| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NVMYS8D0N04CTWG | onsemi |
 Description: MOSFET N-CH 40V 16A/49A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMYS8D0N04CTWG | onsemi |
Description: MOSFET N-CH 40V 16A/49A 4LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0639 | onsemi |
Description: OPTOISO 3.75KV 2CH OPN COL 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.75V (Max) Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 3750Vrms Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 17ns, 5ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 2 Current - Output / Channel: 15 mA |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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| CAT93C66YI-TE13 | onsemi |
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Obsolete Memory Interface: Microwire Access Time: 500 ns Memory Organization: 256 x 16, 512 x 8 DigiKey Programmable: Not Verified |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| CAT93C66Y | onsemi |
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Obsolete Memory Interface: Microwire Access Time: 500 ns Memory Organization: 256 x 16, 512 x 8 DigiKey Programmable: Not Verified |
на замовлення 3598 шт: термін постачання 21-31 дні (днів) |
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NC7WV07L6X | onsemi |
Description: IC BUF NON-INVERT 3.6V 6MICROPAK Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: 6-MicroPak Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7WV07L6X | onsemi |
Description: IC BUF NON-INVERT 3.6V 6MICROPAK Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: 6-MicroPak Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MOC3020TVM | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP Packaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: IEC/EN/DIN, UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 30mA Part Status: Active Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 757 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2135LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2135LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20840 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2131LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2131LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MUN2235T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
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MUN2235T1G | onsemi |
Description: TRANS PREBIAS NPN 50V SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 128829 шт: термін постачання 21-31 дні (днів) |
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MUN2214T1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 10460 шт: термін постачання 21-31 дні (днів) |
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MMUN2130LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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MMUN2130LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
на замовлення 29673 шт: термін постачання 21-31 дні (днів) |
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NLAS5213AMUT | onsemi |
Description: IC SWITCH DPST 8UDFN Packaging: Bulk Part Status: Active Package / Case: 8-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.3Ohm -3db Bandwidth: 496MHz Supplier Device Package: 8-UDFN (1.8x1.2) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Crosstalk: -97dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 20ns, 15ns Channel Capacitance (CS(off), CD(off)): 19pF Current - Leakage (IS(off)) (Max): 1µA Number of Circuits: 2 |
на замовлення 11973 шт: термін постачання 21-31 дні (днів) |
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NLAS9041DFT2G | onsemi |
Description: SPDT, 1 FUNC, 1 CHANNEL, PDSO6 Packaging: Bulk Part Status: Active |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SZMM5Z5V6ST1G | onsemi |
Description: DIODE ZENER 5.6V 500MW SOD523 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZMM5Z5V6ST1G | onsemi |
Description: DIODE ZENER 5.6V 500MW SOD523 Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 380 шт: термін постачання 21-31 дні (днів) |
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NSZ5V6V2T5G | onsemi |
Description: DIODE ZENER 5.6V 200MW SOD523 Packaging: Tape & Reel (TR) Tolerance: ±2.14% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 64000 шт: термін постачання 21-31 дні (днів) |
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NSZ5V6V2T5G | onsemi |
Description: DIODE ZENER 5.6V 200MW SOD523 Packaging: Cut Tape (CT) Tolerance: ±2.14% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 71960 шт: термін постачання 21-31 дні (днів) |
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J111 | onsemi |
Description: JFET N-CH 35V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 625 mW Resistance - RDS(On): 30 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V |
на замовлення 4290 шт: термін постачання 21-31 дні (днів) |
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J113 | onsemi |
Description: JFET N-CH 35V TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 625 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V |
на замовлення 13187 шт: термін постачання 21-31 дні (днів) |
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J112-D27Z | onsemi |
Description: JFET N-CH 35V TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 625 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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J112-D27Z | onsemi |
Description: JFET N-CH 35V TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 625 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
на замовлення 29766 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C478NLWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 10.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 186000 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C478NLWFT1G | onsemi |
Description: MOSFET 2N-CH 40V 10.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 187445 шт: термін постачання 21-31 дні (днів) |
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BSV52LT1 | onsemi |
Description: TRANS NPN 12V 0.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 400MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 225 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA1708T-AN | onsemi |
Description: TRANS PNP 100V 1A 3-NMP Packaging: Tape & Reel (TR) Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NMP Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CM1436-08DE | onsemi |
Description: FILTER RC(PI) 200 OHMS ESD SMD Packaging: Bulk Package / Case: 16-WFDFN Exposed Pad Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 200Ohms, C = 15pF Height: 0.031" (0.79mm) Attenuation Value: 30dB @ 800MHz ~ 6GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 100MHz (Cutoff) Resistance - Channel (Ohms): 200 ESD Protection: Yes Part Status: Obsolete Number of Channels: 8 |
на замовлення 13664 шт: термін постачання 21-31 дні (днів) |
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H11L2VM | onsemi |
Description: OPTOISO 4.17KV OPN COLL 6-DIP Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Open Collector Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Voltage - Forward (Vf) (Typ): 1.2V Data Rate: 1MHz Input Type: DC Voltage - Isolation: 4170Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-DIP Rise / Fall Time (Typ): 100ns, 100ns Propagation Delay tpLH / tpHL (Max): 4µs, 4µs Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 3920 шт: термін постачання 21-31 дні (днів) |
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FDS5690-NBBM009A | onsemi |
Description: MOSFET N-CH 60V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PCISL9R1560W | onsemi |
Description: IGBT STEALTH DUAL 600V 30A Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ISL9R1560PF2 | onsemi |
Description: DIODE GEN PURP 600V 15A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Avalanche Current - Average Rectified (Io): 15A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISL9R860S3ST | onsemi |
Description: DIODE GEN PURP 600V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISL9R860S3ST | onsemi |
Description: DIODE GEN PURP 600V 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISL9R860PF2 | onsemi |
Description: DIODE GEN PURP 600V 8A TO220F-2L Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PCISL9R18120W | onsemi |
Description: IGBT PCISL9R18120W Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FFPF20UP20DPTU | onsemi |
Description: DIODE ARRAY GP 200V 10A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFPF20UP30STU | onsemi |
Description: DIODE GEN PURP 300V 20A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDP7N50 | onsemi |
Description: MOSFET N-CH 500V 7A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM7818CT | onsemi |
Description: IC REG LINEAR 18V 1A TO220-3 Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 18V Part Status: Obsolete PSRR: 69dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C670NLAFT1G | onsemi |
Description: MOSFET N-CHANNEL 60V 17A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C670NLAFT1G | onsemi |
Description: MOSFET N-CHANNEL 60V 17A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1382 шт: термін постачання 21-31 дні (днів) |
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NVMFS5C670NT1G | onsemi |
Description: MOSFET N-CH 60V 17A/71A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 4V @ 53µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4470 шт: термін постачання 21-31 дні (днів) |
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MC78LC40NTRG | onsemi |
Description: IC REG LINEAR 4V 80MA 5TSOP Packaging: Bulk Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 3.6 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 4V Part Status: Obsolete Voltage Dropout (Max): 0.038V @ 1mA |
на замовлення 40733 шт: термін постачання 21-31 дні (днів) |
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MC78LC15NTR | onsemi |
Description: IC REG LINEAR 1.5V 50MA 5TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 50mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 3.6 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 1.5V Part Status: Obsolete Voltage Dropout (Max): 0.07V @ 1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC78LC40NTR | onsemi |
Description: IC REG LINEAR 4V 80MA 5TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-5 Thin, TSOT-23-5 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 3.6 µA Voltage - Input (Max): 12V Number of Regulators: 1 Supplier Device Package: 5-TSOP Voltage - Output (Min/Fixed): 4V Part Status: Obsolete Voltage Dropout (Max): 0.038V @ 1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FHP3130IM8X | onsemi |
Description: IC VOLTAGE FEEDBACK 1 CIRC 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 2.5mA Slew Rate: 110V/µs Gain Bandwidth Product: 60 MHz Current - Input Bias: 1.8 µA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOIC Part Status: Obsolete Number of Circuits: 1 Current - Output / Channel: 100 mA -3db Bandwidth: 170 MHz Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FHP3130IM8X | onsemi |
Description: IC VOLTAGE FEEDBACK 1 CIRC 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 2.5mA Slew Rate: 110V/µs Gain Bandwidth Product: 60 MHz Current - Input Bias: 1.8 µA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOIC Part Status: Obsolete Number of Circuits: 1 Current - Output / Channel: 100 mA -3db Bandwidth: 170 MHz Voltage - Supply Span (Min): 2.7 V Voltage - Supply Span (Max): 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TF252TH-5-TL-H | onsemi |
Description: N-CHANNEL JFET Packaging: Bulk Package / Case: 3-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V Current Drain (Id) - Max: 1 mA Supplier Device Package: 3-VTFP Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 2 V |
на замовлення 251492 шт: термін постачання 21-31 дні (днів) |
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NCP1230D100R2G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 100kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.7V ~ 18V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 12.6 V Part Status: Obsolete |
на замовлення 38421 шт: термін постачання 21-31 дні (днів) |
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| NCL31010GEVK | onsemi |
Description: POE INTERFACE INTELLIGENT LED DR Packaging: Bulk Features: Dimmable Voltage - Output: 16V ~ 38V Voltage - Input: 3.3V Current - Output / Channel: 1.4A Utilized IC / Part: NCL31010 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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NB7V32MMNG | onsemi |
Description: IC CLOCK DIVIDER 1.8/2.5V 16-QFN Packaging: Tube Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Output: CML Frequency - Max: 10GHz Type: Clock Divider Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 2.625V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 16-QFN (3x3) PLL: No Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 |
на замовлення 1810 шт: термін постачання 21-31 дні (днів) |
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NB7V32MMNG | onsemi |
Description: IC CLOCK DIVIDER 1.8/2.5V 16-QFN Packaging: Tube Package / Case: 16-VFQFN Exposed Pad Mounting Type: Surface Mount Output: CML Frequency - Max: 10GHz Type: Clock Divider Input: CML, LVDS, LVPECL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.71V ~ 2.625V Ratio - Input:Output: 1:1 Differential - Input:Output: Yes/Yes Supplier Device Package: 16-QFN (3x3) PLL: No Divider/Multiplier: Yes/No Part Status: Obsolete Number of Circuits: 1 |
на замовлення 1810 шт: термін постачання 21-31 дні (днів) |
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NUF4403MNT1G | onsemi |
Description: FILTER RC(PI) 100 OHM/17PF SMD Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 17pF Height: 0.039" (1.00mm) Attenuation Value: -35dB @ 800MHz ~ 2.2GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 105MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 4 |
на замовлення 1159 шт: термін постачання 21-31 дні (днів) |
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MC74ACT08DR2GH | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOIC Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74ACT08N | onsemi |
Description: IC GATE AND 4CH 2-INP 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-PDIP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
В кошику од. на суму грн. |
| NVMYS8D0N04CTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| NVMYS8D0N04CTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| HCPL0639 |
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Виробник: onsemi
Description: OPTOISO 3.75KV 2CH OPN COL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 17ns, 5ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 15 mA
Description: OPTOISO 3.75KV 2CH OPN COL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 17ns, 5ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 15 mA
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 422.35 грн |
| 10+ | 304.57 грн |
| 100+ | 244.46 грн |
| 500+ | 204.77 грн |
| 1000+ | 196.76 грн |
| CAT93C66YI-TE13 |
|
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1268+ | 17.53 грн |
| CAT93C66Y |
|
Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
на замовлення 3598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1480+ | 14.76 грн |
| NC7WV07L6X |
|
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| NC7WV07L6X |
|
Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| MOC3020TVM |
|
Виробник: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 30mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 30mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 757 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.48 грн |
| 10+ | 39.75 грн |
| 100+ | 26.80 грн |
| 500+ | 20.39 грн |
| NSVMMUN2135LT1G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.99 грн |
| 6000+ | 3.57 грн |
| 9000+ | 2.96 грн |
| NSVMMUN2135LT1G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20840 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.82 грн |
| 20+ | 15.67 грн |
| 100+ | 7.65 грн |
| 500+ | 5.99 грн |
| 1000+ | 4.16 грн |
| NSVMMUN2131LT1G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.38 грн |
| 6000+ | 2.04 грн |
| 9000+ | 1.91 грн |
| NSVMMUN2131LT1G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.91 грн |
| 44+ | 7.11 грн |
| 100+ | 4.37 грн |
| 500+ | 2.98 грн |
| 1000+ | 2.61 грн |
| MUN2235T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.28 грн |
| 6000+ | 1.98 грн |
| 15000+ | 1.72 грн |
| 30000+ | 1.45 грн |
| 75000+ | 1.29 грн |
| MUN2235T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 128829 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.50 грн |
| 28+ | 11.24 грн |
| 100+ | 6.15 грн |
| 500+ | 3.55 грн |
| 1000+ | 2.42 грн |
| MUN2214T1G |
|
Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 10460 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.50 грн |
| 35+ | 8.94 грн |
| 100+ | 4.81 грн |
| 500+ | 3.55 грн |
| 1000+ | 2.46 грн |
| MMUN2130LT1G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.39 грн |
| 6000+ | 2.17 грн |
| 9000+ | 1.85 грн |
| MMUN2130LT1G |
|
Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
на замовлення 29673 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.50 грн |
| 33+ | 9.40 грн |
| 100+ | 5.08 грн |
| 500+ | 3.75 грн |
| 1000+ | 2.60 грн |
| NLAS5213AMUT |
|
Виробник: onsemi
Description: IC SWITCH DPST 8UDFN
Packaging: Bulk
Part Status: Active
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
Description: IC SWITCH DPST 8UDFN
Packaging: Bulk
Part Status: Active
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
на замовлення 11973 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 606+ | 36.52 грн |
| NLAS9041DFT2G |
|
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1110+ | 19.79 грн |
| SZMM5Z5V6ST1G |
|
Виробник: onsemi
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SZMM5Z5V6ST1G |
|
Виробник: onsemi
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 380 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.40 грн |
| 19+ | 16.67 грн |
| 100+ | 11.20 грн |
| NSZ5V6V2T5G |
|
Виробник: onsemi
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 8.17 грн |
| 16000+ | 7.36 грн |
| 24000+ | 6.75 грн |
| 56000+ | 6.10 грн |
| NSZ5V6V2T5G |
|
Виробник: onsemi
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 71960 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.17 грн |
| 13+ | 23.85 грн |
| 100+ | 16.25 грн |
| 500+ | 11.43 грн |
| 1000+ | 8.58 грн |
| 2000+ | 7.86 грн |
| J111 |
|
Виробник: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
на замовлення 4290 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.55 грн |
| 16+ | 19.34 грн |
| 100+ | 8.77 грн |
| 500+ | 7.86 грн |
| 1000+ | 7.00 грн |
| 2000+ | 6.68 грн |
| J113 |
|
Виробник: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
на замовлення 13187 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.14 грн |
| 14+ | 21.94 грн |
| 100+ | 9.42 грн |
| 500+ | 7.91 грн |
| 1000+ | 7.66 грн |
| 2000+ | 6.85 грн |
| 5000+ | 6.08 грн |
| 10000+ | 5.22 грн |
| J112-D27Z |
|
Виробник: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 35V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 9.04 грн |
| 4000+ | 8.06 грн |
| 6000+ | 7.84 грн |
| 10000+ | 7.34 грн |
| 14000+ | 7.16 грн |
| 20000+ | 6.88 грн |
| J112-D27Z |
|
Виробник: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 35V TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
на замовлення 29766 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.11 грн |
| 13+ | 25.23 грн |
| 100+ | 16.10 грн |
| 500+ | 11.41 грн |
| 1000+ | 10.22 грн |
| NVMFD5C478NLWFT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 186000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 53.47 грн |
| 3000+ | 48.23 грн |
| NVMFD5C478NLWFT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 187445 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.86 грн |
| 10+ | 107.33 грн |
| 100+ | 73.21 грн |
| 500+ | 54.98 грн |
| BSV52LT1 |
|
Виробник: onsemi
Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1708T-AN |
|
Виробник: onsemi
Description: TRANS PNP 100V 1A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS PNP 100V 1A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| CM1436-08DE |
|
Виробник: onsemi
Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Bulk
Package / Case: 16-WFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 15pF
Height: 0.031" (0.79mm)
Attenuation Value: 30dB @ 800MHz ~ 6GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Bulk
Package / Case: 16-WFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 15pF
Height: 0.031" (0.79mm)
Attenuation Value: 30dB @ 800MHz ~ 6GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
на замовлення 13664 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1110+ | 20.44 грн |
| H11L2VM |
|
Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 4.17KV OPN COLL 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 3920 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.61 грн |
| 10+ | 88.45 грн |
| 100+ | 67.04 грн |
| 500+ | 54.04 грн |
| 1000+ | 51.15 грн |
| 2000+ | 48.70 грн |
| FDS5690-NBBM009A |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V
Description: MOSFET N-CH 60V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V
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| ISL9R1560PF2 |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 15A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| ISL9R860S3ST |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| ISL9R860S3ST |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| ISL9R860PF2 |
|
Виробник: onsemi
Description: DIODE GEN PURP 600V 8A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| FFPF20UP20DPTU |
|
Виробник: onsemi
Description: DIODE ARRAY GP 200V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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| FFPF20UP30STU |
|
Виробник: onsemi
Description: DIODE GEN PURP 300V 20A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Description: DIODE GEN PURP 300V 20A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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| FDP7N50 |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Description: MOSFET N-CH 500V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
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| LM7818CT |
|
Виробник: onsemi
Description: IC REG LINEAR 18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
Part Status: Obsolete
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
Part Status: Obsolete
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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| NVMFS5C670NLAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CHANNEL 60V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 60V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| NVMFS5C670NLAFT1G |
|
Виробник: onsemi
Description: MOSFET N-CHANNEL 60V 17A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 60V 17A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1382 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.93 грн |
| 10+ | 90.82 грн |
| 100+ | 64.58 грн |
| 500+ | 49.68 грн |
| NVMFS5C670NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 17A/71A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 140.52 грн |
| 10+ | 92.35 грн |
| 100+ | 65.75 грн |
| 500+ | 50.62 грн |
| MC78LC40NTRG |
|
Виробник: onsemi
Description: IC REG LINEAR 4V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 3.6 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 4V
Part Status: Obsolete
Voltage Dropout (Max): 0.038V @ 1mA
Description: IC REG LINEAR 4V 80MA 5TSOP
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 3.6 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 4V
Part Status: Obsolete
Voltage Dropout (Max): 0.038V @ 1mA
на замовлення 40733 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1522+ | 14.51 грн |
| MC78LC15NTR |
|
Виробник: onsemi
Description: IC REG LINEAR 1.5V 50MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 3.6 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.5V
Part Status: Obsolete
Voltage Dropout (Max): 0.07V @ 1mA
Description: IC REG LINEAR 1.5V 50MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 3.6 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 1.5V
Part Status: Obsolete
Voltage Dropout (Max): 0.07V @ 1mA
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| MC78LC40NTR |
|
Виробник: onsemi
Description: IC REG LINEAR 4V 80MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 3.6 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 4V
Part Status: Obsolete
Voltage Dropout (Max): 0.038V @ 1mA
Description: IC REG LINEAR 4V 80MA 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 3.6 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: 5-TSOP
Voltage - Output (Min/Fixed): 4V
Part Status: Obsolete
Voltage Dropout (Max): 0.038V @ 1mA
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| FHP3130IM8X |
|
Виробник: onsemi
Description: IC VOLTAGE FEEDBACK 1 CIRC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Description: IC VOLTAGE FEEDBACK 1 CIRC 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
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| FHP3130IM8X |
|
Виробник: onsemi
Description: IC VOLTAGE FEEDBACK 1 CIRC 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Description: IC VOLTAGE FEEDBACK 1 CIRC 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.5mA
Slew Rate: 110V/µs
Gain Bandwidth Product: 60 MHz
Current - Input Bias: 1.8 µA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 100 mA
-3db Bandwidth: 170 MHz
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
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| TF252TH-5-TL-H |
|
Виробник: onsemi
Description: N-CHANNEL JFET
Packaging: Bulk
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 2 V
Description: N-CHANNEL JFET
Packaging: Bulk
Package / Case: 3-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 210 µA @ 2 V
на замовлення 251492 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2131+ | 11.11 грн |
| NCP1230D100R2G |
|
Виробник: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.7V ~ 18V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12.6 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.7V ~ 18V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12.6 V
Part Status: Obsolete
на замовлення 38421 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 335+ | 65.90 грн |
| NCL31010GEVK |
|
Виробник: onsemi
Description: POE INTERFACE INTELLIGENT LED DR
Packaging: Bulk
Features: Dimmable
Voltage - Output: 16V ~ 38V
Voltage - Input: 3.3V
Current - Output / Channel: 1.4A
Utilized IC / Part: NCL31010
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: POE INTERFACE INTELLIGENT LED DR
Packaging: Bulk
Features: Dimmable
Voltage - Output: 16V ~ 38V
Voltage - Input: 3.3V
Current - Output / Channel: 1.4A
Utilized IC / Part: NCL31010
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 18521.50 грн |
| NB7V32MMNG |
|
Виробник: onsemi
Description: IC CLOCK DIVIDER 1.8/2.5V 16-QFN
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML
Frequency - Max: 10GHz
Type: Clock Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-QFN (3x3)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
Description: IC CLOCK DIVIDER 1.8/2.5V 16-QFN
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML
Frequency - Max: 10GHz
Type: Clock Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-QFN (3x3)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
на замовлення 1810 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 61182.88 грн |
| NB7V32MMNG |
|
Виробник: onsemi
Description: IC CLOCK DIVIDER 1.8/2.5V 16-QFN
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML
Frequency - Max: 10GHz
Type: Clock Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-QFN (3x3)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
Description: IC CLOCK DIVIDER 1.8/2.5V 16-QFN
Packaging: Tube
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: CML
Frequency - Max: 10GHz
Type: Clock Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 2.625V
Ratio - Input:Output: 1:1
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-QFN (3x3)
PLL: No
Divider/Multiplier: Yes/No
Part Status: Obsolete
Number of Circuits: 1
на замовлення 1810 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 61182.88 грн |
| NUF4403MNT1G |
|
Виробник: onsemi
Description: FILTER RC(PI) 100 OHM/17PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 105MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
Description: FILTER RC(PI) 100 OHM/17PF SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 17pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 105MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 49.22 грн |
| 10+ | 45.87 грн |
| 25+ | 37.43 грн |
| 50+ | 31.57 грн |
| 100+ | 28.69 грн |
| 250+ | 27.26 грн |
| 500+ | 23.99 грн |
| 1000+ | 22.58 грн |
| MC74ACT08DR2GH |
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
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| MC74ACT08N |
|
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
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од. на суму грн.