Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FCD5N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDD5N60NZTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±25V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2440 шт: термін постачання 21-30 дні (днів) |
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FQD5N60CTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FQI5N60CTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.6A Pulsed drain current: 18A Power dissipation: 100W Case: I2PAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FQU5N60CTU | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.8A Pulsed drain current: 11.2A Power dissipation: 49W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FCH25N60N | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 75A Power dissipation: 216W Case: TO247 Gate-source voltage: ±30V On-state resistance: 108mΩ Mounting: THT Gate charge: 57nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MOC3051M | ONSEMI |
![]() ![]() Description: Optotriac; 5.3kV; Uout: 600V; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Output voltage: 600V Kind of output: without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT |
на замовлення 728 шт: термін постачання 21-30 дні (днів) |
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2N3773G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3 Power dissipation: 150W Kind of package: in-tray Case: TO3 Mounting: THT Frequency: 200kHz Collector-emitter voltage: 160V Collector current: 16A Type of transistor: NPN Polarisation: bipolar |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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74VHC245M | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: tube Quiescent current: 40µA Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74VHC245MTCX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Manufacturer series: VHC |
на замовлення 887 шт: термін постачання 21-30 дні (днів) |
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74VHC245MX | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20-W Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: VHC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FCD380N60E | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLV431ALPG | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: bulk Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLV431ALPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 1681 шт: термін постачання 21-30 дні (днів) |
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TLV431ASN1T1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLV431ASNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 2585 шт: термін постачання 21-30 дні (днів) |
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TLV431BLPRAG | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 1151 шт: термін постачання 21-30 дні (днів) |
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TLV431BSN1T1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±1% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
на замовлення 1763 шт: термін постачання 21-30 дні (днів) |
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TLV431BSNT1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.5% Mounting: SMD Case: TSOP5 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLV431CSN1T1G | ONSEMI |
![]() Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 1.24V Tolerance: ±0.2% Mounting: SMD Case: SOT23 Operating temperature: -40...85°C Operating voltage: 1.24...16V Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NCP45521IMNTWG-H | ONSEMI |
![]() Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8 Case: DFN8 Supply voltage: 3...5.5V DC On-state resistance: 9.5/22.5mΩ Output current: 10.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Kind of package: reel; tape Control voltage: 0.5...13.5V DC Kind of integrated circuit: high-side Mounting: SMD |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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BD237G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 2A Power dissipation: 25W Case: TO225 Mounting: THT Kind of package: bulk Current gain: 40 Frequency: 3MHz |
на замовлення 481 шт: термін постачання 21-30 дні (днів) |
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FIN1001M5X | ONSEMI |
![]() Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC Supply voltage: 3.6V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape Technology: LVDS Kind of integrated circuit: differential; line driver; translator Mounting: SMD Operating temperature: -40...125°C Case: SOT23-5 |
на замовлення 5792 шт: термін постачання 21-30 дні (днів) |
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2N6517BU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 40Hz...200MHz Collector-emitter voltage: 350V Current gain: 20...200 Collector current: 0.5A |
на замовлення 6760 шт: термін постачання 21-30 дні (днів) |
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2N6517TA | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 40...200MHz Collector-emitter voltage: 350V Current gain: 30...200 Collector current: 0.5A |
на замовлення 1703 шт: термін постачання 21-30 дні (днів) |
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2N6520TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 40...200MHz Collector-emitter voltage: 350V Current gain: 30...200 Collector current: 0.5A |
на замовлення 767 шт: термін постачання 21-30 дні (днів) |
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MMUN2234LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
на замовлення 3965 шт: термін постачання 21-30 дні (днів) |
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FJPF13007H2TU | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP Case: TO220FP Frequency: 4MHz Collector-emitter voltage: 400V Current gain: 8...60 Collector current: 8A Type of transistor: NPN Power dissipation: 40W Polarisation: bipolar Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MUR1620CTG | ONSEMI |
![]() Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 16A Max. forward impulse current: 100A |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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74ACT04MTCX | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74ACT04SC | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Family: ACT Supply voltage: 4.5...5.5V DC Quiescent current: 20µA Kind of package: tube Operating temperature: -40...85°C |
на замовлення 225 шт: термін постачання 21-30 дні (днів) |
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74ACT04SCX | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Family: ACT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C |
на замовлення 1736 шт: термін постачання 21-30 дні (днів) |
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MC74ACT04DR2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: ACT Number of inputs: 1 Kind of gate: NOT |
на замовлення 134 шт: термін постачання 21-30 дні (днів) |
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MC74ACT04DTR2G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Family: ACT Number of inputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCH104N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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FCH104N60F-F085 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Power dissipation: 357W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.104Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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AFGB40T65SQDN | ONSEMI |
![]() Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 119W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: SMD Gate charge: 76nC Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TIP122G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 2W |
на замовлення 542 шт: термін постачання 21-30 дні (днів) |
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MBR40250G | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 250V Load current: 40A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.86V Max. load current: 80A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
на замовлення 68 шт: термін постачання 21-30 дні (днів) |
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MBR40250TG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 250V Load current: 40A Semiconductor structure: single diode Case: TO220-3 Max. forward voltage: 0.86V Max. load current: 80A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
на замовлення 385 шт: термін постачання 21-30 дні (днів) |
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MJ11015G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 30A Power dissipation: 200W Case: TO3 Mounting: THT Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDP8N50NZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 4.8A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDA28N50 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Pulsed drain current: 112A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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1N5359BG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 709 шт: термін постачання 21-30 дні (днів) |
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1N5359BRLG | ONSEMI |
![]() ![]() Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 24V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 3432 шт: термін постачання 21-30 дні (днів) |
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FST3253MTCX | ONSEMI |
![]() Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2 Type of integrated circuit: analog switch Kind of integrated circuit: bus switch; demultiplexer; multiplexer Number of channels: 2 Technology: TTL Mounting: SMD Case: TSSOP16 Supply voltage: 4...5.5V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 3µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33151DG | ONSEMI |
![]() Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP |
на замовлення 223 шт: термін постачання 21-30 дні (днів) |
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MC33151PG | ONSEMI |
![]() ![]() Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Operating temperature: -40...85°C Case: DIP8 Supply voltage: 6.5...18V DC Output voltage: 0.8...11.2V Output current: -1.5...1.5A Mounting: THT Impulse rise time: 30ns Pulse fall time: 30ns Number of channels: 2 Kind of output: inverting Kind of package: tube Protection: undervoltage UVP Kind of integrated circuit: MOSFET gate driver |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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MOC3022VM | ONSEMI |
![]() Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM |
на замовлення 703 шт: термін постачання 21-30 дні (днів) |
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ES1J | ONSEMI |
![]() Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A Type of diode: rectifying Case: SMA Capacitance: 8pF Max. off-state voltage: 0.6kV Max. forward voltage: 1.7V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Leakage current: 0.1mA Power dissipation: 1.47W Kind of package: reel; tape Features of semiconductor devices: fast switching Mounting: SMD |
на замовлення 7671 шт: термін постачання 21-30 дні (днів) |
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LM833DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 15MHz; Ch: 2; SO8; ±5÷18VDC,10÷36VDC Type of integrated circuit: operational amplifier Bandwidth: 15MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 7V/μs Operating temperature: -40...85°C Input offset voltage: 0.3mV Voltage supply range: ± 5...18V DC; 10...36V DC Kind of package: reel; tape Power dissipation: 0.5W |
на замовлення 1595 шт: термін постачання 21-30 дні (днів) |
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2N5550TA | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 50...200 Mounting: THT Kind of package: Ammo Pack Frequency: 100...300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N5550TFR | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 50...200 Mounting: THT Kind of package: reel; tape Frequency: 100...300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N914BWS | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Case: SOD323F Kind of package: reel; tape |
на замовлення 479 шт: термін постачання 21-30 дні (днів) |
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1N914BWT | ONSEMI |
![]() Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.3A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SOD523F Max. forward voltage: 1V Kind of package: reel; tape Power dissipation: 0.2W Leakage current: 5µA Capacitance: 4pF |
на замовлення 4930 шт: термін постачання 21-30 дні (днів) |
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NCP81161MNTBG | ONSEMI |
![]() Description: IC: driver; buck; high-side,low-side,gate driver; DFN8 Operating temperature: -10...125°C Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Topology: buck Mounting: SMD Case: DFN8 Supply voltage: 4.5...13.2V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HCT245ADTG | ONSEMI |
![]() Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Family: HCT Kind of package: tube Manufacturer series: HCT Technology: CMOS; TTL Operating temperature: -55...125°C |
на замовлення 322 шт: термін постачання 21-30 дні (днів) |
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MC74HCT245ADTR2G | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Kind of package: reel; tape Manufacturer series: HCT Technology: CMOS; TTL Quiescent current: 160µA Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74HCT245ADWG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20 Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Case: SO20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Kind of package: tube Manufacturer series: HCT Technology: CMOS; TTL Quiescent current: 160µA Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
MC74HCT245ADWR2G | ONSEMI |
![]() Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus transceiver; octal Number of channels: 8 Mounting: SMD Case: SOIC20 Supply voltage: 4.5...5.5V DC Kind of output: 3-state Family: HCT Kind of package: reel; tape Manufacturer series: HCT Technology: CMOS; TTL Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. |
FCD5N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FDD5N60NZTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2440 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.18 грн |
8+ | 50.38 грн |
22+ | 41.11 грн |
60+ | 38.87 грн |
500+ | 37.75 грн |
FQD5N60CTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FQI5N60CTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.6A; Idm: 18A; 100W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.6A
Pulsed drain current: 18A
Power dissipation: 100W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FQU5N60CTU |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.8A; Idm: 11.2A; 49W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.8A
Pulsed drain current: 11.2A
Power dissipation: 49W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
FCH25N60N |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 75A
Power dissipation: 216W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 75A; 216W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 75A
Power dissipation: 216W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 108mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
MOC3051M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Output voltage: 600V
Kind of output: without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
на замовлення 728 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 73.26 грн |
11+ | 36.25 грн |
29+ | 31.02 грн |
78+ | 29.30 грн |
500+ | 28.48 грн |
2N3773G | ![]() |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Power dissipation: 150W
Kind of package: in-tray
Case: TO3
Mounting: THT
Frequency: 200kHz
Collector-emitter voltage: 160V
Collector current: 16A
Type of transistor: NPN
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 16A; 150W; TO3
Power dissipation: 150W
Kind of package: in-tray
Case: TO3
Mounting: THT
Frequency: 200kHz
Collector-emitter voltage: 160V
Collector current: 16A
Type of transistor: NPN
Polarisation: bipolar
на замовлення 70 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 488.64 грн |
3+ | 361.79 грн |
7+ | 341.61 грн |
74VHC245M |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: tube
Quiescent current: 40µA
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
74VHC245MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Manufacturer series: VHC
на замовлення 887 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 97.40 грн |
10+ | 45.30 грн |
32+ | 28.33 грн |
86+ | 26.76 грн |
500+ | 25.79 грн |
74VHC245MX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20-W; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: VHC
товару немає в наявності
В кошику
од. на суму грн.
FCD380N60E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
TLV431ALPG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; bulk; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: bulk
Maximum output current: 20mA
товару немає в наявності
В кошику
од. на суму грн.
TLV431ALPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 1681 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.84 грн |
12+ | 33.64 грн |
27+ | 33.49 грн |
50+ | 32.38 грн |
73+ | 31.66 грн |
100+ | 31.17 грн |
250+ | 30.45 грн |
TLV431ASN1T1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
товару немає в наявності
В кошику
од. на суму грн.
TLV431ASNT1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 2585 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 46.69 грн |
15+ | 26.09 грн |
25+ | 21.23 грн |
63+ | 14.20 грн |
171+ | 13.38 грн |
1000+ | 12.93 грн |
TLV431BLPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 1151 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 119.94 грн |
9+ | 45.75 грн |
24+ | 37.38 грн |
65+ | 35.36 грн |
250+ | 34.98 грн |
500+ | 34.01 грн |
TLV431BSN1T1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±1%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±1%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
на замовлення 1763 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 41.86 грн |
16+ | 24.59 грн |
25+ | 20.71 грн |
50+ | 18.24 грн |
78+ | 11.36 грн |
213+ | 10.76 грн |
TLV431BSNT1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.5%; TSOP5; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.5%
Mounting: SMD
Case: TSOP5
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
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TLV431CSN1T1G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.24V; ±0.2%; SOT23; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 1.24V
Tolerance: ±0.2%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 1.24...16V
Kind of package: reel; tape
Maximum output current: 20mA
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NCP45521IMNTWG-H |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 9.5/22.5mΩ
Output current: 10.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Case: DFN8
Supply voltage: 3...5.5V DC
On-state resistance: 9.5/22.5mΩ
Output current: 10.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Kind of package: reel; tape
Control voltage: 0.5...13.5V DC
Kind of integrated circuit: high-side
Mounting: SMD
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 138.46 грн |
BD237G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 2A; 25W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 2A
Power dissipation: 25W
Case: TO225
Mounting: THT
Kind of package: bulk
Current gain: 40
Frequency: 3MHz
на замовлення 481 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.65 грн |
8+ | 50.38 грн |
25+ | 43.36 грн |
26+ | 33.94 грн |
71+ | 32.07 грн |
FIN1001M5X |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Supply voltage: 3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: LVDS
Kind of integrated circuit: differential; line driver; translator
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
Category: Interfaces others - integrated circuits
Description: IC: digital; differential,line driver,translator; LVDS; 3.6VDC
Supply voltage: 3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Technology: LVDS
Kind of integrated circuit: differential; line driver; translator
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
на замовлення 5792 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 125.58 грн |
10+ | 78.49 грн |
18+ | 49.34 грн |
49+ | 46.34 грн |
250+ | 44.85 грн |
2N6517BU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 40Hz...200MHz
Collector-emitter voltage: 350V
Current gain: 20...200
Collector current: 0.5A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 40Hz...200MHz
Collector-emitter voltage: 350V
Current gain: 20...200
Collector current: 0.5A
на замовлення 6760 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 3.83 грн |
500+ | 3.65 грн |
640+ | 3.63 грн |
2000+ | 3.48 грн |
2N6517TA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
на замовлення 1703 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.93 грн |
32+ | 12.03 грн |
41+ | 9.27 грн |
100+ | 6.26 грн |
206+ | 4.29 грн |
500+ | 4.24 грн |
565+ | 4.06 грн |
2N6520TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 350V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 40...200MHz
Collector-emitter voltage: 350V
Current gain: 30...200
Collector current: 0.5A
на замовлення 767 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 17.71 грн |
32+ | 12.03 грн |
100+ | 7.57 грн |
215+ | 4.11 грн |
590+ | 3.89 грн |
MMUN2234LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
на замовлення 3965 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.05 грн |
77+ | 4.86 грн |
124+ | 3.03 грн |
500+ | 2.27 грн |
807+ | 1.09 грн |
2219+ | 1.03 грн |
FJPF13007H2TU |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP
Case: TO220FP
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 8...60
Collector current: 8A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 8A; 40W; TO220FP
Case: TO220FP
Frequency: 4MHz
Collector-emitter voltage: 400V
Current gain: 8...60
Collector current: 8A
Type of transistor: NPN
Power dissipation: 40W
Polarisation: bipolar
Kind of package: tube
Mounting: THT
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MUR1620CTG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; tube; Ifsm: 100A; TO220AB
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 16A
Max. forward impulse current: 100A
на замовлення 82 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 130.41 грн |
10+ | 106.14 грн |
11+ | 80.73 грн |
31+ | 76.24 грн |
74ACT04MTCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
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74ACT04SC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Family: ACT
Supply voltage: 4.5...5.5V DC
Quiescent current: 20µA
Kind of package: tube
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Family: ACT
Supply voltage: 4.5...5.5V DC
Quiescent current: 20µA
Kind of package: tube
Operating temperature: -40...85°C
на замовлення 225 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 42.66 грн |
14+ | 28.26 грн |
35+ | 25.56 грн |
55+ | 23.99 грн |
110+ | 23.25 грн |
74ACT04SCX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; ACT
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Family: ACT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
на замовлення 1736 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 40.25 грн |
12+ | 31.99 грн |
25+ | 27.06 грн |
38+ | 23.17 грн |
104+ | 21.90 грн |
500+ | 21.08 грн |
MC74ACT04DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: ACT
Number of inputs: 1
Kind of gate: NOT
на замовлення 134 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.50 грн |
12+ | 31.25 грн |
15+ | 25.71 грн |
56+ | 15.70 грн |
100+ | 14.28 грн |
MC74ACT04DTR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: ACT
Number of inputs: 1
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FCH104N60F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 75 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 528.08 грн |
3+ | 337.87 грн |
8+ | 319.93 грн |
FCH104N60F-F085 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 357W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 357W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.104Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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AFGB40T65SQDN |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 119W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: SMD
Gate charge: 76nC
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
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TIP122G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 2W
на замовлення 542 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.79 грн |
10+ | 43.73 грн |
35+ | 25.71 грн |
95+ | 24.29 грн |
250+ | 23.77 грн |
500+ | 23.40 грн |
MBR40250G |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220AC; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 68 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 133.63 грн |
10+ | 93.44 грн |
11+ | 82.97 грн |
29+ | 78.49 грн |
MBR40250TG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 250V; 40A; TO220-3; Ufmax: 0.86V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 250V
Load current: 40A
Semiconductor structure: single diode
Case: TO220-3
Max. forward voltage: 0.86V
Max. load current: 80A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 385 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 173.08 грн |
10+ | 91.94 грн |
27+ | 86.71 грн |
100+ | 85.96 грн |
250+ | 82.97 грн |
MJ11015G | ![]() |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 30A; 200W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 200W
Case: TO3
Mounting: THT
Kind of package: in-tray
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FDP8N50NZ |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4.8A; 130W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4.8A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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FDA28N50 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 337.30 грн |
5+ | 202.57 грн |
12+ | 191.36 грн |
1N5359BG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 709 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 33.81 грн |
19+ | 20.56 грн |
50+ | 16.67 грн |
69+ | 12.86 грн |
188+ | 12.18 грн |
250+ | 12.11 грн |
500+ | 11.66 грн |
1N5359BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 3432 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.22 грн |
17+ | 22.20 грн |
50+ | 18.39 грн |
71+ | 12.33 грн |
195+ | 11.66 грн |
1000+ | 11.51 грн |
2000+ | 11.21 грн |
FST3253MTCX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
Category: Decoders, multiplexers, switches
Description: IC: analog switch; bus switch,demultiplexer,multiplexer; Ch: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer; multiplexer
Number of channels: 2
Technology: TTL
Mounting: SMD
Case: TSSOP16
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 3µA
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MC33151DG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
на замовлення 223 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 163.42 грн |
10+ | 94.93 грн |
16+ | 57.56 грн |
42+ | 54.57 грн |
MC33151PG | ![]() |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Operating temperature: -40...85°C
Case: DIP8
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Mounting: THT
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Operating temperature: -40...85°C
Case: DIP8
Supply voltage: 6.5...18V DC
Output voltage: 0.8...11.2V
Output current: -1.5...1.5A
Mounting: THT
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 2
Kind of output: inverting
Kind of package: tube
Protection: undervoltage UVP
Kind of integrated circuit: MOSFET gate driver
на замовлення 78 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 155.36 грн |
5+ | 91.94 грн |
10+ | 82.97 грн |
14+ | 63.54 грн |
38+ | 60.55 грн |
MOC3022VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; triac; DIP6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
на замовлення 703 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.16 грн |
13+ | 29.97 грн |
46+ | 19.29 грн |
125+ | 18.24 грн |
500+ | 17.87 грн |
ES1J |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Case: SMA
Capacitance: 8pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 35ns; SMA; Ufmax: 1.7V; Ifsm: 30A
Type of diode: rectifying
Case: SMA
Capacitance: 8pF
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.7V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Mounting: SMD
на замовлення 7671 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 22.54 грн |
25+ | 14.95 грн |
50+ | 11.14 грн |
100+ | 9.87 грн |
120+ | 7.33 грн |
330+ | 6.88 грн |
1000+ | 6.80 грн |
5000+ | 6.65 грн |
LM833DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; SO8; ±5÷18VDC,10÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.3mV
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Power dissipation: 0.5W
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; SO8; ±5÷18VDC,10÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 0.3mV
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Power dissipation: 0.5W
на замовлення 1595 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 37.84 грн |
17+ | 22.72 грн |
19+ | 19.81 грн |
100+ | 12.78 грн |
106+ | 8.30 грн |
289+ | 7.85 грн |
2N5550TA |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100...300MHz
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2N5550TFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: reel; tape
Frequency: 100...300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 50...200
Mounting: THT
Kind of package: reel; tape
Frequency: 100...300MHz
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1N914BWS |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; SOD323F; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: SOD323F
Kind of package: reel; tape
на замовлення 479 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 6.88 грн |
95+ | 3.96 грн |
1N914BWT |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523F
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Leakage current: 5µA
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOD523F; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOD523F
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Leakage current: 5µA
Capacitance: 4pF
на замовлення 4930 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 6.88 грн |
120+ | 3.14 грн |
153+ | 2.45 грн |
500+ | 1.98 грн |
572+ | 1.54 грн |
1572+ | 1.46 грн |
NCP81161MNTBG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Operating temperature: -10...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Mounting: SMD
Case: DFN8
Supply voltage: 4.5...13.2V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; buck; high-side,low-side,gate driver; DFN8
Operating temperature: -10...125°C
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: buck
Mounting: SMD
Case: DFN8
Supply voltage: 4.5...13.2V DC
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MC74HCT245ADTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Family: HCT
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS; TTL
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Family: HCT
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS; TTL
Operating temperature: -55...125°C
на замовлення 322 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 89.36 грн |
10+ | 48.14 грн |
25+ | 37.45 грн |
34+ | 26.01 грн |
94+ | 24.59 грн |
300+ | 23.62 грн |
MC74HCT245ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Quiescent current: 160µA
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Quiescent current: 160µA
Operating temperature: -55...125°C
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MC74HCT245ADWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS; TTL
Quiescent current: 160µA
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; SO20
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Kind of package: tube
Manufacturer series: HCT
Technology: CMOS; TTL
Quiescent current: 160µA
Operating temperature: -55...125°C
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MC74HCT245ADWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Family: HCT
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus transceiver,octal; Ch: 8; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus transceiver; octal
Number of channels: 8
Mounting: SMD
Case: SOIC20
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Family: HCT
Kind of package: reel; tape
Manufacturer series: HCT
Technology: CMOS; TTL
Operating temperature: -55...125°C
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од. на суму грн.