| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MC74AC11D | onsemi |
Description: IC GATE AND 3CH 3-INP 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF Number of Circuits: 3 Current - Quiescent (Max): 4 µA |
на замовлення 12810 шт: термін постачання 21-31 дні (днів) |
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MC74AC11DR2 | onsemi |
Description: IC GATE AND 3CH 3-INP 14-SOICPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF Number of Circuits: 3 Current - Quiescent (Max): 4 µA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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MC74AC11N | onsemi |
Description: IC GATE AND 3CH 3-INP 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 3 Supplier Device Package: 14-PDIP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF Number of Circuits: 3 Current - Quiescent (Max): 4 µA |
на замовлення 4525 шт: термін постачання 21-31 дні (днів) |
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BAW56WT1H | onsemi |
Description: DIODE ARRAY GP 70V 200MA SC70-3Packaging: Bulk Part Status: Active Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 366000 шт: термін постачання 21-31 дні (днів) |
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BAW56WT1 | onsemi |
Description: DIODE ARRAY GP 70V 200MA SC70-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
на замовлення 289686 шт: термін постачання 21-31 дні (днів) |
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SCH1406-TL-E-ON | onsemi |
Description: MOSFET N-CH Packaging: Bulk |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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SCH1419-TL-E | onsemi |
Description: NCH 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 330000 шт: термін постачання 21-31 дні (днів) |
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SCH1402-S-TL-E | onsemi |
Description: MOSFET N-CH Packaging: Bulk |
на замовлення 310000 шт: термін постачання 21-31 дні (днів) |
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SCH1436-TL-W | onsemi |
Description: MOSFET N-CH 30V 1.8A SOT563/SCH6Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-563/SCH6 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V |
на замовлення 19995 шт: термін постачання 21-31 дні (днів) |
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SCH1436-TL-H | onsemi |
Description: MOSFET N-CH 30V 1.8A 6SCHPackaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V |
на замовлення 3222975 шт: термін постачання 21-31 дні (днів) |
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SCH1435-TL-W | onsemi |
Description: MOSFET N-CH 30V 3A 6SCH Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 10 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SCH1433-TL-W | onsemi |
Description: MOSFET N-CH 20V 3.5A SOT563/SCH6Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: SOT-563/SCH6 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SCH1434-TL-H | onsemi |
Description: MOSFET N-CH 30V 2A 6SCH Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SCH1433-TL-H | onsemi |
Description: MOSFET N-CH 20V 3.5A 6SCHPackaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V |
на замовлення 594000 шт: термін постачання 21-31 дні (днів) |
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SCH1439-TL-H | onsemi |
Description: MOSFET N-CH 30V 3.5A 6SCHPackaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V Power Dissipation (Max): 1W (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
на замовлення 159639 шт: термін постачання 21-31 дні (днів) |
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SCH1435-TL-H | onsemi |
Description: SMALL SIGNAL N-CHANNEL MOSFETPackaging: Bulk |
на замовлення 34780 шт: термін постачання 21-31 дні (днів) |
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SCH1439-TL-W | onsemi |
Description: MOSFET N-CH 30V 3.5A SOT563/SCH6Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-563/SCH6 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V |
на замовлення 19895 шт: термін постачання 21-31 дні (днів) |
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SCH1433-S-TL-H | onsemi |
Description: MOSFET N-CH 20V 3.5A SCH6 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 3.5A (Tj) Supplier Device Package: 6-SCH |
на замовлення 200000 шт: термін постачання 21-31 дні (днів) |
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SCH1402-TL-E | onsemi |
Description: NCH 1.8V DRIVE SERIES Packaging: Bulk |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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MMSF4N01HDR2 | onsemi |
Description: SMALL SIGNAL N-CHANNEL MOSFETPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V |
на замовлення 105281 шт: термін постачання 21-31 дні (днів) |
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NTMS4N01R2 | onsemi |
Description: MOSFET PWR N-CHAN 4.2A 20V 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Power Dissipation (Max): 770mW (Ta) Supplier Device Package: 8-SOIC Vgs (Max): ±10V |
на замовлення 17191 шт: термін постачання 21-31 дні (днів) |
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NTMS4N01R2G | onsemi |
Description: MOSFET N-CH 20V 3.3A 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V |
на замовлення 4168 шт: термін постачання 21-31 дні (днів) |
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MC74LVX245DW | onsemi |
Description: IC TXRX NON-INVERT 3.6V 20SOICPackaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 4mA, 4mA Supplier Device Package: 20-SOIC Part Status: Active |
на замовлення 12996 шт: термін постачання 21-31 дні (днів) |
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MC74LVX245DT | onsemi |
Description: BUS TRANSCEIVER |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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NTR1P02LT1 | onsemi |
Description: MOSFET P-CH 20V 1.3A SOT23-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MM5Z68VT1 | onsemi |
Description: DIODE ZENER 68V 100MW SOD523Tolerance: ±6% Packaging: Bulk Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOD-523 Power - Max: 100 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V |
на замовлення 26000 шт: термін постачання 21-31 дні (днів) |
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MM3Z68VT1 | onsemi |
Description: DIODE ZENER 68V 300MW SOD323Tolerance: ±6% Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 68 V Impedance (Max) (Zzt): 240 Ohms Supplier Device Package: SOD-323 Part Status: Active Power - Max: 300 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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CAT25320VI-G-ON | onsemi |
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 10 MHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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2SD1835T-AA | onsemi |
Description: TRANS NPN 50V 2A 3-NPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-NP Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW |
на замовлення 221274 шт: термін постачання 21-31 дні (днів) |
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2SD1835T | onsemi |
Description: TRANS NPN 50V 2A 3NPPackaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Frequency - Transition: 150MHz Supplier Device Package: 3-NP Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 750 mW |
на замовлення 7463 шт: термін постачання 21-31 дні (днів) |
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CM1293A-04MR | onsemi |
Description: TVS DIODE 3.3VWM 9.9VC 10MSOPPackaging: Bulk Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 85°C (TA) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V Supplier Device Package: 10-MSOP Unidirectional Channels: 4 Voltage - Clamping (Max) @ Ipp: 9.9V (Typ) Power Line Protection: Yes Part Status: Obsolete |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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| AR0147ATSC00XUEGH3-GEVB | onsemi |
Description: 1.3MP 1/4 CIS IBGA63 (8X7 Packaging: Bulk Sensor Type: Image Sensor Utilized IC / Part: AR0147AT Supplied Contents: Board(s) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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MC14555BCPG | onsemi |
Description: IC DECODER/DEMUX 1 X 2:4 16-PDIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 1 x 2:4 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 2 Current - Output High, Low: 8.8mA, 8.8mA Voltage Supply Source: Dual Supply Supplier Device Package: 16-PDIP Part Status: Obsolete |
на замовлення 4304 шт: термін постачання 21-31 дні (днів) |
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NTMFS5H600NLT1G | onsemi |
Description: MOSFET N-CH 60V 35A/250A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 3.3W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V |
на замовлення 2227 шт: термін постачання 21-31 дні (днів) |
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NTTFS4930NTAG | onsemi |
Description: MOSFET N-CH 30V 4.5A/23A 8WDFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V Power Dissipation (Max): 790mW (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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NTTFS4930NTAG | onsemi |
Description: MOSFET N-CH 30V 4.5A/23A 8WDFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V Power Dissipation (Max): 790mW (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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EMI8141MUTAG | onsemi |
Description: CMC 100MA 2LN SMD ESDPackaging: Tape & Reel (TR) Features: TVS Diode ESD Protection Package / Case: 6-XFDFN Filter Type: Signal Line Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 2 Operating Temperature: -40°C ~ 85°C Height (Max): 0.020" (0.50mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 6Ohm (Typ) |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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NGTB30N60L2WG | onsemi |
Description: IGBT 600V 30A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: 100ns/390ns Switching Energy: 310µJ (on), 1.14mJ (off) Test Condition: 300V, 30A, 30Ohm, 15V Gate Charge: 166 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 225 W |
на замовлення 46 шт: термін постачання 21-31 дні (днів) |
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| 2SJ634-S-TL-E | onsemi | Description: PCH 4V DRIVE SERIES |
на замовлення 7000 шт: термін постачання 21-31 дні (днів) |
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| 2SJ634-E | onsemi | Description: 8A, 60V, P-CHANNEL MOSFET |
на замовлення 13478 шт: термін постачання 21-31 дні (днів) |
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2SA1016KG-AA | onsemi |
Description: SMALL SIGNAL BIPOLAR TRANS PNP Packaging: Bulk Part Status: Active |
на замовлення 14820 шт: термін постачання 21-31 дні (днів) |
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FFPF20UP30DNTU | onsemi |
Description: DIODE ARRAY GP 300V 10A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Avalanche Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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1N4738ARL | onsemi |
Description: DIODE ZENER 8.2V 1W 5%Packaging: Bulk Part Status: Active |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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1N4738ATA | onsemi |
Description: DIODE ZENER 8.2V 1W DO41Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 4.5 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 6 V |
на замовлення 38900 шт: термін постачання 21-31 дні (днів) |
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SN74LS02M | onsemi |
Description: IC GATE NOR 2-INP Packaging: Bulk Part Status: Active |
на замовлення 9296 шт: термін постачання 21-31 дні (днів) |
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MC74AC153D | onsemi |
Description: MUX, AC SERIESPackaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MC74HC367AFL1 | onsemi |
Description: IC BUFFER NON-INVERTING 6VPackaging: Bulk Output Type: 3-State Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 2, 4 (Hex) Current - Output High, Low: 7.8mA, 7.8mA Part Status: Active |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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MC74HC367AFR1 | onsemi |
Description: IC BUFFER NON-INVERTING 6VPackaging: Bulk Output Type: 3-State Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 2, 4 (Hex) Current - Output High, Low: 7.8mA, 7.8mA Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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1SMB10AT3 | onsemi |
Description: TVS DIODE 10VWM 17VC SMBPackaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 1460pF @ 1MHz Current - Peak Pulse (10/1000µs): 35.3A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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1SMB10AT3G | onsemi |
Description: TVS DIODE 10VWM 17VC SMBPackaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Capacitance @ Frequency: 1460pF @ 1MHz Current - Peak Pulse (10/1000µs): 35.3A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 11169 шт: термін постачання 21-31 дні (днів) |
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1SMB100AT3 | onsemi |
Description: TVS DIODE 100VWM 162VC SMBPackaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 190pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.7A Voltage - Reverse Standoff (Typ): 100V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 111V Voltage - Clamping (Max) @ Ipp: 162V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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1SMB100AT3G | onsemi |
Description: TVS DIODE 100VWM 162VC SMB |
на замовлення 1069 шт: термін постачання 21-31 дні (днів) |
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CPH5819-TL-E | onsemi |
Description: NCH+SBD 4V DRIVE SERIES Packaging: Bulk |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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CPH5846-TL-E | onsemi |
Description: PCH+SBD 1.8V DRIVE SERIES Packaging: Bulk |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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CPH5871-TL-W | onsemi |
Description: MOSFET N-CH 30V 3.5A 5CPHPackaging: Bulk Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 900mW (Ta) Supplier Device Package: 5-CPH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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CPH5805-TL-E | onsemi |
Description: NCH+SBD 4V DRIVE SERIES Packaging: Bulk |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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CPH5848-F-TL-E | onsemi |
Description: PCH+SBD 2.5V DRIVE SERIES Packaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| FSA831L10X-F131-ON | onsemi |
Description: USB2.0 HIGH-SPEED (480MBPS) CHARPackaging: Bulk Part Status: Active |
на замовлення 25000 шт: термін постачання 21-31 дні (днів) |
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FSA831AL10X-F131 | onsemi |
Description: IC CHARGER DETECT SWITCH 10UPAKPackaging: Tape & Reel (TR) Package / Case: 10-UFQFN Exposed Pad Mounting Type: Surface Mount Function: Multi-Function Controller Interface: USB Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 10-MicroPak™ Fault Protection: Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| FDS9435ANBAD008 | onsemi |
Description: MOSFET P-CH 30V 5.3A 8-SOIC Packaging: Tape & Reel (TR) Current - Continuous Drain (Id) @ 25°C: 5.3A (Tj) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
| MC74AC11D |
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Виробник: onsemi
Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
на замовлення 12810 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.91 грн |
| MC74AC11DR2 |
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Виробник: onsemi
Description: IC GATE AND 3CH 3-INP 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 3CH 3-INP 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.86 грн |
| MC74AC11N |
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Виробник: onsemi
Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 3CH 3-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 3
Current - Quiescent (Max): 4 µA
на замовлення 4525 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.86 грн |
| BAW56WT1H |
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Виробник: onsemi
Description: DIODE ARRAY GP 70V 200MA SC70-3
Packaging: Bulk
Part Status: Active
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 70V 200MA SC70-3
Packaging: Bulk
Part Status: Active
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 366000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9458+ | 2.11 грн |
| BAW56WT1 |
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Виробник: onsemi
Description: DIODE ARRAY GP 70V 200MA SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
Description: DIODE ARRAY GP 70V 200MA SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V
на замовлення 289686 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9458+ | 2.11 грн |
| SCH1406-TL-E-ON |
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4438+ | 5.28 грн |
| SCH1419-TL-E |
на замовлення 330000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.58 грн |
| SCH1402-S-TL-E |
на замовлення 310000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2959+ | 7.54 грн |
| SCH1436-TL-W |
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Виробник: onsemi
Description: MOSFET N-CH 30V 1.8A SOT563/SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Description: MOSFET N-CH 30V 1.8A SOT563/SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
на замовлення 19995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2184+ | 10.14 грн |
| SCH1436-TL-H |
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Виробник: onsemi
Description: MOSFET N-CH 30V 1.8A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
Description: MOSFET N-CH 30V 1.8A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 900mA, 10V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 10 V
на замовлення 3222975 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1986+ | 10.87 грн |
| SCH1435-TL-W |
Виробник: onsemi
Description: MOSFET N-CH 30V 3A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 10 V
Description: MOSFET N-CH 30V 3A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 265 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1986+ | 10.87 грн |
| SCH1433-TL-W |
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Виробник: onsemi
Description: MOSFET N-CH 20V 3.5A SOT563/SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Description: MOSFET N-CH 20V 3.5A SOT563/SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1986+ | 10.87 грн |
| SCH1434-TL-H |
Виробник: onsemi
Description: MOSFET N-CH 30V 2A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
Description: MOSFET N-CH 30V 2A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1986+ | 10.87 грн |
| SCH1433-TL-H |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 20V 3.5A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
Description: MOSFET N-CH 20V 3.5A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 64mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 10 V
на замовлення 594000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1820+ | 11.59 грн |
| SCH1439-TL-H |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 3.5A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A 6SCH
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Supplier Device Package: 6-SCH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
на замовлення 159639 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1820+ | 11.59 грн |
| SCH1435-TL-H |
![]() |
на замовлення 34780 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1820+ | 11.59 грн |
| SCH1439-TL-W |
![]() |
Виробник: onsemi
Description: MOSFET N-CH 30V 3.5A SOT563/SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A SOT563/SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 1.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-563/SCH6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
на замовлення 19895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1820+ | 11.59 грн |
| SCH1433-S-TL-H |
Виробник: onsemi
Description: MOSFET N-CH 20V 3.5A SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tj)
Supplier Device Package: 6-SCH
Description: MOSFET N-CH 20V 3.5A SCH6
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tj)
Supplier Device Package: 6-SCH
на замовлення 200000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1680+ | 13.04 грн |
| SCH1402-TL-E |
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3206+ | 6.79 грн |
| MMSF4N01HDR2 |
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Виробник: onsemi
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 595 pF @ 10 V
на замовлення 105281 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1680+ | 12.55 грн |
| NTMS4N01R2 |
![]() |
Виробник: onsemi
Description: MOSFET PWR N-CHAN 4.2A 20V 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 770mW (Ta)
Supplier Device Package: 8-SOIC
Vgs (Max): ±10V
Description: MOSFET PWR N-CHAN 4.2A 20V 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 770mW (Ta)
Supplier Device Package: 8-SOIC
Vgs (Max): ±10V
на замовлення 17191 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1285+ | 16.04 грн |
| NTMS4N01R2G |
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Виробник: onsemi
Description: MOSFET N-CH 20V 3.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Description: MOSFET N-CH 20V 3.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
на замовлення 4168 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 950+ | 22.32 грн |
| MC74LVX245DW |
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Виробник: onsemi
Description: IC TXRX NON-INVERT 3.6V 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC TXRX NON-INVERT 3.6V 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 4mA, 4mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 12996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3806+ | 6.27 грн |
| MC74LVX245DT |
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Виробник: onsemi
Description: BUS TRANSCEIVER
Description: BUS TRANSCEIVER
товару немає в наявності
В кошику
од. на суму грн.
| NTR1P02LT1 |
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Виробник: onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3
Description: MOSFET P-CH 20V 1.3A SOT23-3
товару немає в наявності
В кошику
од. на суму грн.
| MM5Z68VT1 |
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Виробник: onsemi
Description: DIODE ZENER 68V 100MW SOD523
Tolerance: ±6%
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-523
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Description: DIODE ZENER 68V 100MW SOD523
Tolerance: ±6%
Packaging: Bulk
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-523
Power - Max: 100 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.37 грн |
| MM3Z68VT1 |
![]() |
Виробник: onsemi
Description: DIODE ZENER 68V 300MW SOD323
Tolerance: ±6%
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
Description: DIODE ZENER 68V 300MW SOD323
Tolerance: ±6%
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 240 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 47.6 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.37 грн |
| CAT25320VI-G-ON |
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Виробник: onsemi
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1835T-AA |
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Виробник: onsemi
Description: TRANS NPN 50V 2A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
Description: TRANS NPN 50V 2A 3-NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
на замовлення 221274 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1986+ | 10.87 грн |
| 2SD1835T |
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Виробник: onsemi
Description: TRANS NPN 50V 2A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
Description: TRANS NPN 50V 2A 3NP
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: 3-NP
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 750 mW
на замовлення 7463 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2420+ | 9.04 грн |
| CM1293A-04MR |
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Виробник: onsemi
Description: TVS DIODE 3.3VWM 9.9VC 10MSOP
Packaging: Bulk
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 10-MSOP
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Description: TVS DIODE 3.3VWM 9.9VC 10MSOP
Packaging: Bulk
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V
Supplier Device Package: 10-MSOP
Unidirectional Channels: 4
Voltage - Clamping (Max) @ Ipp: 9.9V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1031+ | 22.36 грн |
| AR0147ATSC00XUEGH3-GEVB |
Виробник: onsemi
Description: 1.3MP 1/4 CIS IBGA63 (8X7
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0147AT
Supplied Contents: Board(s)
Part Status: Obsolete
Description: 1.3MP 1/4 CIS IBGA63 (8X7
Packaging: Bulk
Sensor Type: Image Sensor
Utilized IC / Part: AR0147AT
Supplied Contents: Board(s)
Part Status: Obsolete
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| MC14555BCPG |
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Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 2:4 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-PDIP
Part Status: Obsolete
Description: IC DECODER/DEMUX 1 X 2:4 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 2
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-PDIP
Part Status: Obsolete
на замовлення 4304 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 568+ | 37.45 грн |
| NTMFS5H600NLT1G |
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Виробник: onsemi
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
Description: MOSFET N-CH 60V 35A/250A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.3W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6680 pF @ 30 V
на замовлення 2227 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 267.02 грн |
| 10+ | 178.48 грн |
| 100+ | 126.45 грн |
| 500+ | 97.10 грн |
| NTTFS4930NTAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V
Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V
Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
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| NTTFS4930NTAG |
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Виробник: onsemi
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V
Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
Description: MOSFET N-CH 30V 4.5A/23A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6A, 10V
Power Dissipation (Max): 790mW (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 476 pF @ 15 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.50 грн |
| 10+ | 37.22 грн |
| EMI8141MUTAG |
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Виробник: onsemi
Description: CMC 100MA 2LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 6-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
Description: CMC 100MA 2LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 6-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.055" L x 0.053" W (1.40mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 2
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 6Ohm (Typ)
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 28.36 грн |
| 6000+ | 26.28 грн |
| 15000+ | 25.46 грн |
| NGTB30N60L2WG |
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Виробник: onsemi
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 100ns/390ns
Switching Energy: 310µJ (on), 1.14mJ (off)
Test Condition: 300V, 30A, 30Ohm, 15V
Gate Charge: 166 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 225 W
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 100ns/390ns
Switching Energy: 310µJ (on), 1.14mJ (off)
Test Condition: 300V, 30A, 30Ohm, 15V
Gate Charge: 166 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 225 W
на замовлення 46 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 360.97 грн |
| 30+ | 208.72 грн |
| 2SJ634-S-TL-E |
Виробник: onsemi
Description: PCH 4V DRIVE SERIES
Description: PCH 4V DRIVE SERIES
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 425+ | 59.06 грн |
| 2SJ634-E |
Виробник: onsemi
Description: 8A, 60V, P-CHANNEL MOSFET
Description: 8A, 60V, P-CHANNEL MOSFET
на замовлення 13478 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 258+ | 96.50 грн |
| 2SA1016KG-AA |
на замовлення 14820 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1514+ | 14.13 грн |
| FFPF20UP30DNTU |
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Виробник: onsemi
Description: DIODE ARRAY GP 300V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Description: DIODE ARRAY GP 300V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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| 1N4738ARL |
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на замовлення 60000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7869+ | 2.83 грн |
| 1N4738ATA |
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Виробник: onsemi
Description: DIODE ZENER 8.2V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Description: DIODE ZENER 8.2V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 4.5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
на замовлення 38900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7869+ | 2.83 грн |
| SN74LS02M |
на замовлення 9296 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2184+ | 9.83 грн |
| MC74HC367AFL1 |
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Виробник: onsemi
Description: IC BUFFER NON-INVERTING 6V
Packaging: Bulk
Output Type: 3-State
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Part Status: Active
Description: IC BUFFER NON-INVERTING 6V
Packaging: Bulk
Output Type: 3-State
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1010+ | 21.21 грн |
| MC74HC367AFR1 |
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Виробник: onsemi
Description: IC BUFFER NON-INVERTING 6V
Packaging: Bulk
Output Type: 3-State
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Part Status: Active
Description: IC BUFFER NON-INVERTING 6V
Packaging: Bulk
Output Type: 3-State
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 7.8mA, 7.8mA
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1010+ | 21.21 грн |
| 1SMB10AT3 |
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Виробник: onsemi
Description: TVS DIODE 10VWM 17VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1460pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 10VWM 17VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1460pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2219+ | 11.04 грн |
| 1SMB10AT3G |
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Виробник: onsemi
Description: TVS DIODE 10VWM 17VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Capacitance @ Frequency: 1460pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 10VWM 17VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Capacitance @ Frequency: 1460pF @ 1MHz
Current - Peak Pulse (10/1000µs): 35.3A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 11169 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1665+ | 14.20 грн |
| 1SMB100AT3 |
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Виробник: onsemi
Description: TVS DIODE 100VWM 162VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 190pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 100VWM 162VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 190pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.7A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1211+ | 19.72 грн |
| 1SMB100AT3G |
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Виробник: onsemi
Description: TVS DIODE 100VWM 162VC SMB
Description: TVS DIODE 100VWM 162VC SMB
на замовлення 1069 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1069+ | 22.52 грн |
| CPH5819-TL-E |
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2664+ | 8.14 грн |
| CPH5846-TL-E |
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2219+ | 10.36 грн |
| CPH5871-TL-W |
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Виробник: onsemi
Description: MOSFET N-CH 30V 3.5A 5CPH
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: 5-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Description: MOSFET N-CH 30V 3.5A 5CPH
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: 5-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1722+ | 12.58 грн |
| CPH5805-TL-E |
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1902+ | 11.84 грн |
| CPH5848-F-TL-E |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1665+ | 14.14 грн |
| FSA831L10X-F131-ON |
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на замовлення 25000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 987+ | 23.72 грн |
| FSA831AL10X-F131 |
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Виробник: onsemi
Description: IC CHARGER DETECT SWITCH 10UPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Multi-Function Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Fault Protection: Over Voltage
Description: IC CHARGER DETECT SWITCH 10UPAK
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Multi-Function Controller
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 10-MicroPak™
Fault Protection: Over Voltage
товару немає в наявності
В кошику
од. на суму грн.
| FDS9435ANBAD008 |
Виробник: onsemi
Description: MOSFET P-CH 30V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tj)
Part Status: Obsolete
Description: MOSFET P-CH 30V 5.3A 8-SOIC
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tj)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.




































