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FDMC0310AS-F127 ONSEMI fdmc0310as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: PowerTrench®
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FDMC8200 ONSEMI ONSM-S-A0003590809-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/18A; 1.9/2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/18A
Power dissipation: 1.9/2.2W
Case: Power33
Gate-source voltage: ±20/±20V
On-state resistance: 32/13.5mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC9430L-F085 ONSEMI fdmc9430l_f085-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 11.4W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86262P ONSEMI fdmc86262p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 307mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -35A
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FDMC8327L ONSEMI fdmc8327l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 60A; 30W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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FDMC8097AC ONSEMI fdmc8097ac-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
Power dissipation: 1.9W
Case: Power33
Gate-source voltage: ±20V; ±25V
On-state resistance: 2171/306mΩ
Mounting: SMD
Gate charge: 4/6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86184 ONSEMI fdmc86184-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 266A
Technology: PowerTrench®
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FDMC86160ET100 ONSEMI fdmc86160et100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 204A
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FDMC86340 ONSEMI fdmc86340-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 48A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
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FDMC2610 ONSEMI fdmc2610-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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 Мінімальне замовлення: 3000 шт
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FDMC6679AZ ONSEMI fdmc6679az-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 41W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC6686P ONSEMI fdmc6686p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -377A
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FDMC86261P ONSEMI fdmc86261p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -9A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 269mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
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FDMC7672 ONSEMI fdmc7672-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
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FDMC8360L ONSEMI fdmc8360l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 240A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
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FDMC86520L ONSEMI fdmc86520l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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FDMC7672S ONSEMI fdmc7672s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
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FDMC8321L ONSEMI fdmc8321l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 4.1mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 100A
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FDMC8360LET40 ONSEMI fdmc8360let40-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 658A
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FDMC86116LZ ONSEMI fdmc86116lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 15A
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FDMC007N08LC ONSEMI fdmc007n08lc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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FDMC007N08LCDC ONSEMI fdmc007n08lcdc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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NCP551SN33T1G ONSEMI NCP551.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
Kind of package: reel; tape
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NCP1075BAP065G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16.8Ω
Operating voltage: 6.5...20V DC
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NCP1075BAP130G ONSEMI NCP1076A-D.PDF Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 117...143kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16.8Ω
Operating voltage: 6.5...20V DC
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NCP4306AAAZZZADR2G NCP4306AAAZZZADR2G ONSEMI ncp4306-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
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NCP4306AADZZZADR2G NCP4306AADZZZADR2G ONSEMI ncp4306-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
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NCP4306AAHZZZADR2G NCP4306AAHZZZADR2G ONSEMI ncp4306-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
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FDPF2D3N10C FDPF2D3N10C ONSEMI fdp2d3n10c-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
1+486.08 грн
5+368.28 грн
10+329.74 грн
25+299.76 грн
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MC1496BDR2G MC1496BDR2G ONSEMI mc1496-d.pdf Category: RTV - audio integrated circuits
Description: IC: modulator RF; 300MHz; SO14
Type of integrated circuit: modulator RF
Frequency: 300MHz
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
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NJW0302G NJW0302G ONSEMI NJW0281_NJW0302.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
2+225.25 грн
10+168.72 грн
20+146.46 грн
30+135.32 грн
Мінімальне замовлення: 2 шт
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NTMFS6H800NLT1G ONSEMI ntmfs6h800nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS6H800NT1G ONSEMI ntmfs6h800n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 900A; 100W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 900A
Power dissipation: 100W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
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MJE182G MJE182G ONSEMI MJE172G.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 390 шт:
термін постачання 14-30 дні (днів)
6+78.40 грн
10+46.76 грн
50+36.57 грн
100+32.89 грн
Мінімальне замовлення: 6 шт
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NVMFS6H824NLT1G ONSEMI nvmfs6h824nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H824NLWFT1G ONSEMI nvmfs6h824nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H824NT1G ONSEMI nvmfs6h824n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H824NWFT1G ONSEMI nvmfs6h824n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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74VHC139M 74VHC139M ONSEMI FAIRS03250-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; SO16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Family: VHC
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
9+51.65 грн
11+39.91 грн
48+31.95 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
MC74VHC1G07DFT1GMC74VHC1G07DFT1G
MC74VHC1G07DFT1GMC74VHC1G07DFT1G
 MC74VHC1G07DFT1G ONSEMI mc74vhc1g07-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
на замовлення 2705 шт:
термін постачання 14-30 дні (днів)
39+11.99 грн
43+10.19 грн
100+9.85 грн
250+9.51 грн
500+9.34 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
MC74VHC1G04DFT2GMC74VHC1G04DFT2G
MC74VHC1G04DFT2GMC74VHC1G04DFT2G
 MC74VHC1G04DFT2G ONSEMI Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 1
Family: VHC
Kind of gate: NOT
на замовлення 1361 шт:
термін постачання 14-30 дні (днів)
56+8.30 грн
73+5.91 грн
Мінімальне замовлення: 56 шт
В кошику  од. на суму  грн.
M74VHC1G135DTT1G M74VHC1G135DTT1G ONSEMI M74VHC1G135DTT1G.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Number of inputs: 2
Family: VHC
Kind of gate: NAND
на замовлення 1680 шт:
термін постачання 14-30 дні (днів)
50+10.24 грн
60+7.37 грн
250+6.25 грн
1000+5.22 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
MC74VHC1G02DTT1GMC74VHC1G02DTT1G
MC74VHC1G02DTT1GMC74VHC1G02DTT1G
 MC74VHC1G02DTT1G ONSEMI mc74vhc1g02-d.pdf Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Family: VHC
Kind of gate: NOR
на замовлення 1560 шт:
термін постачання 14-30 дні (днів)
63+7.38 грн
78+5.52 грн
250+4.75 грн
1000+4.21 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
MC74VHC1G01DFT1GMC74VHC1G01DFT1G
MC74VHC1G01DFT1GMC74VHC1G01DFT1G
 MC74VHC1G01DFT1G ONSEMI mc74vhc1g01-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Family: VHC
Kind of gate: NAND
на замовлення 1139 шт:
термін постачання 14-30 дні (днів)
79+5.90 грн
91+4.73 грн
114+3.78 грн
500+3.20 грн
Мінімальне замовлення: 79 шт
В кошику  од. на суму  грн.
M74VHC1GT00DFT2GM74VHC1GT00DFT2G
M74VHC1GT00DFT2GM74VHC1GT00DFT2G
 M74VHC1GT00DFT2G ONSEMI Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Family: VHC
Kind of gate: NAND
на замовлення 436 шт:
термін постачання 14-30 дні (днів)
88+5.26 грн
112+3.84 грн
141+3.06 грн
Мінімальне замовлення: 88 шт
В кошику  од. на суму  грн.
MC74VHC1G14DFT1G-Q ONSEMI Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; SMD; SC70-5
Type of integrated circuit: digital
Kind of integrated circuit: inverter; Schmitt trigger
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: VHC
на замовлення 27000 шт:
термін постачання 14-30 дні (днів)
18000+2.20 грн
Мінімальне замовлення: 18000 шт
В кошику  од. на суму  грн.
FSBB30CH60C FSBB30CH60C ONSEMI FSBB30CH60C.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMEC-027
Output current: 30A
Number of channels: 6
Mounting: THT
Power dissipation: 106W
Operating temperature: -40...150°C
Technology: Motion SPM® 3
Operating voltage: 13.5...16.5/0...400V DC
Topology: IGBT three-phase bridge
Collector-emitter voltage: 600V
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
1+1593.83 грн
В кошику  од. на суму  грн.
BD438STU BD438STU ONSEMI BD438STU.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 4A; 36W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 3MHz
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DTC114TM3T5G ONSEMI DTC114T-D.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Current gain: 160...350
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NCV272DMR2G ONSEMI tlv271-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 2nA
Input offset current: 0.5nA
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NCV272DR2G ONSEMI tlv271-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 2nA
Input offset current: 0.5nA
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NCP154MX280270TAG ONSEMI NCP154-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Case: XDFN8
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Number of channels: 2
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CAT25020VI-GT3 ONSEMI CAT25010-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
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CAT25020YI-GT3 ONSEMI CAT25010-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 2kb EEPROM
Clock frequency: 20MHz
Memory organisation: 256x8bit
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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NTBG1000N170M1 ONSEMI NTBG1000N170M1-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 14.6A
Power dissipation: 25W
Gate charge: 14nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 1.8Ω
товару немає в наявності
 Мінімальне замовлення: 800 шт
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NVBG1000N170M1 ONSEMI nvbg1000n170m1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W
Polarisation: unipolar
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 14nC
On-state resistance: 1.8Ω
Drain current: 3A
Pulsed drain current: 14.6A
Power dissipation: 25W
Drain-source voltage: 1.7kV
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S100 ONSEMI ss19-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.85V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 0.1kV
Mounting: SMD
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NC7SZ08M5X NC7SZ08M5X ONSEMI NC7SZ08.pdf description Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT23-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single; 1
Supply voltage: 1.65...5.5V DC
на замовлення 1893 шт:
термін постачання 14-30 дні (днів)
125+3.69 грн
132+3.25 грн
148+2.91 грн
165+2.60 грн
183+2.35 грн
250+2.24 грн
500+2.14 грн
Мінімальне замовлення: 125 шт
В кошику  од. на суму  грн.
NC7SZ08P5X NC7SZ08P5X ONSEMI NC7SZ08.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Supply voltage: 1.65...5.5V DC
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)
84+5.53 грн
114+3.77 грн
132+3.25 грн
161+2.67 грн
183+2.35 грн
3000+2.06 грн
Мінімальне замовлення: 84 шт
В кошику  од. на суму  грн.
MM3Z15VT1G MM3Z15VT1G ONSEMI MM3ZxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
на замовлення 3792 шт:
термін постачання 14-30 дні (днів)
46+10.15 грн
62+6.94 грн
91+4.71 грн
108+4.00 грн
150+3.67 грн
500+2.91 грн
1000+2.48 грн
1500+2.29 грн
3000+2.01 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
FDMC0310AS-F127 fdmc0310as-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 100A; 36W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 36W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 100A
Technology: PowerTrench®
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FDMC8200 ONSM-S-A0003590809-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/18A; 1.9/2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/18A
Power dissipation: 1.9/2.2W
Case: Power33
Gate-source voltage: ±20/±20V
On-state resistance: 32/13.5mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC9430L-F085 fdmc9430l_f085-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 12A; 11.4W; Power33
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Power dissipation: 11.4W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86262P fdmc86262p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2A; Idm: -35A; 40W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 307mΩ
Mounting: SMD
Gate charge: 9.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -35A
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FDMC8327L fdmc8327l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 14A; Idm: 60A; 30W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 14A
Power dissipation: 30W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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FDMC8097AC fdmc8097ac-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 150/-150V; 2.4/-0.9A; 1.9W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 150/-150V
Drain current: 2.4/-0.9A
Power dissipation: 1.9W
Case: Power33
Gate-source voltage: ±20V; ±25V
On-state resistance: 2171/306mΩ
Mounting: SMD
Gate charge: 4/6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMC86184 fdmc86184-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 266A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 266A
Technology: PowerTrench®
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FDMC86160ET100 fdmc86160et100-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; Idm: 204A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 204A
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FDMC86340 fdmc86340-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 48A; Idm: 200A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 48A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
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FDMC2610 fdmc2610-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
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FDMC6679AZ fdmc6679az-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 41W; WDFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 41W
Case: WDFN8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
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FDMC6686P fdmc6686p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -377A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -56A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -377A
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FDMC86261P fdmc86261p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -9A; Idm: -20A; 40W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -9A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 269mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
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FDMC7672 fdmc7672-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 50A
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FDMC8360L fdmc8360l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 240A; 54W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 54W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
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FDMC86520L fdmc86520l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 40W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 40W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 11.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 60A
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FDMC7672S fdmc7672s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 36W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 36W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 45A
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FDMC8321L fdmc8321l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; Idm: 100A; 40W; Power33
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 61nC
On-state resistance: 4.1mΩ
Power dissipation: 40W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Pulsed drain current: 100A
товару немає в наявності
Мінімальне замовлення: 3000 шт
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FDMC8360LET40 fdmc8360let40-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 658A; 75W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 75W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 658A
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FDMC86116LZ fdmc86116lz-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 7.5A; Idm: 15A; 19W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.5A
Power dissipation: 19W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 15A
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FDMC007N08LC fdmc007n08lc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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FDMC007N08LCDC fdmc007n08lcdc-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Pulsed drain current: 339A
Power dissipation: 57W
Case: PQFN8
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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NCP551SN33T1G NCP551.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 3.3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...12V
Kind of package: reel; tape
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NCP1075BAP065G ncp1076a-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.4A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16.8Ω
Operating voltage: 6.5...20V DC
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NCP1075BAP130G NCP1076A-D.PDF
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.45A
Frequency: 117...143kHz
Mounting: SMD
Case: DIP8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 16.8Ω
Operating voltage: 6.5...20V DC
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NCP4306AAAZZZADR2G ncp4306-d.pdf
NCP4306AAAZZZADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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NCP4306AADZZZADR2G ncp4306-d.pdf
NCP4306AADZZZADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
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NCP4306AAHZZZADR2G ncp4306-d.pdf
NCP4306AAHZZZADR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 3.5÷37VDC
Type of integrated circuit: PMIC
Output current: 2...7A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.5...37V DC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
FDPF2D3N10C fdp2d3n10c-d.pdf
FDPF2D3N10C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 157A
Pulsed drain current: 888A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+486.08 грн
5+368.28 грн
10+329.74 грн
25+299.76 грн
В кошику  од. на суму  грн.
MC1496BDR2G mc1496-d.pdf
MC1496BDR2G
Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: modulator RF; 300MHz; SO14
Type of integrated circuit: modulator RF
Frequency: 300MHz
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
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Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NJW0302G NJW0281_NJW0302.pdf
NJW0302G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 15A; 150W; TO3P
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 150W
Case: TO3P
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+225.25 грн
10+168.72 грн
20+146.46 грн
30+135.32 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
NTMFS6H800NLT1G ntmfs6h800nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 224A; Idm: 900A; 107W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 224A
Pulsed drain current: 900A
Power dissipation: 107W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1500 шт
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NTMFS6H800NT1G ntmfs6h800n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 203A; Idm: 900A; 100W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 203A
Pulsed drain current: 900A
Power dissipation: 100W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 85nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1500 шт
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MJE182G MJE172G.PDF
MJE182G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 390 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
6+78.40 грн
10+46.76 грн
50+36.57 грн
100+32.89 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
NVMFS6H824NLT1G nvmfs6h824nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H824NLWFT1G nvmfs6h824nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 110A; Idm: 722A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 110A
Pulsed drain current: 722A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H824NT1G nvmfs6h824n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS6H824NWFT1G nvmfs6h824n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 103A; Idm: 626A; 58W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 103A
Pulsed drain current: 626A
Power dissipation: 58W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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74VHC139M FAIRS03250-1.pdf?t.download=true&u=5oefqw
74VHC139M
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 2; SMD; SO16; VHC; VHC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: tube
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Family: VHC
на замовлення 214 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+51.65 грн
11+39.91 грн
48+31.95 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
MC74VHC1G07DFT1G mc74vhc1g07-d.pdf
MC74VHC1G07DFT1GMC74VHC1G07DFT1G
MC74VHC1G07DFT1GMC74VHC1G07DFT1G
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
на замовлення 2705 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.99 грн
43+10.19 грн
100+9.85 грн
250+9.51 грн
500+9.34 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
MC74VHC1G04DFT2G
MC74VHC1G04DFT2GMC74VHC1G04DFT2G
MC74VHC1G04DFT2GMC74VHC1G04DFT2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 1
Family: VHC
Kind of gate: NOT
на замовлення 1361 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
56+8.30 грн
73+5.91 грн
Мінімальне замовлення: 56 шт
В кошику  од. на суму  грн.
M74VHC1G135DTT1G M74VHC1G135DTT1G.pdf
M74VHC1G135DTT1G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 2...5.5V DC
Kind of input: with Schmitt trigger
Number of inputs: 2
Family: VHC
Kind of gate: NAND
на замовлення 1680 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
50+10.24 грн
60+7.37 грн
250+6.25 грн
1000+5.22 грн
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
MC74VHC1G02DTT1G mc74vhc1g02-d.pdf
MC74VHC1G02DTT1GMC74VHC1G02DTT1G
MC74VHC1G02DTT1GMC74VHC1G02DTT1G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: TSSOP5
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Family: VHC
Kind of gate: NOR
на замовлення 1560 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
63+7.38 грн
78+5.52 грн
250+4.75 грн
1000+4.21 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
MC74VHC1G01DFT1G mc74vhc1g01-d.pdf
MC74VHC1G01DFT1GMC74VHC1G01DFT1G
MC74VHC1G01DFT1GMC74VHC1G01DFT1G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Family: VHC
Kind of gate: NAND
на замовлення 1139 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
79+5.90 грн
91+4.73 грн
114+3.78 грн
500+3.20 грн
Мінімальне замовлення: 79 шт
В кошику  од. на суму  грн.
M74VHC1GT00DFT2G
M74VHC1GT00DFT2GM74VHC1GT00DFT2G
M74VHC1GT00DFT2GM74VHC1GT00DFT2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Technology: TTL
Mounting: SMD
Case: SC88A
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Number of inputs: 2
Family: VHC
Kind of gate: NAND
на замовлення 436 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
88+5.26 грн
112+3.84 грн
141+3.06 грн
Мінімальне замовлення: 88 шт
В кошику  од. на суму  грн.
MC74VHC1G14DFT1G-Q
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; Ch: 1; IN: 1; SMD; SC70-5
Type of integrated circuit: digital
Kind of integrated circuit: inverter; Schmitt trigger
Number of channels: 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Quiescent current: 1µA
Family: VHC
на замовлення 27000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
18000+2.20 грн
Мінімальне замовлення: 18000 шт
В кошику  од. на суму  грн.
FSBB30CH60C FSBB30CH60C.pdf
FSBB30CH60C
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; Motion SPM® 3; SPMEC-027
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: SPMEC-027
Output current: 30A
Number of channels: 6
Mounting: THT
Power dissipation: 106W
Operating temperature: -40...150°C
Technology: Motion SPM® 3
Operating voltage: 13.5...16.5/0...400V DC
Topology: IGBT three-phase bridge
Collector-emitter voltage: 600V
на замовлення 41 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1593.83 грн
В кошику  од. на суму  грн.
BD438STU BD438STU.pdf
BD438STU
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 4A; 36W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: TO126ISO
Mounting: THT
Kind of package: tube
Frequency: 3MHz
товару немає в наявності
В кошику  од. на суму  грн.
DTC114TM3T5G DTC114T-D.PDF
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Current gain: 160...350
товару немає в наявності
В кошику  од. на суму  грн.
NCV272DMR2G tlv271-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: Micro8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 2nA
Input offset current: 0.5nA
товару немає в наявності
В кошику  од. на суму  грн.
NCV272DR2G tlv271-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; ±1.35÷18VDC,2.7÷36VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.35...18V DC; 2.7...36V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 2.4V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 2nA
Input offset current: 0.5nA
товару немає в наявності
В кошику  од. на суму  грн.
NCP154MX280270TAG NCP154-D.PDF
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; XDFN8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Case: XDFN8
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Number of channels: 2
товару немає в наявності
В кошику  од. на суму  грн.
CAT25020VI-GT3 CAT25010-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
товару немає в наявності
В кошику  од. на суму  грн.
CAT25020YI-GT3 CAT25010-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 2kb EEPROM
Clock frequency: 20MHz
Memory organisation: 256x8bit
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NTBG1000N170M1 NTBG1000N170M1-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W
Mounting: SMD
Case: D2PAK-7
Kind of package: reel; tape
Pulsed drain current: 14.6A
Power dissipation: 25W
Gate charge: 14nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.7kV
Type of transistor: N-MOSFET
Gate-source voltage: -5...20V
On-state resistance: 1.8Ω
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
NVBG1000N170M1 nvbg1000n170m1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3A; Idm: 14.6A; 25W
Polarisation: unipolar
Case: D2PAK-7
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 14nC
On-state resistance: 1.8Ω
Drain current: 3A
Pulsed drain current: 14.6A
Power dissipation: 25W
Drain-source voltage: 1.7kV
товару немає в наявності
В кошику  од. на суму  грн.
S100 ss19-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.85V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 0.1kV
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
NC7SZ08M5X description NC7SZ08.pdf
NC7SZ08M5X
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT23-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: reel; tape
Case: SOT23-5
Number of channels: single; 1
Supply voltage: 1.65...5.5V DC
на замовлення 1893 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
125+3.69 грн
132+3.25 грн
148+2.91 грн
165+2.60 грн
183+2.35 грн
250+2.24 грн
500+2.14 грн
Мінімальне замовлення: 125 шт
В кошику  од. на суму  грн.
NC7SZ08P5X NC7SZ08.pdf
NC7SZ08P5X
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Supply voltage: 1.65...5.5V DC
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
84+5.53 грн
114+3.77 грн
132+3.25 грн
161+2.67 грн
183+2.35 грн
3000+2.06 грн
Мінімальне замовлення: 84 шт
В кошику  од. на суму  грн.
MM3Z15VT1G MM3ZxxT1G.PDF
MM3Z15VT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
на замовлення 3792 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
46+10.15 грн
62+6.94 грн
91+4.71 грн
108+4.00 грн
150+3.67 грн
500+2.91 грн
1000+2.48 грн
1500+2.29 грн
3000+2.01 грн
Мінімальне замовлення: 46 шт
В кошику  од. на суму  грн.
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