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NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
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NP60N04VUK-E1-AY NP60N04VUK-E1-AY Renesas Electronics Corporation np60n04vukmos-field-effect-transistor Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4171 шт:
термін постачання 21-31 дні (днів)
2+175.77 грн
10+108.61 грн
100+74.08 грн
500+55.63 грн
1000+51.16 грн
Мінімальне замовлення: 2
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RAJ2800024H11HPF#GB0 RAJ2800024H11HPF#GB0 Renesas Electronics Corporation raj2800024h11hpf-datasheet?r=501086 Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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RAJ2800024H11HPF#GB0 RAJ2800024H11HPF#GB0 Renesas Electronics Corporation raj2800024h11hpf-datasheet?r=501086 Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 859 шт:
термін постачання 21-31 дні (днів)
1+427.36 грн
10+313.88 грн
25+289.53 грн
100+246.54 грн
250+234.55 грн
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UPD166031AT1U-E1-AY UPD166031AT1U-E1-AY Renesas Electronics Corporation upd166031at1u-data-sheet Description: POWER TRS MP-3ZK HIGHT SIDE IPD(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
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UPD166032T1U-E1-AY UPD166032T1U-E1-AY Renesas Electronics Corporation upd166032t1u-data-sheet?r=501201 Description: POWER TRANSISTOR IPD MP-3ZK HIGH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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UPD166033T1U-E1-AY UPD166033T1U-E1-AY Renesas Electronics Corporation upd166033t1u-data-sheet Description: POWER DEVICE E IPD MP-3ZK HIGHT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+106.75 грн
Мінімальне замовлення: 2500
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UPD166034T1U-E1-AY UPD166034T1U-E1-AY Renesas Electronics Corporation upd166034t1u-data-sheet?r=501211 Description: POWER TRS2 IPD MP-3ZK HIGH SIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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PS9531L2-AX PS9531L2-AX Renesas Electronics Corporation ps9531ps9531l1ps9531l2ps9531l3-datasheet Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+293.81 грн
50+199.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PS9531L3-AX PS9531L3-AX Renesas Electronics Corporation ps9531ps9531l1ps9531l2ps9531l3-datasheet Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
2+290.37 грн
50+197.84 грн
100+162.04 грн
500+128.20 грн
Мінімальне замовлення: 2
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RBN25H125S1FPQ-A0#CB0 RBN25H125S1FPQ-A0#CB0 Renesas Electronics Corporation rbn25h125s1fpq-a0-datasheet-0 Description: IGBT TRENCH 1250V 50A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
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RBN40H125S1FPQ-A0#CB0 RBN40H125S1FPQ-A0#CB0 Renesas Electronics Corporation rbn40h125s1fpq-a0-datasheet-0 Description: IGBT TRENCH 1250V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/124ns
Switching Energy: 2mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 319 W
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+690.16 грн
10+600.71 грн
25+572.76 грн
100+466.72 грн
250+445.74 грн
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RBN40H65T1FPQ-A0#CB0 RBN40H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn40h65t1fpq-a0-datasheet-0 Description: IGBT TRENCH 650V 80A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/96ns
Switching Energy: 620µJ (on), 520µJ (off)
Test Condition: 400V, 40A, 16Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 185 W
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RBN50H65T1FPQ-A0#CB0 RBN50H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn50h65t1fpq-a0-datasheet-0 Description: IGBT TRENCH 650V 100A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/93ns
Switching Energy: 830µJ (on), 670µJ (off)
Test Condition: 400V, 50A, 16Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
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RBN75H65T1FPQ-A0#CB0 RBN75H65T1FPQ-A0#CB0 Renesas Electronics Corporation rbn75h65t1fpq-a0-datasheet Description: IGBT TRENCH 650V 150A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/113ns
Switching Energy: 1.6mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 16Ohm, 15V
Gate Charge: 54 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 312 W
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RJP65T43DPM-00#T1 RJP65T43DPM-00#T1 Renesas Electronics Corporation rjp65t43dpm-datasheet Description: IGBT TRENCH 650V 40A TO-3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/107ns
Switching Energy: 170µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 68.8 W
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RJP65T54DPM-A0#T2 RJP65T54DPM-A0#T2 Renesas Electronics Corporation rjp65t54dpm-a0-data-sheet-650v-30a-igbt-application-partial-switching-circuit Description: IGBT TRENCH 650V 60A TO-3PFP
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Supplier Device Package: TO-3PFP
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/120ns
Switching Energy: 330µJ (on), 760µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 63.5 W
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
1+830.60 грн
25+488.60 грн
100+414.65 грн
500+357.11 грн
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RMLV0414EGSB-4S2#AA1 RMLV0414EGSB-4S2#AA1 Renesas Electronics Corporation rmlv0414e-series-datasheet-rev300 Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
2+305.87 грн
10+274.55 грн
25+266.40 грн
50+244.23 грн
135+235.95 грн
270+230.21 грн
540+220.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RMLV0816BGSD-4S2#AA1 RMLV0816BGSD-4S2#AA1 Renesas Electronics Corporation rmlv0816bgsd-4s2-datasheet Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tray
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
1+498.02 грн
10+437.59 грн
25+429.19 грн
40+399.87 грн
80+358.81 грн
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RMWV6416AGSA-5S2#AA0 RMWV6416AGSA-5S2#AA0 Renesas Electronics Corporation rmwv6416a-series-datasheet Description: IC SRAM 64MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+5576.39 грн
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8T73S1802NLGI/W 8T73S1802NLGI/W Renesas Electronics Corporation 8t73s1802-datasheet Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
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8T73S1802NLGI/W 8T73S1802NLGI/W Renesas Electronics Corporation 8t73s1802-datasheet Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
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NP100P04PLG-E1-AY NP100P04PLG-E1-AY Renesas Electronics Corporation np100p04plg-datasheet Description: MOSFET P-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+250.31 грн
1600+206.39 грн
Мінімальне замовлення: 800
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NP100P04PLG-E1-AY NP100P04PLG-E1-AY Renesas Electronics Corporation np100p04plg-datasheet Description: MOSFET P-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+414.44 грн
10+335.20 грн
100+271.16 грн
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NP100P06PDG-E1-AY NP100P06PDG-E1-AY Renesas Electronics Corporation np100p06pdg-datasheet Description: MOSFET P-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+180.09 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP100P06PDG-E1-AY NP100P06PDG-E1-AY Renesas Electronics Corporation np100p06pdg-datasheet Description: MOSFET P-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1946 шт:
термін постачання 21-31 дні (днів)
1+458.38 грн
10+295.96 грн
100+213.59 грн
В кошику  од. на суму  грн.
NP109N055PUK-E1-AY NP109N055PUK-E1-AY Renesas Electronics Corporation np109n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+136.00 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP109N055PUK-E1-AY NP109N055PUK-E1-AY Renesas Electronics Corporation np109n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
1+370.50 грн
10+235.72 грн
100+166.90 грн
В кошику  од. на суму  грн.
NP110N04PUK-E1-AY NP110N04PUK-E1-AY Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
NP110N04PUK-E1-AY NP110N04PUK-E1-AY Renesas Electronics Corporation np110n04pukmos-field-effect-transistor Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
на замовлення 1551 шт:
термін постачання 21-31 дні (днів)
1+435.12 грн
10+294.05 грн
100+219.92 грн
В кошику  од. на суму  грн.
NP110N055PUK-E1-AY NP110N055PUK-E1-AY Renesas Electronics Corporation np110n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NP110N055PUK-E1-AY NP110N055PUK-E1-AY Renesas Electronics Corporation np110n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 799 шт:
термін постачання 21-31 дні (днів)
1+404.10 грн
10+283.01 грн
100+202.94 грн
В кошику  од. на суму  грн.
NP15P04SLG-E1-AY NP15P04SLG-E1-AY Renesas Electronics Corporation np15p04slg-datasheet Description: MOSFET P-CH 40V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+45.18 грн
5000+40.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP15P04SLG-E1-AY NP15P04SLG-E1-AY Renesas Electronics Corporation np15p04slg-datasheet Description: MOSFET P-CH 40V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8309 шт:
термін постачання 21-31 дні (днів)
3+157.68 грн
10+97.32 грн
100+65.93 грн
500+49.27 грн
1000+46.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NP15P06SLG-E1-AY NP15P06SLG-E1-AY Renesas Electronics Corporation np15p06slg-datasheet Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+45.18 грн
5000+40.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP15P06SLG-E1-AY NP15P06SLG-E1-AY Renesas Electronics Corporation np15p06slg-datasheet Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6916 шт:
термін постачання 21-31 дні (днів)
3+157.68 грн
10+97.32 грн
100+65.93 грн
500+49.27 грн
1000+46.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NP179N055TUK-E1-AY NP179N055TUK-E1-AY Renesas Electronics Corporation np179n055tuk-data-sheet?r=499346 Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tray
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+632.43 грн
10+522.05 грн
25+486.21 грн
80+408.25 грн
230+384.25 грн
800+360.23 грн
1600+318.89 грн
В кошику  од. на суму  грн.
NP180N04TUK-E1-AY NP180N04TUK-E1-AY Renesas Electronics Corporation np180n04tukmos-field-effect-transistor Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+202.79 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP180N04TUK-E1-AY NP180N04TUK-E1-AY Renesas Electronics Corporation np180n04tukmos-field-effect-transistor Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
1+516.97 грн
10+353.04 грн
100+256.50 грн
В кошику  од. на суму  грн.
NP180N055TUK-E1-AY NP180N055TUK-E1-AY Renesas Electronics Corporation np180n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+186.34 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP180N055TUK-E1-AY NP180N055TUK-E1-AY Renesas Electronics Corporation np180n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
на замовлення 2182 шт:
термін постачання 21-31 дні (днів)
1+481.64 грн
10+310.39 грн
100+223.37 грн
В кошику  од. на суму  грн.
NP35N055YUK-E1-AY NP35N055YUK-E1-AY Renesas Electronics Corporation np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+160.26 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NP35N055YUK-E1-AY NP35N055YUK-E1-AY Renesas Electronics Corporation np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+55.26 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP36P04KDG-E1-AY NP36P04KDG-E1-AY Renesas Electronics Corporation D18686EJ3V0DS00.pdf Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NP36P04KDG-E1-AY NP36P04KDG-E1-AY Renesas Electronics Corporation D18686EJ3V0DS00.pdf Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NP36P04SDG-E1-AY NP36P04SDG-E1-AY Renesas Electronics Corporation np36p04sdg-datasheet Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+55.27 грн
5000+51.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP36P04SDG-E1-AY NP36P04SDG-E1-AY Renesas Electronics Corporation np36p04sdg-datasheet Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8850 шт:
термін постачання 21-31 дні (днів)
2+187.83 грн
10+116.08 грн
100+79.41 грн
500+59.80 грн
1000+59.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP36P06KDG-E1-AY NP36P06KDG-E1-AY Renesas Electronics Corporation D18687EJ3V0DS00.pdf Description: MOSFET P-CH 60V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+70.94 грн
1600+67.70 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP36P06KDG-E1-AY NP36P06KDG-E1-AY Renesas Electronics Corporation D18687EJ3V0DS00.pdf Description: MOSFET P-CH 60V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2578 шт:
термін постачання 21-31 дні (днів)
2+220.57 грн
10+137.81 грн
100+95.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP36P06SLG-E1-AY NP36P06SLG-E1-AY Renesas Electronics Corporation D18008EJ5V0DS00.pdf Description: MOSFET P-CH 60V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+54.35 грн
5000+50.61 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP36P06SLG-E1-AY NP36P06SLG-E1-AY Renesas Electronics Corporation D18008EJ5V0DS00.pdf Description: MOSFET P-CH 60V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7308 шт:
термін постачання 21-31 дні (днів)
2+184.39 грн
10+114.33 грн
100+78.20 грн
500+58.85 грн
1000+58.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50N04YUK-E1-AY NP50N04YUK-E1-AY Renesas Electronics Corporation np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756 Description: LOW VOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+48.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP50N04YUK-E1-AY NP50N04YUK-E1-AY Renesas Electronics Corporation np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756 Description: LOW VOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4894 шт:
термін постачання 21-31 дні (днів)
2+178.35 грн
10+110.35 грн
100+75.31 грн
500+56.59 грн
1000+55.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50P04KDG-E1-AY NP50P04KDG-E1-AY Renesas Electronics Corporation D18688EJ3V0DS00.pdf Description: MOSFET P-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+102.61 грн
1600+94.47 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP50P04KDG-E1-AY NP50P04KDG-E1-AY Renesas Electronics Corporation D18688EJ3V0DS00.pdf Description: MOSFET P-CH 40V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2877 шт:
термін постачання 21-31 дні (днів)
2+254.18 грн
10+185.11 грн
100+129.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50P04SDG-E1-AY NP50P04SDG-E1-AY Renesas Electronics Corporation D19072EJ2V0DS00.pdf Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+72.16 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP50P04SDG-E1-AY NP50P04SDG-E1-AY Renesas Electronics Corporation D19072EJ2V0DS00.pdf Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8683 шт:
термін постачання 21-31 дні (днів)
2+234.36 грн
10+93.42 грн
100+85.78 грн
500+79.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50P06KDG-E1-AY NP50P06KDG-E1-AY Renesas Electronics Corporation np50p06kdg-datasheet?r=499781 Description: MOSFET P-CH 60V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
800+87.53 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP50P06KDG-E1-AY NP50P06KDG-E1-AY Renesas Electronics Corporation np50p06kdg-datasheet?r=499781 Description: MOSFET P-CH 60V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4602 шт:
термін постачання 21-31 дні (днів)
2+267.96 грн
10+168.85 грн
100+117.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50P06SDG-E1-AY NP50P06SDG-E1-AY Renesas Electronics Corporation np50p06sdg-data-sheet Description: MOSFET P-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
2500+69.67 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NP60N04VUK-E1-AY np60n04vukmos-field-effect-transistor
NP60N04VUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 60A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.85mOhm @ 30A, 10V
Power Dissipation (Max): 1.2W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+175.77 грн
10+108.61 грн
100+74.08 грн
500+55.63 грн
1000+51.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RAJ2800024H11HPF#GB0 raj2800024h11hpf-datasheet?r=501086
RAJ2800024H11HPF#GB0
Виробник: Renesas Electronics Corporation
Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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RAJ2800024H11HPF#GB0 raj2800024h11hpf-datasheet?r=501086
RAJ2800024H11HPF#GB0
Виробник: Renesas Electronics Corporation
Description: POWER TRS2 HIGHT SIDE IPD(MCP)
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Current - Supply: 2.5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 859 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+427.36 грн
10+313.88 грн
25+289.53 грн
100+246.54 грн
250+234.55 грн
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UPD166031AT1U-E1-AY upd166031at1u-data-sheet
UPD166031AT1U-E1-AY
Виробник: Renesas Electronics Corporation
Description: POWER TRS MP-3ZK HIGHT SIDE IPD(
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
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UPD166032T1U-E1-AY upd166032t1u-data-sheet?r=501201
UPD166032T1U-E1-AY
Виробник: Renesas Electronics Corporation
Description: POWER TRANSISTOR IPD MP-3ZK HIGH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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UPD166033T1U-E1-AY upd166033t1u-data-sheet
UPD166033T1U-E1-AY
Виробник: Renesas Electronics Corporation
Description: POWER DEVICE E IPD MP-3ZK HIGHT
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+106.75 грн
Мінімальне замовлення: 2500
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UPD166034T1U-E1-AY upd166034t1u-data-sheet?r=501211
UPD166034T1U-E1-AY
Виробник: Renesas Electronics Corporation
Description: POWER TRS2 IPD MP-3ZK HIGH SIDE
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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PS9531L2-AX ps9531ps9531l1ps9531l2ps9531l3-datasheet
PS9531L2-AX
Виробник: Renesas Electronics Corporation
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+293.81 грн
50+199.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PS9531L3-AX ps9531ps9531l1ps9531l2ps9531l3-datasheet
PS9531L3-AX
Виробник: Renesas Electronics Corporation
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.56V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, SEMKO, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 40ns, 40ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 175ns, 175ns
Pulse Width Distortion (Max): 75ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 982 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+290.37 грн
50+197.84 грн
100+162.04 грн
500+128.20 грн
Мінімальне замовлення: 2
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RBN25H125S1FPQ-A0#CB0 rbn25h125s1fpq-a0-datasheet-0
RBN25H125S1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 1250V 50A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 102 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/109ns
Switching Energy: 1.1mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 223 W
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RBN40H125S1FPQ-A0#CB0 rbn40h125s1fpq-a0-datasheet-0
RBN40H125S1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 1250V 80A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 156 ns
Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 25ns/124ns
Switching Energy: 2mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Power - Max: 319 W
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+690.16 грн
10+600.71 грн
25+572.76 грн
100+466.72 грн
250+445.74 грн
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RBN40H65T1FPQ-A0#CB0 rbn40h65t1fpq-a0-datasheet-0
RBN40H65T1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 80A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 22ns/96ns
Switching Energy: 620µJ (on), 520µJ (off)
Test Condition: 400V, 40A, 16Ohm, 15V
Gate Charge: 28 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 185 W
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RBN50H65T1FPQ-A0#CB0 rbn50h65t1fpq-a0-datasheet-0
RBN50H65T1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 100A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/93ns
Switching Energy: 830µJ (on), 670µJ (off)
Test Condition: 400V, 50A, 16Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 250 W
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RBN75H65T1FPQ-A0#CB0 rbn75h65t1fpq-a0-datasheet
RBN75H65T1FPQ-A0#CB0
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 150A TO247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247A
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/113ns
Switching Energy: 1.6mJ (on), 1mJ (off)
Test Condition: 400V, 75A, 16Ohm, 15V
Gate Charge: 54 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 312 W
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RJP65T43DPM-00#T1 rjp65t43dpm-datasheet
RJP65T43DPM-00#T1
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 40A TO-3PFM
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: TO-3PFM
IGBT Type: Trench
Td (on/off) @ 25°C: 30ns/107ns
Switching Energy: 170µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 68.8 W
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RJP65T54DPM-A0#T2 rjp65t54dpm-a0-data-sheet-650v-30a-igbt-application-partial-switching-circuit
RJP65T54DPM-A0#T2
Виробник: Renesas Electronics Corporation
Description: IGBT TRENCH 650V 60A TO-3PFP
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
Supplier Device Package: TO-3PFP
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/120ns
Switching Energy: 330µJ (on), 760µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 72 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 63.5 W
на замовлення 683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+830.60 грн
25+488.60 грн
100+414.65 грн
500+357.11 грн
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RMLV0414EGSB-4S2#AA1 rmlv0414e-series-datasheet-rev300
RMLV0414EGSB-4S2#AA1
Виробник: Renesas Electronics Corporation
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+305.87 грн
10+274.55 грн
25+266.40 грн
50+244.23 грн
135+235.95 грн
270+230.21 грн
540+220.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RMLV0816BGSD-4S2#AA1 rmlv0816bgsd-4s2-datasheet
RMLV0816BGSD-4S2#AA1
Виробник: Renesas Electronics Corporation
Description: IC SRAM 8MBIT PARALLEL 52TSOP II
Packaging: Tray
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 52-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8, 512K x 16
DigiKey Programmable: Not Verified
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+498.02 грн
10+437.59 грн
25+429.19 грн
40+399.87 грн
80+358.81 грн
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RMWV6416AGSA-5S2#AA0 rmwv6416a-series-datasheet
RMWV6416AGSA-5S2#AA0
Виробник: Renesas Electronics Corporation
Description: IC SRAM 64MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Part Status: Active
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5576.39 грн
В кошику  од. на суму  грн.
8T73S1802NLGI/W 8t73s1802-datasheet
8T73S1802NLGI/W
Виробник: Renesas Electronics Corporation
Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
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8T73S1802NLGI/W 8t73s1802-datasheet
8T73S1802NLGI/W
Виробник: Renesas Electronics Corporation
Description: IC CLK BUFFER 1:2 1GHZ 16VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVPECL
Type: Fanout Buffer (Distribution), Divider
Input: CML, LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: Yes/Yes
Supplier Device Package: 16-VFQFPN (3x3)
Part Status: Active
Frequency - Max: 1 GHz
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NP100P04PLG-E1-AY np100p04plg-datasheet
NP100P04PLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+250.31 грн
1600+206.39 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP100P04PLG-E1-AY np100p04plg-datasheet
NP100P04PLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 10 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+414.44 грн
10+335.20 грн
100+271.16 грн
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NP100P06PDG-E1-AY np100p06pdg-datasheet
NP100P06PDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+180.09 грн
Мінімальне замовлення: 800
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NP100P06PDG-E1-AY np100p06pdg-datasheet
NP100P06PDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1946 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+458.38 грн
10+295.96 грн
100+213.59 грн
В кошику  од. на суму  грн.
NP109N055PUK-E1-AY np109n055pukmos-field-effect-transistor
NP109N055PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+136.00 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP109N055PUK-E1-AY np109n055pukmos-field-effect-transistor
NP109N055PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+370.50 грн
10+235.72 грн
100+166.90 грн
В кошику  од. на суму  грн.
NP110N04PUK-E1-AY np110n04pukmos-field-effect-transistor
NP110N04PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
NP110N04PUK-E1-AY np110n04pukmos-field-effect-transistor
NP110N04PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 110A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
на замовлення 1551 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+435.12 грн
10+294.05 грн
100+219.92 грн
В кошику  од. на суму  грн.
NP110N055PUK-E1-AY np110n055pukmos-field-effect-transistor
NP110N055PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
NP110N055PUK-E1-AY np110n055pukmos-field-effect-transistor
NP110N055PUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 110A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 55A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 799 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+404.10 грн
10+283.01 грн
100+202.94 грн
В кошику  од. на суму  грн.
NP15P04SLG-E1-AY np15p04slg-datasheet
NP15P04SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+45.18 грн
5000+40.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP15P04SLG-E1-AY np15p04slg-datasheet
NP15P04SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8309 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.68 грн
10+97.32 грн
100+65.93 грн
500+49.27 грн
1000+46.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NP15P06SLG-E1-AY np15p06slg-datasheet
NP15P06SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 15A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+45.18 грн
5000+40.85 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP15P06SLG-E1-AY np15p06slg-datasheet
NP15P06SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 15A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6916 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.68 грн
10+97.32 грн
100+65.93 грн
500+49.27 грн
1000+46.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NP179N055TUK-E1-AY np179n055tuk-data-sheet?r=499346
NP179N055TUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: P-TRS2 AUTOMOTIVE MOS
Packaging: Tray
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+632.43 грн
10+522.05 грн
25+486.21 грн
80+408.25 грн
230+384.25 грн
800+360.23 грн
1600+318.89 грн
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NP180N04TUK-E1-AY np180n04tukmos-field-effect-transistor
NP180N04TUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+202.79 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP180N04TUK-E1-AY np180n04tukmos-field-effect-transistor
NP180N04TUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+516.97 грн
10+353.04 грн
100+256.50 грн
В кошику  од. на суму  грн.
NP180N055TUK-E1-AY np180n055tukmos-field-effect-transistor
NP180N055TUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+186.34 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP180N055TUK-E1-AY np180n055tukmos-field-effect-transistor
NP180N055TUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
на замовлення 2182 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+481.64 грн
10+310.39 грн
100+223.37 грн
В кошику  од. на суму  грн.
NP35N055YUK-E1-AY np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive
NP35N055YUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.26 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
NP35N055YUK-E1-AY np35n055yuk55-v-35-n-channel-power-mos-fetapplication-automotive
NP35N055YUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+55.26 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP36P04KDG-E1-AY D18686EJ3V0DS00.pdf
NP36P04KDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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NP36P04KDG-E1-AY D18686EJ3V0DS00.pdf
NP36P04KDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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NP36P04SDG-E1-AY np36p04sdg-datasheet
NP36P04SDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+55.27 грн
5000+51.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP36P04SDG-E1-AY np36p04sdg-datasheet
NP36P04SDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.83 грн
10+116.08 грн
100+79.41 грн
500+59.80 грн
1000+59.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP36P06KDG-E1-AY D18687EJ3V0DS00.pdf
NP36P06KDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+70.94 грн
1600+67.70 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP36P06KDG-E1-AY D18687EJ3V0DS00.pdf
NP36P06KDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 29.5mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2578 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+220.57 грн
10+137.81 грн
100+95.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP36P06SLG-E1-AY D18008EJ5V0DS00.pdf
NP36P06SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+54.35 грн
5000+50.61 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP36P06SLG-E1-AY D18008EJ5V0DS00.pdf
NP36P06SLG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7308 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.39 грн
10+114.33 грн
100+78.20 грн
500+58.85 грн
1000+58.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50N04YUK-E1-AY np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756
NP50N04YUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: LOW VOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+48.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP50N04YUK-E1-AY np50n04yuk40-v-50-n-channel-power-mos-fetapplication-automotive?r=499756
NP50N04YUK-E1-AY
Виробник: Renesas Electronics Corporation
Description: LOW VOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4894 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+178.35 грн
10+110.35 грн
100+75.31 грн
500+56.59 грн
1000+55.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50P04KDG-E1-AY D18688EJ3V0DS00.pdf
NP50P04KDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+102.61 грн
1600+94.47 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP50P04KDG-E1-AY D18688EJ3V0DS00.pdf
NP50P04KDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2877 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+254.18 грн
10+185.11 грн
100+129.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50P04SDG-E1-AY D19072EJ2V0DS00.pdf
NP50P04SDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+72.16 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
NP50P04SDG-E1-AY D19072EJ2V0DS00.pdf
NP50P04SDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8683 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.36 грн
10+93.42 грн
100+85.78 грн
500+79.81 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50P06KDG-E1-AY np50p06kdg-datasheet?r=499781
NP50P06KDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+87.53 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
NP50P06KDG-E1-AY np50p06kdg-datasheet?r=499781
NP50P06KDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4602 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+267.96 грн
10+168.85 грн
100+117.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
NP50P06SDG-E1-AY np50p06sdg-data-sheet
NP50P06SDG-E1-AY
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+69.67 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
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