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MMSZ5245B-AU_R1_000A1 MMSZ5245B-AU_R1_000A1 PanJit MMSZ5221B-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MMSZ5245BS_R1_00001 MMSZ5245BS_R1_00001 PanJit MMSZ5221BS_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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MMSZ5245BS-AU_R1_000A1 MMSZ5245BS-AU_R1_000A1 PanJit MMSZ5221BS-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MMSZ5248BS-AU_R1_000A1 MMSZ5248BS-AU_R1_000A1 PanJit MMSZ5221BS-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
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MMSZ5248BS_R1_00001 MMSZ5248BS_R1_00001 PanJit MMSZ5221BS_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
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1.5SMCJ150A_R1_00001 1.5SMCJ150A_R1_00001 PanJit 1.5SMCJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷192.5V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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PJX8828-AU_R1_000A1 PJX8828-AU_R1_000A1 PanJit PJX8828-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
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PJX8828_R1_00001 PJX8828_R1_00001 PanJit PJX8828.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
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BZT52-C2V4S-AU_R1_000A1 BZT52-C2V4S-AU_R1_000A1 PanJit BZT52-C2V4S-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52-C2V4S_R1_00001 BZT52-C2V4S_R1_00001 PanJit BZT52-C2V4S_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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PJW4P06A-AU_R2_007A1 PJW4P06A-AU_R2_007A1 PanJit PJW4P06A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
на замовлення 900 шт:
термін постачання 14-30 дні (днів)
9+53.97 грн
13+32.95 грн
62+15.36 грн
168+14.54 грн
Мінімальне замовлення: 9 шт
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PJW4P06A_R2_00701 PJW4P06A_R2_00701 PanJit Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
на замовлення 1700 шт:
термін постачання 14-30 дні (днів)
9+51.32 грн
13+32.29 грн
72+13.15 грн
197+12.41 грн
Мінімальне замовлення: 9 шт
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PJD16P06A_L2_00001 PJD16P06A_L2_00001 PanJit PJD16P06A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
на замовлення 10418 шт:
термін постачання 14-30 дні (днів)
9+49.55 грн
13+31.88 грн
47+20.38 грн
127+19.23 грн
250+19.14 грн
500+18.49 грн
Мінімальне замовлення: 9 шт
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P6SMBJ22A_R1_00001 P6SMBJ22A_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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P6SMBJ7.0A_R1_00001 P6SMBJ7.0A_R1_00001 PanJit P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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MMSZ5231B-AU_R1_000A1 MMSZ5231B-AU_R1_000A1 PanJit MMSZ5221B-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MMSZ5231B_R1_00001 MMSZ5231B_R1_00001 PanJit MMSZ5221B_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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MMSZ5231BS-AU_R1_000A1 MMSZ5231BS-AU_R1_000A1 PanJit MMSZ5221BS-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MMSZ5231BS_R1_00001 MMSZ5231BS_R1_00001 PanJit MMSZ5221BS_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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PJMF990N65EC_T0_00001 PJMF990N65EC_T0_00001 PanJit PJMF990N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Polarisation: unipolar
Gate charge: 9.7nC
Drain current: 4.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ITO220AB
On-state resistance: 990mΩ
Mounting: THT
Pulsed drain current: 9.5A
Power dissipation: 22.5W
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P6KE10A_AY_00001 PanJit Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 9.5÷10.5V; 41A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 9.5...10.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 41A
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.55V
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 Мінімальне замовлення: 3000 шт
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PJMF080N65FR2_T0_00601 PanJit PJMF080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH080N65FR2_T0_00601 PanJit PJMH080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP080N65FR2_T0_00601 PJMP080N65FR2_T0_00601 PanJit PJMP080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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P4SMAJ13A-AU_R2_000A1 P4SMAJ13A-AU_R2_000A1 PanJit P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 7500 шт
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P4SMAJ13A_R1_00001 P4SMAJ13A_R1_00001 PanJit P4SMA-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
 Мінімальне замовлення: 1800 шт
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P4SMAJ15A_R1_00001 P4SMAJ15A_R1_00001 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA; P4SMAJ
Case: SMA
Mounting: SMD
Manufacturer series: P4SMAJ
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 15V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
на замовлення 2165 шт:
термін постачання 14-30 дні (днів)
20+22.12 грн
26+15.94 грн
33+12.82 грн
100+8.87 грн
500+6.16 грн
1000+5.42 грн
Мінімальне замовлення: 20 шт
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BZX84C15_R1_00001 BZX84C15_R1_00001 PanJit BZX84C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 2727 шт:
термін постачання 14-30 дні (днів)
63+7.08 грн
107+3.86 грн
143+2.88 грн
250+2.71 грн
500+2.46 грн
1000+2.04 грн
Мінімальне замовлення: 63 шт
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BZX84C15-AU_R1_000A1 BZX84C15-AU_R1_000A1 PanJit BZX84C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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PJD80N03_L2_00001 PanJit PJx80N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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PE1605C4E6-AU_S1_000A1 PE1605C4E6-AU_S1_000A1 PanJit PE1605C4E6-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Application: automotive industry
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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PE1605C4E6-AU_R1_000A1 PE1605C4E6-AU_R1_000A1 PanJit Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Application: automotive industry
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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PE1605C4E6_R1_00001 PE1605C4E6_R1_00001 PanJit PE1605C4E6.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
товару немає в наявності
 Мінімальне замовлення: 4000 шт
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P6KE16CA_AY_00001 PanJit Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 13.6V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 15.2...16.8V
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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PJD13N10A_L2_00601 PanJit Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 9000 шт
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1.5SMCJ30CA-AU_R1_000A1 1.5SMCJ30CA-AU_R1_000A1 PanJit 1.5SMCJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1.5SMCJ30CA_R1_00001 1.5SMCJ30CA_R1_00001 PanJit 1.5SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
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3.0SMCJ30CA_R1_00001 3.0SMCJ30CA_R1_00001 PanJit 3.0SMCJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PJD60N04S-AU_L2_002A1 PanJit PJD60N04S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD60N04V-AU_L2_002A1 PanJit PJD60N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
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1SMA4733_R1_00001 1SMA4733_R1_00001 PanJit 1SMA4728_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 425 шт:
термін постачання 14-30 дні (днів)
15+29.55 грн
33+12.49 грн
100+9.70 грн
143+6.57 грн
391+6.24 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
ZMM55-B3V6_R1_10001 ZMM55-B3V6_R1_10001 PanJit Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
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PJT7838_R1_00001 PJT7838_R1_00001 PanJit PJT7838.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 0.95nC
на замовлення 7642 шт:
термін постачання 14-30 дні (днів)
39+11.50 грн
51+8.13 грн
100+7.56 грн
146+6.49 грн
400+6.08 грн
6000+6.00 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
PJT7603_R1_00001 PJT7603_R1_00001 PanJit PJT7603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5/6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of transistor: complementary pair
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
20+22.12 грн
30+13.72 грн
100+7.56 грн
174+5.39 грн
479+5.10 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
PJT7801_R1_00001 PJT7801_R1_00001 PanJit PJT7801.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -2.8A
Gate charge: 2.2nC
на замовлення 2844 шт:
термін постачання 14-30 дні (днів)
13+36.28 грн
25+16.51 грн
55+7.48 грн
100+6.74 грн
171+5.50 грн
468+5.26 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
PJC7404_R1_00001 PJC7404_R1_00001 PanJit PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.4Ω
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
на замовлення 4184 шт:
термін постачання 14-30 дні (днів)
38+11.68 грн
43+9.70 грн
100+8.13 грн
170+5.59 грн
466+5.26 грн
Мінімальне замовлення: 38 шт
В кошику  од. на суму  грн.
P6SMB6.8A_R1_00001 P6SMB6.8A_R1_00001 PanJit P6SMB_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P4SMAJ12CA-AU_R1_000A1 P4SMAJ12CA-AU_R1_000A1 PanJit P4SMAJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
PJX8839_R1_00001 PanJit PJX8839.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Mounting: SMD
Pulsed drain current: 0.2A
Power dissipation: 0.3W
Gate charge: 1.1nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
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P6KE56CA_R2_00001 PanJit P6KE_SERIES.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 7.8A
Features of semiconductor devices: glass passivated
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
MMBTA06W_R1_00001 MMBTA06W_R1_00001 PanJit MMBTA06W.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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ZMM55-B3V3_R1_10001 ZMM55-B3V3_R1_10001 PanJit Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
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ZMM55-C3V3_R1_10001 ZMM55-C3V3_R1_10001 PanJit Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 30000 шт
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BAV99W_R2_00001 BAV99W_R2_00001 PanJit BAW56WSERIES.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Leakage current: 2.5µA
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PJA3400-AU_R1_000A1 PJA3400-AU_R1_000A1 PanJit Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
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P6SMBJ9.0A_R2_00001 P6SMBJ9.0A_R2_00001 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
 Мінімальне замовлення: 3000 шт
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P6SMBJ48A_R2_00001 P6SMBJ48A_R2_00001 PanJit Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
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BZX84C18-AU_R1_000A1 BZX84C18-AU_R1_000A1 PanJit BZX84C2V4-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C18_R1_00501 BZX84C18_R1_00501 PanJit BZX84C2V4_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C18TW_R1_00001 BZX84C18TW_R1_00001 PanJit BZX84C2V4TW_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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MMSZ5245B-AU_R1_000A1 MMSZ5221B-AU_SER.pdf
MMSZ5245B-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 15V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MMSZ5245BS_R1_00001 MMSZ5221BS_SERIES.pdf
MMSZ5245BS_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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MMSZ5245BS-AU_R1_000A1 MMSZ5221BS-AU_SERIES.pdf
MMSZ5245BS-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 15V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MMSZ5248BS-AU_R1_000A1 MMSZ5221BS-AU_SERIES.pdf
MMSZ5248BS-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
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MMSZ5248BS_R1_00001 MMSZ5221BS_SERIES.pdf
MMSZ5248BS_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOD323; single diode; reel,tape
Zener voltage: 18V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 0.2W
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323
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1.5SMCJ150A_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ150A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 167÷192.5V; 6.2A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 150V
Breakdown voltage: 167...192.5V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PJX8828-AU_R1_000A1 PJX8828-AU.pdf
PJX8828-AU_R1_000A1
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
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PJX8828_R1_00001 PJX8828.pdf
PJX8828_R1_00001
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
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BZT52-C2V4S-AU_R1_000A1 BZT52-C2V4S-AU_SERIES.pdf
BZT52-C2V4S-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZT52-C2V4S_R1_00001 BZT52-C2V4S_SERIES.pdf
BZT52-C2V4S_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 2.4V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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PJW4P06A-AU_R2_007A1 PJW4P06A-AU.pdf
PJW4P06A-AU_R2_007A1
Виробник: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
на замовлення 900 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+53.97 грн
13+32.95 грн
62+15.36 грн
168+14.54 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
PJW4P06A_R2_00701
PJW4P06A_R2_00701
Виробник: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
на замовлення 1700 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+51.32 грн
13+32.29 грн
72+13.15 грн
197+12.41 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
PJD16P06A_L2_00001 PJD16P06A.pdf
PJD16P06A_L2_00001
Виробник: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
на замовлення 10418 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+49.55 грн
13+31.88 грн
47+20.38 грн
127+19.23 грн
250+19.14 грн
500+18.49 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
P6SMBJ22A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ22A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
P6SMBJ7.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.0A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
MMSZ5231B-AU_R1_000A1 MMSZ5221B-AU_SER.pdf
MMSZ5231B-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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В кошику  од. на суму  грн.
MMSZ5231B_R1_00001 MMSZ5221B_SERIES.pdf
MMSZ5231B_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 5.1V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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В кошику  од. на суму  грн.
MMSZ5231BS-AU_R1_000A1 MMSZ5221BS-AU_SERIES.pdf
MMSZ5231BS-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
MMSZ5231BS_R1_00001 MMSZ5221BS_SERIES.pdf
MMSZ5231BS_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
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PJMF990N65EC_T0_00001 PJMF990N65EC.pdf
PJMF990N65EC_T0_00001
Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Polarisation: unipolar
Gate charge: 9.7nC
Drain current: 4.7A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ITO220AB
On-state resistance: 990mΩ
Mounting: THT
Pulsed drain current: 9.5A
Power dissipation: 22.5W
товару немає в наявності
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P6KE10A_AY_00001
Виробник: PanJit
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.6kW; 9.5÷10.5V; 41A; unidirectional; DO15; P6KE
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 9.5...10.5V
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 10µA
Kind of package: Ammo Pack
Manufacturer series: P6KE
Max. forward impulse current: 41A
Features of semiconductor devices: glass passivated
Max. off-state voltage: 8.55V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJMF080N65FR2_T0_00601 PJMF080N65FR2
Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH080N65FR2_T0_00601 PJMH080N65FR2
Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
PJMP080N65FR2_T0_00601 PJMP080N65FR2
PJMP080N65FR2_T0_00601
Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
P4SMAJ13A-AU_R2_000A1 P4SMA-AU_SERIES.pdf
P4SMAJ13A-AU_R2_000A1
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику  од. на суму  грн.
P4SMAJ13A_R1_00001 P4SMA-AU_SERIES.pdf
P4SMAJ13A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; SMA; P4SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P4SMAJ
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
P4SMAJ15A_R1_00001
P4SMAJ15A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; SMA; P4SMAJ
Case: SMA
Mounting: SMD
Manufacturer series: P4SMAJ
Peak pulse power dissipation: 0.4kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 15V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Type of diode: TVS
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
на замовлення 2165 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.12 грн
26+15.94 грн
33+12.82 грн
100+8.87 грн
500+6.16 грн
1000+5.42 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BZX84C15_R1_00001 BZX84C2V4_SERIES.pdf
BZX84C15_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 2727 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
63+7.08 грн
107+3.86 грн
143+2.88 грн
250+2.71 грн
500+2.46 грн
1000+2.04 грн
Мінімальне замовлення: 63 шт
В кошику  од. на суму  грн.
BZX84C15-AU_R1_000A1 BZX84C2V4-AU_SER.pdf
BZX84C15-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 15V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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В кошику  од. на суму  грн.
PJD80N03_L2_00001 PJx80N03.pdf
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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PE1605C4E6-AU_S1_000A1 PE1605C4E6-AU.pdf
PE1605C4E6-AU_S1_000A1
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Application: automotive industry
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PE1605C4E6-AU_R1_000A1
PE1605C4E6-AU_R1_000A1
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Application: automotive industry
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
PE1605C4E6_R1_00001 PE1605C4E6.pdf
PE1605C4E6_R1_00001
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 4A
Max. off-state voltage: 5.5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT563
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 4
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
P6KE16CA_AY_00001
Виробник: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 15.2÷16.8V; 27A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 13.6V
Max. forward impulse current: 27A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Breakdown voltage: 15.2...16.8V
Manufacturer series: P6KE
Features of semiconductor devices: glass passivated
Kind of package: Ammo Pack
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
PJD13N10A_L2_00601
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику  од. на суму  грн.
1.5SMCJ30CA-AU_R1_000A1 1.5SMCJ-AU_SERIES.pdf
1.5SMCJ30CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
1.5SMCJ30CA_R1_00001 1.5SMCJ_SERIES.pdf
1.5SMCJ30CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷38.3V; 31A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
3.0SMCJ30CA_R1_00001 3.0SMCJ_SERIES.pdf
3.0SMCJ30CA_R1_00001
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 33.3÷38.3V; 62A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...38.3V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 3µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 3.0SMCJ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
PJD60N04S-AU_L2_002A1 PJD60N04S-AU.pdf
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD60N04V-AU_L2_002A1 PJD60N04V-AU.pdf
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
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1SMA4733_R1_00001 1SMA4728_SERIES.pdf
1SMA4733_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 5.1V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 425 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
15+29.55 грн
33+12.49 грн
100+9.70 грн
143+6.57 грн
391+6.24 грн
Мінімальне замовлення: 15 шт
В кошику  од. на суму  грн.
ZMM55-B3V6_R1_10001
ZMM55-B3V6_R1_10001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
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PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 0.95nC
на замовлення 7642 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
39+11.50 грн
51+8.13 грн
100+7.56 грн
146+6.49 грн
400+6.08 грн
6000+6.00 грн
Мінімальне замовлення: 39 шт
В кошику  од. на суму  грн.
PJT7603_R1_00001 PJT7603.pdf
PJT7603_R1_00001
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5/6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of transistor: complementary pair
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
20+22.12 грн
30+13.72 грн
100+7.56 грн
174+5.39 грн
479+5.10 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
PJT7801_R1_00001 PJT7801.pdf
PJT7801_R1_00001
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.7A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -2.8A
Gate charge: 2.2nC
на замовлення 2844 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
13+36.28 грн
25+16.51 грн
55+7.48 грн
100+6.74 грн
171+5.50 грн
468+5.26 грн
Мінімальне замовлення: 13 шт
В кошику  од. на суму  грн.
PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.4Ω
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
на замовлення 4184 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
38+11.68 грн
43+9.70 грн
100+8.13 грн
170+5.59 грн
466+5.26 грн
Мінімальне замовлення: 38 шт
В кошику  од. на суму  грн.
P6SMB6.8A_R1_00001 P6SMB_SERIES.pdf
P6SMB6.8A_R1_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.45÷7.14V; 57A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 800 шт
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P4SMAJ12CA-AU_R1_000A1 P4SMAJ-AU_SERIES.pdf
P4SMAJ12CA-AU_R1_000A1
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику  од. на суму  грн.
PJX8839_R1_00001 PJX8839.pdf
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Mounting: SMD
Pulsed drain current: 0.2A
Power dissipation: 0.3W
Gate charge: 1.1nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
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P6KE56CA_R2_00001 P6KE_SERIES.pdf
Виробник: PanJit
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 53.2÷58.8V; 7.8A; bidirectional; DO15; 0.6kW; P6KE
Type of diode: TVS
Max. off-state voltage: 47.8V
Breakdown voltage: 53.2...58.8V
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.6kW
Manufacturer series: P6KE
Max. forward impulse current: 7.8A
Features of semiconductor devices: glass passivated
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
MMBTA06W_R1_00001 MMBTA06W.pdf
MMBTA06W_R1_00001
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 0.225W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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ZMM55-B3V3_R1_10001
ZMM55-B3V3_R1_10001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
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ZMM55-C3V3_R1_10001
ZMM55-C3V3_R1_10001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.3V; SMD; LL34,MiniMELF; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: LL34; MiniMELF
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику  од. на суму  грн.
BAV99W_R2_00001 BAW56WSERIES.pdf
BAV99W_R2_00001
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOT323; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT323
Kind of package: reel; tape
Max. forward impulse current: 4A
Max. forward voltage: 1.25V
Leakage current: 2.5µA
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PJA3400-AU_R1_000A1
PJA3400-AU_R1_000A1
Виробник: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
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P6SMBJ9.0A_R2_00001
P6SMBJ9.0A_R2_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
P6SMBJ48A_R2_00001
P6SMBJ48A_R2_00001
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMBJ
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BZX84C18-AU_R1_000A1 BZX84C2V4-AU_SER.pdf
BZX84C18-AU_R1_000A1
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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BZX84C18_R1_00501 BZX84C2V4_SERIES.pdf
BZX84C18_R1_00501
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 18V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
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BZX84C18TW_R1_00001 BZX84C2V4TW_SER.pdf
BZX84C18TW_R1_00001
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 18V; SMD; SOT363; triple independent
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT363
Semiconductor structure: triple independent
Kind of package: reel; tape
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