| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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MER2DMA_R1_00601 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A Reverse recovery time: 35ns Mounting: SMD Max. forward impulse current: 60A Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 40µA Case: SMA Type of diode: rectifying |
на замовлення 1798 шт: термін постачання 14-30 дні (днів) |
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MER2002CT_T0_00601 | PanJit |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 20A; Ifsm: 170A; ITO220AB; tube; 47ns Reverse recovery time: 47ns Mounting: THT Max. forward impulse current: 170A Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 20A Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 90µA Case: ITO220AB Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MER2002FCT_T0_00601 | PanJit |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 20A; Ifsm: 170A; ITO220AB; tube; 47ns Reverse recovery time: 47ns Mounting: THT Max. forward impulse current: 170A Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 20A Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 90µA Case: ITO220AB Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MER2DMA-AU_R2_006A1 | PanJit |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A Reverse recovery time: 35ns Mounting: SMD Max. forward impulse current: 60A Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Application: automotive industry Max. off-state voltage: 200V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 40µA Case: SMA Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZD27C15P_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 800mW; 15V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.8W Zener voltage: 15V Mounting: SMD Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJS6812_S1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363 Mounting: SMD Polarisation: unipolar Drain current: 0.36A Kind of channel: enhancement Drain-source voltage: 50V Type of transistor: N-MOSFET x2 Gate-source voltage: 20V Kind of package: reel; tape Case: SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PJQ5453E-AU_R2_002A1 | PanJit |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 40V; 16A; DFN5060-8 Case: DFN5060-8 Mounting: SMD Polarisation: unipolar Drain current: 16A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: 25V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PJQ5538S6C-AU_R2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 335A; DFN5060X-8 Mounting: SMD Polarisation: unipolar Drain current: 335A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060X-8 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | |||||||||||||||||
| PJQ5538S6VC-AU_R2_002A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 310A; DFN5060X-8 Mounting: SMD Polarisation: unipolar Drain current: 310A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060X-8 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | |||||||||||||||||
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BC856A_R1_00001 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856A-AU_R1_000A1 | PanJit |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT23; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PEC3815AS-AU_R1_000A1 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 16V; 4A; bidirectional; SOD123; Ch: 1 Case: SOD123 Mounting: SMD Number of channels: 1 Application: automotive industry Max. off-state voltage: 15V Semiconductor structure: bidirectional Leakage current: 0.5µA Capacitance: 40pF Type of diode: TVS Breakdown voltage: 16V Max. forward impulse current: 4A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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PZS51A7V5CS_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 7.5V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Mounting: SMD Tolerance: ±2% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P4SMA7.5A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 7.13÷7.88V; 37A; unidirectional; SMA; reel,tape Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: unidirectional Kind of package: reel; tape Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Max. off-state voltage: 6.4V Leakage current: 0.5mA Breakdown voltage: 7.13...7.88V Max. forward impulse current: 37A |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
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P4SMA75A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 71.3÷78.8V; 4.1A; unidirectional; SMA; reel,tape Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: unidirectional Kind of package: reel; tape Manufacturer series: P4SMA Peak pulse power dissipation: 0.4kW Max. off-state voltage: 64.1V Leakage current: 1µA Breakdown voltage: 71.3...78.8V Max. forward impulse current: 4.1A |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
| PM30225Q-0405B_R2_00301 | PanJit |
Category: Motor and PWM drivers Description: IC: driver; system basis chip SBC; I2C,UART; TSSOP25; Ch: 3 Type of integrated circuit: driver Kind of integrated circuit: system basis chip SBC Case: TSSOP25 Number of channels: 3 Integrated circuit features: motor gate driver unit GDU Mounting: SMD Operating temperature: -40...105°C Application: 3-Phase BLDC/PMSM motor control Kind of output: gate driver Interface: I2C; UART Operating voltage: 5...24V DC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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1N4148-35_AY_10001 | PanJit |
Category: THT universal diodes Description: Diode: switching; THT; 75V; 0.15A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Case: DO35 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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1N4148-35_R2_10001 | PanJit |
Category: THT universal diodes Description: Diode: switching; THT; 75V; 0.15A; DO35 Type of diode: switching Mounting: THT Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Case: DO35 |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||||
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SB54AFC-AU_R1_000A1 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMAF-C; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMAF-C Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.54V Kind of package: reel; tape Max. forward impulse current: 100A Application: automotive industry Leakage current: 30mA |
на замовлення 2418 шт: термін постачання 14-30 дні (днів) |
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| PE4205M1Q_R1_00501 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1 Mounting: SMD Breakdown voltage: 6V Max. forward impulse current: 25A Max. off-state voltage: 5V Semiconductor structure: unidirectional Leakage current: 1µA Case: DFN1006-2 Capacitance: 0.25nF Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| PE4207M1Q_R1_00501 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 7.8V; 21A; unidirectional; DFN1006-2; Ch: 1 Mounting: SMD Breakdown voltage: 7.8V Max. forward impulse current: 21A Max. off-state voltage: 7V Semiconductor structure: unidirectional Leakage current: 1µA Case: DFN1006-2 Capacitance: 0.2nF Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
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PE4218CS_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 24V; 9A; unidirectional; SOD323; Ch: 1 Mounting: SMD Breakdown voltage: 24V Max. forward impulse current: 9A Max. off-state voltage: 18V Semiconductor structure: unidirectional Leakage current: 24µA Case: SOD323 Capacitance: 90pF Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PE4220CS_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 26V; 8A; unidirectional; SOD323; Ch: 1 Mounting: SMD Breakdown voltage: 26V Max. forward impulse current: 8A Max. off-state voltage: 20V Semiconductor structure: unidirectional Leakage current: 26µA Case: SOD323 Capacitance: 60pF Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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PE1403M1Q_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS array; 4V; 16A; unidirectional; ESD; DFN1006-2; Ch: 1 Mounting: SMD Breakdown voltage: 4V Max. forward impulse current: 16A Version: ESD Application: USB Max. off-state voltage: 3.3V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 50nA Case: DFN1006-2 Capacitance: 0.4pF Type of diode: TVS array Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PE1403M4Q_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 4V; 1A; unidirectional; DFN2510-10; Ch: 4 Mounting: SMD Breakdown voltage: 4V Max. forward impulse current: 1A Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Leakage current: 50nA Case: DFN2510-10 Capacitance: 0.4pF Type of diode: TVS Number of channels: 4 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| PE1403S8Q_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 4V; 3A; unidirectional; uDFN9; Ch: 8 Mounting: SMD Breakdown voltage: 4V Max. forward impulse current: 3A Max. off-state voltage: 3.3V Semiconductor structure: unidirectional Leakage current: 50nA Case: uDFN9 Capacitance: 0.4pF Type of diode: TVS Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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1.5SMC6.8CA_R1_00001 | PanJit |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.45÷7.14V; 143A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5.8V Breakdown voltage: 6.45...7.14V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 2mA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: 1.5SMC |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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PJA3401-AU_R1_000A1 | PanJit |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6 Mounting: SMD Polarisation: unipolar Drain current: -3.2A Kind of channel: enhancement Drain-source voltage: -30V Application: automotive industry Type of transistor: P-MOSFET x2 Gate-source voltage: 12V Kind of package: reel; tape Case: SOT23-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJA3401_R1_005A1 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6 Mounting: SMD Polarisation: unipolar Drain current: 4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: 20V Kind of package: reel; tape Case: SOT23-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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P6SMB350A_R1_00001 | PanJit |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 300V Breakdown voltage: 332...368V Max. forward impulse current: 1.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: reel; tape Manufacturer series: P6SMB |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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BZX84B39_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 39V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 39V Mounting: SMD Tolerance: ±2% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 35971 шт: термін постачання 14-30 дні (днів) |
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BZX84B10_R2_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 10V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 22855 шт: термін постачання 14-30 дні (днів) |
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PCDB10120G1_R2_00001 | PanJit |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape Max. off-state voltage: 1.2kV Load current: 10A Max. forward impulse current: 0.64kA Case: TO263 Kind of package: reel; tape Power dissipation: 164.8W Technology: SiC Max. load current: 76A Semiconductor structure: single diode Leakage current: 0.1mA Type of diode: Schottky rectifying Mounting: SMD Max. forward voltage: 2V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJX8802_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563 Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJX8808_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563 Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJX8838_R1_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; SOT563 Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 68A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJX8601_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563 Drain-source voltage: 20V Type of transistor: N/P-MOSFET Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJX8803_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563 Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJX8805_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563 Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PJX8807_R1_00001 | PanJit |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563 Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PJX8872B_R1_00001 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Pulsed drain current: 0.2A Power dissipation: 0.3W Case: DFN5060-8 Gate-source voltage: 20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.82nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PJA3460-AU_R1_000A1 | PanJit |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23 Mounting: SMD Pulsed drain current: 10A Power dissipation: 1.25W Gate charge: 9.3nC Polarisation: unipolar Drain current: 2.5A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 90mΩ |
на замовлення 678 шт: термін постачання 14-30 дні (днів) |
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PJP100N06SA-AU_T0_006A1 | PanJit |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 95A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 95A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of channel: enhancement Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX584C5V6_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 5.6V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 4998 шт: термін постачання 14-30 дні (днів) |
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BZX584C33-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 33V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX584C16_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 16V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX584C5V1_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 5.1V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX584C6V8-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 6.8V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX584C3V3_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 3.3V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX584C7V5-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 7.5V; SMD; SOD523; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Case: SOD523 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC847CS_R1_00001 | PanJit |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.15W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SOT363 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PCDF0865G1_T0_00601 | PanJit |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA Max. off-state voltage: 650V Load current: 8A Max. forward impulse current: 0.48kA Case: ITO220AC Kind of package: tube Max. forward voltage: 1.8V Power dissipation: 78.1W Technology: SiC Max. load current: 28A Semiconductor structure: single diode Leakage current: 60µA Type of diode: Schottky rectifying Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PEC3107S1Q_R1_00001 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 8V; 2A; bidirectional; DFN0603-2; Ch: 1 Mounting: SMD Breakdown voltage: 8V Max. forward impulse current: 2A Max. off-state voltage: 7V Semiconductor structure: bidirectional Leakage current: 1µA Case: DFN0603-2 Capacitance: 10pF Type of diode: TVS Number of channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
| PS8A12-DHA_R1_00301 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS; 5V; 40A; unidirectional; Ch: 8 Type of diode: TVS Breakdown voltage: 5V Max. forward impulse current: 40A Semiconductor structure: unidirectional Mounting: SMD Max. off-state voltage: 2.5V Leakage current: 1µA Number of channels: 8 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| PS8A13-DHA_R1_00301 | PanJit |
Category: Protection diodes - arrays Description: Diode: TVS Type of diode: TVS Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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BZT52-C56S-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 56V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52-C56S_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 56V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
 |
BZT52-B39_R1_00001 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 39V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 39V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52-B39-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 410mW; 39V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.41W Zener voltage: 39V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52-B39S-AU_R1_000A1 | PanJit |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 39V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.2W Zener voltage: 39V Mounting: SMD Tolerance: ±2% Case: SOD323 Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| MER2DMA_R1_00601 |
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A
Reverse recovery time: 35ns
Mounting: SMD
Max. forward impulse current: 60A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A
Reverse recovery time: 35ns
Mounting: SMD
Max. forward impulse current: 60A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SMA
Type of diode: rectifying
на замовлення 1798 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.58 грн |
| 34+ | 12.24 грн |
| 50+ | 9.78 грн |
| 100+ | 8.71 грн |
| 250+ | 7.31 грн |
| 500+ | 6.66 грн |
| 1000+ | 5.83 грн |
| MER2002CT_T0_00601 |
|
Виробник: PanJit
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; Ifsm: 170A; ITO220AB; tube; 47ns
Reverse recovery time: 47ns
Mounting: THT
Max. forward impulse current: 170A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 20A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 90µA
Case: ITO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; Ifsm: 170A; ITO220AB; tube; 47ns
Reverse recovery time: 47ns
Mounting: THT
Max. forward impulse current: 170A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 20A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 90µA
Case: ITO220AB
Type of diode: rectifying
товару немає в наявності
В кошику
од. на суму грн.
| MER2002FCT_T0_00601 |
|
Виробник: PanJit
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; Ifsm: 170A; ITO220AB; tube; 47ns
Reverse recovery time: 47ns
Mounting: THT
Max. forward impulse current: 170A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 20A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 90µA
Case: ITO220AB
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 20A; Ifsm: 170A; ITO220AB; tube; 47ns
Reverse recovery time: 47ns
Mounting: THT
Max. forward impulse current: 170A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 20A
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 90µA
Case: ITO220AB
Type of diode: rectifying
товару немає в наявності
В кошику
од. на суму грн.
| MER2DMA-AU_R2_006A1 |
|
Виробник: PanJit
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A
Reverse recovery time: 35ns
Mounting: SMD
Max. forward impulse current: 60A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SMA
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SMA; Ufmax: 0.95V; Ifsm: 60A
Reverse recovery time: 35ns
Mounting: SMD
Max. forward impulse current: 60A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Application: automotive industry
Max. off-state voltage: 200V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 40µA
Case: SMA
Type of diode: rectifying
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P_R1_00001 |
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 800mW; 15V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.8W
Zener voltage: 15V
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 800mW; 15V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.8W
Zener voltage: 15V
Mounting: SMD
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJS6812_S1_00001 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: N-MOSFET x2
Gate-source voltage: 20V
Kind of package: reel; tape
Case: SOT363
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Kind of channel: enhancement
Drain-source voltage: 50V
Type of transistor: N-MOSFET x2
Gate-source voltage: 20V
Kind of package: reel; tape
Case: SOT363
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5453E-AU_R2_002A1 |
|
Виробник: PanJit
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 40V; 16A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 25V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 40V; 16A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 25V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PJQ5538S6C-AU_R2_002A1 |
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 335A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 335A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 335A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 335A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| PJQ5538S6VC-AU_R2_002A1 |
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 310A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 310A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 310A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 310A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| BC856A_R1_00001 |
|
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BC856A-AU_R1_000A1 |
|
Виробник: PanJit
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; SOT23; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| PEC3815AS-AU_R1_000A1 |
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 16V; 4A; bidirectional; SOD123; Ch: 1
Case: SOD123
Mounting: SMD
Number of channels: 1
Application: automotive industry
Max. off-state voltage: 15V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Capacitance: 40pF
Type of diode: TVS
Breakdown voltage: 16V
Max. forward impulse current: 4A
Category: Protection diodes - arrays
Description: Diode: TVS; 16V; 4A; bidirectional; SOD123; Ch: 1
Case: SOD123
Mounting: SMD
Number of channels: 1
Application: automotive industry
Max. off-state voltage: 15V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Capacitance: 40pF
Type of diode: TVS
Breakdown voltage: 16V
Max. forward impulse current: 4A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PZS51A7V5CS_R1_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA7.5A_R1_00001 |
|
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.13÷7.88V; 37A; unidirectional; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.4V
Leakage current: 0.5mA
Breakdown voltage: 7.13...7.88V
Max. forward impulse current: 37A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 7.13÷7.88V; 37A; unidirectional; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 6.4V
Leakage current: 0.5mA
Breakdown voltage: 7.13...7.88V
Max. forward impulse current: 37A
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| P4SMA75A_R1_00001 |
|
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.3÷78.8V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64.1V
Leakage current: 1µA
Breakdown voltage: 71.3...78.8V
Max. forward impulse current: 4.1A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 71.3÷78.8V; 4.1A; unidirectional; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Kind of package: reel; tape
Manufacturer series: P4SMA
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 64.1V
Leakage current: 1µA
Breakdown voltage: 71.3...78.8V
Max. forward impulse current: 4.1A
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| PM30225Q-0405B_R2_00301 |
|
Виробник: PanJit
Category: Motor and PWM drivers
Description: IC: driver; system basis chip SBC; I2C,UART; TSSOP25; Ch: 3
Type of integrated circuit: driver
Kind of integrated circuit: system basis chip SBC
Case: TSSOP25
Number of channels: 3
Integrated circuit features: motor gate driver unit GDU
Mounting: SMD
Operating temperature: -40...105°C
Application: 3-Phase BLDC/PMSM motor control
Kind of output: gate driver
Interface: I2C; UART
Operating voltage: 5...24V DC
Category: Motor and PWM drivers
Description: IC: driver; system basis chip SBC; I2C,UART; TSSOP25; Ch: 3
Type of integrated circuit: driver
Kind of integrated circuit: system basis chip SBC
Case: TSSOP25
Number of channels: 3
Integrated circuit features: motor gate driver unit GDU
Mounting: SMD
Operating temperature: -40...105°C
Application: 3-Phase BLDC/PMSM motor control
Kind of output: gate driver
Interface: I2C; UART
Operating voltage: 5...24V DC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 1N4148-35_AY_10001 |
Виробник: PanJit
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: DO35
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: DO35
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| 1N4148-35_R2_10001 |
Виробник: PanJit
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: DO35
Category: THT universal diodes
Description: Diode: switching; THT; 75V; 0.15A; DO35
Type of diode: switching
Mounting: THT
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Case: DO35
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| SB54AFC-AU_R1_000A1 |
|
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Leakage current: 30mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Leakage current: 30mA
на замовлення 2418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.50 грн |
| 48+ | 8.63 грн |
| 100+ | 8.30 грн |
| 500+ | 8.05 грн |
| PE4205M1Q_R1_00501 |
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 25A
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.25nF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 25A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 25A
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.25nF
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 10000 шт
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| PE4207M1Q_R1_00501 |
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 7.8V; 21A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Breakdown voltage: 7.8V
Max. forward impulse current: 21A
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.2nF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 7.8V; 21A; unidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Breakdown voltage: 7.8V
Max. forward impulse current: 21A
Max. off-state voltage: 7V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.2nF
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 10000 шт
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| PE4218CS_R1_00001 |
|
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 24V; 9A; unidirectional; SOD323; Ch: 1
Mounting: SMD
Breakdown voltage: 24V
Max. forward impulse current: 9A
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Leakage current: 24µA
Case: SOD323
Capacitance: 90pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 24V; 9A; unidirectional; SOD323; Ch: 1
Mounting: SMD
Breakdown voltage: 24V
Max. forward impulse current: 9A
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Leakage current: 24µA
Case: SOD323
Capacitance: 90pF
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 5000 шт
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| PE4220CS_R1_00001 |
|
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 26V; 8A; unidirectional; SOD323; Ch: 1
Mounting: SMD
Breakdown voltage: 26V
Max. forward impulse current: 8A
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Leakage current: 26µA
Case: SOD323
Capacitance: 60pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 26V; 8A; unidirectional; SOD323; Ch: 1
Mounting: SMD
Breakdown voltage: 26V
Max. forward impulse current: 8A
Max. off-state voltage: 20V
Semiconductor structure: unidirectional
Leakage current: 26µA
Case: SOD323
Capacitance: 60pF
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 5000 шт
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| PE1403M1Q_R1_00001 |
|
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; ESD; DFN1006-2; Ch: 1
Mounting: SMD
Breakdown voltage: 4V
Max. forward impulse current: 16A
Version: ESD
Application: USB
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: DFN1006-2
Capacitance: 0.4pF
Type of diode: TVS array
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; ESD; DFN1006-2; Ch: 1
Mounting: SMD
Breakdown voltage: 4V
Max. forward impulse current: 16A
Version: ESD
Application: USB
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: DFN1006-2
Capacitance: 0.4pF
Type of diode: TVS array
Number of channels: 1
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| PE1403M4Q_R1_00001 |
|
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 1A; unidirectional; DFN2510-10; Ch: 4
Mounting: SMD
Breakdown voltage: 4V
Max. forward impulse current: 1A
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: DFN2510-10
Capacitance: 0.4pF
Type of diode: TVS
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 1A; unidirectional; DFN2510-10; Ch: 4
Mounting: SMD
Breakdown voltage: 4V
Max. forward impulse current: 1A
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: DFN2510-10
Capacitance: 0.4pF
Type of diode: TVS
Number of channels: 4
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Мінімальне замовлення: 5000 шт
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| PE1403S8Q_R1_00001 |
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 3A; unidirectional; uDFN9; Ch: 8
Mounting: SMD
Breakdown voltage: 4V
Max. forward impulse current: 3A
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: uDFN9
Capacitance: 0.4pF
Type of diode: TVS
Number of channels: 8
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 3A; unidirectional; uDFN9; Ch: 8
Mounting: SMD
Breakdown voltage: 4V
Max. forward impulse current: 3A
Max. off-state voltage: 3.3V
Semiconductor structure: unidirectional
Leakage current: 50nA
Case: uDFN9
Capacitance: 0.4pF
Type of diode: TVS
Number of channels: 8
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Мінімальне замовлення: 3000 шт
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| 1.5SMC6.8CA_R1_00001 |
|
Виробник: PanJit
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.45÷7.14V; 143A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMC
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.45÷7.14V; 143A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.45...7.14V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: 1.5SMC
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Мінімальне замовлення: 800 шт
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| PJA3401-AU_R1_000A1 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET x2
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -3.2A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: -3.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Application: automotive industry
Type of transistor: P-MOSFET x2
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
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| PJA3401_R1_005A1 |
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 20V
Kind of package: reel; tape
Case: SOT23-6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Mounting: SMD
Polarisation: unipolar
Drain current: 4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 20V
Kind of package: reel; tape
Case: SOT23-6
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| P6SMB350A_R1_00001 |
|
Виробник: PanJit
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 332...368V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 332÷368V; 1.3A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 300V
Breakdown voltage: 332...368V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Manufacturer series: P6SMB
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Мінімальне замовлення: 800 шт
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| BZX84B39_R1_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 39V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 39V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 35971 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 14.60 грн |
| 44+ | 9.45 грн |
| 68+ | 6.10 грн |
| 100+ | 4.36 грн |
| 250+ | 2.97 грн |
| 500+ | 2.44 грн |
| 772+ | 1.22 грн |
| 2125+ | 1.15 грн |
| BZX84B10_R2_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 10V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 10V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 22855 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 129+ | 3.44 грн |
| 215+ | 1.91 грн |
| 271+ | 1.52 грн |
| 334+ | 1.23 грн |
| 348+ | 1.18 грн |
| 812+ | 1.16 грн |
| 1000+ | 1.14 грн |
| 2234+ | 1.09 грн |
| PCDB10120G1_R2_00001 |
|
Виробник: PanJit
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 0.64kA
Case: TO263
Kind of package: reel; tape
Power dissipation: 164.8W
Technology: SiC
Max. load current: 76A
Semiconductor structure: single diode
Leakage current: 0.1mA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 2V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SiC; SMD; 1.2kV; 10A; reel,tape
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 0.64kA
Case: TO263
Kind of package: reel; tape
Power dissipation: 164.8W
Technology: SiC
Max. load current: 76A
Semiconductor structure: single diode
Leakage current: 0.1mA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward voltage: 2V
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| PJX8802_R1_00001 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
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| PJX8808_R1_00001 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
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| PJX8838_R1_00001 |
|
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; SOT563
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; SOT563
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
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| PJX8601_R1_00001 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
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| PJX8803_R1_00001 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
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| PJX8805_R1_00001 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
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| PJX8807_R1_00001 |
|
Виробник: PanJit
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 500mA; SOT563
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
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| PJX8872B_R1_00001 |
|
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Pulsed drain current: 0.2A
Power dissipation: 0.3W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 0.2A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Pulsed drain current: 0.2A
Power dissipation: 0.3W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.82nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PJA3460-AU_R1_000A1 |
Виробник: PanJit
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 2.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 90mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.5A; Idm: 10A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 1.25W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 2.5A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 90mΩ
на замовлення 678 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.13 грн |
| 100+ | 16.84 грн |
| 149+ | 6.33 грн |
| 408+ | 6.00 грн |
| PJP100N06SA-AU_T0_006A1 |
|
Виробник: PanJit
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 95A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 95A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
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| BZX584C5V6_R1_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.6V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 4998 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 51+ | 8.84 грн |
| 77+ | 5.39 грн |
| 111+ | 3.71 грн |
| 130+ | 3.16 грн |
| 445+ | 2.12 грн |
| 500+ | 2.11 грн |
| 1000+ | 2.00 грн |
| BZX584C33-AU_R1_000A1 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 33V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 33V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BZX584C16_R1_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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В кошику
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| BZX584C5V1_R1_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 5.1V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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| BZX584C6V8-AU_R1_000A1 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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В кошику
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| BZX584C3V3_R1_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
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В кошику
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| BZX584C7V5-AU_R1_000A1 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 7.5V; SMD; SOD523; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Case: SOD523
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BC847CS_R1_00001 |
|
Виробник: PanJit
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.15W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.15W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
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В кошику
од. на суму грн.
| PCDF0865G1_T0_00601 |
|
Виробник: PanJit
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Max. off-state voltage: 650V
Load current: 8A
Max. forward impulse current: 0.48kA
Case: ITO220AC
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 78.1W
Technology: SiC
Max. load current: 28A
Semiconductor structure: single diode
Leakage current: 60µA
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Max. off-state voltage: 650V
Load current: 8A
Max. forward impulse current: 0.48kA
Case: ITO220AC
Kind of package: tube
Max. forward voltage: 1.8V
Power dissipation: 78.1W
Technology: SiC
Max. load current: 28A
Semiconductor structure: single diode
Leakage current: 60µA
Type of diode: Schottky rectifying
Mounting: THT
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од. на суму грн.
| PEC3107S1Q_R1_00001 |
|
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 2A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Breakdown voltage: 8V
Max. forward impulse current: 2A
Max. off-state voltage: 7V
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DFN0603-2
Capacitance: 10pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 2A; bidirectional; DFN0603-2; Ch: 1
Mounting: SMD
Breakdown voltage: 8V
Max. forward impulse current: 2A
Max. off-state voltage: 7V
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DFN0603-2
Capacitance: 10pF
Type of diode: TVS
Number of channels: 1
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Мінімальне замовлення: 10000 шт
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од. на суму грн.
| PS8A12-DHA_R1_00301 |
|
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 40A; unidirectional; Ch: 8
Type of diode: TVS
Breakdown voltage: 5V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 2.5V
Leakage current: 1µA
Number of channels: 8
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 40A; unidirectional; Ch: 8
Type of diode: TVS
Breakdown voltage: 5V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Mounting: SMD
Max. off-state voltage: 2.5V
Leakage current: 1µA
Number of channels: 8
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| PS8A13-DHA_R1_00301 |
Виробник: PanJit
Category: Protection diodes - arrays
Description: Diode: TVS
Type of diode: TVS
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS
Type of diode: TVS
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| BZT52-C56S-AU_R1_000A1 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 56V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 56V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BZT52-C56S_R1_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 56V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 56V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
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| BZT52-B39_R1_00001 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 39V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 39V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
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| BZT52-B39-AU_R1_000A1 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 39V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 410mW; 39V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| BZT52-B39S-AU_R1_000A1 |
|
Виробник: PanJit
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 39V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 39V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 39V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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