MOSFET N-CH 30V 11.2A 6PQFNPower Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.2V @ 250µA |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NTLJS5D0N03CTAG | onsemi |
Description: MOSFET N-CH 30V 11.2A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 35828 шт: термін постачання 21-31 дні (днів) |
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NTLJS3D0N02P8ZTAG | onsemi |
Description: MOSFET N-CH 20V 12.1A 6PQFNCurrent - Continuous Drain (Id) @ 25°C: 12.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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NTLJS3D0N02P8ZTAG | onsemi |
Description: MOSFET N-CH 20V 12.1A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 7088 шт: термін постачання 21-31 дні (днів) |
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NTLJS17D0P03P8ZTAG | onsemi |
Description: MOSFET P-CH 30V 7A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTLJS17D0P03P8ZTAG | onsemi |
Description: MOSFET P-CH 30V 7A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 5086 шт: термін постачання 21-31 дні (днів) |
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NVTFWS014P04M8LTAG | onsemi |
Description: MOSFET P-CH 40V 11.3A/49A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVTFWS014P04M8LTAG | onsemi |
Description: MOSFET P-CH 40V 11.3A/49A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 547 шт: термін постачання 21-31 дні (днів) |
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NVTFWS9D6P04M8LTAG | onsemi |
Description: MOSFET P-CH 40V 13A/64A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NVTFWS9D6P04M8LTAG | onsemi |
Description: MOSFET P-CH 40V 13A/64A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 580µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 9090 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C628NWFT1G | onsemi |
Description: MOSFET N-CH 60V 28A/150A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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NVMFS5C628NWFT1G | onsemi |
Description: MOSFET N-CH 60V 28A/150A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 596 шт: термін постачання 21-31 дні (днів) |
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NXV04V120DB1 | onsemi |
Description: 3-PHASE INVERTER AUTOMOTIPackaging: Tube Package / Case: 19-PowerDIP Module (1.480", 37.60mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Grade: Automotive Current: 160 A Voltage: 40 V |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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NC7S04M5-ON | onsemi |
Description: INVERTER, HC/UH SERIES, 1 FUNC, |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| LA6358NSLL-E | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 9SIPVoltage - Supply Span (Max): 30 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 9-SIP Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA Operating Temperature: -30°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 9-SIP Packaging: Bulk |
на замовлення 18024 шт: термін постачання 21-31 дні (днів) |
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LA6358NLL-E | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8DIPVoltage - Supply Span (Max): 30 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-DIP Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA Operating Temperature: -30°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk |
на замовлення 43543 шт: термін постачання 21-31 дні (днів) |
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LA6358NL-E | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8DIPSupplier Device Package: 8-DIP Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA Operating Temperature: -30°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk Voltage - Supply Span (Max): 30 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 2 Part Status: Active |
на замовлення 18180 шт: термін постачання 21-31 дні (днів) |
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LA6358N-E | onsemi |
Description: IC OPAMP GP 2 CIRCUIT 8DIPOperating Temperature: -30°C ~ 85°C Amplifier Type: General Purpose Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk Voltage - Supply Span (Max): 30 V Voltage - Supply Span (Min): 3 V Current - Output / Channel: 40 mA Number of Circuits: 2 Part Status: Active Supplier Device Package: 8-DIP Voltage - Input Offset: 2 mV Current - Input Bias: 45 nA |
на замовлення 576 шт: термін постачання 21-31 дні (днів) |
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SNRVUD620CTT4G | onsemi |
Description: DIODE ARRAY GP 200V 3A DPAKQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SNRVUD620CTT4G | onsemi |
Description: DIODE ARRAY GP 200V 3A DPAKCurrent - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DPAK |
на замовлення 5879 шт: термін постачання 21-31 дні (днів) |
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NRVUB1620CTT4G | onsemi |
Description: DIODE GEN PURP 200V 8A D2PAK-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NRVUB1620CTT4G | onsemi |
Description: DIODE GEN PURP 200V 8A D2PAK-3 |
на замовлення 226 шт: термін постачання 21-31 дні (днів) |
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| XCY99008BR2 | onsemi |
Description: PWM CURRENT-MODE CONTROLLER Packaging: Bulk |
на замовлення 35000 шт: термін постачання 21-31 дні (днів) |
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CS51021ED16 | onsemi |
Description: CURRENT MODE PWM CONTROLLER 1APart Status: Active Packaging: Bulk |
на замовлення 1728 шт: термін постачання 21-31 дні (днів) |
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| LV52206XA-TSD | onsemi |
Description: SEU - MOBILE DRIVER, 33048080 Packaging: Bulk Part Status: Active |
на замовлення 95000 шт: термін постачання 21-31 дні (днів) |
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| 2SC2344E | onsemi |
Description: POWER BIPOLAR TRANSISTOR NPN Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LC75844MHS-MPB-E | onsemi |
Description: IC DRVR 88 SEGMENT 36MFPSDJPackaging: Tube Package / Case: 36-SOP (0.311", 7.90mm Width) Display Type: LCD Mounting Type: Surface Mount Interface: Serial Configuration: 88 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 6V Supplier Device Package: 36-MFPSDJ Part Status: Obsolete Current - Supply: 230 µA |
на замовлення 1523 шт: термін постачання 21-31 дні (днів) |
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MJE18002 | onsemi |
Description: TRANS NPN 450V 2A TO-220Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 450 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: TO-220 Frequency - Transition: 13MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 4437 шт: термін постачання 21-31 дні (днів) |
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MJE18002G | onsemi |
Description: TRANS NPN 450V 2A TO-220Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 450 V Current - Collector (Ic) (Max): 2 A Part Status: Obsolete Supplier Device Package: TO-220 Frequency - Transition: 13MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 65841 шт: термін постачання 21-31 дні (днів) |
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SZMMBZ5226BLT1G | onsemi |
Description: DIODE ZENER 3.3V 225MW SOT23-3Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 25 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 225 mW Supplier Device Package: SOT-23-3 (TO-236) Impedance (Max) (Zzt): 28 Ohms Voltage - Zener (Nom) (Vz): 3.3 V Operating Temperature: -65°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 16320 шт: термін постачання 21-31 дні (днів) |
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MC10H115FNR2G | onsemi |
Description: IC RECEIVER 0/4 20PLCC |
на замовлення 5737 шт: термін постачання 21-31 дні (днів) |
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MC10H115FNR2 | onsemi |
Description: IC RECEIVER 0/4 20PLCC |
на замовлення 4217 шт: термін постачання 21-31 дні (днів) |
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| LB1929-E |
Виробник: onsemi
Description: IC MOTOR DRIVER 9.5V-28V 28HDIP
Packaging: Tube
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Interface: Parallel
Operating Temperature: -20°C ~ 80°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 9.5V ~ 28V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 9.5V ~ 28V
Supplier Device Package: 28-HDIP
Motor Type - AC, DC: Brushless DC (BLDC)
Description: IC MOTOR DRIVER 9.5V-28V 28HDIP
Packaging: Tube
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 3.5A
Interface: Parallel
Operating Temperature: -20°C ~ 80°C (TA)
Output Configuration: Half Bridge (3)
Voltage - Supply: 9.5V ~ 28V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 9.5V ~ 28V
Supplier Device Package: 28-HDIP
Motor Type - AC, DC: Brushless DC (BLDC)
на замовлення 16218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 292.00 грн |
| LV8772-E |
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Виробник: onsemi
Description: IC MTR DRV BIPOLAR 0-5.5V 28HDIP
Part Status: Obsolete
Step Resolution: 1, 1/2, 1/4, 1/16
Motor Type - Stepper: Bipolar
Supplier Device Package: 28-HDIP
Voltage - Load: 9V ~ 32V
Technology: BiCDMOS
Applications: General Purpose
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 2.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Packaging: Bulk
Description: IC MTR DRV BIPOLAR 0-5.5V 28HDIP
Part Status: Obsolete
Step Resolution: 1, 1/2, 1/4, 1/16
Motor Type - Stepper: Bipolar
Supplier Device Package: 28-HDIP
Voltage - Load: 9V ~ 32V
Technology: BiCDMOS
Applications: General Purpose
Voltage - Supply: 0V ~ 5.5V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 2.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 28-SDIP (0.500", 12.70mm) Exposed Pad
Packaging: Bulk
на замовлення 3087 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 54+ | 376.90 грн |
| 2SC4081RT1 |
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Виробник: onsemi
Description: TRANS NPN 50V 0.1A SC70-3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Description: TRANS NPN 50V 0.1A SC70-3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
на замовлення 118974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7869+ | 2.66 грн |
| SZMM3Z18VT1G |
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Виробник: onsemi
Description: DIODE ZENER 18V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 18V 300MW SOD323
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SZMM3Z18VT1G |
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Виробник: onsemi
Description: DIODE ZENER 18V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 18V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2258 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 19.42 грн |
| 27+ | 11.44 грн |
| 100+ | 7.16 грн |
| 500+ | 4.94 грн |
| 1000+ | 4.36 грн |
| CAT25320VE-GC |
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Виробник: onsemi
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 10 MHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 533+ | 40.16 грн |
| 2SC6024-TL-E |
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Виробник: onsemi
Description: RF TRANS NPN 3.5V 14GHZ 3-SSFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 9dB ~ 10.5dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: 3-SSFP
Description: RF TRANS NPN 3.5V 14GHZ 3-SSFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 9dB ~ 10.5dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: 3-SSFP
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2597+ | 7.98 грн |
| 2SC6044-TD-E |
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Виробник: onsemi
Description: TRANS NPN 30V 2A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: PCP
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Description: TRANS NPN 30V 2A PCP
Power - Max: 1.3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: PCP
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1817+ | 11.40 грн |
| 2SC6089-CA |
на замовлення 15390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 271+ | 74.46 грн |
| 2SC6091 |
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Виробник: onsemi
Description: TRANS NPN 700V 8A TO-3PMLH
Supplier Device Package: TO-3PMLH
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 4.5A
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 700 V
Current - Collector (Ic) (Max): 8 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector Cutoff (Max): 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Description: TRANS NPN 700V 8A TO-3PMLH
Supplier Device Package: TO-3PMLH
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 4.5A
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 700 V
Current - Collector (Ic) (Max): 8 A
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector Cutoff (Max): 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
на замовлення 88985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 329+ | 65.19 грн |
| 2SC6014-TD-E |
на замовлення 22000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 26+ | 818.51 грн |
| NTMFD5C470NLT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 24W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3W (Ta), 24W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 5713 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.36 грн |
| 10+ | 165.50 грн |
| 100+ | 131.77 грн |
| 500+ | 104.63 грн |
| NTMFD5C446NLT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.5W (Ta), 125W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 40V 25A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.5W (Ta), 125W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NTMFD5C446NLT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.5W (Ta), 125W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 25A 8DFN
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 3.5W (Ta), 125W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.22 грн |
| 10+ | 140.82 грн |
| 100+ | 97.42 грн |
| 500+ | 74.01 грн |
| NLV17SZ126DFT2G |
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Виробник: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC88A
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V SC88A
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Current - Output High, Low: 32mA, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.19 грн |
| 6000+ | 16.87 грн |
| DTA143TXV3T1 |
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на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6662+ | 3.88 грн |
| MC7809CTG |
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Виробник: onsemi
Description: IC REG LINEAR 9V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 9V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
на замовлення 1605 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 38.83 грн |
| 12+ | 26.25 грн |
| 50+ | 21.81 грн |
| 100+ | 19.17 грн |
| 250+ | 17.82 грн |
| 500+ | 17.01 грн |
| 1000+ | 16.07 грн |
| SN74LS30DR2 |
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на замовлення 57500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4438+ | 5.18 грн |
| MC74VHC139M |
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на замовлення 5650 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2597+ | 7.99 грн |
| MC74VHC139DTR2 |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 2:4
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 2:4
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2427+ | 8.19 грн |
| MC74VHC139D |
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на замовлення 14160 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1817+ | 11.32 грн |
| MC74VHC139DT |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 2:4
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Supplier Device Package: 16-TSSOP
Voltage Supply Source: Single Supply
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 2
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Decoder/Demultiplexer
Circuit: 1 x 2:4
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
на замовлення 10075 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2184+ | 9.56 грн |
| NVMFD5C650NLWFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 150.04 грн |
| NVMFD5C650NLWFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1929 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 389.87 грн |
| 10+ | 250.76 грн |
| 100+ | 180.31 грн |
| 500+ | 165.96 грн |
| 2SC5966-CA |
на замовлення 5992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 226+ | 95.28 грн |
| NTLJS7D2P02P8ZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 7.9A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.28 грн |
| NTLJS7D2P02P8ZTAG |
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Виробник: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
Description: MOSFET P-CH 20V 7.9A 6PQFN
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
на замовлення 36114 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.74 грн |
| 10+ | 62.15 грн |
| 100+ | 41.16 грн |
| 500+ | 30.18 грн |
| 1000+ | 27.45 грн |
| NTLJS5D0N03CTAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Description: MOSFET N-CH 30V 11.2A 6PQFN
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 21.99 грн |
| 9000+ | 20.80 грн |
| NTLJS5D0N03CTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 11.2A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 35828 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.24 грн |
| 10+ | 47.79 грн |
| 100+ | 31.77 грн |
| 500+ | 24.65 грн |
| 1000+ | 23.09 грн |
| NTLJS3D0N02P8ZTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Description: MOSFET N-CH 20V 12.1A 6PQFN
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 23.60 грн |
| 6000+ | 21.08 грн |
| NTLJS3D0N02P8ZTAG |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 12.1A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 7088 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.23 грн |
| 10+ | 46.97 грн |
| 100+ | 35.61 грн |
| 500+ | 27.65 грн |
| 1000+ | 23.98 грн |
| NTLJS17D0P03P8ZTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 17.79 грн |
| NTLJS17D0P03P8ZTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 7A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 5086 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 71.45 грн |
| 10+ | 43.15 грн |
| 100+ | 28.24 грн |
| 500+ | 20.48 грн |
| 1000+ | 18.54 грн |
| NVTFWS014P04M8LTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVTFWS014P04M8LTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
на замовлення 547 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.43 грн |
| 10+ | 53.92 грн |
| 100+ | 40.89 грн |
| 500+ | 30.27 грн |
| NVTFWS9D6P04M8LTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 33.02 грн |
| 3000+ | 31.53 грн |
| 4500+ | 30.43 грн |
| 7500+ | 27.66 грн |
| NVTFWS9D6P04M8LTAG |
![]() |
Виробник: onsemi
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
на замовлення 9090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.51 грн |
| 10+ | 70.22 грн |
| 100+ | 48.11 грн |
| 500+ | 36.89 грн |
| NVMFS5C628NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| NVMFS5C628NWFT1G |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Qualification: AEC-Q101
на замовлення 596 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.84 грн |
| 10+ | 161.91 грн |
| 100+ | 113.14 грн |
| 500+ | 86.84 грн |
| NXV04V120DB1 |
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Виробник: onsemi
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2084.48 грн |
| 44+ | 1251.63 грн |
| NC7S04M5-ON |
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Виробник: onsemi
Description: INVERTER, HC/UH SERIES, 1 FUNC,
Description: INVERTER, HC/UH SERIES, 1 FUNC,
товару немає в наявності
В кошику
од. на суму грн.
| LA6358NSLL-E |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 9SIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 9-SIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 9-SIP
Packaging: Bulk
Description: IC OPAMP GP 2 CIRCUIT 9SIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 9-SIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 9-SIP
Packaging: Bulk
на замовлення 18024 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2664+ | 8.18 грн |
| LA6358NLL-E |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
на замовлення 43543 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2049+ | 11.15 грн |
| LA6358NL-E |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
на замовлення 18180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2049+ | 11.15 грн |
| LA6358N-E |
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Виробник: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Operating Temperature: -30°C ~ 85°C
Amplifier Type: General Purpose
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 2
Part Status: Active
Supplier Device Package: 8-DIP
Voltage - Input Offset: 2 mV
Current - Input Bias: 45 nA
на замовлення 576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 346+ | 64.68 грн |
| SNRVUD620CTT4G |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 200V 3A DPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.75 грн |
| 5000+ | 14.97 грн |
| SNRVUD620CTT4G |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
Description: DIODE ARRAY GP 200V 3A DPAK
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DPAK
на замовлення 5879 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.59 грн |
| 10+ | 37.32 грн |
| 100+ | 29.80 грн |
| 500+ | 21.30 грн |
| 1000+ | 17.80 грн |
| NRVUB1620CTT4G |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
Description: DIODE GEN PURP 200V 8A D2PAK-3
товару немає в наявності
В кошику
од. на суму грн.
| NRVUB1620CTT4G |
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Виробник: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
Description: DIODE GEN PURP 200V 8A D2PAK-3
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.05 грн |
| 10+ | 165.80 грн |
| 100+ | 133.29 грн |
| XCY99008BR2 |
на замовлення 35000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1025+ | 21.00 грн |
| CS51021ED16 |
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на замовлення 1728 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 386+ | 56.49 грн |
| LV52206XA-TSD |
на замовлення 95000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 466+ | 42.61 грн |
| LC75844MHS-MPB-E |
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Виробник: onsemi
Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
на замовлення 1523 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 124+ | 164.05 грн |
| MJE18002 |
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Виробник: onsemi
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 4437 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 841+ | 24.03 грн |
| MJE18002G |
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Виробник: onsemi
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 65841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 420+ | 47.38 грн |
| SZMMBZ5226BLT1G |
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Виробник: onsemi
Description: DIODE ZENER 3.3V 225MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 3.3V 225MW SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 225 mW
Supplier Device Package: SOT-23-3 (TO-236)
Impedance (Max) (Zzt): 28 Ohms
Voltage - Zener (Nom) (Vz): 3.3 V
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 16320 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 13.98 грн |
| 33+ | 9.27 грн |
| 100+ | 4.99 грн |
| 500+ | 3.68 грн |
| 1000+ | 2.55 грн |
| MC10H115FNR2G |
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Виробник: onsemi
Description: IC RECEIVER 0/4 20PLCC
Description: IC RECEIVER 0/4 20PLCC
на замовлення 5737 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 128+ | 178.93 грн |
| MC10H115FNR2 |
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Виробник: onsemi
Description: IC RECEIVER 0/4 20PLCC
Description: IC RECEIVER 0/4 20PLCC
на замовлення 4217 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 128+ | 178.93 грн |




























