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74AC10SCX 74AC10SCX onsemi 74AC10%2C74ACT10.pdf Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74AC10SJX 74AC10SJX onsemi 74AC10%2C74ACT10.pdf Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
товару немає в наявності
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TN5D51A-R-HCC11-E TN5D51A-R-HCC11-E onsemi Description: IC REG BUCK 12V 5A TO220F5I5H-HB
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
товару немає в наявності
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TN8D51A-HB11-E TN8D51A-HB11-E onsemi TN8D51A.pdf Description: IC REG BUCK 12V 8A TO220F5I5H-HB
Packaging: Bulk
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -10°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
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TN8D41A-HB11-E TN8D41A-HB11-E onsemi TN8D41A.pdf Description: IC REG BUCK 5V 8A TO220FL
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TY40470R2 onsemi Description: IC SUPERVISOR ANA UNDERVOLT DET
Packaging: Bulk
Part Status: Active
товару немає в наявності
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NSS20500UW3TBG NSS20500UW3TBG onsemi nss20500uw3-d.pdf Description: TRANS PNP 20V 5A 3WDFN
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
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NSS20500UW3TBG NSS20500UW3TBG onsemi nss20500uw3-d.pdf Description: TRANS PNP 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
на замовлення 1391 шт:
термін постачання 21-31 дні (днів)
7+48.18 грн
10+31.09 грн
100+21.24 грн
500+15.69 грн
1000+14.29 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
2SK4065-DL-1EX 2SK4065-DL-1EX onsemi 2SK4065-D.PDF Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
на замовлення 3140 шт:
термін постачання 21-31 дні (днів)
124+178.78 грн
Мінімальне замовлення: 124
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2SK4084LS 2SK4084LS onsemi snyos15145-1 Description: 2SK4084LS - MOSFET, T14A, 500V,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
на замовлення 941 шт:
термін постачання 21-31 дні (днів)
214+107.86 грн
Мінімальне замовлення: 214
В кошику  од. на суму  грн.
2SK443-6-TB-E-ON onsemi Description: PNP/NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
на замовлення 18333 шт:
термін постачання 21-31 дні (днів)
3643+5.65 грн
Мінімальне замовлення: 3643
В кошику  од. на суму  грн.
2SK4067-N-TL-E onsemi 2SK4067-N-TL-E.pdf?t.download=true&u=axiww2 Description: NCH 4V DRIVE SERIES
Packaging: Bulk
Part Status: Active
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
2049+11.08 грн
Мінімальне замовлення: 2049
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2SK436-19-TB-E onsemi Description: NCH T-FET
Packaging: Bulk
Part Status: Active
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SI9936DY SI9936DY onsemi DS_261_SI9936DY.pdf description Description: MOSFET 2N-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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NTH4L067N65S3H NTH4L067N65S3H onsemi nth4l067n65s3h-d.pdf Description: SUPERFET3 FAST 67MOHM TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
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SZNSQA6V8AW5T2G SZNSQA6V8AW5T2G onsemi nsqa6v8aw5t2-d.pdf Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
3000+7.34 грн
6000+6.93 грн
9000+6.87 грн
75000+6.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SZNSQA6V8AW5T2G SZNSQA6V8AW5T2G onsemi nsqa6v8aw5t2-d.pdf Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 77774 шт:
термін постачання 21-31 дні (днів)
9+37.74 грн
14+23.04 грн
100+15.30 грн
500+11.04 грн
1000+9.95 грн
Мінімальне замовлення: 9
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NTMFD0D9N02P1E onsemi Description: IFET 25V 0.9 MOHM PQFN56MP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
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FDMS86263P-23507X onsemi Description: FET -150V 53.0 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
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2SA1770S-AN 2SA1770S-AN onsemi 2SA1770,2SC4614.pdf Description: TRANS PNP 160V 1.5A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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CNY173SVM CNY173SVM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)
7+48.98 грн
10+32.40 грн
100+23.59 грн
500+18.41 грн
1000+17.19 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CNY173SVM CNY173SVM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
7+50.59 грн
10+32.32 грн
100+21.40 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CAV25512YE-GT3 CAV25512YE-GT3 onsemi cav25512-d.pdf Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CAV25512YE-GT3 CAV25512YE-GT3 onsemi cav25512-d.pdf Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3252 шт:
термін постачання 21-31 дні (днів)
4+89.13 грн
10+78.95 грн
25+76.74 грн
50+71.65 грн
100+64.06 грн
250+63.87 грн
500+61.87 грн
1000+59.24 грн
Мінімальне замовлення: 4
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NDUL03N150CG NDUL03N150CG onsemi ena2218-d.pdf Description: MOSFET N-CH 1500V 2.5A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3P(L)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
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SB01-05C-TB-E SB01-05C-TB-E onsemi sb01-05c-d.pdf Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
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SB01-05C-TB-E SB01-05C-TB-E onsemi sb01-05c-d.pdf Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
на замовлення 1911 шт:
термін постачання 21-31 дні (днів)
8+40.15 грн
14+23.35 грн
100+14.84 грн
500+10.46 грн
1000+9.34 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
NSVDTC123JET1G NSVDTC123JET1G onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
3000+2.66 грн
6000+2.28 грн
9000+2.14 грн
15000+1.86 грн
21000+1.77 грн
30000+1.69 грн
75000+1.47 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
NSVDTC123JET1G NSVDTC123JET1G onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 101950 шт:
термін постачання 21-31 дні (днів)
24+13.65 грн
40+7.81 грн
100+4.86 грн
500+3.32 грн
1000+2.92 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
FW261-TL-E FW261-TL-E onsemi Description: NCH+NCH 4V DRIVE SERIES
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
2885+7.75 грн
Мінімальне замовлення: 2885
В кошику  од. на суму  грн.
MCH6661-TL-W MCH6661-TL-W onsemi ena2280-d.pdf Description: MOSFET 2N-CH 30V 1.8A SOT363
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MC100LVEP210FAG MC100LVEP210FAG onsemi mc100lvep210-d.pdf Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 2
Mounting Type: Surface Mount
Output: ECL, PECL
Type: Fanout Buffer (Distribution)
Input: ECL, HSTL, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.8V
Ratio - Input:Output: 1:5
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Frequency - Max: 3 GHz
на замовлення 14492 шт:
термін постачання 21-31 дні (днів)
22+1111.38 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
FQU1N80TU FQU1N80TU onsemi fqu1n80-d.pdf Description: MOSFET N-CH 800V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
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MMBT5401-D87Z MMBT5401-D87Z onsemi MMBT5401_Rev2014.pdf Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
товару немає в наявності
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MMBT5401-D87Z MMBT5401-D87Z onsemi MMBT5401_Rev2014.pdf Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
товару немає в наявності
В кошику  од. на суму  грн.
NCV97311MW50AR2G NCV97311MW50AR2G onsemi ncv97311a-d.pdf Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.1V ~ 18V
Frequency - Switching: 2MHz ~ 2.6MHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: 32-QFNW (5x5)
Voltage/Current - Output 1: 5V, 3A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Active
Number of Outputs: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+218.46 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NCV97311MW50AR2G NCV97311MW50AR2G onsemi ncv97311a-d.pdf Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.1V ~ 18V
Frequency - Switching: 2MHz ~ 2.6MHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: 32-QFNW (5x5)
Voltage/Current - Output 1: 5V, 3A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Active
Number of Outputs: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1+452.10 грн
10+391.12 грн
25+369.78 грн
100+300.76 грн
250+285.34 грн
500+256.04 грн
1000+212.39 грн
2500+201.77 грн
В кошику  од. на суму  грн.
SURS8205T3G-VF01 SURS8205T3G-VF01 onsemi MURS205T3-D.PDF Description: DIODE GEN PURP 50V 2A SMB
товару немає в наявності
В кошику  од. на суму  грн.
NVD5863NLT4G NVD5863NLT4G onsemi nvd5863nl-d.pdf Description: MOSFET N-CH 60V 14.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Qualification: AEC-Q101
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NVD5863NLT4G NVD5863NLT4G onsemi nvd5863nl-d.pdf Description: MOSFET N-CH 60V 14.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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NVD5806NT4G NVD5806NT4G onsemi ntd5806n-d.pdf Description: MOSFET N-CH 40V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVD5807NT4G NVD5807NT4G onsemi ntd5807n-d.pdf Description: MOSFET N-CH 40V 23A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NVD5807NT4G NVD5807NT4G onsemi ntd5807n-d.pdf Description: MOSFET N-CH 40V 23A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Qualification: AEC-Q101
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SVD5865NLT4G SVD5865NLT4G onsemi Description: MOSFET N-CH 60V 10A/46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
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NVD5802NT4G-TB01 NVD5802NT4G-TB01 onsemi ntd5802n-d.pdf Description: MOSFET N-CH 40V 16.4A/101A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Qualification: AEC-Q101
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SVD5806NT4G SVD5806NT4G onsemi Description: MOSFET N-CH 40V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
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NVD5863NLT4G-VF01 NVD5863NLT4G-VF01 onsemi Description: MOSFET N-CH 60V 14.9A/82A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Qualification: AEC-Q101
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NVD5802NT4G-VF01 NVD5802NT4G-VF01 onsemi ntd5802n-d.pdf Description: MOSFET N-CH 40V 16.4A/101A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Qualification: AEC-Q101
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LC70301W-UIH-H onsemi Final_PB20641.pdf Description: LC70301W -LOW POWER CONSUMPTION
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
267+83.01 грн
Мінімальне замовлення: 267
В кошику  од. на суму  грн.
LC88F52H0AU-CH-H LC88F52H0AU-CH-H onsemi SSCLS00469-1.pdf?t.download=true&u=5oefqw Description: MICROCONTROLLER, 16-BIT, FLASH,
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
42+563.85 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
LC709209FXE-01TBG LC709209FXE-01TBG onsemi lc709209f-d.pdf Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Fuel Gauge
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Part Status: Active
товару немає в наявності
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LC709209FXE-01TBG LC709209FXE-01TBG onsemi lc709209f-d.pdf Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Fuel Gauge
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Part Status: Active
на замовлення 863 шт:
термін постачання 21-31 дні (днів)
2+272.22 грн
10+167.65 грн
25+143.03 грн
100+108.02 грн
250+95.15 грн
500+87.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NCD57252DWR2G NCD57252DWR2G onsemi ncd57252-d.pdf Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
1000+116.40 грн
2000+107.87 грн
5000+104.50 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
NCD57252DWR2G NCD57252DWR2G onsemi ncd57252-d.pdf Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 13547 шт:
термін постачання 21-31 дні (днів)
2+232.07 грн
10+200.59 грн
25+189.61 грн
100+146.32 грн
250+131.29 грн
500+126.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NVTYS005N06CLTWG NVTYS005N06CLTWG onsemi nvtys005n06cl-d.pdf Description: T6 60V N-CH LL IN LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Qualification: AEC-Q101
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NCP45790IMN24RTWG NCP45790IMN24RTWG onsemi ncp45790-d.pdf Description: SOLITUDE 790 MCM
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 5.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 14-DFN (4x4)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Part Status: Active
на замовлення 19289 шт:
термін постачання 21-31 дні (днів)
1+380.63 грн
10+238.40 грн
25+205.07 грн
100+157.12 грн
250+139.76 грн
500+129.08 грн
1000+119.86 грн
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NCP435FCT2G NCP435FCT2G onsemi ncp435-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.96x0.96)
Part Status: Last Time Buy
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NCP45750IMN24TWG onsemi Description: 750 MCM
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
2+242.51 грн
10+210.25 грн
25+198.79 грн
100+161.70 грн
250+153.41 грн
500+137.65 грн
1000+114.19 грн
Мінімальне замовлення: 2
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NCP45760IMN24RTWG NCP45760IMN24RTWG onsemi ncp45760-d.pdf Description: 760 MCM
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 17mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
на замовлення 798 шт:
термін постачання 21-31 дні (днів)
2+233.68 грн
10+142.59 грн
25+121.10 грн
100+90.89 грн
250+79.70 грн
500+72.83 грн
Мінімальне замовлення: 2
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NCP4625HSN33T1G NCP4625HSN33T1G onsemi NCP4625-D.PDF Description: IC REG LINEAR 3.3V 300MA SOT23-5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.85V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 180480 шт:
термін постачання 21-31 дні (днів)
784+29.21 грн
Мінімальне замовлення: 784
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74AC10SCX 74AC10%2C74ACT10.pdf
74AC10SCX
Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74AC10SJX 74AC10%2C74ACT10.pdf
74AC10SJX
Виробник: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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TN5D51A-R-HCC11-E
TN5D51A-R-HCC11-E
Виробник: onsemi
Description: IC REG BUCK 12V 5A TO220F5I5H-HB
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
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TN8D51A-HB11-E TN8D51A.pdf
TN8D51A-HB11-E
Виробник: onsemi
Description: IC REG BUCK 12V 8A TO220F5I5H-HB
Packaging: Bulk
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 8A
Operating Temperature: -10°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
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TN8D41A-HB11-E TN8D41A.pdf
TN8D41A-HB11-E
Виробник: onsemi
Description: IC REG BUCK 5V 8A TO220FL
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TY40470R2
Виробник: onsemi
Description: IC SUPERVISOR ANA UNDERVOLT DET
Packaging: Bulk
Part Status: Active
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NSS20500UW3TBG nss20500uw3-d.pdf
NSS20500UW3TBG
Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
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NSS20500UW3TBG nss20500uw3-d.pdf
NSS20500UW3TBG
Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
на замовлення 1391 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.18 грн
10+31.09 грн
100+21.24 грн
500+15.69 грн
1000+14.29 грн
Мінімальне замовлення: 7
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2SK4065-DL-1EX 2SK4065-D.PDF
2SK4065-DL-1EX
Виробник: onsemi
Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Supplier Device Package: TO-263-2
Part Status: Active
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
на замовлення 3140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
124+178.78 грн
Мінімальне замовлення: 124
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2SK4084LS snyos15145-1
2SK4084LS
Виробник: onsemi
Description: 2SK4084LS - MOSFET, T14A, 500V,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Supplier Device Package: TO-220FI(LS)
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
на замовлення 941 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
214+107.86 грн
Мінімальне замовлення: 214
В кошику  од. на суму  грн.
2SK443-6-TB-E-ON
Виробник: onsemi
Description: PNP/NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
на замовлення 18333 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3643+5.65 грн
Мінімальне замовлення: 3643
В кошику  од. на суму  грн.
2SK4067-N-TL-E 2SK4067-N-TL-E.pdf?t.download=true&u=axiww2
Виробник: onsemi
Description: NCH 4V DRIVE SERIES
Packaging: Bulk
Part Status: Active
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2049+11.08 грн
Мінімальне замовлення: 2049
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2SK436-19-TB-E
Виробник: onsemi
Description: NCH T-FET
Packaging: Bulk
Part Status: Active
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SI9936DY description DS_261_SI9936DY.pdf
SI9936DY
Виробник: onsemi
Description: MOSFET 2N-CH 30V 5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
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NTH4L067N65S3H nth4l067n65s3h-d.pdf
NTH4L067N65S3H
Виробник: onsemi
Description: SUPERFET3 FAST 67MOHM TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
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SZNSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
SZNSQA6V8AW5T2G
Виробник: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 75000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.34 грн
6000+6.93 грн
9000+6.87 грн
75000+6.38 грн
Мінімальне замовлення: 3000
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SZNSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
SZNSQA6V8AW5T2G
Виробник: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 77774 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+37.74 грн
14+23.04 грн
100+15.30 грн
500+11.04 грн
1000+9.95 грн
Мінімальне замовлення: 9
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NTMFD0D9N02P1E
Виробник: onsemi
Description: IFET 25V 0.9 MOHM PQFN56MP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 1.04W (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
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FDMS86263P-23507X
Виробник: onsemi
Description: FET -150V 53.0 MOHM PQFN56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
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2SA1770S-AN 2SA1770,2SC4614.pdf
2SA1770S-AN
Виробник: onsemi
Description: TRANS PNP 160V 1.5A 3NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 1 W
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CNY173SVM cny17f4m-d.pdf
CNY173SVM
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 1725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+48.98 грн
10+32.40 грн
100+23.59 грн
500+18.41 грн
1000+17.19 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CNY173SVM cny17f4m-d.pdf
CNY173SVM
Виробник: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.59 грн
10+32.32 грн
100+21.40 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CAV25512YE-GT3 cav25512-d.pdf
CAV25512YE-GT3
Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CAV25512YE-GT3 cav25512-d.pdf
CAV25512YE-GT3
Виробник: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 3252 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.13 грн
10+78.95 грн
25+76.74 грн
50+71.65 грн
100+64.06 грн
250+63.87 грн
500+61.87 грн
1000+59.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NDUL03N150CG ena2218-d.pdf
NDUL03N150CG
Виробник: onsemi
Description: MOSFET N-CH 1500V 2.5A TO3P
Packaging: Tube
Package / Case: TO-3PL
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Supplier Device Package: TO-3P(L)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
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SB01-05C-TB-E sb01-05c-d.pdf
SB01-05C-TB-E
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
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SB01-05C-TB-E sb01-05c-d.pdf
SB01-05C-TB-E
Виробник: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
на замовлення 1911 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+40.15 грн
14+23.35 грн
100+14.84 грн
500+10.46 грн
1000+9.34 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
NSVDTC123JET1G dtc123j-d.pdf
NSVDTC123JET1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.66 грн
6000+2.28 грн
9000+2.14 грн
15000+1.86 грн
21000+1.77 грн
30000+1.69 грн
75000+1.47 грн
Мінімальне замовлення: 3000
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NSVDTC123JET1G dtc123j-d.pdf
NSVDTC123JET1G
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 101950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
24+13.65 грн
40+7.81 грн
100+4.86 грн
500+3.32 грн
1000+2.92 грн
Мінімальне замовлення: 24
В кошику  од. на суму  грн.
FW261-TL-E
FW261-TL-E
Виробник: onsemi
Description: NCH+NCH 4V DRIVE SERIES
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2885+7.75 грн
Мінімальне замовлення: 2885
В кошику  од. на суму  грн.
MCH6661-TL-W ena2280-d.pdf
MCH6661-TL-W
Виробник: onsemi
Description: MOSFET 2N-CH 30V 1.8A SOT363
товару немає в наявності
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MC100LVEP210FAG mc100lvep210-d.pdf
MC100LVEP210FAG
Виробник: onsemi
Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Packaging: Bulk
Package / Case: 32-LQFP
Number of Circuits: 2
Mounting Type: Surface Mount
Output: ECL, PECL
Type: Fanout Buffer (Distribution)
Input: ECL, HSTL, LVDS, PECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.375V ~ 3.8V
Ratio - Input:Output: 1:5
Differential - Input:Output: Yes/Yes
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Frequency - Max: 3 GHz
на замовлення 14492 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+1111.38 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
FQU1N80TU fqu1n80-d.pdf
FQU1N80TU
Виробник: onsemi
Description: MOSFET N-CH 800V 1A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
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MMBT5401-D87Z MMBT5401_Rev2014.pdf
MMBT5401-D87Z
Виробник: onsemi
Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
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MMBT5401-D87Z MMBT5401_Rev2014.pdf
MMBT5401-D87Z
Виробник: onsemi
Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
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NCV97311MW50AR2G ncv97311a-d.pdf
NCV97311MW50AR2G
Виробник: onsemi
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.1V ~ 18V
Frequency - Switching: 2MHz ~ 2.6MHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: 32-QFNW (5x5)
Voltage/Current - Output 1: 5V, 3A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Active
Number of Outputs: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+218.46 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
NCV97311MW50AR2G ncv97311a-d.pdf
NCV97311MW50AR2G
Виробник: onsemi
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.1V ~ 18V
Frequency - Switching: 2MHz ~ 2.6MHz
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Supplier Device Package: 32-QFNW (5x5)
Voltage/Current - Output 1: 5V, 3A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
w/LED Driver: No
w/Supervisor: No
w/Sequencer: No
Part Status: Active
Number of Outputs: 4
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+452.10 грн
10+391.12 грн
25+369.78 грн
100+300.76 грн
250+285.34 грн
500+256.04 грн
1000+212.39 грн
2500+201.77 грн
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SURS8205T3G-VF01 MURS205T3-D.PDF
SURS8205T3G-VF01
Виробник: onsemi
Description: DIODE GEN PURP 50V 2A SMB
товару немає в наявності
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NVD5863NLT4G nvd5863nl-d.pdf
NVD5863NLT4G
Виробник: onsemi
Description: MOSFET N-CH 60V 14.9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Qualification: AEC-Q101
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NVD5863NLT4G nvd5863nl-d.pdf
NVD5863NLT4G
Виробник: onsemi
Description: MOSFET N-CH 60V 14.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVD5806NT4G ntd5806n-d.pdf
NVD5806NT4G
Виробник: onsemi
Description: MOSFET N-CH 40V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVD5807NT4G ntd5807n-d.pdf
NVD5807NT4G
Виробник: onsemi
Description: MOSFET N-CH 40V 23A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Qualification: AEC-Q101
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NVD5807NT4G ntd5807n-d.pdf
NVD5807NT4G
Виробник: onsemi
Description: MOSFET N-CH 40V 23A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Qualification: AEC-Q101
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SVD5865NLT4G
SVD5865NLT4G
Виробник: onsemi
Description: MOSFET N-CH 60V 10A/46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
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NVD5802NT4G-TB01 ntd5802n-d.pdf
NVD5802NT4G-TB01
Виробник: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Qualification: AEC-Q101
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SVD5806NT4G
SVD5806NT4G
Виробник: onsemi
Description: MOSFET N-CH 40V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Qualification: AEC-Q101
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NVD5863NLT4G-VF01
NVD5863NLT4G-VF01
Виробник: onsemi
Description: MOSFET N-CH 60V 14.9A/82A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Qualification: AEC-Q101
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NVD5802NT4G-VF01 ntd5802n-d.pdf
NVD5802NT4G-VF01
Виробник: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Qualification: AEC-Q101
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LC70301W-UIH-H Final_PB20641.pdf
Виробник: onsemi
Description: LC70301W -LOW POWER CONSUMPTION
Packaging: Bulk
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
267+83.01 грн
Мінімальне замовлення: 267
В кошику  од. на суму  грн.
LC88F52H0AU-CH-H SSCLS00469-1.pdf?t.download=true&u=5oefqw
LC88F52H0AU-CH-H
Виробник: onsemi
Description: MICROCONTROLLER, 16-BIT, FLASH,
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
42+563.85 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
LC709209FXE-01TBG lc709209f-d.pdf
LC709209FXE-01TBG
Виробник: onsemi
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Packaging: Tape & Reel (TR)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Fuel Gauge
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Part Status: Active
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LC709209FXE-01TBG lc709209f-d.pdf
LC709209FXE-01TBG
Виробник: onsemi
Description: BATTERY FUEL GAUGE FOR 1-CELL LI
Packaging: Cut Tape (CT)
Package / Case: 12-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Function: Fuel Gauge
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 12-WLCSP (1.48x1.91)
Part Status: Active
на замовлення 863 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+272.22 грн
10+167.65 грн
25+143.03 грн
100+108.02 грн
250+95.15 грн
500+87.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NCD57252DWR2G ncd57252-d.pdf
NCD57252DWR2G
Виробник: onsemi
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+116.40 грн
2000+107.87 грн
5000+104.50 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
NCD57252DWR2G ncd57252-d.pdf
NCD57252DWR2G
Виробник: onsemi
Description: DGTL ISO 5KV 2CH GATE DVR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 5000Vrms
Approval Agency: VDE
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 12ns, 10ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 80ns, 80ns
Pulse Width Distortion (Max): 10ns
Part Status: Active
Number of Channels: 2
Voltage - Output Supply: 32V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 13547 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+232.07 грн
10+200.59 грн
25+189.61 грн
100+146.32 грн
250+131.29 грн
500+126.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NVTYS005N06CLTWG nvtys005n06cl-d.pdf
NVTYS005N06CLTWG
Виробник: onsemi
Description: T6 60V N-CH LL IN LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta), 76W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 75µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Qualification: AEC-Q101
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NCP45790IMN24RTWG ncp45790-d.pdf
NCP45790IMN24RTWG
Виробник: onsemi
Description: SOLITUDE 790 MCM
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 5.6mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: 14-DFN (4x4)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
Part Status: Active
на замовлення 19289 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+380.63 грн
10+238.40 грн
25+205.07 грн
100+157.12 грн
250+139.76 грн
500+129.08 грн
1000+119.86 грн
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NCP435FCT2G ncp435-d.pdf
NCP435FCT2G
Виробник: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 65mOhm
Input Type: Non-Inverting
Voltage - Load: 1V ~ 3.6V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.96x0.96)
Part Status: Last Time Buy
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NCP45750IMN24TWG
Виробник: onsemi
Description: 750 MCM
на замовлення 2890 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+242.51 грн
10+210.25 грн
25+198.79 грн
100+161.70 грн
250+153.41 грн
500+137.65 грн
1000+114.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NCP45760IMN24RTWG ncp45760-d.pdf
NCP45760IMN24RTWG
Виробник: onsemi
Description: 760 MCM
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 12-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 17mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 24V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 20A
Ratio - Input:Output: 1:1
Supplier Device Package: 12-DFN (3x3)
Fault Protection: Current Limiting (Adjustable), Open Load Detect, Over Temperature, Reverse Current, UVLO
на замовлення 798 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+233.68 грн
10+142.59 грн
25+121.10 грн
100+90.89 грн
250+79.70 грн
500+72.83 грн
Мінімальне замовлення: 2
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NCP4625HSN33T1G NCP4625-D.PDF
NCP4625HSN33T1G
Виробник: onsemi
Description: IC REG LINEAR 3.3V 300MA SOT23-5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 40 µA
Voltage - Input (Max): 10V
Number of Regulators: 1
Supplier Device Package: SOT-23-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.85V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 180480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
784+29.21 грн
Мінімальне замовлення: 784
В кошику  од. на суму  грн.
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