Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NCV8716MT25TBG | onsemi |
![]() Packaging: Bulk Package / Case: 6-WDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 80mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 5.8 µA Voltage - Input (Max): 24V Number of Regulators: 1 Supplier Device Package: 6-WDFN (2x2) Voltage - Output (Min/Fixed): 2.5V Part Status: Active PSRR: 60dB (100kHz) Voltage Dropout (Max): 0.64V @ 80mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
на замовлення 135000 шт: термін постачання 21-31 дні (днів) |
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NCV8715MX12TBG | onsemi |
![]() Packaging: Bulk Package / Case: 6-XFDFN Output Type: Fixed Mounting Type: Surface Mount Current - Output: 50mA Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive Voltage - Input (Max): 24V Number of Regulators: 1 Supplier Device Package: 6-XDFN (1.5x1.5) Voltage - Output (Min/Fixed): 1.2V Part Status: Obsolete PSRR: 60dB (100kHz) Protection Features: Over Current, Over Temperature |
на замовлення 102000 шт: термін постачання 21-31 дні (днів) |
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LE25S161XBTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 90°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH Clock Frequency: 70 MHz Memory Format: FLASH Supplier Device Package: 8-WLCSP (2.92x1.53) Part Status: Active Write Cycle Time - Word, Page: 700µs Memory Interface: SPI Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LE25S161XBTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 90°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH Clock Frequency: 70 MHz Memory Format: FLASH Supplier Device Package: 8-WLCSP (2.92x1.53) Part Status: Active Write Cycle Time - Word, Page: 700µs Memory Interface: SPI Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
на замовлення 655 шт: термін постачання 21-31 дні (днів) |
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NCV7755DQR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 900mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 2.3A Ratio - Input:Output: 1:4 Supplier Device Package: 24-SSOP-EP Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NCV7755DQR2G | onsemi |
![]() Packaging: Cut Tape (CT) Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 900mOhm Input Type: Non-Inverting Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 2.3A Ratio - Input:Output: 1:4 Supplier Device Package: 24-SSOP-EP Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 7397 шт: термін постачання 21-31 дні (днів) |
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FR015L3EZ | onsemi |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMFZ8V2T3G | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD123 Packaging: Bulk Package / Case: SOD-123 Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 8.2 V Supplier Device Package: SOD-123 Part Status: Obsolete Power - Max: 500 mW |
на замовлення 380000 шт: термін постачання 21-31 дні (днів) |
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FDMC86184 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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FDMC86184 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 110µA Supplier Device Package: 8-PQFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V |
на замовлення 8842 шт: термін постачання 21-31 дні (днів) |
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MCH5835-TL-E | onsemi |
Description: NCH+SBD 2.5V DRIVE SERIES Packaging: Bulk Part Status: Active |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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MCH5836-TL-E | onsemi |
Description: PCH+SBD 1.8V DRIVE SERIES Packaging: Bulk Part Status: Active |
на замовлення 219000 шт: термін постачання 21-31 дні (днів) |
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MCH5837-TL-E | onsemi |
Description: MOSFET N-CH 20V 2A 5MCPH Packaging: Bulk Package / Case: 6-SMD (5 Leads), Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 145mOhm @ 1A, 4V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 5-MCPH Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V |
на замовлення 16750 шт: термін постачання 21-31 дні (днів) |
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MOC3071TVM | onsemi |
![]() Packaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.18V Voltage - Isolation: 4170Vrms Approval Agency: UL, VDE Current - Hold (Ih): 540µA (Typ) Supplier Device Package: 6-PDIP Zero Crossing Circuit: No Static dV/dt (Min): 1kV/µs Current - LED Trigger (Ift) (Max): 15mA Part Status: Active Number of Channels: 1 Voltage - Off State: 800 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 980 шт: термін постачання 21-31 дні (днів) |
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NLV14022BDR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Direction: Up Trigger Type: Positive Edge Supplier Device Package: 16-SOIC Part Status: Active Voltage - Supply: 3 V ~ 18 V Count Rate: 16 MHz Number of Bits per Element: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMYS8D0N04CTWG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMYS8D0N04CTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL0639 | onsemi |
![]() Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.75V (Max) Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 3750Vrms Inputs - Side 1/Side 2: 2/0 Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 17ns, 5ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 2 Current - Output / Channel: 15 mA |
на замовлення 2894 шт: термін постачання 21-31 дні (днів) |
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CAT93C66YI-TE13 | onsemi |
![]() Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Obsolete Memory Interface: Microwire Access Time: 500 ns Memory Organization: 256 x 16, 512 x 8 DigiKey Programmable: Not Verified |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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CAT93C66Y | onsemi |
![]() Packaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.5V ~ 6V Technology: EEPROM Clock Frequency: 2 MHz Memory Format: EEPROM Supplier Device Package: 8-TSSOP Part Status: Obsolete Memory Interface: Microwire Access Time: 500 ns Memory Organization: 256 x 16, 512 x 8 DigiKey Programmable: Not Verified |
на замовлення 3598 шт: термін постачання 21-31 дні (днів) |
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NC7WV07L6X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: 6-MicroPak Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NC7WV07L6X | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Open Drain Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: -, 24mA Supplier Device Package: 6-MicroPak Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MOC3020TVM | onsemi |
![]() Packaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: IEC/EN/DIN, UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 30mA Part Status: Active Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
на замовлення 757 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2135LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2135LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 20840 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2131LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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NSVMMUN2131LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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MUN2235T1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 126000 шт: термін постачання 21-31 дні (днів) |
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MUN2235T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 128829 шт: термін постачання 21-31 дні (днів) |
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MUN2214T1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-59 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 230 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 10460 шт: термін постачання 21-31 дні (днів) |
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MMUN2130LT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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MMUN2130LT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
на замовлення 29673 шт: термін постачання 21-31 дні (днів) |
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NLAS5213AMUT | onsemi |
![]() Packaging: Bulk Part Status: Active Package / Case: 8-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.3Ohm -3db Bandwidth: 496MHz Supplier Device Package: 8-UDFN (1.8x1.2) Voltage - Supply, Single (V+): 1.65V ~ 4.5V Crosstalk: -97dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 20ns, 15ns Channel Capacitance (CS(off), CD(off)): 19pF Current - Leakage (IS(off)) (Max): 1µA Number of Circuits: 2 |
на замовлення 11973 шт: термін постачання 21-31 дні (днів) |
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NLAS9041DFT2G | onsemi |
![]() Packaging: Bulk Part Status: Active |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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SZMM5Z5V6ST1G | onsemi |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZMM5Z5V6ST1G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 380 шт: термін постачання 21-31 дні (днів) |
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NSZ5V6V2T5G | onsemi |
![]() Packaging: Tape & Reel (TR) Tolerance: ±2.14% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 64000 шт: термін постачання 21-31 дні (днів) |
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NSZ5V6V2T5G | onsemi |
![]() Packaging: Cut Tape (CT) Tolerance: ±2.14% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: SOD-523 Part Status: Active Power - Max: 200 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
на замовлення 71960 шт: термін постачання 21-31 дні (днів) |
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J111 | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 625 mW Resistance - RDS(On): 30 Ohms Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V |
на замовлення 4102 шт: термін постачання 21-31 дні (днів) |
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J113 | onsemi |
![]() Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 625 mW Resistance - RDS(On): 100 Ohms Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V |
на замовлення 12914 шт: термін постачання 21-31 дні (днів) |
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J112-D27Z | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 625 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
на замовлення 28000 шт: термін постачання 21-31 дні (днів) |
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J112-D27Z | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-92-3 Part Status: Active Power - Max: 625 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
на замовлення 29766 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C478NLWFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 186000 шт: термін постачання 21-31 дні (днів) |
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NVMFD5C478NLWFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 187445 шт: термін постачання 21-31 дні (днів) |
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BSV52LT1 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 400MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 225 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA1708T-AN | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V Frequency - Transition: 120MHz Supplier Device Package: 3-NMP Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CM1436-08DE | onsemi |
![]() Packaging: Bulk Package / Case: 16-WFDFN Exposed Pad Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 200Ohms, C = 15pF Height: 0.031" (0.79mm) Attenuation Value: 30dB @ 800MHz ~ 6GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 100MHz (Cutoff) Resistance - Channel (Ohms): 200 ESD Protection: Yes Part Status: Obsolete Number of Channels: 8 |
на замовлення 13664 шт: термін постачання 21-31 дні (днів) |
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H11L2VM | onsemi |
![]() Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Open Collector Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 15V Voltage - Forward (Vf) (Typ): 1.2V Data Rate: 1MHz Input Type: DC Voltage - Isolation: 4170Vrms Current - DC Forward (If) (Max): 30mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-DIP Rise / Fall Time (Typ): 100ns, 100ns Propagation Delay tpLH / tpHL (Max): 4µs, 4µs Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
на замовлення 3910 шт: термін постачання 21-31 дні (днів) |
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FDS5690-NBBM009A | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
PCISL9R1560W | onsemi |
Description: IGBT STEALTH DUAL 600V 30A Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ISL9R1560PF2 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Technology: Avalanche Current - Average Rectified (Io): 15A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISL9R860S3ST | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISL9R860S3ST | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISL9R860PF2 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Avalanche Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
PCISL9R18120W | onsemi |
Description: IGBT PCISL9R18120W Packaging: Bulk Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FFPF20UP20DPTU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F-3 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FFPF20UP30STU | onsemi |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDP7N50 | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM7818CT | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 18V Part Status: Obsolete PSRR: 69dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NVMFS5C670NLAFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
NCV8716MT25TBG |
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Виробник: onsemi
Description: IC REG LINEAR 2.5V 80MA 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
PSRR: 60dB (100kHz)
Voltage Dropout (Max): 0.64V @ 80mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 2.5V 80MA 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 80mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5.8 µA
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-WDFN (2x2)
Voltage - Output (Min/Fixed): 2.5V
Part Status: Active
PSRR: 60dB (100kHz)
Voltage Dropout (Max): 0.64V @ 80mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 135000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
725+ | 30.19 грн |
NCV8715MX12TBG |
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Виробник: onsemi
Description: IC REG LINEAR 1.2V 50MA 6XDFN
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-XDFN (1.5x1.5)
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 60dB (100kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.2V 50MA 6XDFN
Packaging: Bulk
Package / Case: 6-XFDFN
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Voltage - Input (Max): 24V
Number of Regulators: 1
Supplier Device Package: 6-XDFN (1.5x1.5)
Voltage - Output (Min/Fixed): 1.2V
Part Status: Obsolete
PSRR: 60dB (100kHz)
Protection Features: Over Current, Over Temperature
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
641+ | 34.60 грн |
LE25S161XBTAG |
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Виробник: onsemi
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Part Status: Active
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Part Status: Active
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
LE25S161XBTAG |
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Виробник: onsemi
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Part Status: Active
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI 70MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 90°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH
Clock Frequency: 70 MHz
Memory Format: FLASH
Supplier Device Package: 8-WLCSP (2.92x1.53)
Part Status: Active
Write Cycle Time - Word, Page: 700µs
Memory Interface: SPI
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
на замовлення 655 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 227.64 грн |
10+ | 194.64 грн |
25+ | 185.65 грн |
50+ | 168.08 грн |
100+ | 162.14 грн |
250+ | 154.60 грн |
500+ | 146.68 грн |
NCV7755DQR2G |
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Виробник: onsemi
Description: OCTAL HIGH-SIDE DRIVER THAT CAN
Packaging: Tape & Reel (TR)
Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:4
Supplier Device Package: 24-SSOP-EP
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: OCTAL HIGH-SIDE DRIVER THAT CAN
Packaging: Tape & Reel (TR)
Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:4
Supplier Device Package: 24-SSOP-EP
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 215.67 грн |
NCV7755DQR2G |
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Виробник: onsemi
Description: OCTAL HIGH-SIDE DRIVER THAT CAN
Packaging: Cut Tape (CT)
Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:4
Supplier Device Package: 24-SSOP-EP
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: OCTAL HIGH-SIDE DRIVER THAT CAN
Packaging: Cut Tape (CT)
Features: Auto Restart, Internal PWM, Latch Function, Slew Rate Controlled
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 900mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 2.3A
Ratio - Input:Output: 1:4
Supplier Device Package: 24-SSOP-EP
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Reverse Battery, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 7397 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 413.68 грн |
10+ | 305.01 грн |
25+ | 281.77 грн |
100+ | 240.48 грн |
250+ | 238.56 грн |
MMFZ8V2T3G |
Виробник: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Description: DIODE ZENER 8.2V 500MW SOD123
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 8.2 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
на замовлення 380000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11539+ | 2.20 грн |
FDMC86184 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 57A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
Description: MOSFET N-CH 100V 57A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 59.29 грн |
FDMC86184 |
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Виробник: onsemi
Description: MOSFET N-CH 100V 57A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
Description: MOSFET N-CH 100V 57A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 21A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 110µA
Supplier Device Package: 8-PQFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
на замовлення 8842 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 187.61 грн |
10+ | 119.43 грн |
100+ | 82.31 грн |
500+ | 62.35 грн |
1000+ | 57.56 грн |
MCH5835-TL-E |
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4438+ | 5.03 грн |
MCH5836-TL-E |
на замовлення 219000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2664+ | 7.90 грн |
MCH5837-TL-E |
Виробник: onsemi
Description: MOSFET N-CH 20V 2A 5MCPH
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 145mOhm @ 1A, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 5-MCPH
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Description: MOSFET N-CH 20V 2A 5MCPH
Packaging: Bulk
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 145mOhm @ 1A, 4V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 5-MCPH
Part Status: Obsolete
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
на замовлення 16750 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2664+ | 7.90 грн |
MOC3071TVM |
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Виробник: onsemi
Description: OPTOISO 4.17KV TRIAC 1CH 6-PDIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL, VDE
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-PDIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRIAC 1CH 6-PDIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.18V
Voltage - Isolation: 4170Vrms
Approval Agency: UL, VDE
Current - Hold (Ih): 540µA (Typ)
Supplier Device Package: 6-PDIP
Zero Crossing Circuit: No
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 980 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.14 грн |
10+ | 51.17 грн |
100+ | 37.94 грн |
500+ | 30.09 грн |
NLV14022BDR2G |
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Виробник: onsemi
Description: IC OCTAL COUNTER 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
Description: IC OCTAL COUNTER 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
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NVMYS8D0N04CTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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NVMYS8D0N04CTWG |
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Виробник: onsemi
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 40V 16A/49A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V
Power Dissipation (Max): 3.8W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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од. на суму грн.
HCPL0639 |
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Виробник: onsemi
Description: OPTOISO 3.75KV 2CH OPN COL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 17ns, 5ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 15 mA
Description: OPTOISO 3.75KV 2CH OPN COL 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.75V (Max)
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Inputs - Side 1/Side 2: 2/0
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 17ns, 5ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 2
Current - Output / Channel: 15 mA
на замовлення 2894 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 417.61 грн |
10+ | 301.15 грн |
100+ | 241.71 грн |
500+ | 202.46 грн |
1000+ | 194.55 грн |
CAT93C66YI-TE13 |
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Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1268+ | 17.33 грн |
CAT93C66Y |
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Виробник: onsemi
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT MICROWIRE 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.5V ~ 6V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Obsolete
Memory Interface: Microwire
Access Time: 500 ns
Memory Organization: 256 x 16, 512 x 8
DigiKey Programmable: Not Verified
на замовлення 3598 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1480+ | 14.59 грн |
NC7WV07L6X |
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Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
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NC7WV07L6X |
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Виробник: onsemi
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: -, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
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MOC3020TVM |
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Виробник: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 30mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 30mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
на замовлення 757 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 66.72 грн |
10+ | 39.31 грн |
100+ | 26.50 грн |
500+ | 20.16 грн |
NSVMMUN2135LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.95 грн |
6000+ | 3.53 грн |
9000+ | 2.92 грн |
NSVMMUN2135LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 20840 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.55 грн |
20+ | 15.50 грн |
100+ | 7.57 грн |
500+ | 5.92 грн |
1000+ | 4.12 грн |
NSVMMUN2131LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.35 грн |
6000+ | 2.01 грн |
9000+ | 1.89 грн |
NSVMMUN2131LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
27+ | 11.77 грн |
44+ | 7.03 грн |
100+ | 4.32 грн |
500+ | 2.94 грн |
1000+ | 2.58 грн |
MUN2235T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 126000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.25 грн |
6000+ | 1.96 грн |
15000+ | 1.70 грн |
30000+ | 1.44 грн |
75000+ | 1.28 грн |
MUN2235T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V SC59-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 128829 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.34 грн |
28+ | 11.11 грн |
100+ | 6.08 грн |
500+ | 3.51 грн |
1000+ | 2.39 грн |
MUN2214T1G |
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Виробник: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 10460 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.34 грн |
35+ | 8.84 грн |
100+ | 4.75 грн |
500+ | 3.51 грн |
1000+ | 2.43 грн |
MMUN2130LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.36 грн |
6000+ | 2.15 грн |
9000+ | 1.83 грн |
MMUN2130LT1G |
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Виробник: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
на замовлення 29673 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
24+ | 13.34 грн |
33+ | 9.30 грн |
100+ | 5.03 грн |
500+ | 3.71 грн |
1000+ | 2.57 грн |
NLAS5213AMUT |
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Виробник: onsemi
Description: IC SWITCH DPST 8UDFN
Packaging: Bulk
Part Status: Active
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
Description: IC SWITCH DPST 8UDFN
Packaging: Bulk
Part Status: Active
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.3Ohm
-3db Bandwidth: 496MHz
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Crosstalk: -97dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 20ns, 15ns
Channel Capacitance (CS(off), CD(off)): 19pF
Current - Leakage (IS(off)) (Max): 1µA
Number of Circuits: 2
на замовлення 11973 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
606+ | 36.11 грн |
NLAS9041DFT2G |
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на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1110+ | 19.57 грн |
SZMM5Z5V6ST1G |
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Виробник: onsemi
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
SZMM5Z5V6ST1G |
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Виробник: onsemi
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 5.6V 500MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 380 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 25.12 грн |
19+ | 16.48 грн |
100+ | 11.07 грн |
NSZ5V6V2T5G |
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Виробник: onsemi
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 8.08 грн |
16000+ | 7.28 грн |
24000+ | 6.68 грн |
56000+ | 6.03 грн |
NSZ5V6V2T5G |
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Виробник: onsemi
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±2.14%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 71960 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.83 грн |
13+ | 23.58 грн |
100+ | 16.06 грн |
500+ | 11.31 грн |
1000+ | 8.48 грн |
2000+ | 7.77 грн |
J111 |
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Виробник: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 30 Ohms
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
на замовлення 4102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 31.40 грн |
17+ | 18.22 грн |
100+ | 9.83 грн |
500+ | 8.01 грн |
1000+ | 6.59 грн |
2000+ | 6.40 грн |
J113 |
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Виробник: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Description: JFET N-CH 35V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 100 Ohms
Voltage - Cutoff (VGS off) @ Id: 500 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
на замовлення 12914 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 27.47 грн |
15+ | 20.64 грн |
100+ | 8.94 грн |
500+ | 8.21 грн |
1000+ | 6.99 грн |
2000+ | 6.79 грн |
5000+ | 6.41 грн |
10000+ | 5.87 грн |
J112-D27Z |
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Виробник: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 35V TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 8.94 грн |
4000+ | 7.97 грн |
6000+ | 7.75 грн |
10000+ | 7.26 грн |
14000+ | 7.08 грн |
20000+ | 6.80 грн |
J112-D27Z |
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Виробник: onsemi
Description: JFET N-CH 35V TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 35V TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-92-3
Part Status: Active
Power - Max: 625 mW
Resistance - RDS(On): 50 Ohms
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
на замовлення 29766 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 37.68 грн |
13+ | 24.94 грн |
100+ | 15.92 грн |
500+ | 11.28 грн |
1000+ | 10.10 грн |
NVMFD5C478NLWFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 186000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 52.87 грн |
3000+ | 47.68 грн |
NVMFD5C478NLWFT1G |
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Виробник: onsemi
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 25V
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 187445 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 171.91 грн |
10+ | 106.13 грн |
100+ | 72.38 грн |
500+ | 54.36 грн |
BSV52LT1 |
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Виробник: onsemi
Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
Description: TRANS NPN 12V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 400MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 225 mW
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2SA1708T-AN |
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Виробник: onsemi
Description: TRANS PNP 100V 1A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Description: TRANS PNP 100V 1A 3-NMP
Packaging: Tape & Reel (TR)
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 40mA, 400mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: 3-NMP
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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од. на суму грн.
CM1436-08DE |
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Виробник: onsemi
Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Bulk
Package / Case: 16-WFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 15pF
Height: 0.031" (0.79mm)
Attenuation Value: 30dB @ 800MHz ~ 6GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Bulk
Package / Case: 16-WFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 15pF
Height: 0.031" (0.79mm)
Attenuation Value: 30dB @ 800MHz ~ 6GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 8
на замовлення 13664 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
910+ | 22.77 грн |
H11L2VM |
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Виробник: onsemi
Description: OPTOISO 4.17KV OPN COLL 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 4.17KV OPN COLL 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Voltage - Forward (Vf) (Typ): 1.2V
Data Rate: 1MHz
Input Type: DC
Voltage - Isolation: 4170Vrms
Current - DC Forward (If) (Max): 30mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-DIP
Rise / Fall Time (Typ): 100ns, 100ns
Propagation Delay tpLH / tpHL (Max): 4µs, 4µs
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
на замовлення 3910 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 121.67 грн |
10+ | 83.38 грн |
100+ | 63.19 грн |
500+ | 50.93 грн |
1000+ | 48.20 грн |
2000+ | 45.89 грн |
FDS5690-NBBM009A |
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Виробник: onsemi
Description: MOSFET N-CH 60V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V
Description: MOSFET N-CH 60V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V
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ISL9R1560PF2 |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 15A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 15A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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ISL9R860S3ST |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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ISL9R860S3ST |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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ISL9R860PF2 |
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Виробник: onsemi
Description: DIODE GEN PURP 600V 8A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE GEN PURP 600V 8A TO220F-2L
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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FFPF20UP20DPTU |
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Виробник: onsemi
Description: DIODE ARRAY GP 200V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Description: DIODE ARRAY GP 200V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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FFPF20UP30STU |
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Виробник: onsemi
Description: DIODE GEN PURP 300V 20A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Description: DIODE GEN PURP 300V 20A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
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FDP7N50 |
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Виробник: onsemi
Description: MOSFET N-CH 500V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
Description: MOSFET N-CH 500V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 25 V
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LM7818CT |
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Виробник: onsemi
Description: IC REG LINEAR 18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
Part Status: Obsolete
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 18V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
Part Status: Obsolete
PSRR: 69dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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NVMFS5C670NLAFT1G |
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Виробник: onsemi
Description: MOSFET N-CHANNEL 60V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 60V 17A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 2V @ 53µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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