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RBU603M RBU603M Rectron USA rbu601m-rbu607m.pdf Description: BRIDGE RECT GLASS 200V 6A RBU
Packaging: Tube
Package / Case: 4-SIP, RBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
RBU607M RBU607M Rectron USA rbu601m-rbu607m.pdf Description: BRIDGE RECT GLASS 1000V 6A RBU
товар відсутній
RBU806M RBU806M Rectron USA rbu801m-rbu807m.pdf Description: BRIDGE RECT GLASS 800V 8A RBU
Packaging: Tube
Package / Case: 4-SIP, RBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
товар відсутній
RBU807M RBU807M Rectron USA rbu801m-rbu807m.pdf Description: BRIDGE RECT GLASS 1000V 8A RBU
товар відсутній
RC204 RC204 Rectron USA rc201-rc207.pdf Description: BRIDGE RECT GLASS 400V 2A RC-2
Packaging: Bulk
Package / Case: 4-Circular, RC-2
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RC-2
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
товар відсутній
RC207 RC207 Rectron USA rc201-rc207.pdf Description: BRIDGE RECT GLASS 1000V 2A RC-2
Packaging: Bulk
Package / Case: 4-Circular, RC-2
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RC-2
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
товар відсутній
RL1N1200F RL1N1200F Rectron USA rl1n1000f-rl1n1800f.pdf Description: DIODE GEN PURP 1200V 1A A405
товар відсутній
RL1N1600F RL1N1600F Rectron USA rl1n1000f-rl1n1800f.pdf Description: DIODE GEN PURP 1600V 1A A405
товар відсутній
RL1N1800F Rectron USA rl1n1000f-rl1n1800f.pdf Description: DIODE GEN PURP 1800V 1A A405
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)
RL1N4001 RL1N4001 Rectron USA rl1n4001-rl1n4007.pdf Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4001G RL1N4001G Rectron USA rl1n4001g-rl1n4007g.pdf Description: DIODE GLASS 1A 50V A-405
товар відсутній
RL1N4002 RL1N4002 Rectron USA rl1n4001-rl1n4007.pdf Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4002G RL1N4002G Rectron USA rl1n4001g-rl1n4007g.pdf Description: DIODE GLASS 1A 100V A-405
товар відсутній
RL1N4003 RL1N4003 Rectron USA rl1n4001-rl1n4007.pdf Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4003G RL1N4003G Rectron USA rl1n4001g-rl1n4007g.pdf Description: DIODE GLASS 1A 200V A-405
товар відсутній
RL1N4004 RL1N4004 Rectron USA rl1n4001-rl1n4007.pdf Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4004G RL1N4004G Rectron USA rl1n4001g-rl1n4007g.pdf Description: DIODE GLASS 1A 400V A-405
товар відсутній
RL1N4005 RL1N4005 Rectron USA rl1n4001-rl1n4007.pdf Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4005G RL1N4005G Rectron USA rl1n4001g-rl1n4007g.pdf Description: DIODE GLASS 1A 600V A-405
товар відсутній
RL1N4006 RL1N4006 Rectron USA rl1n4001-rl1n4007.pdf Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4006G RL1N4006G Rectron USA rl1n4001g-rl1n4007g.pdf Description: DIODE GLASS 1A 800V A-405
товар відсутній
RL1N4007 RL1N4007 Rectron USA rl1n4001-rl1n4007.pdf Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4007G RL1N4007G Rectron USA rl1n4001g-rl1n4007g.pdf Description: DIODE GLASS 1A 1000V A-405
товар відсутній
RL255 RL255 Rectron USA rl251-rl257.pdf Description: DIODE GEN PURP 1000V 2.5A R-3
товар відсутній
RL257 RL257 Rectron USA rl251-rl257.pdf Description: DIODE GEN PURP 1000V 2.5A R-3
товар відсутній
RM002N30DF RM002N30DF Rectron USA Description: MOSFET N-CHANNEL 30V 85A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4345 pF @ 15 V
товар відсутній
RM052N100DF RM052N100DF Rectron USA Description: MOSFET N-CHANNEL 100V 70A 8DFN
товар відсутній
RM1002 RM1002 Rectron USA rm1002.pdf Description: MOSFET N-CHANNEL 100V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
товар відсутній
RM100N30DF RM100N30DF Rectron USA rm100n30df.pdf Description: MOSFET N-CHANNEL 30V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
товар відсутній
RM100N60T2 RM100N60T2 Rectron USA rm100n60t2.pdf Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
товар відсутній
RM100N60T7 RM100N60T7 Rectron USA rm100n60t7.pdf Description: MOSFET N-CHANNEL 60V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
товар відсутній
RM100N65DF RM100N65DF Rectron USA rm100n65df.pdf Description: MOSFET N-CHANNEL 65V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 25 V
товар відсутній
RM10N100LD Rectron USA Description: MOSFET N-CH 100V 10A TO252-2
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)
RM10N100S8 Rectron USA Description: MOSFET N-CHANNEL 100V 10A 8SOP
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)
RM10N30D2 RM10N30D2 Rectron USA rm10n30d2.pdf Description: MOSFET N-CH 30V 10A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
товар відсутній
RM10N40S8 RM10N40S8 Rectron USA Description: MOSFET 2 N-CHANNEL 40V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товар відсутній
RM110N150HD RM110N150HD Rectron USA rm110n150hd.pdf Description: MOSFET N-CH 150V 113A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 4362 pF @ 75 V
товар відсутній
RM110N82T2 RM110N82T2 Rectron USA Description: MOSFET N-CH 82V 110A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 82 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
товар відсутній
RM110N85T2 RM110N85T2 Rectron USA Description: MOSFET N-CH 85V 110A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 55A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 40 V
товар відсутній
RM115N65T2 RM115N65T2 Rectron USA Description: MOSFET N-CH 65V 115A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
товар відсутній
RM11N800T2 RM11N800T2 Rectron USA Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
товар відсутній
RM11N800TI RM11N800TI Rectron USA Description: MOSFET N-CHANNEL 800V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
товар відсутній
RM120N30DF RM120N30DF Rectron USA rm120n30df.pdf Description: MOSFET N-CHANNEL 30V 120A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 60A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 15 V
товар відсутній
RM120N30T2 RM120N30T2 Rectron USA Description: MOSFET N-CH 30V 120A TO220-3
товар відсутній
RM120N40T2 RM120N40T2 Rectron USA Description: MOSFET N-CH 40V 120A TO220-3
товар відсутній
RM120N60T2 RM120N60T2 Rectron USA Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
товар відсутній
RM120N85T2 RM120N85T2 Rectron USA rm120n85t2.pdf Description: MOSFET N-CH 85V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 60A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V
товар відсутній
RM12N100LD RM12N100LD Rectron USA Description: MOSFET N-CH 100V 12A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 10A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
товар відсутній
RM12N100S8 RM12N100S8 Rectron USA Description: MOSFET N-CHANNEL 100V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 50 V
товар відсутній
RM12N650IP RM12N650IP Rectron USA Description: MOSFET N-CH 650V 11.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
товар відсутній
RM12N650LD RM12N650LD Rectron USA Description: MOSFET N-CH 650V 11.5A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
товар відсутній
RM12N650T2 RM12N650T2 Rectron USA Description: MOSFET N-CH 650V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
товар відсутній
RM12N650TI RM12N650TI Rectron USA Description: MOSFET N-CH 650V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 32.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
товар відсутній
RM130N100HD RM130N100HD Rectron USA rm130n100hd.pdf Description: MOSFET N-CH 100V 130A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
товар відсутній
RM130N100T2 RM130N100T2 Rectron USA rm130n100t2.pdf Description: MOSFET N-CH 100V 130A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
товар відсутній
RM130N200HD RM130N200HD Rectron USA Description: MOSFET N-CH 200V 132A TO263-2
товар відсутній
RM130N200T2 RM130N200T2 Rectron USA Description: MOSFET N-CH 200V 132A TO220-3
товар відсутній
RM130N200T7 RM130N200T7 Rectron USA Description: MOSFET N-CHANNEL 200V 132A TO247
товар відсутній
RM135N100HD RM135N100HD Rectron USA Description: MOSFET N-CH 100V 135A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 50 V
товар відсутній
RM135N100T2 RM135N100T2 Rectron USA Description: MOSFET N-CH 100V 135A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 50 V
товар відсутній
RBU603M rbu601m-rbu607m.pdf
RBU603M
Виробник: Rectron USA
Description: BRIDGE RECT GLASS 200V 6A RBU
Packaging: Tube
Package / Case: 4-SIP, RBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RBU
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
товар відсутній
RBU607M rbu601m-rbu607m.pdf
RBU607M
Виробник: Rectron USA
Description: BRIDGE RECT GLASS 1000V 6A RBU
товар відсутній
RBU806M rbu801m-rbu807m.pdf
RBU806M
Виробник: Rectron USA
Description: BRIDGE RECT GLASS 800V 8A RBU
Packaging: Tube
Package / Case: 4-SIP, RBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 800 V
товар відсутній
RBU807M rbu801m-rbu807m.pdf
RBU807M
Виробник: Rectron USA
Description: BRIDGE RECT GLASS 1000V 8A RBU
товар відсутній
RC204 rc201-rc207.pdf
RC204
Виробник: Rectron USA
Description: BRIDGE RECT GLASS 400V 2A RC-2
Packaging: Bulk
Package / Case: 4-Circular, RC-2
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RC-2
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 400 V
товар відсутній
RC207 rc201-rc207.pdf
RC207
Виробник: Rectron USA
Description: BRIDGE RECT GLASS 1000V 2A RC-2
Packaging: Bulk
Package / Case: 4-Circular, RC-2
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: RC-2
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 1000 V
товар відсутній
RL1N1200F rl1n1000f-rl1n1800f.pdf
RL1N1200F
Виробник: Rectron USA
Description: DIODE GEN PURP 1200V 1A A405
товар відсутній
RL1N1600F rl1n1000f-rl1n1800f.pdf
RL1N1600F
Виробник: Rectron USA
Description: DIODE GEN PURP 1600V 1A A405
товар відсутній
RL1N1800F rl1n1000f-rl1n1800f.pdf
Виробник: Rectron USA
Description: DIODE GEN PURP 1800V 1A A405
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)
RL1N4001 rl1n4001-rl1n4007.pdf
RL1N4001
Виробник: Rectron USA
Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4001G rl1n4001g-rl1n4007g.pdf
RL1N4001G
Виробник: Rectron USA
Description: DIODE GLASS 1A 50V A-405
товар відсутній
RL1N4002 rl1n4001-rl1n4007.pdf
RL1N4002
Виробник: Rectron USA
Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4002G rl1n4001g-rl1n4007g.pdf
RL1N4002G
Виробник: Rectron USA
Description: DIODE GLASS 1A 100V A-405
товар відсутній
RL1N4003 rl1n4001-rl1n4007.pdf
RL1N4003
Виробник: Rectron USA
Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4003G rl1n4001g-rl1n4007g.pdf
RL1N4003G
Виробник: Rectron USA
Description: DIODE GLASS 1A 200V A-405
товар відсутній
RL1N4004 rl1n4001-rl1n4007.pdf
RL1N4004
Виробник: Rectron USA
Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4004G rl1n4001g-rl1n4007g.pdf
RL1N4004G
Виробник: Rectron USA
Description: DIODE GLASS 1A 400V A-405
товар відсутній
RL1N4005 rl1n4001-rl1n4007.pdf
RL1N4005
Виробник: Rectron USA
Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4005G rl1n4001g-rl1n4007g.pdf
RL1N4005G
Виробник: Rectron USA
Description: DIODE GLASS 1A 600V A-405
товар відсутній
RL1N4006 rl1n4001-rl1n4007.pdf
RL1N4006
Виробник: Rectron USA
Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4006G rl1n4001g-rl1n4007g.pdf
RL1N4006G
Виробник: Rectron USA
Description: DIODE GLASS 1A 800V A-405
товар відсутній
RL1N4007 rl1n4001-rl1n4007.pdf
RL1N4007
Виробник: Rectron USA
Description: DIODE GEN PURP 1000V 1A A-405
товар відсутній
RL1N4007G rl1n4001g-rl1n4007g.pdf
RL1N4007G
Виробник: Rectron USA
Description: DIODE GLASS 1A 1000V A-405
товар відсутній
RL255 rl251-rl257.pdf
RL255
Виробник: Rectron USA
Description: DIODE GEN PURP 1000V 2.5A R-3
товар відсутній
RL257 rl251-rl257.pdf
RL257
Виробник: Rectron USA
Description: DIODE GEN PURP 1000V 2.5A R-3
товар відсутній
RM002N30DF
RM002N30DF
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 30V 85A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4345 pF @ 15 V
товар відсутній
RM052N100DF
RM052N100DF
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 100V 70A 8DFN
товар відсутній
RM1002 rm1002.pdf
RM1002
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 100V 2A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 1A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 50 V
товар відсутній
RM100N30DF rm100n30df.pdf
RM100N30DF
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 30V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 15 V
товар відсутній
RM100N60T2 rm100n60t2.pdf
RM100N60T2
Виробник: Rectron USA
Description: MOSFET N-CH 60V 100A TO220-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
товар відсутній
RM100N60T7 rm100n60t7.pdf
RM100N60T7
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 60V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 30 V
товар відсутній
RM100N65DF rm100n65df.pdf
RM100N65DF
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 65V 100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 25 V
товар відсутній
RM10N100LD
Виробник: Rectron USA
Description: MOSFET N-CH 100V 10A TO252-2
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)
RM10N100S8
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 100V 10A 8SOP
на замовлення 1000000 шт:
термін постачання 21-31 дні (днів)
RM10N30D2 rm10n30d2.pdf
RM10N30D2
Виробник: Rectron USA
Description: MOSFET N-CH 30V 10A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
товар відсутній
RM10N40S8
RM10N40S8
Виробник: Rectron USA
Description: MOSFET 2 N-CHANNEL 40V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
товар відсутній
RM110N150HD rm110n150hd.pdf
RM110N150HD
Виробник: Rectron USA
Description: MOSFET N-CH 150V 113A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 113A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 273W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Input Capacitance (Ciss) (Max) @ Vds: 4362 pF @ 75 V
товар відсутній
RM110N82T2
RM110N82T2
Виробник: Rectron USA
Description: MOSFET N-CH 82V 110A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 82 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 40 V
товар відсутній
RM110N85T2
RM110N85T2
Виробник: Rectron USA
Description: MOSFET N-CH 85V 110A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 55A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 40 V
товар відсутній
RM115N65T2
RM115N65T2
Виробник: Rectron USA
Description: MOSFET N-CH 65V 115A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 15A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -12V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
товар відсутній
RM11N800T2
RM11N800T2
Виробник: Rectron USA
Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
товар відсутній
RM11N800TI
RM11N800TI
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 800V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Power Dissipation (Max): 33.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 50 V
товар відсутній
RM120N30DF rm120n30df.pdf
RM120N30DF
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 30V 120A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 60A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 15 V
товар відсутній
RM120N30T2
RM120N30T2
Виробник: Rectron USA
Description: MOSFET N-CH 30V 120A TO220-3
товар відсутній
RM120N40T2
RM120N40T2
Виробник: Rectron USA
Description: MOSFET N-CH 40V 120A TO220-3
товар відсутній
RM120N60T2
RM120N60T2
Виробник: Rectron USA
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 30 V
товар відсутній
RM120N85T2 rm120n85t2.pdf
RM120N85T2
Виробник: Rectron USA
Description: MOSFET N-CH 85V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 60A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V
товар відсутній
RM12N100LD
RM12N100LD
Виробник: Rectron USA
Description: MOSFET N-CH 100V 12A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 112mOhm @ 10A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 15 V
товар відсутній
RM12N100S8
RM12N100S8
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 100V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 50 V
товар відсутній
RM12N650IP
RM12N650IP
Виробник: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
товар відсутній
RM12N650LD
RM12N650LD
Виробник: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
товар відсутній
RM12N650T2
RM12N650T2
Виробник: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
товар відсутній
RM12N650TI
RM12N650TI
Виробник: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Power Dissipation (Max): 32.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 50 V
товар відсутній
RM130N100HD rm130n100hd.pdf
RM130N100HD
Виробник: Rectron USA
Description: MOSFET N-CH 100V 130A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
товар відсутній
RM130N100T2 rm130n100t2.pdf
RM130N100T2
Виробник: Rectron USA
Description: MOSFET N-CH 100V 130A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
товар відсутній
RM130N200HD
RM130N200HD
Виробник: Rectron USA
Description: MOSFET N-CH 200V 132A TO263-2
товар відсутній
RM130N200T2
RM130N200T2
Виробник: Rectron USA
Description: MOSFET N-CH 200V 132A TO220-3
товар відсутній
RM130N200T7
RM130N200T7
Виробник: Rectron USA
Description: MOSFET N-CHANNEL 200V 132A TO247
товар відсутній
RM135N100HD
RM135N100HD
Виробник: Rectron USA
Description: MOSFET N-CH 100V 135A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 50 V
товар відсутній
RM135N100T2
RM135N100T2
Виробник: Rectron USA
Description: MOSFET N-CH 100V 135A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 50 V
товар відсутній
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