Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103508) > Сторінка 1725 з 1726
| Фото | Назва | Виробник | Інформація |
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Ціна |
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DTC143XCAHZGT116 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Current gain: 30 |
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| SCS220AE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.63V Max. load current: 91A Max. forward impulse current: 0.3kA Leakage current: 0.2mA Power dissipation: 160W Kind of package: tube |
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QS5U12TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Gate-source voltage: ±12V Drain current: 2A Gate charge: 2.8nC On-state resistance: 154mΩ Power dissipation: 0.9W Pulsed drain current: 8A Case: TSOT25 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET + Schottky |
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QS5U17TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Gate-source voltage: ±12V Drain current: 2A Gate charge: 2.8nC On-state resistance: 154mΩ Power dissipation: 1.25W Pulsed drain current: 8A Case: TSOT25 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET + Schottky |
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QS5U16TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Gate-source voltage: ±12V Drain current: 0.5A Gate charge: 2.8nC On-state resistance: 154mΩ Power dissipation: 1.25W Pulsed drain current: 2A Case: TSOT25 Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET + Schottky |
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QS5K2TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Gate-source voltage: ±12V Drain current: 2A Gate charge: 2.8nC On-state resistance: 154mΩ Power dissipation: 1.25W Pulsed drain current: 8A Case: TSOT25 Semiconductor structure: common source Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET x2 |
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| BU4209F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1 Supply voltage: 700mV DC...7V DC Number of channels: 1 Manufacturer series: BU42 Case: SOP4 Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Mounting: SMD Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Threshold on-voltage: 0.9V Integrated circuit features: ±1% accuracy |
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| BU4209G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Supply voltage: 700mV DC...7V DC Number of channels: 1 Manufacturer series: BU42 Case: SSOP5 Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Mounting: SMD Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Threshold on-voltage: 0.9V Integrated circuit features: ±1% accuracy |
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| RGC80TSX8RGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.8kV; 40A; 267W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.8kV Collector current: 40A Power dissipation: 267W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 468nC Kind of package: tube Turn-on time: 0.12µs Turn-off time: 725ns Features of semiconductor devices: integrated anti-parallel diode |
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| BU4922F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Supply voltage: 700mV DC...7V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Case: SOP4 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.2V Manufacturer series: BU49 Integrated circuit features: ±1% accuracy |
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| BU4922FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Supply voltage: 700mV DC...7V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Case: VSOP5 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.2V Manufacturer series: BU49 Integrated circuit features: ±1% accuracy |
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| BU4922G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Supply voltage: 700mV DC...7V DC Operating temperature: -40...125°C Kind of package: reel; tape Kind of RESET output: CMOS Mounting: SMD Active logical level: low Case: SSOP5 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.2V Manufacturer series: BU49 Integrated circuit features: ±1% accuracy |
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| BD4845G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Kind of RESET output: open drain Active logical level: low Supply voltage: 950mV DC...10V DC Case: SSOP5 Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 4.5V Kind of package: reel; tape Number of channels: 1 Integrated circuit features: ±1% accuracy Manufacturer series: BD48 |
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| RS1E301GNTB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 39.8nC On-state resistance: 3.3mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 33W Drain current: 80A Pulsed drain current: 120A Kind of channel: enhancement Case: HSOP8 |
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| SCT3030ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Mounting: THT Drain-source voltage: 650V Technology: SiC |
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| SCT3030ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Mounting: THT Drain-source voltage: 650V Technology: SiC |
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| SCT3030ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Kind of package: tube Case: TO247-4 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Mounting: THT Drain-source voltage: 650V Technology: SiC |
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| SCT3030AW7TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W Kind of package: reel; tape Case: TO263-7 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 104nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 70A Pulsed drain current: 175A Power dissipation: 267W Mounting: SMD Drain-source voltage: 650V Technology: SiC |
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| SCT3030KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 131nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 72A Pulsed drain current: 180A Power dissipation: 339W Mounting: THT Drain-source voltage: 1.2kV Technology: SiC |
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| SCT3030KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W Kind of package: tube Case: TO247 Polarisation: unipolar Gate-source voltage: -4...22V Gate charge: 131nC On-state resistance: 39mΩ Type of transistor: N-MOSFET Kind of channel: enhancement Drain current: 72A Pulsed drain current: 180A Power dissipation: 339W Mounting: THT Drain-source voltage: 1.2kV Technology: SiC |
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| SMLA12ENTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; green; SMD; 140mcd; 3VDC; 1.6x0.55x1.15mm; 130°; 5mA; λd: 527nm LED version: angular LED colour: green Type of diode: LED Mounting: SMD Wavelength: 527nm Dimensions: 1.6x0.55x1.15mm LED current: 5mA Luminosity: 140mcd Operating voltage: 3V DC Viewing angle: 130° |
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| SMLA12WBN7W1 | ROHM SEMICONDUCTOR |
Category: SMD white LEDs Description: LED; white; SMD; 56mcd; 5mA; Front: flat; Variant: angular LED version: angular LED colour: white Front: flat Type of diode: LED Mounting: SMD Dimensions: 1.6x0.55x1.15mm LED current: 5mA Luminosity: 56mcd Chromatic coordinates: x: 0.3; y: 0.3 |
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DTC113ZKAT146 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ Kind of package: reel; tape Case: SC59; SOT346 Mounting: SMD Collector current: 0.1A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN |
на замовлення 1436 шт: термін постачання 14-30 дні (днів) |
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RRH050P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Power dissipation: 2W Case: SOP8 On-state resistance: 50mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhancement Version: ESD Pulsed drain current: -20A Gate-source voltage: ±20V Kind of package: reel; tape |
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SH8K26GZ0TB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; Idm: 12A; 2W; SOP8; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 6A Power dissipation: 2W Case: SOP8 On-state resistance: 50mΩ Mounting: SMD Gate charge: 2.9nC Kind of channel: enhancement Version: ESD Pulsed drain current: 12A Gate-source voltage: ±12V Kind of package: reel; tape |
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BCX19T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.2W Case: SOT23 Current gain: 40...600 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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| CSL1101WBAW1 | ROHM SEMICONDUCTOR |
Category: SMD white LEDs Description: LED; white; SMD; Case (mm): 1608; 155mcd; 120°; 5mA; 2.5÷3.4VDC Mounting: SMD Front: flat Type of diode: LED LED colour: white Dimensions: 1.6x0.8x1.24mm LED current: 5mA Luminosity: 155mcd Chromatic coordinates: x: 0.282; y: 0.249 Operating voltage: 2.5...3.4V DC Viewing angle: 120° Case - mm: 1608 |
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| CSL1102WBDW1 | ROHM SEMICONDUCTOR |
Category: SMD white LEDs Description: LED; white; SMD; Case (mm): 1608; 1000mcd; 120°; 20mA; 2.6÷3.8VDC Mounting: SMD Front: flat Type of diode: LED LED colour: white Dimensions: 1.6x0.8x1.24mm LED current: 20mA Luminosity: 1cd Chromatic coordinates: x: 0.284; y: 0.303 Operating voltage: 2.6...3.8V DC Viewing angle: 120° Case - mm: 1608 |
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| CSL1103WBCW1 | ROHM SEMICONDUCTOR |
Category: SMD white LEDs Description: LED; white; SMD; Case (mm): 1608; 1500mcd; 120°; 20mA; 2.6÷3.8VDC Mounting: SMD Front: flat Type of diode: LED LED colour: white Dimensions: 1.6x0.8x1.24mm LED current: 20mA Luminosity: 1500mcd Chromatic coordinates: x: 0.303; y: 0.294 Operating voltage: 2.6...3.8V DC Viewing angle: 120° Case - mm: 1608 |
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| BD46292G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Mounting: SMD Manufacturer series: BD46 Kind of RESET output: CMOS Integrated circuit features: Counter Timer Built-in Case: SSOP5 Active logical level: low Type of integrated circuit: supervisor circuit Kind of package: reel; tape Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 2.9V |
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| RD3G500GNTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252 On-state resistance: 6.3mΩ Case: DPAK; TO252 Gate-source voltage: ±20V Power dissipation: 35W Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 100A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 31nC |
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| SCS320AHGC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 400uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.71V Max. load current: 81A Max. forward impulse current: 0.45kA Leakage current: 0.4mA Power dissipation: 115W Kind of package: tube |
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| SCS320AMC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 41W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.71V Max. load current: 46A Max. forward impulse current: 0.45kA Leakage current: 0.4mA Power dissipation: 41W Kind of package: tube |
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| RD3S100CNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 190V Drain current: 10A Pulsed drain current: 40A Power dissipation: 85W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 52nC Kind of package: reel; tape Kind of channel: enhancement |
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| UDZLVTE-17110 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 110V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 110V Mounting: SMD Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode |
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| TLR342F-GE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.3MHz; Ch: 2; 1.8÷5.5VDC; SOP8; 4mV Type of integrated circuit: operational amplifier Bandwidth: 2.3MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: 1.8...5.5V DC Case: SOP8 Operating temperature: -40...85°C Slew rate: 1.2V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 4mV Kind of package: reel; tape Input bias current: 1pA |
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| LMR342FVJ-GE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2MHz; Ch: 4; 2.7÷5.5VDC; 4.5mV; Iio: 1pA Type of integrated circuit: operational amplifier Bandwidth: 2MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: 2.7...5.5V DC Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail output Input offset voltage: 4.5mV Kind of package: reel; tape Input bias current: 0.2nA Input offset current: 1pA |
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| R8001CND3FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 4A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Pulsed drain current: 4A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 8.7Ω Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
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| RB225T-60HZC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; ITO220AB,TO220FN Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Leakage current: 0.6mA Max. forward voltage: 0.63V Load current: 15A x2 Max. off-state voltage: 60V Max. forward impulse current: 100A Semiconductor structure: common cathode; double Case: ITO220AB; TO220FN |
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DTC123YCAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Current gain: 33 |
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RRH140P03GZETB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -14A Drain-source voltage: -30V Pulsed drain current: -56A Gate charge: 150nC On-state resistance: 7mΩ Power dissipation: 2W Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 |
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RRH140P03TB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD Mounting: SMD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -14A Drain-source voltage: -30V Pulsed drain current: -56A Gate charge: 150nC On-state resistance: 7mΩ Power dissipation: 2W Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 |
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В кошику од. на суму грн. | ||||||||||
| RTR030N05FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Drain-source voltage: 45V Pulsed drain current: 12A Drain current: 3A Gate charge: 6.2nC On-state resistance: 95mΩ Power dissipation: 1W Gate-source voltage: ±12V Polarisation: unipolar Case: TSMT3 Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||
| RD3P130SPFRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Drain-source voltage: -100V Pulsed drain current: -52A Drain current: -13A Gate charge: 40nC On-state resistance: 0.23Ω Power dissipation: 20W Gate-source voltage: ±20V Polarisation: unipolar Case: DPAK; TO252 Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||
|
|
BZX84C5V6LYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||
| RRR040P03FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Pulsed drain current: -16A Power dissipation: 1W Case: SOT346 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
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В кошику од. на суму грн. | |||||||||||
|
|
BZX84C18VLYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 18V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±6% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
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В кошику од. на суму грн. | ||||||||||
|
|
DTC115ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.2W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 82 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Frequency: 250MHz Case: SOT23 Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||
| DTC115EMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 100kΩ Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.15W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 82 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Frequency: 250MHz Case: SOT723 Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| BU4817F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1 Supply voltage: 700mV DC...7V DC Manufacturer series: BU48 Operating temperature: -40...125°C Mounting: SMD Active logical level: low Kind of RESET output: open drain Type of integrated circuit: supervisor circuit Kind of package: reel; tape Case: SOP4 Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 1.7V Integrated circuit features: ±1% accuracy |
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В кошику од. на суму грн. | |||||||||||
| QS8J4TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8 Kind of package: reel; tape Mounting: SMD Version: ESD Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -16A Drain current: -4A Gate charge: 8.4nC On-state resistance: 84mΩ Kind of channel: enhancement Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V Type of transistor: P-MOSFET x2 |
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В кошику од. на суму грн. | |||||||||||
| QS8K11TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8 Kind of package: reel; tape Mounting: SMD Version: ESD Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 12A Drain current: 3.5A Gate charge: 3.3nC On-state resistance: 75mΩ Kind of channel: enhancement Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V Type of transistor: N-MOSFET x2 |
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В кошику од. на суму грн. | |||||||||||
| SLR343BN4T3F | ROHM SEMICONDUCTOR |
Category: THT LEDs Round Description: LED; blue; 680mcd; 40°; Front: convex Type of diode: LED LED colour: blue Luminosity: 680mcd Viewing angle: 40° Wavelength: 470nm LED lens: transparent LED current: 20mA Mounting: THT Front: convex |
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В кошику од. на суму грн. | |||||||||||
|
|
RSS090N03FRATB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 36A |
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В кошику од. на суму грн. | ||||||||||
| RBR5LAM30ATFTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 5A; reel,tape Type of diode: Schottky rectifying Case: SOD128 Mounting: SMD Max. off-state voltage: 30V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.53V Leakage current: 0.1mA Max. forward impulse current: 75A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
| RBR10BM40AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 40V; 5Ax2 Type of diode: Schottky rectifying Case: DPAK; SC63; TO252 Mounting: SMD Max. off-state voltage: 40V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.62V Leakage current: 120µA Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BD45241G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Manufacturer series: BD45 Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Integrated circuit features: Counter Timer Built-in Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.4V Case: SSOP5 Type of integrated circuit: supervisor circuit |
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В кошику од. на суму грн. | |||||||||||
| BD45255G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Manufacturer series: BD45 Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Integrated circuit features: Counter Timer Built-in Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.5V Case: SSOP5 Type of integrated circuit: supervisor circuit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| BD45262G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Manufacturer series: BD45 Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Integrated circuit features: Counter Timer Built-in Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.6V Case: SSOP5 Type of integrated circuit: supervisor circuit |
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В кошику од. на суму грн. | |||||||||||
| BD45265G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Manufacturer series: BD45 Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Integrated circuit features: Counter Timer Built-in Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 2.6V Case: SSOP5 Type of integrated circuit: supervisor circuit |
товару немає в наявності |
В кошику од. на суму грн. |
| DTC143XCAHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Current gain: 30
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В кошику
од. на суму грн.
| SCS220AE2GC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 91A
Max. forward impulse current: 0.3kA
Leakage current: 0.2mA
Power dissipation: 160W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 160W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 91A
Max. forward impulse current: 0.3kA
Leakage current: 0.2mA
Power dissipation: 160W
Kind of package: tube
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В кошику
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| QS5U12TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 2A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 0.9W
Pulsed drain current: 8A
Case: TSOT25
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET + Schottky
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 2A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 0.9W
Pulsed drain current: 8A
Case: TSOT25
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET + Schottky
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В кошику
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| QS5U17TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 2A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 1.25W
Pulsed drain current: 8A
Case: TSOT25
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET + Schottky
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 2A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 1.25W
Pulsed drain current: 8A
Case: TSOT25
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET + Schottky
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В кошику
од. на суму грн.
| QS5U16TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 0.5A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 1.25W
Pulsed drain current: 2A
Case: TSOT25
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET + Schottky
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 0.5A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 1.25W
Pulsed drain current: 2A
Case: TSOT25
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET + Schottky
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В кошику
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| QS5K2TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 2A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 1.25W
Pulsed drain current: 8A
Case: TSOT25
Semiconductor structure: common source
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Gate-source voltage: ±12V
Drain current: 2A
Gate charge: 2.8nC
On-state resistance: 154mΩ
Power dissipation: 1.25W
Pulsed drain current: 8A
Case: TSOT25
Semiconductor structure: common source
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET x2
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В кошику
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| BU4209F-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Manufacturer series: BU42
Case: SOP4
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Threshold on-voltage: 0.9V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Manufacturer series: BU42
Case: SOP4
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Threshold on-voltage: 0.9V
Integrated circuit features: ±1% accuracy
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В кошику
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| BU4209G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Manufacturer series: BU42
Case: SSOP5
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Threshold on-voltage: 0.9V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Manufacturer series: BU42
Case: SSOP5
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Threshold on-voltage: 0.9V
Integrated circuit features: ±1% accuracy
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В кошику
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| RGC80TSX8RGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 267W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 468nC
Kind of package: tube
Turn-on time: 0.12µs
Turn-off time: 725ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 267W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 468nC
Kind of package: tube
Turn-on time: 0.12µs
Turn-off time: 725ns
Features of semiconductor devices: integrated anti-parallel diode
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| BU4922F-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Supply voltage: 700mV DC...7V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.2V
Manufacturer series: BU49
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Supply voltage: 700mV DC...7V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Case: SOP4
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.2V
Manufacturer series: BU49
Integrated circuit features: ±1% accuracy
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В кошику
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| BU4922FVE-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Supply voltage: 700mV DC...7V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Case: VSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.2V
Manufacturer series: BU49
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Supply voltage: 700mV DC...7V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Case: VSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.2V
Manufacturer series: BU49
Integrated circuit features: ±1% accuracy
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| BU4922G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Supply voltage: 700mV DC...7V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.2V
Manufacturer series: BU49
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Supply voltage: 700mV DC...7V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of RESET output: CMOS
Mounting: SMD
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.2V
Manufacturer series: BU49
Integrated circuit features: ±1% accuracy
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| BD4845G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.5V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.5V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
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| RS1E301GNTB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 39.8nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 33W
Drain current: 80A
Pulsed drain current: 120A
Kind of channel: enhancement
Case: HSOP8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 120A; 33W; HSOP8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 39.8nC
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 33W
Drain current: 80A
Pulsed drain current: 120A
Kind of channel: enhancement
Case: HSOP8
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| SCT3030ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Mounting: THT
Drain-source voltage: 650V
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Mounting: THT
Drain-source voltage: 650V
Technology: SiC
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| SCT3030ALHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Mounting: THT
Drain-source voltage: 650V
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Mounting: THT
Drain-source voltage: 650V
Technology: SiC
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| SCT3030ARC14 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Kind of package: tube
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Mounting: THT
Drain-source voltage: 650V
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Kind of package: tube
Case: TO247-4
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Mounting: THT
Drain-source voltage: 650V
Technology: SiC
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| SCT3030AW7TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Kind of package: reel; tape
Case: TO263-7
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 267W
Mounting: SMD
Drain-source voltage: 650V
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 267W
Kind of package: reel; tape
Case: TO263-7
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 104nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 267W
Mounting: SMD
Drain-source voltage: 650V
Technology: SiC
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| SCT3030KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 131nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 72A
Pulsed drain current: 180A
Power dissipation: 339W
Mounting: THT
Drain-source voltage: 1.2kV
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 131nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 72A
Pulsed drain current: 180A
Power dissipation: 339W
Mounting: THT
Drain-source voltage: 1.2kV
Technology: SiC
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| SCT3030KLHRC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 131nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 72A
Pulsed drain current: 180A
Power dissipation: 339W
Mounting: THT
Drain-source voltage: 1.2kV
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 72A; Idm: 180A; 339W
Kind of package: tube
Case: TO247
Polarisation: unipolar
Gate-source voltage: -4...22V
Gate charge: 131nC
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
Kind of channel: enhancement
Drain current: 72A
Pulsed drain current: 180A
Power dissipation: 339W
Mounting: THT
Drain-source voltage: 1.2kV
Technology: SiC
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| SMLA12ENTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 140mcd; 3VDC; 1.6x0.55x1.15mm; 130°; 5mA; λd: 527nm
LED version: angular
LED colour: green
Type of diode: LED
Mounting: SMD
Wavelength: 527nm
Dimensions: 1.6x0.55x1.15mm
LED current: 5mA
Luminosity: 140mcd
Operating voltage: 3V DC
Viewing angle: 130°
Category: SMD colour LEDs
Description: LED; green; SMD; 140mcd; 3VDC; 1.6x0.55x1.15mm; 130°; 5mA; λd: 527nm
LED version: angular
LED colour: green
Type of diode: LED
Mounting: SMD
Wavelength: 527nm
Dimensions: 1.6x0.55x1.15mm
LED current: 5mA
Luminosity: 140mcd
Operating voltage: 3V DC
Viewing angle: 130°
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| SMLA12WBN7W1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD white LEDs
Description: LED; white; SMD; 56mcd; 5mA; Front: flat; Variant: angular
LED version: angular
LED colour: white
Front: flat
Type of diode: LED
Mounting: SMD
Dimensions: 1.6x0.55x1.15mm
LED current: 5mA
Luminosity: 56mcd
Chromatic coordinates: x: 0.3; y: 0.3
Category: SMD white LEDs
Description: LED; white; SMD; 56mcd; 5mA; Front: flat; Variant: angular
LED version: angular
LED colour: white
Front: flat
Type of diode: LED
Mounting: SMD
Dimensions: 1.6x0.55x1.15mm
LED current: 5mA
Luminosity: 56mcd
Chromatic coordinates: x: 0.3; y: 0.3
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| DTC113ZKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Kind of package: reel; tape
Case: SC59; SOT346
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346; R1: 1kΩ
Kind of package: reel; tape
Case: SC59; SOT346
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
на замовлення 1436 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.59 грн |
| 51+ | 8.38 грн |
| 100+ | 5.11 грн |
| 500+ | 3.71 грн |
| 1000+ | 3.26 грн |
| RRH050P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 2W
Case: SOP8
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Version: ESD
Pulsed drain current: -20A
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; Idm: -20A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 2W
Case: SOP8
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Version: ESD
Pulsed drain current: -20A
Gate-source voltage: ±20V
Kind of package: reel; tape
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| SH8K26GZ0TB |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; Idm: 12A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Power dissipation: 2W
Case: SOP8
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 12A
Gate-source voltage: ±12V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; Idm: 12A; 2W; SOP8; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 6A
Power dissipation: 2W
Case: SOP8
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 12A
Gate-source voltage: ±12V
Kind of package: reel; tape
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| BCX19T116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 40...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SOT23
Current gain: 40...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| CSL1101WBAW1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD white LEDs
Description: LED; white; SMD; Case (mm): 1608; 155mcd; 120°; 5mA; 2.5÷3.4VDC
Mounting: SMD
Front: flat
Type of diode: LED
LED colour: white
Dimensions: 1.6x0.8x1.24mm
LED current: 5mA
Luminosity: 155mcd
Chromatic coordinates: x: 0.282; y: 0.249
Operating voltage: 2.5...3.4V DC
Viewing angle: 120°
Case - mm: 1608
Category: SMD white LEDs
Description: LED; white; SMD; Case (mm): 1608; 155mcd; 120°; 5mA; 2.5÷3.4VDC
Mounting: SMD
Front: flat
Type of diode: LED
LED colour: white
Dimensions: 1.6x0.8x1.24mm
LED current: 5mA
Luminosity: 155mcd
Chromatic coordinates: x: 0.282; y: 0.249
Operating voltage: 2.5...3.4V DC
Viewing angle: 120°
Case - mm: 1608
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| CSL1102WBDW1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD white LEDs
Description: LED; white; SMD; Case (mm): 1608; 1000mcd; 120°; 20mA; 2.6÷3.8VDC
Mounting: SMD
Front: flat
Type of diode: LED
LED colour: white
Dimensions: 1.6x0.8x1.24mm
LED current: 20mA
Luminosity: 1cd
Chromatic coordinates: x: 0.284; y: 0.303
Operating voltage: 2.6...3.8V DC
Viewing angle: 120°
Case - mm: 1608
Category: SMD white LEDs
Description: LED; white; SMD; Case (mm): 1608; 1000mcd; 120°; 20mA; 2.6÷3.8VDC
Mounting: SMD
Front: flat
Type of diode: LED
LED colour: white
Dimensions: 1.6x0.8x1.24mm
LED current: 20mA
Luminosity: 1cd
Chromatic coordinates: x: 0.284; y: 0.303
Operating voltage: 2.6...3.8V DC
Viewing angle: 120°
Case - mm: 1608
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| CSL1103WBCW1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD white LEDs
Description: LED; white; SMD; Case (mm): 1608; 1500mcd; 120°; 20mA; 2.6÷3.8VDC
Mounting: SMD
Front: flat
Type of diode: LED
LED colour: white
Dimensions: 1.6x0.8x1.24mm
LED current: 20mA
Luminosity: 1500mcd
Chromatic coordinates: x: 0.303; y: 0.294
Operating voltage: 2.6...3.8V DC
Viewing angle: 120°
Case - mm: 1608
Category: SMD white LEDs
Description: LED; white; SMD; Case (mm): 1608; 1500mcd; 120°; 20mA; 2.6÷3.8VDC
Mounting: SMD
Front: flat
Type of diode: LED
LED colour: white
Dimensions: 1.6x0.8x1.24mm
LED current: 20mA
Luminosity: 1500mcd
Chromatic coordinates: x: 0.303; y: 0.294
Operating voltage: 2.6...3.8V DC
Viewing angle: 120°
Case - mm: 1608
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| BD46292G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Mounting: SMD
Manufacturer series: BD46
Kind of RESET output: CMOS
Integrated circuit features: Counter Timer Built-in
Case: SSOP5
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.9V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Mounting: SMD
Manufacturer series: BD46
Kind of RESET output: CMOS
Integrated circuit features: Counter Timer Built-in
Case: SSOP5
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.9V
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| RD3G500GNTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
On-state resistance: 6.3mΩ
Case: DPAK; TO252
Gate-source voltage: ±20V
Power dissipation: 35W
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
On-state resistance: 6.3mΩ
Case: DPAK; TO252
Gate-source voltage: ±20V
Power dissipation: 35W
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
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| SCS320AHGC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 400uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.71V
Max. load current: 81A
Max. forward impulse current: 0.45kA
Leakage current: 0.4mA
Power dissipation: 115W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 400uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.71V
Max. load current: 81A
Max. forward impulse current: 0.45kA
Leakage current: 0.4mA
Power dissipation: 115W
Kind of package: tube
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| SCS320AMC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 41W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.71V
Max. load current: 46A
Max. forward impulse current: 0.45kA
Leakage current: 0.4mA
Power dissipation: 41W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220FP-2; 41W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.71V
Max. load current: 46A
Max. forward impulse current: 0.45kA
Leakage current: 0.4mA
Power dissipation: 41W
Kind of package: tube
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| RD3S100CNTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 10A; Idm: 40A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 190V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 52nC
Kind of package: reel; tape
Kind of channel: enhancement
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| UDZLVTE-17110 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 110V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 110V
Mounting: SMD
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 110V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 110V
Mounting: SMD
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
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| TLR342F-GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.3MHz; Ch: 2; 1.8÷5.5VDC; SOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 2.3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOP8
Operating temperature: -40...85°C
Slew rate: 1.2V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 1pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.3MHz; Ch: 2; 1.8÷5.5VDC; SOP8; 4mV
Type of integrated circuit: operational amplifier
Bandwidth: 2.3MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: 1.8...5.5V DC
Case: SOP8
Operating temperature: -40...85°C
Slew rate: 1.2V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4mV
Kind of package: reel; tape
Input bias current: 1pA
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| LMR342FVJ-GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 4; 2.7÷5.5VDC; 4.5mV; Iio: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4.5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 1pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2MHz; Ch: 4; 2.7÷5.5VDC; 4.5mV; Iio: 1pA
Type of integrated circuit: operational amplifier
Bandwidth: 2MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Input offset voltage: 4.5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 1pA
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| R8001CND3FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 4A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 8.7Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 4A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 8.7Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RB225T-60HZC9 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; ITO220AB,TO220FN
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Leakage current: 0.6mA
Max. forward voltage: 0.63V
Load current: 15A x2
Max. off-state voltage: 60V
Max. forward impulse current: 100A
Semiconductor structure: common cathode; double
Case: ITO220AB; TO220FN
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; ITO220AB,TO220FN
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Leakage current: 0.6mA
Max. forward voltage: 0.63V
Load current: 15A x2
Max. off-state voltage: 60V
Max. forward impulse current: 100A
Semiconductor structure: common cathode; double
Case: ITO220AB; TO220FN
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| DTC123YCAT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Current gain: 33
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| RRH140P03GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -14A
Drain-source voltage: -30V
Pulsed drain current: -56A
Gate charge: 150nC
On-state resistance: 7mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -14A
Drain-source voltage: -30V
Pulsed drain current: -56A
Gate charge: 150nC
On-state resistance: 7mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
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| RRH140P03TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -14A
Drain-source voltage: -30V
Pulsed drain current: -56A
Gate charge: 150nC
On-state resistance: 7mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -56A; 2W; SOP8; ESD
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -14A
Drain-source voltage: -30V
Pulsed drain current: -56A
Gate charge: 150nC
On-state resistance: 7mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
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| RTR030N05FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 45V
Pulsed drain current: 12A
Drain current: 3A
Gate charge: 6.2nC
On-state resistance: 95mΩ
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Case: TSMT3
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 45V
Pulsed drain current: 12A
Drain current: 3A
Gate charge: 6.2nC
On-state resistance: 95mΩ
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Case: TSMT3
Kind of channel: enhancement
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| RD3P130SPFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: -100V
Pulsed drain current: -52A
Drain current: -13A
Gate charge: 40nC
On-state resistance: 0.23Ω
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: DPAK; TO252
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: -100V
Pulsed drain current: -52A
Drain current: -13A
Gate charge: 40nC
On-state resistance: 0.23Ω
Power dissipation: 20W
Gate-source voltage: ±20V
Polarisation: unipolar
Case: DPAK; TO252
Kind of channel: enhancement
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| BZX84C5V6LYFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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| RRR040P03FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SOT346
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; Idm: -16A; 1W; SOT346
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1W
Case: SOT346
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
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| BZX84C18VLYT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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| DTC115ECAHZGT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 82
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Case: SOT23
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 100kΩ
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.2W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 82
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Case: SOT23
Kind of package: reel; tape
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| DTC115EMT2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 100kΩ
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.15W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 82
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Case: SOT723
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 100kΩ
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.15W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 82
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Frequency: 250MHz
Case: SOT723
Kind of package: reel; tape
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| BU4817F-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of package: reel; tape
Case: SOP4
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.7V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of package: reel; tape
Case: SOP4
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.7V
Integrated circuit features: ±1% accuracy
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| QS8J4TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Kind of package: reel; tape
Mounting: SMD
Version: ESD
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16A
Drain current: -4A
Gate charge: 8.4nC
On-state resistance: 84mΩ
Kind of channel: enhancement
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Kind of package: reel; tape
Mounting: SMD
Version: ESD
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16A
Drain current: -4A
Gate charge: 8.4nC
On-state resistance: 84mΩ
Kind of channel: enhancement
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
Type of transistor: P-MOSFET x2
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| QS8K11TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Kind of package: reel; tape
Mounting: SMD
Version: ESD
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 12A
Drain current: 3.5A
Gate charge: 3.3nC
On-state resistance: 75mΩ
Kind of channel: enhancement
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Kind of package: reel; tape
Mounting: SMD
Version: ESD
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 12A
Drain current: 3.5A
Gate charge: 3.3nC
On-state resistance: 75mΩ
Kind of channel: enhancement
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
Type of transistor: N-MOSFET x2
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| SLR343BN4T3F |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT LEDs Round
Description: LED; blue; 680mcd; 40°; Front: convex
Type of diode: LED
LED colour: blue
Luminosity: 680mcd
Viewing angle: 40°
Wavelength: 470nm
LED lens: transparent
LED current: 20mA
Mounting: THT
Front: convex
Category: THT LEDs Round
Description: LED; blue; 680mcd; 40°; Front: convex
Type of diode: LED
LED colour: blue
Luminosity: 680mcd
Viewing angle: 40°
Wavelength: 470nm
LED lens: transparent
LED current: 20mA
Mounting: THT
Front: convex
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| RSS090N03FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
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| RBR5LAM30ATFTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.1mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD128; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SOD128
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 0.1mA
Max. forward impulse current: 75A
Kind of package: reel; tape
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| RBR10BM40AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 40V; 5Ax2
Type of diode: Schottky rectifying
Case: DPAK; SC63; TO252
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Leakage current: 120µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 40V; 5Ax2
Type of diode: Schottky rectifying
Case: DPAK; SC63; TO252
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.62V
Leakage current: 120µA
Max. forward impulse current: 50A
Kind of package: reel; tape
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| BD45241G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Integrated circuit features: Counter Timer Built-in
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.4V
Case: SSOP5
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Integrated circuit features: Counter Timer Built-in
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.4V
Case: SSOP5
Type of integrated circuit: supervisor circuit
товару немає в наявності
В кошику
од. на суму грн.
| BD45255G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Integrated circuit features: Counter Timer Built-in
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.5V
Case: SSOP5
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Integrated circuit features: Counter Timer Built-in
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.5V
Case: SSOP5
Type of integrated circuit: supervisor circuit
товару немає в наявності
В кошику
од. на суму грн.
| BD45262G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Integrated circuit features: Counter Timer Built-in
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.6V
Case: SSOP5
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Integrated circuit features: Counter Timer Built-in
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.6V
Case: SSOP5
Type of integrated circuit: supervisor circuit
товару немає в наявності
В кошику
од. на суму грн.
| BD45265G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Integrated circuit features: Counter Timer Built-in
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.6V
Case: SSOP5
Type of integrated circuit: supervisor circuit
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Integrated circuit features: Counter Timer Built-in
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 2.6V
Case: SSOP5
Type of integrated circuit: supervisor circuit
товару немає в наявності
В кошику
од. на суму грн.