| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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P4SMAJ24A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMAJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||||
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P4SMAJ24A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||||
| P6KE20A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6KE Kind of package: Ammo Pack |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BC848BW_R1_00001 | PanJit |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZMM55-C12_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 12V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 30140 шт: термін постачання 14-30 дні (днів) |
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PJA3401A_R1_00001 | PanJit |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W On-state resistance: 86mΩ Mounting: SMD Pulsed drain current: -14.4A Power dissipation: 1.25W Gate charge: 19nC Polarisation: unipolar Drain current: -3.6A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 |
на замовлення 1583 шт: термін постачання 14-30 дні (днів) |
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SS3060HE-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 3A; reel,tape Mounting: SMD Max. forward impulse current: 80A Max. forward voltage: 0.65V Application: automotive industry Max. off-state voltage: 60V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.1mA Case: SOD123HE Type of diode: Schottky rectifying |
на замовлення 2750 шт: термін постачання 14-30 дні (днів) |
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GBJ1510_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 0.24kA Version: flat Case: GBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BZM55-B16_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 16V; SMD; MicroMELF; single diode; reel,tape Mounting: SMD Tolerance: ±2% Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: MicroMELF Zener voltage: 16V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZQ55-B16_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 16V; SMD; QuadroMELF; single diode; reel,tape Mounting: SMD Tolerance: ±5% Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: QuadroMELF Zener voltage: 16V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ZMM55-B9V1_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 9.1V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Mounting: SMD Tolerance: ±2% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZMM55-B22_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 22V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±2% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| GBL410_T0_00601 | PanJit |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBL2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PDZ13B_R1_00001 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 400mW; 13V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.4W Zener voltage: 13V Mounting: SMD Tolerance: ±2% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZMM55-B27_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 27V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Mounting: SMD Tolerance: ±2% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZMM55-B39_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 39V; SMD; LL34,MiniMELF; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 39V Mounting: SMD Tolerance: ±2% Case: LL34; MiniMELF Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6SMB33A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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P6SMB33A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4...34.7V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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PJX8812_R1_00001 | PanJit |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PJA3471_R1_00501 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -900mA Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.7Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: -3.6A Gate charge: 8nC |
на замовлення 20415 шт: термін постачання 14-30 дні (днів) |
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MMSZ5232B-AU_R1_000A1 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 500mW; 5.6V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5232B_R1_00001 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 500mW; 5.6V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5232BS-AU_R1_000A1 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 5.6V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5232BS_R1_00001 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 5.6V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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PJD25N06A_L2_00001 | PanJit |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 40W Case: TO252AA Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 100A Gate charge: 20nC Kind of package: reel; tape |
на замовлення 973 шт: термін постачання 14-30 дні (днів) |
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| PJD25N06A-AU_L2_000A1 | PanJit |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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PJP125N06SA-AU_T0_006A1 | PanJit |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 215A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RS1004FL_R1_00001 | PanJit |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V Max. forward impulse current: 30A Max. forward voltage: 1.3V Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.4kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SOD123F Type of diode: rectifying Reverse recovery time: 0.5µs Mounting: SMD |
на замовлення 2806 шт: термін постачання 14-30 дні (днів) |
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ZMM55-B16_R1_10001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 500mW; 16V; SMD; LL34,MiniMELF; single diode Mounting: SMD Tolerance: ±2% Power dissipation: 0.5W Kind of package: reel; tape Semiconductor structure: single diode Case: LL34; MiniMELF Zener voltage: 16V Type of diode: Zener |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6SMBJ75A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 83.3÷92.1V; 4.9A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 75V Breakdown voltage: 83.3...92.1V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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SR54F-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 5A; reel,tape Kind of package: reel; tape Mounting: SMD Max. forward impulse current: 100A Max. forward voltage: 0.55V Application: automotive industry Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Leakage current: 16mA Case: SMB flat Type of diode: Schottky rectifying |
на замовлення 844 шт: термін постачання 14-30 дні (днів) |
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PEC33712C2A_R1_00001 | PanJit |
Category: Protection diodes - arraysDescription: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD Case: SOT23 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Max. off-state voltage: 7...12V Semiconductor structure: asymmetric; bidirectional Leakage current: 1µA Capacitance: 35pF Type of diode: TVS array Breakdown voltage: 7.5...13.3V Max. forward impulse current: 8A Version: ESD |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MMSZ5231A-AU_R1_000A1 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5231AS-AU_R1_000A1 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1SMA5919-AU_R1_000A1 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
на замовлення 63 шт: термін постачання 14-30 дні (днів) |
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| MBR60200PT_T0_00001 | PanJit |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 60A; TO247AD-3; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 60A Semiconductor structure: common cathode; double Case: TO247AD-3 Max. forward voltage: 0.9V Max. forward impulse current: 0.4kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5SMCJ24CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 38.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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1.5SMCJ24CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 38.6A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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3.0SMCJ24CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 77.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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3.0SMCJ24CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 24V Breakdown voltage: 26.7...30.7V Max. forward impulse current: 77.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
| P6KE20A_R2_00001 | PanJit |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 17.1V Breakdown voltage: 19...21V Max. forward impulse current: 22A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Features of semiconductor devices: glass passivated Manufacturer series: P6KE |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE16A_AY_00001 | PanJit |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 15.2÷16.8V; 67A; unidirectional; DO201AE; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 13.6V Breakdown voltage: 15.2...16.8V Max. forward impulse current: 67A Semiconductor structure: unidirectional Case: DO201AE Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Kind of package: Ammo Pack Features of semiconductor devices: glass passivated |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | |||||||||||||||||||
| MBR60100PT_T0_00001 | PanJit |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 60A; TO247AD-3; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 60A Semiconductor structure: common cathode; double Case: TO247AD-3 Max. forward voltage: 0.8V Max. forward impulse current: 0.4kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBR60150PT_T0_00001 | PanJit |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 60A; TO247AD-3; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 60A Semiconductor structure: common cathode; double Case: TO247AD-3 Max. forward voltage: 0.9V Max. forward impulse current: 0.4kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
1.5SMCJ18A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 51.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
1.5SMCJ18A_R2_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 51.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
|
3.0SMCJ18A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 102.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
3.0SMCJ18A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 18V Breakdown voltage: 20...23.3V Max. forward impulse current: 102.8A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
| PJD45P03E-AU_L2_006A1 | PanJit |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -42A Power dissipation: 21W Case: TO252AA Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 32nC Kind of channel: enhancement Pulsed drain current: -128A Application: automotive industry Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
P6SMBJ58CA-AU_R1_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
P6SMBJ58CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
1.5SMCJ13A-AU_R1_000A1 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 69.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
1.5SMCJ13A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 69.7A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMCJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
3.0SMCJ13A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 14.4÷16.5V; 139.4A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 13V Breakdown voltage: 14.4...16.5V Max. forward impulse current: 139.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 3µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 3.0SMCJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
P4SMAJ6.0A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 38.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P4SMAJ |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
SS2060FL-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 0.7V Application: automotive industry Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 4.3mA Case: SOD123F Type of diode: Schottky rectifying |
на замовлення 3200 шт: термін постачання 14-30 дні (днів) |
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P6SMBJ26CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
|
P6SMBJ26CA-AU_R2_000A1 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMBJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BZX84C2V4-AU_R1_000A1 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 2.4V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
BZX84C2V4_R1_00501 | PanJit |
Category: SMD Zener diodesDescription: Diode: Zener; 410mW; 2.4V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| P4SMAJ24A-AU_R1_000A1 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| P4SMAJ24A_R1_00001 |
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7÷29.5V; 10.3A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| P6KE20A_AY_00001 |
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Kind of package: Ammo Pack
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BC848BW_R1_00001 |
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Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| ZMM55-C12_R1_10001 |
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 12V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 12V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 30140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.42 грн |
| 129+ | 3.20 грн |
| 155+ | 2.66 грн |
| 187+ | 2.20 грн |
| 250+ | 2.02 грн |
| 500+ | 1.76 грн |
| 1000+ | 1.59 грн |
| 2500+ | 1.36 грн |
| 10000+ | 1.30 грн |
| PJA3401A_R1_00001 |
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Виробник: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
On-state resistance: 86mΩ
Mounting: SMD
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -3.6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
On-state resistance: 86mΩ
Mounting: SMD
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -3.6A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
на замовлення 1583 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 26.06 грн |
| 36+ | 11.69 грн |
| 50+ | 9.22 грн |
| 100+ | 8.19 грн |
| 204+ | 4.61 грн |
| 561+ | 4.36 грн |
| SS3060HE-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 3A; reel,tape
Mounting: SMD
Max. forward impulse current: 80A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOD123HE
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 60V; 3A; reel,tape
Mounting: SMD
Max. forward impulse current: 80A
Max. forward voltage: 0.65V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.1mA
Case: SOD123HE
Type of diode: Schottky rectifying
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.26 грн |
| 25+ | 16.93 грн |
| 100+ | 11.34 грн |
| 133+ | 7.07 грн |
| 366+ | 6.66 грн |
| GBJ1510_T0_00601 |
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Виробник: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 240A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 0.24kA
Version: flat
Case: GBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
товару немає в наявності
В кошику
од. на суму грн.
| BZM55-B16_R1_10001 |
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 16V; SMD; MicroMELF; single diode; reel,tape
Mounting: SMD
Tolerance: ±2%
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MicroMELF
Zener voltage: 16V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 16V; SMD; MicroMELF; single diode; reel,tape
Mounting: SMD
Tolerance: ±2%
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MicroMELF
Zener voltage: 16V
Type of diode: Zener
товару немає в наявності
В кошику
од. на суму грн.
| BZQ55-B16_R1_10001 |
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 16V; SMD; QuadroMELF; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: QuadroMELF
Zener voltage: 16V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 16V; SMD; QuadroMELF; single diode; reel,tape
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: QuadroMELF
Zener voltage: 16V
Type of diode: Zener
товару немає в наявності
В кошику
од. на суму грн.
| ZMM55-B9V1_R1_10001 |
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 9.1V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 9.1V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| ZMM55-B22_R1_10001 |
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 22V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 22V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| GBL410_T0_00601 |
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Виробник: PanJit
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBL2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBL2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
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| PDZ13B_R1_00001 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 13V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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| ZMM55-B27_R1_10001 |
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 27V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 27V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
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| ZMM55-B39_R1_10001 |
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 39V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 39V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
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| P6SMB33A-AU_R1_000A1 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
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Мінімальне замовлення: 800 шт
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| P6SMB33A_R1_00001 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 31.4÷34.7V; 13.2A; unidirectional; SMB; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4...34.7V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 800 шт
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| PJX8812_R1_00001 |
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Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
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| PJA3471_R1_00501 |
Виробник: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -900mA
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -3.6A
Gate charge: 8nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -900mA
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -3.6A
Gate charge: 8nC
на замовлення 20415 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 31.85 грн |
| 25+ | 16.51 грн |
| 100+ | 10.52 грн |
| 135+ | 6.98 грн |
| 370+ | 6.57 грн |
| MMSZ5232B-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| MMSZ5232B_R1_00001 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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| MMSZ5232BS-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| MMSZ5232BS_R1_00001 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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| PJD25N06A_L2_00001 |
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Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 20nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 100A
Gate charge: 20nC
Kind of package: reel; tape
на замовлення 973 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 63.71 грн |
| 12+ | 35.82 грн |
| 25+ | 26.87 грн |
| 50+ | 21.77 грн |
| 67+ | 14.13 грн |
| 183+ | 13.31 грн |
| PJD25N06A-AU_L2_000A1 |
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Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
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| PJP125N06SA-AU_T0_006A1 |
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Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
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| RS1004FL_R1_00001 |
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Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.4kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 500ns; SOD123F; Ufmax: 1.3V
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.4kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123F
Type of diode: rectifying
Reverse recovery time: 0.5µs
Mounting: SMD
на замовлення 2806 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.39 грн |
| 69+ | 6.00 грн |
| 80+ | 5.14 грн |
| 100+ | 4.77 грн |
| 270+ | 3.48 грн |
| 743+ | 3.29 грн |
| ZMM55-B16_R1_10001 |
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 16V; SMD; LL34,MiniMELF; single diode
Mounting: SMD
Tolerance: ±2%
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: LL34; MiniMELF
Zener voltage: 16V
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 16V; SMD; LL34,MiniMELF; single diode
Mounting: SMD
Tolerance: ±2%
Power dissipation: 0.5W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: LL34; MiniMELF
Zener voltage: 16V
Type of diode: Zener
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| P6SMBJ75A_R1_00001 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷92.1V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 83.3÷92.1V; 4.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 75V
Breakdown voltage: 83.3...92.1V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
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Мінімальне замовлення: 800 шт
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| SR54F-AU_R1_000A1 |
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 5A; reel,tape
Kind of package: reel; tape
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.55V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Leakage current: 16mA
Case: SMB flat
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 40V; 5A; reel,tape
Kind of package: reel; tape
Mounting: SMD
Max. forward impulse current: 100A
Max. forward voltage: 0.55V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Leakage current: 16mA
Case: SMB flat
Type of diode: Schottky rectifying
на замовлення 844 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.46 грн |
| 18+ | 24.07 грн |
| 20+ | 21.53 грн |
| 25+ | 17.75 грн |
| 90+ | 10.43 грн |
| 248+ | 9.86 грн |
| PEC33712C2A_R1_00001 |
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Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Leakage current: 1µA
Capacitance: 35pF
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Max. off-state voltage: 7...12V
Semiconductor structure: asymmetric; bidirectional
Leakage current: 1µA
Capacitance: 35pF
Type of diode: TVS array
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Version: ESD
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.35 грн |
| 35+ | 11.91 грн |
| 100+ | 8.38 грн |
| 144+ | 6.57 грн |
| 394+ | 6.24 грн |
| 1000+ | 6.00 грн |
| 3000+ | 5.92 грн |
| MMSZ5231A-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| MMSZ5231AS-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| 1SMA5919-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.43 грн |
| 26+ | 15.86 грн |
| MBR60200PT_T0_00001 |
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Виробник: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 60A; TO247AD-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.9V
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 60A; TO247AD-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.9V
Max. forward impulse current: 0.4kA
Kind of package: tube
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| 1.5SMCJ24CA-AU_R1_000A1 |
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Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
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Мінімальне замовлення: 800 шт
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| 1.5SMCJ24CA_R1_00001 |
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Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷30.7V; 38.6A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 38.6A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
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Мінімальне замовлення: 800 шт
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| 3.0SMCJ24CA-AU_R1_000A1 |
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Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
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Мінімальне замовлення: 800 шт
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| 3.0SMCJ24CA_R1_00001 |
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Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 26.7÷30.7V; 77.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...30.7V
Max. forward impulse current: 77.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
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Мінімальне замовлення: 800 шт
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| P6KE20A_R2_00001 |
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Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 19÷21V; 22A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 17.1V
Breakdown voltage: 19...21V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
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Мінімальне замовлення: 4000 шт
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| 1.5KE16A_AY_00001 |
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 15.2÷16.8V; 67A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 15.2÷16.8V; 67A; unidirectional; DO201AE; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13.6V
Breakdown voltage: 15.2...16.8V
Max. forward impulse current: 67A
Semiconductor structure: unidirectional
Case: DO201AE
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
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Мінімальне замовлення: 1250 шт
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| MBR60100PT_T0_00001 |
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Виробник: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 60A; TO247AD-3; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.8V
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 60A; TO247AD-3; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.8V
Max. forward impulse current: 0.4kA
Kind of package: tube
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| MBR60150PT_T0_00001 |
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Виробник: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60A; TO247AD-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.9V
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60A; TO247AD-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.9V
Max. forward impulse current: 0.4kA
Kind of package: tube
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| 1.5SMCJ18A-AU_R1_000A1 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
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Мінімальне замовлення: 800 шт
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| 1.5SMCJ18A_R2_00001 |
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 20÷23.3V; 51.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 51.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
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Мінімальне замовлення: 3000 шт
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| 3.0SMCJ18A-AU_R1_000A1 |
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Application: automotive industry
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| 3.0SMCJ18A_R1_00001 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 20÷23.3V; 102.8A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 18V
Breakdown voltage: 20...23.3V
Max. forward impulse current: 102.8A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
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Мінімальне замовлення: 800 шт
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| PJD45P03E-AU_L2_006A1 |
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Виробник: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Power dissipation: 21W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Pulsed drain current: -128A
Application: automotive industry
Kind of package: reel
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Power dissipation: 21W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Pulsed drain current: -128A
Application: automotive industry
Kind of package: reel
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| P6SMBJ58CA-AU_R1_000A1 |
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
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Мінімальне замовлення: 800 шт
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| P6SMBJ58CA_R1_00001 |
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Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
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Мінімальне замовлення: 800 шт
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| 1.5SMCJ13A-AU_R1_000A1 |
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
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Мінімальне замовлення: 800 шт
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| 1.5SMCJ13A_R1_00001 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 14.4÷16.5V; 69.7A; unidirectional; SMC; 1.5SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 69.7A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
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Мінімальне замовлення: 800 шт
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| 3.0SMCJ13A_R1_00001 |
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Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 14.4÷16.5V; 139.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 139.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 14.4÷16.5V; 139.4A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...16.5V
Max. forward impulse current: 139.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
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Мінімальне замовлення: 800 шт
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| P4SMAJ6.0A_R1_00001 |
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.67÷7.37V; 38.8A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 38.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
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Мінімальне замовлення: 1800 шт
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| SS2060FL-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 4.3mA
Case: SOD123F
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Application: automotive industry
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 4.3mA
Case: SOD123F
Type of diode: Schottky rectifying
на замовлення 3200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.49 грн |
| 39+ | 10.60 грн |
| 100+ | 6.57 грн |
| 181+ | 5.18 грн |
| 497+ | 4.93 грн |
| 1000+ | 4.77 грн |
| P6SMBJ26CA_R1_00001 |
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Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| P6SMBJ26CA-AU_R2_000A1 |
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C2V4-AU_R1_000A1 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX84C2V4_R1_00501 |
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Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 2.4V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.




















