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NCV8518CPDR2G ONSEMI ncv8518c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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NCV8518CPWR2G ONSEMI ncv8518c-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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FDP150N10 FDP150N10 ONSEMI fdp150n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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FDP150N10A-F102 FDP150N10A-F102 ONSEMI FDP150N10A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
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DF02M DF02M ONSEMI DF005-10m.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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NCV8152MX180280TCG ONSEMI ncv8152-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
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NCV8154MW180280TBG ONSEMI ncv8154-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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MBR140ESFT1G MBR140ESFT1G ONSEMI mbr140esf-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Max. forward voltage: 0.56V
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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MBR140SFT3G MBR140SFT3G ONSEMI mbr140sft1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A
Case: SOD123F
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 1A
Leakage current: 0.5mA
Type of diode: Schottky rectifying
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FAN3225TMX ONSEMI fan3223-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of package: reel; tape
Output current: -5...5A
Pulse fall time: 9ns
Impulse rise time: 12ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Case: SO8
Type of integrated circuit: driver
Technology: MillerDrive™
Kind of output: inverting; non-inverting
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ES3D ES3D ONSEMI ES3J.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Mounting: SMD
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 100A
Max. forward voltage: 0.95V
Power dissipation: 1.66W
на замовлення 367 шт:
термін постачання 14-30 дні (днів)
9+50.58 грн
14+30.44 грн
50+22.06 грн
100+19.46 грн
250+16.77 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
BAS16LT3G BAS16LT3G ONSEMI BAS16LT1G.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
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 Мінімальне замовлення: 10000 шт
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SBAS16LT3G SBAS16LT3G ONSEMI BAS16LT1G.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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 Мінімальне замовлення: 10000 шт
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1SMB5914BT3G 1SMB5914BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Manufacturer series: 1SMB59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 3.6V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
на замовлення 5455 шт:
термін постачання 14-30 дні (днів)
16+28.90 грн
22+19.46 грн
27+15.85 грн
50+9.64 грн
100+7.97 грн
200+6.71 грн
500+6.54 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
LM358AN LM358AN ONSEMI LM358AN.pdf Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
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FCPF380N65FL1-F154 FCPF380N65FL1-F154 ONSEMI FCPF380N65FL1-F154-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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MBT3946DW1T1G MBT3946DW1T1G ONSEMI MBT3946DW1T1G.PDF Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 938 шт:
термін постачання 14-30 дні (днів)
30+15.35 грн
49+8.64 грн
100+5.43 грн
500+3.88 грн
Мінімальне замовлення: 30 шт
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MBT3946DW1T2G MBT3946DW1T2G ONSEMI mbt3946dw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 1627 шт:
термін постачання 14-30 дні (днів)
46+9.93 грн
79+5.37 грн
103+4.09 грн
153+2.74 грн
500+1.73 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
SMBT3946DW1T1G SMBT3946DW1T1G ONSEMI mbt3946dw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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TIL113M TIL113M ONSEMI TIL113M-ONS.pdf Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Max. off-state voltage: 3V
CTR@If: 300%@10mA
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 948 шт:
термін постачання 14-30 дні (днів)
13+36.13 грн
16+26.42 грн
30+23.57 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
SZMMSZ5250BT1G SZMMSZ5250BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MMSZ5250B MMSZ5250B ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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 Мінімальне замовлення: 10 шт
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30A02CH-TL-E 30A02CH-TL-E ONSEMI 30A02CH-D.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 0.7W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...500
Kind of package: reel; tape
Case: CPH3
Frequency: 520MHz
Collector current: 0.7A
на замовлення 1157 шт:
термін постачання 14-30 дні (днів)
20+23.48 грн
28+15.01 грн
100+9.56 грн
Мінімальне замовлення: 20 шт
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SZBZX84C15LT1G SZBZX84C15LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 4400 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
90+4.70 грн
124+3.39 грн
141+2.99 грн
250+2.59 грн
500+2.32 грн
1000+2.07 грн
3000+1.75 грн
Мінімальне замовлення: 63 шт
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BZX84C15LT3G BZX84C15LT3G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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SZBZX84C15ET1G SZBZX84C15ET1G ONSEMI BZX84CxxET1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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NLU2G17AMX1TCG ONSEMI nlu2g17-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
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 Мінімальне замовлення: 3 шт
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NLX2G17AMX1TCG ONSEMI NLX2G17_Rev2_Oct2012.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
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 Мінімальне замовлення: 3 шт
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FDMC3612 ONSEMI fdmc3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC3612-L701 ONSEMI fdmc3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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SS29 SS29 ONSEMI SS29-D.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
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SS29FA SS29FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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ES3C ONSEMI ES3J-D.PDF es3a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
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FDMC86139P FDMC86139P ONSEMI fdmc86139p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 775 шт:
термін постачання 14-30 дні (днів)
3+153.54 грн
10+92.25 грн
25+82.19 грн
50+75.48 грн
100+68.77 грн
250+62.90 грн
Мінімальне замовлення: 3 шт
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FDMC7692 FDMC7692 ONSEMI fdmc7692-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 2935 шт:
термін постачання 14-30 дні (днів)
8+61.41 грн
10+46.88 грн
50+37.32 грн
Мінімальне замовлення: 8 шт
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FDMC510P FDMC510P ONSEMI FDMC510P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Power dissipation: 41W
Case: MLP8
Gate-source voltage: ±8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMC8651 FDMC8651 ONSEMI FDMC8651.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Technology: PowerTrench®
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FDMC8462 FDMC8462 ONSEMI FDMC8462.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
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FDMC8878 ONSEMI FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16.5A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC0310AS-F127 ONSEMI fdmc0310as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 100A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC8200 ONSEMI ONSM-S-A0003590809-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/18A; 1.9/2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/18A
Power dissipation: 1.9/2.2W
Case: Power33
Gate-source voltage: ±20/±20V
On-state resistance: 32/13.5mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC9430L-F085 ONSEMI fdmc9430l_f085-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 11.4W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86262P ONSEMI fdmc86262p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 307mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -35A
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FDMC8327L ONSEMI fdmc8327l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 60A; 30W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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FDMC8097AC ONSEMI fdmc8097ac-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
Power dissipation: 1.9W
Case: Power33
Gate-source voltage: ±20V; ±25V
On-state resistance: 2171/306mΩ
Mounting: SMD
Gate charge: 4/6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86184 ONSEMI fdmc86184-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 266A
Technology: PowerTrench®
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FDMC86160ET100 ONSEMI fdmc86160et100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 204A
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FDMC86340 ONSEMI fdmc86340-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 48A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
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FDMC2610 ONSEMI fdmc2610-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC6679AZ ONSEMI fdmc6679az-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 41W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC6686P ONSEMI fdmc6686p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -377A
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FDMC86261P ONSEMI fdmc86261p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -9A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 269mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
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FDMC7672 ONSEMI fdmc7672-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
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FDMC8360L ONSEMI fdmc8360l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 240A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
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FDMC86520L ONSEMI fdmc86520l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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FDMC7672S ONSEMI fdmc7672s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
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FDMC8321L ONSEMI fdmc8321l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 4.1mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 100A
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FDMC8360LET40 ONSEMI fdmc8360let40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 658A
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FDMC86116LZ ONSEMI fdmc86116lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 15A
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FDMC007N08LC ONSEMI fdmc007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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NCV8518CPDR2G ncv8518c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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NCV8518CPWR2G ncv8518c-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.25A; SO16-W; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SO16-W
Kind of package: reel; tape
Application: automotive industry
Output current: 0.25A
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
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FDP150N10 fdp150n10-d.pdf
FDP150N10
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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FDP150N10A-F102 FDP150N10A.pdf
FDP150N10A-F102
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
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DF02M DF005-10m.pdf
DF02M
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1.5A; Ifsm: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 1.5A
Max. forward impulse current: 50A
Case: MDIP4L
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: THT
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NCV8152MX180280TCG ncv8152-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.15A; XDFN6; SMD; Ch: 2
Application: automotive industry
Kind of package: reel; tape
Case: XDFN6
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 2
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NCV8154MW180280TBG ncv8154-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; DFN10; SMD; reel,tape
Mounting: SMD
Case: DFN10
Number of channels: 2
Application: automotive industry
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
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MBR140ESFT1G mbr140esf-d.pdf
MBR140ESFT1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Case: SOD123F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Max. forward voltage: 0.56V
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
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MBR140SFT3G mbr140sft1-d.pdf
MBR140SFT3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A
Case: SOD123F
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Load current: 1A
Leakage current: 0.5mA
Type of diode: Schottky rectifying
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FAN3225TMX fan3223-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; -5÷5A
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of package: reel; tape
Output current: -5...5A
Pulse fall time: 9ns
Impulse rise time: 12ns
Number of channels: 2
Supply voltage: 4.5...18V DC
Case: SO8
Type of integrated circuit: driver
Technology: MillerDrive™
Kind of output: inverting; non-inverting
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ES3D ES3J.pdf
ES3D
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Mounting: SMD
Features of semiconductor devices: fast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Capacitance: 45pF
Type of diode: rectifying
Reverse recovery time: 30ns
Max. forward impulse current: 100A
Max. forward voltage: 0.95V
Power dissipation: 1.66W
на замовлення 367 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+50.58 грн
14+30.44 грн
50+22.06 грн
100+19.46 грн
250+16.77 грн
Мінімальне замовлення: 9 шт
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BAS16LT3G BAS16LT1G.PDF
BAS16LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
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Мінімальне замовлення: 10000 шт
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SBAS16LT3G BAS16LT1G.PDF
SBAS16LT3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
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Мінімальне замовлення: 10000 шт
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1SMB5914BT3G 1SMB59xxBT3G.PDF
1SMB5914BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.6V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Manufacturer series: 1SMB59xxB
Power dissipation: 3W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Zener voltage: 3.6V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
на замовлення 5455 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
16+28.90 грн
22+19.46 грн
27+15.85 грн
50+9.64 грн
100+7.97 грн
200+6.71 грн
500+6.54 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
LM358AN LM358AN.pdf
LM358AN
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; DIP8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: THT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 0.6V/μs
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
FCPF380N65FL1-F154 FCPF380N65FL1-F154-D.PDF
FCPF380N65FL1-F154
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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MBT3946DW1T1G MBT3946DW1T1G.PDF
MBT3946DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 938 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
30+15.35 грн
49+8.64 грн
100+5.43 грн
500+3.88 грн
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
MBT3946DW1T2G mbt3946dw1t1-d.pdf
MBT3946DW1T2G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250...300MHz
на замовлення 1627 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
46+9.93 грн
79+5.37 грн
103+4.09 грн
153+2.74 грн
500+1.73 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
SMBT3946DW1T1G mbt3946dw1t1-d.pdf
SMBT3946DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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TIL113M TIL113M-ONS.pdf
TIL113M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Max. off-state voltage: 3V
CTR@If: 300%@10mA
Turn-on time: 5µs
Turn-off time: 0.1ms
на замовлення 948 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+36.13 грн
16+26.42 грн
30+23.57 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
SZMMSZ5250BT1G MMSZ52xxT1G.PDF
SZMMSZ5250BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MMSZ5250B MMSZ52xxT1G.PDF
MMSZ5250B
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 20V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
30A02CH-TL-E 30A02CH-D.PDF
30A02CH-TL-E
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.7A; 0.7W; CPH3
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 0.7W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 200...500
Kind of package: reel; tape
Case: CPH3
Frequency: 520MHz
Collector current: 0.7A
на замовлення 1157 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+23.48 грн
28+15.01 грн
100+9.56 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
SZBZX84C15LT1G BZX84B_BZX84C.PDF
SZBZX84C15LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 4400 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
63+7.23 грн
90+4.70 грн
124+3.39 грн
141+2.99 грн
250+2.59 грн
500+2.32 грн
1000+2.07 грн
3000+1.75 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BZX84C15LT3G BZX84B_BZX84C.PDF
BZX84C15LT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84C
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SZBZX84C15ET1G BZX84CxxET1G.PDF
SZBZX84C15ET1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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NLU2G17AMX1TCG nlu2g17-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
Operating temperature: -55...125°C
Quiescent current: 40µA
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Мінімальне замовлення: 3 шт
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NLX2G17AMX1TCG NLX2G17_Rev2_Oct2012.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; ULLGA6
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: ULLGA6
Kind of package: reel; tape
Supply voltage: 1.65...5.5V DC
Kind of input: with Schmitt trigger
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FDMC3612 fdmc3612-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC3612-L701 fdmc3612-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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SS29 SS29-D.pdf
SS29
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
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SS29FA ss29fa-d.pdf
SS29FA
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 50A
Kind of package: reel; tape
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ES3C ES3J-D.PDF es3a.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 3A; 30ns; SMC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Kind of package: reel; tape
Power dissipation: 1.66W
Capacitance: 45pF
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FDMC86139P fdmc86139p-d.pdf
FDMC86139P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 0.104Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 775 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+153.54 грн
10+92.25 грн
25+82.19 грн
50+75.48 грн
100+68.77 грн
250+62.90 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FDMC7692 fdmc7692-d.pdf
FDMC7692
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 2935 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+61.41 грн
10+46.88 грн
50+37.32 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
FDMC510P FDMC510P.pdf
FDMC510P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -18A; 41W; MLP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -18A
Power dissipation: 41W
Case: MLP8
Gate-source voltage: ±8V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMC8651 FDMC8651.pdf
FDMC8651
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±12V
Technology: PowerTrench®
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FDMC8462 FDMC8462.pdf
FDMC8462
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 20A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 41W
Case: PQFN8
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: PowerTrench®
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
FDMC8878 FAIR-S-A0002365638-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16.5A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16.5A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC0310AS-F127 fdmc0310as-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Pulsed drain current: 100A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC8200 ONSM-S-A0003590809-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/18A; 1.9/2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/18A
Power dissipation: 1.9/2.2W
Case: Power33
Gate-source voltage: ±20/±20V
On-state resistance: 32/13.5mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC9430L-F085 fdmc9430l_f085-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 11.4W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86262P fdmc86262p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 307mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -35A
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FDMC8327L fdmc8327l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 60A; 30W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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FDMC8097AC fdmc8097ac-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
Power dissipation: 1.9W
Case: Power33
Gate-source voltage: ±20V; ±25V
On-state resistance: 2171/306mΩ
Mounting: SMD
Gate charge: 4/6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86184 fdmc86184-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 266A
Technology: PowerTrench®
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FDMC86160ET100 fdmc86160et100-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 204A
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FDMC86340 fdmc86340-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 48A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
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FDMC2610 fdmc2610-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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FDMC6679AZ fdmc6679az-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 41W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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FDMC6686P fdmc6686p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -377A
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FDMC86261P fdmc86261p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -9A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 269mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
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FDMC7672 fdmc7672-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
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FDMC8360L fdmc8360l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 240A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
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FDMC86520L fdmc86520l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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FDMC7672S fdmc7672s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
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FDMC8321L fdmc8321l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 4.1mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 100A
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Мінімальне замовлення: 3000 шт
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FDMC8360LET40 fdmc8360let40-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 658A
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FDMC86116LZ fdmc86116lz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 15A
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FDMC007N08LC fdmc007n08lc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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